{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9850574","patent":{"patent_number":"US-9850574","title":"Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties","assignee":null,"inventors":[],"filing_date":"2015-02-16T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties","description":"A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9850574","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9850574","citation_suggestion":"Patentable. \"Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties\" (US-9850574). https://patentable.app/patents/US-9850574","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9850574","json":"https://patentable.app/api/llm-context/US-9850574","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:43.470Z"}