{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9851914","patent":{"patent_number":"US-9851914","title":"Random number generation in ferroelectric random access memory (FRAM)","assignee":null,"inventors":[],"filing_date":"2017-03-23T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G06F","G11C","G11C","G11C"],"num_claims":22,"abstract":"Disclosed embodiments relate to generating random numbers using two transistor, two capacitor (2T-2C) ferroelectric memory cells. In accordance with one disclosed embodiment, an n-bit random number can be generated by writing to a uniform data pattern to a set of n 2T-2C ferroelectric memory cells in a 1T-1C mode so that all ferroelectric capacitors of the n 2T-2C cells have a polarization state corresponding to the same data value (e.g., all 0's or all l's). The n 2T-2C cells are then read in a 2T-2C mode, so that a random bit (a 0 or 1) is produced for each cell, resulting in an n-bit random number. The n-bit random number is stored in the n 2T-2C ferroelectric memory cells by a rewrite operation. Such random numbers are useful for many purposes, including security, such as authentication, integrity checking, and encryption, and for identification."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Random number generation in ferroelectric random access memory (FRAM)","description":"Disclosed embodiments relate to generating random numbers using two transistor, two capacitor (2T-2C) ferroelectric memory cells. In accordance with one disclosed embodiment, an n-bit random number ca","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9851914","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9851914","citation_suggestion":"Patentable. \"Random number generation in ferroelectric random access memory (FRAM)\" (US-9851914). https://patentable.app/patents/US-9851914","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9851914","json":"https://patentable.app/api/llm-context/US-9851914","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:29:48.555Z"}