{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852778","patent":{"patent_number":"US-9852778","title":"Semiconductor device, memory device, and electronic device","assignee":null,"inventors":[],"filing_date":"2017-02-09T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"To provide a small, highly reliable memory device with a large storage capacity. A semiconductor device includes a circuit for retaining data and a circuit for reading data. The circuit for retaining data includes a transistor and a capacitor. The circuit for reading data is configured to supply a potential to the circuit for retaining data and read a potential from the circuit for retaining data. The circuit for retaining data and the circuit for reading data are provided in different layers, so that the semiconductor device with a large storage capacity is manufactured."},"analysis":{"summary":"The patent for **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) addresses the critical need for smaller, more reliable memory devices with significantly increased storage capacity. At its core, this innovation introduces a novel semiconductor architecture that departs from traditional planar designs.\n\nThe primary problem this patent solves is the inherent trade-off in conventional memory fabrication between physical size, data density, and operational reliability. As electronic devices become increasingly miniaturized, integrating high-capacity memory without compromising performance or footprint has become a major challenge for the industry.\n\nThe key technical approach involves structuring the semiconductor device with two distinct and physically separated circuits: a data retention circuit and a data reading circuit. The data retention circuit, comprising a transistor and a capacitor, is responsible for storing information. The data reading circuit is specifically configured to supply potential to the retention circuit for writing data and subsequently read potential from it for data retrieval. The groundbreaking aspect is that these two circuits are provided in *different layers*. This vertical integration allows for a much higher density of memory cells within a given footprint, effectively expanding storage capacity without increasing the chip's planar dimensions.\n\nThe business value and applications of this technology are substantial. It enables manufacturers to produce electronic devices that are more compact, yet offer superior data storage capabilities. This translates to enhanced performance, greater functionality, and potentially lower power consumption for a wide array of products, from consumer electronics like smartphones and wearables to industrial IoT devices, automotive systems, and advanced computing infrastructure. The improved reliability inherent in this layered design further strengthens its appeal for mission-critical applications.\n\nThe market opportunity for this technology is immense, spanning the entire electronics industry where memory is a fundamental component. As data generation and processing demands continue to grow exponentially, solutions that offer high-density, reliable memory in small packages will command a significant competitive advantage. This patent positions its implementers to lead in the development of next-generation devices that can truly keep pace with the demands of AI, edge computing, and ubiquitous connectivity.","layman_explanation":"In today's fast-paced digital world, virtually every electronic device, from our smartphones to complex industrial systems, relies heavily on memory. As we demand more from our technology – faster performance, more features, and smaller sizes – the underlying memory components face immense pressure. This patent, titled **Semiconductor Device, Memory Device, and Electronic Device**, offers a sophisticated yet understandable solution to some of the most persistent challenges in memory technology.\n\n**1. What Problem Does This Solve?**\nAt its core, this innovation tackles the dilemma of how to create memory that is simultaneously small, highly reliable, and boasts a large storage capacity. Historically, achieving all three has been a significant hurdle. Think about trying to pack more books into a small shelf: you either need a bigger shelf (larger device), or you have to squeeze the books so tightly they get damaged (reduced reliability), or you simply accept fewer books (less capacity). In the world of electronics, this translates to designers having to compromise on device size, data storage, or the longevity and integrity of the data itself. This bottleneck limits the potential for truly advanced, compact, and powerful electronic systems.\n\n**2. How Does It Work?**\nInstead of trying to squeeze everything onto a single flat surface, which is how most traditional memory is designed, this patent proposes a clever, multi-story approach. Imagine a memory chip as a miniature building. In this innovative design, one floor of the building is dedicated solely to *retaining* data. This 'retention circuit' uses tiny components (a transistor and a capacitor) to hold onto bits of information, much like a tiny battery holds a charge. The truly ingenious part is that a *separate floor* of the building is dedicated to *reading* and *writing* that data. This 'reading circuit' can send electrical signals down to the retention floor to store new information and can also detect the charges on the retention floor to retrieve existing information.\n\nThe magic happens because these two functions – storing and reading/writing – are physically separated into different layers. This vertical stacking allows for a far greater density of memory cells within the same footprint. It’s like being able to build a skyscraper of memory instead of just a sprawling single-story complex. This separation also helps reduce interference between the storage and access mechanisms, making the memory more reliable.\n\n**3. Why Does This Matter?**\nThis innovation matters immensely because it directly addresses the escalating demands of modern technology. For consumers, it means devices that are thinner, lighter, and can store exponentially more photos, videos, and applications without performance degradation. Imagine a smartphone with terabytes of storage that fits comfortably in your pocket. For businesses and industries, this technology unlocks potential in areas like edge computing, where vast amounts of data need to be processed locally and quickly, or in IoT devices that require robust, high-capacity memory in very small packages. The improved reliability also translates to reduced maintenance costs and enhanced data integrity, critical for applications ranging from autonomous vehicles to medical devices. This approach offers a significant competitive advantage for manufacturers who can leverage it, enabling them to build next-generation products that push the boundaries of what's currently possible.\n\n**4. What's Next?**\nThe principles outlined in this patent lay a foundational roadmap for the future of memory. We can expect to see this layered architecture influencing the design of various memory types, leading to new product categories and significant enhancements in existing ones. As fabrication techniques for vertical integration continue to advance, the adoption timeline for this technology will likely accelerate. For investors, this represents an opportunity to back companies that are strategically positioned to capitalize on the inevitable demand for superior memory solutions, driving innovation and market leadership in the electronics sector.","technical_analysis":"The patent **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) describes a significant architectural advancement aimed at resolving the perennial challenge of achieving high-density, reliable memory within a compact footprint. This technical analysis will dissect the proposed architecture, its underlying principles, and its potential implications for semiconductor engineering.\n\n**Technical Architecture and Core Innovation**\nThe invention centers on a semiconductor device comprising two primary functional blocks: a data retention circuit and a data reading circuit. The data retention circuit is described as including a transistor and a capacitor, which is characteristic of a dynamic random-access memory (DRAM) cell. This fundamental memory cell stores data as an electrical charge in the capacitor, controlled by the transistor. The critical innovation lies in the spatial arrangement of these functional blocks.\n\nUnlike conventional planar (2D) memory architectures where memory cells and peripheral circuitry reside on the same silicon plane, this patent specifies that the data retention circuit and the data reading circuit are **provided in different layers**. This constitutes a form of 3D integration, moving beyond simple vertical stacking of memory arrays (like 3D NAND) to a more integrated functional layering within a single memory unit. The data reading circuit is explicitly configured to perform two crucial tasks: first, to supply a potential to the data retention circuit (corresponding to a write operation, charging/discharging the capacitor), and second, to read a potential from the data retention circuit (corresponding to a read operation, sensing the charge state of the capacitor).\n\n**Implementation Details and Algorithm Specifics**\nFrom an implementation perspective, the layered structure implies advanced semiconductor fabrication techniques such as wafer bonding or through-silicon vias (TSVs) for inter-layer connectivity. The precise alignment and electrical connection between the retention layer (containing the transistor-capacitor arrays) and the reading layer (containing sense amplifiers, word line drivers, and bit line drivers) are paramount. The 'supplying a potential' operation involves applying voltage pulses via word lines and bit lines to access and modify the charge in specific capacitors. The 'reading a potential' operation involves sensing the minute voltage changes on a bit line when a transistor is activated, allowing the stored charge to be detected by a sense amplifier.\n\nThe algorithm for data access in this architecture would largely follow standard DRAM protocols but adapted for the layered interconnects. A memory controller would issue addresses, which are then decoded to select specific word lines and bit lines. The reading circuit would then activate the appropriate access transistors and sense the charge on the bit lines. The key difference is the physical routing and interaction occurring vertically between layers, potentially optimizing signal paths and reducing latency compared to complex 2D routing in high-density arrays.\n\n**Performance Characteristics and Integration Patterns**\nThis layered approach has several performance implications:\n\n*   **Increased Density:** The most direct benefit is a substantial increase in memory density. By stacking, more memory cells can be packed per unit of planar area, leading to higher capacity chips. This is critical for mobile devices, IoT, and data centers where physical space is at a premium.\n*   **Improved Reliability:** Physical separation of retention and reading circuits can reduce parasitic effects like crosstalk and noise, which are exacerbated in tightly packed planar designs. This can lead to improved signal integrity, lower error rates, and enhanced overall memory reliability.\n*   **Potential for Speed Enhancement:** Optimized layering could allow for shorter interconnection paths for critical signals, potentially reducing signal propagation delays and improving access times. Furthermore, the reading circuit can be optimized independently for speed, while the retention layer is optimized for charge retention.\n*   **Power Efficiency:** While 3D integration can sometimes introduce power challenges, optimized inter-layer communication and reduced signal travel distances could lead to more power-efficient read/write operations compared to highly complex 2D routing.\n\n**Code-Level Implications**\nFor software and firmware developers, the direct code-level implications might be minimal, as the memory controller typically abstracts the physical layer. However, at the driver and firmware level, understanding this architecture could allow for more optimized memory access patterns, prefetching strategies, and error correction code (ECC) implementations that leverage the enhanced reliability or specific performance characteristics of this layered memory. For example, if certain layers exhibit different thermal or electrical properties, firmware could dynamically adjust refresh rates or access patterns to optimize performance and longevity.\n\nIn essence, this technology represents a sophisticated leap in memory design, addressing fundamental limitations through intelligent 3D architectural innovation. It sets a new benchmark for high-capacity, reliable, and compact memory solutions, driving the next generation of electronic device capabilities.","business_analysis":"The patent **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) presents a compelling business proposition by addressing a fundamental and growing need in the electronics industry: the demand for higher-capacity, more reliable memory within increasingly constrained physical footprints. This innovation holds significant potential to disrupt existing markets and create new opportunities.\n\n**Market Opportunity Size and Growth**\nThe global semiconductor memory market is a multi-billion dollar industry, projected to grow substantially in the coming years, driven by trends like AI, IoT, 5G, cloud computing, and advanced automotive systems. Each of these sectors requires vast amounts of data storage and high-speed access. Traditional memory solutions, primarily DRAM and NAND, face physical scaling limits that make it increasingly difficult to meet these escalating demands. This patent, by offering a path to significantly higher density and improved reliability, taps directly into this massive and expanding market, positioning itself as a key enabler for future technological advancements. The ability to pack more memory into smaller spaces is a universal requirement across all electronic device categories, from consumer to enterprise.\n\n**Competitive Advantages**\nThis technology offers several critical competitive advantages:\n\n1.  **Superior Density:** The layered architecture allows for a greater number of memory cells per unit area, directly translating to higher storage capacities in a compact form factor. This provides a distinct advantage over competitors still relying on predominantly planar designs.\n2.  **Enhanced Reliability:** By physically separating data retention and reading circuits into different layers, the invention can mitigate crosstalk and interference, leading to more robust and dependable memory operation. This is a crucial differentiator in applications where data integrity is paramount (e.g., medical, automotive, industrial control).\n3.  **Miniaturization Potential:** The ability to achieve high capacity in a small physical package is invaluable for ultra-compact devices like wearables, smart sensors, and advanced mobile phones, opening up new product design possibilities.\n4.  **Cost Efficiency (Long-term):** While initial fabrication might involve new processes, the increased density per chip could lead to lower cost-per-bit in the long run, making the technology highly competitive at scale.\n\n**Revenue Potential and Business Models**\nCompanies adopting this technology could generate revenue through various models:\n\n*   **Licensing:** Patent holders could license the technology to major semiconductor manufacturers (e.g., Samsung, Micron, SK Hynix) for integration into their product lines, generating substantial royalty income.\n*   **Direct Manufacturing:** A company with the necessary fabrication capabilities could directly manufacture and sell memory chips based on this architecture, targeting high-value segments that prioritize density and reliability.\n*   **Module Integration:** Development of memory modules (e.g., DIMMs, LPDDR) that leverage this technology, offering them to OEMs for integration into end products.\n*   **Specialized Solutions:** Creating custom memory solutions for niche markets (e.g., space-constrained industrial IoT, high-performance computing) where the unique benefits of this layered design are most critical.\n\n**Strategic Positioning**\nThis patent strategically positions its implementers at the forefront of 3D memory technology. It moves beyond simple stacking of identical memory planes (like 3D NAND) to functional stacking of different circuit types (retention and reading). This allows for optimization of each layer independently, offering a more sophisticated approach to vertical integration. Companies leveraging this innovation can brand themselves as leaders in advanced memory solutions, attracting top talent and strategic partnerships.\n\n**ROI Projections**\nInvesting in or implementing this technology could yield significant returns. Given the insatiable demand for memory and the clear competitive advantages in density, reliability, and form factor, early adopters could capture substantial market share. Reduced error rates and longer device lifespans (due to improved reliability) can also lead to lower warranty costs and higher customer satisfaction, further boosting ROI. As the technology matures and scales, the cost-per-bit advantages derived from higher integration density will further enhance profitability, making this a highly attractive investment opportunity for the future of electronics.","faqs":[{"answer":"The patent **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) introduces a novel architecture for semiconductor memory. At its core, it describes a memory device designed to be small, highly reliable, and possess a large storage capacity.\n\nThis innovation achieves its goals by structuring the memory device with two distinct circuits: one for retaining data (which typically includes a transistor and a capacitor) and another for reading that data. The groundbreaking aspect is that these two circuits are physically separated and provided in different layers within the semiconductor device.\n\nThis layered approach allows for a more efficient use of space, enabling a significantly higher density of memory cells within a compact footprint. It's a strategic shift from traditional planar memory designs towards a more sophisticated three-dimensional integration for functional components, addressing the limitations of conventional memory scaling.","question":"What is Semiconductor Device, Memory Device, and Electronic Device?"},{"answer":"The **Semiconductor Device, Memory Device, and Electronic Device** operates on a principle of functional layering. It ingeniously separates the memory's core operations into two dedicated, vertically stacked circuits.\n\nFirst, there's the 'data retention circuit,' which is responsible for actually storing the information. This circuit typically consists of a transistor and a capacitor, where data is held as an electrical charge within the capacitor, controlled by the transistor. This layer is optimized for stable and long-term data storage.\n\nSecond, there's the 'data reading circuit.' This circuit is positioned in a different layer and is configured to interact with the retention circuit. During a write operation, it supplies a specific electrical potential to the retention circuit to charge or discharge the capacitor, thereby storing data. During a read operation, it senses the potential (charge) from the retention circuit to retrieve the stored data. By placing these two circuits in separate layers, the invention maximizes storage density and minimizes interference between the storage and access mechanisms, leading to improved performance and reliability.","question":"How does Semiconductor Device, Memory Device, and Electronic Device work?"},{"answer":"The **Semiconductor Device, Memory Device, and Electronic Device** patent directly addresses a critical and persistent problem in the electronics industry: the challenge of simultaneously achieving small physical size, high data storage capacity, and high reliability in memory devices.\n\nTraditional memory architectures, which largely rely on arranging components on a single flat plane, encounter significant limitations as devices miniaturize. Shrinking memory cells too much can lead to increased electrical leakage, higher susceptibility to noise (crosstalk), and reduced overall reliability. Conversely, increasing capacity often means larger chip sizes. This forces designers to make difficult trade-offs.\n\nThis innovation solves this by moving to a layered, 3D functional integration. By stacking the data retention and data reading circuits, it overcomes the planar area constraints, allowing for significantly more memory cells in the same footprint. This architectural shift mitigates the compromises, enabling the creation of memory devices that are truly compact, highly capacious, and inherently more reliable.","question":"What problem does Semiconductor Device, Memory Device, and Electronic Device solve?"},{"answer":"The patent for **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) does not list specific inventors in the provided data, nor does it specify an assignee. Often, patents are filed by corporations or research institutions, which then hold the rights to the invention. The inventors would be the individuals who conceived the innovative concepts described within the patent claims.\n\nIn the context of patent filings, the 'assignee' is the entity (usually a company) to whom the rights of the patent are legally transferred by the inventors. While the assignee and inventors are not detailed in the provided abstract, the innovation itself stems from expert research and development in semiconductor technology, likely from a leading firm or academic group focused on advanced memory solutions.","question":"Who invented Semiconductor Device, Memory Device, and Electronic Device?"},{"answer":"The **Semiconductor Device, Memory Device, and Electronic Device** patent delivers several crucial benefits that are highly sought after in the modern electronics landscape.\n\nFirstly, it enables a **large storage capacity** within a compact form factor. By utilizing a layered architecture, more memory cells can be packed into a smaller physical space, directly addressing the demand for higher data density in devices. Secondly, it offers **enhanced reliability**. The physical separation of the data retention and data reading circuits into different layers minimizes electrical interference and crosstalk, leading to improved signal integrity and fewer data errors. This makes the memory more robust and dependable for critical applications.\n\nThirdly, the invention facilitates the creation of **smaller, more compact electronic devices**. This is vital for miniaturization trends in smartphones, wearables, IoT devices, and embedded systems, allowing for sleeker designs without sacrificing performance or storage. Finally, this approach can potentially lead to **improved power efficiency** due to optimized signal paths and specialized circuit designs in each layer, extending battery life in portable electronics. These benefits collectively position this technology as a significant advancement in memory design.","question":"What are the key benefits of Semiconductor Device, Memory Device, and Electronic Device?"},{"answer":"The **Semiconductor Device, Memory Device, and Electronic Device** distinguishes itself from prior art by its innovative approach to 3D functional integration, particularly for volatile memory.\n\nMost prior art memory designs, especially DRAM, rely on planar (2D) architectures where memory cells and their associated read/write logic are co-located on a single silicon plane. While highly optimized, this approach faces severe scaling limitations as components shrink, leading to compromises in density, reliability, and power consumption. Even 3D NAND flash, while volumetric, typically stacks identical memory cell arrays, not functionally distinct circuits.\n\nThis patent's key difference lies in providing the **data retention circuit and the data reading circuit in *different physical layers***. This functional separation allows for independent optimization of each layer—one for stable storage, the other for efficient access—and fundamentally breaks the planar area constraint. This results in superior volumetric density, reduced crosstalk due to physical isolation, and potentially faster, more reliable operations compared to traditional designs. It represents a more sophisticated form of 3D integration that targets the core functional architecture of memory.","question":"How is Semiconductor Device, Memory Device, and Electronic Device different from prior art?"},{"answer":"The **Semiconductor Device, Memory Device, and Electronic Device** patent is poised to have a profound impact across a wide array of industries that rely heavily on advanced memory solutions.\n\n**Consumer Electronics** will see benefits in smartphones, tablets, laptops, and wearables, enabling thinner, lighter devices with significantly increased storage capacity and improved performance. **Internet of Things (IoT)** and **Edge Computing** will leverage the compact size and high reliability for smarter sensors and devices capable of more complex local data processing and AI inference. **Automotive** applications, particularly autonomous vehicles and advanced driver-assistance systems (ADAS), will benefit from the robust, high-capacity memory needed for real-time data processing and safety-critical functions.\n\nFurthermore, **Data Centers** and **Cloud Computing** can utilize this technology to pack more memory into existing server racks, leading to greater efficiency and reduced physical footprint. The **Medical Device** industry can incorporate more reliable and capacious memory into diagnostic equipment and implantable devices. In essence, any sector requiring high-density, reliable, and compact data storage will be transformed by this innovative approach to semiconductor memory.","question":"What industries will Semiconductor Device, Memory Device, and Electronic Device impact?"},{"answer":"The patent for **Semiconductor Device, Memory Device, and Electronic Device** (US-9852778) has a filing date of **2017-02-09**.\n\nIt was subsequently published and granted on **2017-12-26**. The publication date typically signifies when the patent document becomes publicly accessible, detailing the invention's claims and specifications. The granting date confirms that the United States Patent and Trademark Office (USPTO) has recognized the novelty, non-obviousness, and utility of the invention, thereby conferring exclusive rights to the patent holder for a specified period. This timeline indicates a relatively swift examination and granting process, often reflective of the patent's clear innovation and relevance to current technological needs.","question":"When was Semiconductor Device, Memory Device, and Electronic Device filed/granted?"},{"answer":"The commercial applications of the **Semiconductor Device, Memory Device, and Electronic Device** are extensive, spanning nearly every segment of the electronics market due to its ability to deliver superior memory performance.\n\nIn **Mobile Computing**, this technology can enable next-generation smartphones, tablets, and laptops with unprecedented RAM and storage capacities, facilitating more powerful multitasking and on-device AI. For **Wearables**, it allows for more sophisticated health monitoring, data logging, and processing within extremely small form factors. **IoT devices** can become smarter and more autonomous, performing complex tasks at the edge without constant cloud connectivity due to increased local memory.\n\nIn **Automotive Electronics**, it supports the high-speed, high-reliability memory required for ADAS and autonomous driving systems, which process vast amounts of sensor data in real-time. **Enterprise Computing** benefits from denser memory modules for servers and data centers, leading to higher computational density and energy efficiency. Furthermore, specialized applications in **Aerospace, Defense, and Medical Devices** can leverage the enhanced reliability and compact size for critical systems where performance and dependability are paramount. This patent provides a foundational technology for a wide range of advanced electronic products.","question":"What are the commercial applications of Semiconductor Device, Memory Device, and Electronic Device?"},{"answer":"Future developments for the **Semiconductor Device, Memory Device, and Electronic Device** are expected to build upon its foundational layered architecture, pushing the boundaries of memory technology even further.\n\nOne key area is the **refinement of 3D integration techniques**, including more advanced Through-Silicon Vias (TSVs) and wafer bonding processes, to increase layer count and improve inter-layer communication efficiency. This will lead to even higher densities and potentially faster access speeds. We can also expect **heterogeneous integration**, where different types of memory (e.g., volatile DRAM and non-volatile MRAM or ReRAM) or even logic circuits are integrated within the same vertical stack, creating highly functional System-in-Package (SiP) solutions.\n\nFurthermore, research will likely focus on **advanced materials** for both the retention and reading layers, optimizing for lower power consumption, higher endurance, and better thermal management in dense 3D stacks. The architectural principles of this innovation could also inspire new paradigms like **in-memory computing**, where processing elements are directly integrated within memory layers, drastically reducing data transfer bottlenecks for AI and big data workloads. Ultimately, this technology is a stepping stone towards creating truly intelligent, ultra-compact, and energy-efficient electronic systems that can handle the exponentially growing demands of the digital age.","question":"What are the future developments expected for Semiconductor Device, Memory Device, and Electronic Device?"}],"topics":["semiconductor device","memory device","electronic device","high-capacity memory","layered memory","relentless","demand","increased"],"tech_cluster":null},"seo":{"title":"Semiconductor Device, Memory Device, and Electronic Device - Patent US-9852778","description":"Discover this groundbreaking layered memory architecture for high-capacity, reliable, and compact electronic devices. Full patent analysis of US-9852778.","keywords":["semiconductor device","memory device","electronic device","high-capacity memory","layered memory","3D integration","memory reliability","compact electronics","patent US-9852778","semiconductor innovation","data storage technology","memory architecture","vertical stacking","DRAM technology"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852778","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852778","citation_suggestion":"Patentable. \"Semiconductor device, memory device, and electronic device\" (US-9852778). https://patentable.app/patents/US-9852778","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852778","json":"https://patentable.app/api/llm-context/US-9852778","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:49:19.801Z"}