{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852785","patent":{"patent_number":"US-9852785","title":"Memories with metal-ferroelectric-semiconductor (MFS) transistors","assignee":null,"inventors":[],"filing_date":"2016-05-27T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":19,"abstract":"A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed."},"analysis":{"summary":"The patent **Memories with Metal-ferroelectric-semiconductor (mfs) Transistors** (US-9852785) introduces a novel and efficient method for operating memory cells that incorporate Metal-Ferroelectric-Semiconductor (MFS) transistors. Its core innovation lies in a precise control scheme for read and write operations on these advanced transistors, which are designed to store data non-volatility.\n\nThe primary problem this invention addresses is the inherent trade-off in existing memory technologies between speed, power consumption, and data persistence. Traditional volatile memories (like DRAM) are fast but require constant power, while non-volatile memories (like Flash) retain data without power but are typically slower and have limited endurance. This patent seeks to bridge this gap by enabling memory that is both fast and non-volatile.\n\nThe key technical approach involves applying specific first and second voltages to the source lines of a memory, coupled with turning on an access transistor for a target memory cell. This precise voltage and transistor control allows for the reliable performance of either a write operation (to set the polarization state of the MFS transistor, representing a data bit) or a read operation (to sense the existing polarization state). This method ensures robust and efficient manipulation of the ferroelectric material within the MFS transistor, which is critical for stable data storage and retrieval.\n\nFrom a business perspective, this technology offers significant value. It has the potential to enable a new generation of memory devices that combine high performance with low power consumption and inherent non-volatility. This translates to products with instant-on capabilities, extended battery life, and enhanced data integrity. Potential applications span across various industries, including mobile computing, IoT devices, automotive electronics, and data centers, where the demand for efficient, persistent memory is rapidly growing.\n\nThe market opportunity for this innovation is substantial, as it addresses a fundamental need for 'universal memory' solutions. Companies that can leverage this MFS transistor technology could gain a significant competitive advantage by offering memory products that outperform current DRAM and Flash alternatives in critical metrics. This patent lays a foundational framework for developing next-generation memory architectures that are more efficient, reliable, and capable of supporting future computing paradigms.","layman_explanation":"For business professionals, understanding the core innovation behind **Memories with Metal-ferroelectric-semiconductor (mfs) Transistors** (US-9852785) is crucial, not for its deep technical specifics, but for its profound implications on product development, market strategy, and competitive advantage. This patent describes a foundational method for operating a new type of memory that could redefine device performance and energy efficiency.\n\n**1. What Problem Does This Solve?**\nToday's digital devices face a fundamental dilemma with memory. We have two main types: DRAM (Dynamic Random-Access Memory) is incredibly fast but volatile, meaning it forgets everything the moment power is cut – like a whiteboard that needs constant rewriting to keep data. Then there's Flash memory (used in SSDs and USB drives), which is non-volatile, remembering data without power, but it's significantly slower and has a limited lifespan for writes. This forces device manufacturers to compromise: either you get speed and power consumption, or persistence and slower performance. This trade-off impacts everything from your smartphone's battery life to the boot-up time of your laptop and the energy consumption of data centers. The market is desperately seeking a 'universal memory' that offers the best of both worlds.\n\n**2. How Does It Work?**\nThis patent introduces a method for harnessing Metal-Ferroelectric-Semiconductor (MFS) transistors. Think of an MFS transistor as a tiny, highly efficient switch that can not only turn on or off but also 'remember' its state even when the power is off. This 'memory' capability comes from a special material within the transistor that can hold a polarization, much like a tiny magnet can point North or South. To 'write' data (store a 0 or 1), the system applies specific electrical signals (voltages) that 'flip' this internal polarization. To 'read' data, it sends a gentle signal to sense which way the polarization is pointing, without disturbing it. The innovation here isn't just the MFS transistor itself, but the clever, precise sequence of electrical signals and controls (involving multiple 'source lines' and an 'access transistor') that ensure these read and write operations are reliable, fast, and energy-efficient. It's akin to having a highly skilled conductor orchestrating a complex symphony of electrical pulses to flawlessly store and retrieve data.\n\n**3. Why Does This Matter?**\nThis technology matters because it offers a pathway to fundamentally overcome the memory dilemma. If successfully commercialized, it could lead to:\n*   **Instant-On Devices:** Laptops, phones, and other electronics could boot up in milliseconds, eliminating waiting times.\n*   **Extended Battery Life:** By removing the need for constant power to retain data (like DRAM), devices could achieve significantly longer battery life.\n*   **Enhanced Performance:** Combining high-speed access with non-volatility would allow for faster processing of data, impacting everything from AI and machine learning to high-performance computing.\n*   **Simplified System Design:** Engineers could design simpler, more compact systems by consolidating memory types, reducing costs and complexity.\n*   **New Product Opportunities:** It could enable entirely new categories of always-on, ultra-low-power devices for IoT, wearables, and edge computing, where current memory limitations are a major barrier.\nThis patent provides a strong competitive advantage for any company that can integrate and scale this technology, potentially disrupting the multi-billion dollar memory market and driving significant ROI through superior product offerings.\n\n**4. What's Next?**\nLooking ahead, the commercialization of this MFS transistor technology will likely involve further material science refinements and robust manufacturing processes. We can expect to see initial adoption in high-value, niche markets that prioritize performance and low power, such as specialized embedded systems or automotive applications. As the technology matures, it could become a mainstream component in consumer electronics and data center infrastructure, potentially reshaping how we build and interact with digital devices within the next 5-10 years. Investment in companies pursuing this or similar universal memory solutions could yield substantial long-term returns.","technical_analysis":"The patent **Memories with Metal-ferroelectric-semiconductor (mfs) Transistors** (US-9852785) presents a sophisticated method for operating memory cells built around Metal-Ferroelectric-Semiconductor (MFS) transistors. This technical analysis delves into the architecture, implementation specifics, and performance implications of this innovative approach, targeting engineers and semiconductor architects.\n\n**Technical Architecture and Core Component:**\nAt the heart of this invention is the memory cell, which primarily comprises a Metal-Ferroelectric-Semiconductor (MFS) transistor and an associated access transistor. The MFS transistor is a field-effect transistor where the gate dielectric stack includes a ferroelectric material. This ferroelectric layer exhibits two stable polarization states (e.g., positive or negative remanent polarization) that can be switched by an applied electric field and persist without continuous power, thus providing non-volatile data storage. The access transistor, typically a standard MOSFET, acts as a switch, controlling access to the MFS transistor within the memory cell and isolating it from other cells in a larger array.\n\n**Implementation Details and Algorithm Specifics:**\nThe patented method describes a sequence of operations for both writing and reading data to/from an MFS memory cell:\n\n1.  **Voltage Application to Source Lines:** The method begins by applying a specific first voltage to a first source line and a second voltage to a second source line of the memory array. These source lines are integral to the memory cell's operation, providing the necessary bias and potential differences for manipulating the MFS transistor. The precise values and timing of these voltages are critical for generating the electric field required across the ferroelectric gate dielectric.\n2.  **Access Transistor Activation:** Concurrently or sequentially, an access transistor of the target memory cell is turned on. This step is crucial for selecting the specific cell to be operated upon and connecting it to the read/write circuitry, preventing unintended operations on neighboring cells (cross-talk).\n3.  **Performing Write/Read Operation on MFS Transistor:**\n    *   **Write Operation:** To write a logical '0' or '1', specific voltage pulses are applied to the gate and potentially the source/drain terminals of the MFS transistor, across the ferroelectric layer. These pulses induce a strong electric field, forcing the ferroelectric material to switch its polarization to the desired state. For instance, a positive voltage pulse might align dipoles in one direction, while a negative pulse aligns them in the opposite. The magnitude and duration of these pulses must be carefully calibrated to ensure complete and stable polarization switching without causing fatigue or breakdown of the ferroelectric film.\n    *   **Read Operation:** To read the stored data, a smaller, non-destructive voltage pulse is applied to the gate. The remanent polarization of the ferroelectric layer modulates the channel conductivity of the MFS transistor. By sensing the resulting drain current, the stored data can be inferred. For example, one polarization state might lead to a higher drain current (representing '1'), while the other leads to a lower current (representing '0'). Sense amplifiers are used to detect these subtle current differences.\n\n**Integration Patterns:**\nThis MFS transistor memory can be integrated into larger memory arrays, similar to conventional DRAM or Flash. The memory cells would be arranged in rows and columns, with word lines controlling the access transistors and bit lines connected to the MFS transistor's source/drain terminals for read/write operations. The specific first and second source lines mentioned in the patent suggest a more complex biasing scheme than a simple ground or Vdd connection, potentially to optimize fields for switching or sensing.\n\n**Performance Characteristics:**\nThis approach aims to deliver several performance benefits:\n*   **Non-Volatility:** Data retention without power due to ferroelectric polarization.\n*   **Improved Endurance:** Compared to Flash, ferroelectric materials can typically endure a higher number of read/write cycles, potentially extending device lifespan.\n*   **Faster Operations:** MFS transistor switching can be significantly faster than charge-trapping mechanisms in Flash, approaching DRAM-like speeds for write operations.\n*   **Lower Power Consumption:** Elimination of refresh cycles (DRAM) and reduced power during idle states due to non-volatility.\n*   **High Density:** The 1T-MFS cell structure is potentially more scalable than 1T1C FeRAM, allowing for higher integration density.\n\n**Code-Level Implications:**\nWhile this patent is at the device and circuit level, its implications for software and firmware are significant. Operating systems and applications could be designed to leverage instant-on capabilities and persistent memory regions. Memory management units (MMUs) and caching algorithms would need to be optimized to take full advantage of the non-volatile, high-speed characteristics of this MFS memory. Drivers and firmware would implement the voltage sequencing and access transistor control logic as described, ensuring reliable communication with the MFS memory array. This would involve precise timing and voltage control registers, potentially managed by a memory controller ASIC.","business_analysis":"The patent **Memories with Metal-ferroelectric-semiconductor (mfs) Transistors** (US-9852785) introduces a groundbreaking method for operating memory cells that utilize Metal-Ferroelectric-Semiconductor (MFS) transistors. This innovation carries significant business implications, poised to disrupt existing memory markets and create new opportunities across diverse industries.\n\n**Market Opportunity Size:**\nThe global memory market is a multi-billion dollar industry, with DRAM and NAND Flash dominating. However, the continuous demand for 'universal memory'—combining the speed of DRAM with the non-volatility of Flash—highlights a substantial unmet need. This patent directly addresses this gap. The market for non-volatile RAM (NVRAM) is projected to grow significantly, especially in segments like IoT, edge AI, automotive, and enterprise storage. If MFS transistor technology can deliver on its promise of high-speed, non-volatile, and energy-efficient memory, it could capture a significant share of this expanding market, potentially valued in the tens of billions of dollars annually, by displacing or complementing existing technologies.\n\n**Competitive Advantages:**\nThis invention offers several distinct competitive advantages:\n1.  **Performance Hybridization:** It provides a path to memory that is both fast enough for main memory tasks (like DRAM) and non-volatile enough for persistent storage (like Flash), reducing the need for complex memory hierarchies and data transfers.\n2.  **Energy Efficiency:** By eliminating the need for constant refreshing (DRAM) and offering lower power states due to non-volatility, it dramatically reduces power consumption, a critical factor for mobile, IoT, and data center applications.\n3.  **Enhanced Endurance:** Ferroelectric materials generally offer superior write endurance compared to NAND Flash, leading to longer-lasting and more reliable memory products.\n4.  **Instant-On Capability:** Devices utilizing this memory could achieve instant boot-up times, improving user experience and system responsiveness.\n5.  **Simplified System Design:** A unified memory architecture could simplify system-on-chip (SoC) designs, reducing bill-of-materials (BOM) costs and engineering complexity.\n\n**Revenue Potential:**\nRevenue potential for MFS transistor technology could stem from several avenues:\n*   **Licensing:** The patent holder could license the technology to major semiconductor manufacturers.\n*   **Proprietary Product Development:** Developing and selling MFS-based memory chips or integrated solutions.\n*   **IP Monetization:** Selling or cross-licensing the patent itself.\n*   **New Market Creation:** Enabling entirely new product categories (e.g., truly instant-on, always-connected edge devices) that were previously unfeasible due to memory limitations.\n\n**Business Models:**\nPotential business models include:\n*   **Fabless Semiconductor Model:** Design MFS memory controllers and IP, then outsource manufacturing.\n*   **Integrated Device Manufacturer (IDM):** Own the entire process from design to fabrication to sales.\n*   **Specialty Memory Provider:** Focus on niche markets requiring high-performance, low-power NVRAM (e.g., automotive ADAS, medical devices, aerospace).\n*   **IP Core Provider:** Offer MFS memory IP blocks for integration into larger SoC designs.\n\n**Strategic Positioning:**\nCompanies that adopt this MFS transistor technology could strategically position themselves as leaders in next-generation memory solutions. This could lead to differentiation in highly competitive markets by offering superior performance, power efficiency, and reliability. It also provides a hedge against the scaling limitations and increasing costs of existing memory technologies. Partnerships with device manufacturers (e.g., smartphone, laptop, server vendors) would be crucial for market penetration and establishing this as a new industry standard.\n\n**ROI Projections:**\nWhile specific ROI projections require detailed financial modeling, the potential for significant returns is high. Early adoption in high-value segments (e.g., enterprise SSDs, specialized AI accelerators) could generate substantial revenue. The long-term ROI would be driven by widespread adoption in mainstream computing, fueled by the inherent advantages of MFS memory. Reduced power consumption translates directly to lower operating costs for data centers, while improved device performance and battery life drive consumer demand. Investment in this technology could yield substantial returns by capturing a significant share of the evolving memory market and enabling new product categories.","faqs":[{"answer":"Memories with Metal-ferroelectric-semiconductor (mfs) Transistors (US-9852785) is a patent detailing an innovative method for operating memory cells that utilize Metal-Ferroelectric-Semiconductor (MFS) transistors. Unlike traditional memory, MFS transistors incorporate a ferroelectric material in their gate stack, allowing them to store data non-volatility.\n\nThe invention describes a precise sequence of applying specific voltages to distinct source lines of a memory and activating an access transistor. This coordinated control enables reliable and efficient write and read operations on the MFS transistor within the memory cell.\n\nEssentially, this patent provides the 'how-to' guide for making MFS transistors function as highly effective, persistent memory elements. It's a foundational step towards next-generation memory that combines speed with non-volatility.\n\nKeywords: MFS Transistors, Ferroelectric Memory, Non-volatile RAM, Memory Cell Operation, US-9852785.","question":"What is Memories with Metal-ferroelectric-semiconductor (mfs) Transistors?"},{"answer":"The core mechanism of Memories with Metal-ferroelectric-semiconductor (mfs) Transistors relies on manipulating the polarization of a ferroelectric material embedded within an MFS transistor. This material has two stable electrical polarization states, which can represent binary '0' and '1'.\n\nThe patented method involves applying specific first and second voltages to different source lines of the memory array. These voltages create the precise electrical fields needed to either switch the ferroelectric material's polarization (for a write operation) or sense its current state without changing it (for a read operation).\n\nAdditionally, an access transistor is turned on to select the specific memory cell, ensuring that only the target MFS transistor is affected. This controlled sequence allows for robust, fast, and non-volatile data storage and retrieval, overcoming limitations of conventional memory types.\n\nKeywords: MFS Transistor Function, Ferroelectric Polarization, Voltage Control, Read/Write Operations, Memory Mechanism.","question":"How does Memories with Metal-ferroelectric-semiconductor (mfs) Transistors work?"},{"answer":"Memories with Metal-ferroelectric-semiconductor (mfs) Transistors primarily solves the fundamental problem of the memory hierarchy trade-off. Currently, memory is divided into fast, volatile RAM (like DRAM) that loses data without power, and slower, non-volatile storage (like Flash) that retains data but has limitations in speed and endurance.\n\nThis patent aims to bridge this gap by enabling a single memory technology that offers both high-speed read/write capabilities and non-volatility. This means devices can be 'instant-on,' consume significantly less power (as no constant refresh is needed), and retain data even during power outages.\n\nBy providing a robust method for MFS transistor operation, this invention addresses the demand for a 'universal memory' that enhances overall system performance, reduces energy consumption, and simplifies device architecture across various computing platforms.\n\nKeywords: Memory Bottleneck, Universal Memory, Non-volatile RAM Problem, Power Consumption, Data Persistence.","question":"What problem does Memories with Metal-ferroelectric-semiconductor (mfs) Transistors solve?"},{"answer":"The patent US-9852785, titled Memories with Metal-ferroelectric-semiconductor (mfs) Transistors, lists specific inventors who contributed to this groundbreaking memory technology. While the provided patent data does not list individual inventors, the innovation is the result of dedicated research and development in the field of semiconductor memory.\n\nTypically, such patents are assigned to a company or institution that funds the research and development efforts, holding the intellectual property rights. The assignee for this patent is not specified in the provided data, but it would be the entity responsible for commercializing or licensing this technology.\n\nIdentifying the inventors and assignee is crucial for understanding the lineage and potential future development of this MFS transistor technology within the industry. This information is usually publicly available through patent databases.\n\nKeywords: Patent Inventors, Patent Assignee, US-9852785, Memory Innovation, Intellectual Property.","question":"Who invented Memories with Metal-ferroelectric-semiconductor (mfs) Transistors?"},{"answer":"The key benefits of Memories with Metal-ferroelectric-semiconductor (mfs) Transistors are multifold, addressing critical limitations of existing memory technologies. Firstly, it offers true non-volatility, meaning data is retained even when power is removed, eliminating the need for constant refreshing like DRAM.\n\nSecondly, it promises high-speed read and write operations, potentially rivaling or exceeding current DRAM speeds, which is a significant improvement over slower non-volatile memories like Flash. This combination of speed and persistence is a major differentiator.\n\nThirdly, this technology leads to lower power consumption due to its non-volatile nature and efficient operation, extending battery life in mobile devices and reducing energy costs in data centers. Finally, MFS transistors typically offer superior write endurance compared to Flash, leading to more reliable and longer-lasting memory devices.\n\nKeywords: MFS Transistor Benefits, Non-volatility, High Speed Memory, Low Power Memory, Memory Endurance.","question":"What are the key benefits of Memories with Metal-ferroelectric-semiconductor (mfs) Transistors?"},{"answer":"Memories with Metal-ferroelectric-semiconductor (mfs) Transistors distinguishes itself from prior art by offering a unique operational methodology for a 1T (one-transistor) MFS memory cell. Unlike 1T1C FeRAM, which uses a separate capacitor for ferroelectric storage, MFS integrates the ferroelectric material directly into the transistor's gate, allowing for greater scalability and density.\n\nCompared to DRAM, this technology is non-volatile, eliminating power-hungry refresh cycles and enabling instant-on capabilities. Versus NAND Flash, MFS memory offers significantly faster write speeds and much higher write endurance, addressing critical longevity and performance concerns.\n\nThe patent's specific contribution lies in its precise control of multiple source line voltages and access transistor activation to ensure reliable and efficient read/write operations on the MFS transistor, mitigating issues like fatigue and imprint often associated with ferroelectric devices. This sophisticated control scheme is a key differentiator.\n\nKeywords: MFS vs DRAM, MFS vs Flash, Prior Art Comparison, Memory Differentiation, Ferroelectric Technology.","question":"How is Memories with Metal-ferroelectric-semiconductor (mfs) Transistors different from prior art?"},{"answer":"Memories with Metal-ferroelectric-semiconductor (mfs) Transistors has the potential to impact a wide array of industries due to its versatile performance characteristics. The most immediate impacts are expected in sectors requiring high-performance, low-power, and non-volatile memory solutions.\n\n**Mobile and Consumer Electronics:** Enabling instant-on smartphones, extended battery life, and faster application loading. **Internet of Things (IoT) and Edge Computing:** Providing robust, energy-efficient memory for sensors, smart devices, and edge AI applications that need to process and store data locally without constant power.\n\n**Automotive:** Supporting advanced driver-assistance systems (ADAS) and autonomous vehicles that demand high-reliability, fast, non-volatile memory for real-time data processing. **Enterprise Storage and Data Centers:** Reducing power consumption and improving data throughput for cloud infrastructure and high-performance computing. This innovation is set to drive significant advancements across the digital landscape.\n\nKeywords: Industry Impact, MFS Applications, IoT Memory, Automotive Memory, Data Center Memory, Consumer Electronics.","question":"What industries will Memories with Metal-ferroelectric-semiconductor (mfs) Transistors impact?"},{"answer":"The patent Memories with Metal-ferroelectric-semiconductor (mfs) Transistors (US-9852785) was filed on **May 27, 2016**. The filing date marks the official submission of the patent application to the patent office.\n\nIt was subsequently published on **December 26, 2017**. The publication date is when the patent application becomes publicly accessible, allowing others to review the details of the invention.\n\nThese dates are important milestones in the lifecycle of any patent, indicating when the intellectual property was first claimed and when its details were made public. This timing is crucial for understanding its novelty relative to other technologies and its potential for commercialization.\n\nKeywords: Patent Filing Date, Publication Date, US-9852785, Patent Timeline, Intellectual Property Dates.","question":"When was Memories with Metal-ferroelectric-semiconductor (mfs) Transistors filed/granted?"},{"answer":"The commercial applications of Memories with Metal-ferroelectric-semiconductor (mfs) Transistors are extensive, driven by its ability to combine high speed with non-volatility and low power consumption. This makes it ideal for devices that require both quick access and persistent data retention.\n\nPotential applications include embedded memory in microcontrollers for IoT devices, offering long battery life and robust data logging. It could be used in solid-state drives (SSDs) to create faster, more durable storage solutions than current NAND Flash, or as main memory (RAM) in laptops and servers to enable instant-on capabilities and significant energy savings.\n\nFurthermore, its high endurance and reliability make it suitable for mission-critical systems in aerospace, medical devices, and industrial automation. The technology could also find application in specialized AI accelerators where persistent, high-bandwidth memory is crucial for efficient model processing.\n\nKeywords: Commercial Applications, MFS Products, Embedded Memory, SSD Technology, Instant-on Devices, AI Accelerators.","question":"What are the commercial applications of Memories with Metal-ferroelectric-semiconductor (mfs) Transistors?"},{"answer":"Future developments for Memories with Metal-ferroelectric-semiconductor (mfs) Transistors are likely to focus on further enhancing its performance, scalability, and cost-effectiveness. This will involve continued research in ferroelectric materials science to discover even more optimal materials with improved endurance, retention, and lower switching voltages.\n\nExpect advancements in fabrication processes to seamlessly integrate MFS transistors into next-generation semiconductor architectures like FinFET or Gate-All-Around (GAA) structures, pushing memory density even higher. There will also be efforts to develop more sophisticated memory controllers and interface standards to fully leverage the unique capabilities of this technology.\n\nLong-term, MFS memory could become a cornerstone of 'in-memory computing' or neuromorphic systems, where processing occurs directly within the memory, unlocking new levels of efficiency for AI and complex data analytics. The patent provides a strong foundation for these exciting future innovations.\n\nKeywords: Future Memory, MFS Development, Ferroelectric Materials, In-Memory Computing, Neuromorphic Systems, Memory Roadmap.","question":"What are the future developments expected for Memories with Metal-ferroelectric-semiconductor (mfs) Transistors?"}],"topics":["Memories with Metal-ferroelectric-semiconductor (mfs) Transistors","MFS Transistors","Ferroelectric Memory","Non-volatile Memory","Memory Technology","development","volatile","speed"],"tech_cluster":null},"seo":{"title":"Memories with MFS Transistors - Patent US-9852785","description":"Discover the groundbreaking Memories with Metal-ferroelectric-semiconductor (mfs) Transistors patent. Learn how this innovation enables faster, non-volatile memory with lower power.","keywords":["Memories with Metal-ferroelectric-semiconductor (mfs) Transistors","MFS Transistors","Ferroelectric Memory","Non-volatile Memory","Memory Technology","Semiconductor Memory","US-9852785 patent","memory cell operation","low power memory","high speed memory","universal memory","patent analysis"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852785","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852785","citation_suggestion":"Patentable. \"Memories with metal-ferroelectric-semiconductor (MFS) transistors\" (US-9852785). https://patentable.app/patents/US-9852785","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852785","json":"https://patentable.app/api/llm-context/US-9852785","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:38.535Z"}