{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852787","patent":{"patent_number":"US-9852787","title":"Semiconductor device, electronic component, and electronic device","assignee":null,"inventors":[],"filing_date":"2017-03-21T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G06F","G06F","G06F","G11C","G11C"],"num_claims":24,"abstract":"Provided is a semiconductor device having a memory cell array, which is capable of existing in three power-gating states depending on a non-access period to the memory cell array. The memory cell array includes a plurality of memory cells which each have an SRAM and a nonvolatile memory portion having a transistor with an oxide semiconductor in a channel region. The three power-gating states includes: a first state in which a power-gating to the memory cell array is performed; a second state in which the power-gating is performed on the memory cell array and peripheral circuits which control the memory cell array; and a third state in which, in addition to the memory cell array and the peripheral circuits, a power supply voltage supplying circuit is subjected to the power gating."},"analysis":{"summary":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent (US-9852787) introduces a pivotal innovation in energy-efficient memory design. Its core innovation lies in a semiconductor device featuring a memory cell array capable of operating in three distinct power-gating states, dynamically optimizing power consumption based on non-access periods.\n\nThe primary problem this invention solves is the significant quiescent power leakage inherent in traditional memory architectures. Even when inactive, conventional memory components continue to draw power, leading to reduced battery life in portable devices and substantial energy waste in larger systems like data centers. This limitation hinders the development of truly autonomous and sustainable electronic devices.\n\nThe key technical approach involves a hybrid memory cell design that integrates both SRAM (Static Random-Access Memory) for high-speed operation and a nonvolatile memory portion. Crucially, this nonvolatile portion utilizes a transistor with an oxide semiconductor in its channel region, known for its ultra-low leakage current. This combination ensures both rapid data access and reliable data retention during power-down. The three power-gating states are progressively deeper: the first gates the memory cell array, the second extends to peripheral control circuits, and the third includes the main power supply voltage supplying circuit, achieving maximum power savings.\n\nFrom a business value perspective, this innovation offers substantial competitive advantages. It enables manufacturers to design electronic components and devices with dramatically extended battery life, a critical differentiator in consumer electronics (smartphones, wearables) and industrial IoT. It also reduces operational costs and environmental impact for energy-intensive applications. The technology supports the growing demand for sustainable and high-performance electronics.\n\nThe market opportunity for this patent is vast, spanning mobile computing, IoT, edge AI, automotive electronics, and data center infrastructure. Any sector requiring robust, high-performance memory with stringent power constraints stands to benefit immensely. This technology provides a foundational building block for the next generation of energy-autonomous devices and systems.","layman_explanation":"Modern electronics, from the smartphone in your pocket to the complex servers in data centers, all rely on memory to function. However, a persistent challenge for engineers and product developers has been the significant amount of power consumed by memory chips, even when they're not actively being used. This 'always-on' characteristic is a major culprit behind short battery life in portable devices and substantial energy costs in large-scale computing.\n\n**1. What Problem Does This Solve?**\nThe core problem this patent, titled \"Semiconductor Device, Electronic Component, and Electronic Device,\" addresses is the inefficient power consumption of memory during idle periods. Imagine a light switch that, even when 'off,' still draws a tiny bit of electricity. That's essentially what happens with traditional memory. This constant, low-level power drain, known as quiescent power consumption, accumulates to become a significant energy waste. For businesses, this means higher operational costs for data centers, shorter product lifecycles due to battery degradation, and missed opportunities for truly long-lasting, autonomous devices like remote sensors or medical implants. Existing solutions often involve completely powering down memory, which can lead to slow wake-up times or the need for complex data backup and restoration, hindering user experience and system responsiveness.\n\n**2. How Does It Work?**\nThis innovation introduces a sophisticated approach to memory power management. Conceptually, it's like giving your device's memory a smart, multi-stage 'sleep' mode. The device combines two types of memory: fast, temporary memory (SRAM) for active tasks, and a special kind of permanent memory (nonvolatile memory) that can hold data even without power, thanks to a unique material called an 'oxide semiconductor.'\n\nHere’s the clever part: it has three different power-saving states:\n\n*   **Light Sleep:** If the memory isn't used for a short time, it enters a 'light sleep' where only the actual data storage parts (memory cells) power down. The control systems around them stay active, so the memory can 'wake up' almost instantly when needed. Think of it as dimming the lights in a room but keeping the main switch on.\n*   **Deep Sleep:** For longer idle periods, the memory goes into a 'deep sleep.' Now, not only do the memory cells power down, but also many of the surrounding control circuits. This saves even more power, though waking up might take a fraction of a second longer. This is like turning off the lights and some appliances in the room.\n*   **Ultra-Deep Sleep:** If the memory isn't needed for a very long time, it enters an 'ultra-deep sleep.' In this state, almost everything powers down, including the main power supply to that memory section. The permanent memory part ensures that all data is safely remembered, even with virtually no power. This is akin to unplugging everything in the room to save maximum energy.\n\nThis intelligent system dynamically chooses the appropriate sleep state, balancing power savings with the need for quick responsiveness.\n\n**3. Why Does This Matter?**\nThis patent matters because it directly tackles a fundamental limitation in electronic design. For consumers, it means devices with significantly longer battery life – a major selling point. For businesses, particularly in the burgeoning IoT sector, it enables the creation of devices that can operate autonomously for months or even years on a single charge, opening up new possibilities for remote monitoring and data collection. In data centers, where electricity costs are astronomical, this technology can lead to substantial reductions in power consumption and associated cooling expenses, boosting profitability and environmental sustainability. It provides a distinct competitive advantage for manufacturers who can now offer products that are not only high-performing but also exceptionally energy-efficient, aligning with global demands for green technology. This innovation allows companies to differentiate their offerings in crowded markets and meet increasingly stringent energy regulations.\n\n**4. What's Next?**\nLooking ahead, the principles laid out in this patent are likely to become foundational for future semiconductor design. We can expect to see wider adoption in next-generation processors, specialized memory modules, and embedded systems. This technology could accelerate the development of truly 'always-on, always-aware' devices that consume negligible power in standby, pushing the boundaries of what's possible in mobile computing, wearable tech, and pervasive AI at the edge. Investment in companies leveraging this approach could yield significant returns as the market shifts towards ultra-low-power solutions.","technical_analysis":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent (US-9852787) addresses a critical challenge in modern electronics: minimizing quiescent power consumption in memory subsystems. This detailed technical analysis will explore the architectural design, implementation specifics, and performance characteristics that underpin this innovative power management scheme.\n\n**Technical Architecture and Hybrid Memory Cell Design:**\nAt the heart of this invention is a semiconductor device comprising a memory cell array. Each memory cell within this array is a hybrid structure, integrating two distinct memory technologies: SRAM (Static Random-Access Memory) and a nonvolatile memory portion. The SRAM component provides the high-speed, volatile data storage necessary for active operations, while the nonvolatile portion ensures data persistence even when power is removed. A key aspect of the nonvolatile memory portion is its transistor, which features an oxide semiconductor in its channel region. Oxide semiconductors, such as IGZO (Indium Gallium Zinc Oxide), are chosen for their superior electrical characteristics, including extremely low leakage current, high on/off ratio, and excellent subthreshold swing, making them ideal for low-power, nonvolatile applications where data retention without continuous power is paramount. This hybrid approach allows the system to leverage the speed of SRAM while providing a reliable backup mechanism during power-gating events.\n\n**Implementation Details of Power-Gating States:**\nThis technology defines three progressive power-gating states, dynamically activated based on the non-access duration to the memory cell array. The implementation of these states requires sophisticated power management units and power-gating switches strategically placed throughout the memory subsystem.\n\n1.  **First State (Memory Cell Array Power-Gating):** In this state, power-gating is applied directly to the memory cell array. This typically involves using header or footer switches (e.g., PMOS or NMOS transistors) to cut off the main power supply (VDD) or ground (VSS) to individual memory blocks or rows when they are not being accessed. The peripheral circuits (decoders, sense amplifiers, write drivers) remain powered to ensure a rapid wake-up time. The challenge is to design power switches with low on-resistance to minimize voltage drop during active operation and high off-resistance to minimize leakage during power-gating.\n2.  **Second State (Memory Cell Array and Peripheral Circuits Power-Gating):** For longer idle periods, the power-gating extends to include both the memory cell array and its associated peripheral circuits. This requires additional power-gating switches for the peripheral blocks. The sequencing of power-down and power-up for these components is critical to prevent race conditions or data corruption. A retention mechanism, often leveraging the nonvolatile memory portion, is crucial to store the state of the SRAM cells before power is cut, and then restore it upon wake-up. This state achieves a more significant power reduction but might incur a slightly longer wake-up latency compared to the first state.\n3.  **Third State (Comprehensive Power-Gating):** This deepest power-saving state involves power-gating the memory cell array, the peripheral circuits, and the power supply voltage supplying circuit itself. This implies cutting off the main power rail to the entire memory subsystem. The nonvolatile memory portion's ability to retain data without power is absolutely essential here. The power supply gating typically involves high-voltage tolerant switches and a robust power management IC (PMIC) to control the main power delivery. This state offers the maximum power savings but comes with the longest wake-up latency, making it suitable for prolonged sleep modes or device shutdown.\n\n**Performance Characteristics and Integration Patterns:**\nPerformance characteristics of this system are defined by the trade-off between power savings and wake-up latency. The multi-tiered approach allows for flexibility: rapid wake-up from state one with moderate savings, deeper savings from state two with slightly longer wake-up, and maximum savings from state three with the longest wake-up. The integration of the oxide semiconductor nonvolatile memory is key to the reliability of data retention during power-gating, ensuring minimal data loss. The technology is designed to be integrated at the chip level, requiring careful co-design of memory arrays, peripheral logic, and power management units. This approach is highly relevant for System-on-Chip (SoC) designs where fine-grained power control is crucial for extending battery life and reducing thermal dissipation.\n\n**Code-Level Implications:**\nFrom a software perspective, this invention implies that operating systems or firmware will need to implement intelligent power management policies that can dynamically switch between these three states. APIs would be required to signal memory access patterns or expected idle durations to the underlying hardware, allowing the power management unit to select the most appropriate power-gating state. This could involve driver-level optimizations to put memory into deeper sleep modes when applications are idle or when the device enters a low-power state. The robust data retention provided by the nonvolatile memory simplifies the software's task of managing memory state across power cycles, reducing the need for complex data flushing or restoration routines in many scenarios.","business_analysis":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent (US-9852787) represents a significant leap in semiconductor power management, offering a compelling value proposition for businesses across various sectors. Its strategic implications extend far beyond mere technical innovation, touching on market opportunity, competitive advantage, revenue potential, and strategic positioning.\n\n**Market Opportunity Size:**\nThe market for energy-efficient electronics is immense and growing rapidly. With the proliferation of IoT devices, wearable technology, edge computing, and the increasing demand for longer battery life in smartphones and laptops, the need for lower power consumption in memory is critical. The global semiconductor memory market alone is valued in the hundreds of billions of dollars, with power efficiency being a key differentiator. This patent taps into a segment hungry for solutions that can extend device autonomy and reduce operational costs. The ability to dramatically cut quiescent power consumption opens doors in new markets requiring ultra-low-power, long-duration operation, such as remote environmental sensors, medical implants, and industrial monitoring systems. The addressable market is truly expansive, encompassing almost every electronic device that relies on memory.\n\n**Competitive Advantages:**\nThis innovation offers several distinct competitive advantages:\n\n1.  **Superior Energy Efficiency:** The multi-tiered power-gating system, combined with hybrid SRAM and oxide semiconductor nonvolatile memory, provides an unparalleled level of power savings compared to traditional memory designs. This translates directly into extended battery life, a highly desirable feature for consumers and industrial users alike.\n2.  **Performance and Reliability:** Unlike simple power-down modes that can introduce latency or data loss, this system intelligently manages power while ensuring data integrity through its nonvolatile component. This balance of performance and reliability is a critical differentiator.\n3.  **Versatility:** The three power-gating states allow for flexible power management, adaptable to various usage scenarios – from short idle periods to prolonged deep sleep. This versatility enables designers to optimize for specific application requirements without compromising on efficiency.\n4.  **Reduced Total Cost of Ownership (TCO):** For data centers and large-scale deployments, lower power consumption directly translates to reduced electricity bills and cooling costs, offering a significant TCO advantage.\n\n**Revenue Potential and Business Models:**\nCompanies that license or implement this technology can unlock substantial revenue streams. Potential business models include:\n\n*   **Licensing:** Semiconductor IP providers can license this patent to chip manufacturers, generating royalties based on unit sales.\n*   **Component Sales:** Memory manufacturers can develop and sell specialized memory modules incorporating this technology, commanding premium pricing due to superior power efficiency.\n*   **Product Differentiation:** Device manufacturers (e.g., smartphone, IoT, automotive OEMs) can integrate this innovation into their products, using enhanced battery life and performance as key marketing advantages to drive sales and market share.\n*   **Ecosystem Development:** Companies could build entire ecosystems around ultra-low-power platforms, offering complete solutions that leverage this memory technology.\n\n**Strategic Positioning:**\nImplementing this patent allows companies to strategically position themselves as leaders in sustainable electronics and high-performance, low-power computing. It aligns with global trends towards environmental responsibility and energy conservation. For a company focused on IoT, this technology could become a cornerstone of their long-duration sensor solutions. For a mobile device company, it could be the key to leapfrogging competitors in battery performance. This innovation provides a robust foundation for future product roadmaps, enabling the creation of devices that were previously limited by power constraints.\n\n**ROI Projections:**\nThe return on investment for adopting this technology is projected to be significant. For product manufacturers, increased sales due to enhanced battery life and performance can lead to rapid market share gains. For enterprises, reduced energy costs in data centers and extended maintenance cycles for remote devices offer direct bottom-line benefits. The long-term strategic value of being at the forefront of energy-efficient design, coupled with potential market dominance, suggests a very strong ROI for early adopters and innovators.","faqs":[{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" (US-9852787) is a groundbreaking patent that describes an innovative semiconductor device designed to dramatically reduce power consumption in electronic memory. At its core, this invention features a memory cell array that integrates both high-speed SRAM (Static Random-Access Memory) and a nonvolatile memory portion. This nonvolatile part is particularly innovative, as it utilizes a transistor with an oxide semiconductor in its channel region, known for its ultra-low leakage current and reliable data retention without continuous power.\n\nThe key differentiator of this patent is its ability to operate in three distinct power-gating states. These states allow the memory to dynamically adjust its power consumption based on how long it has been inactive. Instead of being 'always on' and drawing power, this technology enables the memory to enter various 'sleep' modes, from a light nap to a deep hibernation, thereby conserving significant amounts of energy.\n\nEssentially, this patent provides a blueprint for creating electronic components and devices that are far more energy-efficient, leading to extended battery life, reduced operational costs, and a smaller environmental footprint. It's a foundational step towards more sustainable and autonomous electronic systems. This Semiconductor Device, Electronic Component, and Electronic Device innovation is set to redefine memory power management.","question":"What is Semiconductor Device, Electronic Component, and Electronic Device?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" operates through a sophisticated, multi-tiered power-gating mechanism. The core idea is to intelligently cut off power to inactive parts of the memory subsystem, rather than keeping them constantly powered.\n\nFirstly, each memory cell within the array combines fast-access SRAM with a nonvolatile memory portion that uses an oxide semiconductor transistor. This hybrid design allows for quick data access when needed and reliable data retention even when power is removed. The oxide semiconductor is critical here due to its extremely low leakage current, ensuring data integrity during power-gating.\n\nSecondly, the system dynamically selects one of three power-gating states based on the non-access period to the memory:\n1.  **First State:** For short idle periods, power-gating is applied only to the memory cell array. Peripheral control circuits remain active, allowing for very fast wake-up.\n2.  **Second State:** For longer idle periods, power-gating extends to both the memory cell array and its peripheral circuits, achieving deeper power savings with a slightly longer wake-up time.\n3.  **Third State:** For very long non-access periods, the deepest sleep state is engaged, where the memory cell array, peripheral circuits, and even the power supply voltage supplying circuit are subjected to power-gating. Data is safely stored in the nonvolatile portion, and maximum power savings are achieved.\n\nThis intelligent adaptation ensures that power is consumed only when and where it is absolutely necessary, making the Semiconductor Device, Electronic Component, and Electronic Device highly efficient.","question":"How does Semiconductor Device, Electronic Component, and Electronic Device work?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent primarily solves the critical problem of excessive quiescent power consumption in electronic memory. In traditional memory architectures, particularly SRAM, a significant amount of power is continuously drawn, even when the memory is not actively being read from or written to. This 'always-on' characteristic leads to several major issues.\n\nFor portable and battery-powered devices like smartphones, wearables, and IoT sensors, this constant power drain directly translates to short battery life and frequent recharging. For large-scale computing infrastructure, such as data centers, this quiescent power contributes to immense electricity bills and substantial cooling requirements, increasing operational costs and environmental impact. Furthermore, this limitation hinders the development of truly autonomous devices that can operate for extended periods without human intervention or external power.\n\nThis invention provides a solution by introducing a dynamic, multi-tiered power management system that intelligently reduces power consumption during idle periods. By allowing memory components to enter various power-gating states, the Semiconductor Device, Electronic Component, and Electronic Device eliminates wasteful energy consumption, thereby extending battery life, reducing operational expenses, and enabling the creation of more sustainable and long-lasting electronic devices. It addresses a fundamental bottleneck in modern electronics design.","question":"What problem does Semiconductor Device, Electronic Component, and Electronic Device solve?"},{"answer":"The patent for \"Semiconductor Device, Electronic Component, and Electronic Device\" (US-9852787) was granted with specific inventors listed on the official patent document. However, the provided patent data does not include the names of the individual inventors or the assignee (the company or entity to whom the patent rights are assigned).\n\nTypically, such innovations are the result of dedicated research and development teams within leading semiconductor companies or academic institutions. These inventors are often experts in fields like semiconductor physics, device engineering, circuit design, and power management. Their collective expertise leads to the complex integration of various technologies, such as SRAM, nonvolatile memory, and oxide semiconductor transistors, that define this patent.\n\nWhile the specific individuals are not listed here, the creation of the Semiconductor Device, Electronic Component, and Electronic Device represents a significant collaborative effort to push the boundaries of energy-efficient electronics. The patent itself serves as a testament to their ingenuity and technical prowess in addressing a critical challenge in modern computing.","question":"Who invented Semiconductor Device, Electronic Component, and Electronic Device?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent offers a multitude of benefits that are poised to significantly impact the electronics industry and end-users alike. Primarily, the most compelling advantage is a dramatic **reduction in power consumption**, especially during idle periods. This is achieved through its innovative three-tiered power-gating system, which dynamically optimizes energy use based on memory activity.\n\nThis leads directly to **extended battery life** for portable electronic devices such, smartphones, wearables, and laptops, a critical differentiator in today's market. For IoT devices and remote sensors, it enables **unprecedented operational autonomy**, allowing them to function for months or even years on a single charge, drastically reducing maintenance costs and expanding deployment possibilities.\n\nFurthermore, the technology ensures **reliable data retention** even in deep power-gating states, thanks to its integrated nonvolatile memory portion with an oxide semiconductor. This means power savings don't come at the cost of data integrity. For large-scale applications like data centers, implementing this innovation can result in **substantial reductions in electricity bills and cooling expenses**, contributing to a greener and more cost-effective computing infrastructure. Overall, the Semiconductor Device, Electronic Component, and Electronic Device promotes a future of more efficient, sustainable, and long-lasting electronic components and systems.","question":"What are the key benefits of Semiconductor Device, Electronic Component, and Electronic Device?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent distinguishes itself from prior art through several key innovations that collectively offer a more comprehensive and efficient solution to memory power management. Traditional approaches often involve simpler power-gating (a binary on/off), clock gating (reduces dynamic power but not static leakage), or separate nonvolatile memory (NVM) solutions for data backup.\n\nOne significant difference is the **hybrid memory cell design** itself. This invention integrates both SRAM and a nonvolatile memory portion, featuring an oxide semiconductor transistor, directly within each memory cell. Prior art often relied on separate SRAM and NVM blocks, requiring complex and power-consuming data transfers between them during power cycles. The in-cell integration of the Semiconductor Device, Electronic Component, and Electronic Device streamlines this process and improves efficiency.\n\nAnother crucial distinction is the **multi-tiered power-gating system with three distinct states**. Unlike basic power-gating which offers limited flexibility, this patent dynamically adapts power reduction based on the non-access duration. This granularity allows for optimal trade-offs between power savings and wake-up latency, something less sophisticated prior art solutions struggle to achieve. For instance, while some prior art offers retention modes, they still consume continuous power. This invention's deepest power-gating state, which gates the power supply itself, achieves near-zero power consumption, a significant improvement. The Semiconductor Device, Electronic Component, and Electronic Device thus represents a leap forward in intelligent, adaptive power management for memory.","question":"How is Semiconductor Device, Electronic Component, and Electronic Device different from prior art?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent has the potential to profoundly impact a wide array of industries that rely heavily on electronic components and memory. Its core benefit of dramatically reducing power consumption makes it relevant across sectors where energy efficiency and extended battery life are critical.\n\n**Mobile and Consumer Electronics:** This includes smartphones, tablets, laptops, wearables (smartwatches, fitness trackers), and portable gaming devices. Longer battery life is a top consumer demand, and this technology can provide a significant competitive edge.\n\n**Internet of Things (IoT) and Edge Computing:** Billions of IoT devices, from smart home sensors to industrial monitoring equipment, require ultra-low power operation for extended autonomy. This patent is foundational for enabling truly long-lasting, maintenance-free IoT deployments and more powerful, efficient edge AI devices.\n\n**Data Centers and Cloud Computing:** While often mains-powered, data centers consume vast amounts of electricity. Reducing quiescent power in memory modules can lead to substantial energy savings, lower cooling costs, and a smaller carbon footprint for cloud service providers.\n\n**Automotive Electronics:** Modern vehicles are packed with electronics, and power management is crucial for everything from infotainment to advanced driver-assistance systems (ADAS). This innovation can contribute to more efficient and reliable automotive systems.\n\n**Medical Devices:** Implantable and portable medical devices require highly reliable, low-power components for patient safety and device longevity. The Semiconductor Device, Electronic Component, and Electronic Device can enable smaller, longer-lasting, and more efficient medical solutions. This broad applicability underscores the transformative potential of the Semiconductor Device, Electronic Component, and Electronic Device.","question":"What industries will Semiconductor Device, Electronic Component, and Electronic Device impact?"},{"answer":"The patent for \"Semiconductor Device, Electronic Component, and Electronic Device\" was officially filed on **2017-03-21**. This date marks when the application was submitted to the patent office, initiating the examination process.\n\nFollowing the examination period, during which the patent office reviews the claims, novelty, and inventiveness of the technology, the patent was subsequently published. The publication date for Semiconductor Device, Electronic Component, and Electronic Device is **2017-12-26**. This date signifies when the patent document became publicly available, disclosing the details of the invention to the world.\n\nThese dates are important for understanding the timeline of the innovation and its place within the broader technology landscape. The period between filing and publication allows for the development and refinement of the technology while maintaining patent protection. The publication of the Semiconductor Device, Electronic Component, and Electronic Device patent makes its groundbreaking power-gating capabilities accessible for analysis and potential commercialization.","question":"When was Semiconductor Device, Electronic Component, and Electronic Device filed/granted?"},{"answer":"The commercial applications of the \"Semiconductor Device, Electronic Component, and Electronic Device\" patent are extensive, driven by the universal demand for energy efficiency across electronic products. Its ability to drastically reduce memory power consumption unlocks significant value across multiple market segments.\n\nIn **consumer electronics**, this technology can lead to smartphones, laptops, and wearables with significantly extended battery life, becoming a major selling point for manufacturers and a key factor in consumer choice. Imagine devices that last days instead of hours, reducing charging anxiety.\n\nFor the rapidly expanding **Internet of Things (IoT)** sector, the applications are transformative. Remote sensors, smart home devices, industrial IoT nodes, and agricultural monitoring systems can achieve unprecedented autonomy, operating for months or years on a single charge. This reduces maintenance costs, simplifies deployment in remote areas, and expands the feasibility of large-scale IoT networks. Edge AI devices can also become more powerful and efficient.\n\nIn **data centers and cloud infrastructure**, implementing this technology in server memory can lead to substantial reductions in operational costs related to electricity consumption and cooling. This contributes to a more sustainable and economically viable cloud computing model.\n\nFurthermore, specialized applications in **automotive electronics** (e.g., advanced driver-assistance systems, infotainment) and **medical devices** (e.g., implantable devices, portable diagnostic tools) can benefit from enhanced power efficiency and reliability. The Semiconductor Device, Electronic Component, and Electronic Device provides a foundational technology for a new generation of high-performance, low-power products across these diverse commercial landscapes.","question":"What are the commercial applications of Semiconductor Device, Electronic Component, and Electronic Device?"},{"answer":"The \"Semiconductor Device, Electronic Component, and Electronic Device\" patent lays a robust foundation for future developments in energy-efficient memory and electronic components. Several key trends and advancements are expected to emerge from this innovation.\n\nOne primary area of future development will be the **further optimization of wake-up latency** from the deeper power-gating states. As the technology matures, engineers will likely find ways to reduce the time it takes for the memory subsystem to transition from comprehensive power-gating to full operational readiness, making deep sleep modes even more versatile. This could involve faster power-up sequencing or more efficient data restoration mechanisms from the nonvolatile portion.\n\nAnother expected development is the **integration of this power-gating philosophy across entire System-on-Chip (SoC) architectures**. Rather than just memory, future SoCs might dynamically power-gate various functional blocks (e.g., specific processing units, I/O interfaces) using similar multi-tiered approaches. This holistic power management will lead to even greater system-level energy efficiency. Furthermore, research into **alternative or enhanced oxide semiconductor materials** could lead to even lower leakage currents and improved reliability for the nonvolatile memory portion.\n\nWe can also anticipate the development of **smarter software and firmware** that can more intelligently predict memory access patterns, allowing the hardware to proactively enter the most appropriate power-gating state. This predictive power management, driven by AI/ML algorithms, will maximize energy savings. Ultimately, the Semiconductor Device, Electronic Component, and Electronic Device is expected to evolve into a cornerstone technology enabling truly autonomous, long-lasting, and sustainable electronic devices that seamlessly integrate into our daily lives.","question":"What are the future developments expected for Semiconductor Device, Electronic Component, and Electronic Device?"}],"topics":["semiconductor device","power gating","memory cell array","SRAM","nonvolatile memory","relentless","pursuit","energy"],"tech_cluster":null},"seo":{"title":"Semiconductor Device, Electronic Component, and Electronic Device - Patent US-9852787","description":"Discover the Semiconductor Device, Electronic Component, and Electronic Device patent for memory with three power-gating states. Achieve ultra-low power consumption & extended battery life. Full analysis.","keywords":["semiconductor device","power gating","memory cell array","SRAM","nonvolatile memory","oxide semiconductor","energy efficiency","electronic components","US-9852787 patent","low power memory","battery life extension","IoT power management","electronic device innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852787","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852787","citation_suggestion":"Patentable. \"Semiconductor device, electronic component, and electronic device\" (US-9852787). https://patentable.app/patents/US-9852787","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852787","json":"https://patentable.app/api/llm-context/US-9852787","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:57:24.091Z"}