{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852795","patent":{"patent_number":"US-9852795","title":"Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices","assignee":null,"inventors":[],"filing_date":"2016-09-22T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A method of operating a nonvolatile memory device includes performing a first memory operation on a first memory block of a plurality of memory blocks and a curing operation on a portion of the first memory block when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed. The nonvolatile memory device includes the plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate."},"analysis":{"summary":"The patent, \"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices,\" introduces an innovative approach to significantly enhance the longevity and reliability of nonvolatile memory devices, particularly those with 3D NAND architectures. The core innovation is a proactive 'curing operation' performed on specific portions of memory blocks.\n\nThe primary problem this invention solves is the inherent degradation of nonvolatile memory cells over time due to repeated program/erase cycles. This degradation leads to reduced data retention, increased error rates, and ultimately, a shorter operational lifespan for storage devices, incurring higher maintenance costs and potential data loss for users and enterprises.\n\nThis technology's key technical approach involves intelligently scheduling a 'curing operation'. This operation is executed on a memory block after a primary memory operation is completed, but only when the nonvolatile memory device indicates a 'ready state' and a sufficient 'reference interval' has passed. This ensures that the maintenance process is non-disruptive, utilizing idle device time to rejuvenate memory cells. The patent specifically references memory blocks comprising vertical strings, indicating its applicability to advanced 3D NAND flash.\n\nFrom a business perspective, this invention offers substantial value. It enables manufacturers to produce more durable and reliable nonvolatile memory products, leading to extended product warranties and improved customer satisfaction. For enterprise users, it translates to a lower total cost of ownership (TCO) for SSDs and data center storage, reduced downtime, and enhanced data integrity. The ability to proactively maintain memory health opens new avenues for denser and more performant memory technologies.\n\nThis innovation taps into a vast market opportunity in the global data storage industry, which is constantly seeking solutions for increased capacity and improved endurance. By providing a fundamental improvement in memory reliability, this technology positions itself as a critical enabler for next-generation computing, from high-performance computing and AI infrastructure to ubiquitous consumer electronics and automotive applications.","layman_explanation":"### What Problem Does This Solve?\nImagine your smartphone, laptop, or even the massive servers in a data center. All these devices rely on nonvolatile memory – like the flash memory in your SSDs – to store your precious photos, documents, and applications. The problem is, this memory isn't invincible. Every time you save, delete, or modify data, the tiny cells within the memory chip experience a bit of wear and tear. Over time, this wear causes the memory to degrade. It can become slower, less reliable, and eventually, it might even fail, leading to lost data or the need to replace expensive hardware prematurely. For businesses, this translates to high operational costs, unpredictable hardware lifespans, and the constant risk of data integrity issues. Existing solutions often involve complex error correction or simply over-provisioning (buying more memory than you need), which are not always efficient or cost-effective.\n\n### How Does It Work?\nThe patent, \"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices,\" introduces a clever, proactive solution to this widespread problem. Think of it like a car that performs its own maintenance check-ups at optimal times. The core of this innovation is a 'curing operation' – a special process designed to rejuvenate or repair parts of the memory. Crucially, this operation doesn't happen randomly or when something breaks. Instead, it's intelligently scheduled.\n\nHere’s the conceptual breakdown: After your device finishes a major memory task, like saving a big file, it enters a 'ready state' – essentially, it's taking a breather. If this 'ready state' lasts for a certain amount of time (a 'reference interval'), the device's built-in intelligence decides it's the perfect, non-disruptive moment to perform a curing operation on a specific portion of its memory. This process helps to restore the health of the memory cells, making them more resilient to future wear. This invention is particularly relevant for advanced 3D NAND memory, which stacks memory cells vertically, making their maintenance even more complex.\n\n### Why Does This Matter?\nThis innovation matters immensely because it fundamentally changes how we approach memory reliability. Instead of waiting for errors to occur and then trying to fix them (reactive), this technology actively prevents degradation (proactive). For businesses, this means: \n*   **Extended Hardware Lifespan:** Your SSDs and memory modules will last significantly longer, delaying costly replacement cycles. This directly impacts the total cost of ownership (TCO) for data centers and enterprises.\n*   **Enhanced Data Integrity:** By keeping memory cells healthier, the risk of data corruption or loss is substantially reduced, safeguarding critical business information.\n*   **Improved Performance Consistency:** Proactive maintenance ensures memory performs optimally throughout its life, avoiding the slowdowns associated with degraded cells.\n*   **Competitive Advantage:** Companies adopting this technology can offer more robust and reliable products, differentiating themselves in a crowded market. It also enables the use of denser, more cost-effective memory technologies like QLC NAND with greater confidence in their long-term performance.\n\n### What's Next?\nThe future implications of this patent are vast. We can expect to see nonvolatile memory devices that are not only larger and faster but also inherently more durable and reliable. This will accelerate advancements in areas like artificial intelligence, big data analytics, and cloud computing, all of which demand incredibly robust storage solutions. As memory continues to be a bottleneck for many high-performance applications, innovations like this approach are crucial for unlocking the next generation of computing capabilities. It sets a new standard for intelligent memory management, promising a future where our digital storage is not just expansive, but also exceptionally resilient.","technical_analysis":"The patent \"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices\" introduces a sophisticated methodology for managing the operational integrity and extending the lifespan of nonvolatile memory devices, with a particular emphasis on architectures featuring vertical strings, characteristic of 3D NAND flash. The technical essence of this invention lies in its proactive, condition-based 'curing operation' rather than purely reactive error correction.\n\n**Technical Architecture and Implementation Details**\nThe core architecture involves a nonvolatile memory device comprising a plurality of memory blocks. Each memory block, in turn, contains a plurality of vertical strings, which are the fundamental memory cell structures in 3D NAND. The invention necessitates a memory controller (or a dedicated firmware component within it) capable of monitoring the operational status of the memory device and tracking the timing of memory operations. Specifically, the controller must discern when a 'first memory operation' (e.g., a program or write operation) on a given memory block has completed.\n\nThe innovative aspect is the initiation of a 'curing operation' on a *portion* of that memory block. This operation is not arbitrary but is governed by two critical conditions: \n1.  A 'status signal' must indicate a 'ready state' of the nonvolatile memory device. This implies the device is not actively engaged in high-priority data transfers and has available resources (e.g., power, internal bandwidth) for maintenance tasks.\n2.  An 'interval' equal to or greater than a 'reference interval' must have elapsed since the completion of the first memory operation. This temporal condition ensures that the curing operation is performed not immediately after heavy usage, but after a period that allows for potential relaxation of stress or, conversely, before degradation becomes irreversible.\n\nImplementation would involve specialized firmware within the memory controller. This firmware would include: \n*   **State Machine Logic:** To continuously monitor the device's operational state and identify 'ready states'.\n*   **Timer/Scheduler:** To track the elapsed time since the last primary operation on each memory block or sub-block and compare it against the 'reference interval'. This interval could be dynamically adjusted based on wear-leveling data or predicted cell degradation.\n*   **Curing Algorithm Module:** This module would contain the specific sequence of operations constituting the 'curing'. This might involve a series of low-voltage program/erase cycles, annealing sequences, or specific read/verify patterns designed to redistribute charge, reduce trapped electrons, or mitigate threshold voltage shifts within the memory cells. The 'portion' of the memory block implies granular control, potentially targeting specific word lines, pages, or even individual vertical strings that show signs of stress or higher error rates.\n\n**Algorithm Specifics and Performance Characteristics**\nThe curing algorithm is designed to address the physical degradation mechanisms inherent in nonvolatile memory, such as trap generation in the tunnel oxide and charge loss from floating gates/charge traps. By performing controlled operations, the curing process aims to: \n*   **Reduce RBER (Raw Bit Error Rate):** By restoring cell characteristics, fewer raw errors occur, reducing the burden on ECC engines.\n*   **Extend P/E (Program/Erase) Endurance:** Proactive maintenance delays the onset of critical wear-out, increasing the total number of cycles a block can sustain.\n*   **Improve Data Retention:** By stabilizing charge states, the ability of cells to hold data over time is enhanced.\n*   **Minimize Performance Impact:** The condition-based triggering (ready state, reference interval) ensures that the curing operation does not introduce significant latency during peak operational periods. It leverages otherwise idle cycles, making it an 'opportunistic' background task.\n\n**Integration Patterns and Code-Level Implications**\nThis technology would integrate at the lowest layers of the storage stack, primarily within the Flash Translation Layer (FTL) and device firmware. The FTL would need to be aware of the curing operations, potentially marking blocks under cure as temporarily unavailable for host operations or prioritizing host requests over curing tasks if contention arises. From a code perspective, this implies robust interrupt handling, efficient task scheduling, and sophisticated error management routines that can differentiate between errors requiring ECC and those indicating a need for a curing operation. It would likely involve modifications to existing wear-leveling algorithms to incorporate the benefits of curing, possibly by adjusting the perceived 'wear' of a block after a successful cure. The patent's focus on vertical strings underscores its direct relevance to optimizing the complex programming and erasing schemes of 3D NAND, where cell-to-cell interference and disturb effects are significant challenges.","business_analysis":"The \"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices\" patent represents a significant business opportunity within the rapidly expanding data storage industry. As global data generation continues its exponential growth, the demand for high-capacity, high-performance, and crucially, highly reliable nonvolatile memory solutions is insatiable. This invention directly addresses one of the most critical pain points in this sector: the inherent degradation and finite lifespan of flash memory.\n\n**Market Opportunity Size:** The global NAND flash market alone is projected to reach hundreds of billions of dollars in the coming years. Every device, from smartphones and IoT gadgets to enterprise SSDs and cloud data centers, relies on nonvolatile memory. The ability to extend the lifespan and improve the reliability of these fundamental components taps into a market of immense scale, offering value across the entire supply chain – from memory manufacturers to system integrators and end-users.\n\n**Competitive Advantages:** This patent provides a substantial competitive edge. Current solutions for memory degradation often involve reactive error correction (ECC), over-provisioning (sacrificing usable capacity), or simply accepting a limited lifespan. This technology's proactive 'curing operation' offers a superior approach: \n1.  **Extended Lifespan:** Devices incorporating this innovation can boast significantly higher program/erase cycle endurance, a key metric for enterprise customers.\n2.  **Reduced Total Cost of Ownership (TCO):** For data centers, longer-lasting SSDs mean fewer replacements, reduced maintenance, and lower operational expenditures.\n3.  **Improved Data Integrity:** Proactive maintenance leads to lower raw bit error rates (RBER), enhancing data reliability and reducing the risk of costly data loss.\n4.  **Optimized Performance:** By leveraging idle device time for curing, the technology avoids performance bottlenecks associated with reactive maintenance, ensuring consistent speed.\n\n**Revenue Potential and Business Models:** Memory manufacturers (e.g., Samsung, Micron, SK Hynix, Kioxia) can integrate this patented technology into their 3D NAND controllers and firmware, selling premium-tier SSDs and memory modules with enhanced endurance. This could command higher margins. Licensing opportunities exist for smaller players or specialized controller manufacturers. System integrators and cloud providers could market 'ultra-reliable' or 'long-life' storage solutions, differentiating their services.\n\n**Strategic Positioning:** This invention positions companies at the forefront of memory technology, moving beyond mere capacity increases to address fundamental reliability challenges. It enables the adoption of even denser memory technologies (like QLC NAND) with greater confidence, accelerating the roadmap for next-generation storage. It aligns perfectly with trends towards 'self-healing' and 'intelligent' hardware, which are becoming increasingly important in complex, distributed systems.\n\n**ROI Projections:** For enterprise customers, the ROI is clear: extended hardware life leads to deferred capital expenditure on replacements, reduced operational costs related to maintenance and data recovery, and improved business continuity due to enhanced reliability. A conservative estimate of a 20-30% increase in effective device lifespan could translate into millions of dollars saved for large-scale deployments. For manufacturers, the ability to offer differentiated, high-value products can lead to increased market share and brand reputation in a highly competitive landscape. This technology is not just about extending a product's life; it's about fundamentally improving the value proposition of nonvolatile memory across all applications.","faqs":[{"answer":"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices is a patent (US-9852795) that describes an innovative method for enhancing the operational lifespan and reliability of nonvolatile memory devices. At its core, this invention introduces a 'curing operation' – a proactive maintenance process designed to rejuvenate memory cells.\n\nThis method is intelligently scheduled to occur when the memory device is in a 'ready state' (i.e., idle) for a specific duration after a primary memory operation has been completed. This ensures that the curing process does not interfere with active data operations, making it highly efficient and non-disruptive.\n\nThe patent specifically highlights its applicability to memory devices that include a plurality of memory blocks, each containing vertical strings. This architecture is characteristic of advanced 3D NAND flash memory, which is widely used in SSDs, smartphones, and data centers. The technology aims to combat the inherent degradation of these memory cells over time.","question":"What is Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices?"},{"answer":"The technology described in Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices works through a precisely timed 'curing operation'. Here's a step-by-step breakdown:\n\nFirst, a primary memory operation, such as writing data to a memory block, is completed. Instead of simply moving on, the system then monitors the memory device's status.\n\nSecond, the 'curing operation' is only initiated if two crucial conditions are met: the device must be in a 'ready state' (meaning it's not busy with other high-priority tasks), and a specific 'reference interval' of time must have passed since the completion of the first memory operation. This intelligent scheduling ensures the curing process utilizes otherwise idle time.\n\nFinally, when these conditions are met, a 'curing operation' is performed on a *portion* of the memory block. While the exact physical mechanism of 'curing' isn't detailed, it conceptually involves electrical processes designed to restore or improve the characteristics of degraded memory cells, such as relaxing trapped charges or annealing defects, thereby extending their endurance. This proactive approach helps maintain memory health throughout its operational life.","question":"How does Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices work?"},{"answer":"The Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices patent primarily solves the critical problem of inherent degradation and finite lifespan in nonvolatile memory devices. Flash memory cells, particularly those in 3D NAND architectures, experience wear and tear with every program/erase cycle.\n\nThis degradation leads to several issues: reduced data retention capabilities, an increase in raw bit error rates (RBER), slower performance, and ultimately, a shorter operational lifespan for the memory device. For consumers, this means devices that slow down or fail prematurely. For enterprises, it translates to higher total cost of ownership (TCO) for storage, increased maintenance, and the constant risk of data loss or system downtime.\n\nThis technology addresses these challenges by introducing a proactive 'curing operation' that actively mitigates degradation, thereby extending the effective lifespan and improving the long-term reliability of nonvolatile memory, moving beyond reactive error correction.","question":"What problem does Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices solve?"},{"answer":"The inventors of Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices are not listed in the provided patent data. Often, patent filings from large corporations are assigned directly to the company, and individual inventor names might be withheld in public summaries or require deeper database access.\n\nHowever, the innovation typically originates from research and development teams within leading semiconductor or memory manufacturing companies. These teams consist of highly specialized engineers and scientists focusing on memory device physics, circuit design, and firmware development. Their collective expertise is crucial for developing such advanced memory management techniques.\n\nRegardless of the specific individuals, this invention represents a significant contribution to the field of nonvolatile memory technology, addressing fundamental challenges in device endurance and reliability. The focus on 'vertical strings' suggests a strong background in 3D NAND development.","question":"Who invented Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices?"},{"answer":"The Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices patent offers several key benefits:\n\n1.  **Extended Device Lifespan:** By proactively 'curing' memory cells, the technology significantly increases the program/erase cycle endurance of nonvolatile memory, leading to much longer operational lives for SSDs and other devices.\n2.  **Improved Reliability and Data Integrity:** Proactive maintenance keeps the raw bit error rate (RBER) lower throughout the device's life, reducing the need for heavy error correction and minimizing the risk of data loss.\n3.  **Optimized Performance:** The curing operation is strategically scheduled during idle periods, ensuring it does not interfere with active data operations, thus maintaining consistent high performance.\n4.  **Reduced Total Cost of Ownership (TCO):** For enterprises, longer-lasting memory means fewer hardware replacements and lower maintenance costs, leading to substantial savings over time.\n5.  **Enables Denser Memory Technologies:** By enhancing endurance, this invention makes it more feasible to adopt higher-density, lower-cost NAND technologies like QLC (Quad-Level Cell) for a wider range of applications, accelerating technological advancements in storage.","question":"What are the key benefits of Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices?"},{"answer":"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices distinguishes itself from prior art by shifting from reactive to proactive memory management. Traditional methods like Error Correction Codes (ECC) detect and correct errors *after* they occur, while wear-leveling distributes wear but doesn't rejuvenate cells.\n\nThis invention's 'curing operation' actively intervenes to improve the electrical characteristics of memory cells, effectively 'healing' them before significant degradation occurs. This is a fundamental difference: instead of just managing errors or distributing wear, this technology aims to *mitigate* the root cause of degradation itself.\n\nFurthermore, the intelligent, condition-based scheduling of the curing operation (only during ready states and after a reference interval) ensures that this proactive maintenance is non-disruptive, a crucial advantage over background processes that might otherwise impact performance. The focus on 'vertical strings' also highlights its tailored approach to the complexities of 3D NAND architectures, which are particularly challenging for older, less sophisticated management techniques.","question":"How is Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices different from prior art?"},{"answer":"Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices is poised to impact a wide array of industries that rely heavily on nonvolatile memory:\n\n1.  **Consumer Electronics:** Smartphones, laptops, tablets, and gaming consoles will benefit from more durable and faster storage, leading to longer product lifespans and improved user experience.\n2.  **Enterprise Data Centers & Cloud Computing:** This is a critical area of impact. Data centers will see significantly reduced hardware failure rates, lower total cost of ownership (TCO) for SSDs, enhanced data integrity, and higher uptime for critical cloud services and applications.\n3.  **Automotive Industry:** Self-driving cars and advanced in-car infotainment systems require extremely reliable and long-lasting memory for critical operations and data logging. This technology can provide the necessary endurance.\n4.  **Industrial IoT (IIoT) & Edge Computing:** Devices deployed in harsh or remote environments, where maintenance is difficult, will benefit from self-healing memory that extends their operational life and ensures continuous data collection.\n5.  **Memory Manufacturing:** Semiconductor companies developing 3D NAND flash will integrate this technology to produce more competitive, higher-endurance memory chips, accelerating the adoption of denser, more cost-effective memory solutions.","question":"What industries will Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices impact?"},{"answer":"The patent Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices (US-9852795) has a filing date of 2016-09-22. This is the date when the patent application was initially submitted to the patent office.\n\nThe publication date for this patent is 2017-12-26. This is the date when the patent was officially published, making its details publicly accessible. While the filing date marks the initiation of the patent process, the publication date indicates when the invention's specifics became part of the public record, allowing others to understand its scope and implications.\n\nThese dates are crucial for understanding the patent's novelty, its position within the technological timeline, and its enforceable period. The relatively recent publication indicates that this is a contemporary innovation with ongoing relevance in the rapidly evolving field of nonvolatile memory.","question":"When was Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices filed/granted?"},{"answer":"The commercial applications of Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices are extensive, primarily focused on enhancing the reliability and lifespan of products using nonvolatile memory:\n\n1.  **High-End SSDs:** Manufacturers can integrate this technology into enterprise and consumer SSDs, offering premium products with significantly higher Terabytes Written (TBW) ratings and extended warranties, appealing to users demanding maximum durability.\n2.  **Data Center Storage Solutions:** Cloud providers and large enterprises can deploy storage arrays and servers equipped with memory benefiting from this patent, leading to lower operational costs, reduced downtime, and improved data integrity for mission-critical applications.\n3.  **Mobile Devices & Wearables:** Smartphones, tablets, and smartwatches can offer more robust and longer-lasting internal storage, improving customer satisfaction and reducing device replacement cycles.\n4.  **Automotive Electronics:** Memory for ADAS (Advanced Driver-Assistance Systems), infotainment, and vehicle black boxes can leverage this technology for enhanced reliability in demanding automotive environments.\n5.  **Industrial and Embedded Systems:** Industrial PCs, network equipment, and IoT devices that require continuous operation and high data retention in challenging conditions can benefit from the self-healing capabilities of this memory, reducing maintenance needs.\n\nUltimately, any product or system reliant on nonvolatile memory for its core function can be enhanced by this patent, leading to more resilient, cost-effective, and higher-performing solutions across various markets.","question":"What are the commercial applications of Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices?"},{"answer":"Future developments stemming from Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices are likely to focus on even more intelligent and adaptive memory management:\n\n1.  **Dynamic Curing Optimization:** Expect advanced firmware that dynamically adjusts curing parameters (e.g., voltage profiles, duration, frequency, reference interval) based on real-time workload analysis, wear-leveling data, and predictive analytics of cell degradation. This would make the curing process even more efficient and tailored.\n2.  **AI/ML Integration:** Machine learning algorithms could be employed to predict which memory blocks or portions are most susceptible to degradation, allowing for highly targeted and proactive curing before any significant performance impact is observed. This would move beyond rule-based triggering to predictive maintenance.\n3.  **Cross-Layer Memory Management:** Integration with higher-level software stacks, such as file systems and operating systems, could enable a more holistic approach to memory health, where system-level operations are coordinated with device-level curing for optimal performance and longevity.\n4.  **Application to Emerging NVMs:** The core principles of proactive, condition-based curing could be extended to other emerging nonvolatile memory technologies beyond 3D NAND, such as MRAM (Magnetoresistive RAM) or ReRAM (Resistive RAM), which also face endurance and retention challenges.\n5.  **Self-Aware and Autonomous Storage:** The long-term vision is for memory systems that are fully self-aware, continuously monitoring their own health, diagnosing issues, and autonomously performing maintenance to ensure optimal performance and maximum lifespan without human intervention, paving the way for truly resilient digital infrastructure.","question":"What are the future developments expected for Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices?"}],"topics":["nonvolatile memory","memory devices","curing operation","3D NAND","memory reliability","technical","background","nonvolatile"],"tech_cluster":null},"seo":{"title":"Nonvolatile Memory Curing - Patent US-9852795","description":"Discover the patent Methods of Operating Nonvolatile Memory Devices, and Memory Systems Including Nonvolatile Memory Devices. Proactive curing operation extends nonvolatile memory lifespan & reliability for 3D NAND.","keywords":["nonvolatile memory","memory devices","curing operation","3D NAND","memory reliability","flash memory","data storage","memory systems","US-9852795","patent","memory endurance","semiconductor"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852795","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852795","citation_suggestion":"Patentable. \"Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices\" (US-9852795). https://patentable.app/patents/US-9852795","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852795","json":"https://patentable.app/api/llm-context/US-9852795","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:37:00.532Z"}