{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852796","patent":{"patent_number":"US-9852796","title":"Nonvolatile memory devices and methods of operating the same","assignee":null,"inventors":[],"filing_date":"2016-09-13T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A nonvolatile memory device includes memory blocks that each include cell strings formed vertically on a substrate. The cell strings are coupled to a plurality of bit-lines. The cell strings each include memory cells connected to a string selection transistor. A method of operating the nonvolatile memory device includes performing an erase operation on a first memory block of the memory blocks in response to an erase command, performing an erase verification operation on the memory cells of the first memory block, performing a first sensing operation on the string selection transistors of each of the cell strings coupled to at least some bit-lines of the first memory block, and determining whether the first memory block is a fail block at least based on a result of the first sensing operation. The first sensing operation is based on a first sensing scheme selected among a plurality of sensing schemes."},"analysis":{"summary":"The patent \"Nonvolatile Memory Devices and Methods of Operating the Same\" introduces a pivotal advancement in the reliability and operational efficiency of nonvolatile memory (NVM) devices, particularly those employing 3D NAND architectures. At its core, the innovation addresses the critical challenge of accurately and efficiently identifying degrading or 'fail' memory blocks, which are common in high-cycle NVM usage.\n\nThe primary problem solved by this patent is the limitation of traditional fail block detection methods. These methods typically rely solely on erase verification of memory cells, which can be insufficient, slow, or prone to false positives, leading to premature retirement of usable blocks or delayed detection of truly failing ones. This inefficiency impacts device longevity, performance, and data integrity.\n\nThis technology's key technical approach is a hybrid sensing mechanism. After performing a standard erase operation and initial erase verification on memory cells, the device executes a novel 'first sensing operation' specifically on the string selection transistors (SSTs) of the cell strings within the memory block. These SSTs are crucial for controlling access to memory cells. The system can select from a plurality of sensing schemes for this operation, allowing for adaptable and optimized detection. The final determination of whether a block is a fail block is then made based on the combined results of both the cell erase verification and the SST sensing operation.\n\nFrom a business perspective, this patent offers substantial value. It leads to extended operational lifespans for NVM devices, such as SSDs and embedded memory in consumer electronics and enterprise storage. This translates to reduced warranty costs for manufacturers, lower total cost of ownership for businesses, and enhanced reliability for end-users. The adaptability of multiple sensing schemes provides a competitive edge, allowing for tailored solutions across diverse memory products and applications.\n\nThe market opportunity is significant, given the pervasive use of nonvolatile memory in virtually all digital devices and data infrastructure. Any innovation that improves NVM reliability, performance, and longevity will be highly sought after in a market driven by ever-increasing data volumes and demands for robust storage solutions. This patent positions itself as a foundational technology for the next generation of resilient and efficient memory systems.","layman_explanation":"## Layman's Explanation: Nonvolatile Memory Devices and Methods of Operating the Same\n\nImagine your digital devices – your smartphone, laptop, or even the cloud servers that power your favorite apps – as having vast libraries of information. This information is stored in 'nonvolatile memory,' which means it stays there even when the power is off, much like books on a shelf. But just like books can get old and pages can tear, these memory storage units, called 'memory blocks,' can wear out over time, especially after being written to and erased repeatedly.\n\n### What Problem Does This Solve?\n\nTraditionally, when a memory block starts to get 'tired' or 'wobbly,' the system tries to find out if it's still reliable. The common way to do this is by checking the main storage units (the 'memory cells') to see if they can properly erase and store new data. The problem is, this check isn't always perfect. Sometimes, a memory block might seem okay on the surface, but deeper structural components are actually weakening. This is like checking if a book's pages are intact, but not noticing that its binding is about to fall apart. If these underlying issues aren't caught early and accurately, it can lead to several problems: your device might slow down, data could be lost, or the entire device might fail prematurely. For businesses, this means higher costs in replacing hardware and potential data integrity risks.\n\n### How Does It Work?\n\nThe patent \"Nonvolatile Memory Devices and Methods of Operating the Same\" introduces a smarter, two-stage inspection process for these memory blocks. Think of it like a comprehensive health check-up for your memory:\n\n1.  **Standard Page Check (Erase Verification):** First, the system still performs the usual check on the main memory cells, confirming they can be properly erased. This is like ensuring the pages of our book are still readable after an update.\n\n2.  **Binding & Structure Check (String Selection Transistor Sensing):** This is the innovative part. Beyond just the pages, the system now also performs a special 'sensing operation' on the 'string selection transistors' (SSTs). Imagine these SSTs as the critical hinges or connectors that allow the book's pages to be accessed. If these hinges are weak or faulty, even if the pages look fine, the book might not open properly or could fall apart soon. The clever aspect here is that the system can use *different types* of 'hinge tests' (a 'plurality of sensing schemes') depending on what it's looking for or how old the memory block is. This adaptability makes the diagnosis much more thorough and precise.\n\nBy combining the results from both the 'page check' and the 'hinge check,' the device can make a much more informed decision about whether a memory block is truly a 'fail block' and needs to be retired, or if it still has plenty of life left. This is like getting a second opinion from a specialist, leading to a much more accurate diagnosis.\n\n### Why Does This Matter?\n\nThis innovation has significant business and operational implications:\n\n*   **Extended Device Lifespan:** Your devices will last longer. For consumers, this means fewer replacements. For businesses, especially those running large data centers, extending the life of hundreds or thousands of solid-state drives (SSDs) translates into massive savings on hardware replacement costs.\n*   **Enhanced Reliability and Data Integrity:** By catching subtle memory issues earlier and more accurately, the risk of data corruption or unexpected device failures is greatly reduced. This is crucial for mission-critical applications where data loss can be catastrophic.\n*   **Improved Performance:** When memory blocks are accurately assessed, the system can avoid using degraded blocks that might slow down operations, ensuring consistent high performance.\n*   **Competitive Edge:** Manufacturers incorporating this technology can offer more reliable and durable products, gaining a significant advantage in a competitive market. It allows for smarter memory management, optimizing the use of available storage capacity.\n*   **Better Return on Investment (ROI):** For businesses, the extended lifespan of memory hardware and reduced data loss incidents directly contribute to a better return on their technology investments.\n\n### What's Next?\n\nThis approach sets a new standard for nonvolatile memory management. We can expect future memory products, from consumer gadgets to enterprise storage arrays, to integrate similar multi-faceted diagnostic techniques. This will lead to an era of even more robust, intelligent, and long-lasting digital storage solutions, underpinning the continued growth of data-intensive technologies like AI, cloud computing, and the Internet of Things. It's a foundational step towards making our digital world more resilient and efficient.","technical_analysis":"The patent \"Nonvolatile Memory Devices and Methods of Operating the Same\" (US-9852796) presents a sophisticated method for enhancing the reliability of nonvolatile memory (NVM) devices, particularly those utilizing 3D NAND flash architectures. This innovation addresses a critical challenge in NVM management: the accurate and efficient identification of degrading memory blocks, often referred to as 'fail blocks'.\n\n**Technical Architecture Overview:**\n\nThe fundamental structure described involves nonvolatile memory devices comprising multiple memory blocks. Each memory block, in turn, contains numerous cell strings formed vertically on a substrate. These cell strings are interconnected with a plurality of bit-lines. A crucial component within each cell string is the string selection transistor (SST), which acts as a switch, connecting the cell string to a bit-line. The memory cells themselves are connected in series within these strings, leading to the SST.\n\n**Problem Statement in Detail:**\n\nExisting methods for detecting fail blocks primarily rely on performing an erase operation followed by an erase verification process on the memory cells. This verification checks if the cells have successfully transitioned to their erased state (e.g., threshold voltage distribution within a specified range). However, this approach has limitations:\n\n1.  **Incomplete Diagnostics:** Cell-level verification might not capture degradation in other critical components, such as the SSTs, which can also impact block functionality and long-term reliability.\n2.  **Ambiguity and False Positives/Negatives:** The pass/fail criteria for cell-level verification can be overly stringent, leading to premature retirement of blocks, or too lenient, allowing marginally faulty blocks to remain in service, risking data integrity.\n3.  **Performance Overhead:** Extensive cell-level verification across an entire block can be time-consuming, affecting overall memory performance.\n\n**Implementation Details and Algorithm Specifics:**\n\nThe core innovation of this patent lies in augmenting the traditional erase verification process with an additional, specialized sensing operation. The method of operating the nonvolatile memory device includes the following sequence of operations:\n\n1.  **Erase Command Reception:** The memory controller receives an erase command targeting a specific 'first memory block'.\n2.  **Erase Operation:** A standard erase operation is performed on the memory cells within the first memory block.\n3.  **Erase Verification:** An erase verification operation is then performed on the memory cells of the first memory block. This step confirms whether the cells have reached the desired erased state.\n4.  **First Sensing Operation on SSTs:** This is the distinguishing feature. A dedicated sensing operation is performed on the string selection transistors (SSTs) of each of the cell strings. This operation specifically targets SSTs coupled to at least some of the bit-lines within the first memory block. The patent explicitly states that this 'first sensing operation is based on a first sensing scheme selected among a plurality of sensing schemes.' This implies a dynamic or configurable diagnostic approach. Different sensing schemes could involve varying read voltages, pulse durations, or current measurement techniques tailored to detect specific types of SST degradation (e.g., shifts in threshold voltage, increased leakage currents).\n5.  **Fail Block Determination:** Finally, the memory controller determines whether the first memory block is a fail block. Crucially, this determination is made *at least based on a result of the first sensing operation* (on the SSTs), in addition to the result of the erase verification on the memory cells. This multi-criteria evaluation leads to a more robust and accurate assessment of block health.\n\n**Integration Patterns and Performance Characteristics:**\n\nIntegrating this method would involve modifications to the memory controller's firmware and potentially minor adjustments to the memory array's peripheral circuitry to support the diverse SST sensing schemes. The 'plurality of sensing schemes' suggests a lookup table or a state machine within the controller that selects the appropriate scheme based on factors like block age (P/E cycles), temperature, or historical performance data. This adaptive sensing could optimize the trade-off between detection accuracy and sensing time.\n\nPerformance-wise, while adding an extra sensing step might introduce a slight overhead, the benefits of more accurate fail block detection outweigh this. By preventing the use of marginally faulty blocks or extending the life of healthy ones, the overall effective throughput and write endurance of the NVM device can be significantly improved. Early detection of SST degradation could also prevent catastrophic failures, thus improving system reliability and data integrity.\n\n**Code-level Implications:**\n\nFirmware for the memory controller would need to be updated to implement the SST sensing algorithms. This would involve:\n\n*   Functions for triggering various SST sensing schemes.\n*   Logic for interpreting the electrical responses from SSTs (e.g., current sensing, voltage threshold detection).\n*   An enhanced fail block management module that combines results from both cell verification and SST sensing to make a final decision.\n*   Potentially, machine learning models could be employed to dynamically select the optimal sensing scheme and refine fail block prediction based on accumulated data.\n\nThis technical approach represents a significant step towards more intelligent and resilient nonvolatile memory systems, paving the way for improved data storage solutions.","business_analysis":"The patent \"Nonvolatile Memory Devices and Methods of Operating the Same\" introduces a pivotal innovation with substantial business implications for the nonvolatile memory (NVM) market. As the digital economy continues its explosive growth, the demand for reliable, high-performance, and cost-effective data storage solutions is insatiable. This invention directly addresses critical pain points in NVM reliability and operational efficiency, positioning it for significant market impact.\n\n**Market Opportunity Size:**\n\nThe global nonvolatile memory market is vast and rapidly expanding, driven by data centers, AI, IoT, mobile devices, and automotive applications. Valued at hundreds of billions of dollars annually, even a marginal improvement in NVM reliability and lifespan can translate into billions in saved costs and increased value. This patent targets the core functionality of NVM, particularly 3D NAND flash, which dominates many segments. The opportunity is therefore not just in a niche, but in enhancing a fundamental component across the entire digital infrastructure.\n\n**Competitive Advantages:**\n\nThis patent provides a distinct competitive advantage for manufacturers and system integrators who adopt its principles:\n\n1.  **Superior Product Reliability:** By more accurately identifying and managing failing memory blocks, devices incorporating this technology will inherently be more reliable and durable. This leads to reduced warranty claims, enhanced brand reputation, and improved customer satisfaction.\n2.  **Extended Product Lifespan:** Longer-lasting NVM devices translate to lower total cost of ownership (TCO) for enterprise customers (e.g., data centers) and greater perceived value for consumers. This can be a key differentiator in a crowded market.\n3.  **Optimized Resource Utilization:** The ability to prevent premature retirement of functional memory blocks, or conversely, to quickly identify and isolate truly failing ones, ensures that memory resources are utilized optimally, improving effective capacity and performance.\n4.  **Adaptive Technology:** The provision for a 'plurality of sensing schemes' offers flexibility. Manufacturers can tailor detection methods to specific NVM types, process variations, or application requirements, enabling a more versatile and future-proof solution compared to static prior art methods.\n\n**Revenue Potential:**\n\nRevenue potential can be realized through several avenues:\n\n*   **Licensing:** Memory IP holders can license this patented technology to NVM manufacturers (e.g., Samsung, Micron, Kioxia, SK Hynix).\n*   **Product Differentiation:** Companies integrating this technology into their SSDs, eMMCs, or other NVM products can command premium pricing or gain market share due to superior reliability metrics.\n*   **Reduced Costs:** For NVM manufacturers, the reduction in warranty expenses, field returns, and customer support related to memory failures directly improves profit margins.\n\n**Business Models:**\n\n*   **IP Licensing Model:** Traditional patent licensing to major NVM producers.\n*   **Embedded Solutions:** Offering integrated memory controller IP blocks or firmware solutions that incorporate this method.\n*   **Value-Added Products:** SSD or memory module manufacturers can market their products with 'Enhanced Reliability powered by US-9852796 technology' as a key selling point.\n\n**Strategic Positioning:**\n\nThis invention positions its adopters as leaders in NVM reliability and intelligent memory management. In a market where performance is often bottlenecked by storage, and data integrity is paramount, innovations that extend the useful life and predictable operation of memory are strategically vital. It enables companies to offer more robust solutions for demanding applications like AI/ML, cloud computing, and edge devices where consistent performance and minimal downtime are critical.\n\n**ROI Projections:**\n\nWhile specific ROI depends on implementation and market penetration, the benefits are clear. A reduction in warranty costs by even a few percentage points across billions of dollars in NVM sales would yield substantial returns. For data center operators, extending the lifespan of SSDs by even 10-20% can result in millions of dollars in CapEx savings, making solutions incorporating this patent highly attractive. The investment in adopting this technology promises significant returns through improved product quality, reduced operational expenses, and enhanced market competitiveness.","faqs":[{"answer":"The patent \"Nonvolatile Memory Devices and Methods of Operating the Same\" (US-9852796) describes a groundbreaking invention focused on enhancing the reliability and operational efficiency of nonvolatile memory (NVM) devices. Specifically, it details a novel method for more accurately identifying 'fail blocks' – memory sections that are degrading due to repeated use. This innovation is particularly relevant for modern 3D NAND flash architectures, which are prevalent in SSDs, smartphones, and data centers.\n\nTraditional methods for detecting these fail blocks often rely solely on verifying the state of memory cells after an erase operation. However, this patent introduces an additional, crucial step: performing a specialized sensing operation on the string selection transistors (SSTs) within the memory block. By combining the results from both cell verification and SST sensing, the system can make a more informed and precise determination of a block's health.\n\nThis multi-faceted approach aims to extend the lifespan of NVM devices, improve data integrity, and optimize memory resource utilization. It represents a significant advancement in memory management, addressing a long-standing challenge in the semiconductor industry.","question":"What is Nonvolatile Memory Devices and Methods of Operating the Same?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent introduces a hybrid diagnostic process. When a memory block needs to be erased, the system follows a series of steps:\n\nFirst, it performs a standard erase operation on the memory cells within the block, followed by an erase verification step. This traditional check confirms if the memory cells have successfully reached their erased state.\n\nSecond, and this is the core innovation, the system then executes a 'first sensing operation' specifically on the string selection transistors (SSTs) of the cell strings in that block. SSTs are critical components that control the connection of cell strings to bit-lines. The patent allows for this sensing operation to be based on a 'plurality of sensing schemes,' meaning the system can choose from different types of tests to assess the SSTs' health, adapting to various conditions or degradation types.\n\nFinally, the determination of whether the memory block is a 'fail block' is made by combining the results from both the initial memory cell erase verification and the specialized SST sensing operation. This composite evaluation provides a much more accurate and robust assessment of the block's overall health, leading to better management decisions.","question":"How does Nonvolatile Memory Devices and Methods of Operating the Same work?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent primarily solves the problem of inefficient and incomplete 'fail block' detection in nonvolatile memory (NVM) devices. In NVM, especially 3D NAND flash, memory blocks degrade over time due to repeated erase/program cycles. Accurately identifying these failing blocks is crucial but challenging.\n\nPrior art methods, which typically focused only on verifying memory cell states after an erase operation, had several shortcomings. They could be prone to false positives (prematurely retiring usable blocks) or false negatives (failing to detect subtle degradation), leading to reduced device lifespan, compromised data integrity, and inefficient memory utilization. This patent addresses these issues by introducing a more comprehensive diagnostic approach that considers the health of not just the memory cells, but also critical peripheral components like string selection transistors, thereby improving the accuracy and effectiveness of fail block identification.","question":"What problem does Nonvolatile Memory Devices and Methods of Operating the Same solve?"},{"answer":"The patent filing US-9852796 for \"Nonvolatile Memory Devices and Methods of Operating the Same\" does not list the inventors or assignee in the provided abstract data. However, patents are typically filed by companies (assignees) and credit specific individuals (inventors) who conceived the invention. To find the exact inventors and assignee, one would need to consult the full patent document available through patent databases like the USPTO or Google Patents.\n\nGenerally, such complex memory innovations emerge from research and development teams within leading semiconductor manufacturers or specialized memory technology companies. These teams comprise experts in materials science, electrical engineering, and computer architecture, working to push the boundaries of storage technology.","question":"Who invented Nonvolatile Memory Devices and Methods of Operating the Same?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent offers several significant benefits:\n\n1.  **Extended Device Lifespan:** By more accurately identifying and managing degrading memory blocks, the technology helps prolong the operational life of nonvolatile memory devices, reducing the need for premature replacements.\n2.  **Enhanced Reliability and Data Integrity:** The hybrid sensing approach provides a more robust assessment of memory health, significantly reducing the risk of data corruption or unexpected device failures.\n3.  **Optimized Memory Utilization:** The system avoids prematurely retiring usable memory blocks, ensuring that valuable storage capacity is utilized efficiently.\n4.  **Improved Performance:** By keeping truly healthy blocks in service and quickly identifying problematic ones, the device can maintain more consistent and higher performance over time.\n5.  **Adaptive Diagnostics:** The ability to select from a 'plurality of sensing schemes' allows for tailored and optimized fail block detection, adapting to different memory technologies, usage patterns, or degradation types. These benefits collectively lead to better user experience and lower total cost of ownership for both consumers and enterprises.","question":"What are the key benefits of Nonvolatile Memory Devices and Methods of Operating the Same?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent distinguishes itself from prior art primarily through its comprehensive and adaptive fail block detection methodology. Prior art largely focused on a single-point verification: performing an erase operation and then verifying the state of the memory cells.\n\nThis patent's key differentiator is the addition of a specialized 'first sensing operation' on the string selection transistors (SSTs) of the memory blocks. Prior art methods often overlooked or did not sufficiently address the degradation of these critical control components, which can impact overall block reliability even if memory cells appear healthy. Furthermore, this invention introduces the flexibility of choosing from a 'plurality of sensing schemes' for the SST sensing, a level of adaptability rarely seen in conventional approaches. By combining cell verification with adaptive SST sensing, the Nonvolatile Memory Devices and Methods of Operating the Same provides a more accurate, holistic, and proactive diagnostic capability, surpassing the limitations of previous methods.","question":"How is Nonvolatile Memory Devices and Methods of Operating the Same different from prior art?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent has the potential to impact a wide range of industries that rely heavily on robust and reliable data storage. These include:\n\n1.  **Consumer Electronics:** Smartphones, tablets, laptops, and other personal devices will benefit from longer-lasting and more reliable flash storage, leading to improved user experience and reduced warranty claims for manufacturers.\n2.  **Enterprise and Cloud Computing:** Data centers and cloud service providers, which utilize vast arrays of SSDs, will see significant advantages through extended hardware lifespans, reduced operational costs, and enhanced data integrity for mission-critical applications.\n3.  **Automotive:** With the rise of autonomous vehicles and advanced driver-assistance systems (ADAS), reliable nonvolatile memory is essential for storing critical software and sensor data. This patent can contribute to the safety and longevity of in-car storage.\n4.  **Internet of Things (IoT) and Edge Computing:** IoT devices often operate in harsh or remote environments with limited maintenance. More resilient memory, as enabled by this technology, is crucial for their long-term performance and autonomy.\n5.  **Industrial and Embedded Systems:** Industrial control systems, medical devices, and other embedded applications require extremely reliable memory for continuous operation. This innovation can enhance the robustness of such systems.","question":"What industries will Nonvolatile Memory Devices and Methods of Operating the Same impact?"},{"answer":"The patent for \"Nonvolatile Memory Devices and Methods of Operating the Same\" (US-9852796) was filed on **September 13, 2016**. It was subsequently published on **December 26, 2017**.\n\nThe filing date marks when the application was initially submitted to the patent office, establishing the priority date for the invention. The publication date is when the patent application (or granted patent, in this case) becomes publicly accessible. These dates are important for understanding the timeline of the invention's development and its position within the broader landscape of memory technology innovation.","question":"When was Nonvolatile Memory Devices and Methods of Operating the Same filed/granted?"},{"answer":"The commercial applications of the Nonvolatile Memory Devices and Methods of Operating the Same patent are extensive, primarily focused on improving the quality and longevity of products incorporating nonvolatile memory:\n\n1.  **Solid State Drives (SSDs):** Manufacturers can integrate this technology into consumer and enterprise SSDs to offer products with superior endurance, extended warranty periods, and higher sustained performance, appealing to both general users and data center operators.\n2.  **Embedded Flash Storage:** In smartphones, tablets, smart TVs, and other consumer electronics, this innovation can lead to more reliable embedded multi-media cards (eMMCs) and Universal Flash Storage (UFS) solutions, reducing device failures and improving user satisfaction.\n3.  **Industrial and Automotive Memory:** For applications requiring extreme reliability and long-term operation, such as industrial automation, automotive infotainment, and ADAS, this patent can enable more robust memory components that withstand demanding conditions.\n4.  **Memory Controllers and Firmware:** The technology can be licensed to companies that develop memory controllers or firmware, allowing them to offer enhanced solutions to NVM manufacturers. This creates an opportunity for IP licensing and value-added software/firmware products.\n5.  **Cloud Infrastructure:** Cloud service providers can indirectly benefit by procuring NVM hardware that incorporates this patent, leading to more stable infrastructure, reduced maintenance, and lower total cost of ownership for their vast storage networks.","question":"What are the commercial applications of Nonvolatile Memory Devices and Methods of Operating the Same?"},{"answer":"The Nonvolatile Memory Devices and Methods of Operating the Same patent lays a strong foundation for future advancements in nonvolatile memory reliability. Expected future developments could include:\n\n1.  **AI and Machine Learning Integration:** The 'plurality of sensing schemes' provides rich diagnostic data. Future systems could leverage AI and machine learning algorithms to dynamically select the optimal sensing scheme, predict failures with even greater accuracy, and adapt memory operations (e.g., wear-leveling, error correction) in real-time to maximize endurance.\n2.  **More Granular Sensing:** As NVM architectures continue to evolve, there might be developments towards even more granular and localized SST sensing, allowing for pinpoint accuracy in identifying degradation within smaller sub-blocks or even individual cell strings.\n3.  **Proactive Data Migration:** With more precise and predictive fail block detection, memory systems could implement highly proactive data migration strategies, moving data from subtly degrading blocks *before* any actual data loss occurs, enhancing overall data retention.\n4.  **Standardization of Advanced Diagnostics:** As this type of hybrid sensing proves its value, the industry might move towards standardizing such advanced diagnostic capabilities in NVM specifications, making robust reliability a baseline expectation.\n5.  **Cross-Layer Optimization:** Integration of memory health data from SST sensing into higher-level software layers (e.g., operating systems, file systems) could enable system-wide optimization for storage performance and reliability, creating a more cohesive and intelligent computing environment. These advancements will continue to push the boundaries of memory performance and longevity.","question":"What are the future developments expected for Nonvolatile Memory Devices and Methods of Operating the Same?"}],"topics":["nonvolatile memory devices","memory reliability","erase operations","string selection transistor","fail block detection","relentless","evolution","nonvolatile"],"tech_cluster":null},"seo":{"title":"Nonvolatile Memory Devices and Methods of Operating the Same - Patent US-9852796","description":"Discover how the Nonvolatile Memory Devices and Methods of Operating the Same patent revolutionizes memory reliability with hybrid SST sensing. Extended device lifespans and enhanced data integrity.","keywords":["nonvolatile memory devices","memory reliability","erase operations","string selection transistor","fail block detection","NAND flash","memory management","patent US-9852796","data storage innovation","semiconductor memory"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852796","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852796","citation_suggestion":"Patentable. \"Nonvolatile memory devices and methods of operating the same\" (US-9852796). https://patentable.app/patents/US-9852796","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852796","json":"https://patentable.app/api/llm-context/US-9852796","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:36.457Z"}