{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852797","patent":{"patent_number":"US-9852797","title":"Nonvolatile semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2017-07-13T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","H02J","G11C","G11C","G11C","G11C","G11C","H02J"],"num_claims":10,"abstract":"When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block."},"analysis":{"summary":"The Nonvolatile Semiconductor Memory Device patent introduces a groundbreaking method for precise and undisturbed selective erasure of sub-blocks within nonvolatile memory devices. This innovation addresses the critical problem of 'erase disturb,' where traditional methods of deleting data in one section can inadvertently affect adjacent, unselected memory regions, leading to data corruption, performance degradation, and reduced device lifespan.\n\nAt its core, the invention details a sophisticated control circuit that meticulously manages voltage application during an erase operation. When a specific sub-block is targeted for erasure, the circuit applies a distinct set of voltages: a first voltage to bit lines and a source line, a second (smaller) voltage to word lines, and a third (even lower) voltage to the drain-side and source-side select gate lines of the selected sub-block. This precise voltage profile ensures that the erase operation is confined exclusively to the intended area.\n\nCrucially, for all other unselected sub-blocks within the same memory block, the patent specifies that a fourth voltage, substantially identical to the first voltage, is applied to their select gate lines. This strategic application actively prevents any erase operation from occurring in these unselected regions, thereby safeguarding data integrity and preventing unintended data modification. This differential voltage control represents a significant technical leap.\n\nFrom a business perspective, this technology offers substantial value. It enables the development of nonvolatile memory products with enhanced reliability, faster erase/write speeds, and extended operational lifespans. This translates to competitive advantages for manufacturers, improved user experience for consumers through more robust and responsive devices, and reduced operational costs for enterprise storage solutions. The market opportunity lies in high-performance SSDs, mobile devices, and embedded systems where data integrity and efficiency are paramount. This patent positions its implementers to lead in the evolving landscape of advanced memory technology.","layman_explanation":"### 1. What Problem Does This Solve?\nImagine a massive digital library where books (data) are stored in individual shelves (memory sub-blocks). When you want to remove a specific book from one shelf, the challenge is to do it quickly and efficiently without accidentally shaking the entire bookshelf and causing other books to fall off their shelves or get damaged. In the world of nonvolatile memory – the kind that holds data even when power is off, like in your phone or SSD – this 'shaking' is a real problem called 'erase disturb.' When you try to erase data from one small section, the electrical signals can sometimes mess up data in adjacent sections, leading to corrupted files, slower performance, and even a shorter lifespan for your device. Existing solutions often involve compromises: either slower, more cautious erase processes, or complex error correction that adds overhead.\n\n### 2. How Does It Work?\nThe Nonvolatile Semiconductor Memory Device patent introduces a clever, almost surgical, way to perform these erase operations. Think of it like this: when you want to clear a specific shelf (a 'first sub-block'), the system doesn't just blast it with a generic 'erase' signal. Instead, it precisely applies different types of 'energy fields' (electrical voltages) to various parts of that shelf. It applies one type of energy to the 'floor' and 'back' of the shelf, a slightly different one to the 'top,' and a very specific, lower energy to the 'side supports.' This combination creates a highly localized cleaning zone, ensuring only the target shelf is affected.\n\nCrucially, for all the other shelves in that same bookcase (the 'second sub-blocks') that you *don't* want to touch, the system applies a different, protective energy to their 'side supports.' This protective energy acts like a strong, invisible barrier, ensuring that no matter what's happening on the cleaning shelf, the adjacent shelves and their books remain completely undisturbed. It's about precision and isolation, making sure the cleaning is confined exactly where it's needed.\n\n### 3. Why Does This Matter?\nThis innovation matters significantly for both consumers and businesses. For consumers, it means devices with nonvolatile memory (smartphones, laptops, digital cameras) will be more reliable, faster, and last longer. You'll experience fewer corrupted files, quicker app loading, and overall smoother performance. For businesses, especially those in data centers or cloud computing, this translates into massive operational benefits. Higher data integrity means less downtime due to data errors, reduced need for extensive error correction, and more efficient storage utilization. This can lead to substantial cost savings and a competitive edge in delivering robust data services. It also opens doors for developing even higher-density memory solutions without compromising reliability, which is critical as the world generates ever-increasing amounts of data.\n\n### 4. What's Next?\nThis patent lays a foundational block for the next generation of nonvolatile memory technologies. We can expect to see this precise erase capability integrated into future solid-state drives (SSDs), embedded memory for AI accelerators, and IoT devices. It could enable new advancements in 3D NAND flash, where managing cell-to-cell interference is a major challenge. Investment opportunities could arise in companies specializing in memory controller IP, advanced manufacturing processes, or those developing high-reliability storage solutions for critical infrastructure. The widespread adoption of this technology will likely accelerate the development of even more powerful and resilient digital storage solutions across various industries.","technical_analysis":"The Nonvolatile Semiconductor Memory Device (US-9852797) patent presents a significant advancement in the granular control of erase operations within nonvolatile semiconductor memory. The core technical problem it addresses is the 'erase disturb' phenomenon, where the high electric fields required for erasing a selected memory sub-block can inadvertently alter the charge states (threshold voltages) of cells in adjacent, unselected sub-blocks. This leads to data corruption, necessitates complex error correction schemes, and degrades the overall reliability and longevity of the memory device.\n\n**Technical Architecture and Operational Flow:**\nThe invention centers around a sophisticated control circuit designed to precisely manage voltage potentials across various lines within a memory block during a selective sub-block erase operation. A typical memory block is composed of multiple sub-blocks, each containing numerous memory cells (e.g., floating-gate or charge-trap transistors) arranged with word lines (WLs), bit lines (BLs), and source lines (SLs), flanked by drain-side select gate lines (SGDs) and source-side select gate lines (SGSs).\n\n**Algorithm Specifics and Implementation Details:**\nWhen a 'first sub-block' is designated for erasure, the control circuit executes a multi-stage voltage application sequence:\n1.  **Bit Line and Source Line Biasing:** A 'first voltage' is applied to the bit lines and the source line of the selected sub-block. This voltage level is typically intermediate or high, serving as a reference or contributing to the potential difference required for electron tunneling during erasure.\n2.  **Word Line Biasing:** Concurrently, a 'second voltage,' which is *smaller* than the first voltage, is applied to the word lines of the selected sub-block. This differential between the word line and the channel (influenced by bit/source lines) helps to establish the electric field across the tunnel oxide for electron removal from the floating gate.\n3.  **Select Gate Line Biasing (Selected Sub-block):** Crucially, a 'third voltage,' which is *lower than the first voltage by a certain value*, is applied to both the drain-side select gate line and the source-side select gate line of the selected sub-block. This low bias on the select gates effectively 'opens' the access transistors, allowing the erase field to properly develop across the memory cells within the target sub-block. The precise value of this third voltage is critical for optimal erase efficiency and minimizing lateral field spread.\n\n**Protection of Unselected Sub-blocks:**\nThe innovation's robustness is further highlighted by its handling of 'second sub-blocks' (unselected sub-blocks) residing in the same memory block. To *prevent* any erase operation in these unselected areas:\n1.  **Select Gate Line Biasing (Unselected Sub-blocks):** A 'fourth voltage,' which is *substantially identical to the first voltage* (applied to the BLs and SLs of the selected sub-block), is applied to the drain-side select gate line and the source-side select gate line of these second sub-blocks. By applying a high voltage to the select gates of unselected sub-blocks, their access transistors are effectively 'closed' or kept in an 'off' state, preventing the erase voltage applied to the common word lines or source lines from impacting their memory cells. This creates a strong isolation barrier, actively suppressing any erase disturb.\n\n**Performance Characteristics and Integration Patterns:**\nThis method leads to several performance enhancements:\n*   **Improved Erase Uniformity:** By precisely controlling the erase field, the distribution of erased threshold voltages becomes tighter, improving memory cell reliability and simplifying error correction.\n*   **Reduced Erase Time:** More efficient electron removal due to optimized electric fields can lead to faster erase operations.\n*   **Enhanced Endurance:** Lower stress on unselected cells means fewer unintended program/erase cycles, extending the overall endurance of the memory device.\n*   **Lower Power Consumption:** Targeted erase operations can reduce the overall energy required compared to less precise, broader erase schemes.\n\nIntegration of this technology would involve modifications to the memory controller's firmware and the physical layout of the memory array's peripheral circuits (e.g., voltage generators, row/column decoders) to implement the described voltage biasing schemes. This patent provides a foundational approach for designing more reliable and high-performance nonvolatile memory, particularly beneficial for multi-level cell (MLC) and triple-level cell (TLC) NAND flash, where cell-to-cell interference is a significant concern.","business_analysis":"The Nonvolatile Semiconductor Memory Device patent (US-9852797) presents a compelling business opportunity by addressing fundamental reliability and performance bottlenecks in nonvolatile memory. This innovation is poised to significantly impact markets reliant on efficient and robust data storage, from consumer electronics to high-performance enterprise solutions.\n\n**Market Opportunity Size:**\nThe global nonvolatile memory market is projected to reach hundreds of billions of dollars in the coming years, driven by the explosive growth of data, AI, IoT, and cloud computing. Within this, NAND flash, a primary beneficiary of this patent, dominates a significant segment. Any technology that can enhance the core performance and reliability of these devices taps into a massive and continually expanding market. This invention specifically targets the pain points of 'erase disturb' and efficiency, which are universal challenges across all nonvolatile memory applications, making its potential reach incredibly broad.\n\n**Competitive Advantages:**\nCompanies that implement this technology will gain several distinct competitive advantages:\n1.  **Superior Product Performance:** Devices featuring this patent will offer faster, more reliable erase operations, translating to quicker data writes and overall system responsiveness. This is a crucial differentiator in competitive markets like SSDs and mobile devices.\n2.  **Enhanced Data Integrity:** By virtually eliminating erase disturb, products can boast higher data reliability, reducing the need for complex error correction schemes and improving user trust. This is invaluable in enterprise storage, medical devices, and automotive applications where data loss is catastrophic.\n3.  **Extended Device Lifespan:** Reduced stress on memory cells during erasure contributes to greater endurance. Longer-lasting devices mean lower total cost of ownership for consumers and enterprises, offering a significant value proposition.\n4.  **Cost Efficiency:** While requiring initial design changes, the long-term benefits of higher yields (due to fewer defects from erase disturb) and reduced warranty claims can lead to substantial cost savings for manufacturers.\n\n**Revenue Potential and Business Models:**\nRevenue potential for this technology is high. It can be licensed to leading semiconductor manufacturers (e.g., Samsung, Micron, SK Hynix, Kioxia) for integration into their next-generation NAND flash and other nonvolatile memory products. Alternatively, a company holding this patent could develop its own specialized memory controllers or IP blocks for sale to memory module manufacturers. The patent could also underpin the creation of new, premium-tier memory products marketed on their superior reliability and performance characteristics. The business model could involve: \n*   **Licensing Fees:** Royalties per unit or lump-sum licensing agreements. \n*   **IP Sales:** Selling specific circuit designs or controller IP. \n*   **Product Differentiation:** Manufacturing and selling memory products that leverage this unique erase technology as a key selling point.\n\n**Strategic Positioning:**\nThis patent allows a company to strategically position itself as a leader in advanced memory technology, particularly in areas demanding high data integrity and performance. It's a foundational technology that can unlock new possibilities in high-density 3D NAND, QLC flash, and emerging nonvolatile memory types. By solving a core technical challenge, it strengthens a company's intellectual property portfolio and provides leverage in strategic partnerships and market negotiations.\n\n**ROI Projections:**\nInvestment in developing and commercializing this technology would likely yield significant ROI due to its broad applicability and the substantial value it adds to memory products. Reduced R&D cycles for mitigating erase disturb, lower manufacturing defect rates, and the ability to command premium pricing for superior products would drive profitability. Given the scale of the nonvolatile memory market, even a small market share gain or royalty percentage could generate substantial returns, making this a highly attractive intellectual asset.","faqs":[{"answer":"The Nonvolatile Semiconductor Memory Device (US-9852797) is a patented invention detailing a novel method for selectively erasing data within specific sub-blocks of a nonvolatile memory device. This technology addresses a critical challenge in modern memory systems: performing precise erase operations without inadvertently affecting adjacent memory regions.\n\nAt its core, the invention introduces a sophisticated control circuit that meticulously manages the application of different voltage levels to various components of the memory array during an erase cycle. This includes bit lines, source lines, word lines, and crucially, the drain-side and source-side select gate lines.\n\nThe primary goal of this innovation is to enhance data integrity and memory performance by ensuring that erase operations are confined exclusively to the intended sub-block, thereby preventing 'erase disturb' in unselected areas. It represents a significant step forward in making nonvolatile memory more reliable and efficient.\n\nKeywords: nonvolatile memory, semiconductor device, memory erasure, data integrity, patent US-9852797","question":"What is Nonvolatile Semiconductor Memory Device?"},{"answer":"The Nonvolatile Semiconductor Memory Device operates by employing a multi-stage, differential voltage application strategy that precisely isolates the target memory sub-block during an erase operation.\n\nWhen a 'first sub-block' is selected for erasure, a control circuit applies a 'first voltage' to its bit lines and source line, and a 'second voltage' (smaller than the first) to its word lines. Simultaneously, a 'third voltage' (lower than the first) is applied to the drain-side and source-side select gate lines of this selected sub-block. This specific combination of voltages creates the optimal electrical conditions to efficiently remove electrons from the memory cells of the target sub-block, performing the erase operation.\n\nCrucially, for all other 'second sub-blocks' within the same memory block that are *not* selected for erasure, the control circuit applies a 'fourth voltage' (substantially identical to the first voltage) to their drain-side and source-side select gate lines. This high voltage effectively 'shuts off' the access transistors of these unselected sub-blocks, creating an electrical barrier that prevents any erase operation from affecting them. This intelligent, active isolation ensures data integrity and prevents unintended changes in unselected memory regions.\n\nKeywords: memory operation, voltage control, sub-block erase, control circuit, data protection, nonvolatile memory mechanism","question":"How does Nonvolatile Semiconductor Memory Device work?"},{"answer":"The Nonvolatile Semiconductor Memory Device primarily solves the problem of 'erase disturb' in nonvolatile memory devices. Erase disturb occurs when the high voltages required to erase data from a specific memory sub-block inadvertently affect the data stored in adjacent, unselected sub-blocks. This can lead to several critical issues.\n\nFirstly, it can cause data corruption in unselected areas, compromising data integrity and requiring complex Error Correction Codes (ECC) to recover or prevent data loss. Secondly, it can degrade the overall performance of the memory device, as mitigation strategies for erase disturb often introduce latency or require more time-consuming erase cycles. Lastly, the unintended electrical stress on unselected memory cells can accelerate their wear-out, thereby reducing the overall endurance and lifespan of the memory device.\n\nBy providing a precise and isolated erase mechanism, the Nonvolatile Semiconductor Memory Device eliminates these problems, leading to more reliable, faster, and longer-lasting memory solutions.\n\nKeywords: erase disturb, data corruption, memory performance, device lifespan, data integrity issues, nonvolatile memory problems","question":"What problem does Nonvolatile Semiconductor Memory Device solve?"},{"answer":"The patent data provided does not list the inventors or the assignee. In many patent filings, especially those from large corporations, the inventors are individuals, but the patent rights are assigned to a company. The assignee, in this case, would be the entity that owns the patent (e.g., a semiconductor manufacturer).\n\nWhile the specific individuals who conceptualized and developed the Nonvolatile Semiconductor Memory Device are not provided here, the innovation itself is a testament to the collaborative efforts typically found within advanced research and development teams in the semiconductor industry. Such inventions are often the result of extensive research, experimentation, and engineering expertise aimed at overcoming persistent technical challenges in memory design.\n\nKeywords: patent inventors, assignee, semiconductor industry, memory R&D, intellectual property, innovation source","question":"Who invented Nonvolatile Semiconductor Memory Device?"},{"answer":"The Nonvolatile Semiconductor Memory Device offers several compelling benefits that significantly enhance the performance and reliability of nonvolatile memory systems.\n\nFirstly, it provides **unprecedented erase precision**, ensuring that only the intended data within a selected sub-block is erased, completely eliminating accidental disturbances to adjacent data. This leads to **superior data integrity**, drastically reducing the risk of data corruption and the need for extensive error correction. Secondly, by streamlining the erase process and preventing unintended side effects, the technology contributes to **boosted memory performance**, resulting in faster write/erase speeds and improved overall system responsiveness. Finally, the reduction of stress on unselected memory cells directly translates to an **extended device lifespan**, offering greater endurance and reliability over time.\n\nThese benefits collectively make the Nonvolatile Semiconductor Memory Device a foundational improvement for next-generation memory products, from consumer electronics to enterprise storage.\n\nKeywords: memory benefits, precision erase, data integrity, enhanced performance, extended lifespan, nonvolatile memory advantages","question":"What are the key benefits of Nonvolatile Semiconductor Memory Device?"},{"answer":"The Nonvolatile Semiconductor Memory Device significantly differentiates itself from prior art by implementing an active and highly precise differential voltage control scheme for sub-block erasure, rather than relying on more generalized or passive mitigation strategies.\n\nPrior art often struggled with 'erase disturb' due to a lack of precise isolation during erase operations, leading to unintended changes in unselected memory cells. Solutions typically involved complex error correction codes or slower erase cycles to compensate for this inherent imprecision. In contrast, this invention actively prevents erase disturb at its source.\n\nIts key distinction lies in applying specific low voltages to the select gate lines of the *selected* sub-block to channel the erase field, while simultaneously applying high, protective voltages to the select gate lines of *unselected* sub-blocks to create an active electrical barrier. This dual, differential approach ensures surgical precision and robust protection, a level of control that surpasses many previous methods in terms of data integrity, performance, and device longevity.\n\nKeywords: prior art comparison, memory technology differentiation, erase disturb prevention, active isolation, voltage control innovation, nonvolatile memory advancements","question":"How is Nonvolatile Semiconductor Memory Device different from prior art?"},{"answer":"The Nonvolatile Semiconductor Memory Device is poised to have a transformative impact across a wide array of industries that rely heavily on robust and efficient data storage.\n\n**Consumer Electronics:** Devices like smartphones, tablets, laptops, and digital cameras will benefit from faster performance, greater reliability, and extended battery life due to more efficient memory operations. **Enterprise Storage & Cloud Computing:** Data centers will see improved SSD performance, higher data integrity for critical business applications, and reduced total cost of ownership through longer-lasting storage. **Automotive:** Autonomous vehicles and advanced driver-assistance systems (ADAS) require extremely reliable memory for real-time data processing and map storage, making this technology crucial.\n\nFurthermore, **AI & Machine Learning:** Accelerators and edge computing devices will leverage this precision for robust storage of models and data. **Industrial IoT:** Devices operating in harsh environments will gain from the enhanced endurance and reliability. In essence, any sector demanding high-performance, high-reliability, and long-lifespan nonvolatile memory will be positively impacted by the Nonvolatile Semiconductor Memory Device.\n\nKeywords: industry impact, consumer electronics, enterprise storage, cloud computing, automotive industry, AI memory, IoT devices, data-intensive industries","question":"What industries will Nonvolatile Semiconductor Memory Device impact?"},{"answer":"The Nonvolatile Semiconductor Memory Device patent, identified as US-9852797, has a specific timeline regarding its filing and publication dates.\n\nThe **Filing Date** for this patent was **2017-07-13**. This is the date when the patent application was officially submitted to the patent office. The **Publication Date** was **2017-12-26**. This is the date when the patent document was made publicly available.\n\nThese dates are important for understanding the patent's novelty, its position relative to other inventions (prior art), and its legal lifespan. The period between filing and publication allows for examination by patent authorities and ensures that the invention eventually enters the public domain for review and further innovation.\n\nKeywords: patent filing date, publication date, patent timeline, US-9852797, patent lifecycle, intellectual property dates","question":"When was Nonvolatile Semiconductor Memory Device filed/granted?"},{"answer":"The commercial applications of the Nonvolatile Semiconductor Memory Device are extensive and span across various product categories and market segments due to its fundamental improvements in memory operation.\n\n**Solid-State Drives (SSDs):** This technology will enable the development of faster, more reliable, and higher-endurance SSDs for both consumer (laptops, desktops) and enterprise (servers, data centers) markets. **Mobile Devices:** Smartphones and tablets will benefit from quicker app loading, faster data storage, and extended device lifespan. **Embedded Systems:** Microcontrollers and specialized processors in IoT devices, automotive electronics, and industrial control systems will utilize this for robust and efficient onboard memory.\n\nFurthermore, it is highly applicable to **High-Density Memory Modules** like advanced 3D NAND, QLC, and future PLC flash, allowing these complex technologies to operate with greater stability. The Nonvolatile Semiconductor Memory Device provides a competitive edge for manufacturers to create premium memory products that offer superior data integrity and performance, meeting the stringent demands of modern computing.\n\nKeywords: commercial applications, SSD technology, mobile device memory, embedded systems, high-density flash, enterprise solutions, memory product development","question":"What are the commercial applications of Nonvolatile Semiconductor Memory Device?"},{"answer":"The Nonvolatile Semiconductor Memory Device lays a robust foundation for numerous future developments in nonvolatile memory technology. Its core principles of precise and isolated erase operations are critical for overcoming challenges in next-generation memory architectures.\n\nWe can expect to see its integration enabling **even higher-density memory solutions**, such as Penta-Level Cell (PLC) or beyond, by mitigating the increased cell-to-cell interference and erase disturb that come with storing more bits per cell. The technology could also be adapted and applied to **emerging nonvolatile memory types** like Resistive RAM (ReRAM), Magnetoresistive RAM (MRAM), or Phase-Change Memory (PCM) to enhance their erase characteristics and overall reliability, accelerating their path to widespread adoption.\n\nFurther developments might include **dynamic voltage scaling** based on memory wear levels, integration with **advanced AI-driven memory controllers** for predictive maintenance, and contributions to **self-healing memory systems** that can autonomously manage and correct data issues. This patent positions its implementers at the forefront of memory innovation, driving the evolution towards more intelligent, resilient, and high-performing digital storage.\n\nKeywords: future memory, technology roadmap, high-density memory, emerging NVM, AI memory controllers, self-healing memory, semiconductor innovation, future prospects","question":"What are the future developments expected for Nonvolatile Semiconductor Memory Device?"}],"topics":["nonvolatile semiconductor memory device","memory erasure","flash memory","data integrity","semiconductor patent","relentless","pursuit","higher"],"tech_cluster":null},"seo":{"title":"Nonvolatile Semiconductor Memory Device - Precision Erase Patent US-9852797","description":"Discover the Nonvolatile Semiconductor Memory Device patent (US-9852797) for precise sub-block erasure. Boost memory performance, data integrity, and device lifespan.","keywords":["nonvolatile semiconductor memory device","memory erasure","flash memory","data integrity","semiconductor patent","memory performance","US-9852797","sub-block erase","voltage control memory","memory device lifespan","tech innovation","data storage"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852797","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852797","citation_suggestion":"Patentable. \"Nonvolatile semiconductor memory device\" (US-9852797). https://patentable.app/patents/US-9852797","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852797","json":"https://patentable.app/api/llm-context/US-9852797","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:30.556Z"}