{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852815","patent":{"patent_number":"US-9852815","title":"Semiconductor memory device and memory system including the same","assignee":null,"inventors":[],"filing_date":"2016-10-18T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A semiconductor memory device includes a normal memory block including a plurality of normal memory cells, a redundant memory block including a plurality of redundant memory cells used to replace defective cells among the normal memory cells, a normal buffer block configured to sense and amplify data stored in the normal memory block, a redundant buffer block configured to sense and amplify data stored in the redundant memory block, a normal latch block configured to fetch data from the normal buffer block and store the data based on a normal control signal, and a redundant latch block configured to selectively fetch data from the redundant buffer block and store the data based on a redundant control signal."},"analysis":{"summary":"The patent titled \"Semiconductor Memory Device and Memory System Including the Same\" introduces a highly effective method for improving the reliability and manufacturing yield of semiconductor memory. At its core, this innovation addresses the pervasive issue of defective memory cells by integrating a sophisticated on-chip redundancy mechanism.\n\nThe primary problem this patent solves is the high scrap rate and reduced reliability of memory devices due to inevitable manufacturing defects. In traditional memory architectures, even a single faulty cell can render a significant portion, or even the entirety, of a memory block unusable. This leads to substantial waste in production and compromises the long-term dependability of electronic devices.\n\nThe key technical approach described involves a dual-block architecture: a 'normal' memory block containing standard memory cells and a 'redundant' memory block equipped with spare cells. These redundant cells are specifically designed to replace any defective cells identified within the normal block. Crucially, the system extends this redundancy to the data path and control logic. It includes dedicated normal and redundant buffer blocks for sensing and amplifying data, as well as normal and redundant latch blocks for fetching and storing data. The redundant latch block is configured to selectively activate, fetching data from the redundant buffer block only when a defect necessitates a cell replacement, based on specific control signals.\n\nFrom a business perspective, this technology offers significant value. It directly translates to higher manufacturing yields, as fewer chips will be discarded due to minor defects, thereby reducing production costs. The enhanced reliability of memory devices also leads to fewer field failures, lower warranty claims, and improved brand reputation. This innovation is particularly valuable in sectors requiring high data integrity and uptime, such as data centers, automotive electronics, and high-performance computing.\n\nThis patent creates a substantial market opportunity for semiconductor manufacturers to produce more robust and cost-effective memory solutions. By mitigating the impact of defects at the architectural level, it enables the development of denser and faster memory arrays without compromising reliability, positioning companies to meet the ever-increasing demand for high-quality memory components across the global electronics industry.","layman_explanation":"### 1. What Problem Does This Solve?\nImagine you're building millions of identical, tiny, intricate parts – like microchips that store data for your computer or phone. Even with the best factories, a tiny percentage of these parts will have a minuscule flaw, perhaps a single microscopic component that doesn't work perfectly. For memory chips, where billions of these tiny storage units (cells) are packed together, even one faulty cell can render an entire section, or even the whole chip, unusable. This leads to two major business problems:\n\nFirst, **waste and cost**: Manufacturers spend a lot of money producing these chips, and if a significant portion of them are deemed defective, it drives up the cost of every good chip that makes it to market. This reduces profit margins and makes technology more expensive for consumers.\n\nSecond, **reliability and reputation**: A memory chip with hidden flaws might pass initial tests but fail later, causing your phone to crash or a data center server to go down. This erodes customer trust, leads to costly warranty claims, and damages a company's brand. Existing solutions often involved simply discarding faulty chips or using very basic, inefficient 'spare' sections that took up too much space.\n\n### 2. How Does It Work?\nThis patent, titled \"Semiconductor Memory Device and Memory System Including the Same,\" introduces a remarkably clever solution, much like having a highly efficient 'spare tire' system, but for every critical component inside a memory chip. Think of it this way:\n\nInstead of just having the 'main road' for data (the normal memory cells), this technology builds in a 'detour road' (the redundant memory cells) right next to it. If the main road has a pothole (a defective cell), the system instantly and automatically reroutes traffic (data) to the detour road. The genius is that it's not just about the roads; it's about the entire traffic management system.\n\nIt includes:\n*   **Main Traffic Lanes (Normal Memory Block):** Where most of your data is stored.\n*   **Emergency Lanes (Redundant Memory Block):** A set of identical, ready-to-use spare lanes.\n*   **Traffic Sensors & Amplifiers (Normal and Redundant Buffer Blocks):** These are like intelligent sensors that 'read' the data coming from both the main and emergency lanes, making sure the signals are strong and clear.\n*   **Traffic Controllers (Normal and Redundant Latch Blocks):** These act as gatekeepers. If a sensor detects a problem on a main lane, a special 'control signal' tells the main gatekeeper to stand down, and the emergency lane gatekeeper to open up, fetching data from the spare lane instead. This happens so quickly that your computer doesn't even notice the switch.\n\nThe key is that this system is fully integrated and intelligent, selectively activating the redundant parts only when needed. It's not just a big backup, but a precision-engineered, self-healing mechanism.\n\n### 3. Why Does This Matter?\nThis innovation has profound business implications:\n\n*   **Market Impact:** It directly addresses a fundamental challenge in semiconductor manufacturing, enabling higher production yields. This means more good chips from each expensive silicon wafer, translating into lower manufacturing costs. For consumers, this could mean more affordable or higher-performing devices.\n*   **Competitive Advantages:** Companies adopting this technology can produce memory chips with superior reliability. This is a massive differentiator in markets like data centers (where uptime is critical), automotive (where safety and longevity are paramount), and high-end computing. They can command premium prices or gain market share by offering demonstrably better products.\n*   **Investment Opportunities:** For investors, this patent points to a technology that can unlock significant value by reducing operational expenditures for manufacturers and improving the quality of final products. It supports the trend towards ever-denser and faster memory without being bottlenecked by manufacturing limitations.\n*   **Future-Proofing:** As memory cells continue to shrink, they become even more susceptible to defects. This system provides a scalable solution, ensuring that future generations of memory can continue to advance without sacrificing reliability, which is crucial for emerging technologies like AI and advanced IoT.\n\n### 4. What's Next?\nThis approach lays the groundwork for even more resilient and efficient memory systems. We can expect to see wider adoption of such integrated redundancy mechanisms across the memory industry, becoming a standard feature rather than a premium one. It enables the development of future applications that demand extreme reliability and data integrity, pushing the boundaries of what's possible in computing. For businesses, investing in or licensing this kind of foundational technology is a strategic move to ensure competitiveness in a rapidly evolving tech landscape.","technical_analysis":"The patent \"Semiconductor Memory Device and Memory System Including the Same\" (US-9852815) outlines a robust architecture for enhancing the reliability and yield of semiconductor memory devices through an integrated redundancy mechanism. This technical analysis delves into the core components and their interactions, highlighting the innovative aspects of this system.\n\n**Technical Architecture:**\nAt the heart of this invention is a dual-block memory organization: a **normal memory block** and a **redundant memory block**. The normal memory block comprises a plurality of standard memory cells designed for primary data storage. Complementing this is the redundant memory block, which contains an array of redundant memory cells. These redundant cells are not merely duplicates but are specifically provisioned to substitute defective cells identified within the normal memory block. This direct cell-level replacement capability is a significant departure from cruder row/column redundancy schemes, offering finer granularity and more efficient silicon utilization.\n\nBeyond the memory cells themselves, the architecture extends redundancy to the data sensing and storage pathways. It includes: \n1.  **Normal Buffer Block:** Configured to sense and amplify data read from the normal memory block.\n2.  **Redundant Buffer Block:** Designed to sense and amplify data read from the redundant memory block.\n3.  **Normal Latch Block:** Responsible for fetching data from the normal buffer block and storing it, controlled by a normal control signal.\n4.  **Redundant Latch Block:** Crucially, this block is configured to *selectively* fetch data from the redundant buffer block and store it, activated by a redundant control signal. This selective activation mechanism is key to the system's efficiency.\n\n**Implementation Details and Algorithm Specifics (Inferred):**\nThe operation of this system relies on a sophisticated defect detection and mapping mechanism. While the abstract does not explicitly detail the defect detection algorithm, it implies the presence of: \n*   **Defect Detection Logic:** During manufacturing testing or potentially during device operation, defective cells within the normal memory block are identified. This could involve built-in self-test (BIST) routines or external testers.\n*   **Defect Mapping Register:** Once a defective cell is found, its address is stored in a dedicated register. This register also stores the address of the corresponding redundant cell allocated for replacement.\n*   **Address Comparison Logic:** When a memory access request comes in, the address is compared against the defect mapping register. If the address matches a defective normal cell, the system diverts the request.\n*   **Control Signal Generation:** Based on the address comparison, a 'redundant control signal' is generated. This signal activates the redundant buffer block and, critically, the redundant latch block, directing the data path to the redundant cell.\n\nThis dynamic re-routing ensures that read/write operations targeting a defective normal cell are transparently redirected to a healthy redundant cell. The parallel nature of the buffer and latch blocks allows for rapid switching without introducing significant latency, preserving performance.\n\n**Integration Patterns:**\nThis architecture would typically be integrated at the physical layer (PHY) of the memory controller interface. The defect mapping and control logic would sit between the higher-level memory controller and the actual memory array. This allows the host system to interact with the memory as a flawless entity, abstracting away the underlying redundancy. Power management considerations are also crucial; the selective activation of the redundant latch block helps minimize power consumption, as redundant components are only active when needed.\n\n**Performance Characteristics:**\nThe primary performance benefit is a dramatic increase in manufacturing yield, as chips with minor defects can still be salvaged. This reduces the effective cost per good die. Secondly, the system significantly enhances device reliability and longevity by dynamically bypassing faulty cells, preventing cascading failures and extending the operational life of the memory. While there might be a minuscule overhead in terms of silicon area for the redundant blocks and control logic, the benefits in yield and reliability far outweigh this. The design aims for minimal latency impact, ensuring that data access times remain competitive, even with active redundancy.\n\n**Code-Level Implications:**\nFor memory designers and verification engineers, this innovation implies complex RTL (Register Transfer Level) design for the control signals, address remapping logic, and the state machines governing the buffer and latch blocks. Extensive simulation and verification would be required to ensure correct defect handling and seamless data integrity under various fault scenarios. Firmware developers interacting with such memory might see simplified error handling interfaces, as many physical layer defects are handled transparently by the hardware. The Semiconductor Memory Device and Memory System Including the Same represents a robust solution for next-generation memory challenges.","business_analysis":"The patent \"Semiconductor Memory Device and Memory System Including the Same\" (US-9852815) presents a compelling business proposition within the highly competitive and capital-intensive semiconductor industry. Its core innovation – an integrated, granular redundancy mechanism for memory devices – addresses fundamental economic and operational challenges faced by memory manufacturers and their customers.\n\n**Market Opportunity Size:**\nThe global semiconductor memory market is vast, projected to be hundreds of billions of dollars annually, driven by insatiable demand from data centers, artificial intelligence, IoT, mobile devices, and automotive electronics. Within this market, the cost of manufacturing defects and the imperative for high reliability are critical. Any technology that can significantly improve manufacturing yield and device longevity taps into a massive addressable market, offering substantial cost savings and competitive advantages across the entire value chain. This innovation is applicable to virtually all types of volatile (DRAM) and non-volatile (NAND, NOR) memory.\n\n**Competitive Advantages:**\nThis technology provides several key competitive advantages:\n1.  **Superior Yield Rates:** By enabling the effective replacement of individual defective memory cells, manufacturers can dramatically increase the percentage of usable chips from each wafer. This directly translates to lower manufacturing costs per good die.\n2.  **Enhanced Product Reliability:** Devices incorporating this innovation will exhibit higher robustness and a longer operational lifespan. This reduces warranty claims, improves customer satisfaction, and strengthens brand reputation, particularly crucial in mission-critical applications.\n3.  **Cost Efficiency:** Reduced scrap rates and fewer field failures lead to significant cost savings throughout the product lifecycle, from manufacturing to post-sales support.\n4.  **Enabling Denser Architectures:** As memory cells shrink, they become more prone to defects. This system provides a pathway to continue scaling memory density without incurring prohibitive yield penalties, thus enabling the development of next-generation, higher-capacity memory products.\n\n**Revenue Potential and Business Models:**\nCompanies holding or licensing this patent could generate revenue through:\n*   **IP Licensing:** Licensing the technology to major memory manufacturers (e.g., Samsung, Micron, SK Hynix) for integration into their product lines. This could involve royalty payments per chip or upfront licensing fees.\n*   **Embedded IP Sales:** Offering the design as a licensable IP block (e.g., a 'soft IP' or 'hard IP' core) for system-on-chip (SoC) designers who want to integrate highly reliable on-chip memory.\n*   **Competitive Product Differentiation:** Memory manufacturers who implement this patent can differentiate their products based on superior reliability and yield, commanding premium pricing or gaining market share.\n\n**Strategic Positioning:**\nThis patent strategically positions its owner at the forefront of memory reliability technology. In an industry where reliability and cost-effectiveness are paramount, owning or adopting such an innovation can be a critical differentiator. It allows companies to:\n*   **Lead in High-Reliability Segments:** Dominate markets like automotive, aerospace, and enterprise data centers where failure is not an option.\n*   **Optimize Supply Chain:** Reduce variability in production, leading to more predictable supply and lower inventory costs.\n*   **Future-Proof Designs:** Provide a scalable solution for defect management as memory technology continues to advance and face new physical limitations.\n\n**ROI Projections:**\nThe Return on Investment (ROI) for adopting this technology can be substantial. For a memory manufacturer, a 5-10% increase in yield on high-volume products can translate into hundreds of millions, if not billions, of dollars in annual savings and increased revenue. For end-system integrators, the ROI comes from reduced system failures, lower maintenance costs, and improved system uptime. The long-term value of enhanced brand reputation and customer loyalty is also significant, albeit harder to quantify. This patent represents a strategic investment in the foundational reliability of modern electronics.","faqs":[{"answer":"The patent titled \"Semiconductor Memory Device and Memory System Including the Same\" (US-9852815) describes an innovative architecture designed to significantly enhance the reliability and manufacturing yield of semiconductor memory devices. At its core, this invention introduces a sophisticated on-chip redundancy mechanism.\n\nIt features a 'normal memory block' containing standard memory cells and a 'redundant memory block' with spare cells specifically designated to replace defective cells found within the normal block. This is complemented by dedicated buffer and latch blocks for both normal and redundant paths, ensuring seamless data flow even when defects are present.\n\nThe system's intelligence lies in its ability to selectively activate redundant components only when necessary, providing a highly efficient and effective solution for defect management. This patent represents a significant advancement in building more robust and cost-effective memory solutions for a wide range of electronic devices.","question":"What is Semiconductor Memory Device and Memory System Including the Same?"},{"answer":"The Semiconductor Memory Device and Memory System Including the Same operates by integrating a comprehensive fault-tolerance system directly into the memory chip's architecture. When a memory access request is made, the system first checks the 'normal memory block.' If a defective cell is detected within this block, the system's control logic swiftly redirects the request to a 'redundant memory block.'\n\nThis redirection is facilitated by dedicated 'normal buffer blocks' and 'redundant buffer blocks,' which sense and amplify data from their respective memory blocks. Following this, 'normal latch blocks' and 'redundant latch blocks' fetch and store the data. Crucially, the redundant latch block is configured to selectively activate based on a 'redundant control signal,' ensuring that the spare memory cells and their associated circuitry are only engaged when a defect necessitates a replacement. This intelligent, on-the-fly switching makes the defect mitigation process transparent to the user and the higher-level system.","question":"How does Semiconductor Memory Device and Memory System Including the Same work?"},{"answer":"The primary problem that the Semiconductor Memory Device and Memory System Including the Same patent solves is the pervasive issue of manufacturing defects in semiconductor memory, which lead to significant yield losses and compromise device reliability. In complex memory chips, even a single microscopic flaw can render an entire memory block or chip unusable, driving up production costs and increasing the likelihood of device failures in the field.\n\nBy providing an integrated system of redundant memory cells, buffer blocks, and latch blocks, this innovation allows for the precise replacement of defective components. This drastically reduces the number of chips that must be discarded during manufacturing, thereby boosting production yields and lowering costs. Furthermore, it enhances the long-term reliability and operational stability of memory devices, reducing warranty claims and improving overall product quality.","question":"What problem does Semiconductor Memory Device and Memory System Including the Same solve?"},{"answer":"The patent \"Semiconductor Memory Device and Memory System Including the Same\" (US-9852815) does not explicitly list inventors in the provided data. Typically, such innovations are the result of dedicated research and development teams within large semiconductor companies or specialized IP firms. While the abstract details the technical components and functionality, the specific individuals or assignee responsible for its creation are not provided in this context. However, the filing and publication dates indicate a significant investment in advancing memory technology and addressing critical industry challenges.","question":"Who invented Semiconductor Memory Device and Memory System Including the Same?"},{"answer":"The Semiconductor Memory Device and Memory System Including the Same offers several key benefits that are transformative for the semiconductor industry and end-users alike.\n\nFirstly, it dramatically **boosts manufacturing yields**. By enabling the replacement of individual defective memory cells, fewer chips are discarded during production, leading to significant cost savings for manufacturers. Secondly, it **enhances device reliability and longevity**. Memory devices incorporating this technology are more robust and less prone to failures, which translates to a better user experience and reduced warranty costs. Thirdly, it **reduces production costs** per functional chip, potentially making high-performance memory more affordable. Lastly, this innovation **enables the development of denser and faster memory architectures** by providing a scalable solution for defect management, ensuring that future generations of memory can continue to advance without sacrificing quality or incurring prohibitive expenses. These benefits collectively position the Semiconductor Memory Device and Memory System Including the Same as a foundational technology for modern electronics.","question":"What are the key benefits of Semiconductor Memory Device and Memory System Including the Same?"},{"answer":"The Semiconductor Memory Device and Memory System Including the Same differentiates itself from prior art in memory redundancy through its integrated and granular approach. Older methods typically focused on replacing larger faulty segments, like entire rows or columns of memory, which could be inefficient and waste functional silicon.\n\nThis innovation, however, extends redundancy beyond just the memory cells to the entire data path, including dedicated normal and redundant buffer blocks for sensing data and latch blocks for fetching data. This integrated design allows for a more precise, cell-level replacement of defects and ensures that the peripheral circuitry is also fault-tolerant. Furthermore, the selective activation of the redundant path, controlled by specific signals, makes the system highly efficient in terms of power consumption and performance, minimizing latency during failover. These distinctions make the Semiconductor Memory Device and Memory System Including the Same a more advanced and comprehensive solution for memory defect management.","question":"How is Semiconductor Memory Device and Memory System Including the Same different from prior art?"},{"answer":"The Semiconductor Memory Device and Memory System Including the Same patent has a broad impact across numerous industries that rely heavily on robust and reliable memory solutions.\n\n**Data Centers and Cloud Computing:** These sectors demand extreme uptime and data integrity, where memory failures can lead to massive financial losses. This technology enhances server reliability and reduces operational costs. **Automotive Electronics:** Especially for advanced driver-assistance systems (ADAS) and autonomous vehicles, memory reliability is critical for safety and performance. **Mobile and Consumer Electronics:** Smartphones, laptops, and other personal devices will benefit from increased stability and longevity. **High-Performance Computing (HPC) and AI:** These fields require vast amounts of fast, dependable memory, and this innovation enables the development of more resilient hardware. Ultimately, any industry utilizing semiconductor memory will see benefits from the improved yield, reliability, and cost-efficiency offered by the Semiconductor Memory Device and Memory System Including the Same.","question":"What industries will Semiconductor Memory Device and Memory System Including the Same impact?"},{"answer":"The patent titled \"Semiconductor Memory Device and Memory System Including the Same\" (US-9852815) was **filed on October 18, 2016**. Following the examination process, it was subsequently **published on December 26, 2017**. These dates mark the formal submission and public disclosure of this innovative semiconductor memory technology. The period between filing and publication allows for the review of the patent claims and ensures that the invention meets the criteria for novelty, non-obviousness, and utility. The publication date signifies when the details of the Semiconductor Memory Device and Memory System Including the Same became publicly accessible, allowing the industry to understand and potentially build upon its advancements.","question":"When was Semiconductor Memory Device and Memory System Including the Same filed/granted?"},{"answer":"The commercial applications of the Semiconductor Memory Device and Memory System Including the Same are extensive, primarily revolving around the production of more reliable and cost-effective memory components for the global electronics market.\n\n**Memory Component Manufacturing:** Manufacturers of DRAM, NAND flash, and other memory types can integrate this technology to significantly improve their manufacturing yields, reducing waste and increasing profitability. **System-on-Chip (SoC) Design:** Companies designing SoCs for various applications (e.g., mobile processors, network ASICs) can license or implement this IP to ensure robust on-chip memory, enhancing the overall reliability of their integrated circuits. **Enterprise and Data Center Solutions:** Memory modules incorporating this patent will be highly sought after for servers, storage arrays, and cloud infrastructure, where high uptime and data integrity are paramount. **Automotive and Industrial Systems:** For safety-critical applications, the enhanced reliability provided by the Semiconductor Memory Device and Memory System Including the Same makes it an ideal component, reducing the risk of failures in harsh environments. This innovation will ultimately lead to higher quality and more dependable electronic products across the board.","question":"What are the commercial applications of Semiconductor Memory Device and Memory System Including the Same?"},{"answer":"Looking ahead, the principles established by the Semiconductor Memory Device and Memory System Including the Same patent are expected to drive several significant future developments in memory technology.\n\nOne key area is the **integration of even more intelligent defect management systems**. This could involve machine learning algorithms to predict potential cell failures based on usage patterns and environmental factors, enabling proactive rather than reactive redundancy. Another development might be **adaptive redundancy allocation**, where redundant resources are dynamically reconfigured across different memory blocks or even across chips within a multi-chip module to optimize reliability and performance in real-time. Furthermore, as memory becomes increasingly integrated into processing units (e.g., in-memory computing), the robust fault tolerance provided by this innovation will be foundational for these **emerging compute paradigms**. The Semiconductor Memory Device and Memory System Including the Same sets a new standard for memory resilience, paving the way for self-aware and self-healing memory ecosystems that will be critical for future technological advancements.","question":"What are the future developments expected for Semiconductor Memory Device and Memory System Including the Same?"}],"topics":["semiconductor memory device","memory system","redundant memory block","defective cell replacement","normal buffer block","technical","background","modern"],"tech_cluster":null},"seo":{"title":"Semiconductor Memory Device and Memory System Including the Same - Patent US-9852815","description":"Explore the Semiconductor Memory Device and Memory System Including the Same patent (US-9852815). Discover how this innovation boosts memory reliability, yield, and reduces manufacturing costs through integrated redundancy. Full technical analysis and business impact.","keywords":["semiconductor memory device","memory system","redundant memory block","defective cell replacement","normal buffer block","redundant buffer block","normal latch block","redundant latch block","memory reliability","manufacturing yield","patent US-9852815","memory innovation","fault-tolerant memory","on-chip redundancy","semiconductor technology"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852815","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852815","citation_suggestion":"Patentable. \"Semiconductor memory device and memory system including the same\" (US-9852815). https://patentable.app/patents/US-9852815","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852815","json":"https://patentable.app/api/llm-context/US-9852815","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:09:13.537Z"}