{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852902","patent":{"patent_number":"US-9852902","title":"Material deposition for high aspect ratio structures","assignee":null,"inventors":[],"filing_date":"2014-10-03T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall."},"analysis":{"summary":"The patent titled \"Material Deposition for High Aspect Ratio Structures\" (US-9852902) introduces a groundbreaking method for precisely depositing material layers onto semiconductor workpieces, specifically addressing the challenges associated with high aspect ratio structures. The core innovation lies in utilizing an ion implantation process, not for doping, but for the actual formation and deposition of a material layer.\n\nThe primary problem this invention solves is the difficulty of achieving uniform and conformal material coverage within extremely narrow and deep features, such as trenches, which are prevalent in advanced microelectronic devices. Traditional deposition techniques often suffer from poor step coverage, leading to voids, non-uniform film thickness, and compromised device performance. This patent offers a solution by enabling directional deposition that ensures material is laid down effectively along the sidewalls and at the bottom of these intricate structures.\n\nTechnically, the approach involves supplying specific ion species to a workpiece that has a patterned layer over a substrate. These ion species are then implanted to form the desired material layer. A critical technical aspect is that the deposited material layer possesses etch selectivity to the underlying pattern layer, which is crucial for subsequent precise patterning and fabrication steps. For trenches, the patent explicitly details the deposition of the material layer into the trench, specifically on the bottom and in a direction along the sidewall, ensuring complete and uniform filling.\n\nFrom a business perspective, this technology holds immense value. It enables the fabrication of higher-density, more powerful, and more reliable microelectronic devices, including advanced memory, processors, and sensors. By overcoming a fundamental manufacturing bottleneck, this innovation can lead to increased yields, reduced production costs, and the development of entirely new device architectures that were previously unfeasible. The market opportunity is substantial, as virtually all sectors relying on advanced electronics will benefit from improved semiconductor performance and manufacturing efficiency. This patent positions its assignee to be a leader in next-generation semiconductor fabrication, offering a strategic advantage in a highly competitive global market.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're building a highly complex, miniature city made of microchips. Within this city, there are incredibly tall, narrow skyscrapers and deep, skinny canyons – these are what we call 'high aspect ratio structures.' To make these chips work, you need to coat the inside of every single one of these tiny structures with a very specific material, perfectly and uniformly. The problem is, traditional manufacturing methods are like trying to spray paint the inside of a very long, thin straw – the paint often collects at the top, leaves gaps, or doesn't reach the bottom at all. This results in faulty connections, unreliable performance, and a lot of wasted effort and materials in chip production. Essentially, it's a major roadblock to making our electronic devices smaller, faster, and more powerful.\n\n### How Does It Work?\n\nThis innovative patent, \"Material Deposition for High Aspect Ratio Structures,\" introduces a fundamentally new way to 'paint' these tiny structures. Instead of using traditional spraying or chemical reactions, it employs a sophisticated technique called 'ion implantation' for *deposition*. Think of it like this: instead of just spraying paint, this method uses highly controlled, invisible 'ion' particles – like microscopic, intelligent building blocks. These building blocks are precisely aimed and accelerated towards the chip. When they hit the surface, they don't just stick; they actually become part of a new, perfectly formed material layer. The real genius is its ability to direct these ion building blocks not just onto the top surface, but specifically *into* the deep trenches, ensuring they stick uniformly to the bottom and *all along the sidewalls*. This precise, directional 'building' process ensures that every part of the tiny skyscraper or canyon gets its perfect, even coat of material.\n\n### Why Does This Matter?\n\nThis technology matters immensely because it directly impacts the fundamental building blocks of almost every electronic device we use. By solving the persistent problem of uneven material deposition in high aspect ratio structures, Material Deposition for High Aspect Ratio Structures enables the creation of chips that are significantly more reliable, perform better, and can be designed with even greater density. This means:\n    *   **Faster and Smaller Devices:** It paves the way for the next generation of smartphones, computers, AI accelerators, and IoT devices, allowing them to be more powerful and compact.\n    *   **Higher Production Yields:** Manufacturers can produce more functional chips from each wafer, dramatically reducing waste and production costs.\n    *   **New Design Possibilities:** Engineers gain the freedom to design complex 3D chip architectures that were previously impossible to reliably manufacture, accelerating innovation across the tech industry.\n    *   **Competitive Edge:** Companies adopting this approach will gain a significant market advantage by being able to deliver superior products at potentially lower costs, driving innovation and profitability.\n\n### What's Next?\n\nThe Material Deposition for High Aspect Ratio Structures patent is a foundational technology. Its future applications are vast, extending to advanced memory chips (like 3D NAND and DRAM), cutting-edge processors, and specialized sensors. We can expect to see rapid adoption within leading semiconductor foundries and integrated device manufacturers. This innovation is likely to accelerate the timeline for next-generation product releases, leading to a wave of more powerful and efficient electronics hitting the market. For investors, this represents a significant opportunity in the semiconductor equipment and materials sector, as the demand for such precision manufacturing capabilities will only grow.","technical_analysis":"The patent \"Material Deposition for High Aspect Ratio Structures\" (US-9852902) presents a sophisticated method for overcoming critical challenges in semiconductor fabrication, particularly concerning the uniform deposition of materials into high aspect ratio (HAR) structures. This technical analysis will delve into the architecture, implementation details, and performance implications of this innovative approach.\n\n**Technical Architecture and Core Mechanism:**\nThe fundamental architecture revolves around an ion implantation system adapted for material deposition rather than solely doping. The system is designed to precisely supply specific ion species to a workpiece. This workpiece typically comprises a pattern layer (e.g., photoresist, hard mask) over a substrate (e.g., silicon wafer). Unlike conventional PVD where atoms physically sputter onto a surface, or CVD where chemical reactions occur, this invention utilizes the kinetic energy of ion species to implant and subsequently form a continuous material layer. This implies a controlled bombardment where the incoming ions are either the constituent atoms of the desired film or react with the surface/pre-existing species to form the film.\n\n**Implementation Details and Algorithm Specifics:**\n1.  **Workpiece Preparation:** A substrate is prepared with a pattern layer, which defines the high aspect ratio structures (e.g., trenches, vias) where material deposition is required. This pattern layer serves as a template.\n2.  **Ion Species Supply:** An ion source generates and accelerates specific ion species. The choice of ion species is critical and depends on the desired material layer composition. For instance, if a silicon nitride layer is to be deposited, nitrogen ions might be implanted into a silicon-rich surface, or silicon and nitrogen ions could be co-implanted. The ions are typically mass-separated and focused into a beam.\n3.  **Ion Implantation Process for Deposition:** This is the core innovation. Instead of shallow doping, the process is engineered for material build-up. The patent explicitly states that the material layer is deposited using an implantation process. This suggests a controlled energy and dose regime that facilitates accumulation rather than just penetration. The kinetic energy of the ions can be tuned to control the deposition rate, film density, and potential interface mixing. The process likely involves a dynamic interplay of ion beam angle, workpiece tilt, and potentially substrate heating to promote film formation and adhesion.\n4.  **Directional Deposition for Trenches:** A key algorithmic aspect is the ability to deposit material on the bottom of a trench *in a direction along the sidewall*. This implies a non-normal incidence of the ion beam relative to the sidewall, or a multi-angle implantation strategy. By carefully controlling the angle of incidence and potentially rotating or tilting the wafer, the ion flux can be directed to impact the sidewalls and bottom uniformly. This overcomes line-of-sight limitations of PVD and diffusion limitations of CVD in HAR structures, ensuring true conformal coverage and gap-fill without voids.\n5.  **Etch Selectivity:** The deposited material layer is designed to have etch selectivity to the pattern layer. This is achieved by carefully selecting the ion species and process parameters to create a film with distinct chemical properties from the underlying pattern, allowing for subsequent selective etching steps (e.g., anisotropic dry etching) to define the final device architecture without damaging the newly formed layer.\n\n**Performance Characteristics and Advantages:**\n*   **Conformal Coverage:** The primary performance advantage is superior conformal coverage in HAR structures, eliminating voids and 'bread-loafing' effects. This is crucial for electrical performance (e.g., low resistance interconnects, high capacitance DRAM cells).\n*   **Film Quality:** Ion-assisted deposition can lead to denser, lower-defect films with improved adhesion and tunable stress, compared to some conventional methods.\n*   **Process Control:** Ion implantation offers precise control over dose, energy, and species, translating to atomic-level control over film thickness and composition.\n*   **Scalability:** This approach is highly scalable to sub-10nm nodes, where HAR features are ubiquitous.\n\n**Integration Patterns and Code-Level Implications:**\nWhile the patent describes a physical process, its integration into a semiconductor fab would involve sophisticated control software. This includes:\n    *   **Recipe Management:** Software for defining and managing ion species, beam energy, dose, tilt/rotation angles, and temperature profiles for specific material layers and HAR geometries.\n    *   **Process Control Systems (PCS):** Real-time monitoring and feedback loops to ensure precise ion beam parameters and wafer positioning.\n    *   **Metrology Integration:** Interfacing with in-situ or ex-situ metrology tools (e.g., SEM, TEM, ellipsometry) to verify film thickness, uniformity, and composition, and feed data back for process optimization.\n    *   **Equipment Automation:** Integration with robotic wafer handling systems for automated loading/unloading and transfer between process modules.\n\nFrom a 'code-level' perspective (referring to the control software), this technology requires robust algorithms for beam steering, dose calculation, and multi-axis motion control of the wafer stage. The ability to dynamically adjust deposition parameters based on real-time feedback would be a complex but highly beneficial integration, enabling adaptive processing for optimal film quality across the entire wafer. This innovation marks a significant leap in precision material engineering, essential for the continued advancement of microelectronics.","business_analysis":"The patent \"Material Deposition for High Aspect Ratio Structures\" (US-9852902) represents a critical technological advancement with profound business implications for the semiconductor industry and beyond. This innovation addresses a fundamental manufacturing bottleneck, unlocking significant market opportunities and offering substantial competitive advantages.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach over a trillion dollars in the coming years, with advanced fabrication techniques being a core driver. A significant portion of this market relies on devices incorporating high aspect ratio (HAR) structures, including 3D NAND flash memory, DRAM, advanced logic processors (CPUs, GPUs), image sensors, and MEMS devices. The ability to uniformly and precisely deposit materials into these intricate geometries is paramount for device performance and yield. Current deposition methods often struggle, leading to defects that cost the industry billions annually. This patent targets a critical pain point in a massive and growing market, positioning its technology as an enabler for future generations of these high-value products. The market for deposition equipment and associated processes is vast, and this innovation could capture a significant share within the advanced segment.\n\n**Competitive Advantages:**\nThis technology offers several distinct competitive advantages:\n1.  **Superior Performance and Yield:** By ensuring conformal and uniform material deposition in HAR structures, the invention leads to higher quality, more reliable devices with improved electrical characteristics. This directly translates to higher manufacturing yields, significantly reducing scrap rates and production costs.\n2.  **Enabler for Advanced Architectures:** The ability to precisely fill and coat HAR features unlocks new design possibilities, enabling the development of even smaller, denser, and more powerful 3D integrated circuits. This is a critical enabler for maintaining Moore's Law and developing next-generation products.\n3.  **Differentiation:** Companies utilizing this technology can produce chips that are genuinely superior in performance and reliability compared to those made with conventional methods, providing a strong basis for product differentiation in a crowded market.\n4.  **Cost Efficiency:** While initial investment in new equipment may be required, the long-term cost savings from increased yield, reduced rework, and faster time-to-market for advanced products can be substantial.\n\n**Revenue Potential and Business Models:**\nRevenue potential for this innovation is multi-faceted. It could involve:\n*   **Licensing:** Licensing the patented technology to major semiconductor manufacturers (IDMs) and foundries.\n*   **Equipment Sales:** Developing and selling specialized ion implantation equipment tailored for this deposition process.\n*   **Process Services:** Offering advanced material deposition as a service to companies lacking the in-house capabilities.\n*   **Joint Ventures/Partnerships:** Collaborating with leading equipment manufacturers or chipmakers to integrate and scale the technology.\n\nGiven the high value of advanced semiconductor components, even a small percentage improvement in yield or performance can translate to billions in additional revenue across the industry. This technology could command significant licensing fees or equipment sales premiums due to its strategic importance.\n\n**Strategic Positioning:**\nThis patent positions its owner as a leader in advanced semiconductor process technology. It moves beyond incremental improvements to offer a fundamental shift in how materials are integrated into complex device structures. Strategically, this allows for either:\n    *   **Technology Leadership:** Becoming the go-to provider for HAR material deposition solutions.\n    *   **Competitive Barrier:** Creating a significant barrier to entry for competitors who rely on less advanced deposition techniques.\n\nThis innovation is aligned with major industry trends towards 3D integration, heterogeneous integration, and advanced packaging, all of which require unprecedented control over material interfaces and geometries.\n\n**ROI Projections:**\nInvestment in this technology promises a strong return on investment (ROI). For chip manufacturers, the ROI would come from:\n    *   **Increased Revenue:** From higher-performing, higher-value chips and increased production capacity due to higher yields.\n    *   **Cost Reduction:** Through reduced waste, fewer reworks, and potentially faster process times.\n    *   **Market Share Gain:** By enabling superior products that capture more of the high-end market.\n\nFor an equipment vendor, the ROI would stem from strong sales of specialized deposition tools and associated services. The long-term impact on the semiconductor ecosystem makes this a strategically valuable patent with substantial commercial upside, driving innovation and profitability across the value chain.","faqs":[{"answer":"Material Deposition for High Aspect Ratio Structures is a patented invention (US-9852902) that introduces a novel method for precisely depositing material layers onto semiconductor workpieces. Its core innovation lies in utilizing an ion implantation process, traditionally used for doping, for the actual formation and deposition of a material layer. This groundbreaking approach specifically addresses the pervasive manufacturing challenge of achieving uniform and conformal material coverage within extremely narrow and deep features, known as high aspect ratio (HAR) structures, which are critical in advanced microelectronic devices.\n\nUnlike conventional deposition techniques that often struggle with 'shadowing effects' or poor step coverage, this technology ensures that material is laid down effectively and uniformly. The process involves supplying specific ion species to a workpiece, which then form the desired material layer through an implantation process. This precise control allows for the creation of high-quality films even in the most challenging geometries.\n\nThe Material Deposition for High Aspect Ratio Structures patent represents a significant leap forward in semiconductor fabrication, enabling the production of more reliable, higher-performing chips by overcoming a fundamental physical limitation. It is a key enabler for the continued miniaturization and increased complexity of electronic components that power our modern world.\n\nKeywords: material deposition, high aspect ratio structures, ion implantation, semiconductor manufacturing, US-9852902, microelectronics, precision layering.","question":"What is Material Deposition for High Aspect Ratio Structures?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent leverages a sophisticated ion implantation process to achieve highly controlled material layering. The mechanism begins with a workpiece, typically a semiconductor wafer, prepared with a pattern layer that defines the intricate high aspect ratio (HAR) structures, such as deep trenches or vias.\n\nNext, specific ion species are generated and supplied in a controlled beam. These ions, which are the constituent atoms of the desired film, are then accelerated and directed towards the workpiece. Crucially, the process parameters, including ion energy, dose, and angle of incidence, are precisely tuned not just for shallow doping, but for the actual accumulation and formation of a continuous material layer on the surface of the pattern layer.\n\nFor HAR structures like trenches, the innovation ensures that the material layer is deposited on the bottom of the trench and, critically, in a direction *along the sidewall*. This directional control is a key differentiator, allowing for uniform and conformal coverage throughout the entire depth of the feature, effectively preventing voids and non-uniform film thickness that plague traditional methods. The kinetic energy of the ions facilitates dense film growth and good adhesion, leading to superior material quality. This precise, atomic-level 'building' rather than simply coating, is what makes Material Deposition for High Aspect Ratio Structures so effective.\n\nKeywords: ion implantation process, material deposition mechanism, high aspect ratio structures, conformal coating, directional deposition, semiconductor fabrication, film formation, ion species.","question":"How does Material Deposition for High Aspect Ratio Structures work?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent solves a critical and long-standing problem in advanced semiconductor manufacturing: the inability to uniformly and precisely deposit materials into high aspect ratio (HAR) structures. As electronic devices become smaller and more powerful, chip designs incorporate increasingly intricate features like deep trenches and narrow vias, where the depth far exceeds the width.\n\nTraditional material deposition techniques, such as Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD), struggle significantly with these geometries. PVD often suffers from 'shadowing effects,' leading to poor step coverage, thicker films at the top edges, and empty spaces or 'voids' within the narrow features. CVD, while better for conformality, can experience precursor depletion in deep trenches, resulting in non-uniform film thickness and compromised material properties along the feature's depth.\n\nThese issues lead to critical defects in semiconductor devices, causing electrical failures, reduced manufacturing yields, and limitations on overall device performance and reliability. The Material Deposition for High Aspect Ratio Structures patent directly addresses this bottleneck by providing a method that ensures complete, uniform, and etch-selective material deposition even in the most challenging HAR structures. By overcoming these manufacturing hurdles, this innovation enables the continued scaling of microelectronic devices and the development of next-generation chip architectures.\n\nKeywords: semiconductor manufacturing challenges, high aspect ratio problem, void formation, non-uniform deposition, device reliability, chip fabrication, material deposition solution, step coverage.","question":"What problem does Material Deposition for High Aspect Ratio Structures solve?"},{"answer":"The patent for Material Deposition for High Aspect Ratio Structures (US-9852902) does not list specific inventors or an assignee in the provided data. However, patents are typically filed by individuals or, more commonly, by corporations or research institutions through their employees (the inventors). In such cases, the rights to the invention are usually assigned to the employer, known as the assignee.\n\nThis practice is common in the semiconductor industry, where large R&D investments are made by companies to develop proprietary manufacturing processes and technologies. While the specific individuals who conceived of and developed the Material Deposition for High Aspect Ratio Structures are not publicly detailed in this abstract, their work represents a significant contribution to the field of microelectronics and material science.\n\nThe absence of specific inventor and assignee information in the provided snippet does not diminish the technical importance or potential impact of the Material Deposition for High Aspect Ratio Structures patent. It remains a crucial innovation for advanced semiconductor fabrication, regardless of the specific entity or individuals behind its creation.\n\nKeywords: patent inventors, patent assignee, US-9852902, invention origin, semiconductor industry research, material deposition patent, intellectual property.","question":"Who invented Material Deposition for High Aspect Ratio Structures?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent offers several transformative benefits for advanced semiconductor manufacturing and the broader electronics industry:\n\nFirstly, it provides **superior conformal coverage and gap-fill** in high aspect ratio (HAR) structures. By precisely directing ion species for deposition along the sidewalls and bottom of deep trenches, this technology virtually eliminates voids and non-uniform film thickness, which are common problems with conventional methods. This ensures the structural integrity and electrical functionality of microscopic features.\n\nSecondly, it enables **enhanced etch selectivity**. The deposited material layer has an inherent etch selectivity to the underlying pattern layer. This is crucial for complex multi-layer fabrication processes, allowing for highly precise patterning and removal of materials without damaging adjacent features, thereby increasing manufacturing yield and simplifying process flows.\n\nThirdly, this innovation leads to **improved device performance and reliability**. Uniform, dense, and defect-free material layers translate directly into better electrical characteristics for chips, such as lower resistance, higher capacitance, and reduced leakage currents. This means more powerful, energy-efficient, and long-lasting electronic devices.\n\nFinally, the Material Deposition for High Aspect Ratio Structures is a **key enabler for next-generation architectures**. By overcoming a fundamental manufacturing bottleneck, it allows engineers to design and reliably produce even smaller, denser, and more complex 3D integrated circuits, pushing the boundaries of Moore's Law and accelerating innovation in fields like AI, IoT, and high-performance computing.\n\nKeywords: key benefits, high aspect ratio structures, conformal deposition, etch selectivity, device performance, manufacturing yield, 3D ICs, semiconductor innovation.","question":"What are the key benefits of Material Deposition for High Aspect Ratio Structures?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent (US-9852902) distinguishes itself significantly from prior art material deposition techniques primarily through its innovative use of ion implantation for film growth and its unique directional deposition capability.\n\n**Traditional PVD (Physical Vapor Deposition)** methods are line-of-sight processes, meaning material is deposited mostly on exposed surfaces. This leads to very poor step coverage in high aspect ratio (HAR) features, creating 'shadowing effects,' 'bread-loafing' at the top, and 'keyhole' voids within deep trenches. The Material Deposition for High Aspect Ratio Structures, by contrast, uses a directed ion beam to deposit material uniformly along sidewalls and bottoms, avoiding these issues entirely.\n\n**Conventional CVD (Chemical Vapor Deposition)** and its variants (e.g., PECVD, HDPCVD) rely on chemical reactions of precursors. While they offer better conformality than PVD, they can still suffer from precursor depletion in extreme HARs, leading to non-uniform film thickness and properties along the feature's depth. The ion implantation process in this patent offers atomic-level control over film formation, overcoming diffusion limitations.\n\n**ALD (Atomic Layer Deposition)** provides excellent conformality due to its self-limiting nature but is inherently a very slow process, making it impractical for depositing thicker films or high-throughput manufacturing. The Material Deposition for High Aspect Ratio Structures offers a potentially faster and more versatile deposition method for various film thicknesses and materials, while maintaining high precision and conformality.\n\nThe key difference lies in the Material Deposition for High Aspect Ratio Structures' ability to leverage the kinetic energy and directionality of ion species to *build* a material layer with precise control, specifically ensuring deposition along the sidewalls of HAR trenches. This unique combination of properties — directional deposition, superior conformality, and inherent etch selectivity — sets it apart as a transformative solution that overcomes the inherent limitations of prior art techniques in the most challenging semiconductor geometries.\n\nKeywords: prior art comparison, ion implantation vs CVD, PVD limitations, ALD differences, high aspect ratio deposition, directional deposition, semiconductor technology, competitive advantage.","question":"How is Material Deposition for High Aspect Ratio Structures different from prior art?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent will have a profound impact across several critical industries, primarily those reliant on advanced semiconductor manufacturing and microelectronics.\n\n**Semiconductor Industry:** This is the most direct and significant impact. The technology directly addresses a fundamental manufacturing bottleneck, enabling the production of next-generation logic processors (CPUs, GPUs), high-density memory (3D NAND flash, DRAM), and specialized analog circuits. This will lead to higher manufacturing yields, reduced costs, and the ability to push the boundaries of device miniaturization and performance. Foundries, integrated device manufacturers (IDMs), and semiconductor equipment suppliers will be directly affected and stand to benefit.\n\n**Consumer Electronics:** Faster, smaller, and more powerful chips enabled by this deposition method will directly translate into more advanced smartphones, laptops, tablets, wearables, and smart home devices. Consumers will benefit from improved performance, battery life, and new functionalities.\n\n**Artificial Intelligence (AI) and High-Performance Computing (HPC):** AI accelerators and HPC systems demand chips with extreme processing power and memory bandwidth. The Material Deposition for High Aspect Ratio Structures can facilitate the fabrication of these complex chips, driving advancements in AI research, data analytics, and scientific computing.\n\n**Automotive Industry:** With the rise of autonomous vehicles, advanced driver-assistance systems (ADAS), and in-car infotainment, there's an increasing demand for sophisticated, reliable, and high-performance semiconductors. This technology will contribute to the development of more capable automotive electronics.\n\n**Internet of Things (IoT) and Industrial Automation:** IoT devices and industrial sensors require efficient, compact, and often specialized chips. The precision offered by Material Deposition for High Aspect Ratio Structures will enable the creation of more robust and feature-rich components for these growing sectors.\n\nIn essence, any industry that relies on the continuous advancement of microchip technology for its products and services will feel the positive ripple effects of the Material Deposition for High Aspect Ratio Structures patent.\n\nKeywords: industry impact, semiconductor applications, consumer electronics, AI hardware, automotive electronics, IoT devices, microelectronics, advanced manufacturing.","question":"What industries will Material Deposition for High Aspect Ratio Structures impact?"},{"answer":"The patent for \"Material Deposition for High Aspect Ratio Structures\" (US-9852902) was filed on **October 3, 2014**. This date marks when the initial application was submitted to the patent office, establishing the priority date for the invention.\n\nFollowing the examination process by patent examiners, which assesses novelty, non-obviousness, and utility, the patent was subsequently granted and published on **December 26, 2017**. The publication date signifies when the patent officially became public record and the claims of the invention were formally recognized and protected.\n\nThe period between the filing and publication dates reflects the time taken for the patent office to review the application, conduct prior art searches, and engage in any necessary correspondence with the applicants. The granting of the Material Deposition for High Aspect Ratio Structures patent on this date confirms its uniqueness and inventive step within the field of semiconductor material deposition.\n\nThis timeline is typical for complex technological patents in the semiconductor industry, underscoring the thorough evaluation process involved before such a significant innovation is officially recognized. The publication of the Material Deposition for High Aspect Ratio Structures patent in late 2017 provided the industry with critical insights into this groundbreaking deposition technique.\n\nKeywords: patent filing date, patent publication date, US-9852902 timeline, invention history, intellectual property, semiconductor patent, material deposition patent.","question":"When was Material Deposition for High Aspect Ratio Structures filed/granted?"},{"answer":"The commercial applications of the Material Deposition for High Aspect Ratio Structures patent are extensive and critical for the advancement of modern electronics. This technology directly impacts the manufacturing of high-performance semiconductor devices, which are the core components of countless products.\n\nOne primary application is in **advanced memory production**, particularly for **3D NAND flash memory** and **DRAM (Dynamic Random-Access Memory)**. 3D NAND relies on stacking numerous layers of memory cells vertically, creating extremely high aspect ratio features. This innovation ensures uniform material filling in these deep channels, enabling higher storage densities and improved reliability. Similarly, in DRAM, the precise deposition into deep trench capacitors is vital for achieving high capacitance and faster access times.\n\nAnother significant application is in the fabrication of **leading-edge logic processors** (CPUs, GPUs, AI accelerators). As transistors shrink, intricate structures like gate-all-around (GAA) architectures and advanced interconnects require flawless material deposition in HAR geometries. The Material Deposition for High Aspect Ratio Structures ensures the integrity of these critical components, leading to faster processing speeds, lower power consumption, and enhanced overall chip performance.\n\nFurthermore, this technology is applicable to **MEMS (Micro-Electro-Mechanical Systems)** and **advanced sensor manufacturing**, where precise material layering in complex 3D structures is essential for functionality. It can also play a role in **advanced packaging technologies** like 3D ICs and chiplets, which rely on dense vertical interconnects. Ultimately, any commercial product requiring highly integrated, reliable, and high-performance microchips—from smartphones and data centers to autonomous vehicles and medical devices—will benefit from the manufacturing capabilities unlocked by Material Deposition for High Aspect Ratio Structures.\n\nKeywords: commercial applications, 3D NAND, DRAM, logic processors, AI accelerators, MEMS, advanced sensors, semiconductor manufacturing, microelectronics products.","question":"What are the commercial applications of Material Deposition for High Aspect Ratio Structures?"},{"answer":"The Material Deposition for High Aspect Ratio Structures patent lays a robust foundation for numerous future developments in semiconductor manufacturing and material science. Given its innovative approach to high aspect ratio (HAR) material deposition, several key advancements can be anticipated.\n\nOne major area of development will be the **expansion of material versatility**. Currently, the patent describes depositing 'a material layer' using ion species. Future work will likely explore the precise deposition of a wider range of materials, including various dielectrics, metals, and possibly even exotic compounds, to meet the diverse needs of next-generation device architectures. This could involve optimizing ion sources for new elements or developing co-implantation strategies for complex alloys.\n\nAnother expected development is **further refinement of directional control and process scalability**. While the patent details deposition along sidewalls, ongoing research will aim to achieve even greater angular precision and uniformity across larger wafer sizes and more extreme aspect ratios. This might involve advanced beam steering techniques, dynamic wafer manipulation systems, and real-time feedback mechanisms to adapt deposition parameters during the process. The integration into high-volume manufacturing (HVM) environments will also drive optimization for throughput and cost-efficiency.\n\nFurthermore, we can expect **hybrid process integration**. Material Deposition for High Aspect Ratio Structures might be combined with other advanced techniques, such as Atomic Layer Deposition (ALD) for initial seeding layers or specialized etching steps, to create synergistic processes that leverage the strengths of multiple methods. This could lead to novel multi-layer stacks with unparalleled properties.\n\nUltimately, the long-term future of Material Deposition for High Aspect Ratio Structures will see it as a critical enabler for **entirely new device paradigms**, including truly vertically integrated 3D ICs, novel quantum computing components requiring atomic-scale precision, and advanced neuromorphic computing architectures. The ability to precisely sculpt materials in 3D at the nanoscale will unlock innovations that are currently beyond our reach, fundamentally reshaping the future of electronics.\n\nKeywords: future developments, material deposition trends, ion implantation advancements, process scalability, hybrid processes, 3D ICs, quantum computing, nanotechnology research.","question":"What are the future developments expected for Material Deposition for High Aspect Ratio Structures?"}],"topics":["material deposition","high aspect ratio structures","ion implantation","semiconductor manufacturing","microelectronics","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Material Deposition for High Aspect Ratio Structures - Patent US-9852902","description":"Discover the Material Deposition for High Aspect Ratio Structures patent, a breakthrough using ion implantation for uniform material layering in microchips. Enhances device performance & yield.","keywords":["material deposition","high aspect ratio structures","ion implantation","semiconductor manufacturing","microelectronics","etch selectivity","conformal coating","3D NAND","chip fabrication","patent US-9852902","device scaling","precision layering","advanced deposition","microchip innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852902","citation_suggestion":"Patentable. \"Material deposition for high aspect ratio structures\" (US-9852902). https://patentable.app/patents/US-9852902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852902","json":"https://patentable.app/api/llm-context/US-9852902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:33:40.984Z"}