{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852904","patent":{"patent_number":"US-9852904","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-07-30T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer."},"analysis":{"summary":"The **Method for Manufacturing Semiconductor Device** patent (US-9852904) introduces a pivotal advancement in the fabrication of oxide semiconductor devices, which are critical components in modern electronics like displays and high-performance transistors. The core innovation addresses a fundamental challenge: achieving optimal and stable electrical characteristics in the oxide semiconductor layer, particularly within its channel formation region.\n\nThe patent proposes a sophisticated mechanism for precisely controlling the oxygen content within this crucial layer. It leverages two existing insulating films: an oxide insulating film located below and in direct contact with the oxide semiconductor layer, and a gate insulating film positioned above and also in direct contact. The key technical approach involves introducing oxygen into the *gate insulating film* using an ion implantation method. This gate insulating film then acts as a controlled reservoir, supplying the implanted oxygen to the adjacent oxide semiconductor layer through diffusion.\n\nThis precise and indirect oxygen delivery system resolves the issue of oxygen vacancies, which can significantly degrade device performance, stability, and reliability. By ensuring a uniform and optimal oxygen stoichiometry, the invention leads to superior electrical properties, including enhanced carrier mobility, reduced leakage currents, and improved threshold voltage stability.\n\nFrom a business perspective, this innovation offers substantial value. It enables the production of higher-performance, more reliable, and energy-efficient semiconductor devices, directly impacting industries such as consumer electronics, automotive, and IoT. The market opportunity lies in meeting the escalating demand for advanced chip technology that can support increasingly complex applications. By improving manufacturing yields and device consistency, this method provides a competitive advantage and offers a clear pathway to higher ROI for semiconductor manufacturers and device integrators.","layman_explanation":"### What Problem Does This Solve?\nModern electronics, from the screens on our phones to the power systems in electric cars, increasingly rely on a special type of component called an 'oxide semiconductor.' These semiconductors are fantastic because they can be transparent, flexible, and very energy-efficient. However, they have a tricky side: their performance is extremely sensitive to the amount of oxygen within their structure. If there isn't enough oxygen, or if it's distributed unevenly, these components become unstable, unreliable, and don't perform as expected. This problem, often referred to as 'oxygen vacancies,' has been a significant hurdle for manufacturers trying to produce high-quality, consistent oxide semiconductor devices at scale. Existing solutions often involve complex annealing processes that are hard to control precisely, leading to inconsistent product quality and higher manufacturing costs.\n\n### How Does It Work?\nThis innovation, known as the **Method for Manufacturing Semiconductor Device**, offers a remarkably clever and precise solution. Imagine you have a delicate sandwich. In the middle is the 'meat' – our oxide semiconductor layer. Above and below it are slices of 'bread' – special insulating films. Instead of trying to season the 'meat' directly, which might damage it, this patent proposes seasoning the *top slice of bread* (the gate insulating film) with a precise amount of oxygen using a highly controlled method called 'ion implantation.' Think of ion implantation as carefully injecting tiny, exact amounts of oxygen into that top layer. Once the oxygen is in the 'bread,' it then slowly and uniformly diffuses into the 'meat' (the oxide semiconductor layer). This ensures the semiconductor gets exactly the right, stable amount of oxygen it needs, without direct, potentially damaging, intervention. It's an indirect but highly effective way to perfect the core material.\n\n### Why Does This Matter?\nThis precise control over oxygen content is a game-changer. It means we can build oxide semiconductor devices that are significantly more stable, perform better, and last longer. For businesses, this translates directly into several critical advantages:\n*   **Higher Quality Products:** Devices like advanced displays, powerful processors, and efficient sensors will be more reliable and perform consistently.\n*   **Reduced Manufacturing Costs:** By minimizing defects and improving consistency, manufacturers can achieve higher yields, reducing waste and rework.\n*   **Competitive Edge:** Companies adopting this technology can differentiate their products through superior performance and reliability, capturing greater market share.\n*   **Enabling New Technologies:** Stable oxide semiconductors are crucial for emerging fields like flexible electronics, transparent displays, and advanced IoT devices, opening up entirely new product categories and revenue streams.\n\nConsider the impact on power efficiency for consumer electronics or the robustness required for automotive components – this method fundamentally strengthens the underlying technology.\n\n### What's Next?\nThe **Method for Manufacturing Semiconductor Device** is poised to become a foundational technique in advanced semiconductor manufacturing. We can expect to see wider adoption in fabrication plants producing next-generation displays, high-performance logic, and specialized sensors. As the demand for more sophisticated and energy-efficient electronics grows, this innovation provides a clear path to meet those needs, potentially accelerating the development and commercialization of products that rely on stable oxide semiconductor technology. For investors, this represents a strategic area, as it underpins significant advancements across the entire electronics industry value chain.","technical_analysis":"The patent **Method for Manufacturing Semiconductor Device** (US-9852904) presents a refined approach to fabricating oxide semiconductor devices, focusing on the critical role of oxygen stoichiometry within the active channel layer. The technical architecture involves a multi-layered stack comprising a substrate, an underlying oxide insulating film, an oxide semiconductor layer (e.g., IGZO), and an overlying gate insulating film, topped by a gate electrode.\n\n**Technical Architecture and Problem Statement:**\nOxide semiconductor devices, particularly thin-film transistors (TFTs), rely on the precise control of charge carrier concentration and mobility within the oxide semiconductor layer. Oxygen vacancies in this layer are known to act as shallow donors, contributing to conductivity, but also as defect sites that can lead to threshold voltage instability (BTI), increased subthreshold swing, and higher leakage currents. Traditional methods for controlling oxygen, such as post-deposition annealing in oxygen atmospheres, often lack the precision and uniformity required for high-performance, stable devices, and can sometimes induce surface damage.\n\n**Core Innovation and Implementation Details:**\nThe invention's core lies in an indirect, yet highly controlled, oxygen supply mechanism. Instead of direct oxygen plasma treatment or annealing of the oxide semiconductor layer, this patent proposes the following sequence:\n1.  **Deposition of Oxide Insulating Film:** A dielectric layer (e.g., SiO2, Al2O3) is deposited below and in contact with the intended oxide semiconductor layer. This film acts as a buffer and can also contribute to the overall oxygen environment.\n2.  **Deposition of Oxide Semiconductor Layer:** The active channel material (e.g., IGZO, ZnO) is deposited.\n3.  **Deposition of Gate Insulating Film:** Another dielectric layer (e.g., HfO2, SiO2, Al2O3) is deposited over and in contact with the oxide semiconductor layer. This layer will serve as the primary oxygen source.\n4.  **Ion Implantation of Oxygen:** This is the critical step. Oxygen ions are implanted *into* the gate insulating film. Ion implantation offers precise control over the dose, energy, and distribution of the implanted species. The energy is selected such that the oxygen ions primarily reside within the gate insulating film, minimizing direct damage to the underlying oxide semiconductor layer.\n5.  **Oxygen Diffusion:** Following implantation (and potentially a subsequent low-temperature anneal), the implanted oxygen atoms diffuse from the gate insulating film into the adjacent oxide semiconductor layer. This diffusion process is critical for 'healing' oxygen vacancies within the channel formation region, leading to a more stable and uniform material.\n\n**Algorithm Specifics (Conceptual):**\nWhile not an 'algorithm' in the software sense, the process parameters form a critical sequence:\n*   **Ion Implantation Dose and Energy:** These parameters are 'tuned' based on the specific oxide semiconductor material and desired oxygen concentration. Higher doses replenish more vacancies, but excessive doses can introduce new defects. Energy dictates the depth profile of the implanted oxygen within the gate insulating film.\n*   **Annealing Temperature and Time:** A post-implantation anneal (typically at moderate temperatures) is crucial to activate the implanted oxygen and facilitate its diffusion into the semiconductor layer. The temperature must be high enough for diffusion but low enough to prevent degradation of other device layers or materials.\n\n**Integration Patterns and Performance Characteristics:**\nThis method integrates seamlessly into existing semiconductor fabrication lines, as both thin-film deposition and ion implantation are standard processes. The primary integration point is the sequence of dielectric and semiconductor layer depositions followed by the targeted ion implantation step. The performance characteristics directly impacted include:\n*   **Threshold Voltage (Vth) Stability:** Improved due to reduced oxygen vacancy-related trap states.\n*   **Carrier Mobility:** Enhanced by minimizing scattering centers caused by oxygen vacancies.\n*   **Subthreshold Swing (SS):** Reduced, indicating better gate control and lower interface trap density.\n*   **Off-State Current (Ioff):** Decreased due to fewer defect-induced leakage paths.\n\n**Code-Level Implications:**\nFor engineers working on device modeling and characterization, this innovation implies more predictable and consistent device parameters. Simulation models can be refined with more accurate material properties. In a manufacturing execution system (MES), the ion implantation step parameters (dose, energy, tilt) would be critical process controls, potentially linked to real-time process monitoring for feedback loops. For device firmware, greater stability means less need for complex compensation algorithms for threshold voltage drift or leakage, potentially simplifying code and improving power efficiency. This technology fundamentally improves the underlying hardware, allowing for more robust and efficient software/firmware design.","business_analysis":"The **Method for Manufacturing Semiconductor Device** patent (US-9852904) represents a significant leap forward in semiconductor fabrication, with profound implications for various high-growth markets. This innovation directly addresses a critical challenge in oxide semiconductor technology, enabling the creation of higher-performance, more reliable, and energy-efficient devices. The business impact analysis reveals substantial market opportunities and strategic advantages.\n\n**Market Opportunity Size:**\nOxide semiconductor devices are pivotal for several multi-billion dollar industries, including:\n*   **Flat Panel Displays:** Especially OLED and high-resolution LCDs, where IGZO TFTs offer superior uniformity and lower power consumption. The display driver IC market alone is projected to reach over $10 billion by 2027.\n*   **IoT and Wearables:** Requiring low-power, stable, and compact transistors.\n*   **Memory (e.g., RRAM, PCRAM):** Oxide-based materials are being explored for next-generation non-volatile memory.\n*   **Power Electronics:** Where wide bandgap oxide semiconductors offer advantages.\n*   **Flexible Electronics:** The low-temperature processing compatibility of oxide semiconductors makes them ideal for flexible substrates.\n\nThe global semiconductor market is expected to exceed $1 trillion by 2030. Within this, the segment for advanced materials and fabrication processes, which this patent directly influences, will see accelerated growth. By solving a fundamental material stability issue, this technology unlocks greater market penetration for oxide semiconductors across these sectors.\n\n**Competitive Advantages:**\nCompanies that adopt this Method for Manufacturing Semiconductor Device will gain several distinct competitive advantages:\n1.  **Superior Device Performance:** Producing chips with higher carrier mobility, better stability, and lower power consumption sets them apart in a competitive market.\n2.  **Increased Manufacturing Yields:** Precise oxygen control reduces device variability and defects, leading to higher yields and lower production costs per unit.\n3.  **Faster Time-to-Market:** By addressing a persistent material challenge, R&D cycles can be shortened, accelerating product development.\n4.  **Enhanced Brand Reputation:** Being at the forefront of semiconductor innovation attracts top talent and strengthens market positioning.\n5.  **IP Protection:** Ownership or licensing of this patent offers a strong competitive moat against rivals.\n\n**Revenue Potential and Business Models:**\nRevenue generation could stem from multiple avenues:\n*   **Direct Product Sales:** Manufacturers using this method can command premium prices for their high-performance oxide semiconductor components (e.g., TFT backplanes, power management ICs).\n*   **Licensing:** Patent holders can license the technology to other semiconductor foundries or integrated device manufacturers (IDMs), generating significant recurring revenue streams.\n*   **Foundry Services:** Foundries specializing in oxide semiconductor fabrication can offer advanced process modules incorporating this innovation, attracting high-value clients.\n*   **Strategic Partnerships:** Collaborations with device manufacturers (e.g., display makers, consumer electronics giants) to co-develop next-gen products.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves as leaders in advanced material engineering and high-performance semiconductor manufacturing. It supports a strategy focused on differentiation through superior product quality and reliability, rather than solely on cost. For companies looking to expand into emerging markets like flexible electronics or advanced IoT, this technology provides a critical enabler.\n\n**ROI Projections:**\nInvestment in implementing this method for manufacturing semiconductor device is likely to yield high returns through several factors:\n*   **Reduced Rework and Scrap:** Higher yields directly translate to cost savings.\n*   **Premium Pricing:** Superior device performance justifies higher selling prices.\n*   **Market Share Gain:** Capturing a larger share of the rapidly growing advanced semiconductor market.\n*   **Long-term Reliability:** Reduced field failures and warranty claims improve customer satisfaction and reduce support costs.\n\nIn essence, this invention provides a robust foundation for building the next generation of electronic devices. Its ability to precisely control the fundamental properties of oxide semiconductors makes it a key enabler for innovation across the entire electronics value chain, promising substantial returns for early adopters and strategic investors.","faqs":[{"answer":"The **Method for Manufacturing Semiconductor Device** patent (US-9852904) describes a novel and highly effective process for fabricating semiconductor devices, specifically those utilizing an oxide semiconductor layer. At its core, this innovation focuses on precisely controlling the oxygen content within the active oxide semiconductor layer, which is crucial for the device's performance and stability.\n\nThis patent introduces a sophisticated technique where oxygen is introduced into a gate insulating film (a protective layer above the semiconductor) using ion implantation. This gate insulating film then acts as a controlled reservoir, supplying oxygen to the underlying oxide semiconductor layer through diffusion. This indirect delivery method is key to overcoming challenges associated with oxygen vacancies in these materials.\n\nBy ensuring optimal oxygen stoichiometry, the Method for Manufacturing Semiconductor Device enables the creation of semiconductor devices with superior electrical characteristics, making them more reliable, efficient, and consistent in performance. It represents a significant step forward in advanced semiconductor manufacturing, particularly for next-generation displays and other high-performance electronics.\n\nKeywords: semiconductor manufacturing, oxide semiconductor, patent US-9852904, oxygen control, device fabrication, electronics innovation.","question":"What is the 'Method for Manufacturing Semiconductor Device' patent?"},{"answer":"The **Method for Manufacturing Semiconductor Device** operates on a clever principle of indirect oxygen delivery. First, a stack of layers is created: an oxide insulating film is placed below the oxide semiconductor layer, and a gate insulating film is placed above it, both in direct contact with the semiconductor.\n\nThe critical step involves using an ion implantation method to introduce oxygen ions specifically into the *gate insulating film*. Ion implantation is a highly precise technique that allows for controlled dosing and depth placement of atoms. By implanting into the gate insulating film, the sensitive oxide semiconductor layer itself is protected from potential damage during the implantation process.\n\nAfter implantation, and often with a subsequent thermal annealing step, the implanted oxygen atoms become mobile and diffuse from the gate insulating film into the adjacent oxide semiconductor layer. This controlled diffusion ensures a uniform and optimal supply of oxygen to the channel formation region, effectively 'healing' oxygen vacancies and optimizing the electrical properties of the semiconductor device. This sophisticated process ensures material integrity and enhances device performance.\n\nKeywords: how it works, ion implantation, oxygen diffusion, gate insulating film, oxide semiconductor layer, semiconductor process, technical explanation.","question":"How does the 'Method for Manufacturing Semiconductor Device' work?"},{"answer":"The **Method for Manufacturing Semiconductor Device** primarily solves the critical problem of oxygen vacancies and their detrimental effects in oxide semiconductor devices. In these materials, oxygen vacancies (missing oxygen atoms) can act as defects, leading to several issues that degrade device performance and reliability.\n\nThese issues include threshold voltage (Vth) instability, where the voltage required to turn the device on fluctuates over time, making devices unreliable. Oxygen vacancies also contribute to increased leakage currents, wasting power, and reduced carrier mobility, slowing down device operation. Traditional methods for introducing oxygen, such as direct plasma treatment or high-temperature annealing, often struggle to achieve uniform oxygenation without causing material damage or being incompatible with certain device architectures.\n\nBy providing a precise, controlled, and damage-mitigating method for supplying oxygen, this patent ensures the oxide semiconductor layer has optimal oxygen stoichiometry. This directly leads to more stable, higher-performing, and reliable devices, overcoming a significant hurdle in the widespread adoption and advancement of oxide semiconductor technology.\n\nKeywords: oxygen vacancies, device instability, semiconductor defects, threshold voltage, leakage current, material science problem, reliability.","question":"What problem does the 'Method for Manufacturing Semiconductor Device' solve?"},{"answer":"The patent for the **Method for Manufacturing Semiconductor Device** (US-9852904) lists its inventors as undisclosed in the provided data. Similarly, the assignee, which is the entity or company to whom the patent rights are granted, is also not specified in the given information.\n\nIn the patent world, inventors are the individuals who conceived the invention, while the assignee is typically the company or organization that employs the inventors and to whom the patent rights are assigned. This is a common practice, as companies invest heavily in research and development and secure patents to protect their intellectual property.\n\nRegardless of the specific inventors or assignee, the innovation described in this patent contributes significantly to the collective knowledge and capabilities within the semiconductor industry, pushing the boundaries of what's possible in electronics manufacturing.\n\nKeywords: inventors, assignee, patent ownership, semiconductor patent, intellectual property, US-9852904.","question":"Who invented the 'Method for Manufacturing Semiconductor Device'?"},{"answer":"The **Method for Manufacturing Semiconductor Device** offers several key benefits that are set to significantly impact the electronics industry. Foremost among these is the dramatic improvement in device stability. By precisely controlling oxygen content, the method mitigates threshold voltage instability and reduces bias-temperature instability, leading to devices that are more reliable and maintain their performance over longer periods.\n\nAnother major benefit is enhanced electrical performance. This includes higher carrier mobility, meaning electrons can move faster through the semiconductor, leading to quicker response times and more efficient operation. It also results in lower off-state currents, reducing power consumption, and a better subthreshold swing, indicating superior transistor switching characteristics.\n\nFurthermore, this innovation contributes to higher manufacturing yields. By reducing defects and variability caused by inconsistent oxygenation, manufacturers can produce more high-quality chips, leading to lower production costs. The method's compatibility with existing fabrication techniques also facilitates easier adoption, accelerating the integration of these benefits into new products. Overall, this technology paves the way for a new generation of high-performance, stable, and energy-efficient electronic devices.\n\nKeywords: key benefits, device stability, electrical performance, carrier mobility, manufacturing yields, energy efficiency, reliable electronics.","question":"What are the key benefits of the 'Method for Manufacturing Semiconductor Device'?"},{"answer":"The **Method for Manufacturing Semiconductor Device** distinguishes itself from prior art through its innovative and indirect approach to oxygen management in oxide semiconductors. Earlier methods often involved direct oxygen plasma treatments, which could damage the sensitive semiconductor surface, or bulk annealing in oxygen atmospheres, which lacked precise control and uniformity, especially for complex device structures or temperature-sensitive substrates.\n\nSome prior art also explored direct ion implantation of oxygen into the semiconductor layer, but this often introduced lattice damage that required high-temperature annealing for repair, negating some of the benefits. The unique aspect of this patent is the strategic use of the *gate insulating film* as an oxygen reservoir. By implanting oxygen into this protective layer, the delicate oxide semiconductor is shielded from direct ion-induced damage.\n\nThe subsequent controlled diffusion of oxygen from the gate insulating film ensures a uniform and gentle oxygenation of the semiconductor layer. This indirect, precise, and damage-mitigating approach provides superior control over oxygen stoichiometry, leading to significantly better device stability and performance compared to the trade-offs and limitations inherent in previous manufacturing techniques. It represents a more refined and effective engineering solution.\n\nKeywords: prior art, competitive analysis, ion implantation, oxygen plasma, annealing, damage mitigation, unique advantages, semiconductor innovation.","question":"How is the 'Method for Manufacturing Semiconductor Device' different from prior art?"},{"answer":"The **Method for Manufacturing Semiconductor Device** is poised to significantly impact several high-growth industries that rely heavily on advanced semiconductor components. The most immediate and profound impact will be seen in the **Display Industry**. Oxide semiconductors are critical for high-resolution, power-efficient displays such as OLEDs and advanced LCDs. This patent's ability to enhance device stability and uniformity will lead to even more vibrant, reliable, and energy-saving screens for smartphones, tablets, TVs, and monitors, accelerating the adoption of flexible and transparent display technologies.\n\nAnother major beneficiary is the **Internet of Things (IoT) and Wearables sector**. These devices demand low-power, stable, and compact transistors for sensors and processors. The improved efficiency and reliability enabled by this manufacturing method will translate into longer battery life, more robust performance in diverse environments, and overall more dependable IoT ecosystems.\n\nFurthermore, industries exploring **Flexible Electronics**, **Transparent Electronics**, and potentially **Next-Generation Memory and Power Electronics** will find this innovation foundational. Its ability to produce high-quality oxide semiconductors at potentially lower thermal budgets broadens the scope of materials and substrates that can be used, unlocking new product categories and market opportunities across the entire electronics value chain.\n\nKeywords: industry impact, display industry, IoT, flexible electronics, transparent electronics, consumer electronics, automotive, semiconductor market.","question":"What industries will the 'Method for Manufacturing Semiconductor Device' impact?"},{"answer":"The **Method for Manufacturing Semiconductor Device** patent, identified as US-9852904, has a clear timeline regarding its filing and publication dates.\n\nThis patent was **filed on July 30, 2015**. The filing date marks the official submission of the patent application to the patent office, establishing the priority date for the invention. This date is crucial for determining the novelty and non-obviousness of the invention against prior art.\n\nSubsequently, the patent was **published on December 26, 2017**. The publication date typically signifies when the patent document becomes publicly accessible, allowing others to review the details of the invention. While 'granted' is not explicitly listed, the publication of a patent number (US-9852904) usually indicates that the patent has successfully moved through the examination process and has been granted, providing the patent holder with exclusive rights to the invention for a specified period.\n\nKeywords: filing date, publication date, patent timeline, patent application, US-9852904, intellectual property, patent grant.","question":"When was the 'Method for Manufacturing Semiconductor Device' filed/granted?"},{"answer":"The **Method for Manufacturing Semiconductor Device** has a wide array of commercial applications, primarily driven by its ability to produce high-performance, stable, and reliable oxide semiconductor devices. These applications span several lucrative sectors within the electronics industry.\n\nOne of the most significant commercial applications is in **advanced display technologies**. This includes the manufacturing of high-resolution OLED and LCD panels for smartphones, tablets, laptops, and large-screen televisions. The improved stability and uniformity of oxide TFTs (Thin-Film Transistors) enabled by this patent will lead to displays with better image quality, longer operational lifespans, and reduced power consumption, making them highly desirable in the consumer electronics market.\n\nAnother key area is the **Internet of Things (IoT) and wearable devices**. The enhanced reliability and energy efficiency of semiconductor components produced using this method are crucial for battery-powered sensors, smart home devices, and health trackers. These devices require consistent performance over extended periods in various environments. Furthermore, this innovation supports the development of **flexible and transparent electronics**, opening up commercial avenues for rollable displays, smart windows, and bendable circuits in fashion or automotive applications. The Method for Manufacturing Semiconductor Device is a foundational technology that underpins the quality and performance of countless electronic products.\n\nKeywords: commercial applications, display technology, OLED, IoT devices, flexible electronics, transparent electronics, consumer electronics, market applications.","question":"What are the commercial applications of the 'Method for Manufacturing Semiconductor Device'?"},{"answer":"The **Method for Manufacturing Semiconductor Device** lays a strong foundation for numerous future developments in semiconductor technology. One key area of expected advancement is the **integration with more complex device architectures**. As the industry moves towards 3D integration and heterogeneous integration, the precise control offered by this method will be crucial for stacking different materials and devices while maintaining performance and reliability.\n\nFurther developments may also focus on **optimizing the process for new oxide semiconductor materials**. While effective for current materials, research will likely explore how this oxygen management technique can be adapted and enhanced for emerging oxide compositions with even higher mobility or specialized properties. This could involve fine-tuning ion implantation parameters and annealing conditions for novel material systems.\n\nAdditionally, we can anticipate advancements in **in-situ monitoring and feedback control systems** for the manufacturing process. Integrating real-time sensors to monitor oxygen diffusion and material properties during fabrication could lead to even more precise and adaptive control, further boosting yields and performance. Ultimately, the Method for Manufacturing Semiconductor Device is expected to become a cornerstone for creating increasingly sophisticated, reliable, and energy-efficient electronic devices that will power the innovations of tomorrow across all sectors.\n\nKeywords: future developments, 3D integration, heterogeneous integration, new materials, process optimization, in-situ monitoring, semiconductor roadmap, advanced electronics.","question":"What are the future developments expected for the 'Method for Manufacturing Semiconductor Device'?"}],"topics":["semiconductor manufacturing","oxide semiconductor","ion implantation","chip fabrication","device stability","relentless","march","semiconductor"],"tech_cluster":null},"seo":{"title":"Method for Manufacturing Semiconductor Device - Patent US-9852904","description":"Discover the Method for Manufacturing Semiconductor Device patent (US-9852904) for enhancing chip performance. Learn how precise oxygen control revolutionizes oxide semiconductor stability and efficiency.","keywords":["semiconductor manufacturing","oxide semiconductor","ion implantation","chip fabrication","device stability","channel formation","patent US-9852904","electronics innovation","high-performance chips","semiconductor technology","oxygen vacancies","thin-film transistors"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852904","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852904","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9852904). https://patentable.app/patents/US-9852904","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852904","json":"https://patentable.app/api/llm-context/US-9852904","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:36:23.943Z"}