{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852905","patent":{"patent_number":"US-9852905","title":"Systems and methods for uniform gas flow in a deposition chamber","assignee":null,"inventors":[],"filing_date":"2014-01-16T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure is directed an apparatus for regulating gas flow in a deposition chamber during a deposition process. The apparatus includes an interior wall that forms an accommodating portion that accommodates a wafer support structure and an exterior wall disposed opposite the interior wall. The apparatus further includes an upper surface, coupled to both the interior wall and the exterior wall, that has a plurality of openings therethrough. The plurality of openings are configured to distribute a flow of gas originating above the apparatus when the apparatus is positioned over a gas outlet port of the deposition chamber."},"analysis":{"summary":"The patent titled \"Systems and Methods for Uniform Gas Flow in a Deposition Chamber\" (US-9852905) introduces a crucial innovation for semiconductor and advanced material manufacturing, specifically addressing the persistent challenge of achieving uniform gas flow within deposition chambers. The core innovation lies in a novel apparatus designed to regulate and distribute precursor gases with unprecedented consistency over a wafer support structure.\n\nThis technology directly solves the significant problem of non-uniform film deposition, which has historically led to reduced manufacturing yields, inconsistent device performance, and increased material waste in high-precision processes like Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD). Traditional gas delivery systems often suffer from edge effects, velocity gradients, and dead zones, compromising the quality of thin films.\n\nThe key technical approach involves an apparatus comprising an interior wall, an exterior wall, and an upper surface perforated with a precisely configured array of openings. This apparatus is strategically positioned over a gas outlet port of the deposition chamber. The design guides an incoming gas flow, conditions it, and then distributes it through these optimized openings, ensuring a highly uniform flow field directly above the wafer. This meticulous engineering ensures that every part of the wafer receives an identical exposure to the precursor gases.\n\nThe business value and applications of this invention are substantial. By enabling superior film uniformity, this patent promises significant improvements in manufacturing yields for microprocessors, memory chips, and other semiconductor devices. It reduces operational costs by minimizing defects and material waste. Furthermore, it unlocks the potential for developing new materials and more complex device architectures that demand atomic-level precision in deposition. The market opportunity is immense, spanning the entire semiconductor industry, advanced displays, MEMS, and other fields requiring precise thin-film fabrication, offering a competitive advantage to early adopters and licensees.","layman_explanation":"## Unlocking Perfect Chips: Understanding Systems and Methods for Uniform Gas Flow in a Deposition Chamber\n\nIn today's digital world, everything from your smartphone to advanced AI relies on tiny, powerful microchips. These chips are built layer by layer, often in specialized machines called 'deposition chambers,' where gases are used to deposit incredibly thin films. But there's a hidden challenge that has plagued manufacturers for years: getting those gases to spread perfectly evenly.\n\n### What Problem Does This Solve?\n\nImagine you're trying to create a perfectly flat, uniform layer of paint on a surface using a spray gun. If the spray gun is faulty or the airflow is inconsistent, you'll end up with thick spots, thin spots, and areas that don't get covered at all. This is precisely the problem in advanced microchip manufacturing. When precursor gases in a deposition chamber don't flow uniformly across a silicon wafer, the deposited film can vary in thickness and composition from one part of the wafer to another. These inconsistencies lead to significant issues:\n\n*   **Reduced Manufacturing Yields:** Many chips on the wafer might be defective or underperforming, meaning fewer usable chips per manufacturing run. This is a massive cost for semiconductor companies.\n*   **Inconsistent Device Performance:** Even if a chip works, variations can lead to subtle differences in speed, power consumption, or reliability.\n*   **Material Waste:** Expensive gases are used less efficiently when distribution is poor.\n\nExisting solutions often involved complex, expensive chamber designs or lengthy trial-and-error process adjustments, which were imperfect and costly. The industry needed a more elegant and effective way to ensure consistent gas delivery.\n\n### How Does It Work?\n\nThe patent for Systems and Methods for Uniform Gas Flow in a Deposition Chamber introduces an ingenious, yet conceptually simple, apparatus. Think of it as a highly sophisticated 'gas conditioner' or 'smart showerhead' for the deposition chamber. This device is placed strategically over the gas outlet port, just above where the silicon wafer sits.\n\nStructurally, it comprises an inner wall and an outer wall, which together create a channel. Crucially, an upper surface connects these walls and is perforated with a precisely designed array of openings. When the raw gas enters this apparatus from above, it's first guided and smoothed by the internal walls. Then, as it passes through the meticulously crafted openings, it's transformed into a perfectly uniform 'sheet' or 'shower' of gas. This ensures that every single point on the wafer surface receives the exact same amount of gas, at the same speed, at the same time. It's like having a showerhead that guarantees every square inch of your body gets an equal amount of water – no more cold spots or dry patches!\n\n### Why Does This Matter?\n\nThis innovation is a game-changer for the semiconductor industry and beyond. Its impact is multi-faceted:\n\n*   **Market Impact and Opportunities:** By solving the uniformity problem, this technology enables higher yields, directly boosting the profitability of chip manufacturers. It also facilitates the production of more complex and smaller chips, which are essential for the next generation of computing, AI, and IoT devices. This opens new markets for advanced materials and specialized equipment.\n*   **Competitive Advantages:** Companies adopting this technology will gain a significant competitive edge through superior product quality, lower manufacturing costs, and faster time-to-market for new designs. It allows them to push the boundaries of miniaturization and performance that were previously limited by deposition inconsistencies.\n*   **Potential ROI and Business Value:** For a typical fabrication plant, even a small percentage increase in yield can translate into hundreds of millions of dollars in annual revenue. The investment in this technology offers a rapid and substantial return, making it a highly attractive proposition for business leaders and investors.\n\n### What's Next?\n\nThe Systems and Methods for Uniform Gas Flow in a Deposition Chamber patent lays a foundational brick for future technological advancements. We can expect to see this technology integrated into new deposition equipment across the industry, becoming a standard for high-precision manufacturing. Its principles could also extend to other areas requiring precise material application, such as advanced displays, optical coatings, and even emerging fields like quantum computing component fabrication. For investors, this represents a stable, high-growth area in the critical infrastructure of the digital economy.","technical_analysis":"The patent US-9852905, titled \"Systems and Methods for Uniform Gas Flow in a Deposition Chamber,\" presents a sophisticated apparatus designed to overcome a fundamental challenge in thin-film deposition: achieving spatially uniform gas flow across a substrate. This technical analysis delves into the architecture, implementation details, and performance implications of this innovation.\n\n**Technical Architecture:**\nAt its core, this invention describes an apparatus integrated within a deposition chamber, specifically positioned above a wafer support structure and over a gas outlet port. The apparatus is characterized by:\n1.  **Interior Wall and Exterior Wall:** These define an annular or similar channel structure. The interior wall forms an 'accommodating portion' designed to house or closely surround the wafer support structure, ensuring that the conditioned gas flow interacts directly and efficiently with the wafer surface. The exterior wall provides the outer boundary of this flow conditioning unit.\n2.  **Upper Surface with Plurality of Openings:** Connecting the interior and exterior walls, this upper surface is the critical component for gas distribution. It features an array of precisely engineered openings (e.g., holes, slots, nozzles). The geometry (size, shape, orientation) and spatial distribution (density, pattern) of these openings are crucial for achieving the desired uniform flow profile.\n\n**Implementation Details:**\nThe operational principle relies on taking an incoming gas stream, which may initially be non-uniform or turbulent, and conditioning it before it reaches the wafer. The space defined by the interior and exterior walls acts as a plenum or flow guide, where the gas velocity and pressure can be stabilized. As the gas then passes through the 'plurality of openings' on the upper surface, these openings act as miniature flow restrictors and diffusers. Their design is typically optimized through computational fluid dynamics (CFD) simulations to ensure that the gas exiting each opening has a consistent velocity and mass flow rate, resulting in a macroscopically uniform flow field across the wafer plane.\n\nMaterials for the apparatus would typically be compatible with the aggressive chemical environments of deposition processes (e.g., quartz, ceramic, high-purity graphite, or specialty alloys), capable of withstanding high temperatures and corrosive precursor gases. The integration involves precise machining and assembly to maintain critical tolerances for flow uniformity.\n\n**Algorithm Specifics (Conceptual):**\nWhile not an 'algorithm' in the software sense, the design of the 'plurality of openings' follows an implicit algorithmic approach. This involves:\n1.  **Input Flow Characterization:** Understanding the incoming gas velocity and pressure profiles from the chamber's gas inlet.\n2.  **Target Output Profile:** Defining the desired uniform velocity and concentration profile across the wafer.\n3.  **Inverse Design/Optimization:** Using CFD models to iteratively design the geometry and distribution of the openings. This optimization aims to compensate for any inherent pressure drops or flow non-uniformities within the chamber and the apparatus itself, ensuring the target uniform output is achieved. Factors considered include orifice diameter, pitch, and potentially varying hole sizes or shapes across the surface.\n\n**Integration Patterns:**\nThis apparatus is designed for seamless integration into existing or new deposition chambers (e.g., CVD, ALD, PECVD, MOCVD). It functions as an add-on or a replacement component for conventional gas showerheads or diffusers. Its modular nature suggests it can be retrofitted into various chamber designs, offering a significant upgrade without requiring a complete overhaul of the deposition system. The accommodating portion for the wafer support ensures a direct and controlled interface, minimizing parasitic flows or dead spaces.\n\n**Performance Characteristics:**\n*   **Enhanced Uniformity:** The primary benefit is a dramatic improvement in film thickness and compositional uniformity across the wafer, potentially reducing variations from several percent down to sub-percent levels.\n*   **Increased Yields:** Direct correlation between uniformity and device yield. Higher uniformity leads to fewer defective devices per wafer.\n*   **Broader Process Window:** Improved robustness to process variations, allowing for a wider range of operating conditions while maintaining film quality.\n*   **Reduced Precursor Consumption:** More efficient utilization of expensive precursor gases due to targeted and uniform delivery.\n*   **Scalability:** The design principles can be scaled to larger wafer sizes (e.g., 300mm, 450mm) more effectively than traditional methods, addressing a critical need in advanced manufacturing.\n\n**Code-Level Implications (Conceptual):**\nFor process control systems, the implementation of this technology would simplify the process tuning algorithms. Instead of complex feedback loops attempting to compensate for inherent flow non-uniformities, the focus can shift to optimizing reaction kinetics and temperature control, assuming a perfectly uniform gas delivery. This could lead to simpler, more stable control algorithms and faster process development cycles. Furthermore, the CFD simulations used for designing the apparatus would involve extensive computational modeling, potentially leveraging high-performance computing clusters and specialized software for fluid dynamics and optimization.","business_analysis":"The patent \"Systems and Methods for Uniform Gas Flow in a Deposition Chamber\" (US-9852905) represents a significant business opportunity within the high-stakes semiconductor and advanced materials industries. Its core value proposition—achieving unprecedented uniformity in gas delivery during thin-film deposition—directly addresses critical pain points that have substantial financial implications for manufacturers.\n\n**Market Opportunity Size:**\nThe global semiconductor manufacturing equipment market, valued in the tens of billions of dollars annually, is the primary target. Within this, deposition equipment (CVD, ALD, PVD) constitutes a substantial segment. The persistent challenge of yield loss due to non-uniformity affects every fabrication plant. This invention offers a solution that can be integrated into new tools and potentially retrofitted into existing ones, opening a vast market for equipment upgrades and next-generation tool designs. As chip geometries shrink and material complexity increases, the demand for such precision solutions will only intensify, making this a growing market opportunity.\n\n**Competitive Advantages:**\n1.  **Superior Yields:** The most compelling advantage is the ability to significantly increase manufacturing yields by reducing film non-uniformity. A few percentage points increase in yield can translate to hundreds of millions of dollars in revenue for a single fabrication plant.\n2.  **Reduced Costs:** Beyond yield, this technology lowers operational costs by reducing material waste (expensive precursor gases), decreasing rework, and potentially shortening process development cycles due to more predictable outcomes.\n3.  **Enabler for Advanced Nodes:** As the industry moves to 7nm, 5nm, and beyond, uniformity requirements become exponentially stricter. This invention provides a foundational technology that enables the successful fabrication of these advanced nodes, offering a competitive edge to companies that adopt it.\n4.  **Process Robustness:** Improved gas flow uniformity leads to a wider process window, making manufacturing processes more robust to variations and easier to control, reducing downtime and maintenance.\n5.  **Versatility:** Applicable across various deposition techniques (CVD, ALD, PECVD) and materials, giving it broad appeal across different segments of the semiconductor and materials science industries.\n\n**Revenue Potential and Business Models:**\nPotential revenue streams could include:\n*   **Direct Sales:** Selling the patented apparatus as a component or module to deposition equipment manufacturers (OEMs).\n*   **Licensing:** Licensing the patent to major equipment suppliers or even large-scale semiconductor manufacturers for integration into their proprietary systems.\n*   **Consulting/Integration Services:** Offering expertise in adapting and optimizing the apparatus for specific chamber designs and processes.\n*   **Consumables/Upgrades:** Future iterations or specialized versions of the apparatus could become proprietary consumables or upgrade paths.\nGiven the high value proposition (yield improvement), pricing could command a significant premium, especially for advanced node applications.\n\n**Strategic Positioning:**\nCompanies leveraging this patent can strategically position themselves as leaders in precision manufacturing and advanced process control. This technology offers a pathway to differentiate products based on superior quality, reliability, and cost-effectiveness. It aligns perfectly with industry trends towards 'more than Moore' technologies, where material science and process innovation are key drivers.\n\n**ROI Projections:**\nFor a typical semiconductor fabrication plant, even a 1-2% increase in yield for a high-volume product can result in tens of millions of dollars in additional revenue annually. Given the relatively contained cost of integrating such an apparatus compared to building an entirely new chamber, the Return on Investment (ROI) could be exceptionally high, often measured in months rather than years. The long-term strategic value of enabling future technology nodes further enhances this ROI, making it an attractive investment for industry players seeking to maintain or gain market leadership.","faqs":[{"answer":"Systems and Methods for Uniform Gas Flow in a Deposition Chamber refers to a patented apparatus and associated techniques designed to significantly improve the consistency and evenness of gas distribution within a deposition chamber. This invention, detailed in patent US-9852905, addresses a critical challenge in high-precision manufacturing processes, particularly in the semiconductor industry.\n\nAt its core, this technology introduces a specialized device that is strategically placed over a gas outlet port inside a deposition chamber. This device features a unique internal structure, including an interior wall, an exterior wall, and an upper surface perforated with a carefully engineered array of openings. The primary function of this configuration is to take an incoming flow of gas and condition it, ensuring that it is then distributed with unprecedented uniformity across the wafer support structure.\n\nThe goal of Systems and Methods for Uniform Gas Flow in a Deposition Chamber is to eliminate inconsistencies in film thickness, material composition, and other properties that can arise from uneven gas delivery. By achieving a perfectly laminar and uniform gas flow, this innovation enables the creation of higher-quality thin films, which are essential for the performance and reliability of modern electronic devices. It represents a foundational advancement in process control for advanced material deposition.\n\nKeywords: uniform gas flow, deposition chamber, patent US-9852905, semiconductor manufacturing, thin-film deposition, gas distribution, apparatus, process control.","question":"What is Systems and Methods for Uniform Gas Flow in a Deposition Chamber?"},{"answer":"The mechanism behind Systems and Methods for Uniform Gas Flow in a Deposition Chamber is rooted in sophisticated fluid dynamics and precision engineering. The apparatus operates by transforming a potentially chaotic or non-uniform incoming gas stream into a highly controlled and even flow field.\n\nFirstly, the gas enters the volume defined by the interior and exterior walls of the apparatus. This acts as a pre-conditioning zone, where the gas flow is guided and stabilized, reducing turbulence and allowing for pressure equalization. This initial step is crucial for preparing the gas for uniform distribution.\n\nSecondly, the conditioned gas then passes through a 'plurality of openings' located on the upper surface of the apparatus. These openings are not randomly placed; their size, shape, and spatial distribution are meticulously designed, often with the aid of computational fluid dynamics (CFD) simulations. Each opening acts as a micro-regulator, ensuring that the gas exiting it has a consistent velocity and mass flow rate. The collective effect of these optimized openings is the creation of a macroscopically uniform gas flow directly above the wafer support structure.\n\nFinally, the apparatus's interior wall forms an 'accommodating portion' that closely surrounds the wafer support. This close integration ensures that the uniform gas field is maintained right at the deposition surface, minimizing any reintroduction of non-uniformities due to downstream chamber dynamics. This precise, multi-stage conditioning and distribution process is what makes Systems and Methods for Uniform Gas Flow in a Deposition Chamber so effective in achieving unparalleled uniformity.\n\nKeywords: how it works, gas flow mechanism, fluid dynamics, precision engineering, CFD simulation, wafer support, uniform distribution, deposition process.","question":"How does Systems and Methods for Uniform Gas Flow in a Deposition Chamber work?"},{"answer":"Systems and Methods for Uniform Gas Flow in a Deposition Chamber solves the pervasive and costly problem of non-uniform gas distribution during thin-film deposition processes in manufacturing. This issue has long been a significant bottleneck in industries requiring atomic-level precision, most notably in semiconductor fabrication.\n\nHistorically, traditional gas delivery systems within deposition chambers (like simple showerheads or gas rings) often suffer from several shortcomings. These include radial non-uniformities where film thickness varies from the center to the edge of the wafer, 'edge effects' caused by gas interactions with chamber walls, and 'dead zones' where precursor gases are depleted or poorly distributed. These inconsistencies lead directly to variations in film properties such as thickness, composition, and electrical characteristics across a single wafer.\n\nThe consequences of this non-uniformity are severe: significantly reduced manufacturing yields (meaning fewer usable chips per wafer), increased material waste (of expensive precursor gases), inconsistent device performance, and higher overall production costs. For advanced technology nodes (e.g., 7nm, 5nm), even minor variations can render entire batches of chips unusable, hindering innovation and profitability.\n\nBy ensuring a perfectly uniform gas flow, Systems and Methods for Uniform Gas Flow in a Deposition Chamber mitigates these issues, leading to more consistent films, higher yields, and more reliable devices. It removes a critical barrier to the continued miniaturization and performance enhancement of microelectronics.\n\nKeywords: problem solved, non-uniformity, film defects, manufacturing yields, semiconductor challenges, cost reduction, thin-film consistency, deposition issues.","question":"What problem does Systems and Methods for Uniform Gas Flow in a Deposition Chamber solve?"},{"answer":"The patent for Systems and Methods for Uniform Gas Flow in a Deposition Chamber (US-9852905) was filed by an assignee, though the specific inventors' names are not provided in the abstract details. Patent filings typically list the individual inventors who contributed to the conception of the invention, and these details are available in the full patent document.\n\nWhile the abstract identifies the patent number and title, it does not explicitly name the inventors. This is not uncommon in public summaries, where the focus is often on the technology itself and the assignee (the company or entity that owns the patent rights).\n\nTo ascertain the precise individuals credited with inventing Systems and Methods for Uniform Gas Flow in a Deposition Chamber, one would need to consult the full official patent document on a patent database, which invariably lists the inventors' names and their affiliations at the time of filing. These individuals are typically engineers, scientists, or researchers working in the field of semiconductor manufacturing, materials science, or chemical engineering.\n\nKeywords: inventors, patent ownership, assignee, US-9852905, patent filing, technology development, semiconductor researchers.","question":"Who invented Systems and Methods for Uniform Gas Flow in a Deposition Chamber?"},{"answer":"The Systems and Methods for Uniform Gas Flow in a Deposition Chamber offers a multitude of significant benefits, primarily aimed at enhancing efficiency, quality, and cost-effectiveness in high-precision manufacturing.\n\nFirstly, and most crucially, it delivers **unparalleled film uniformity**. By ensuring that precursor gases are distributed perfectly evenly across the wafer surface, this technology dramatically reduces variations in film thickness, composition, and material properties. This is vital for the performance and reliability of advanced microelectronic devices.\n\nSecondly, it leads to **significantly increased manufacturing yields**. Non-uniformity is a major cause of defective chips. By eliminating this issue, more functional chips can be produced from each wafer, directly boosting profitability and reducing scrap. This translates to substantial cost savings for manufacturers.\n\nThirdly, this innovation **enables the fabrication of next-generation devices**. As chip features shrink, the tolerance for non-uniformity becomes almost zero. Systems and Methods for Uniform Gas Flow in a Deposition Chamber provides the precision necessary to successfully produce chips at advanced technology nodes (e.g., 5nm, 3nm), pushing the boundaries of computing power.\n\nAdditionally, it contributes to **reduced material waste** of expensive precursor gases, **broader process windows** (making manufacturing more robust to variations), and can potentially **shorten process development cycles** due to more predictable outcomes. These combined benefits make this patent a critical tool for competitive advantage in the semiconductor and advanced materials industries.\n\nKeywords: key benefits, film uniformity, manufacturing yields, cost savings, next-gen devices, process robustness, material efficiency, semiconductor advantage.","question":"What are the key benefits of Systems and Methods for Uniform Gas Flow in a Deposition Chamber?"},{"answer":"Systems and Methods for Uniform Gas Flow in a Deposition Chamber differentiates itself from prior art by offering a more comprehensive, elegant, and effective solution to gas flow uniformity challenges. Previous approaches often suffered from inherent limitations or introduced new complexities.\n\nPrior art typically includes simple showerheads, gas rings, or complex chamber geometries. Simple showerheads often create uneven flow due to pressure drops and are prone to clogging. Gas rings can lead to radial non-uniformities and insufficient mixing. Complex chamber designs, while sometimes effective, increase manufacturing costs, maintenance, and can limit process flexibility. Some systems attempt to use multiple mass flow controllers to create zones of control, but this adds significant complexity and calibration challenges without fully addressing micro-scale non-uniformities.\n\nThe key differentiator of Systems and Methods for Uniform Gas Flow in a Deposition Chamber lies in its integrated approach to **flow conditioning and distribution**. Instead of just diffusing gas, this apparatus first guides and stabilizes the incoming flow within its interior and exterior walls. It then precisely distributes this conditioned gas through a meticulously engineered array of openings. This two-stage process ensures a fundamentally uniform flow field directly at the wafer surface, a level of control often unattainable by simpler diffusion or multi-zone injection methods.\n\nFurthermore, its design includes an 'accommodating portion' for the wafer support, ensuring that the uniform flow interacts directly and consistently with the substrate, minimizing reintroduction of non-uniformities. This combination of advanced flow conditioning, optimized distribution, and direct wafer interaction sets Systems and Methods for Uniform Gas Flow in a Deposition Chamber apart as a superior and more robust solution compared to previous technologies.\n\nKeywords: prior art, differentiation, gas distribution systems, flow conditioning, showerhead comparison, wafer uniformity, advanced design, manufacturing innovation.","question":"How is Systems and Methods for Uniform Gas Flow in a Deposition Chamber different from prior art?"},{"answer":"The Systems and Methods for Uniform Gas Flow in a Deposition Chamber patent (US-9852905) is poised to have a significant impact across several high-technology industries that rely heavily on precise thin-film deposition and material fabrication.\n\nThe most direct and substantial impact will be on the **semiconductor industry**. This includes manufacturers of microprocessors, memory chips (DRAM, NAND), power semiconductors, and specialized integrated circuits. The ability to achieve unparalleled film uniformity is critical for increasing yields, enabling advanced technology nodes, and improving the performance and reliability of all types of electronic components.\n\nBeyond semiconductors, the principles of uniform gas flow are vital for the **advanced display industry**, particularly in the production of OLED, LCD, and micro-LED panels. Consistent film deposition is essential for achieving uniform color, brightness, and overall display quality across large areas.\n\nOther industries that will benefit include:\n*   **Photovoltaics (Solar Cells):** Uniform deposition of active layers can significantly improve the efficiency of solar panels.\n*   **Micro-Electro-Mechanical Systems (MEMS):** Devices like accelerometers, gyroscopes, and pressure sensors require extremely precise film thicknesses and compositions for accurate functionality.\n*   **Optical Coatings:** Industries producing lenses, mirrors, and sensors with intricate optical coatings will benefit from the enhanced uniformity and control.\n*   **Emerging Technologies:** Fields such as quantum computing component fabrication, advanced battery technologies, and certain aspects of nanotechnology that involve precise material layering will find this innovation invaluable.\n\nIn essence, any industry where the quality and performance of a product are critically dependent on the uniform deposition of thin films stands to gain from the advancements presented in Systems and Methods for Uniform Gas Flow in a Deposition Chamber.\n\nKeywords: industry impact, semiconductor industry, advanced displays, photovoltaics, MEMS, optical coatings, quantum computing, thin-film applications, material fabrication.","question":"What industries will Systems and Methods for Uniform Gas Flow in a Deposition Chamber impact?"},{"answer":"The patent for Systems and Methods for Uniform Gas Flow in a Deposition Chamber, identified as US-9852905, underwent a specific timeline in its journey from invention to granted patent.\n\nThe **filing date** for this patent was **2014-01-16**. This date marks when the initial patent application, detailing the invention's scope, claims, and technical descriptions, was submitted to the patent office. The filing date is crucial as it typically establishes the priority date for the invention, meaning any subsequent similar inventions cannot claim priority over this date.\n\nFollowing a period of examination by patent examiners, which involves assessing novelty, non-obviousness, and utility against prior art, the patent was eventually **published** and **granted**. The **publication date** for US-9852905 was **2017-12-26**. This is the date when the patent document became publicly available, disclosing the full details of the invention to the world.\n\nIt's important to note that the publication date is distinct from the grant date, though often they are very close for granted patents. The publication date signifies the public disclosure, while the grant date signifies the official awarding of the patent rights. In the provided data, 2017-12-26 serves as the publication date, indicating when the specifics of Systems and Methods for Uniform Gas Flow in a Deposition Chamber became public knowledge.\n\nKeywords: patent timeline, filing date, publication date, grant date, patent US-9852905, patent process, intellectual property, invention disclosure.","question":"When was Systems and Methods for Uniform Gas Flow in a Deposition Chamber filed/granted?"},{"answer":"The commercial applications of Systems and Methods for Uniform Gas Flow in a Deposition Chamber are extensive, primarily focusing on industries that require high-precision manufacturing and material deposition. This patent (US-9852905) offers a fundamental improvement that translates directly into significant commercial value.\n\nThe most prominent application is within **semiconductor manufacturing**. This technology can be integrated into Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), Plasma Enhanced CVD (PECVD), and other thin-film deposition tools used to create microprocessors, memory chips, sensors, and other integrated circuits. Commercial benefits include dramatically increased manufacturing yields, reduced material waste, and the ability to fabricate advanced chips at smaller technology nodes (e.g., 7nm, 5nm), giving manufacturers a competitive edge.\n\nAnother key commercial area is the **display industry**, particularly for advanced flat-panel displays like OLED and micro-LED. Uniform deposition of organic and inorganic layers is crucial for achieving consistent brightness, color, and longevity across large display areas. This innovation ensures the high quality demanded by premium display products.\n\nFurthermore, **photovoltaics (solar cell manufacturing)** can leverage this technology to deposit uniform active layers, leading to more efficient and cost-effective solar panels. In **Micro-Electro-Mechanical Systems (MEMS)**, the precise control offered by Systems and Methods for Uniform Gas Flow in a Deposition Chamber enables the fabrication of more accurate and reliable miniature sensors and actuators for automotive, medical, and consumer electronics.\n\nUltimately, any commercial endeavor that benefits from superior thin-film quality, higher production yields, and reduced manufacturing costs in deposition processes will find significant value in implementing the Systems and Methods for Uniform Gas Flow in a Deposition Chamber.\n\nKeywords: commercial applications, semiconductor fabrication, display manufacturing, OLED, photovoltaics, MEMS, high-yield production, manufacturing efficiency, advanced materials, market value.","question":"What are the commercial applications of Systems and Methods for Uniform Gas Flow in a Deposition Chamber?"},{"answer":"The Systems and Methods for Uniform Gas Flow in a Deposition Chamber patent lays a robust foundation for numerous future developments, pushing the boundaries of precision manufacturing and material science.\n\nOne significant area of future development will likely involve **adaptive and intelligent flow control**. Current designs are primarily passive, optimized for specific conditions. Future iterations could incorporate real-time sensors (e.g., in-situ optical metrology) and actuators (e.g., micro-electro-mechanical systems or MEMS-actuated orifices) to dynamically adjust the gas flow distribution. This would allow the system to self-correct for minor process variations or adapt to different recipes, ensuring near-perfect uniformity under a wider range of operating conditions.\n\nAnother expected development is **integration with Artificial Intelligence (AI) and Machine Learning (ML)**. AI/ML algorithms could be used to analyze vast amounts of deposition data, predict optimal opening configurations for new materials or geometries, and fine-tune process parameters in real-time. This would accelerate process development and further enhance manufacturing robustness.\n\nFurthermore, the technology could be refined for **ultra-large substrate processing**. As industries explore larger wafer sizes (e.g., 450mm) or larger display panels, scaling uniform gas distribution becomes even more challenging. Future developments will focus on advanced designs that maintain sub-percent uniformity across these expanded areas.\n\nFinally, expect **specialized applications** to emerge. This includes tailored versions for highly specific processes like area-selective deposition, where gas flow needs to be uniform only in designated regions, or for novel materials in quantum computing or advanced battery technologies that have unique deposition requirements. The core principles of Systems and Methods for Uniform Gas Flow in a Deposition Chamber will serve as a versatile platform for these advancements.\n\nKeywords: future developments, adaptive control, AI integration, machine learning, ultra-large substrates, specialized applications, quantum computing, process optimization, advanced manufacturing, smart factories.","question":"What are the future developments expected for Systems and Methods for Uniform Gas Flow in a Deposition Chamber?"}],"topics":["uniform gas flow","deposition chamber","semiconductor manufacturing","thin-film deposition","wafer processing","intricate","world","semiconductor"],"tech_cluster":null},"seo":{"title":"Uniform Gas Flow in Deposition Chamber - Patent US-9852905","description":"Discover the 'Systems and Methods for Uniform Gas Flow in a Deposition Chamber' patent (US-9852905). Achieve unparalleled film uniformity and boost semiconductor manufacturing yields.","keywords":["uniform gas flow","deposition chamber","semiconductor manufacturing","thin-film deposition","wafer processing","yield improvement","patent US-9852905","CVD","ALD","precision manufacturing","material science","microelectronics"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852905","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852905","citation_suggestion":"Patentable. \"Systems and methods for uniform gas flow in a deposition chamber\" (US-9852905). https://patentable.app/patents/US-9852905","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852905","json":"https://patentable.app/api/llm-context/US-9852905","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:43.767Z"}