{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852906","patent":{"patent_number":"US-9852906","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-11-18T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":22,"abstract":"It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer."},"analysis":{"summary":"The **Method for Manufacturing Semiconductor Device** patent (US-9852906) introduces a critical innovation aimed at significantly enhancing the reliability and cost-effectiveness of semiconductor devices, particularly those incorporating thin film transistors (TFTs) with oxide semiconductor layers.\n\nThe core problem this patent addresses is the inherent instability and variable electrical characteristics often observed in oxide semiconductor materials. Impurities such as moisture and hydrogen, introduced during various manufacturing stages, can degrade device performance, lead to threshold voltage shifts, and ultimately shorten the operational lifespan of electronic components. Existing manufacturing methods struggled to consistently produce highly reliable oxide semiconductor devices at an economically viable scale.\n\nThis invention's key technical approach is a targeted heat treatment process, specifically designed for dehydration or dehydrogenation. By performing this heat treatment on the oxide semiconductor layer—which constitutes the channel formation, source, and drain regions of the TFT—the purity of the material is substantially improved. This purification effectively removes detrimental impurities, thereby stabilizing the intrinsic electrical characteristics of the semiconductor layer.\n\nThe business value and applications of this technology are profound. By enabling the production of more reliable semiconductor devices at a lower cost and with higher productivity, this patent can revolutionize sectors heavily reliant on TFTs, such as high-resolution displays (OLED, LCD), flexible electronics, and advanced sensor technologies. It offers manufacturers a competitive advantage through superior product quality and reduced production overheads.\n\nThe market opportunity for this method is substantial, spanning consumer electronics, automotive displays, medical devices, and industrial IoT. As the demand for stable, high-performance, and cost-efficient electronic components continues to grow, this patent provides a foundational technology for next-generation devices, promising to unlock new product capabilities and market segments.","layman_explanation":"## Making Electronics Last Longer and Cost Less: The Method for Manufacturing Semiconductor Device Explained for Business Professionals\n\n### 1. What Problem Does This Solve?\n\nImagine buying a new smartphone, a sleek TV, or a cutting-edge wearable device, only to find that its screen starts to flicker, colors fade, or its responsiveness declines after just a short period. This isn't just frustrating for consumers; it's a major headache for manufacturers and a significant cost center for businesses through warranty claims and damaged brand reputation. The core issue often lies in the tiny electronic components called thin film transistors (TFTs), especially those built with advanced materials known as oxide semiconductors. These materials, while offering great potential for brighter, thinner, and more flexible displays, are highly susceptible to microscopic impurities—like hidden moisture or hydrogen—introduced during their complex manufacturing process. These impurities act like tiny saboteurs, causing the transistors to behave unpredictably, leading to unstable performance and a shorter lifespan for the entire device. Existing production methods struggled to consistently eliminate these impurities without significantly driving up costs or slowing down production.\n\n### 2. How Does It Work?\n\nThe **Method for Manufacturing Semiconductor Device** patent (US-9852906) introduces a remarkably elegant yet powerful solution to this problem. Think of the oxide semiconductor layer in a TFT as a very delicate sponge. Over time, or during manufacturing, this sponge can absorb tiny bits of unwanted 'water' (moisture) or 'air' (hydrogen) that make it less effective at its job of controlling electricity. This invention proposes a special 'drying' or 'baking' process for this sponge. After the semiconductor layer is formed, it undergoes a controlled heat treatment, specifically designed to gently but effectively 'squeeze out' or evaporate these hidden impurities. It's not about burning the sponge, but rather creating the perfect conditions for the unwanted elements to leave, without damaging the essential structure of the material. This purification step is meticulously integrated into the manufacturing flow, ensuring that the semiconductor layer becomes exceptionally clean and stable before the device is completed. This makes the tiny transistors inside inherently more reliable, much like ensuring a foundation is solid before building a skyscraper.\n\n### 3. Why Does This Matter?\n\nThis innovation matters immensely for several reasons. Firstly, it directly translates to **enhanced product reliability and durability**. Devices built using this method will perform more consistently over their lifespan, reducing customer complaints and strengthening brand loyalty. For businesses, this means fewer returns, lower warranty costs, and a more positive market perception. Secondly, it offers significant **cost efficiencies and productivity gains**. By ensuring higher purity and stability from the outset, manufacturers can achieve higher yields—meaning more usable chips per production run—and reduce the need for expensive rework or quality control checks. This translates to lower per-unit costs and faster production cycles, which is a massive competitive advantage in high-volume electronics markets. Finally, this technology **unlocks new possibilities for innovation**. With inherently stable and cost-effective oxide TFTs, companies can confidently invest in developing next-generation products, such as truly flexible displays, robust IoT sensors for harsh environments, or advanced medical devices requiring uncompromising reliability. It shifts the focus from merely making devices to making *dependable* devices, which is a key differentiator in today's market.\n\n### 4. What's Next?\n\nThe impact of the **Method for Manufacturing Semiconductor Device** is poised to be widespread. We can expect to see its principles adopted across the display industry, leading to brighter, more stable, and longer-lasting screens in everything from smartphones and televisions to automotive dashboards and public signage. Beyond displays, its influence will extend to various sensor technologies, flexible electronics, and potentially even advanced power management circuits. The market adoption timeline will likely accelerate as manufacturers realize the tangible benefits in terms of cost savings and product quality. For investors, this patent highlights a critical underlying technology that can drive growth and profitability for companies positioned to leverage it, signaling a move towards a more robust and efficient future for semiconductor manufacturing.","technical_analysis":"The **Method for Manufacturing Semiconductor Device** patent (US-9852906) presents a crucial advancement in the fabrication of thin film transistors (TFTs), specifically targeting the enhancement of reliability and stability in devices utilizing oxide semiconductor layers. The technical architecture central to this invention is a TFT where the semiconductor layer, comprising the channel formation region, source region, and drain region, is composed of an oxide semiconductor material.\n\n**Technical Architecture and Material Focus:**\nAt its core, the invention focuses on the oxide semiconductor layer, which is the active component responsible for charge transport in the TFT. Common oxide semiconductors include Indium-Gallium-Zinc Oxide (IGZO), Zinc Oxide (ZnO), and Indium Oxide (In₂O₃). These materials are favored for their high electron mobility, optical transparency, and amenability to low-temperature processing, making them suitable for flexible electronics and advanced displays. However, their electrical characteristics are highly sensitive to impurities, particularly hydrogen and moisture, which can introduce donor states or trap sites, leading to device instability such as threshold voltage (Vth) shift and increased subthreshold swing.\n\n**Implementation Details: The Heat Treatment Process:**\nTo address this inherent instability, the patent describes a critical implementation step: a heat treatment for reducing impurities. This process is specifically termed 'dehydration' or 'dehydrogenation.' The goal is to thermally drive out or chemically convert moisture (H₂O) and hydrogen (H) species from within the bulk and surface of the oxide semiconductor layer. The precise parameters of this heat treatment—temperature, duration, and ambient atmosphere—are crucial for its effectiveness.\n\nTypically, such heat treatments involve heating the semiconductor device, or at least the relevant oxide layer, to elevated temperatures (e.g., 200°C to 450°C) in a controlled environment. A vacuum or an inert gas atmosphere (like dry nitrogen or argon) is often used to prevent re-incorporation of impurities. The elevated temperature provides the necessary activation energy for the desorption of loosely bound water molecules and the diffusion of hydrogen atoms out of the semiconductor lattice. Hydrogen, for instance, can form hydroxyl groups (OH) or bond with oxygen vacancies, acting as a shallow donor. Removing these species reduces the carrier concentration variability and minimizes charge trapping effects.\n\n**Algorithm Specifics and Performance Characteristics:**\nWhile the patent doesn't detail an explicit 'algorithm' in a software sense, the process can be seen as an optimized thermal annealing 'algorithm' for material purification. The 'algorithm' involves:\n1.  **Preparation:** Forming the oxide semiconductor layer and defining the TFT structure.\n2.  **Heat Treatment:** Subjecting the device to specific temperature profiles and durations.\n3.  **Cooling:** Controlled cooling to lock in the purified state.\n\nThe performance characteristics achieved through this method are significant:\n*   **Improved Purity:** Direct reduction of H₂O and H content in the oxide semiconductor layer.\n*   **Enhanced Electrical Stability:** A more stable Vth, reduced hysteresis, and improved subthreshold characteristics, leading to consistent device operation over time.\n*   **Increased Reliability:** Devices are less susceptible to degradation from environmental factors or prolonged operation.\n*   **Higher Yields:** Greater uniformity in electrical characteristics across manufactured devices, improving overall production yield.\n\n**Integration Patterns and Code-Level Implications:**\nFrom an integration perspective, this heat treatment can be seamlessly incorporated into existing semiconductor manufacturing lines, typically as a post-deposition or post-patterning annealing step. It doesn't necessitate a complete overhaul of the fabrication process but rather an optimization of a specific thermal budget. For design engineers, the implications are profound: they can design circuits with tighter tolerances, knowing that the underlying TFTs will exhibit predictable and stable electrical performance. This reduces the need for complex compensation circuits or extensive calibration, simplifying design and potentially enabling higher integration densities. While there are no direct 'code-level implications' for software, the enhanced hardware stability directly supports more robust firmware and application development, as the underlying hardware behaves more predictably.","business_analysis":"The **Method for Manufacturing Semiconductor Device** patent (US-9852906) presents a compelling business proposition by addressing fundamental challenges in semiconductor manufacturing: reliability, cost, and productivity. This innovation, focused on purifying oxide semiconductor layers in thin film transistors (TFTs), unlocks significant market opportunities and strategic advantages.\n\n**Market Opportunity Size:**\nThe market for semiconductor devices, particularly those incorporating advanced display technologies and IoT components, is vast and growing. Oxide semiconductor TFTs are critical for high-resolution displays (OLED, LCD, micro-LED), flexible electronics, wearable devices, and various sensors. The global display panel market alone is projected to reach hundreds of billions of dollars, with a significant portion relying on TFT backplanes. The ability to produce more reliable and cost-effective oxide TFTs directly impacts this massive market, allowing for deeper penetration into existing segments and the creation of entirely new ones, such as truly robust flexible devices or long-lasting automotive displays. The Method for Manufacturing Semiconductor Device targets a foundational improvement that spans multiple high-growth segments.\n\n**Competitive Advantages:**\nCompanies adopting this patented method stand to gain substantial competitive advantages:\n1.  **Superior Product Quality:** Offering devices with inherently more stable electrical characteristics and higher reliability sets products apart in a crowded market. This translates to lower warranty claims, enhanced brand reputation, and greater customer satisfaction.\n2.  **Cost Efficiency:** By improving the purity of the oxide semiconductor layer, the manufacturing process yields higher rates of functional devices. Reduced rework, fewer discarded units, and potentially simpler circuit designs due to stable components lead to significant cost reductions per unit.\n3.  **Increased Productivity:** The described heat treatment, when optimized, can be integrated efficiently into existing fabrication lines, leading to higher throughput and faster time-to-market for new products.\n4.  **Enabling Innovation:** The enhanced reliability of oxide TFTs removes a major bottleneck for designers, allowing them to push the boundaries of performance and form factor in next-generation products, from ultra-thin displays to high-performance flexible sensors.\n\n**Revenue Potential:**\nThe revenue potential is driven by several factors: increased sales of higher-quality devices, licensing opportunities for the patented technology, and reduced operational expenditures. Manufacturers can command premium pricing for superior reliability or gain market share through cost leadership. Furthermore, the ability to enter specialized markets requiring extreme reliability (e.g., medical, aerospace) that were previously inaccessible due to material instability can open new, high-margin revenue streams.\n\n**Business Models:**\nThis patent supports various business models:\n*   **Direct Manufacturing:** Companies can integrate this method into their own fabrication facilities to produce superior semiconductor components or finished devices.\n*   **Licensing:** The patent holder can license the technology to other semiconductor manufacturers, generating royalty revenues.\n*   **Foundry Services:** Foundries offering manufacturing services can incorporate this process to provide a 'premium' tier of oxide TFT fabrication, attracting clients seeking high reliability.\n*   **Partnerships:** Collaborations with material suppliers or equipment manufacturers could lead to optimized heat treatment systems and materials tailored for this process.\n\n**Strategic Positioning:**\nStrategically, this innovation allows companies to position themselves as leaders in reliable, high-performance oxide semiconductor technology. It shifts the competitive paradigm from merely achieving high performance to ensuring consistent, long-term performance. This aligns with broader industry trends emphasizing sustainability, durability, and a reduced total cost of ownership for electronic products.\n\n**ROI Projections:**\nThe return on investment (ROI) for implementing this method can be substantial. Reduced defect rates, improved yields, and enhanced product lifespan directly impact the bottom line. For a manufacturer, even a few percentage points increase in yield can translate to millions in savings and increased revenue. Furthermore, the intangible benefits of a stronger brand reputation for reliability and the ability to innovate faster will provide long-term strategic value.","faqs":[{"answer":"The **Method for Manufacturing Semiconductor Device** (US-9852906) is a patented innovation in semiconductor fabrication. It describes a novel process primarily focused on enhancing the reliability and stability of semiconductor devices that incorporate thin film transistors (TFTs) using oxide semiconductor layers.\n\nAt its core, the invention addresses the challenge of impurities, such as moisture and hydrogen, which can degrade the electrical characteristics of these semiconductor materials. By introducing a specific heat treatment, the patent aims to purify the oxide semiconductor layer, ensuring the TFTs exhibit stable and consistent performance.\n\nThis technology is crucial for improving the quality and lifespan of a wide range of electronic products, from high-resolution displays to advanced sensors, by providing a more robust foundational component. It represents a significant step forward in making electronic devices more durable and cost-effective to produce.","question":"What is Method for Manufacturing Semiconductor Device?"},{"answer":"The **Method for Manufacturing Semiconductor Device** works by implementing a targeted purification step during the fabrication of thin film transistors (TFTs) that use oxide semiconductor layers. The key mechanism is a specialized heat treatment process, which can be for either dehydration or dehydrogenation.\n\nDuring this heat treatment, the oxide semiconductor layer—which forms the active channel, source, and drain regions of the TFT—is subjected to controlled elevated temperatures. This thermal energy causes impurities like moisture (H₂O) and hydrogen (H) atoms to desorb and diffuse out of the semiconductor material. These impurities are known to create defects or donor states that lead to electrical instability in the TFTs.\n\nBy effectively removing these detrimental substances, the intrinsic purity and electronic properties of the oxide semiconductor layer are significantly improved. This results in TFTs that exhibit stable electrical characteristics, meaning they perform consistently over time without degradation, which is critical for long-lasting and reliable electronic devices. This approach ensures that the fundamental building blocks of the device are as clean and stable as possible.","question":"How does Method for Manufacturing Semiconductor Device work?"},{"answer":"The **Method for Manufacturing Semiconductor Device** solves a critical problem in the semiconductor industry: the inherent instability and unreliability of thin film transistors (TFTs) made with oxide semiconductor layers. Historically, these materials, while offering many advantages like high electron mobility and transparency, have been prone to performance degradation due to internal impurities.\n\nSpecifically, moisture and hydrogen atoms, often introduced during manufacturing, can act as electrical defects within the oxide semiconductor. These defects cause the TFTs to exhibit unstable electrical characteristics, such as shifts in threshold voltage (Vth), leading to inconsistent device operation, flickering displays, or reduced responsiveness over time. This instability not only shortens the lifespan of electronic devices but also increases manufacturing costs due to lower yields and the need for extensive quality control.\n\nThis patent provides a solution by purifying the oxide semiconductor layer, thereby eliminating these performance-robbing impurities and ensuring the production of highly reliable and stable semiconductor devices at a lower cost and with higher productivity. It fundamentally enhances the quality of the core components in modern electronics.","question":"What problem does Method for Manufacturing Semiconductor Device solve?"},{"answer":"The patent data for **Method for Manufacturing Semiconductor Device** (US-9852906) does not list specific inventors or an assignee in the provided abstract. However, patents are typically filed by individuals or teams of inventors, and then often assigned to a company or research institution. This is a common practice in the semiconductor industry, where large corporations invest heavily in R&D and intellectual property.\n\nWithout specific names, it's generally understood that such innovations emerge from the collective efforts of experienced engineers and scientists working within advanced materials and device fabrication teams. These teams often aim to solve pressing industry challenges, such as improving device reliability and manufacturing efficiency, which this patent clearly addresses. The development of the Method for Manufacturing Semiconductor Device would have involved expertise in material science, physics, and semiconductor processing.","question":"Who invented Method for Manufacturing Semiconductor Device?"},{"answer":"The **Method for Manufacturing Semiconductor Device** offers several key benefits that are set to significantly impact the electronics industry:\n\nFirstly, and most importantly, it leads to **highly reliable semiconductor devices with stable electric characteristics**. By purifying the oxide semiconductor layer, the thin film transistors (TFTs) perform consistently over their operational lifespan, reducing issues like flickering screens or performance degradation.\n\nSecondly, the innovation enables **lower manufacturing costs and higher productivity**. Enhanced material purity means fewer defective components, leading to higher yields and reduced waste. This efficiency translates directly into cost savings for manufacturers, which can either be passed on to consumers or reinvested into further research and development.\n\nFinally, this method **unlocks new possibilities for advanced electronics**. With more reliable and cost-effective oxide TFTs, manufacturers can confidently develop next-generation products such as more durable flexible displays, robust IoT sensors, and high-performance computing components, pushing the boundaries of what electronic devices can achieve. The Method for Manufacturing Semiconductor Device ensures a stronger foundation for future tech.","question":"What are the key benefits of Method for Manufacturing Semiconductor Device?"},{"answer":"The **Method for Manufacturing Semiconductor Device** differentiates itself from prior art by offering a targeted and highly effective approach to purify oxide semiconductor layers, which is crucial for the stability of thin film transistors (TFTs). While prior art might have included general annealing steps or various passivation techniques, these often provided incomplete solutions to the problem of impurity-induced instability.\n\nMany conventional annealing processes aim at crystallizing amorphous layers or relieving stress, but they may not specifically or efficiently remove detrimental impurities like moisture and hydrogen. Some passivation layers, intended to protect the semiconductor, could even inadvertently introduce hydrogen. The innovation in this patent lies in a heat treatment explicitly designed for 'dehydration' or 'dehydrogenation' – a precise process to purge these specific performance-degrading contaminants.\n\nThis targeted purification ensures a more fundamental and lasting improvement in the intrinsic electrical characteristics of the oxide semiconductor, leading to superior and more consistent device reliability compared to less focused prior art methods. The Method for Manufacturing Semiconductor Device represents a strategic shift towards proactive impurity management at the core material level.","question":"How is Method for Manufacturing Semiconductor Device different from prior art?"},{"answer":"The **Method for Manufacturing Semiconductor Device** is poised to significantly impact several key industries that rely heavily on advanced semiconductor components, particularly those incorporating thin film transistors (TFTs) with oxide semiconductor layers.\n\n**Display Industry:** This includes manufacturers of smartphones, tablets, televisions (especially OLED and future micro-LED), computer monitors, and automotive displays. The patent's ability to produce highly reliable and stable TFTs will lead to brighter, more consistent, and longer-lasting screens, enhancing user experience and reducing warranty issues. It is critical for the development of flexible and foldable displays.\n\n**Internet of Things (IoT):** The growing ecosystem of connected devices, from smart home gadgets to industrial sensors, demands robust and durable components. The improved reliability offered by this method will enable IoT devices to operate more consistently and for longer periods, even in challenging environments.\n\n**Wearable Technology and Flexible Electronics:** For devices that bend, stretch, or conform to irregular surfaces, the underlying electronic components must be exceptionally stable. The Method for Manufacturing Semiconductor Device provides the foundational reliability needed for these next-generation products.\n\n**Medical Devices:** Precision and long-term stability are paramount in medical electronics. This innovation can contribute to more dependable diagnostic equipment and monitoring systems. Overall, the Method for Manufacturing Semiconductor Device will elevate the standard of reliability across a broad spectrum of electronic products.","question":"What industries will Method for Manufacturing Semiconductor Device impact?"},{"answer":"The **Method for Manufacturing Semiconductor Device** patent, identified by the number US-9852906, was filed on **2013-11-18** (November 18, 2013). This date marks when the application was submitted to the patent office, initiating the examination process.\n\nThe patent was subsequently granted and published on **2017-12-26** (December 26, 2017). The publication date signifies when the patent document became publicly available, detailing the invention's claims and specifications. The period between the filing and publication dates is typically when the patent office conducts its examination, including prior art searches and substantive review, to determine the patentability of the invention. The granting of the patent for the Method for Manufacturing Semiconductor Device signifies its recognized novelty and utility in the field of semiconductor manufacturing.","question":"When was Method for Manufacturing Semiconductor Device filed/granted?"},{"answer":"The commercial applications of the **Method for Manufacturing Semiconductor Device** are extensive and span multiple high-growth technology sectors, primarily driven by the enhanced reliability and cost-effectiveness it brings to semiconductor components.\n\n**High-Performance Displays:** This includes consumer electronics like smartphones, tablets, laptops, and televisions (especially those using OLED and micro-LED technologies), where stable and vibrant displays are crucial. Automotive displays, with their stringent reliability requirements, will also benefit significantly. The Method for Manufacturing Semiconductor Device enables the production of more durable and consistent screens.\n\n**Flexible and Foldable Electronics:** The improved stability of oxide thin film transistors (TFTs) is a game-changer for bendable devices such as foldable phones, rollable TVs, and wearable gadgets. This technology makes these advanced form factors commercially viable by ensuring their components can withstand physical stress without performance degradation.\n\n**Internet of Things (IoT) Devices:** From smart home appliances and industrial sensors to smart city infrastructure, IoT devices require long-lasting and reliable components that can operate consistently in various environments. This patent helps ensure the robustness of the semiconductor elements within these devices.\n\n**Advanced Sensors:** High-precision sensors used in medical devices, industrial monitoring, and autonomous systems demand unwavering accuracy and stability. The Method for Manufacturing Semiconductor Device provides the foundational reliability for such critical applications. Its broad applicability positions it as a key enabler for next-generation electronic products.","question":"What are the commercial applications of Method for Manufacturing Semiconductor Device?"},{"answer":"The **Method for Manufacturing Semiconductor Device** lays a robust foundation for numerous future developments in semiconductor manufacturing and electronics. As the industry continues to push boundaries, we can expect several key evolutions building upon this patent's principles.\n\nFirstly, there will likely be further **optimization of the heat treatment parameters**. This includes exploring even lower temperature processes compatible with highly sensitive flexible substrates, or more energy-efficient annealing techniques. Research might also focus on in-situ monitoring to precisely control impurity removal in real-time, enhancing process precision and yield.\n\nSecondly, the principles of targeted purification could extend to **novel semiconductor materials and device architectures**. As new materials emerge for TFTs, the core concept of impurity management via heat treatment could be adapted, ensuring their inherent stability from the outset. This could include 3D integrated circuits or more complex multi-layered structures.\n\nFinally, the enhanced reliability achieved by the Method for Manufacturing Semiconductor Device will **accelerate the commercialization of cutting-edge applications**. This includes truly pervasive transparent electronics, highly durable and responsive haptic interfaces, and advanced neuromorphic computing architectures that rely on stable, low-power components. The long-term vision is a world where electronic devices are not just powerful, but also consistently dependable, thanks to foundational innovations like this patent. This ensures the Method for Manufacturing Semiconductor Device remains relevant and impactful for years to come.","question":"What are the future developments expected for Method for Manufacturing Semiconductor Device?"}],"topics":["semiconductor device manufacturing","oxide semiconductor","thin film transistor","TFT reliability","device stability","technical","method","manufacturing"],"tech_cluster":null},"seo":{"title":"Method for Manufacturing Semiconductor Device - Patent US-9852906","description":"Discover the Method for Manufacturing Semiconductor Device patent: a breakthrough in creating highly reliable semiconductor devices with stable electrical characteristics at lower cost.","keywords":["semiconductor device manufacturing","oxide semiconductor","thin film transistor","TFT reliability","device stability","cost-effective semiconductor","heat treatment purification","dehydration dehydrogenation","electronics innovation","patent US-9852906","Method for Manufacturing Semiconductor Device"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852906","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9852906). https://patentable.app/patents/US-9852906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852906","json":"https://patentable.app/api/llm-context/US-9852906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:34:59.288Z"}