{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852907","patent":{"patent_number":"US-9852907","title":"Mask structure forming method and film forming apparatus","assignee":null,"inventors":[],"filing_date":"2017-03-07T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate; and subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten."},"analysis":{"summary":"The patent titled \"Mask Structure Forming Method and Film Forming Apparatus\" introduces a sophisticated two-step chemical process for fabricating highly precise and durable etching mask structures, essential for advanced semiconductor manufacturing. The core innovation lies in its ability to integrate tungsten, a material known for its excellent etch resistance, directly into a pre-formed film structure.\n\nThe primary problem this invention addresses is the increasing difficulty in creating uniform, defect-free, and robust etching masks as semiconductor feature sizes continue to shrink. Traditional deposition methods often result in masks with limitations in durability, uniformity, and selectivity, leading to higher defect rates and manufacturing costs in nanoscale fabrication.\n\nThe key technical approach involves first forming an intermediate film on an insulating layer. This intermediate film is primarily composed of silicon, carbon, nitrogen, and hydrogen. Subsequently, a second process gas containing a tungsten compound is introduced. This gas facilitates a chemical reaction where some of the silicon atoms within the intermediate film are selectively replaced by tungsten atoms. This replacement mechanism, rather than simple layering, ensures a more homogeneous and integrated tungsten film, offering superior structural integrity and performance.\n\nThe business value and applications of the Mask Structure Forming Method and Film Forming Apparatus are substantial. This technology promises to enhance manufacturing yields by producing more reliable and precise masks, thereby reducing material waste and rework. It enables the fabrication of smaller, more powerful, and energy-efficient integrated circuits, crucial for industries like high-performance computing, artificial intelligence, and advanced mobile devices. Companies adopting this method could gain a significant competitive advantage in producing next-generation electronic components.\n\nThe market opportunity for this innovation is vast, aligning with the global demand for continued miniaturization and performance enhancement in electronics. As semiconductor fabrication pushes towards sub-10nm nodes, the need for advanced mask technologies becomes critical. The Mask Structure Forming Method and Film Forming Apparatus provides a scalable and precise solution to meet these evolving requirements, positioning it as a key enabler for future technological advancements in microelectronics.","layman_explanation":"### What Problem Does This Solve?\n\nIn the world of advanced electronics, making computer chips is like building incredibly intricate cities on a minuscule scale. Each chip has billions of tiny pathways and components, and to create them, manufacturers use a process called etching. This involves 'drawing' patterns onto a silicon wafer using a temporary stencil, or 'mask,' and then chemically removing parts of the wafer not covered by the stencil. The challenge is that as chips get smaller and more powerful, the lines drawn on them become incredibly fine—sometimes just a few atoms wide. Traditional stencils often aren't precise enough, or they wear out too quickly during the etching process, leading to blurry lines, defects, and wasted chips. This not only drives up costs but also limits how small and powerful our devices can become. The Mask Structure Forming Method and Film Forming Apparatus patent directly addresses these critical limitations, aiming to create stencils that are both incredibly precise and exceptionally durable.\n\n### How Does It Work?\n\nThink of this innovation as a smarter way to build that temporary stencil. Instead of just painting a layer on top, this technology builds the stencil from the inside out, making it stronger and more accurate. It's a two-stage process:\n\n1.  **Building the Foundation Layer:** First, a special kind of 'primer' film is created directly on the silicon wafer's insulating layer. This primer is made from a mix of silicon, carbon, nitrogen, and hydrogen. It's like laying down a flexible, receptive foundation that's designed to be transformed.\n2.  **Integrating Super-Strong Material:** Here's where the magic happens. Instead of just adding another layer on top, a unique gas containing tungsten is introduced. Tungsten is a very hard, dense metal—think of it as a super-strong building material. This gas doesn't just stick to the surface; it chemically reacts with the primer film, specifically replacing some of the silicon atoms within that film with tungsten atoms. It's like taking out some of the softer bricks in your foundation and replacing them with much tougher, more durable ones, without disturbing the overall structure. The result is a stencil material that's not just coated with tungsten, but has tungsten integrated throughout its structure, making it incredibly resilient and precise.\n\n### Why Does This Matter?\n\nThis innovation matters immensely for the future of technology and business. By creating etching masks that are far more precise and durable, the Mask Structure Forming Method and Film Forming Apparatus enables manufacturers to produce chips with even finer features and higher quality. This means:\n\n*   **Faster, More Powerful Devices:** Chips can be designed with more transistors packed into a smaller space, leading to faster processing speeds and greater capabilities for everything from smartphones to artificial intelligence servers.\n*   **Reduced Manufacturing Costs:** Fewer defects during the etching process mean higher yields (more good chips per wafer), which significantly reduces manufacturing waste and costs for semiconductor companies.\n*   **Competitive Advantage:** Companies that adopt this technology can gain a significant edge in the market, offering leading-edge products that outperform competitors. It's a key enabler for pushing the boundaries of Moore's Law.\n*   **New Market Opportunities:** The ability to produce such advanced chips opens doors for entirely new applications and industries, fueling innovation in areas we might not even imagine yet.\n\n### What's Next?\n\nThis patent lays a crucial foundation for the next generation of microchip manufacturing. We can expect to see this technology, or variations of it, adopted by leading semiconductor foundries and equipment suppliers looking to stay competitive in the race for smaller, more efficient chips. Its principles could also inspire new material science breakthroughs in other high-tech sectors requiring atomic-level precision. Ultimately, the Mask Structure Forming Method and Film Forming Apparatus is a testament to the continuous innovation required to power our increasingly digital world, promising a future of even more advanced and integrated electronics.","technical_analysis":"The patent \"Mask Structure Forming Method and Film Forming Apparatus\" introduces a novel and technically sophisticated method for fabricating etching-purpose mask structures, critical for advanced semiconductor manufacturing. This invention addresses the persistent challenge of achieving high precision, uniformity, and durability in mask layers, especially as feature sizes shrink to nanoscale dimensions.\n\n**Technical Architecture and Process Flow:**\nThe core of this innovation is a two-step chemical film formation process executed on an insulating film, typically silicon oxide (SiO2), which is already present on a substrate. The process can be conceptualized as follows:\n\n1.  **Intermediate Film Formation:** A first process gas is supplied onto the insulating film. This gas contains precursors for silicon, carbon, nitrogen, and hydrogen. Through a controlled chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD) like process, an intermediate film is formed. This film is characterized by its primary components: silicon, carbon, nitrogen, and hydrogen (SiCNH). The precise composition and density of this SiCNH layer are crucial, as it serves as the foundational matrix for the subsequent material transformation. The choice of SiCNH allows for tunable properties, including density and chemical reactivity, which are essential for the subsequent selective replacement step.\n\n2.  **Tungsten Film Formation via Silicon Replacement:** Following the formation of the intermediate SiCNH film, a second process gas is introduced. This gas specifically contains a compound of tungsten (e.g., WF6, W(CO)6, etc.). The critical mechanism here is a selective chemical reaction where tungsten atoms from the process gas replace some of the silicon atoms already constituting the intermediate SiCNH film. This is a form of chemical substitution or atomic exchange rather than a simple additive deposition. The tungsten precursor reacts with the silicon within the SiCNH matrix, forming a tungsten-integrated film. The remaining carbon, nitrogen, and hydrogen components likely play a role in stabilizing the film structure and facilitating the replacement reaction.\n\n**Implementation Details and Algorithm Specifics:**\nThe precise control over the gas flow rates, temperature, pressure, and plasma parameters (if PECVD is used) during both steps is paramount. The partial pressures of the precursor gases for Si, C, N, H in the first step determine the composition and morphology of the intermediate film. In the second step, the tungsten precursor's partial pressure, reaction temperature, and exposure time directly influence the extent and uniformity of silicon replacement by tungsten. This 'algorithm' for material transformation ensures that the tungsten is not merely deposited on the surface but is chemically integrated into the film's bulk structure.\n\n**Performance Characteristics and Technical Advantages:**\n*   **Enhanced Etch Resistance:** Tungsten is known for its high density and excellent resistance to plasma etching. By integrating tungsten directly into the mask, this method produces a mask structure that can withstand aggressive etching environments for longer durations, crucial for high-aspect-ratio patterning.\n*   **Superior Uniformity:** The chemical replacement mechanism, as opposed to surface-limited deposition, can lead to more uniform material distribution within the film, reducing critical dimension (CD) variations across the wafer.\n*   **Improved Adhesion and Structural Integrity:** Integrating tungsten into an existing SiCNH matrix can result in better adhesion to the underlying insulating film and superior internal structural integrity, mitigating issues like delamination, cracking, or stress-induced defects common in multi-layered mask stacks.\n*   **Tunable Properties:** The ability to control the extent of silicon replacement by tungsten, through process parameter adjustments, offers a pathway to tune the film's properties (e.g., density, hardness, stress) for specific etching applications.\n\n**Code-Level Implications (Material Science Context):**\nWhile not 'code' in a software sense, the invention's principles inform material design and process optimization. It suggests a move towards 'atomic engineering' where materials are modified in-situ rather than just grown layer-by-layer. This impacts computational materials science, where simulations could predict optimal precursor chemistries and reaction kinetics for efficient silicon-tungsten exchange. Furthermore, the characterization techniques (e.g., XPS, TEM, EDX) required to verify the successful replacement and uniform distribution of tungsten would be critical in process development and quality control.\n\nThis technology represents a significant advancement in material science for microfabrication. By offering a precise and robust method for forming etching masks, the Mask Structure Forming Method and Film Forming Apparatus provides a critical enabler for the continued scaling of semiconductor devices and the development of next-generation electronic components.","business_analysis":"The patent \"Mask Structure Forming Method and Film Forming Apparatus\" represents a significant advancement in semiconductor manufacturing, poised to generate substantial business value and market opportunities. As the industry continues its relentless pursuit of miniaturization and performance enhancement, innovations in microfabrication, particularly in etching mask technology, become critical enablers for future growth.\n\n**Market Opportunity Size:**\nThe global semiconductor market is a multi-trillion-dollar industry, with fabrication equipment and materials constituting a substantial segment. The etching mask market, a subset of this, is directly tied to the overall growth of integrated circuits. As chip designs push towards sub-7nm and even sub-5nm nodes, the demand for ultra-precise and durable masks is skyrocketing. This patent directly addresses this high-value, high-growth niche. Its ability to improve yield and enable advanced node manufacturing means it taps into the core revenue streams of leading chipmakers (e.g., Intel, TSMC, Samsung) and equipment suppliers (e.g., Applied Materials, Lam Research).\n\n**Competitive Advantages:**\nThis innovation offers several distinct competitive advantages:\n\n1.  **Superior Performance:** The tungsten-integrated mask structures offer enhanced etch resistance and uniformity compared to traditional methods. This translates to higher fidelity in pattern transfer, reduced critical dimension (CD) variability, and ultimately, better performing chips.\n2.  **Increased Yield:** By producing more robust and precise masks, the technology can significantly reduce defect rates during etching, leading to higher manufacturing yields. This directly impacts profitability for semiconductor foundries, where yield is a primary driver of cost efficiency.\n3.  **Process Simplification (Potential):** While involving two steps, the chemical replacement mechanism might simplify overall process flows by reducing the need for multiple material layers or complex post-deposition treatments required for traditional masks to achieve similar performance.\n4.  **Enabler for Advanced Nodes:** This technology is particularly valuable for manufacturing at advanced technology nodes (e.g., 7nm, 5nm, and beyond) where existing mask materials struggle to meet the stringent requirements for precision and durability.\n\n**Revenue Potential and Business Models:**\nRevenue generation could stem from multiple avenues:\n\n*   **Licensing:** The primary model would likely involve licensing the patented technology to major semiconductor equipment manufacturers and integrated device manufacturers (IDMs).\n*   **Material Supply:** Development and sale of specialized precursor gases (for both intermediate film and tungsten replacement) could be a significant revenue stream.\n*   **Consulting/Integration Services:** Offering expertise in integrating this new mask formation method into existing fabrication lines.\n\nThe value proposition of reduced manufacturing costs (due to higher yields) and the ability to produce higher-performing chips will command significant licensing fees and material premiums.\n\n**Strategic Positioning:**\nCompanies that adopt or license this technology will be strategically positioned at the forefront of advanced microfabrication. This patent allows them to differentiate their offerings in a highly competitive market, providing a pathway to produce chips that are faster, more power-efficient, and capable of higher transistor densities. It reinforces their leadership in innovation and helps secure critical intellectual property in key manufacturing processes. This is not just an incremental improvement; it's a foundational technology that could enable future generations of electronic devices.\n\n**ROI Projections:**\nWhile specific numbers depend on adoption rates and market penetration, the ROI for implementing this technology could be substantial. A 1-2% increase in yield for a leading-edge fab can translate to hundreds of millions of dollars in annual revenue. Reduced R&D cycles due to fewer mask-related challenges, faster time-to-market for new chip designs, and the ability to command premium prices for higher-performing devices would further bolster ROI. This patent offers a compelling investment case for players within the semiconductor ecosystem seeking to enhance their manufacturing capabilities and maintain a competitive edge.","faqs":[{"answer":"The Mask Structure Forming Method and Film Forming Apparatus (U.S. Patent US-9852907) is a groundbreaking invention in the field of semiconductor manufacturing. It describes a novel, two-step chemical process for creating highly precise and durable etching mask structures on an insulating film, typically found on semiconductor substrates.\n\nThis technology is critical for microfabrication, which involves crafting the incredibly tiny circuits that power modern electronics. The patent's core innovation lies in its unique approach to material integration, moving beyond traditional layering techniques to a more sophisticated method of material transformation.\n\nEssentially, the Mask Structure Forming Method and Film Forming Apparatus provides a superior way to make the 'stencils' (masks) used to 'draw' the microscopic patterns on computer chips, ensuring greater accuracy and resilience during the manufacturing process. This directly contributes to the development of smaller, faster, and more efficient electronic devices.","question":"What is Mask Structure Forming Method and Film Forming Apparatus?"},{"answer":"The Mask Structure Forming Method and Film Forming Apparatus operates through a two-stage chemical process, distinguishing it from conventional film formation methods. First, an intermediate film is created on an insulating layer of the substrate. This intermediate film is specifically composed of silicon, carbon, nitrogen, and hydrogen (SiCNH).\n\nSubsequently, in the second step, a specialized process gas containing a tungsten compound is introduced into the reaction chamber. The ingenuity of this patent lies here: instead of merely depositing a layer of tungsten, the tungsten compound gas facilitates a chemical reaction that selectively replaces some of the silicon atoms already present within the pre-formed SiCNH intermediate film with tungsten atoms.\n\nThis atomic-level replacement mechanism ensures that tungsten, a material known for its exceptional hardness and etch resistance, is integrated directly into the bulk structure of the film. The resulting tungsten-integrated film then serves as an ultra-robust and precise etching mask, capable of withstanding aggressive etching processes while maintaining high pattern fidelity.","question":"How does Mask Structure Forming Method and Film Forming Apparatus work?"},{"answer":"The Mask Structure Forming Method and Film Forming Apparatus tackles a critical and escalating problem in advanced semiconductor manufacturing: the challenge of creating highly uniform, defect-free, and durable etching masks for nanoscale features. As integrated circuits continue to shrink to single-digit nanometer dimensions, the demands on these masks become immense. Traditional mask formation methods often suffer from several limitations.\n\nThese include insufficient etch selectivity, where the mask degrades too quickly during plasma etching; poor uniformity, leading to inconsistent circuit patterns; and mechanical instability, which can cause pattern collapse or distortion. Such issues result in lower manufacturing yields, increased production costs, and ultimately, a bottleneck in developing next-generation, high-performance electronic devices. By offering a method for producing masks with superior properties, this invention directly mitigates these long-standing obstacles, enabling the continued miniaturization and performance enhancement of microchips.","question":"What problem does Mask Structure Forming Method and Film Forming Apparatus solve?"},{"answer":"The patent US-9852907 for Mask Structure Forming Method and Film Forming Apparatus does not explicitly list the inventors or assignee in the provided data. However, patents are typically filed by individuals or research teams and then assigned to companies or institutions that own the intellectual property. These entities are usually major players in the semiconductor industry, advanced materials science, or specialized equipment manufacturing.\n\nSuch innovations often emerge from dedicated research and development efforts within leading technology companies, universities, or national laboratories that are at the forefront of microfabrication and materials science. The development of the Mask Structure Forming Method and Film Forming Apparatus reflects a deep understanding of chemical reactions at the atomic level and the practical challenges of high-volume semiconductor production.","question":"Who invented Mask Structure Forming Method and Film Forming Apparatus?"},{"answer":"The Mask Structure Forming Method and Film Forming Apparatus offers several significant benefits that are crucial for advancing semiconductor technology. Firstly, it provides **ultra-high precision** in mask formation, leading to sharper, more accurate circuit patterns and reduced critical dimension (CD) variations, which is vital for sub-10nm chip designs. Secondly, the integration of tungsten through atomic replacement results in **enhanced durability and etch resistance**. This means the masks can withstand more aggressive plasma etching processes for longer durations, improving the reliability of pattern transfer and enabling the creation of high-aspect-ratio features.\n\nThirdly, this method contributes to **higher manufacturing yields** by minimizing defects caused by mask degradation or non-uniformity, thereby reducing waste and lowering production costs for chipmakers. Lastly, the innovation fosters **advanced materials integration**, allowing for the precise incorporation of high-performance materials like tungsten directly into the film structure, which is a key enabler for next-generation microelectronics and novel device architectures. These combined benefits position the Mask Structure Forming Method and Film Forming Apparatus as a transformative technology in microfabrication.","question":"What are the key benefits of Mask Structure Forming Method and Film Forming Apparatus?"},{"answer":"The Mask Structure Forming Method and Film Forming Apparatus fundamentally differs from prior art in its approach to material integration for etching mask formation. Traditional methods primarily rely on direct deposition techniques, such as Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD), to layer materials like amorphous carbon, silicon nitride, or other metals onto the substrate. These additive processes often create distinct interfaces between layers and can struggle with achieving perfect uniformity, stress control, and atomic-level integration.\n\nIn contrast, this patent introduces a unique two-step process centered on **atomic replacement**. It first forms an intermediate SiCNH film, which acts as a receptive matrix. The key difference is the subsequent step where tungsten atoms *replace* silicon atoms within this existing matrix, rather than simply being deposited on top or as a separate layer. This 'in-situ' transformation leads to a more homogeneous and intrinsically integrated film, eliminating many interfacial issues and enhancing the bulk properties of the mask. This distinct chemical pathway provides superior control over material composition and structure, surpassing the capabilities of conventional deposition-only techniques in terms of precision, durability, and uniformity.","question":"How is Mask Structure Forming Method and Film Forming Apparatus different from prior art?"},{"answer":"The Mask Structure Forming Method and Film Forming Apparatus will primarily impact the **semiconductor manufacturing industry**, which forms the backbone of all modern electronics. Its direct application in creating advanced etching masks will benefit companies involved in chip fabrication, including integrated device manufacturers (IDMs) like Intel and Samsung, as well as pure-play foundries like TSMC.\n\nBeyond direct manufacturing, the innovation will have ripple effects across various high-tech sectors. It will enable advancements in **high-performance computing (HPC)**, **artificial intelligence (AI)**, and **data centers** by allowing for the production of more powerful and efficient processors. The technology will also accelerate progress in **consumer electronics** (smartphones, laptops, wearables) and **automotive electronics** (autonomous driving systems, advanced infotainment). Furthermore, its principles could influence **advanced materials science** and **nanotechnology**, potentially opening doors for novel applications in areas like micro-electromechanical systems (MEMS), advanced sensors, and even new energy solutions requiring precise thin-film engineering. The Mask Structure Forming Method and Film Forming Apparatus is a foundational technology with broad implications for digital innovation.","question":"What industries will Mask Structure Forming Method and Film Forming Apparatus impact?"},{"answer":"The patent for Mask Structure Forming Method and Film Forming Apparatus was filed on **March 7, 2017**. This marks the date when the application was officially submitted to the patent office, initiating the examination process to determine its novelty, non-obviousness, and utility.\n\nSubsequently, the patent was published on **December 26, 2017**, under the number US-9852907. The publication date signifies when the patent application became publicly accessible, allowing others to review the details of the invention. While the 'granted' date isn't explicitly provided, the publication date indicates its official recognition as a disclosed invention. This timeline reflects the relatively swift process for this particular patent, highlighting its potential significance and readiness for industrial application within a short timeframe after filing.","question":"When was Mask Structure Forming Method and Film Forming Apparatus filed/granted?"},{"answer":"The commercial applications of the Mask Structure Forming Method and Film Forming Apparatus are extensive and directly tied to the advancement of microelectronics. Firstly, it will be crucial for the **manufacturing of next-generation microprocessors, memory chips (DRAM, NAND), and GPUs**, enabling higher transistor densities and improved performance for computing devices. This directly impacts the ability to develop more powerful AI accelerators, faster cloud infrastructure, and more capable consumer electronics.\n\nSecondly, the enhanced precision and durability of the masks will be invaluable for **advanced packaging technologies**, such as 3D stacking and heterogeneous integration, which rely on extremely fine and reliable interconnects. Thirdly, it will support the development of **high-resolution sensors and MEMS devices** used in automotive, medical, and IoT applications, where intricate patterns are essential for functionality. Lastly, the Mask Structure Forming Method and Film Forming Apparatus could find application in **specialized optoelectronic devices** and **quantum computing components** that demand atomic-level control over material structures. Its ability to improve manufacturing yields and reduce costs at advanced nodes makes it an attractive investment for any company seeking to maintain a competitive edge in the semiconductor market.","question":"What are the commercial applications of Mask Structure Forming Method and Film Forming Apparatus?"},{"answer":"Future developments stemming from the Mask Structure Forming Method and Film Forming Apparatus are likely to focus on optimizing and expanding its core principles. One key area will be the **refinement of precursor chemistries** for both the intermediate SiCNH film and the tungsten replacement process. This could involve exploring new compounds that allow for lower processing temperatures, faster reaction rates, or even greater selectivity in silicon-tungsten exchange.\n\nAnother direction for future development is **integration with emerging patterning technologies**, particularly Extreme Ultraviolet (EUV) lithography, which demands exceptionally precise and defect-free masks. Further research may explore how to fine-tune the material properties of the tungsten-integrated film (e.g., stress, density, electrical conductivity) for specific applications or for use as active device layers rather than just masks. The concept of atomic-level material replacement could also be **extended to integrate other high-performance metals or functional elements** into various thin-film structures, opening up novel applications beyond etching masks. Ultimately, the Mask Structure Forming Method and Film Forming Apparatus lays a robust foundation for continued innovation in atomic-scale material engineering, promising a future of even more sophisticated and integrated electronic devices.","question":"What are the future developments expected for Mask Structure Forming Method and Film Forming Apparatus?"}],"topics":["Mask Structure Forming Method and Film Forming Apparatus","semiconductor manufacturing","etching mask","film forming apparatus","tungsten film","relentless","march","towards"],"tech_cluster":null},"seo":{"title":"Mask Structure Forming Method and Film Forming Apparatus - Patent US-9852907","description":"Discover the Mask Structure Forming Method and Film Forming Apparatus, a patent revolutionizing etching mask creation. Learn how tungsten integration enables ultra-precision for next-gen chips.","keywords":["Mask Structure Forming Method and Film Forming Apparatus","semiconductor manufacturing","etching mask","film forming apparatus","tungsten film","silicon replacement","microfabrication","advanced materials","chip manufacturing","patent US-9852907","H01L","integrated circuits","thin film technology","precision etching"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852907","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852907","citation_suggestion":"Patentable. \"Mask structure forming method and film forming apparatus\" (US-9852907). https://patentable.app/patents/US-9852907","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852907","json":"https://patentable.app/api/llm-context/US-9852907","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:15:07.047Z"}