{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852910","patent":{"patent_number":"US-9852910","title":"Vertical power transistor with dual buffer regions","assignee":null,"inventors":[],"filing_date":"2017-05-09T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. A metal contact is then formed over the p+ layer. In another improvement, edge termination structures utilize p-dopants implanted in trenches to create deep p-regions for shaping the electric field, and shallow p-regions between the trenches for rapidly removing holes after turn-off. In another improvement, a dual buffer layer using an n-layer and distributed n+ regions improves breakdown voltage and saturation voltage. In another improvement, p-zones of different concentrations in a termination structure are formed by varying pitches of trenches. In another improvement, beveled saw streets increase breakdown voltage."},"analysis":{"summary":"The patent for a \"Vertical Power Transistor with Dual Buffer Regions\" (US-9852910) introduces a suite of significant improvements for vertical transistors, such as Insulated Gate Bipolar Transistors (IGBTs), aimed at enhancing their efficiency, reliability, and power handling capabilities. The core innovation lies in a sophisticated combination of structural and fabrication advancements.\n\nAt its heart, this invention solves the long-standing trade-off between breakdown voltage and saturation voltage in power devices. Existing vertical transistors often struggle to achieve both high voltage blocking capability and low on-state losses simultaneously. This patent addresses this by introducing a novel dual buffer layer that incorporates an n-layer and strategically distributed n+ regions, allowing for optimized electric field distribution and improved carrier dynamics, thereby boosting breakdown voltage while simultaneously reducing saturation voltage.\n\nThe key technical approach also includes a refined fabrication process for emitter structures, involving periodic highly-doped p-type emitter dots and a precise wet etch to expose the p+ layer for optimal metal contact. Furthermore, advanced edge termination structures are disclosed, utilizing p-dopants implanted in trenches to create deep p-regions for electric field shaping and shallow p-regions for rapid hole removal after turn-off. Variations in trench pitches enable different p-zone concentrations, and beveled saw streets further enhance breakdown voltage.\n\nThe business value and applications of this technology are substantial. It enables the creation of more robust, energy-efficient, and compact power modules. Industries such as electric vehicles, renewable energy (solar inverters, wind power), industrial motor drives, and power supply units will benefit from devices that offer superior performance, leading to reduced energy consumption, increased operational lifespan, and lower overall system costs. This innovation drives the next generation of high-power electronics.\n\nThe market opportunity for this technology is significant, given the global push towards electrification and sustainable energy. As demand for efficient power conversion grows across all sectors, this patent provides a foundational technology for manufacturers to develop leading-edge power semiconductors, securing a competitive advantage in a rapidly expanding market.","layman_explanation":"In today's electrically driven world, from the charging stations for electric vehicles to the inverters in solar farms, we rely on sophisticated electronic components to manage and convert power. At the heart of these systems are 'power transistors' – essentially high-speed switches that turn electricity on and off. The challenge has always been to make these switches handle very high electrical pressures (voltage) without breaking down, while also wasting as little energy as possible when they're 'on' (efficiency). This is where the \"Vertical Power Transistor with Dual Buffer Regions\" patent steps in, offering a significant leap forward.\n\n**1. What Problem Does This Solve?**\nImagine trying to design a water valve that can both withstand the immense pressure of a fire hose and allow water to flow through with almost no resistance when open. That's the challenge faced by engineers designing power transistors. Historically, improving a transistor's ability to withstand high voltage often meant making it less efficient, leading to more wasted energy as heat. Conversely, making it super-efficient at low voltage often meant it couldn't handle higher pressures without failing. This fundamental trade-off has limited the performance and reliability of power electronics, forcing designers to make compromises that impact everything from battery life in electric cars to the lifespan of industrial machinery. Additionally, the edges of these tiny switches are often weak points, prone to premature failure under stress.\n\n**2. How Does It Work?**\nThis patent doesn't offer a single fix, but rather a clever combination of improvements, much like upgrading several key parts of a complex machine to work better together. The core innovation lies in a special internal structure called a 'dual buffer layer.' Instead of a simple single layer, this invention uses two types of materials – an 'n-layer' and 'distributed n+ regions' – arranged in a highly optimized way. Think of it like a reinforced pipe: the n-layer provides the main strength against high pressure, while the n+ regions are like internal structural supports that help distribute the stress evenly, allowing the pipe to handle even higher pressures without becoming thicker (which would slow down water flow). This dual approach allows the transistor to simultaneously achieve a higher 'breakdown voltage' (handle more electrical pressure) and a lower 'saturation voltage' (waste less energy when 'on').\n\nBeyond the buffer layer, the patent also details improvements to the 'emitter' – the part of the transistor where electricity first enters. It uses periodic, highly-doped 'dots' rather than a uniform layer, ensuring a more efficient and controlled flow of electricity. Furthermore, the 'edge termination' – the protective structures around the perimeter of the transistor – are significantly enhanced. By implanting different types of materials in tiny trenches, the invention creates both 'deep' regions to shape the electrical field and prevent damage, and 'shallow' regions that act like sponges, quickly absorbing leftover electricity when the transistor switches off. This makes the device more robust and faster.\n\n**3. Why Does This Matter?**\nThis patent matters because it enables a new generation of power electronics that are fundamentally superior to what's currently available. For businesses, this translates into several key advantages:\n*   **Enhanced Performance:** Products built with this technology can handle more power with less energy loss, leading to more efficient systems. For instance, an electric vehicle using these transistors could potentially achieve a longer range on a single charge, or industrial motors could run cooler and require less electricity.\n*   **Increased Reliability:** The improved edge termination and robust design mean devices are less likely to fail prematurely, reducing maintenance costs, warranty claims, and downtime for critical equipment.\n*   **Smaller and Lighter Products:** The ability to handle more power in a smaller footprint allows for more compact and lighter power modules, crucial for applications where space and weight are at a premium, like consumer electronics or aerospace.\n*   **Competitive Edge:** Companies adopting this technology can differentiate their products in the market, offering superior solutions that meet the increasing demands for efficiency and reliability in a rapidly electrifying world.\n\n**4. What's Next?**\nThis invention lays a critical foundation for future advancements in power management. We can expect to see products incorporating this technology emerge in high-growth sectors such as electric vehicles, fast-charging infrastructure, advanced robotics, and grid-scale energy storage. As the global economy continues its transition towards electrification and sustainable energy, the demand for highly efficient and reliable power transistors will only grow. This patent positions its adopters to lead that charge, driving innovation and delivering tangible business value across diverse industries.","technical_analysis":"The patent for a \"Vertical Power Transistor with Dual Buffer Regions\" (US-9852910) details a series of architectural and fabrication innovations designed to significantly enhance the performance characteristics of vertical power transistors, notably IGBTs. This analysis will delve into the technical underpinnings, implementation details, and performance implications of this advanced semiconductor device.\n\n**Technical Architecture and Core Innovations:**\nAt the heart of this invention are three primary areas of improvement: the emitter structure, edge termination, and the buffer layer. The patent describes a novel emitter structure featuring periodic highly-doped p-type emitter dots formed on the top surface of a growth substrate. This departure from a uniform emitter is designed to optimize carrier injection and improve current density distribution, which is critical for minimizing on-state losses (Vce(sat)). The fabrication sequence involves initial growth, followed by grinding down the bottom surface of the substrate, and a precise wet etch to expose the heavily doped p+ layer, ensuring an ideal interface for the subsequent metal contact formation. This precise control over the emitter-base junction and contact resistance is crucial for efficient operation.\n\n**Dual Buffer Layer Implementation:**\nOne of the most impactful architectural elements is the dual buffer layer, which is a significant advancement over conventional single buffer layers. This patent specifies the use of an n-layer in conjunction with distributed n+ regions. The n-layer typically provides the bulk of the voltage blocking capability, contributing to the breakdown voltage (BV). The distributed n+ regions are strategically embedded within this layer. Their primary function is to modify the electric field profile within the drift region and influence the carrier lifetime. By carefully engineering the doping concentration and distribution of these n+ regions, the device can achieve a higher breakdown voltage without proportionally increasing the drift region thickness, which would otherwise lead to higher Vce(sat). Conversely, it allows for a lower Vce(sat) while maintaining a robust BV. This optimization is a complex semiconductor physics challenge, as BV and Vce(sat) often exhibit an inverse relationship. The dual buffer layer effectively decouples these parameters to a greater extent than prior art.\n\n**Advanced Edge Termination Structures:**\nEdge termination is critical for preventing premature breakdown at the device periphery. This patent introduces an innovative approach using p-dopants implanted in trenches. These trenches create deep p-regions that are instrumental in shaping the electric field at the device edges, spreading the equipotential lines and preventing localized electric field crowding. This is essential for maximizing the device's voltage blocking capability. Complementing these deep regions, shallow p-regions are formed between the trenches. These shallow regions are designed for rapid extraction of holes (minority carriers) during the turn-off transient. Efficient hole removal reduces tail current, thereby decreasing turn-off losses and improving switching speed. The patent further allows for the creation of p-zones of different concentrations by varying the pitches (spacing) of these trenches, providing an additional degree of freedom for fine-tuning the electric field distribution and carrier dynamics.\n\n**Performance Characteristics and Implications:**\nCollectively, these innovations lead to superior performance characteristics. The enhanced dual buffer layer directly contributes to a higher breakdown voltage, making the device suitable for more demanding high-power applications. The reduced saturation voltage translates to lower conduction losses, significantly improving overall energy efficiency. The optimized edge termination ensures higher reliability and robustness, reducing the likelihood of catastrophic failure. The faster turn-off characteristics, facilitated by efficient hole removal, enable higher switching frequencies, which is crucial for compact and high-performance power converters.\n\n**Integration Patterns and Future Directions:**\nThis technology provides a robust foundation for next-generation IGBTs and other vertical power devices. From an integration perspective, the precise fabrication methods described will require advanced semiconductor manufacturing techniques. The ability to fine-tune doping profiles and trench geometries implies sophisticated lithography and implantation processes. Engineers will find that this invention offers significant design flexibility, allowing for tailored devices optimized for specific applications, whether it's ultra-high voltage blocking or ultra-low on-state resistance. The implications extend to electric vehicle power trains, renewable energy inverters, industrial motor drives, and advanced power supply units, where the demand for higher power density and efficiency continues to grow. This patent represents a significant step towards achieving these ambitious goals in power electronics.","business_analysis":"The patent for a \"Vertical Power Transistor with Dual Buffer Regions\" (US-9852910) represents a pivotal advancement in power semiconductor technology with profound business implications. This innovation directly addresses critical performance bottlenecks in high-power applications, opening up substantial market opportunities and reshaping competitive landscapes.\n\n**Market Opportunity Size:**\nThe global power semiconductor market, valued at hundreds of billions of dollars, is experiencing robust growth driven by the electrification of transportation (electric vehicles, charging infrastructure), the expansion of renewable energy (solar, wind), and the increasing demand for energy-efficient industrial and consumer electronics. Vertical power transistors, particularly IGBTs, are at the core of these applications. This patent's ability to deliver superior breakdown voltage and lower saturation voltage positions it perfectly to capture significant share in this expanding market. The demand for high-performance, reliable, and efficient power modules is insatiable, and this technology directly caters to that need. Analysts project continued double-digit growth in segments reliant on high-voltage power switches, creating a multi-billion dollar opportunity for devices incorporating these innovations.\n\n**Competitive Advantages:**\nCompanies that adopt or license the technology described in the Vertical Power Transistor with Dual Buffer Regions patent will gain a substantial competitive edge. The ability to offer devices with simultaneously higher breakdown voltage and lower saturation voltage resolves a fundamental trade-off that has plagued prior art. This translates into products that are:\n1.  **More Efficient:** Reduced power losses directly lead to lower operating costs and improved energy conservation, a critical selling point in today's environmentally conscious market.\n2.  **More Reliable:** Enhanced edge termination and robust design minimize failure rates, leading to longer product lifespans and reduced warranty claims.\n3.  **More Compact:** Higher power density enables smaller, lighter power modules, crucial for space-constrained applications like EVs and portable power systems.\n4.  **Higher Performance:** Faster switching speeds and improved thermal management open doors to new, more demanding applications.\n\nThese advantages will allow manufacturers to differentiate their offerings, command premium pricing, and gain market share from competitors relying on less advanced technologies.\n\n**Revenue Potential and Business Models:**\nManufacturers of power semiconductor devices, power modules, and original equipment manufacturers (OEMs) in target industries stand to generate significant revenue. Business models could include:\n*   **Direct Sales:** Producing and selling advanced IGBTs and other vertical power transistors based on this patent.\n*   **Licensing:** Offering licenses to other semiconductor manufacturers, creating a lucrative royalty stream.\n*   **Integrated Solutions:** Developing complete power modules that leverage this technology, adding value beyond just the discrete component.\n\nThe improved performance and reliability offered by this patent can also enable entirely new product categories and market segments that were previously unfeasible due to technological limitations.\n\n**Strategic Positioning and ROI Projections:**\nStrategically, this patent allows companies to position themselves as leaders in high-performance power electronics. Investing in R&D and manufacturing capabilities aligned with the Vertical Power Transistor with Dual Buffer Regions ensures a future-proof product roadmap. The return on investment (ROI) for adopting this technology is expected to be high, driven by:\n*   **Increased Market Share:** Capturing new customers and segments due to superior product performance.\n*   **Cost Reductions:** Lower manufacturing costs through optimized processes and reduced material waste, coupled with fewer warranty claims.\n*   **Brand Enhancement:** Association with cutting-edge, environmentally friendly, and highly reliable technology.\n\nFor investors, this patent signals a strong potential for growth in companies focused on power semiconductors. The clear technical advantages translate directly into market leadership and sustained profitability in a critical and expanding global industry. The Vertical Power Transistor with Dual Buffer Regions is not just an engineering marvel; it's a strategic asset for the future of power.","faqs":[{"answer":"The Vertical Power Transistor with Dual Buffer Regions (US-9852910) is a patented innovation in power semiconductor technology, specifically targeting vertical transistors such as Insulated Gate Bipolar Transistors (IGBTs). At its core, this invention introduces a series of structural and fabrication improvements designed to enhance the performance of these devices. The primary goal is to overcome long-standing trade-offs between breakdown voltage (the maximum voltage a device can withstand) and saturation voltage (the voltage drop across the device when it's 'on,' indicating energy loss).\n\nThis patent proposes a sophisticated design that includes a novel dual buffer layer, advanced edge termination structures, and optimized emitter configurations. These elements work synergistically to allow power transistors to handle higher voltages with greater efficiency and reliability than traditional designs. It represents a significant step forward in the quest for more robust and energy-efficient power electronics.\n\nThe technology is poised to impact a wide range of high-power applications, providing a foundational improvement for systems where both high voltage handling and minimal energy loss are critical. This includes applications in electric vehicles, renewable energy systems, and industrial power management. The patent aims to make power devices more robust, efficient, and capable of operating under demanding conditions, thereby extending their lifespan and reducing overall system costs.\n\nKeywords: vertical power transistor, dual buffer regions, IGBT, power semiconductor, breakdown voltage, saturation voltage, energy efficiency, power electronics.","question":"What is Vertical Power Transistor with Dual Buffer Regions?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions works by integrating several key technical innovations that collectively optimize its electrical characteristics. Central to its operation is the novel dual buffer layer, which consists of an n-layer combined with strategically distributed n+ regions. This unique layering allows for precise control over the electric field distribution within the device, enabling it to withstand higher voltages while simultaneously minimizing energy losses during conduction.\n\nAdditionally, the patent details an improved emitter structure, where periodic highly-doped p-type emitter dots are formed. This design optimizes the injection of charge carriers, leading to more efficient current flow and further reducing on-state losses. The fabrication process also includes a precise wet etch to expose the heavily doped p+ layer, ensuring an optimal interface for metal contact and efficient carrier extraction.\n\nFurthermore, the invention incorporates advanced edge termination structures. These utilize p-dopants implanted in trenches to create deep p-regions for effective electric field shaping, preventing premature breakdown at the device edges. Shallow p-regions are also formed between these trenches to rapidly remove excess holes (charge carriers) after the transistor turns off, which significantly reduces switching losses and improves the device's speed and efficiency. These combined features allow the Vertical Power Transistor with Dual Buffer Regions to achieve superior performance by managing voltage, current, and carrier dynamics more effectively than prior art.\n\nKeywords: how it works, dual buffer layer, n-layer, n+ regions, emitter dots, edge termination, electric field shaping, carrier dynamics, switching losses.","question":"How does Vertical Power Transistor with Dual Buffer Regions work?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions primarily solves the long-standing engineering challenge of balancing breakdown voltage (BV) and saturation voltage (Vce(sat)) in power transistors. In conventional designs, improving a transistor's ability to withstand high voltages (higher BV) typically requires a thicker, less-doped internal region, which inevitably leads to higher energy losses when the device is conducting electricity (higher Vce(sat)). Conversely, reducing energy losses (lower Vce(sat)) often compromises the device's ability to handle high voltages, making it less robust.\n\nThis inherent trade-off has historically forced engineers to make difficult compromises, limiting the overall performance, efficiency, and reliability of power electronics. It impacts everything from the range and charging speed of electric vehicles to the efficiency of renewable energy systems and the longevity of industrial equipment. The patent directly addresses this by providing a design that can achieve both high breakdown voltage and low saturation voltage simultaneously.\n\nBeyond this core trade-off, the invention also tackles the problem of edge termination, which is crucial for preventing premature breakdown at the device's periphery. Traditional edge termination structures often struggle to effectively shape the electric field while also ensuring rapid removal of charge carriers during switching, leading to sub-optimal reliability and efficiency. This patent offers a multi-faceted solution that enhances both voltage handling and charge management, leading to a more robust and efficient power device.\n\nKeywords: problem solved, breakdown voltage, saturation voltage, IGBT limitations, energy efficiency, reliability, power electronics challenges, voltage-efficiency trade-off, edge breakdown.","question":"What problem does Vertical Power Transistor with Dual Buffer Regions solve?"},{"answer":"The patent for the Vertical Power Transistor with Dual Buffer Regions (US-9852910) does not list specific inventors in the provided data, nor does it specify an assignee. However, such complex semiconductor innovations are typically the result of extensive research and development efforts by teams of engineers and scientists within leading semiconductor manufacturing companies or research institutions.\n\nThese teams often comprise experts in materials science, device physics, semiconductor fabrication, and electrical engineering. The development of a technology like the Vertical Power Transistor with Dual Buffer Regions requires deep theoretical understanding combined with practical expertise in microfabrication processes.\n\nWhile the specific individuals are not named in the provided abstract, the innovation reflects the collective ingenuity aimed at pushing the boundaries of power electronics performance. The assignee, if known, would typically be a major player in the power semiconductor industry, investing significant resources into advancing the state-of-the-art for devices like IGBTs. The absence of specific names here is common in general patent data snippets, but the impact of the invention is attributed to the R&D efforts behind it.\n\nKeywords: inventors, assignee, patent ownership, semiconductor R&D, power device development, IGBT inventors, patent US-9852910.","question":"Who invented Vertical Power Transistor with Dual Buffer Regions?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions offers several key benefits that collectively represent a significant advancement in power electronics technology. Firstly, it provides a **higher breakdown voltage**, meaning the device can safely withstand and block greater electrical pressures without failing. This is crucial for high-power applications such as those found in electric vehicle inverters, industrial motor drives, and grid-scale renewable energy systems.\n\nSecondly, the patent achieves a **lower saturation voltage**, which translates directly into significantly improved energy efficiency. When the transistor is 'on' and conducting electricity, less energy is wasted as heat. This reduction in power loss leads to cooler operation, potentially extending the lifespan of devices and reducing the need for elaborate cooling systems, thereby lowering overall system costs and enhancing sustainability.\n\nThirdly, the innovation includes **enhanced reliability and robustness** through its advanced edge termination structures. By effectively shaping the electric field at the device's periphery and facilitating rapid charge removal, the risk of premature breakdown and device failure is substantially reduced. This makes devices incorporating this technology more durable and dependable, particularly in demanding operational environments. These benefits combine to create a power transistor that is more capable, efficient, and reliable, driving progress across numerous power-intensive industries.\n\nKeywords: key benefits, high breakdown voltage, low saturation voltage, energy efficiency, device reliability, robustness, power electronics advantages, reduced power loss, extended lifespan.","question":"What are the key benefits of Vertical Power Transistor with Dual Buffer Regions?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions distinguishes itself from prior art through several synergistic innovations that collectively overcome fundamental limitations of previous designs. The most significant differentiation lies in its **novel dual buffer layer**. Unlike conventional single buffer or field-stop layers, which offer limited improvements in the breakdown voltage (BV) versus saturation voltage (Vce(sat)) trade-off, this invention uses an n-layer with strategically distributed n+ regions. This advanced architecture allows for a more effective decoupling and optimization of BV and Vce(sat), achieving a superior performance curve where both high voltage handling and low energy loss are simultaneously realized to a greater extent than before.\n\nAnother key difference is its **advanced edge termination structure**. Prior art often employed simpler guard rings or junction termination extensions (JTEs) that primarily focused on field shaping. This patent, however, integrates both deep p-regions (for robust electric field shaping) and shallow p-regions (for rapid hole removal during turn-off) within trenches. This dual-region approach in the edge termination significantly reduces switching losses and enhances overall device reliability, offering a more comprehensive solution than earlier methods.\n\nFurthermore, the **optimized emitter structure with periodic highly-doped p-type emitter dots** is a departure from uniform emitter layers, leading to more efficient carrier injection and reduced on-state losses. These combined innovations provide a more holistic and effective solution to the challenges of power semiconductor design, moving beyond the incremental improvements of prior generations to offer a truly differentiated and higher-performing device.\n\nKeywords: different from prior art, dual buffer layer, edge termination, BV-Vce(sat) trade-off, emitter structure, semiconductor differentiation, IGBT comparison, innovation over prior art, performance curve.","question":"How is Vertical Power Transistor with Dual Buffer Regions different from prior art?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions is poised to significantly impact a wide array of industries that rely heavily on efficient and reliable power conversion. Primarily, it will revolutionize the **electric vehicle (EV) sector**, enhancing the performance of traction inverters, onboard chargers, and DC-DC converters. This will translate into longer driving ranges, faster charging times, and more robust vehicle electronics, accelerating the global adoption of EVs.\n\nAnother major beneficiary is the **renewable energy industry**, including solar and wind power. The improved efficiency and breakdown voltage offered by this patent will lead to more effective inverters and converters, maximizing energy harvesting from solar panels and wind turbines, and facilitating more stable integration into the power grid. This is crucial for scaling up sustainable energy infrastructure worldwide.\n\nFurthermore, **industrial automation and motor drives** will see substantial benefits. Factories, robotics, and heavy machinery requiring precise and powerful motor control will become more energy-efficient, run cooler, and experience extended operational lifespans due to reduced power losses and enhanced reliability. The patent will also impact the **power supply and data center industries**, enabling more compact, efficient, and reliable power management units, which are critical for reducing energy consumption and operational costs in large-scale computing environments.\n\nKeywords: industry impact, electric vehicles, renewable energy, industrial automation, motor drives, power supplies, data centers, energy sector, electrification, sustainable energy.","question":"What industries will Vertical Power Transistor with Dual Buffer Regions impact?"},{"answer":"The patent for the Vertical Power Transistor with Dual Buffer Regions, identified as US-9852910, was **filed on May 9, 2017**. This marks the initial date when the patent application was submitted to the patent office, formally staking a claim to the invention.\n\nFollowing the filing date, the patent underwent a rigorous examination process by patent examiners. This process involves a thorough review of the claims, comparison against prior art, and ensuring the invention meets criteria for novelty, non-obviousness, and utility. Upon successful examination and resolution of any issues, the patent was subsequently **published and granted on December 26, 2017**.\n\nThe relatively short period between the filing and publication/grant dates (approximately 7.5 months) suggests that the application may have been expedited or that the claims were well-defined and faced minimal objections during the examination phase. This quick turnaround highlights the perceived significance and clarity of the innovations presented in the Vertical Power Transistor with Dual Buffer Regions patent.\n\nKeywords: filing date, publication date, patent granted, patent timeline, US-9852910, intellectual property, patent process, invention timeline, semiconductor patent.","question":"When was Vertical Power Transistor with Dual Buffer Regions filed/granted?"},{"answer":"The commercial applications of the Vertical Power Transistor with Dual Buffer Regions are extensive and span across any industry requiring high-performance, efficient, and reliable power conversion. One of the most prominent applications is in **electric vehicles (EVs)**, where these transistors can be integrated into traction inverters to improve motor efficiency, extend battery range, and enable faster charging systems. They are also crucial for DC-DC converters and onboard chargers in EVs.\n\nIn the **renewable energy sector**, this technology will be vital for highly efficient solar inverters, wind turbine converters, and energy storage systems. Its enhanced breakdown voltage and efficiency will allow for more robust and effective conversion of intermittent renewable energy into stable grid power. For **industrial applications**, the patent will enable more efficient motor drives for factory automation, robotics, and heavy machinery, leading to reduced energy consumption, lower operating costs, and increased productivity. The improved reliability also translates to less downtime for critical industrial equipment.\n\nFurthermore, the Vertical Power Transistor with Dual Buffer Regions has significant commercial potential in **high-power density power supplies**, used in data centers, telecommunications infrastructure, and servers. Its ability to reduce power losses and operate cooler allows for more compact and energy-efficient power bricks, crucial for managing the immense power demands of modern computing. The innovation also finds use in **consumer electronics** requiring high-efficiency power management, such as advanced power adapters and home appliances.\n\nKeywords: commercial applications, electric vehicles, renewable energy, industrial automation, data centers, power supplies, motor drives, solar inverters, EV charging, high-power electronics.","question":"What are the commercial applications of Vertical Power Transistor with Dual Buffer Regions?"},{"answer":"The Vertical Power Transistor with Dual Buffer Regions lays a robust foundation for numerous future developments in power semiconductor technology. One key area for future development will be the **further optimization of the dual buffer layer**. Researchers may explore different doping profiles, geometries, and material combinations for the n-layer and distributed n+ regions to push the breakdown voltage (BV) versus saturation voltage (Vce(sat)) trade-off even further. This could involve advanced simulation techniques and new epitaxial growth methods.\n\nAnother expected development is the **integration of this technology with wide-bandgap (WBG) semiconductors** like Silicon Carbide (SiC) or Gallium Nitride (GaN). While the patent primarily describes silicon-based devices, adapting the dual buffer layer and advanced edge termination concepts to WBG materials could unlock unprecedented levels of performance, including even higher operating temperatures, faster switching speeds, and greater power densities. This would be a significant leap for next-generation power modules.\n\nFurther refinements in **edge termination structures** are also anticipated, potentially involving more complex trench designs, self-aligned processes, or novel passivation techniques to enhance reliability and reduce leakage currents at even higher voltages. Additionally, as manufacturing processes become more precise, there will be opportunities to scale down the device dimensions while maintaining or improving performance, leading to even more compact and cost-effective power solutions. These developments will ensure that the Vertical Power Transistor with Dual Buffer Regions continues to be a cornerstone for innovation in power electronics for decades to come.\n\nKeywords: future developments, dual buffer layer optimization, wide-bandgap semiconductors, SiC, GaN, edge termination refinements, power semiconductor roadmap, device scaling, advanced materials, next-generation power electronics.","question":"What are the future developments expected for Vertical Power Transistor with Dual Buffer Regions?"}],"topics":["vertical power transistor","IGBT","dual buffer regions","semiconductor","power electronics","evolution","power"],"tech_cluster":null},"seo":{"title":"Vertical Power Transistor with Dual Buffer Regions - US-9852910","description":"Discover the Vertical Power Transistor with Dual Buffer Regions patent: revolutionary IGBT improvements, higher breakdown voltage, lower saturation voltage, enhanced reliability.","keywords":["vertical power transistor","IGBT","dual buffer regions","semiconductor","power electronics","breakdown voltage","saturation voltage","edge termination","energy efficiency","power device innovation","patent US-9852910"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852910","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852910","citation_suggestion":"Patentable. \"Vertical power transistor with dual buffer regions\" (US-9852910). https://patentable.app/patents/US-9852910","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852910","json":"https://patentable.app/api/llm-context/US-9852910","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:19:26.593Z"}