{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852914","patent":{"patent_number":"US-9852914","title":"Sacrificial-film removal method and substrate processing device","assignee":null,"inventors":[],"filing_date":"2014-10-27T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step."},"analysis":{"summary":"The patent, titled \"Sacrificial-film Removal Method and Substrate Processing Device\" (US-9852914), introduces a sophisticated, multi-stage method for precisely removing sacrificial films from semiconductor substrates. This innovation is critical for fabricating advanced micro-devices, such as MEMS and 3D integrated circuits, where delicate structures must be perfectly freed from temporary support layers.\n\nThe core problem this technology solves is the inherent difficulty in completely and cleanly removing sacrificial films without causing damage (like stiction or residue) to the intricate underlying struts and features. Traditional single-method approaches, whether purely wet or purely dry etching, often fall short, leading to compromised device performance and manufacturing yield losses.\n\nThis technical approach combines the strengths of both wet and dry etching. It begins with a wet etching step to remove the sacrificial film to approximately half its depth, leveraging the efficiency of liquid chemistry for bulk material removal. This is followed by a thorough rinse to eliminate residues and a drying step to prepare the substrate. The final, crucial phase is a dry etching step, which uses an etching gas to meticulously remove the remaining sacrificial film. This two-pronged strategy ensures high precision, residue-free results, and prevents stiction, which is a common issue with delicate micro-structures.\n\nThe business value and applications of this patent are substantial. It promises to significantly boost manufacturing yields in the semiconductor industry by reducing defects associated with sacrificial film removal. This translates to lower production costs, faster time-to-market for new devices, and enhanced reliability of microelectronic components. Its applications span advanced logic, memory, sensors, and other micro-electromechanical systems that rely on precise structural fabrication.\n\nFrom a market opportunity perspective, this innovation addresses a critical need in a rapidly growing sector. As devices become smaller and more complex, the demand for highly precise and reliable fabrication methods will only increase. The Sacrificial-film Removal Method and Substrate Processing Device positions itself as a key enabling technology for the next generation of microelectronic devices, offering a competitive edge to manufacturers who adopt this advanced processing approach.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're building a very tiny, complex miniature city, like a microchip. Sometimes, to build delicate bridges or towers, you need temporary scaffolding. Once the permanent structure is built, you need to remove that scaffolding perfectly, without damaging anything or leaving any bits behind. In the world of microchips, these temporary structures are called 'sacrificial films.'\n\nThe big problem is that removing these sacrificial films is incredibly tricky. If you just wash them away with liquid, sometimes the tiny bridges (called 'struts') stick to the ground or to each other as they dry – like wet paper sticking together. This is called 'stiction,' and it ruins the chip. Other times, the liquid doesn't get into all the tiny nooks, leaving bits of scaffolding behind, or it might even damage the permanent structures. These issues lead to a lot of wasted chips and higher manufacturing costs.\n\n### How Does It Work?\n\nThis patent, known as the \"Sacrificial-film Removal Method and Substrate Processing Device,\" offers a genius solution by using a two-part cleaning process, much like a specialized cleaning crew:\n\n1.  **The 'Rough Clean' (Wet Etching):** First, the chip gets a bath in a special liquid. This liquid is designed to dissolve about half of the sacrificial film. It's efficient for removing the bulk of the material, like a bulldozer clearing most of a construction site. This initial step is faster and more cost-effective for large amounts of material.\n\n2.  **The 'Precision Finish' (Rinse, Dry, and Dry Etching):** After the initial bath, the chip is thoroughly rinsed to wash away any leftover liquid or dissolved material. Then, it's carefully dried. This drying step is critical to prevent stiction. Finally, instead of more liquid, a special gas (like a super-fine sandblaster or a targeted laser) is used to remove the *remaining* half of the sacrificial film. This 'dry etching' is incredibly precise. It can get into the smallest gaps, etch straight down without undercutting, and leaves absolutely no residue. Because it's a dry process, there's no liquid to cause stiction, ensuring the delicate structures stand perfectly free.\n\nSo, this invention combines the efficiency of liquid cleaning for the big stuff with the pinpoint accuracy of gas cleaning for the delicate finishing touches.\n\n### Why Does This Matter?\n\nThis innovation is a big deal for several reasons:\n\n*   **Higher Yields, Lower Costs:** By virtually eliminating defects like stiction and incomplete removal, chip manufacturers can produce many more perfect chips from each silicon wafer. This directly translates to lower manufacturing costs and higher profits.\n*   **Better, More Reliable Products:** Chips made with this method are cleaner and have more perfectly formed structures, leading to more reliable and higher-performing electronic devices. Think faster, more durable smartphones, more accurate medical sensors, and more robust components for self-driving cars.\n*   **Enabling Future Tech:** As devices get smaller and more complex (e.g., 3D stacked chips, advanced sensors), the need for such precise manufacturing becomes even more critical. This technology enables engineers to design and build structures that were previously too challenging or impossible to fabricate reliably, pushing the boundaries of what electronics can do.\n\n### What's Next?\n\nThis method is poised to become a standard practice in high-end semiconductor and MEMS manufacturing. Companies that adopt this technology early will gain a significant competitive advantage, allowing them to lead in the production of next-generation devices. We can expect to see this approach integrated into advanced fabrication lines, paving the way for even more powerful, compact, and reliable electronics across countless industries, from consumer gadgets to aerospace.","technical_analysis":"The patent \"Sacrificial-film Removal Method and Substrate Processing Device\" (US-9852914) details a sophisticated hybrid etching process designed to overcome long-standing challenges in the precise removal of sacrificial films from semiconductor substrates. This technical analysis delves into the architecture, implementation details, and performance characteristics of this innovative method, crucial for advanced microfabrication.\n\n**Technical Architecture and Process Flow:**\n\nThe core of this invention lies in its sequential, multi-step approach, combining wet and dry etching techniques. The process flow is meticulously defined to capitalize on the advantages of each etching modality while mitigating their respective drawbacks. The architecture involves a substrate processing device capable of executing the following steps:\n\n1.  **Wet Etching Step:** The initial phase involves supplying a liquid etchant to the substrate surface. The objective here is bulk removal, reducing the sacrificial film's thickness to approximately half its original depth. This step leverages the high etch rates and cost-effectiveness of wet chemical processes. For instance, if the sacrificial film is silicon dioxide (SiO2), diluted hydrofluoric acid (HF) would be a common etchant. The key is controlled partial removal to prepare for the subsequent, more precise dry etch.\n\n2.  **Rinse Step:** Following the wet etch, a rinsing liquid (e.g., deionized water for aqueous etchants, or specific organic solvents for non-aqueous etchants) is supplied. This step is critical for removing any residual etchant, dissolved sacrificial material, and reaction byproducts. Incomplete rinsing can lead to contamination, unwanted reactions, or mask degradation in subsequent steps. Advanced rinsing techniques, such as megasonic agitation, might be employed to enhance efficiency, especially in high-aspect-ratio features.\n\n3.  **Drying Step:** After rinsing, the liquid component on the substrate surface is removed. This is a crucial transition from a wet to a dry processing environment. Conventional drying methods can induce capillary forces that lead to stiction—the irreversible collapse and adhesion of delicate microstructures. Therefore, advanced drying techniques like supercritical CO2 drying or Marangoni drying are likely implied or beneficial, as they minimize surface tension effects, preserving the integrity of partially released features.\n\n4.  **Dry Etching Step:** The final and precision-critical step involves supplying an etching gas to remove the remaining sacrificial film. This is typically a plasma-based process (e.g., Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP-RIE)). Dry etching offers several advantages: high anisotropy (enabling vertical etching without significant undercutting), excellent selectivity (etching the sacrificial film without damaging adjacent materials), and a residue-free process. The choice of etching gas (e.g., SF6 for silicon, C4F8/O2 for polymers, or fluorocarbons for SiO2) and plasma parameters (RF power, pressure, gas flow rates, substrate temperature, bias voltage) would be precisely tuned to achieve the desired etch profile and complete removal of the remaining half-depth film.\n\n**Implementation Details and Performance Characteristics:**\n\nThe implementation of this patent would require a substrate processing device capable of seamlessly integrating these distinct process modules. This could involve a cluster tool architecture where wafers are transferred between different chambers for wet processing, rinsing, drying, and plasma etching. Advanced process control systems would be essential to monitor and adjust parameters at each stage, ensuring consistent etch depths, minimal residue, and optimal structural integrity.\n\nPerformance characteristics are significantly enhanced by this hybrid approach. The initial wet etch provides high throughput for bulk material removal, making the overall process faster than a purely dry etch for thick sacrificial layers. The subsequent dry etch delivers the required precision, achieving clean, vertical sidewalls and complete removal in intricate geometries, which is difficult with wet etching alone. This combination drastically reduces defects such as stiction (a major yield limiter in MEMS fabrication) and incomplete film removal. The result is improved device reliability, higher manufacturing yields, and the ability to realize more complex and miniaturized device designs that were previously challenging or impossible.\n\n**Integration Patterns and Code-Level Implications:**\n\nWhile the patent describes a physical process, its implications for automation and integration are significant. For engineers, this means developing sophisticated control algorithms for each step, ensuring precise gas flow, liquid delivery, temperature control, and plasma generation. Data logging and real-time feedback loops would be crucial for process optimization and fault detection. The 'code-level' implications extend to the software controlling the entire fabrication tool, managing wafer movement, recipe execution, and environmental parameters to ensure repeatable and high-quality sacrificial film removal. This approach sets a new standard for precision in microfabrication, enabling the next generation of advanced electronic components.","business_analysis":"The patent \"Sacrificial-film Removal Method and Substrate Processing Device\" (US-9852914) represents a significant advancement with profound business implications for the semiconductor and micro-electromechanical systems (MEMS) industries. This innovation addresses a critical bottleneck in advanced manufacturing, promising to reshape market dynamics and unlock new revenue streams.\n\n**Market Opportunity Size:**\n\nThe global semiconductor manufacturing equipment market, valued in the tens of billions of dollars annually, is driven by the relentless demand for smaller, faster, and more complex electronic devices. Within this, etching equipment constitutes a substantial segment. This patent directly targets a fundamental process step in the fabrication of high-value components like advanced logic, memory (e.g., 3D NAND), MEMS sensors, and RF devices. As these markets continue to grow – fueled by AI, IoT, 5G, and automotive electronics – the demand for more precise and efficient processing methods, such as this sacrificial film removal technique, will expand commensurately. The addressable market includes all foundries, IDMs (Integrated Device Manufacturers), and MEMS manufacturers seeking to improve their yields and capabilities for next-generation products.\n\n**Competitive Advantages:**\n\nThis technology offers several compelling competitive advantages:\n\n1.  **Superior Yields and Reliability:** By effectively mitigating issues like incomplete film removal, residue formation, and stiction, the Sacrificial-film Removal Method and Substrate Processing Device can dramatically increase manufacturing yields. Higher yields directly translate to lower per-unit costs and greater profitability.\n2.  **Enhanced Device Performance:** Cleaner and more precisely defined microstructures lead to more reliable and higher-performing devices, providing a competitive edge in product differentiation.\n3.  **Enabling Advanced Architectures:** The precision of this hybrid etching method allows for the fabrication of even more intricate and delicate structures, opening doors for novel device designs and functionalities that are difficult or impossible with prior art.\n4.  **Cost Efficiency:** While involving multiple steps, the optimized combination of wet and dry etching can lead to overall cost savings by reducing re-work, waste, and ultimately, the total cost of ownership for advanced fabrication processes.\n\n**Revenue Potential and Business Models:**\n\nThe revenue potential for this innovation is multi-faceted. Equipment manufacturers could license the technology or integrate it into new generations of substrate processing tools, commanding premium pricing due to the value it delivers. Foundries adopting this method would gain a competitive advantage in offering advanced process nodes and specialized MEMS fabrication services, attracting high-value customers. Furthermore, the increased yields and reliability could lead to higher average selling prices (ASPs) for the end devices produced using this method.\n\nPotential business models include:\n\n*   **Equipment Sales/Licensing:** Selling or licensing integrated wet/dry etching systems that implement the method.\n*   **Process IP Licensing:** Licensing the process methodology itself to existing equipment manufacturers or foundries.\n*   **Foundry Service Enhancement:** Offering specialized fabrication services that leverage the superior capabilities of this patent.\n*   **Material Sales:** Developing and selling optimized etchant chemistries or etching gases specifically tailored for this hybrid process.\n\n**Strategic Positioning:**\n\nStrategically, this patent positions its implementers at the forefront of advanced microfabrication. It addresses a critical pain point that scales with device miniaturization, making it future-proof in an industry defined by continuous innovation. Companies adopting this technology can differentiate themselves as leaders in high-precision manufacturing, attracting top-tier clients and talent. It reinforces a strategic shift towards more integrated and intelligent manufacturing processes.\n\n**ROI Projections:**\n\nWhile specific ROI will vary, the benefits are clear. A conservative increase of 5-10% in manufacturing yield for high-value products can translate into millions, if not billions, of dollars in additional revenue annually for a major foundry. Reduced defect rates also cut down on quality control, re-work, and warranty costs. The ability to produce next-generation devices earlier and more reliably offers an intangible but significant market advantage. Investing in or adopting the Sacrificial-film Removal Method and Substrate Processing Device promises substantial returns through improved operational efficiency, product quality, and market leadership.","faqs":[{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) is a patented innovation in semiconductor manufacturing that outlines a precise, multi-stage method for removing sacrificial films from substrate surfaces. Sacrificial films are temporary layers used during the fabrication of microchips and other micro-devices to create specific structures, such as air gaps or free-standing components. Once their purpose is served, they must be completely and cleanly removed without damaging the delicate permanent structures.\n\nThis invention introduces a hybrid approach that combines the strengths of both wet and dry etching techniques. It's designed to overcome the limitations of traditional single-method approaches, which often lead to defects like incomplete removal, residue formation, or stiction (where tiny structures collapse and stick together). By integrating these methods, the Sacrificial-film Removal Method and Substrate Processing Device ensures a high-fidelity, residue-free removal process, crucial for the reliability and performance of advanced microelectronic devices.\n\nThe patent provides a detailed blueprint for a more efficient and precise manufacturing step, directly impacting the quality and cost-effectiveness of next-generation semiconductors and MEMS (Micro-Electro-Mechanical Systems). This technology is essential for pushing the boundaries of miniaturization and complexity in microfabrication, enabling the creation of advanced electronic components. Its core is a sequential process that optimizes each step for maximum benefit.","question":"What is Sacrificial-film Removal Method and Substrate Processing Device?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device operates through a meticulously sequenced four-step process, leveraging both wet and dry etching technologies.\n\nFirst, a **wet etching step** is performed where a liquid etchant is applied to the substrate. This step is designed for bulk removal, dissolving the sacrificial film to approximately half its initial depth. This efficiently clears the majority of the unwanted material using the speed and cost-effectiveness of wet chemistry.\n\nSecond, a **rinse step** follows, during which a rinsing liquid is supplied to the substrate surface. This is crucial for washing out any residual etchant, dissolved sacrificial material, and reaction byproducts, ensuring a clean surface for subsequent processing.\n\nThird, a **drying step** removes all liquid components from the substrate. This phase is critical for preventing 'stiction,' a common issue where delicate microstructures collapse due to surface tension forces during drying. Advanced drying techniques might be employed here to preserve structural integrity.\n\nFinally, a **dry etching step** is executed. After the substrate is thoroughly dried, an etching gas (often in a plasma state) is supplied to precisely remove the *remaining* sacrificial film. This dry etch offers unparalleled control, anisotropy (etching vertically without significant undercutting), and cleanliness, ensuring the complete, residue-free release of delicate structures like struts. This hybrid approach capitalizes on the efficiency of wet etching for initial removal and the precision of dry etching for the critical final finish, making the entire process highly effective.","question":"How does Sacrificial-film Removal Method and Substrate Processing Device work?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) primarily solves the long-standing and costly problems associated with the unreliable and imprecise removal of sacrificial films in semiconductor manufacturing. In microfabrication, sacrificial films are temporary support structures that must be eliminated to create functional micro-components like air gaps, suspended cantilevers, or finely spaced electrical pathways.\n\nTraditional methods often face several critical issues:\n\n*   **Stiction:** Wet etching, a common method, requires subsequent drying. During this drying, capillary forces can cause delicate microstructures to collapse and permanently adhere to the substrate, rendering the device unusable. This is a major yield killer in MEMS (Micro-Electro-Mechanical Systems) fabrication.\n*   **Incomplete Removal and Residue:** Etchants may not fully penetrate high-aspect-ratio features, leaving behind remnants of the sacrificial film. Additionally, wet chemical reactions can leave residues or byproducts that contaminate the surface, affecting device performance and reliability over time.\n*   **Structural Damage:** Overly aggressive etching or isotropic etching (etching in all directions) can damage the permanent, delicate structures adjacent to the sacrificial film, leading to device failure. The Sacrificial-film Removal Method and Substrate Processing Device addresses these challenges by combining the bulk removal efficiency of wet etching with the precision and stiction-free nature of dry etching, ensuring a clean, complete, and damage-free sacrificial film removal.","question":"What problem does Sacrificial-film Removal Method and Substrate Processing Device solve?"},{"answer":"The patent for Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) does not list specific inventors or an assignee in the provided data. However, patents like this are typically the result of extensive research and development efforts by teams of engineers and scientists within major semiconductor equipment manufacturers, research institutions, or large integrated device manufacturers (IDMs). These organizations invest heavily in advancing microfabrication techniques to meet the escalating demands of the electronics industry.\n\nSuch innovations are often born out of a collaborative environment where experts in materials science, chemical engineering, electrical engineering, and process control work together to solve complex manufacturing challenges. The development of a hybrid etching process, as described in this patent, would require deep expertise in both wet chemical processing and plasma etching technologies, as well as an understanding of their interactions and sequencing to achieve optimal results. While the specific individuals are not listed in the abstract, the invention represents a significant contribution to the field of advanced semiconductor processing, reflecting the collective effort to push the boundaries of microfabrication. This type of intellectual property is crucial for maintaining a competitive edge in the highly innovative semiconductor sector.","question":"Who invented Sacrificial-film Removal Method and Substrate Processing Device?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device offers several transformative benefits for advanced microfabrication and the semiconductor industry:\n\n*   **Elimination of Stiction:** By performing the final, critical etching step as a dry process on a dried substrate, this method completely avoids the liquid-induced capillary forces that cause delicate microstructures to collapse and stick together. This is a monumental advantage for MEMS and other devices with intricate free-standing components.\n*   **Higher Manufacturing Yields:** The prevention of stiction, combined with residue-free and complete film removal, drastically reduces defects during fabrication. This directly translates to a significantly higher number of functional chips per wafer, leading to substantial cost savings and increased profitability for manufacturers.\n*   **Enhanced Device Reliability and Performance:** Cleaner, more precisely defined microstructures result in more robust, reliable, and higher-performing electronic devices. This is crucial for critical applications in automotive, aerospace, medical, and high-performance computing sectors, where device failure is unacceptable.\n*   **Enabling Complex Architectures:** The unparalleled precision and control offered by this hybrid etching approach allow engineers to design and reliably fabricate even more intricate, smaller, and higher-aspect-ratio structures. This pushes the boundaries of miniaturization and enables the development of next-generation device architectures, such as advanced 3D ICs and novel sensors.\n*   **Optimized Process Efficiency:** By leveraging the speed of wet etching for bulk material removal and the precision of dry etching for the finish, the overall processing time and efficiency can be optimized compared to relying solely on one method. This approach maximizes throughput while ensuring quality.","question":"What are the key benefits of Sacrificial-film Removal Method and Substrate Processing Device?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device distinguishes itself from prior art by intelligently combining wet and dry etching techniques in a strategic, multi-stage sequence, rather than relying on a single etching modality or simple iterative cycles.\n\nPrior art typically employed either:\n\n*   **Pure Wet Etching:** While fast and cost-effective for bulk removal, it suffered from isotropic etching (undercutting permanent structures), residue formation, and most critically, liquid-induced stiction during drying, which often destroyed delicate microstructures.\n*   **Pure Dry Etching:** This offered anisotropy and cleanliness, avoiding stiction, but was generally slower and more expensive for removing thick sacrificial layers, making it less efficient for bulk material removal.\n\nThis invention's key differentiation lies in its hybrid, sequential approach: it uses a wet etching step for efficient *partial* removal of the sacrificial film, followed by a thorough rinse and drying. Crucially, the *final* removal of the remaining film is then performed by a precision dry etching step. This systematic combination is superior because it capitalizes on the speed of wet etching for the initial bulk while completely avoiding the stiction issues of wet processes by transitioning to a dry environment for the final, delicate removal. This ensures a residue-free, anisotropic, and stiction-free finish that was difficult, if not impossible, to achieve consistently with prior art methods. The Sacrificial-film Removal Method and Substrate Processing Device thus offers a more robust, reliable, and efficient solution for advanced microfabrication challenges.","question":"How is Sacrificial-film Removal Method and Substrate Processing Device different from prior art?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) will have a profound impact across several high-tech industries that rely on advanced microfabrication and semiconductor technologies. Its ability to create cleaner, more precise, and reliable micro-structures makes it a foundational enabling technology.\n\n*   **Semiconductor Manufacturing:** This is the most direct impact. Foundries and Integrated Device Manufacturers (IDMs) will benefit from significantly higher manufacturing yields, reduced defects, and lower production costs for logic, memory (e.g., 3D NAND), and other advanced integrated circuits. This translates to faster, more powerful, and more reliable chips for all electronic devices.\n*   **Micro-Electro-Mechanical Systems (MEMS):** Devices like accelerometers, gyroscopes, pressure sensors, and micro-mirrors critically depend on perfectly freed, delicate mechanical structures. The elimination of stiction and precise release offered by this patent will revolutionize MEMS fabrication, leading to more accurate, robust, and miniaturized sensors for automotive, consumer electronics, and industrial applications.\n*   **Advanced Packaging and 3D Integration:** As chips become increasingly complex, 3D stacking and advanced packaging techniques are crucial. This technology will enable more reliable creation of interconnections, through-silicon vias (TSVs), and micro-bumps, facilitating higher integration densities and improved performance in multi-chip modules.\n*   **Consumer Electronics:** Faster processors, more efficient memory, and more reliable sensors in smartphones, wearables, tablets, and smart home devices will all indirectly benefit from the improved manufacturing processes enabled by this innovation.\n*   **Automotive and Aerospace:** Enhanced reliability and precision in semiconductor components are vital for safety-critical systems in autonomous vehicles, advanced driver-assistance systems (ADAS), and aerospace electronics.\n*   **Medical Devices:** Miniaturized, high-precision sensors and microfluidic devices for diagnostics and drug delivery will see improved performance and reliability due to cleaner fabrication processes. The Sacrificial-film Removal Method and Substrate Processing Device is a cross-cutting innovation that underpins progress in virtually all sectors driven by advanced electronics.","question":"What industries will Sacrificial-film Removal Method and Substrate Processing Device impact?"},{"answer":"The patent for Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) was filed on **October 27, 2014**. It was subsequently published and granted on **December 26, 2017**.\n\nThe period between the filing date and the publication/grant date is typical for the patent examination process in the United States. During this time, the patent application undergoes rigorous review by patent examiners, who assess its novelty, non-obviousness, and utility against prior art. The granting of the patent in late 2017 signifies that the United States Patent and Trademark Office (USPTO) recognized the unique and inventive nature of this sacrificial film removal method and substrate processing device.\n\nThis timeline highlights the forward-looking nature of the invention, as the challenges it addresses in microfabrication were pertinent in the mid-2010s and have only become more critical with the continued advancement of semiconductor technology. The patent's publication date marks the point at which the details of this innovative hybrid etching process became publicly available, allowing the industry to understand and potentially adopt or license the technology. The Sacrificial-film Removal Method and Substrate Processing Device has since been a significant piece of intellectual property in the semiconductor field.","question":"When was Sacrificial-film Removal Method and Substrate Processing Device filed/granted?"},{"answer":"The commercial applications of the Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) are extensive, primarily focused on enhancing the manufacturing capabilities and yield of high-value microelectronic components. This technology is a critical enabler for various advanced products and processes:\n\n*   **Advanced Logic and Memory Production:** Foundries and IDMs can utilize this method to fabricate next-generation CPUs, GPUs, and high-density memory (like 3D NAND flash) with greater precision. This leads to higher yields of functional chips, reducing manufacturing costs and enabling more powerful computing devices.\n*   **MEMS Device Manufacturing:** The patent is particularly impactful for MEMS (Micro-Electro-Mechanical Systems) devices, which rely on delicate, free-standing structures. Commercial applications include accelerometers and gyroscopes for smartphones and wearables, pressure sensors for automotive safety systems, micro-mirrors for projectors and optical switches, and microfluidic devices for medical diagnostics. The elimination of stiction is a key commercial advantage.\n*   **3D Integrated Circuits (3D ICs) and Advanced Packaging:** As chip stacking becomes prevalent, precise removal of sacrificial layers is essential for creating interconnections (e.g., through-silicon vias) and ensuring isolation between stacked dies. This technology supports the commercialization of more compact, high-performance 3D ICs and heterogeneous integration.\n*   **High-Frequency RF Components:** In the telecommunications industry, especially for 5G and beyond, high-frequency RF components often incorporate air gaps or suspended structures for improved performance. The Sacrificial-film Removal Method and Substrate Processing Device ensures the reliable fabrication of these critical elements.\n*   **Sensors for IoT and AI:** From environmental sensors to biometric devices and edge AI hardware, the demand for miniaturized, reliable sensors is booming. This patent enables the mass production of such sensors with enhanced accuracy and durability.\n\nUltimately, the commercial value lies in increased manufacturing efficiency, reduced defect rates, and the ability to produce higher-performing, more reliable electronic components across a multitude of product categories, giving adopters a significant competitive edge in the global market.","question":"What are the commercial applications of Sacrificial-film Removal Method and Substrate Processing Device?"},{"answer":"The Sacrificial-film Removal Method and Substrate Processing Device (US-9852914) lays a robust foundation for future advancements in microfabrication. Several key developments are expected as the industry further embraces and refines this hybrid etching paradigm:\n\n*   **Enhanced Automation and Integration:** Future processing devices will likely feature even more seamless integration of the wet, rinse, dry, and dry etch modules into single, highly automated cluster tools. This will reduce wafer transfer times, minimize contamination risks, and improve overall throughput and efficiency. AI and machine learning could be integrated for real-time process optimization and predictive maintenance.\n*   **Expanded Material Compatibility:** Research will continue to develop and optimize etchant chemistries and plasma parameters to extend the applicability of this method to an even wider range of sacrificial and structural materials, including novel polymers, ceramics, and advanced composites. This is crucial for emerging device architectures and material systems.\n*   **Atomic Layer Etching (ALE) Integration:** For ultimate precision, future iterations might incorporate Atomic Layer Etching (ALE) as part of or in conjunction with the dry etching step. ALE offers exquisite control over material removal at the atomic scale, enabling even finer feature definition and potentially reducing damage to underlying layers.\n*   **In-situ Monitoring and Control:** Advanced sensor technologies will provide more comprehensive in-situ monitoring of etch rates, film thickness, and surface conditions at each stage. This data will feed into sophisticated control algorithms, allowing for dynamic process adjustments to ensure consistent, high-quality results across different wafer batches.\n*   **Application in New Frontiers:** Beyond traditional semiconductors, this method could find applications in emerging fields like quantum computing hardware (e.g., creating precise qubit isolation structures), advanced photonics, and highly integrated bio-MEMS devices, where ultra-precise and damage-free sacrificial layer removal is paramount. The Sacrificial-film Removal Method and Substrate Processing Device will continue to evolve, driving precision and efficiency in microfabrication to new heights.","question":"What are the future developments expected for Sacrificial-film Removal Method and Substrate Processing Device?"}],"topics":["sacrificial film removal","substrate processing device","wet etching","dry etching","semiconductor manufacturing","technical","understanding","sacrificial"],"tech_cluster":null},"seo":{"title":"Sacrificial-film Removal Method and Substrate Processing Device - Patent US-9852914","description":"Discover the Sacrificial-film Removal Method and Substrate Processing Device, a patent revolutionizing microchip manufacturing with hybrid wet/dry etching for residue-free, high-yield processing. Explore its technical details and business impact.","keywords":["sacrificial film removal","substrate processing device","wet etching","dry etching","semiconductor manufacturing","microfabrication","MEMS","stiction prevention","high yield etching","patent US-9852914","advanced etching technology","chip fabrication","3D IC processing","residue-free etching"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852914","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852914","citation_suggestion":"Patentable. \"Sacrificial-film removal method and substrate processing device\" (US-9852914). https://patentable.app/patents/US-9852914","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852914","json":"https://patentable.app/api/llm-context/US-9852914","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:22.733Z"}