{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852916","patent":{"patent_number":"US-9852916","title":"Single platform, multiple cycle spacer deposition and etch","assignee":null,"inventors":[],"filing_date":"2016-06-27T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed."},"analysis":{"summary":"The patent, Single Platform, Multiple Cycle Spacer Deposition and Etch (US-9852916), introduces a highly innovative and efficient method for fabricating critical multi-cycle spacer structures on semiconductor substrates. At its core, this invention addresses the inefficiencies and defect risks associated with traditional multi-tool processes by consolidating sequential deposition and etching steps into a single processing platform.\n\nThe primary problem it solves is the complexity, time, and potential for contamination inherent in repeatedly transferring wafers between separate deposition and etch chambers for each spacer layer. Such transfers increase cycle times, introduce process variability, and heighten the risk of particulate contamination, ultimately impacting manufacturing yield and cost.\n\nTechnically, the patent describes forming an initial spacer portion, then continuously repeating a cycle of spacer layer deposition using a first plasma process, followed by etching the layer to form a subsequent portion using a second plasma process. All these operations occur within the same integrated chamber until the complete multi-cycle spacer is formed. This 'single platform' approach ensures a consistent environment, leading to superior process control and uniformity.\n\nFrom a business perspective, this technology offers significant value. It promises dramatically reduced manufacturing cycle times, leading to higher throughput and faster time-to-market for advanced semiconductor devices. The improved process control and minimized contamination risk translate directly into higher yields and lower production costs. This competitive advantage is crucial for manufacturers of cutting-edge chips like FinFETs, 3D NAND memory, and other complex integrated circuits.\n\nThe market opportunity for this invention is substantial, as it directly supports the ongoing miniaturization and performance demands of the global electronics industry. By enabling more efficient and cost-effective fabrication of advanced nanoscale features, the Single Platform, Multiple Cycle Spacer Deposition and Etch patent positions itself as a key enabler for next-generation computing, AI, and IoT devices, driving innovation and profitability in the semiconductor sector.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're running a highly specialized factory that builds incredibly complex, miniature engines – like the ones in your smartphone. To make these engines work, you need to add many tiny, precise layers, one after another, and then carefully shape each layer. The traditional way of doing this is like having two different workshops: one for adding the material (deposition) and another for shaping it (etching). For every single layer, you'd have to physically move the engine from the 'add material' workshop to the 'shape material' workshop, then back again, and repeat this cycle dozens of times. This process is slow, expensive, and every time you move the engine, there's a risk of it getting dusty, bumped, or misaligned, leading to a faulty product.\n\nThis constant back-and-forth leads to higher manufacturing costs, longer production times, and a significant number of defective engines. As engines get smaller and more complex, these problems only get worse, creating a bottleneck for innovation in the industry.\n\n### How Does It Work?\n\nThe patent, Single Platform, Multiple Cycle Spacer Deposition and Etch, offers an elegant solution: instead of two separate workshops, imagine having *one* super-advanced workshop where both the 'adding material' and 'shaping material' steps happen seamlessly, without ever moving the engine. This single platform is a highly controlled environment, like a cleanroom inside a cleanroom.\n\nHere’s the conceptual breakdown: First, a foundational layer of the 'engine' is prepared. Then, within this single workshop, a special 'plasma process' deposits a new, thin layer of material. Immediately after, another 'plasma process' precisely etches (shapes) that newly added layer. This entire sequence – deposit, then etch – is then continuously repeated, layer after layer, until the complex multi-layered structure is complete. The key is that the engine never leaves the single, controlled environment. It's like a highly automated, self-contained assembly line for microscopic parts.\n\n### Why Does This Matter?\n\nThis innovation has massive implications for the business world, particularly in the semiconductor industry, which powers virtually all modern technology. By consolidating the deposition and etching processes onto a single platform, this technology delivers several critical advantages:\n\n1.  **Cost Efficiency:** Fewer machines are needed, reducing capital expenditure and maintenance. Less handling means fewer defects, saving on wasted materials and rework.\n2.  **Faster Production:** Eliminating the time-consuming transfers between machines drastically cuts down the overall manufacturing cycle time. This means products can get to market faster, giving companies a significant competitive edge.\n3.  **Higher Quality & Reliability:** Keeping the process in one controlled environment minimizes contamination and inconsistencies. This results in higher manufacturing yields (more good chips per wafer) and more reliable, higher-performing devices for consumers.\n4.  **Enabling Future Tech:** As chips get smaller and more powerful, the precision required is extreme. This technology provides the necessary control to build the next generation of microprocessors, memory chips, and specialized components for AI, IoT, and high-performance computing, which would be difficult or impossible with older methods.\n\n### What's Next?\n\nThis technology is not just an incremental improvement; it's a foundational shift. Companies that adopt or license the Single Platform, Multiple Cycle Spacer Deposition and Etch approach will be able to produce cutting-edge semiconductors more efficiently and cost-effectively. This will drive innovation in areas like advanced packaging, quantum computing, and bio-sensors, where intricate nanoscale structures are paramount. Expect to see this innovation influencing the speed, size, and power of electronic devices for years to come, offering significant ROI for those who invest in its capabilities and market adoption.","technical_analysis":"The patent, Single Platform, Multiple Cycle Spacer Deposition and Etch (US-9852916), presents a sophisticated methodology for the fabrication of multi-cycle spacer structures, a cornerstone process in advanced semiconductor manufacturing. This innovation fundamentally re-architects the traditional approach by integrating sequential deposition and etching steps within a single processing platform, thereby addressing critical limitations of prior art.\n\n**Technical Architecture and Process Flow:**\nAt the heart of this invention is a unified processing chamber capable of executing both plasma-enhanced deposition and plasma etching. The process initiates with a substrate having pre-patterned features, typically formed via lithography and etch. A first portion of the multiple cycle spacer is formed on the sidewall of these patterned features. Subsequently, the core inventive step involves a continuous, iterative cycle:\n1.  **Spacer Layer Deposition (First Plasma Process):** A spacer material (e.g., silicon nitride, silicon oxide) is deposited conformally on the first portion and exposed surfaces using a first plasma process. This could involve plasma-enhanced atomic layer deposition (PEALD) or plasma-enhanced chemical vapor deposition (PECVD) optimized for film quality and conformality.\n2.  **Spacer Layer Etch (Second Plasma Process):** Immediately following deposition, and crucially, without removing the substrate from the chamber, the newly deposited spacer layer is anisotropically etched using a second plasma process. This etch is designed to remove material from horizontal surfaces while preserving or minimizing removal from vertical sidewalls, thereby forming a second portion of the multiple cycle spacer.\nThis deposition-etch cycle is then continuously repeated within the same chamber until the desired total thickness and critical dimensions of the multiple cycle spacer are achieved.\n\n**Implementation Details and Algorithm Specifics:**\nImplementing this technology requires a highly versatile processing chamber equipped with advanced capabilities for precise gas delivery, plasma generation, and temperature control. The system must be capable of rapid and stable transitions between distinct plasma chemistries and process parameters required for deposition and etching. For instance, the 'first plasma process' might involve specific precursor gases and RF power settings optimized for film growth, while the 'second plasma process' would utilize different etchant gases (e.g., fluorocarbons for dielectric etch) and bias power to achieve high anisotropy and selectivity. The 'algorithm' here is the precise sequencing and control of these plasma parameters, gas flows, and process durations to achieve the desired spacer profile and critical dimension control across multiple cycles.\n\n**Integration Patterns and Performance Characteristics:**\nThis single-platform approach eliminates the need for wafer transfers between separate deposition and etch tools. This integration pattern significantly reduces:\n*   **Contamination:** Minimizing exposure to ambient air or different chamber environments drastically lowers the risk of particulate or chemical contamination.\n*   **Process Variability:** By maintaining the wafer in a consistent environment, tool-to-tool and batch-to-batch variations are mitigated, leading to superior within-wafer and wafer-to-wafer uniformity.\n*   **Cycle Time:** The overhead associated with wafer handling, pump-down/venting, and re-alignment is removed, leading to substantial improvements in throughput.\n*   **Thermal Budget:** Reduced thermal cycling can be beneficial for sensitive materials and device structures.\n\nThe performance characteristics of devices fabricated using this method are expected to include tighter critical dimension control, improved electrical performance due to cleaner interfaces, and enhanced reliability. The ability to precisely tune each deposition and etch step in sequence within a unified environment offers unprecedented control over the final spacer profile, which is crucial for advanced patterning techniques like self-aligned double patterning (SADP) or quadruple patterning (SAQP).\n\n**Code-Level Implications:**\nWhile not directly code-level in the software sense, the 'code' for this system would reside in the sophisticated process control software (PCS) and equipment control system (ECS) that orchestrate the precise timing, gas flows, RF power, and temperature profiles for each sub-process. This involves complex recipe management, real-time sensor feedback loops, and potentially machine learning algorithms for adaptive process control and fault detection. The system would need robust inter-process communication and state management to ensure seamless transitions between deposition and etch phases, managing precursor delivery, exhaust, plasma ignition, and termination with high precision. This technical framework underpins the ability of the Single Platform, Multiple Cycle Spacer Deposition and Etch to deliver its promised efficiency and precision.","business_analysis":"The patent, Single Platform, Multiple Cycle Spacer Deposition and Etch (US-9852916), represents a significant commercial opportunity within the highly capital-intensive semiconductor manufacturing industry. This innovation, by streamlining the complex process of multi-cycle spacer formation, offers compelling advantages that can profoundly impact market share, profitability, and strategic positioning for foundries and integrated device manufacturers (IDMs).\n\n**Market Opportunity Size:**\nThe global semiconductor manufacturing equipment market is valued in the tens of billions of dollars annually, with plasma deposition and etch tools forming a substantial segment. As feature sizes continue to shrink and advanced architectures (FinFETs, GAA, 3D NAND) become standard, the demand for highly precise and efficient patterning solutions is escalating. This patent directly addresses a critical bottleneck in these advanced processes, making its market potential enormous. Any solution that can improve yield by even a fraction of a percent or reduce cycle time by a few hours can translate into billions in revenue for chipmakers.\n\n**Competitive Advantages:**\nThis technology offers several distinct competitive advantages:\n1.  **Cost Reduction:** By consolidating multiple tools into a single platform, it reduces capital expenditure, maintenance costs, and facility footprint. Furthermore, higher yields directly translate to lower per-chip manufacturing costs.\n2.  **Increased Throughput:** Eliminating wafer transfers significantly reduces overall process time, leading to higher wafer output per day and faster time-to-market for new products.\n3.  **Superior Quality and Yield:** Reduced contamination and improved process control result in fewer defects, leading to higher wafer yields and more reliable devices. This is a critical differentiator in a market where quality directly impacts customer satisfaction and brand reputation.\n4.  **Enabler for Advanced Nodes:** The precision and control offered by this invention are crucial for fabricating sub-10nm and future sub-5nm nodes, giving early adopters a competitive edge in leading-edge technology.\n\n**Revenue Potential and Business Models:**\nEquipment manufacturers licensing or developing solutions based on this patent could see substantial revenue from sales of integrated deposition-etch platforms. The business model could involve direct sales, long-term service contracts, and potentially intellectual property licensing. For chip manufacturers, the revenue potential comes from increased profitability due to lower costs and higher yields, as well as the ability to bring advanced products to market faster. This innovation could also enable new business models by allowing for more cost-effective production of specialized chips or smaller volume, high-value components.\n\n**Strategic Positioning:**\nCompanies that adopt or develop this technology will be strategically positioned at the forefront of advanced semiconductor manufacturing. It allows them to differentiate themselves by offering superior process capabilities, higher quality products, and more competitive pricing. This patent can be a cornerstone for a company's intellectual property portfolio, providing a barrier to entry for competitors and strengthening its market leadership in critical process steps.\n\n**ROI Projections:**\nThe return on investment for implementing Single Platform, Multiple Cycle Spacer Deposition and Etch technology is expected to be highly attractive. Initial investment in new equipment would be offset by significant operational savings from reduced material waste, lower energy consumption (due to fewer pump-down/venting cycles), decreased labor for wafer handling, and the direct financial impact of higher yields and faster time-to-market. For a typical foundry, even a 1-2% increase in yield on advanced nodes can result in hundreds of millions of dollars in additional revenue annually, making the ROI compelling and rapid.","faqs":[{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch (US-9852916) is a groundbreaking patent in semiconductor manufacturing. It describes an innovative method for creating critical multi-cycle spacer structures on a silicon wafer. Unlike traditional approaches that require moving the wafer between different machines for deposition and etching, this invention performs all these sequential steps continuously within a single, integrated processing chamber.\n\nThis 'single platform' approach significantly streamlines the fabrication process. It eliminates the inefficiencies, risks of contamination, and process variations that arise from repeatedly transferring wafers between separate tools. Essentially, the patent focuses on achieving higher precision, greater efficiency, and improved yields in the creation of nanoscale features essential for modern microchips.\n\nThe core of the technology involves forming an initial spacer portion, then repeatedly depositing a spacer layer using a first plasma process, and immediately etching it with a second plasma process, all without removing the substrate. This continuous, in-situ cycling is maintained until the complete multi-cycle spacer structure is precisely formed. This integrated methodology represents a paradigm shift in how complex semiconductor components are manufactured.\n\n**Keywords:** semiconductor manufacturing, spacer deposition, plasma etch, single platform processing, multi-cycle, integrated fabrication, US-9852916.","question":"What is Single Platform, Multiple Cycle Spacer Deposition and Etch?"},{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch patent operates on the principle of continuous, in-situ processing. It begins with a semiconductor substrate that already has certain patterned features on its surface. A first portion of the multi-cycle spacer is then formed on the sidewall of one of these patterned features.\n\nThe innovative part is the subsequent, repeated cycle. A new spacer layer is deposited onto the existing structure using what the patent refers to as a 'first plasma process.' This plasma process is carefully controlled to ensure the material forms uniformly and conformally on the intricate surfaces of the chip. Immediately after this deposition, and crucially, without moving the wafer out of the chamber, the newly deposited spacer layer is etched using a 'second plasma process.' This etch process is designed to be highly anisotropic, meaning it removes material primarily from horizontal surfaces while leaving the vertical sidewalls intact, thus defining the precise shape of the spacer.\n\nThis entire deposition-and-etch sequence is then continuously repeated within the same processing chamber for multiple cycles. The system seamlessly transitions between the deposition and etch chemistries and conditions until the desired total thickness and critical dimensions of the multi-cycle spacer are achieved. The key enabler is the sophisticated control system that manages these rapid and precise transitions in a unified environment.\n\n**Keywords:** spacer formation process, plasma deposition, plasma etching, continuous processing, in-situ, semiconductor fabrication, process control, anisotropic etch.","question":"How does Single Platform, Multiple Cycle Spacer Deposition and Etch work?"},{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch patent addresses several critical problems inherent in traditional semiconductor manufacturing, particularly concerning the formation of multi-cycle spacers. Historically, this process involved repeatedly transferring delicate silicon wafers between separate deposition tools and etch tools for each layer. This 'shuttle' method introduced significant inefficiencies and risks.\n\nFirstly, it solved the problem of **contamination risk**. Each wafer transfer exposed the wafer to the ambient environment or different chamber conditions, increasing the likelihood of particulate contamination or unwanted chemical reactions, which can lead to device defects and lower manufacturing yields.\n\nSecondly, the invention tackles **process variability**. Different tools, even when meticulously calibrated, can introduce subtle variations in process parameters (e.g., temperature, gas flow, plasma characteristics). This leads to non-uniformity in critical dimensions and material properties across the wafer and between different production batches, impacting device performance and reliability.\n\nFinally, this patent dramatically improves **throughput and cycle time**. The physical movement of wafers, along with the associated load-lock operations, pump-down/venting cycles, and re-alignment steps, added substantial time to the overall manufacturing process. By consolidating all these steps onto a single platform, the Single Platform, Multiple Cycle Spacer Deposition and Etch significantly reduces processing time, boosting efficiency and accelerating time-to-market for advanced chips.\n\n**Keywords:** manufacturing bottleneck, contamination reduction, process uniformity, cycle time reduction, semiconductor challenges, yield improvement, advanced patterning.","question":"What problem does Single Platform, Multiple Cycle Spacer Deposition and Etch solve?"},{"answer":"The patent US-9852916, titled \"Single Platform, Multiple Cycle Spacer Deposition and Etch,\" was filed on June 27, 2016, and published on December 26, 2017. While the patent document itself does not list the individual inventors or the assignee in the provided abstract, such information is typically found in the full patent text and associated legal records.\n\nGenerally, patents of this nature in the semiconductor industry are often developed by teams of highly specialized engineers and scientists working within major semiconductor equipment manufacturers or large integrated device manufacturers (IDMs). These companies invest heavily in research and development to create proprietary processes and technologies that give them a competitive edge in the highly advanced field of microchip fabrication.\n\nTo identify the specific inventors and the assignee (the company or entity that owns the patent), one would need to consult the full patent filing details on official patent databases. The innovation behind the Single Platform, Multiple Cycle Spacer Deposition and Etch is the result of collective expertise aimed at solving complex manufacturing challenges in nanoscale patterning.\n\n**Keywords:** patent inventors, patent assignee, US-9852916, semiconductor industry R&D, intellectual property, chip manufacturing innovation, patent filing details.","question":"Who invented Single Platform, Multiple Cycle Spacer Deposition and Etch?"},{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch patent offers a multitude of benefits that are critical for advancing semiconductor manufacturing and the broader electronics industry. These advantages stem from its integrated, single-platform approach to multi-cycle spacer formation.\n\nFirstly, a major benefit is **significantly increased manufacturing efficiency and throughput**. By eliminating the need for repeated wafer transfers between separate deposition and etch tools, the overall cycle time for processing is drastically reduced. This means more chips can be produced in less time, leading to higher output and faster time-to-market for new electronic devices.\n\nSecondly, the technology leads to **superior precision and uniformity**. Performing all deposition and etching steps within a single, consistent processing environment minimizes variations in critical dimensions (CDs) and material properties across the wafer. This enhanced control results in higher quality chips with more predictable performance.\n\nThirdly, there's a substantial **reduction in defectivity and an increase in manufacturing yield**. Keeping the wafer in a controlled vacuum environment throughout the entire multi-cycle process virtually eliminates the risk of particulate contamination and unwanted chemical reactions that commonly occur during wafer transfers. Fewer defects mean more functional chips per wafer, which directly translates to lower production costs.\n\nFinally, the Single Platform, Multiple Cycle Spacer Deposition and Etch contributes to **lower operational costs**. While requiring sophisticated equipment, consolidating multiple functionalities into one platform can reduce overall capital expenditure on tools, maintenance costs, and facility footprint compared to operating separate, specialized machines. This comprehensive set of benefits makes this innovation a powerful tool for modern chip fabrication.\n\n**Keywords:** manufacturing benefits, process efficiency, higher throughput, critical dimension control, yield improvement, defect reduction, cost savings, advanced chip fabrication.","question":"What are the key benefits of Single Platform, Multiple Cycle Spacer Deposition and Etch?"},{"answer":"The fundamental difference between Single Platform, Multiple Cycle Spacer Deposition and Etch and prior art lies in its integrated processing approach. Prior art methodologies for multi-cycle spacer formation typically relied on a 'multi-tool' or 'shuttle' system, where wafers were repeatedly moved between separate, dedicated deposition and etch chambers.\n\nIn prior art, a wafer would first undergo a deposition step in one machine, then be transferred to a different machine for etching, and then potentially back to a deposition machine for the next cycle. This meant breaking vacuum, exposing the wafer to different environments, and incurring significant time delays with each transfer. This fragmented process was prone to several issues: increased contamination risk from handling and ambient exposure, process variability due to slight differences between distinct tools, and extended cycle times due to the mechanical transfers and pump-down/venting operations.\n\nIn contrast, the Single Platform, Multiple Cycle Spacer Deposition and Etch patent describes performing both the deposition and etching of spacer layers continuously within a *single, unified processing chamber*. The wafer remains in the same controlled environment throughout all the multi-cycle steps. This eliminates the need for any intermediate transfers, directly mitigating the problems of contamination, process variability, and excessive cycle times inherent in prior art. The innovation is in the seamless integration and rapid, precise switching between distinct plasma processes for deposition and etching within one sophisticated system.\n\n**Keywords:** prior art comparison, integrated process, multi-tool vs single platform, semiconductor innovation, process integration, wafer transfer, manufacturing differences, plasma process.","question":"How is Single Platform, Multiple Cycle Spacer Deposition and Etch different from prior art?"},{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch patent will primarily impact the **semiconductor manufacturing industry**, as it directly addresses a critical process step in the fabrication of advanced microchips. However, its ripple effects will extend across numerous other industries that rely heavily on cutting-edge electronics.\n\nFirstly, **computer hardware and consumer electronics** will see significant benefits. More efficient and precise chip manufacturing leads to smaller, faster, more powerful, and potentially more affordable processors, memory, and specialized chips for smartphones, laptops, tablets, and gaming consoles. This directly enhances product performance and consumer experience.\n\nSecondly, the **artificial intelligence (AI) and data center industries** will be profoundly impacted. The development of advanced AI accelerators, GPUs, and high-performance computing (HPC) solutions demands chips with increasingly intricate and dense architectures. This technology enables the cost-effective and high-yield production of such complex components, fueling further innovation in AI research and deployment.\n\nThirdly, **automotive and aerospace sectors** will benefit from more reliable and powerful embedded systems. As vehicles become more autonomous and connected, they require robust, high-performance chips. The improved quality and reliability offered by the Single Platform, Multiple Cycle Spacer Deposition and Etch will be crucial for safety-critical applications. Lastly, the **Internet of Things (IoT)** and **telecommunications** industries will see advancements, as efficient chip production supports the proliferation of connected devices and next-generation communication infrastructure like 5G and beyond.\n\n**Keywords:** semiconductor industry, chip manufacturing, consumer electronics, AI hardware, data centers, automotive electronics, IoT devices, telecommunications, microelectronics impact.","question":"What industries will Single Platform, Multiple Cycle Spacer Deposition and Etch impact?"},{"answer":"The patent titled \"Single Platform, Multiple Cycle Spacer Deposition and Etch\" is identified by the patent number US-9852916. The **filing date** for this patent was **June 27, 2016**. This is the date when the application for the patent was officially submitted to the patent office.\n\nThe **publication date** for this patent was **December 26, 2017**. This marks the date when the patent was officially granted and published, making its details publicly accessible. The period between the filing and publication dates involves a thorough examination process by patent examiners to ensure the invention meets all patentability requirements, including novelty, non-obviousness, and utility.\n\nThe publication of the Single Platform, Multiple Cycle Spacer Deposition and Etch patent on December 26, 2017, signifies its formal recognition as intellectual property, detailing its claims and specifications. This timestamp is crucial for understanding its place in the timeline of semiconductor manufacturing innovations and its relationship to prior art and subsequent developments in the field.\n\n**Keywords:** patent filing date, patent publication date, US-9852916, intellectual property timeline, patent grant, semiconductor innovation history, patent examination.","question":"When was Single Platform, Multiple Cycle Spacer Deposition and Etch filed/granted?"},{"answer":"The commercial applications of the Single Platform, Multiple Cycle Spacer Deposition and Etch patent are extensive and primarily centered around enhancing the manufacturing capabilities for advanced semiconductor devices. Its core value lies in making the fabrication of complex microchips more efficient, cost-effective, and reliable.\n\nOne major application is in the **production of advanced logic processors**, such as those found in high-performance CPUs and GPUs. These chips utilize intricate structures like FinFETs and future Gate-All-Around (GAA) transistors, which critically depend on precisely formed multi-cycle spacers. This technology enables higher yields and better performance for these cutting-edge components, directly impacting computing power and efficiency.\n\nAnother key area is in the **manufacturing of next-generation memory devices**, particularly 3D NAND flash memory. These memory chips stack layers vertically, requiring numerous, highly uniform spacer structures. The Single Platform, Multiple Cycle Spacer Deposition and Etch facilitates the high-volume, high-yield production of these complex 3D architectures, crucial for solid-state drives (SSDs) and enterprise storage solutions.\n\nFurthermore, this innovation will be applied in the **fabrication of specialized chips for AI accelerators, IoT devices, and automotive electronics**. These applications demand robust, high-performance, and often power-efficient chips, which benefit from the reduced defectivity and improved process control offered by this patent. Equipment manufacturers will integrate this technology into their advanced deposition and etch systems, selling these highly efficient tools to foundries and IDMs globally. This patent essentially provides a foundational technology for producing the 'brains' of almost all modern electronic systems more effectively.\n\n**Keywords:** commercial applications, advanced logic, 3D NAND, FinFET fabrication, AI accelerators, IoT chips, automotive semiconductors, semiconductor equipment, high-volume manufacturing.","question":"What are the commercial applications of Single Platform, Multiple Cycle Spacer Deposition and Etch?"},{"answer":"The Single Platform, Multiple Cycle Spacer Deposition and Etch patent, by establishing a new benchmark for integrated processing, opens doors for numerous future developments in semiconductor manufacturing. Its inherent efficiency and precision provide a strong foundation for continued innovation.\n\nOne expected development is the **integration of even more process steps** within the single platform. Beyond just deposition and etch, future systems might incorporate in-situ cleaning, metrology, or annealing steps, creating an even more comprehensive and efficient single-chamber processing environment. This hyper-integration would further reduce wafer handling and improve overall process control.\n\nAnother significant area of development will be in **advanced process control and optimization through AI and machine learning**. The continuous, in-situ nature of the Single Platform, Multiple Cycle Spacer Deposition and Etch provides a rich stream of real-time data. AI algorithms could be developed to monitor, predict, and adapt process parameters on the fly, optimizing yields, reducing variability, and even self-correcting for minor process drifts. This could lead to fully autonomous and self-optimizing fabrication steps.\n\nFurthermore, we can anticipate the **exploration of novel materials and plasma chemistries**. The flexibility of a single, integrated platform allows for easier experimentation and implementation of new precursor gases or etchants that might offer even greater selectivity, conformality, or damage-free processing. This will be crucial for developing next-generation devices with exotic materials. Lastly, this technology will be foundational for the **development of increasingly complex 3D integrated circuits (3D ICs) and advanced packaging solutions**, where precise, multi-layer patterning across many stacked layers is essential. The Single Platform, Multiple Cycle Spacer Deposition and Etch is not just a solution for today but a stepping stone for the manufacturing challenges of tomorrow's most advanced electronics.\n\n**Keywords:** future semiconductor trends, process integration, AI in manufacturing, machine learning, novel materials, plasma chemistry, 3D ICs, advanced packaging, autonomous fabrication.","question":"What are the future developments expected for Single Platform, Multiple Cycle Spacer Deposition and Etch?"}],"topics":["Single Platform, Multiple Cycle Spacer Deposition and Etch","semiconductor manufacturing","spacer deposition","plasma etch","chip fabrication","intricate","semiconductor","fabrication"],"tech_cluster":null},"seo":{"title":"Single Platform, Multiple Cycle Spacer Deposition and Etch - Patent US-9852916","description":"Discover the Single Platform, Multiple Cycle Spacer Deposition and Etch patent. This innovation streamlines chip manufacturing, boosting efficiency, precision & yield.","keywords":["Single Platform, Multiple Cycle Spacer Deposition and Etch","semiconductor manufacturing","spacer deposition","plasma etch","chip fabrication","nanoscale patterning","integrated circuits","process efficiency","FinFET","3D NAND","patent US-9852916","advanced manufacturing","microelectronics","yield improvement"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852916","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852916","citation_suggestion":"Patentable. \"Single platform, multiple cycle spacer deposition and etch\" (US-9852916). https://patentable.app/patents/US-9852916","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852916","json":"https://patentable.app/api/llm-context/US-9852916","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:04:20.939Z"}