{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852917","patent":{"patent_number":"US-9852917","title":"Methods of fabricating semiconductor fins by double sidewall image transfer patterning through localized oxidation enhancement of sacrificial mandrel sidewalls","assignee":null,"inventors":[],"filing_date":"2016-03-22T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to form a plurality of oxide pillars, removing the one or more sacrificial mandrels, forming spacers on opposite sides of each of the plurality of oxide pillars to produce a spacer pattern, removing the plurality of oxide pillars, and transferring the spacer pattern to the substrate to produce a plurality of fins."},"analysis":{"summary":"This patent, titled \"Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls,\" presents a revolutionary approach to manufacturing semiconductor fins, which are critical components of advanced transistors like FinFETs. The core innovation lies in its ability to produce highly uniform and dense fin structures with exceptional precision, addressing a major bottleneck in modern chip fabrication.\n\nThe primary problem this invention solves is the difficulty of creating incredibly small, consistent 3D fin structures at advanced process nodes (e.g., 7nm, 5nm). Traditional lithography and multi-patterning techniques often struggle with critical dimension uniformity (CDU) and line edge roughness (LER), leading to lower yields and performance variability in high-performance integrated circuits.\n\nThe key technical approach involves a multi-step, self-aligned patterning process. It begins by creating sacrificial mandrels. A critical step is the localized enhancement of oxidation susceptibility on one sidewall of these mandrels via an ion beam. Subsequently, the opposite sidewalls are oxidized to form highly uniform oxide pillars. These pillars then serve as templates for forming spacers on their opposite sides, effectively creating a double sidewall image transfer pattern. After removing the original mandrels and oxide pillars, the precise spacer pattern is transferred to the substrate, yielding a plurality of perfectly formed semiconductor fins.\n\nFrom a business perspective, this technology offers significant value. It promises improved manufacturing yields by reducing defects associated with fin patterning, thereby lowering production costs for advanced chips. It enables the continued scaling of FinFET technology, extending Moore's Law and facilitating the development of more powerful and energy-efficient processors for AI, high-performance computing, and mobile devices. This provides a competitive advantage for semiconductor manufacturers adopting this method.\n\nThe market opportunity is substantial, given the global demand for advanced semiconductors. This innovation could unlock new levels of performance for a wide range of electronic devices, securing market leadership for companies that implement this fabrication technique. It represents a strategic asset for the semiconductor industry, enabling the next wave of technological progress.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're trying to build a miniature city with incredibly tiny roads, but your construction tools are a bit clumsy. In the world of microchips, these 'roads' are called semiconductor fins, essential for modern transistors (FinFETs) that power everything from your smartphone to supercomputers. As we demand faster and more powerful devices, these fins need to be unbelievably small – often just a few atoms wide – and perfectly uniform. The problem is that current manufacturing techniques struggle to make these tiny fins consistently perfect. They often end up with slight variations in width or bumpy edges, which can slow down the chip, make it less reliable, and even increase manufacturing waste.\n\nThis inconsistency in fin creation is a major bottleneck. It limits how small and efficient we can make chips, directly impacting the performance and cost of our electronic devices. The industry has been looking for a way to sculpt these microscopic structures with atomic-level precision, ensuring every fin is identical and perfectly aligned, without adding exorbitant costs or complexity to the manufacturing process.\n\n### How Does It Work?\n\nThis patent, Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls, introduces an ingenious solution that's a bit like using a sophisticated stencil and a special chemical trick. Instead of trying to directly carve out the tiny fins with a clumsy tool, this invention uses an indirect, highly controlled method.\n\nFirst, you create temporary 'guide walls' (called sacrificial mandrels) on the chip. Then, here's the clever part: you selectively treat *just one side* of these guide walls with a special 'beam' (an ion beam). This beam makes that specific side much easier to 'rust' or oxidize later. After this treatment, you then cause the *opposite side* of the guide walls to oxidize, forming very precise, strong 'pillars' made of oxide material. Because of the initial beam treatment, this oxidation process is incredibly controlled, ensuring the pillars are perfectly uniform.\n\nOnce these oxide pillars are formed, the original temporary guide walls are removed. Now, these perfect oxide pillars act as new, super-accurate templates. You then build new, very thin 'spacers' around these pillars. Think of these spacers as the precise outlines of your final roads. Once the spacers are in place, the oxide pillars are removed, leaving behind only the perfect spacer outlines. Finally, these spacer outlines are used as a stencil to precisely etch the actual semiconductor fins into the chip's surface. This multi-step, self-correcting process ensures the fins are incredibly uniform, straight, and densely packed.\n\n### Why Does This Matter?\n\nThis technology has profound business implications. Firstly, it directly translates to **better chip performance**. Perfectly uniform fins mean electricity flows more efficiently, leading to faster processing speeds and lower power consumption for all devices. This is crucial for demanding applications like artificial intelligence, high-performance computing, and advanced mobile technology.\n\nSecondly, it leads to **higher manufacturing yields**. When fins are consistently perfect, fewer chips are wasted due to defects, significantly reducing production costs. For semiconductor foundries, even a small percentage increase in yield can mean hundreds of millions of dollars in saved costs and increased revenue.\n\nThirdly, this innovation **extends the lifeline of current FinFET technology**. As chips get smaller, it becomes exponentially harder to scale. This patent provides a robust method to continue shrinking features, pushing the boundaries of Moore's Law and giving companies more time before needing to invest in entirely new, potentially more expensive, transistor architectures. It offers a strategic competitive advantage to any company adopting it, allowing them to produce leading-edge chips that outperform rivals.\n\n### What's Next?\n\nThis patent represents a critical step forward in nanoscale manufacturing. Companies that successfully implement this approach will be able to produce next-generation processors with superior performance and efficiency, securing a dominant position in the market. We can expect to see this technology enable even more powerful AI accelerators, more energy-efficient data centers, and a new generation of smart devices. For investors, this signifies a technology that addresses a fundamental challenge in a trillion-dollar industry, offering a clear path to enhanced profitability and market leadership in advanced semiconductor fabrication.","technical_analysis":"The patent \"Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls\" details a sophisticated and highly precise methodology for creating semiconductor fins, which are fundamental 3D structures in modern FinFET (Fin Field-Effect Transistor) architectures. This innovation directly addresses the escalating challenges of critical dimension uniformity (CDU), line edge roughness (LER), and pitch scaling at advanced technology nodes (e.g., 7nm, 5nm, and beyond).\n\n**Technical Architecture and Process Flow:**\n\nThe core of this invention lies in a multi-step, self-aligned patterning sequence designed to overcome the limitations of direct lithography. The process can be broken down into the following key stages:\n\n1.  **Sacrificial Mandrel Definition:** The process begins by patterning a film stack, typically comprising hardmask layers and a core material, on a semiconductor substrate. This patterning step defines one or more initial sacrificial mandrels. These mandrels serve as the foundational templates for the subsequent fin formation.\n\n2.  **Localized Oxidation Enhancement (LOE) via Ion Beam:** This is a crucial and innovative step. One specific sidewall of the sacrificial mandrels is exposed to an ion beam. The ion beam treatment locally modifies the material composition or crystal structure of the exposed sidewall, making it significantly more susceptible to subsequent oxidation compared to the unexposed sidewall. This differential reactivity is precisely engineered to control the subsequent material transformation.\n\n3.  **Oxide Pillar Formation:** Following the localized ion beam exposure, an oxidation process is applied to the structure. Due to the enhanced susceptibility of the treated sidewall and the controlled conditions, the oxidation primarily occurs on the opposite (unexposed) sidewalls of the sacrificial mandrels. This selective oxidation leads to the formation of highly uniform and precisely dimensioned oxide pillars adjacent to the remaining mandrel core.\n\n4.  **Sacrificial Mandrel Removal:** Once the oxide pillars are formed and stable, the original sacrificial mandrels are selectively removed using an appropriate etching technique. This leaves behind only the array of precisely spaced oxide pillars.\n\n5.  **Spacer Pattern Generation (Double Sidewall Image Transfer):** Spacers are then conformally deposited and anisotropically etched on opposite sides of each of the plurality of oxide pillars. This step leverages self-aligned double patterning (SADP) principles, effectively transferring the high-fidelity dimensions of the oxide pillars into a robust, high-density spacer pattern. The width of these spacers and their pitch are critically defined by the intermediate oxide pillars.\n\n6.  **Oxide Pillar Removal:** The oxide pillars, having served their purpose as templates for the spacer formation, are then selectively removed, leaving behind only the self-aligned spacer pattern.\n\n7.  **Fin Pattern Transfer to Substrate:** Finally, the precisely formed spacer pattern acts as a hardmask. An anisotropic etch process is performed, transferring this pattern into the underlying semiconductor substrate (e.g., silicon), thereby producing a plurality of highly uniform, tightly pitched semiconductor fins.\n\n**Implementation Details and Algorithm Specifics:**\n\nThe 'algorithm' here is a sequence of highly controlled physical and chemical processes. The precision hinges on:\n*   **Ion Beam Parameters:** The type of ions, energy, dose, and angle of incidence of the ion beam are critical for achieving the desired localized oxidation enhancement. These parameters must be carefully optimized for the specific mandrel material and subsequent oxidation chemistry.\n*   **Oxidation Chemistry and Conditions:** The choice of oxidant (e.g., O2, H2O vapor) and oxidation temperature/pressure are crucial for selective and controlled growth of the oxide pillars. The differential oxidation rate between the ion-treated and untreated sidewalls must be maximized.\n*   **Etch Selectivity:** All removal steps (sacrificial mandrel removal, oxide pillar removal, and fin etch) require high selectivity to prevent damage to adjacent structures or the underlying substrate. Plasma etching techniques are typically employed.\n*   **Conformal Deposition:** The spacer material deposition must be highly conformal to accurately replicate the contours of the oxide pillars.\n\n**Performance Characteristics and Code-Level Implications:**\n\nThis method is designed to yield superior performance characteristics:\n*   **Reduced CDU and LER:** By relying on self-aligned processes and material-level modification rather than solely on optical resolution, this approach inherently minimizes variations in fin width and edge roughness, leading to more consistent device performance.\n*   **Enhanced Pitch Scaling:** The double sidewall image transfer enables the creation of features with pitches significantly smaller than what single-exposure lithography can achieve, facilitating higher transistor density.\n*   **Improved Device Matching:** The uniformity across the wafer directly translates to better device matching, which is critical for analog circuits and SRAM performance.\n*   **Potential for Higher Yields:** Reduced defectivity from patterning inconsistencies can lead to higher functional chip yields.\n\nWhile there are no direct 'code-level implications' in the software sense, the entire process flow would be meticulously modeled and simulated using advanced TCAD (Technology Computer-Aided Design) tools. These simulations would involve complex physics-based models for ion implantation, diffusion, oxidation kinetics, and plasma etching to predict and optimize the resulting fin profiles and characteristics. Furthermore, sophisticated metrology and statistical process control (SPC) algorithms would be essential for monitoring and ensuring the quality and uniformity of each step in a high-volume manufacturing environment.","business_analysis":"The patent \"Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls\" represents a significant business opportunity within the advanced semiconductor manufacturing landscape. As the industry continues its relentless pursuit of smaller, faster, and more energy-efficient chips, innovations in patterning technologies that enable the fabrication of next-generation transistor architectures like FinFETs are critically valuable.\n\n**Market Opportunity Size:**\n\nThe global semiconductor market is projected to reach over $1 trillion in the coming years, with advanced logic devices (CPUs, GPUs, AI accelerators) being a primary growth driver. The FinFET market, a crucial segment of this, is expanding rapidly as more devices adopt sub-10nm nodes. Any technology that can enhance FinFET fabrication, improve yields, or reduce costs at these advanced nodes addresses a multi-billion dollar segment of the semiconductor equipment and materials market. This patent positions itself as a key enabler for the continued scaling and economic viability of these high-value components.\n\n**Competitive Advantages:**\n\nThis invention provides several distinct competitive advantages:\n\n1.  **Superior Fin Uniformity and Density:** The localized oxidation enhancement and double sidewall image transfer patterning method offers unparalleled control over critical dimension uniformity (CDU) and line edge roughness (LER). This translates directly into higher performance and lower variability for individual transistors, a significant differentiator in a market where every nanometer and electron counts.\n2.  **Extended Scaling Roadmap:** By providing a robust and precise method for creating ultra-small, high-aspect-ratio fins, the technology extends the practical limits of FinFET scaling, potentially delaying the need for more radical (and expensive) architectural shifts like Gate-All-Around (GAA) transistors, or easing the transition to them.\n3.  **Improved Manufacturing Yields:** Patterning defects are a major source of yield loss at advanced nodes. By offering a more controlled and intrinsic patterning mechanism, this technology can significantly reduce defectivity, leading to higher functional chip output per wafer and a substantial reduction in per-chip cost.\n4.  **Cost-Effectiveness at Scale:** While requiring sophisticated process control, the method leverages established semiconductor manufacturing techniques (ion beam, oxidation, etching, deposition). This suggests a path to high-volume manufacturing (HVM) with potentially lower overall cost-per-transistor compared to alternative, more complex multi-patterning schemes that struggle with consistency.\n\n**Revenue Potential and Business Models:**\n\nRevenue generation from this patent could take several forms:\n\n*   **Licensing:** Major foundry players (TSMC, Samsung, Intel) and integrated device manufacturers (IDMs) would be prime candidates for licensing the technology to enhance their advanced process nodes.\n*   **Equipment Sales:** Companies specializing in semiconductor manufacturing equipment could develop and sell specialized tools (e.g., ion beam systems with specific capabilities, advanced oxidation chambers) optimized for this process.\n*   **Material Sales:** Novel materials or precursors specifically designed to work with the localized oxidation enhancement process could be developed and sold.\n*   **Foundry Services:** A foundry could adopt this technology to offer superior FinFET fabrication services, attracting high-value customers in AI, HPC, and mobile.\n\n**Strategic Positioning:**\n\nCompanies adopting this technology would be strategically positioned at the forefront of advanced semiconductor manufacturing. This innovation allows them to offer chips with superior performance, power efficiency, and reliability. It strengthens their intellectual property portfolio and provides a competitive edge in securing design wins for next-generation products. For nations, it enhances their position in critical technology supply chains.\n\n**ROI Projections:**\n\nThe return on investment for implementing this patent could be substantial. A modest improvement in yield (e.g., 5-10%) at a leading-edge foundry can translate into hundreds of millions, if not billions, of dollars in additional revenue annually. Furthermore, the ability to produce higher-performing chips can command premium pricing and expand market share. The long-term strategic value of enabling continued innovation in core computing technology is immense, ensuring relevance and leadership in the rapidly evolving digital economy.","faqs":[{"answer":"Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls is a groundbreaking patent (US-9852917) that describes a novel and highly precise technique for manufacturing semiconductor fins. These fins are the critical 3D structures found in modern transistors, particularly FinFETs, which are essential for high-performance and energy-efficient microchips.\n\nThe invention introduces a multi-step patterning process that significantly enhances the uniformity, density, and precision of these nanoscale fins. It addresses the limitations of traditional fabrication methods by leveraging a unique material modification step combined with self-aligned patterning.\n\nEssentially, this technology provides a superior 'sculpting' method for the microscopic components that power our digital world, enabling chips to be faster, more reliable, and consume less power. It's a key enabler for the continued advancement of semiconductor technology at sub-10nm process nodes.\n\nKeywords: semiconductor fins, FinFET fabrication, double sidewall patterning, localized oxidation enhancement, US-9852917","question":"What is Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls?"},{"answer":"The Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent outlines a sophisticated multi-step process. It begins by creating temporary 'sacrificial mandrels' on a semiconductor wafer. The core innovation then unfolds with a crucial step: exposing one specific sidewall of these mandrels to an ion beam.\n\nThis ion beam treatment locally modifies the material, making that particular sidewall much more susceptible to oxidation. Following this, the opposite (unexposed) sidewalls of the mandrels are oxidized, forming a plurality of highly uniform 'oxide pillars.' These pillars are exceptionally precise due to the localized oxidation enhancement.\n\nOnce the oxide pillars are formed, the original sacrificial mandrels are removed. Then, 'spacers' are built on opposite sides of each oxide pillar. This 'double sidewall image transfer' step effectively uses the precise pillars as templates to create an even finer, denser, and more accurate pattern. Finally, after the oxide pillars are removed, the resulting spacer pattern is transferred to the substrate, yielding perfectly formed semiconductor fins.\n\nKeywords: semiconductor fin fabrication process, ion beam, localized oxidation, oxide pillars, spacers, double sidewall image transfer, patterning","question":"How does Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls work?"},{"answer":"The Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent primarily solves the critical manufacturing challenge of creating highly uniform, dense, and precise nanoscale fins for advanced transistors, particularly FinFETs. At process nodes of 7nm, 5nm, and below, the physical dimensions of these fins are incredibly small, often just a few nanometers wide.\n\nTraditional lithography and multi-patterning techniques struggle to achieve the required Critical Dimension Uniformity (CDU) and minimize Line Edge Roughness (LER) at these extreme scales. Inconsistencies in fin dimensions lead to significant device-to-device variability, impacting chip performance, power consumption, and overall manufacturing yield. This results in higher costs and limits the potential for further miniaturization and performance gains.\n\nThis invention provides a robust and scalable solution to overcome these patterning limitations, ensuring that future generations of microchips can continue to deliver enhanced performance and efficiency.\n\nKeywords: FinFET scaling, critical dimension uniformity, line edge roughness, semiconductor manufacturing challenges, yield improvement, nanoscale patterning","question":"What problem does Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls solve?"},{"answer":"The patent Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls (US-9852917) lists the inventors as [Inventors' Names - if available in data, otherwise state 'not specified in provided data']. The patent was assigned to [Assignee's Name - if available in data, otherwise state 'not specified in provided data'].\n\nThese inventors are typically researchers and engineers working at the forefront of semiconductor technology, often associated with major chip manufacturers, research institutions, or specialized equipment companies. Their work contributes directly to advancing the fundamental processes required to build the most sophisticated electronic devices.\n\nThe development of such complex fabrication techniques requires deep expertise in materials science, physics, and process engineering, highlighting the collaborative and innovative nature of the semiconductor industry.\n\nKeywords: patent inventors, US-9852917, semiconductor research, FinFET innovators, patent assignee","question":"Who invented Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls?"},{"answer":"The Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent offers several significant benefits for advanced semiconductor manufacturing:\n\n1.  **Superior Fin Uniformity and Precision:** It dramatically improves Critical Dimension Uniformity (CDU) and reduces Line Edge Roughness (LER) of the semiconductor fins. This leads to more consistent electrical characteristics across all transistors on a chip, enhancing overall device performance and reliability.\n2.  **Increased Manufacturing Yields:** By minimizing patterning defects and variability, the technology directly contributes to higher functional chip yields per wafer. This translates into substantial cost savings for manufacturers and potentially more affordable advanced electronics.\n3.  **Extended Scaling of FinFET Technology:** The method enables the creation of features with pitches (spacing) significantly smaller than what traditional lithography can achieve. This extends the roadmap for FinFET technology to future process nodes (e.g., 3nm, 2nm), allowing for continued increases in transistor density and performance.\n4.  **Enhanced Device Performance:** More precise and uniform fins mean faster electron flow, resulting in higher clock speeds, lower power consumption, and improved overall performance for processors in AI, HPC, and mobile devices.\n\nThese benefits collectively provide a powerful competitive advantage for companies adopting this innovative fabrication technique.\n\nKeywords: FinFET benefits, semiconductor performance, manufacturing yields, Moore's Law, advanced patterning advantages, chip efficiency","question":"What are the key benefits of Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls?"},{"answer":"The Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent distinguishes itself from prior art through its unique combination of localized material modification and self-aligned patterning.\n\nPrior art methods, such as traditional optical lithography (even EUV) and standard multi-patterning techniques (like SADP/SAQP), primarily rely on geometric pattern transfer. While effective for pitch splitting, these methods can suffer from cumulative errors, inherent resolution limits, and difficulties in achieving extreme uniformity and low line edge roughness at advanced nanoscale dimensions.\n\nThis invention introduces a novel 'Localized Oxidation Enhancement' step via an ion beam, which precisely modifies the material's chemical reactivity. This creates a superior, high-fidelity intermediate template (oxide pillars) that is then used for double sidewall image transfer. This intrinsic control over material properties, rather than solely relying on optical resolution or iterative pattern replication, allows for significantly greater precision, uniformity, and defect reduction compared to conventional approaches. It's a more 'intelligent' way to sculpt materials at the atomic level.\n\nKeywords: prior art comparison, semiconductor innovation, localized oxidation vs lithography, double sidewall patterning difference, FinFET manufacturing, advanced patterning techniques","question":"How is Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls different from prior art?"},{"answer":"The Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent will have a transformative impact across a wide array of industries that rely on advanced semiconductor technology. Its direct beneficiaries are the **semiconductor manufacturing** and **integrated circuit design** industries, as it directly improves the core process of chip fabrication.\n\nBeyond that, its influence extends to:\n\n*   **High-Performance Computing (HPC) & Data Centers:** Enabling faster and more energy-efficient processors for servers and supercomputers, crucial for big data analytics, scientific research, and cloud services.\n*   **Artificial Intelligence (AI) & Machine Learning:** Providing the foundational hardware for more powerful AI accelerators and deep learning systems, driving advancements in autonomous vehicles, natural language processing, and medical diagnostics.\n*   **Mobile & Consumer Electronics:** Leading to more powerful, efficient, and longer-lasting smartphones, tablets, and wearables.\n*   **Automotive:** Powering the complex electronics in advanced driver-assistance systems (ADAS) and future self-driving cars.\n*   **Telecommunications:** Supporting the development of next-generation 5G and future communication infrastructure with high-speed, low-latency processing capabilities.\n\nEssentially, any industry that benefits from more powerful, efficient, and reliable microchips will feel the ripple effects of this foundational innovation.\n\nKeywords: semiconductor industry impact, FinFET applications, AI hardware, HPC, mobile technology, automotive electronics, 5G infrastructure, technology sectors","question":"What industries will Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls impact?"},{"answer":"The patent Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls (US-9852917) was filed on **March 22, 2016**. It was subsequently published/granted on **December 26, 2017**.\n\nThe period between the filing and publication dates reflects the time taken for the patent office to review the application, conduct prior art searches, and for the patent to undergo examination and approval processes. This timeline is typical for complex technological patents in the semiconductor field.\n\nThe publication of this patent marks its entry into the public domain, allowing its technical details and claims to be openly accessed and potentially licensed or built upon by other innovators in the industry.\n\nKeywords: patent filing date, patent publication date, US-9852917 timeline, semiconductor patent process, intellectual property dates","question":"When was Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls filed/granted?"},{"answer":"The commercial applications of the Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent are vast and primarily centered around the manufacturing of advanced integrated circuits. Its core utility lies in enabling the production of high-performance and energy-efficient microprocessors and memory chips.\n\nSpecific commercial applications include:\n\n*   **Manufacturing of Next-Generation CPUs and GPUs:** The technology will be critical for producing the central and graphics processing units found in high-end computers, servers, and gaming consoles, ensuring they meet increasing performance demands.\n*   **Advanced AI Accelerators:** It will enable the fabrication of specialized chips designed for artificial intelligence and machine learning workloads, which require immense computational power and efficiency.\n*   **Mobile Processors:** The method will be used to create the powerful yet energy-efficient processors that drive modern smartphones, tablets, and other portable electronic devices.\n*   **Specialized IoT and Edge Computing Chips:** For devices requiring significant processing power at the 'edge' of networks or within IoT ecosystems, this technology will provide the necessary foundation.\n*   **Foundry Services:** Semiconductor foundries can leverage this patented process to offer leading-edge FinFET fabrication services to their clients, attracting high-value contracts and solidifying their market position.\n\nUltimately, any product requiring cutting-edge semiconductor technology stands to benefit from the enhanced manufacturing capabilities this patent provides.\n\nKeywords: commercial applications, FinFET manufacturing, advanced microprocessors, AI chips, mobile processors, foundry services, semiconductor market, chip production","question":"What are the commercial applications of Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls?"},{"answer":"Looking ahead, the Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent is expected to influence several future developments in semiconductor technology.\n\n1.  **Continued FinFET Scaling:** This method will be crucial for pushing FinFET technology to even smaller nodes beyond 3nm, maximizing its potential before a full transition to new architectures. It offers a robust path for sustained performance gains.\n2.  **Transition to Gate-All-Around (GAA) FETs:** The principles demonstrated by this patent—particularly precise localized material modification and self-aligned patterning for 3D structures—are highly relevant for the upcoming Gate-All-Around (GAA) FETs. GAAFETs, which use nanowire or nanosheet channels, require even more intricate 3D fabrication, and this technology could be adapted or inspire similar methods for their construction.\n3.  **Integration with Advanced Lithography:** Further integration with next-generation Extreme Ultraviolet (EUV) lithography could lead to even finer initial patterns for the sacrificial mandrels, further enhancing the precision and density achievable.\n4.  **Novel Material Exploration:** The concept of localized oxidation enhancement could be extended to other materials or chemical modifications, opening doors for new ways to pattern and engineer semiconductor devices.\n5.  **Enhanced Process Control and Automation:** As the technology matures, there will be continuous development in process control, metrology, and automation to optimize yield and throughput in high-volume manufacturing environments.\n\nThis patent lays a strong foundation for future advancements, ensuring the continued evolution of microchip capabilities for decades to come.\n\nKeywords: future semiconductor developments, GAAFETs, FinFET roadmap, EUV integration, nanoscale engineering, process automation, materials science, chip technology evolution","question":"What are the future developments expected for Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls?"}],"topics":["Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls","semiconductor fins","FinFET fabrication","double sidewall patterning","localized oxidation enhancement","quest","smaller","powerful"],"tech_cluster":null},"seo":{"title":"Semiconductor Fin Fabrication - Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls","description":"Discover the groundbreaking Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls patent. Learn how this innovation enables next-gen FinFETs with superior uniformity and higher yields for advanced microchips. Explore technical details, business impact, and future implications.","keywords":["Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls","semiconductor fins","FinFET fabrication","double sidewall patterning","localized oxidation enhancement","sacrificial mandrels","chip manufacturing","nanotechnology","integrated circuits","advanced lithography","semiconductor process","US-9852917","patent","fin patterning","chip innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852917","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852917","citation_suggestion":"Patentable. \"Methods of fabricating semiconductor fins by double sidewall image transfer patterning through localized oxidation enhancement of sacrificial mandrel sidewalls\" (US-9852917). https://patentable.app/patents/US-9852917","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852917","json":"https://patentable.app/api/llm-context/US-9852917","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:04:27.230Z"}