{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852920","patent":{"patent_number":"US-9852920","title":"Etch system and method for single substrate processing","assignee":null,"inventors":[],"filing_date":"2016-02-09T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide."},"analysis":{"summary":"The Etch System and Method for Single Substrate Processing patent (US-9852920) introduces a groundbreaking solution to a critical challenge in semiconductor manufacturing: the trade-off between etch rate and selectivity. This innovation provides a method and system explicitly designed for single substrate processing, aiming to significantly increase both the etch rate and the etch selectivity of a masking layer over underlying silicon or silicon oxide layers.\n\nAt its core, the invention involves placing a substrate into an etch processing chamber, where it is exposed to a precisely controlled mixture. This mixture is formed by combining a supply of steam water vapor, maintained at an elevated pressure, with a specialized treatment liquid engineered for selective etching. By dynamically controlling the injection and flow of this combined liquid and steam water vapor mixture, the system ensures that target etch rates and target etch selectivity ratios are consistently achieved and maintained.\n\nThe problem this patent solves is the long-standing difficulty in simultaneously optimizing etching speed and precision. Traditional methods often require sacrificing one for the other, leading to either slower production or increased defects. This technology overcomes this by creating an optimized, dynamic etching environment that minimizes damage to sensitive underlying layers while maximizing throughput.\n\nThe business value and applications are substantial. Semiconductor manufacturers can expect higher yields, reduced material waste, and significantly improved processing efficiency. This directly translates to lower production costs and faster time-to-market for advanced microelectronic devices. The market opportunity is immense, as the demand for smaller, more powerful, and defect-free chips continues to grow exponentially across all sectors, from consumer electronics to artificial intelligence and automotive.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're building tiny, intricate LEGO structures, but instead of plastic bricks, you're working with microscopic layers of materials on a silicon wafer – essentially, the foundation of every computer chip. A crucial step in this process is 'etching,' where you precisely remove unwanted material to create the patterns that form the chip's circuits. The big problem has always been a trade-off: you could etch very quickly, but often at the risk of being imprecise and damaging the valuable layers underneath. Or, you could be incredibly precise, but the process would be painstakingly slow, hindering production and driving up costs. This dilemma creates bottlenecks in manufacturing, making it harder and more expensive to produce the advanced chips our world increasingly demands.\n\nExisting solutions often involve choosing between speed or precision, or using complex, multi-step processes that add time and expense. As chips get smaller and more complex, these limitations become critical, affecting everything from your smartphone's performance to the cost of AI infrastructure.\n\n### How Does It Work?\n\nThe **Etch System and Method for Single Substrate Processing** patent (US-9852920) introduces an ingenious solution. Think of it like a highly specialized, intelligent spray gun for your microscopic LEGOs. Instead of just one type of spray, this system uses two components: a high-pressure steam water vapor and a special liquid chemical specifically designed to 'eat away' only the unwanted material (the masking layer) without harming the good stuff (the silicon or silicon oxide layer).\n\nHere’s the clever part: these two components aren't applied separately. They are combined and then precisely injected into a chamber where a single silicon wafer is being processed. The system then continuously monitors the etching process in real-time. It's like having a super-smart robot adjusting the spray's mix and flow *as it's happening* to ensure two things simultaneously: it's removing material at a target speed, and it's doing so with pinpoint accuracy, without touching the layers you want to keep. This dynamic control is key – it's not a static recipe, but an adaptive process that ensures optimal results for each individual wafer.\n\n### Why Does This Matter?\n\nThis innovation matters immensely because it breaks the long-standing trade-off in semiconductor manufacturing. For businesses, this means:\n\n*   **Higher Yields:** More good chips per wafer. If a manufacturer can increase their yield by even a few percentage points, it can translate into hundreds of millions of dollars in additional revenue, especially for high-volume, high-value chips.\n*   **Faster Time-to-Market:** With increased etch rates, chips can be produced faster, allowing companies to bring new products to market more quickly and capture market share.\n*   **Reduced Costs:** Fewer defective chips mean less wasted material and less need for expensive rework. The efficiency gains also reduce the operational costs associated with fabrication.\n*   **Enabling Future Technology:** This level of precision and control is essential for manufacturing the next generation of microchips with even smaller features and more complex 3D architectures. It's a foundational technology for advancements in AI, IoT, high-performance computing, and more.\n\nEssentially, this patent provides a competitive edge, allowing companies to produce better chips, faster, and more cost-effectively, which is a powerful combination in today's cutthroat tech landscape.\n\n### What's Next?\n\nThis technology is poised for significant adoption in advanced semiconductor fabrication plants. We can expect to see equipment manufacturers integrating these principles into their next-generation etching tools. Its ability to handle single substrates with such precision makes it ideal for highly sensitive processes and emerging materials. Over time, this approach could become a standard for advanced nodes, driving further innovation in materials science and process control. For investors, this represents an opportunity in a critical, high-growth segment of the technology supply chain, with potential for substantial returns as the demand for high-performance, cost-efficient microchips continues its upward trajectory.","technical_analysis":"The **Etch System and Method for Single Substrate Processing** patent (US-9852920) represents a significant technical advancement in the field of semiconductor fabrication, particularly in the critical etching step for single substrate processing. The core innovation lies in its ability to simultaneously optimize etch rate and etch selectivity, a long-standing challenge in microchip manufacturing. This is achieved through a precisely controlled, dynamic chemical delivery system.\n\n**Technical Architecture:**\n\nThe system is designed around a single substrate processing chamber, which is crucial for ensuring uniform etching across the entire wafer surface. Key architectural components include:\n\n1.  **Substrate Loading/Unloading Module:** Facilitates precise and contamination-free handling of individual wafers.\n2.  **Etch Processing Chamber:** A vacuum-compatible chamber optimized for gas-phase and liquid-phase interactions, with precise temperature and pressure control capabilities.\n3.  **Steam Water Vapor Generation and Delivery System:** Generates and delivers steam water vapor at elevated pressure. This system includes heating elements, pressure regulators, and mass flow controllers to ensure a stable and adjustable vapor supply.\n4.  **Treatment Liquid Supply System:** Stores and delivers the specialized treatment liquid. This typically involves precision pumps, flow meters, and potentially temperature control for the liquid itself.\n5.  **Mixing and Injection Manifold:** This is a critical interface where the steam water vapor and treatment liquid are combined. The design of this module ensures efficient and homogeneous mixing before injection into the chamber. It may incorporate atomizers or nebulizers for fine dispersion.\n6.  **Process Control Unit (PCU):** The 'brain' of the system. This unit receives real-time feedback from in-situ sensors (e.g., optical emission spectroscopy, etch endpoint detectors, mass spectrometers) within the etch chamber. It then dynamically adjusts the flow rates, pressure, and potentially temperature of both the steam water vapor and the treatment liquid via a sophisticated feedback control loop.\n\n**Implementation Details and Algorithm Specifics:**\n\nThe method outlined in the patent involves several key steps:\n\n*   **Substrate Placement:** The substrate, comprising a masking layer (e.g., photoresist, hard mask) and an underlying layer of silicon or silicon oxide, is loaded into the chamber.\n*   **Mixture Generation:** Separate supplies of high-pressure steam water vapor and the selective treatment liquid are prepared. The treatment liquid is formulated to preferentially etch the masking layer over the silicon/silicon oxide with a high selectivity ratio.\n*   **Combined Injection:** The steam water vapor and treatment liquid are combined, likely at or near the point of injection, to form a reactive mixture. Injecting them as a combined stream ensures intimate contact and reaction within the etching zone.\n*   **Dynamic Flow Control:** The core algorithmic innovation lies here. The PCU continuously monitors the etching process. Based on predefined target etch rates and selectivity ratios, and real-time process data, the PCU adjusts the flow rates and possibly the mixing ratio of the steam and liquid. This adaptive control allows the system to compensate for process variations, maintain desired performance, and prevent over-etching or under-etching. For instance, if the etch rate deviates, the PCU might increase or decrease the total flow. If selectivity starts to drop, it might adjust the ratio of liquid to steam, or alter the liquid's composition if a multi-component liquid is used.\n\n**Integration Patterns and Performance Characteristics:**\n\nThis system can be integrated into existing semiconductor fabrication lines as a specialized etch module. The single substrate processing paradigm ensures compatibility with advanced cluster tools. Key performance characteristics derived from this approach include:\n\n*   **Enhanced Etch Rate:** The elevated pressure steam water vapor can accelerate chemical reactions and improve mass transport of reactants and byproducts.\n*   **Superior Etch Selectivity:** The precisely formulated treatment liquid, combined with dynamic control, minimizes lateral etching and damage to underlying layers.\n*   **Reduced Critical Dimension (CD) Variation:** Real-time feedback and control lead to tighter process windows and more uniform etching results across the wafer.\n*   **Higher Aspect Ratio Etching:** The improved selectivity allows for the creation of deeper and narrower features, critical for 3D device architectures.\n*   **Lower Device Defectivity:** Minimized over-etching and improved process control reduce defects, leading to higher yields.\n\n**Code-Level Implications:**\n\nThe implementation of the control unit would involve sophisticated software for sensor data acquisition, signal processing, and real-time control algorithms. This would likely include PID (Proportional-Integral-Derivative) controllers, model predictive control (MPC) strategies, or even machine learning-based adaptive control loops to optimize the complex interplay between steam, liquid, and etching kinetics. Robust error handling, fault detection, and recipe management would also be crucial software components. The Etch System and Method for Single Substrate Processing patent provides a robust framework for developing such advanced control systems, pushing the boundaries of what's possible in semiconductor manufacturing.","business_analysis":"The **Etch System and Method for Single Substrate Processing** patent (US-9852920) presents a compelling business opportunity within the rapidly expanding semiconductor manufacturing sector. Its core value proposition—simultaneously increasing etch rate and etch selectivity in single substrate processing—directly addresses critical pain points faced by chipmakers globally, promising significant market disruption and value creation.\n\n**Market Opportunity Size:**\n\nThe global semiconductor manufacturing equipment market, valued in the tens of billions of dollars annually, is driven by continuous demand for more advanced and efficient fabrication tools. Etch equipment constitutes a substantial portion of this market. As device geometries shrink (e.g., 7nm, 5nm, 3nm nodes and beyond) and 3D architectures (FinFET, 3D NAND) become standard, the need for ultra-precise and high-throughput etching solutions intensifies. This patent targets the high-value, leading-edge segments of this market, where even marginal improvements in yield and efficiency translate into billions in revenue for chipmakers. The addressable market includes major foundries (TSMC, Samsung, Intel), IDMs, and memory manufacturers.\n\n**Competitive Advantages:**\n\nThis technology offers distinct competitive advantages:\n\n1.  **Superior Performance:** The ability to achieve high etch rates *and* high selectivity simultaneously fundamentally outperforms existing solutions that often require a trade-off. This leads to higher quality chips and faster production.\n2.  **Reduced Cost of Ownership (CoO):** Higher etch rates mean increased throughput per tool, reducing capital expenditure per wafer. Improved selectivity leads to higher device yields and reduced material waste, lowering operational expenses. This translates to a lower overall CoO for chipmakers.\n3.  **Enabling Advanced Nodes:** The precision and control offered by this system are critical for fabricating next-generation devices with increasingly complex and smaller features, where current etch technologies struggle with defectivity and uniformity.\n4.  **Process Window Expansion:** The dynamic control over the steam-liquid mixture can broaden the process window, making the etching process more robust and forgiving to variations.\n\n**Revenue Potential and Business Models:**\n\nRevenue potential for this innovation could be realized through several business models:\n\n*   **Equipment Sales:** Licensing the technology to existing semiconductor equipment manufacturers (e.g., Applied Materials, Lam Research, Tokyo Electron) or developing and selling proprietary etch tools based on this patent.\n*   **Process Licensing:** Offering process recipes and expertise to foundries and IDMs for their existing equipment, if compatible.\n*   **Consumables Sales:** Developing and supplying the specialized treatment liquids and potentially optimizing the steam generation components, creating a recurring revenue stream.\n*   **Joint Ventures/Partnerships:** Collaborating with leading chipmakers or equipment vendors to accelerate adoption and market penetration.\n\nGiven the high capital investment in semiconductor fabs, a solution that demonstrably improves yield and throughput would command a premium.\n\n**Strategic Positioning:**\n\nThis patent positions its owner as a leader in advanced etching technology, a critical and high-value segment of semiconductor manufacturing. It allows for strategic partnerships with key players in the industry, potentially influencing future roadmaps for process development. The focus on single substrate processing aligns with industry trends towards greater control and uniformity, enhancing its long-term relevance.\n\n**ROI Projections:**\n\nFor a typical advanced semiconductor fab, a 1-2% increase in yield can translate to hundreds of millions, if not billions, of dollars in annual revenue. A technology that significantly boosts both etch rate and selectivity could easily achieve such improvements. The ROI for adopting this Etch System and Method for Single Substrate Processing would be extremely attractive, driven by: (1) increased revenue from higher chip volumes and quality, (2) reduced operational costs from lower material waste and rework, and (3) a strategic advantage in developing next-generation products. Early adopters would gain a significant competitive edge, justifying substantial investment in this patented technology.","faqs":[{"answer":"The **Etch System and Method for Single Substrate Processing** (US-9852920) is a patented innovation in semiconductor manufacturing that introduces a novel approach to the etching process. Etching is a critical step where microscopic patterns are carved onto silicon wafers to create the circuits of microchips. This particular patent describes a system and method designed to significantly increase both the 'etch rate' (how fast material is removed) and 'etch selectivity' (how accurately unwanted material is removed without damaging underlying layers) simultaneously.\n\nAt its core, the invention involves placing an individual wafer (substrate) into an etch processing chamber. Instead of traditional etching agents, this system uses a precisely controlled, combined stream of a high-pressure steam water vapor mixture and a specialized treatment liquid. The dynamic control over the injection and flow of this mixture ensures optimal etching conditions, maintaining target performance metrics throughout the process.\n\nThis technology addresses a long-standing challenge in chip fabrication, where engineers often had to compromise between speed and precision. By overcoming this trade-off, this patent enables the production of higher quality chips, faster, and more cost-effectively, which is crucial for the ongoing advancement of electronics.\n\nKeywords: semiconductor etching, etch system, single substrate processing, patent US-9852920, microchip manufacturing, etch rate, etch selectivity.","question":"What is Etch System and Method for Single Substrate Processing?"},{"answer":"The **Etch System and Method for Single Substrate Processing** operates through a sophisticated, multi-component chemical delivery and control mechanism. First, a substrate (a silicon wafer with a masking layer and underlying silicon or silicon oxide) is loaded into a dedicated etch processing chamber, designed for single wafer handling to ensure uniformity.\n\nNext, two distinct components are prepared: a supply of steam water vapor at an elevated pressure, and a supply of a specialized treatment liquid. This treatment liquid is carefully formulated to selectively etch the masking layer, meaning it preferentially reacts with the mask while largely ignoring the sensitive silicon or silicon oxide layers beneath. The elevated pressure of the steam water vapor is key to enhancing reaction kinetics and mass transport within the chamber.\n\nThese two components—the steam water vapor and the treatment liquid—are then combined and precisely injected into the etch processing chamber. The critical innovation lies in the real-time, dynamic control of this combined flow. A sophisticated control system continuously monitors the etching process, using feedback from in-situ sensors. Based on this data, the system adjusts the flow rates and possibly the mixing ratio of the steam and liquid to maintain a predefined target etch rate and a target etch selectivity ratio. This adaptive control ensures optimal etching performance throughout the entire process, minimizing defects and maximizing efficiency.\n\nKeywords: etch system mechanism, single substrate processing method, steam water vapor etching, treatment liquid, dynamic flow control, semiconductor process, wafer etching.","question":"How does Etch System and Method for Single Substrate Processing work?"},{"answer":"The **Etch System and Method for Single Substrate Processing** patent addresses a fundamental and persistent problem in semiconductor manufacturing: the inherent trade-off between etch rate and etch selectivity. In traditional etching processes, chipmakers often face a dilemma: if they prioritize a high etch rate to achieve faster production throughput, they typically compromise on selectivity, leading to damage of the underlying silicon or silicon oxide layers, increased defects, and reduced device yields.\n\nConversely, if they prioritize high selectivity to ensure precise pattern transfer and protect sensitive layers, the etching process becomes significantly slower, creating bottlenecks in the fabrication line, increasing manufacturing time, and driving up costs. This compromise has become increasingly problematic as device geometries shrink to nanoscale dimensions (e.g., 5nm, 3nm) and complex 3D structures become standard, where even minor deviations can render a chip non-functional.\n\nThis innovation solves this dilemma by enabling the simultaneous optimization of both parameters. It allows for high-speed material removal while maintaining exceptional precision, thereby increasing throughput, improving device yields, reducing material waste, and ultimately lowering the cost of producing advanced microchips. This capability is crucial for the continued scaling and performance enhancement of electronic devices.\n\nKeywords: etching challenges, semiconductor problems, etch rate vs selectivity, microchip defects, wafer fabrication bottlenecks, precision etching, Etch System and Method for Single Substrate Processing benefits.","question":"What problem does Etch System and Method for Single Substrate Processing solve?"},{"answer":"The patent **Etch System and Method for Single Substrate Processing**, identified by US-9852920, lists its inventors as [Inventors' names, if provided in the prompt, otherwise state 'not specified in the provided data']. The assignee, which is the entity that owns the patent rights, is also not specified in the provided patent data. Typically, assignees are companies that invest in research and development, allowing their engineers and scientists to innovate and secure intellectual property.\n\nWhile the specific individuals and company are not detailed in the abstract provided, the invention reflects a significant collaborative effort in advanced materials science, chemical engineering, and process control. Such innovations often stem from dedicated R&D teams within leading semiconductor equipment manufacturers or large integrated device manufacturers (IDMs) who are at the forefront of developing next-generation fabrication technologies.\n\nThe development of this Etch System and Method for Single Substrate Processing underscores the continuous investment and intellectual capital required to push the boundaries of microchip manufacturing and maintain progress in the global technology landscape.\n\nKeywords: Etch System and Method for Single Substrate Processing inventors, patent assignee, US-9852920 invention, semiconductor R&D, intellectual property, microelectronics innovation.","question":"Who invented Etch System and Method for Single Substrate Processing?"},{"answer":"The **Etch System and Method for Single Substrate Processing** offers a multitude of key benefits that are set to significantly impact semiconductor manufacturing:\n\n1.  **Enhanced Throughput:** By enabling a higher etch rate without compromising quality, the system allows for faster processing of individual wafers, directly increasing the overall production volume in fabrication plants.\n2.  **Superior Device Yields:** The improved etch selectivity minimizes damage to critical underlying silicon or silicon oxide layers. This reduction in defects leads to a higher percentage of functional chips per wafer, boosting overall manufacturing yields and profitability.\n3.  **Reduced Material Waste and Cost:** Precision etching means less over-etching and less need for rework. This conserves valuable substrate materials and reduces the operational costs associated with fabrication, contributing to a lower cost of ownership for chipmakers.\n4.  **Enabling Advanced Device Geometries:** The high precision and control offered by this technology are crucial for fabricating devices with increasingly smaller features and more complex 3D architectures, such as FinFETs and 3D NAND, which are essential for next-generation microprocessors and memory.\n5.  **Improved Process Uniformity and Robustness:** The single substrate processing approach, combined with dynamic feedback control, ensures consistent etching results across the entire wafer and from wafer to wafer. This makes the process more robust and reliable against variations.\n\nOverall, this patent provides a strategic advantage for manufacturers, allowing them to produce higher quality, more advanced chips, faster and more economically, thereby driving innovation across the entire electronics industry.\n\nKeywords: Etch System and Method for Single Substrate Processing benefits, semiconductor manufacturing advantages, higher device yield, reduced cost, advanced chip geometries, process uniformity, wafer throughput.","question":"What are the key benefits of Etch System and Method for Single Substrate Processing?"},{"answer":"The **Etch System and Method for Single Substrate Processing** distinguishes itself significantly from prior art etching technologies primarily by overcoming the long-standing compromise between etch rate and etch selectivity. Traditional methods, such as wet etching, often offer high selectivity but lack the precision for fine features (being isotropic). Dry (plasma) etching, while providing anisotropic etching for fine features, typically forces a trade-off: high etch rates often lead to lower selectivity and potential damage, while high selectivity processes are inherently slower.\n\nThis patent introduces several key differentiators:\n\n1.  **Hybrid Etchant Delivery:** Unlike prior art's reliance on single-phase (liquid or gas/plasma) etchants, this innovation combines a high-pressure steam water vapor mixture with a specialized treatment liquid. This hybrid approach allows for a synergistic effect, leveraging the benefits of both phases to achieve superior performance not possible with either alone.\n2.  **Dynamic Feedback Control:** A crucial advancement is the real-time, adaptive control system. Prior art often uses static process recipes or simpler endpoint detection. The Etch System and Method for Single Substrate Processing continuously monitors etching parameters and dynamically adjusts the etchant mixture's flow and composition to maintain target etch rates and selectivities, making it far more responsive and precise.\n3.  **Simultaneous Optimization:** The core difference is the ability to *simultaneously* increase both etch rate and selectivity. Prior art typically improves one at the expense of the other. This innovation fundamentally breaks that trade-off.\n4.  **Optimized Single Substrate Processing:** While single wafer processing exists, this system is specifically designed and optimized to leverage the unique properties of the steam-liquid mixture for individual wafers, ensuring exceptional uniformity and control.\n\nThese distinctions make the Etch System and Method for Single Substrate Processing a breakthrough, offering a more efficient, precise, and versatile etching solution compared to its predecessors.\n\nKeywords: Etch System and Method for Single Substrate Processing vs prior art, etching comparison, hybrid etching, dynamic control, etch rate selectivity difference, semiconductor innovation, plasma etching limitations.","question":"How is Etch System and Method for Single Substrate Processing different from prior art?"},{"answer":"The **Etch System and Method for Single Substrate Processing** patent (US-9852920) is poised to have a transformative impact primarily on the **semiconductor manufacturing industry**. This is its direct application, as it improves a fundamental process in creating microchips. However, its influence extends far beyond the fabs themselves, affecting a wide array of industries that rely on advanced electronics.\n\nKey impacted industries include:\n\n*   **Consumer Electronics:** Faster, more efficient chip production means more powerful and affordable smartphones, laptops, wearables, and smart home devices. This accelerates product cycles and enhances user experience.\n*   **Automotive:** The rise of electric vehicles and autonomous driving necessitates highly reliable and powerful onboard computing. Improved chip fabrication through this technology directly supports advancements in ADAS (Advanced Driver-Assistance Systems) and infotainment systems.\n*   **Artificial Intelligence (AI) & High-Performance Computing (HPC):** AI training and inference, as well as complex scientific simulations, demand cutting-edge processors and memory. This patent facilitates the production of such high-performance chips, crucial for AI and HPC development.\n*   **Telecommunications:** The infrastructure for 5G and future networks requires advanced chips for base stations, data centers, and end-user devices. Enhanced etching contributes to the deployment of faster, more efficient communication technologies.\n*   **Medical Devices:** Miniaturized, high-performance chips are vital for advanced medical imaging, diagnostics, and implantable devices. Precision etching ensures the reliability and functionality of these critical components.\n*   **Aerospace & Defense:** High-reliability, high-performance microchips are essential for avionics, satellite systems, and defense applications. This technology contributes to the robustness and capabilities of these systems.\n\nIn essence, any industry that leverages computing power, data processing, or advanced sensing will indirectly benefit from the improved efficiency and quality of microchip manufacturing enabled by the Etch System and Method for Single Substrate Processing.\n\nKeywords: Etch System and Method for Single Substrate Processing impact, semiconductor industry, consumer electronics, automotive tech, AI computing, telecommunications, medical devices, aerospace defense.","question":"What industries will Etch System and Method for Single Substrate Processing impact?"},{"answer":"The patent for **Etch System and Method for Single Substrate Processing**, identified by the number US-9852920, has a distinct timeline for its filing and publication.\n\nThe **Filing Date** for this patent was **2016-02-09**. This is the date when the patent application was officially submitted to the patent office, marking the beginning of the patent examination process. The filing date is crucial as it typically establishes the priority date for the invention, meaning it's the date from which the invention's novelty and non-obviousness are assessed against prior art.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent was officially published by the patent office, making its details publicly accessible. The publication date often coincides with the granting of the patent, signifying that the patent office has examined the application and determined that the invention meets the criteria for patentability.\n\nTherefore, the innovation described in the Etch System and Method for Single Substrate Processing patent was formally introduced to the public in late 2017, after a period of examination that commenced in early 2016. This timeline reflects the typical process for securing intellectual property rights for complex technological advancements in the semiconductor sector.\n\nKeywords: Etch System and Method for Single Substrate Processing filing date, patent publication date, US-9852920 timeline, patent grant, intellectual property timeline, semiconductor patent process.","question":"When was Etch System and Method for Single Substrate Processing filed/granted?"},{"answer":"The **Etch System and Method for Single Substrate Processing** (US-9852920) has significant commercial applications primarily within the semiconductor manufacturing ecosystem, offering direct and indirect benefits across the value chain.\n\nDirect commercial applications include:\n\n1.  **Advanced Etch Equipment:** The core technology can be integrated into or form the basis of next-generation etch tools sold to semiconductor foundries and integrated device manufacturers (IDMs). Equipment manufacturers can license this patent to enhance their product offerings, gaining a competitive edge.\n2.  **Process Licensing:** Companies owning or licensing this technology can offer process recipes and optimization services to chipmakers, helping them improve their existing fabrication lines or develop new processes for advanced nodes.\n3.  **Specialized Consumables:** The patent relies on a 'specialized treatment liquid.' The development and supply of this liquid, along with potentially optimized steam generation components, represent a recurring revenue stream for chemical and materials suppliers.\n\nIndirect commercial applications stem from the improvements it brings to chip manufacturing:\n\n1.  **Higher Volume & Lower Cost Chips:** By increasing yields and etch rates, the technology enables more cost-effective production of high-performance microchips. This benefits all companies involved in chip design, assembly, and packaging, as well as end-product manufacturers.\n2.  **Enabling Future Product Development:** The precision offered by this etching system is crucial for developing and commercializing chips for emerging technologies like AI, IoT, advanced mobile computing, and autonomous vehicles. Companies in these sectors benefit from the availability of more capable and reliable hardware.\n3.  **Competitive Advantage for Fabs:** Semiconductor fabrication plants adopting this innovation gain a significant competitive advantage through superior chip quality, faster production cycles, and reduced operational costs. This can attract more customers and higher-value contracts.\n\nIn essence, the Etch System and Method for Single Substrate Processing is a foundational technology that underpins the commercial viability and advancement of a vast array of electronic products and services globally.\n\nKeywords: Etch System and Method for Single Substrate Processing commercial applications, semiconductor equipment, process licensing, specialized chemicals, microchip production, advanced electronics, fabrication plant advantages, US-9852920 commercial.","question":"What are the commercial applications of Etch System and Method for Single Substrate Processing?"},{"answer":"The **Etch System and Method for Single Substrate Processing** patent (US-9852920) lays a robust foundation for exciting future developments in semiconductor etching, pushing the boundaries of what's possible in microchip fabrication.\n\nExpected future developments include:\n\n1.  **Advanced Hybrid Chemistries:** Further research will likely explore novel combinations of steam water vapor and treatment liquids, potentially incorporating new chemical species or different vapor compositions to achieve even higher selectivity, etch rates, or to target new materials beyond silicon and silicon oxide. This could involve multi-component liquid etchants or additional reactive gases in the steam mixture.\n2.  **Enhanced AI/Machine Learning Integration:** The dynamic control aspect of this patent is ripe for advanced AI and machine learning integration. Future systems could use predictive models to anticipate process drifts, optimize etching parameters in real-time for unprecedented precision, and even self-learn optimal recipes for new materials or device architectures, reducing development time.\n3.  **Atomic Layer Etching (ALE) Synergy:** The precise control over material removal offered by this technology could be integrated with or further refined to achieve true atomic layer etching, where material is removed one atomic layer at a time. This would open doors for ultra-precise fabrication of quantum devices and other next-generation technologies.\n4.  **Application to Novel Materials:** As the semiconductor industry explores materials beyond silicon (e.g., 2D materials like graphene, transition metal dichalcogenides, or complex oxides), the flexible nature of this hybrid etching approach could be adapted to precisely pattern these emerging materials, which often have unique etching challenges.\n5.  **Integration with In-Situ Metrology:** Expect tighter integration with advanced in-situ metrology tools (e.g., advanced optical sensors, electron microscopy techniques) to provide even more granular, real-time feedback for the control system, enabling hyper-precise adjustments and greater process understanding.\n\nThese developments will continue to drive the miniaturization, performance, and energy efficiency of microchips, enabling a new generation of electronic devices and computing paradigms.\n\nKeywords: Etch System and Method for Single Substrate Processing future, semiconductor development, AI in etching, atomic layer etching, novel materials etching, in-situ metrology, microelectronics future, US-9852920 developments.","question":"What are the future developments expected for Etch System and Method for Single Substrate Processing?"}],"topics":["Etch System and Method for Single Substrate Processing","US-9852920","semiconductor etching","single substrate processing","etch rate","semiconductor","industry","relentless"],"tech_cluster":null},"seo":{"title":"Etch System & Method for Single Substrate Processing - US-9852920","description":"Discover the Etch System and Method for Single Substrate Processing (US-9852920), a patent revolutionizing semiconductor etching with superior etch rate and selectivity.","keywords":["Etch System and Method for Single Substrate Processing","US-9852920","semiconductor etching","single substrate processing","etch rate","etch selectivity","wafer fabrication","microchip manufacturing","patent innovation","H01L","plasma etching","precision etching","silicon processing","advanced manufacturing"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852920","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852920","citation_suggestion":"Patentable. \"Etch system and method for single substrate processing\" (US-9852920). https://patentable.app/patents/US-9852920","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852920","json":"https://patentable.app/api/llm-context/US-9852920","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:58:43.437Z"}