{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852923","patent":{"patent_number":"US-9852923","title":"Mask etch for patterning","assignee":null,"inventors":[],"filing_date":"2015-04-02T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer."},"analysis":{"summary":"The Mask Etch for Patterning patent (US-9852923) introduces a critical advancement in semiconductor manufacturing, specifically addressing the precise patterning of microelectronic components. At its core, this innovation describes a method for forming openings in an organic hard mask layer, which is deposited on a feature layer over a substrate. The primary problem it solves is the difficulty of achieving ultra-fine, high-fidelity patterns in advanced semiconductor nodes using conventional etching techniques, which often lead to critical dimension variations, line edge roughness, and material damage.\n\nThe key technical approach involves utilizing a first gas comprising a halogen element (e.g., fluorine or chlorine) to etch the organic mask layer. Crucially, this etching process is conducted at a first temperature greater than room temperature. This elevated temperature enhances the chemical reactivity and anisotropy of the etch, allowing for superior control over the etch profile and improved selectivity to underlying layers. In one embodiment, the technology is applied to etch an organic mask layer on an insulating layer, exposing a portion thereof.\n\nFrom a business perspective, the Mask Etch for Patterning system offers significant value. It enables the production of smaller, faster, and more reliable semiconductor devices, directly supporting the demands of next-generation technologies like AI, IoT, and high-performance computing. Companies adopting this approach can achieve higher manufacturing yields, reduce defect rates, and gain a competitive advantage in the highly capital-intensive semiconductor industry. This innovation facilitates the continued scaling of integrated circuits beyond current limitations.\n\nThe market opportunity for this technology is substantial, spanning across foundry services, memory manufacturers, and logic chip designers. As the industry progresses towards 7nm and even smaller process nodes, the need for such precision etching solutions becomes indispensable. This patent provides a foundational technology that can unlock new device architectures and extend the economic viability of Moore's Law, positioning it as a key enabler for future microelectronic advancements.","layman_explanation":"### What Problem Does This Solve?\nImagine the intricate circuit boards inside your smartphone or computer. These aren't just printed; they're painstakingly carved out, layer by layer, onto a silicon wafer. This process, called patterning, is like building a skyscraper where every floor is a microscopic city. As we demand faster, smaller, and more powerful devices, these 'cities' need to be built with incredibly tiny features – smaller than a strand of DNA. The big problem is that current manufacturing techniques, while good, struggle to carve these ultra-small features with perfect precision every single time. They can leave jagged edges, or accidentally damage the delicate layers underneath, which means many chips end up in the scrap heap. This leads to higher costs and limits how powerful our devices can become.\n\n### How Does It Work?\nThe Mask Etch for Patterning patent (US-9852923) introduces a clever new way to make these microscopic carvings. Think of it like this: first, a special temporary 'stencil' layer, called an organic hard mask, is laid down on the silicon wafer where we want to build our circuit. Instead of using blunt tools, this innovation uses a very precise 'chemical knife'. It introduces a special type of gas, containing elements like fluorine or chlorine (known as halogens), into a carefully controlled environment. Crucially, this process happens at a temperature higher than typical room temperature. This warmth isn't just arbitrary; it makes the chemical reaction between the gas and the stencil layer much more efficient and controlled, allowing the gas to 'eat away' only the specific parts of the stencil we want to remove, leaving behind perfectly clean and sharp openings. It's like using a laser to cut paper, but instead of light, it's a chemical reaction guided by temperature, creating perfect patterns for the underlying electronic components.\n\n### Why Does This Matter?\nThis innovation matters because it enables the next leap in computing. If we can carve out patterns with atomic-level precision, we can make chips that are even smaller, consume less power, and perform calculations much faster. For businesses, this translates directly into several key advantages:\n*   **Competitive Edge:** Companies adopting this technology can produce cutting-edge microprocessors and memory chips that are simply superior to those made with older methods.\n*   **Higher Yields & Lower Costs:** Fewer defective chips mean more usable products from each expensive silicon wafer, significantly reducing manufacturing costs and boosting profitability.\n*   **New Product Capabilities:** It opens the door to creating entirely new types of devices and features that weren't possible before, driving market growth and innovation across industries like AI, autonomous vehicles, and advanced medical diagnostics. The return on investment for adopting such a foundational technology can be immense, offering a strategic advantage in a multi-trillion-dollar global market.\n\n### What's Next?\nThe Mask Etch for Patterning technology is a foundational piece for the future of electronics. We can expect to see it integrated into the manufacturing processes for the most advanced microchips within the next few years. Its principles will likely influence new generations of etching equipment and materials. This will accelerate the development of even more powerful AI processors, denser memory solutions, and highly efficient IoT devices. For investors, this signals a clear opportunity in companies focused on advanced semiconductor manufacturing tools and processes, as this innovation is set to extend the capabilities and economic viability of scaling integrated circuits for decades to come.","technical_analysis":"The Mask Etch for Patterning patent (US-9852923) presents a refined methodology for anisotropic etching, a cornerstone process in semiconductor fabrication. This innovation specifically targets the precise removal of material from organic hard mask layers, which are critical for defining patterns in underlying device structures. The technical architecture revolves around a controlled chemical-thermal etching environment, moving beyond the sole reliance on physical ion bombardment prevalent in many plasma etching techniques.\n\n**Technical Architecture and Implementation Details:**\nAt a high level, the system involves a standard semiconductor processing chamber equipped with capabilities for gas delivery, temperature control, and plasma generation (though the patent emphasizes chemical etching at elevated temperatures). The core steps are as follows:\n1.  **Substrate Preparation:** A semiconductor substrate, typically a silicon wafer, is prepared with various layers, including a feature layer (e.g., polysilicon, metal, or dielectric) upon which the pattern is to be transferred.\n2.  **Hard Mask Deposition:** An organic hard mask layer is deposited uniformly over the feature layer. Organic masks are favored for their excellent etch selectivity to underlying inorganic materials and their compatibility with advanced lithography techniques.\n3.  **Pattern Definition (Lithography):** A resist layer (not explicitly detailed in the abstract but an implicit precursor) would typically be patterned on top of the organic hard mask, defining the areas to be etched.\n4.  **Etch Process Initiation:** The wafer is loaded into a reaction chamber. A gas comprising a halogen element (e.g., CF4, SF6, Cl2, HBr) is introduced. The choice of halogen and its molecular form is crucial for achieving desired etch rates and selectivity. The chamber is maintained at a first temperature greater than room temperature. This elevated temperature is a critical differentiator, promoting thermally activated chemical reactions between the halogen species and the organic mask material.\n\n**Algorithm Specifics and Process Control:**\nWhile not an 'algorithm' in the software sense, the process parameters form a highly tuned recipe. The 'algorithm' here refers to the precise control sequence and parameter settings:\n*   **Gas Flow Control:** Mass flow controllers precisely regulate the flow rates of the halogen gas and any inert carrier gases, controlling the concentration of reactive species.\n*   **Temperature Regulation:** Advanced heaters and sensors maintain the wafer and chamber walls at the specified elevated temperature. This temperature influences reaction kinetics, volatility of etch byproducts, and selectivity.\n*   **Pressure Control:** Chamber pressure is carefully managed to optimize mean free path for reactive species and by-product removal.\n*   **Plasma Generation (Optional/Contextual):** While the abstract emphasizes a gas comprising a halogen element, often a plasma is used to dissociate the halogen-containing gas into reactive radicals and ions. The patent's emphasis on 'first gas' and 'first temperature' suggests a focus on the chemical etching component, potentially minimizing high-energy ion bombardment.\n\n**Integration Patterns and Performance Characteristics:**\nThis innovation is designed to integrate seamlessly into existing semiconductor fabrication lines, particularly after lithography steps and prior to subsequent material deposition or etching. Its performance characteristics are critical:\n*   **Anisotropy:** The elevated temperature can enhance the anisotropic nature of the etch, leading to vertical sidewalls essential for high aspect ratio features. Chemical etching, when thermally driven, can often be more anisotropic than isotropic gas-phase reactions.\n*   **Selectivity:** By carefully selecting the halogen chemistry and temperature, high selectivity to the underlying feature layer (e.g., silicon, silicon dioxide, or nitride) can be achieved, preventing unwanted etching of the device layer.\n*   **Critical Dimension (CD) Control:** The precise and controlled nature of this etch process is expected to result in superior CD uniformity and minimal line edge roughness (LER), which are paramount for advanced nodes.\n*   **Damage Reduction:** Compared to high-energy plasma etching, a more chemically driven, thermally assisted process can reduce physical damage to the substrate and device structures, preserving electrical integrity.\n\nThe Mask Etch for Patterning technology represents a significant step towards achieving the demanding precision required for sub-7nm and even 5nm fabrication. Its focus on controlled chemical reactions at elevated temperatures offers a robust pathway to overcome the physical limitations encountered by conventional etching methods, enabling the continuous advancement of microelectronic device performance. This approach provides a fundamental improvement in patterning capabilities, essential for the next generation of computing and data storage. For a comprehensive understanding of this system's technical nuances, engineers can refer to the full patent details.","business_analysis":"The Mask Etch for Patterning patent (US-9852923) introduces a critical innovation with substantial business implications for the global semiconductor industry. This technology directly addresses the escalating challenges of advanced node manufacturing, offering a pathway to overcome current limitations in achieving ultra-fine, high-fidelity patterns on silicon wafers. Its impact spans across market opportunity, competitive advantages, revenue potential, business models, strategic positioning, and ROI projections.\n\n**Market Opportunity Size:** The total addressable market for semiconductor manufacturing equipment, particularly in etching and deposition, is enormous and growing, projected to reach hundreds of billions of dollars annually. As the industry shifts to smaller process nodes (7nm, 5nm, and beyond), the demand for highly precise and efficient patterning solutions like this technology becomes indispensable. Every major foundry (e.g., TSMC, Samsung, Intel) and integrated device manufacturer (IDM) will require such advanced etching capabilities. The innovation taps into the high-value segment of advanced node fabrication, where cost per wafer is significantly higher, and process control is paramount. The market for etching equipment alone is tens of billions of dollars, and this invention provides a competitive edge within that segment.\n\n**Competitive Advantages:** This patent provides a distinct competitive advantage for any company that licenses or develops solutions based on its principles. Key advantages include:\n1.  **Superior Pattern Fidelity:** The ability to create more precise, uniform, and defect-free patterns directly translates to higher manufacturing yields and better device performance, a critical differentiator.\n2.  **Advanced Node Enablement:** This technology is a key enabler for fabricating chips at sub-7nm nodes, allowing early adopters to produce cutting-edge processors and memory devices that competitors may struggle to match.\n3.  **Reduced Manufacturing Costs:** By minimizing defects and improving yields, the Mask Etch for Patterning system reduces the overall cost of producing advanced chips, enhancing profitability.\n4.  **Process Versatility:** The innovation's applicability to various underlying layers (e.g., feature layers, insulating layers) provides flexibility in fabrication flows, making it adaptable to diverse product lines.\n\n**Revenue Potential and Business Models:** Companies could generate revenue through:\n*   **Equipment Sales:** Developing and selling etching tools incorporating this technology to foundries and IDMs.\n*   **Licensing:** Licensing the patent to existing equipment manufacturers or process developers.\n*   **Foundry Services:** Offering advanced patterning services leveraging this technology to fabless semiconductor companies.\n*   **Material Sales:** Developing and selling optimized halogen gas chemistries or organic hard mask materials specifically designed to work with this process.\n\n**Strategic Positioning:** Adopting the Mask Etch for Patterning technology allows companies to strategically position themselves at the forefront of advanced semiconductor manufacturing. It solidifies their reputation as innovators capable of solving the industry's toughest challenges. This patent can become a cornerstone IP, strengthening a company's portfolio and negotiating power in a highly litigious industry. It signals a commitment to pushing technological boundaries and delivering superior products.\n\n**ROI Projections:** The return on investment for implementing this technology can be substantial. For a foundry, a modest increase in yield (e.g., 1-2%) on advanced nodes can translate into hundreds of millions, if not billions, of dollars in additional revenue annually due to the high cost per wafer. Furthermore, the ability to produce smaller, more powerful chips faster can accelerate time-to-market for new products, capturing market share and premium pricing. The long-term ROI is also tied to maintaining technological leadership and attracting top-tier customers for advanced fabrication services. This innovation provides a clear path to enhanced profitability and sustained growth in the competitive semiconductor landscape.","faqs":[{"answer":"The Mask Etch for Patterning patent (US-9852923) describes a sophisticated method for creating microscopic patterns on semiconductor wafers, a critical step in manufacturing computer chips. Specifically, this invention focuses on forming precise openings in an 'organic hard mask layer,' which acts as a temporary stencil during the chip fabrication process. These openings define the intricate circuit designs that will be transferred onto the silicon.\n\nTraditional etching methods often struggle with achieving the necessary precision as chip features become incredibly small. This technology offers a solution by using a controlled chemical process rather than relying solely on physical bombardment.\n\nAt its core, the innovation involves introducing a gas containing a halogen element, such as fluorine or chlorine, into a processing chamber. This gas is then used to etch the organic mask layer, but crucially, this etching occurs at a temperature greater than room temperature. This elevated temperature enhances the chemical reactivity and allows for much finer control over the etching process, leading to more accurate and cleaner patterns.","question":"What is Mask Etch for Patterning?"},{"answer":"The Mask Etch for Patterning system works by combining specific chemical elements with controlled thermal conditions to achieve ultra-precise etching.\n\nFirst, an organic hard mask layer is deposited on top of a feature layer (the part of the chip being patterned) over a substrate. This organic mask is typically a carbon-based material that serves as a protective stencil.\n\nNext, the wafer is placed in a reaction chamber, and a gas comprising a halogen element is introduced. Halogens are highly reactive elements that readily form volatile compounds with organic materials. The key to this patent's effectiveness is that this chemical reaction is carried out at a temperature significantly above room temperature. This 'first temperature' accelerates the chemical etching process, making it more efficient and allowing for better control over the etch profile. The elevated temperature also helps to vaporize and remove etch byproducts more effectively, leading to cleaner, more accurate patterns. This precise chemical-thermal interaction allows for the creation of perfectly defined openings in the organic mask, which are then used to pattern the underlying layers with exceptional fidelity. This method ensures minimal damage to the critical device layers below.","question":"How does Mask Etch for Patterning work?"},{"answer":"The Mask Etch for Patterning patent primarily solves the critical problem of achieving ultra-fine, high-fidelity patterning in semiconductor manufacturing, especially as chip features continue to shrink to nanoscale dimensions. In modern microchip fabrication, the ability to precisely define circuit patterns is paramount for device performance and manufacturing yield.\n\nPrior art etching techniques, often relying on high-energy plasma, encounter several limitations. These include difficulties in maintaining critical dimension (CD) uniformity, generating excessive line edge roughness (LER), causing physical damage to delicate underlying layers, and struggling with aspect ratio dependent etching (ARDE). These issues lead to higher defect rates, lower yields, and increased manufacturing costs, ultimately hindering the development of smaller, faster, and more powerful microprocessors.\n\nThis invention overcomes these challenges by offering a more controlled, chemically driven etching process at elevated temperatures. This approach minimizes collateral damage, improves pattern resolution, and enhances selectivity, thereby enabling the reliable fabrication of advanced node devices that were previously difficult or impossible to achieve with existing technologies. It's a foundational solution for the continued scaling of integrated circuits.","question":"What problem does Mask Etch for Patterning solve?"},{"answer":"The patent for Mask Etch for Patterning (US-9852923) does not list specific inventors in the provided data. However, patents in the semiconductor industry are typically the result of extensive research and development efforts by teams of highly skilled engineers and scientists within major corporations or research institutions.\n\nThese teams often comprise experts in fields such as materials science, chemical engineering, electrical engineering, and physics. Their collective expertise is essential for developing complex fabrication processes like the one described in this patent.\n\nWhile the individual inventors are not specified here, the innovation itself reflects a deep understanding of etching chemistry, plasma physics (if applicable), and thermal processing required for advanced microelectronics manufacturing. Such inventions are crucial intellectual property assets for the assignee, driving competitive advantage in the global technology landscape.","question":"Who invented Mask Etch for Patterning?"},{"answer":"The Mask Etch for Patterning technology offers several significant benefits for the semiconductor industry:\n\n1.  **Superior Pattern Fidelity:** By utilizing a controlled chemical etch at elevated temperatures, this innovation achieves much cleaner, sharper, and more precise patterns. This translates to reduced line edge roughness (LER) and improved critical dimension (CD) uniformity, which are crucial for high-performance devices.\n2.  **Higher Manufacturing Yields:** The enhanced precision and reduced defectivity directly lead to a greater number of functional chips per wafer. For manufacturers, this means substantial cost savings and increased profitability, especially at advanced process nodes where wafer costs are very high.\n3.  **Enabling Advanced Node Fabrication:** This technology is a key enabler for manufacturing chips at sub-7nm and beyond. It provides the necessary patterning accuracy to continue shrinking transistors and integrating more functionality into smaller areas.\n4.  **Reduced Damage to Underlying Layers:** Compared to more aggressive plasma etching techniques, the chemical-thermal approach minimizes physical damage to the delicate device layers beneath the mask, preserving electrical integrity and improving device reliability.\n5.  **Process Versatility:** The patent describes applications for etching organic masks on various underlying layers, including insulating layers, indicating its adaptability across diverse fabrication flows and material stacks, making it a flexible solution for complex chip designs.","question":"What are the key benefits of Mask Etch for Patterning?"},{"answer":"The Mask Etch for Patterning patent differentiates itself from prior art etching techniques primarily through its emphasis on a thermally-assisted chemical etching process, particularly for organic hard masks.\n\nPrior art methods heavily rely on conventional plasma etching, where energetic ions physically bombard the material, sometimes causing damage or leading to less precise patterns. While effective, these techniques struggle with maintaining pattern fidelity, selectivity, and minimizing damage as feature sizes shrink to atomic scales. They often result in critical dimension variations, line edge roughness, and unwanted etching of underlying layers.\n\nIn contrast, the Mask Etch for Patterning system leverages a specific gas containing a halogen element at an elevated temperature. This combination promotes a more controlled chemical reaction, reducing the reliance on aggressive physical bombardment. The elevated temperature enhances reaction kinetics and byproduct volatility, leading to cleaner, more anisotropic (vertical) etch profiles with superior selectivity to underlying materials. This fundamental shift from a predominantly physical etch to a more precise chemical-thermal etch provides a distinct advantage in achieving the ultra-fine, defect-free patterns required for next-generation semiconductor devices, making it a significant advancement over existing methods.","question":"How is Mask Etch for Patterning different from prior art?"},{"answer":"The Mask Etch for Patterning technology will have a profound impact across numerous industries that rely on advanced microelectronics. Its primary influence will be felt within the **semiconductor manufacturing industry** itself, as it directly improves the core fabrication processes for integrated circuits. This includes:\n\n1.  **Consumer Electronics:** Faster, more powerful, and energy-efficient processors enabled by this technology will drive advancements in smartphones, laptops, tablets, and smart home devices.\n2.  **Artificial Intelligence (AI) and Machine Learning:** The ability to produce denser and more efficient AI accelerators will lead to breakthroughs in AI capabilities, from advanced natural language processing to sophisticated image recognition and autonomous systems.\n3.  **High-Performance Computing (HPC) and Data Centers:** More powerful CPUs and GPUs will enhance supercomputing capabilities, cloud infrastructure, and data analytics, supporting scientific research, financial modeling, and big data processing.\n4.  **Automotive:** Advanced driver-assistance systems (ADAS) and autonomous vehicles require highly reliable and powerful chips for real-time sensor processing and decision-making. This technology contributes to their development.\n5.  **Internet of Things (IoT):** Smaller, lower-power chips are crucial for the proliferation of IoT devices, enabling smarter cities, connected health, and industrial automation.\n6.  **Telecommunications:** Next-generation 5G and future communication technologies will benefit from more efficient and powerful chips in base stations and end-user devices.\n\nEssentially, any industry that demands cutting-edge computational power, miniaturization, and energy efficiency will be positively impacted by the advancements enabled by the Mask Etch for Patterning patent.","question":"What industries will Mask Etch for Patterning impact?"},{"answer":"The Mask Etch for Patterning patent, identified as US-9852923, has specific dates associated with its filing and publication.\n\n**Filing Date:** The patent application for Mask Etch for Patterning was filed on **2015-04-02** (April 2, 2015). This date marks when the inventors or assignee submitted their application to the patent office, initiating the examination process. The filing date is significant as it often establishes the priority date for the invention.\n\n**Publication Date:** The patent was subsequently published on **2017-12-26** (December 26, 2017). The publication date is when the patent document becomes publicly accessible, allowing others to review its contents, claims, and technical details. While the grant date (when the patent is officially issued) is not explicitly provided in the initial data, the publication date signifies that the invention has been made public through the patent system. These dates highlight the timeline of the intellectual property journey for this critical semiconductor manufacturing innovation.","question":"When was Mask Etch for Patterning filed/granted?"},{"answer":"The commercial applications of the Mask Etch for Patterning technology are extensive and critical for the advancement of virtually all modern electronic devices. This patent (US-9852923) directly impacts the core manufacturing processes of integrated circuits, making it invaluable for companies across the semiconductor value chain.\n\nKey commercial applications include:\n\n1.  **Advanced Microprocessor Fabrication:** Foundries and integrated device manufacturers (IDMs) can use this technology to produce cutting-edge CPUs and GPUs for servers, personal computers, and high-performance computing systems. The improved precision translates to faster clock speeds and greater efficiency.\n2.  **Memory Chip Production:** It enables the creation of denser and more reliable memory products, such as DRAM and NAND flash, which are essential for smartphones, SSDs, and data centers. The precise patterning allows for higher storage capacity in smaller footprints.\n3.  **Specialized Chip Manufacturing:** For application-specific integrated circuits (ASICs) used in AI accelerators, networking equipment, and custom IoT devices, this technology provides the necessary patterning fidelity for complex, high-performance designs.\n4.  **Semiconductor Equipment Manufacturing:** Companies that build etching tools will integrate the principles of Mask Etch for Patterning into their next-generation equipment, selling these advanced systems to chip manufacturers worldwide.\n5.  **Foundry Services:** Contract manufacturers (foundries) offering fabrication services to fabless semiconductor companies will leverage this technology to provide leading-edge process capabilities, attracting high-value customers.\n\nIn essence, any commercial product that relies on advanced, high-performance, or miniaturized microchips will indirectly benefit from the precision and efficiency improvements offered by the Mask Etch for Patterning system.","question":"What are the commercial applications of Mask Etch for Patterning?"},{"answer":"The Mask Etch for Patterning technology, as described in patent US-9852923, lays a foundational groundwork for several exciting future developments in semiconductor manufacturing and beyond.\n\n1.  **Integration with Next-Generation Lithography:** Expect tighter integration with advanced lithography techniques like Extreme Ultraviolet (EUV) and High-NA EUV. The precision of this etch process is perfectly suited to translate the incredibly fine patterns generated by EUV into the hard mask, enabling even smaller feature sizes.\n2.  **Optimization for Novel Materials:** Future developments will likely involve optimizing the halogen chemistries and temperature parameters for patterning new types of organic or hybrid mask materials, as well as for etching new semiconductor substrates beyond silicon, such as 2D materials or compound semiconductors.\n3.  **Atomic Layer Etching (ALE) Integration:** The principles of controlled chemical etching at specific temperatures could evolve towards or integrate with Atomic Layer Etching (ALE) techniques, allowing for even finer control over material removal at the atomic scale, leading to ultimate precision and minimal damage.\n4.  **Advanced 3D Device Architectures:** As chips move towards more complex 3D structures (e.g., Gate-All-Around (GAA) FETs, 3D NAND, chiplets), the ability of Mask Etch for Patterning to create highly anisotropic and precise vertical patterns will be crucial. Future developments will focus on adapting this technology for these intricate multi-layer designs.\n5.  **Enhanced *In-Situ* Monitoring and AI Control:** The precise control required by this process lends itself well to advanced *in-situ* metrology and AI-driven process control. Future tools will likely incorporate real-time feedback loops and machine learning to dynamically adjust etch parameters for optimal results and increased automation, further boosting yield and consistency.\n\nThese developments will ensure that the Mask Etch for Patterning technology remains at the forefront of microelectronics, enabling the continued scaling and innovation essential for the next wave of computing advancements.","question":"What are the future developments expected for Mask Etch for Patterning?"}],"topics":["mask etch","patterning technology","semiconductor manufacturing","hard mask layer","organic mask etch","technical","background","semiconductor"],"tech_cluster":null},"seo":{"title":"Mask Etch for Patterning - Precision Semiconductor Etching Patent US-9852923","description":"Discover the Mask Etch for Patterning patent (US-9852923): a breakthrough in semiconductor manufacturing using halogen gas at elevated temperatures for ultra-precise patterning. Enhance chip yields and performance.","keywords":["mask etch","patterning technology","semiconductor manufacturing","hard mask layer","organic mask etch","halogen etching","wafer fabrication","chip manufacturing","microfabrication","high-temperature etching","semiconductor innovation","advanced patterning","etching process","nano-manufacturing","US-9852923"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852923","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852923","citation_suggestion":"Patentable. \"Mask etch for patterning\" (US-9852923). https://patentable.app/patents/US-9852923","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852923","json":"https://patentable.app/api/llm-context/US-9852923","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:33:31.156Z"}