{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852926","patent":{"patent_number":"US-9852926","title":"Manufacturing method for semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-10-17T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":32,"abstract":"A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor."},"analysis":{"summary":"This patent, titled \"Manufacturing Method for Semiconductor Device\" (US-9852926), introduces a groundbreaking approach to fabricating semiconductor devices that feature an oxide conductor with both exceptionally high conductivity and high optical transmittance. The core innovation addresses a long-standing challenge in electronics: achieving these two critical properties simultaneously without compromise.\n\nThe problem this invention solves is the inherent trade-off in existing transparent conductive materials, which typically excel in either conductivity or transparency but rarely both. This limitation restricts the performance and design possibilities of modern electronic devices, particularly in applications like advanced displays, touchscreens, and solar cells.\n\nTechnically, the method involves a precise sequence of steps: first, an oxide semiconductor is formed over a primary insulator. A second insulator is then added, followed by a first conductor. A crucial etching mask is used to pattern the first conductor, creating a second conductor that strategically overlaps the oxide semiconductor. The ingenuity culminates after mask removal, with the formation of a hydrogen-containing layer over the second insulator and second conductor, followed by a specific heat treatment. This unique combination dramatically enhances the electrical and optical properties of the oxide conductor.\n\nFrom a business perspective, this technology unlocks significant value. It enables the creation of next-generation electronic components that are more efficient, visually superior, and open doors for entirely new product categories. Industries reliant on transparent electrodes, such as consumer electronics, renewable energy, and augmented reality, stand to benefit immensely. The market opportunity lies in providing manufacturers with a reliable, scalable method to produce high-performance transparent conductive materials, offering a distinct competitive advantage and fostering innovation in device design and functionality.","layman_explanation":"### What Problem Does This Solve?\nImagine the screens on your smartphone, tablet, or even a smart window. These devices rely on materials that allow light to pass through them (transparency) while also conducting electricity (conductivity). The big challenge for engineers has always been that it's difficult to make a material exceptionally good at both. If you try to make it super clear, it might not conduct electricity very well, making your screen dim or unresponsive. Conversely, if you make it highly conductive, it might become opaque or cloudy. This fundamental trade-off has limited the performance, efficiency, and design possibilities of many modern electronic devices, from high-resolution displays and responsive touchscreens to efficient solar panels and augmented reality headsets.\n\n### How Does It Work?\nThe patent, known as the \"Manufacturing Method for Semiconductor Device,\" introduces a clever, multi-step process to overcome this long-standing hurdle. Think of it like building a very special, high-tech sandwich. First, a tiny, see-through layer that can carry electricity (an 'oxide semiconductor') is placed on a base layer (a 'first insulator'). Then, another insulating layer is added, followed by a layer of conductive material. This conductive layer is then precisely shaped using a stencil-like 'mask' and an etching process, creating a specific electrical pathway that connects perfectly with the see-through semiconductor. The real innovation comes in the final steps: after the shaping, a special 'hydrogen-containing layer' is applied, and then the whole assembly is carefully heated. This unique combination of hydrogen treatment and heat is like a magic touch that optimizes the material, making it incredibly good at both conducting electricity and letting light pass through, without the usual compromises.\n\n### Why Does This Matter?\nThis invention matters because it unlocks a new era of possibilities for electronic devices. By enabling the creation of components that are simultaneously highly conductive and highly transparent, this technology can lead to:\n*   **Brighter, More Efficient Displays:** Imagine smartphone screens that are not only crystal clear but also consume less power and respond faster.\n*   **Superior Touchscreens:** More sensitive and durable touch interfaces for all your devices.\n*   **Advanced Solar Cells:** Transparent solar panels that can be seamlessly integrated into windows or building facades, generating clean energy without being visually intrusive.\n*   **Revolutionary AR/VR Devices:** Lighter, more immersive augmented and virtual reality experiences with clearer optics.\n\nFor businesses, this means a significant competitive advantage. Companies that adopt this manufacturing method can develop products that outperform existing solutions, capture new markets, and drive innovation in consumer electronics, renewable energy, and advanced computing. It's about delivering higher value to customers through superior device performance and opening up entirely new product categories.\n\n### What's Next?\nThe Manufacturing Method for Semiconductor Device lays the groundwork for a future where electronics are more integrated, efficient, and aesthetically pleasing. We can expect to see this technology permeate various industries, leading to faster adoption of transparent electronics in everyday life. For investors, this represents an opportunity to back companies poised to lead in next-generation material science and device manufacturing. As this innovation matures, it will likely accelerate the development of flexible electronics, smart surfaces, and even 'invisible' computing, making technology an even more seamless part of our environment.","technical_analysis":"The \"Manufacturing Method for Semiconductor Device\" (US-9852926) presents a sophisticated process designed to overcome fundamental limitations in transparent conductive oxide (TCO) performance. The invention specifically targets the simultaneous achievement of high electrical conductivity and high optical transmittance, a critical yet challenging requirement for advanced semiconductor devices. The technical architecture and implementation details are meticulously defined, focusing on layered material deposition, precise patterning, and a unique post-treatment methodology.\n\n**Technical Architecture and Implementation Details:**\n1.  **Oxide Semiconductor Formation:** The process begins with forming an oxide semiconductor layer over a first insulator. The choice of oxide semiconductor material is critical; candidates typically include wide bandgap n-type semiconductors such as Indium Gallium Zinc Oxide (IGZO), Zinc Oxide (ZnO), or Indium Tin Oxide (ITO). The first insulator provides electrical isolation and a stable substrate for the subsequent layers. The deposition method (e.g., sputtering, atomic layer deposition, chemical vapor deposition) must ensure a uniform, high-quality film with controlled stoichiometry.\n2.  **Second Insulator Formation:** A second insulator is then formed over both the first insulator and the oxide semiconductor. This layer acts as an additional dielectric, preventing short circuits and providing a robust interface for subsequent metallization. Materials like silicon dioxide (SiO2) or silicon nitride (SiN) are commonly used, deposited via techniques like PECVD (Plasma-Enhanced Chemical Vapor Deposition).\n3.  **First Conductor Formation:** A first conductor layer is deposited over the second insulator. This layer will serve as the precursor for the final patterned electrode. Common materials include metals like aluminum, copper, or alloys, chosen for their high conductivity and compatibility with etching processes.\n4.  **Etching Mask Formation:** An etching mask is formed over the first conductor. This mask, typically a photoresist layer patterned via photolithography, defines the geometry of the subsequent conductive electrode. The precision of this step is paramount for achieving the desired device dimensions and minimizing feature sizes.\n5.  **Second Conductor Formation (Etching):** Using the etching mask, the first conductor is anisotropically etched to form a second conductor. This second conductor is specifically designed to include a region that precisely overlaps with the underlying oxide semiconductor. This overlap ensures efficient current injection into and extraction from the transparent oxide layer, minimizing contact resistance and maximizing device performance. Dry etching techniques (e.g., RIE - Reactive Ion Etching) are preferred for their anisotropy and control.\n6.  **Etching Mask Removal:** Following the etching process, the sacrificial etching mask is removed, typically through plasma ashing or chemical stripping, leaving behind the patterned second conductor.\n7.  **Hydrogen-Containing Layer Formation:** A critical step involves forming a hydrogen-containing layer over the second insulator and the newly patterned second conductor. This layer introduces hydrogen atoms into the vicinity of the oxide semiconductor. Hydrogen can act as a shallow donor in many oxide semiconductors, increasing carrier concentration and thus conductivity. The method of forming this layer could involve hydrogen plasma treatment, hydrogen annealing, or deposition of a hydrogen-rich dielectric layer.\n8.  **Heat Treatment:** The final, crucial step is performing a heat treatment (annealing) after the hydrogen-containing layer formation. This thermal process, often conducted in a controlled atmosphere, facilitates the diffusion and activation of hydrogen within the oxide semiconductor lattice. The heat treatment also helps to reduce defects, improve crystallinity, and stabilize the material properties. The specific temperature, duration, and ambient gas (e.g., inert gas, forming gas) of the annealing process are critical parameters that directly influence the final conductivity and transmittance characteristics.\n\n**Performance Characteristics and Code-Level Implications (Analogous):**\nThe iterative optimization of each layer's properties and the precise control over the hydrogen treatment and annealing directly impact the device's performance. The 'code-level implications' in this context refer to the precise control parameters for each manufacturing step. For instance, the exact gas flow rates, plasma power, temperature profiles, and precursor concentrations during deposition and treatment are analogous to code variables that must be fine-tuned. Deviations can lead to increased sheet resistance, reduced optical transparency, or poor device stability. The integration patterns are essentially the lithographic masks and alignment procedures, ensuring that the patterned conductors precisely contact the active oxide semiconductor regions. This detailed control over material science and process engineering makes the Manufacturing Method for Semiconductor Device a robust and highly effective solution for next-generation transparent electronics.","business_analysis":"The \"Manufacturing Method for Semiconductor Device\" (US-9852926) represents a significant leap forward in material science and semiconductor fabrication, with profound business implications across multiple high-growth sectors. This innovation directly addresses a critical bottleneck: the long-standing challenge of simultaneously achieving high electrical conductivity and high optical transmittance in oxide conductors. By resolving this trade-off, the patent unlocks substantial market opportunities and competitive advantages.\n\n**Market Opportunity Size:** The market for transparent conductive oxides (TCOs) is vast and growing, driven by the proliferation of display technologies, touchscreens, solar cells, and emerging applications like augmented reality (AR) and flexible electronics. The global TCO market was valued at over $5 billion in 2022 and is projected to reach well over $10 billion by the end of the decade. This patent positions manufacturers to capture a premium segment of this market by offering superior performance that current solutions cannot match. The ability to produce TCOs with both high conductivity and high transmittance opens up new design possibilities and product categories, expanding the total addressable market for transparent components.\n\n**Competitive Advantages:** This innovation provides a distinct competitive edge. Manufacturers adopting the Manufacturing Method for Semiconductor Device can produce devices with: \n*   **Superior Performance:** Products will exhibit brighter displays, more responsive touch interfaces, and higher efficiency in transparent solar cells, differentiating them from competitors relying on conventional TCOs.\n*   **Reduced Compromises:** Designers no longer need to sacrifice one critical property for another, allowing for optimized product design without performance limitations.\n*   **Cost Efficiency (Long-term):** While initial implementation may require process adjustments, the improved performance and yield, coupled with the ability to create higher-value products, can lead to significant ROI. Furthermore, the robust process could lead to fewer post-production failures related to TCO performance.\n*   **Innovation Leader:** Early adopters will be positioned as leaders in next-generation electronics, attracting talent, investment, and market share.\n\n**Revenue Potential and Business Models:** The revenue potential is substantial. Companies could license this technology, produce specialized TCO materials or components, or integrate it directly into their device manufacturing. \n*   **Component Sales:** Manufacturing and selling advanced oxide semiconductor layers or complete transparent electrodes to device assemblers.\n*   **Licensing:** Offering intellectual property licenses to other semiconductor manufacturers or device companies.\n*   **Value-Added Products:** Integrating these superior TCOs into proprietary end-products (e.g., high-end displays, AR headsets, transparent solar modules) to command premium pricing.\n\n**Strategic Positioning:** This patent enables companies to strategically position themselves at the forefront of several key technology trends:\n*   **Advanced Displays:** Powering micro-LEDs, OLEDs, and flexible displays with enhanced visual quality and power efficiency.\n*   **Renewable Energy:** Developing more efficient and aesthetically integrated transparent solar panels.\n*   **Augmented/Virtual Reality:** Enabling lighter, more transparent, and higher-performance optical components for AR/VR headsets.\n*   **IoT and Smart Surfaces:** Facilitating the creation of invisible, interactive interfaces on various surfaces.\n\n**ROI Projections:** Investing in the adoption of the Manufacturing Method for Semiconductor Device promises a strong return. By enabling products with superior performance characteristics, companies can expect:\n*   **Increased Market Share:** Capturing segments currently underserved by existing TCO limitations.\n*   **Premium Pricing:** Justifying higher price points for advanced products.\n*   **Accelerated R&D Cycles:** Focusing innovation on device applications rather than TCO material limitations.\n*   **New Market Entry:** Opening doors to entirely new product categories that require this specific combination of high conductivity and transmittance. The long-term ROI is driven by sustained innovation and market leadership in critical technology domains.","faqs":[{"answer":"The Manufacturing Method for Semiconductor Device (US-9852926) is a groundbreaking patent that describes a novel manufacturing process for semiconductor devices. Specifically, it focuses on creating an oxide conductor with the dual properties of exceptionally high electrical conductivity and high optical transmittance. This innovation addresses a long-standing challenge in the electronics industry where achieving both properties simultaneously in transparent conductive materials has historically been difficult.\n\nThe patent outlines a meticulous, multi-step fabrication sequence that includes precise layering of materials, advanced patterning techniques, and a unique post-treatment process involving a hydrogen-containing layer and subsequent heat treatment. This combination is key to optimizing the material's electronic and optical characteristics.\n\nEssentially, this invention provides a method to produce 'see-through wires' that are both incredibly efficient at carrying electricity and perfectly clear, paving the way for next-generation transparent electronic components.","question":"What is Manufacturing Method for Semiconductor Device?"},{"answer":"The Manufacturing Method for Semiconductor Device operates through a precisely orchestrated sequence of material deposition and treatment steps. It begins by forming an oxide semiconductor layer over a first insulator, which acts as a base. A second insulator is then added, followed by a first conductor layer.\n\nA crucial step involves using an etching mask to precisely pattern the first conductor, creating a second conductor that strategically overlaps the underlying oxide semiconductor. This ensures excellent electrical contact and efficient charge flow. The real innovation, however, comes after the etching mask is removed.\n\nA hydrogen-containing layer is then formed over the second insulator and the patterned second conductor, followed by a specific heat treatment. This unique combination introduces hydrogen atoms into the oxide semiconductor lattice, where they can act as shallow donors, significantly boosting electrical conductivity. Simultaneously, the heat treatment, often in the presence of hydrogen, helps to passivate defects and improve the material's crystallinity, thereby enhancing optical transmittance. This synergistic approach allows the oxide conductor to achieve both high conductivity and high transparency.","question":"How does Manufacturing Method for Semiconductor Device work?"},{"answer":"The Manufacturing Method for Semiconductor Device patent solves the critical problem of the inherent trade-off between electrical conductivity and optical transmittance in traditional transparent conductive materials. For decades, engineers have struggled to create materials that are simultaneously highly conductive (allowing electricity to flow easily) and highly transparent (allowing light to pass through clearly). Typically, improving one property would degrade the other.\n\nThis limitation has significantly constrained the design and performance of various electronic devices. For instance, displays might sacrifice brightness or responsiveness for transparency, and transparent solar cells might be less efficient than opaque ones. The invention provides a method to overcome this fundamental barrier, enabling the fabrication of oxide conductors that excel in both conductivity and transmittance without compromise, thereby unlocking new possibilities for device innovation and performance.","question":"What problem does Manufacturing Method for Semiconductor Device solve?"},{"answer":"The patent US-9852926, titled \"Manufacturing Method for Semiconductor Device,\" was filed by an assignee (the entity to whom the patent rights are assigned). The inventors, who are the individuals credited with conceiving the invention, are not specified in the provided data. Typically, the inventors are named on the patent document itself.\n\nWhile the specific individuals are not listed here, the invention represents a collaborative effort in advanced material science and semiconductor engineering, usually involving a team of researchers and developers within a company or research institution. Their collective expertise led to this significant breakthrough in manufacturing high-performance transparent conductive materials.","question":"Who invented Manufacturing Method for Semiconductor Device?"},{"answer":"The Manufacturing Method for Semiconductor Device offers several key benefits that are set to revolutionize various electronics sectors.\n\nFirstly, its primary benefit is achieving **simultaneous high electrical conductivity and high optical transmittance** in an oxide conductor. This eliminates the traditional trade-off, leading to superior performance in transparent electronic components. Secondly, it enables the creation of **brighter, more energy-efficient displays** for devices like smartphones, tablets, and televisions, enhancing visual quality and extending battery life. Thirdly, it facilitates the development of **more responsive and durable touchscreens**, improving user interaction.\n\nFurthermore, this technology is crucial for **high-efficiency transparent solar cells**, allowing for aesthetically integrated photovoltaic solutions in architecture and consumer products. Lastly, it paves the way for **next-generation augmented reality (AR) and virtual reality (VR) devices**, enabling lighter, clearer, and more immersive experiences. These benefits collectively drive innovation, open new market opportunities, and offer a significant competitive advantage for manufacturers.","question":"What are the key benefits of Manufacturing Method for Semiconductor Device?"},{"answer":"The Manufacturing Method for Semiconductor Device significantly differentiates itself from prior art, particularly traditional transparent conductive oxides (TCOs) like Indium Tin Oxide (ITO), by overcoming their inherent limitations. Prior art TCOs often struggle to achieve high conductivity without sacrificing transparency, or vice versa. They also tend to be brittle and may rely on scarce, expensive materials.\n\nThis invention's key differentiators include its meticulous layered structure, precise patterning of conductors to optimally overlap the oxide semiconductor, and most notably, its unique post-treatment process. The introduction of a hydrogen-containing layer followed by a specific heat treatment is a departure from conventional methods. This combination synergistically enhances both conductivity (by introducing electron donors) and transmittance (by passivating defects and improving crystallinity), a level of integrated performance not typically found in prior art. This allows the Manufacturing Method for Semiconductor Device to deliver superior, uncompromised performance across both critical metrics, enabling applications that were previously constrained by the limitations of existing TCOs.","question":"How is Manufacturing Method for Semiconductor Device different from prior art?"},{"answer":"The Manufacturing Method for Semiconductor Device is poised to impact a wide array of industries that rely on advanced electronic components, particularly those requiring transparent and conductive materials.\n\n**Consumer Electronics:** This is a primary beneficiary, with implications for smartphones, tablets, laptops, and televisions. Expect brighter, more energy-efficient displays, and more responsive touchscreens. **Augmented and Virtual Reality (AR/VR):** The technology is crucial for developing lighter, clearer, and more immersive AR/VR headsets, enhancing user experience and accelerating adoption. **Renewable Energy:** It will revolutionize transparent solar cells, enabling more efficient and aesthetically integrated photovoltaic solutions for smart windows and building-integrated photovoltaics (BIPV). **Automotive:** Transparent displays for dashboards and heads-up displays could see significant advancements. **Flexible Electronics and Wearables:** The robust performance will drive innovation in bendable screens and advanced wearable sensors. **IoT and Smart Surfaces:** It facilitates the creation of invisible, interactive interfaces on various surfaces, pushing the boundaries of smart environments. Each of these sectors will benefit from the ability to integrate high-performance transparent conductors without compromise.","question":"What industries will Manufacturing Method for Semiconductor Device impact?"},{"answer":"The patent titled \"Manufacturing Method for Semiconductor Device\" (US-9852926) has specific dates associated with its lifecycle.\n\nIt was filed on **October 17, 2016**. The filing date marks when the patent application was officially submitted to the patent office. This date is crucial for establishing the patent's priority.\n\nIt was subsequently published on **December 26, 2017**. The publication date is when the patent application or granted patent becomes publicly available. This allows other researchers and companies to review the details of the invention. While the provided data does not explicitly state the grant date, the publication date of 2017-12-26 indicates its public availability.","question":"When was Manufacturing Method for Semiconductor Device filed/granted?"},{"answer":"The commercial applications of the Manufacturing Method for Semiconductor Device are extensive and span across multiple high-growth technology sectors. Its ability to create oxide conductors with both high conductivity and high transmittance makes it invaluable.\n\nOne major application is in **advanced display technologies**, including OLED, micro-LED, and flexible displays, leading to products with superior visual quality, lower power consumption, and enhanced responsiveness. Another significant area is **touchscreens**, where the technology can produce more sensitive, durable, and optically clear interfaces for smartphones, tablets, and interactive kiosks. In the **renewable energy sector**, it enables the development of highly efficient **transparent solar cells** for windows, building facades, and portable chargers, promoting sustainable energy solutions. Furthermore, it is critical for **augmented reality (AR) and virtual reality (VR) devices**, allowing for the fabrication of lighter, less intrusive, and higher-performance optical components. The innovation also has potential in **flexible electronics**, **wearable technology**, and **smart surfaces**, where transparent and high-performance conductive layers are essential for future product designs. These applications represent substantial market opportunities for manufacturers and innovators.","question":"What are the commercial applications of Manufacturing Method for Semiconductor Device?"},{"answer":"The Manufacturing Method for Semiconductor Device lays a robust foundation for numerous future developments in transparent electronics. We can anticipate several key areas of evolution and application.\n\nFirstly, there will likely be further **optimization of material selection and process parameters**. Researchers will explore new oxide semiconductor compositions and fine-tune the hydrogen treatment and heat treatment protocols to achieve even higher performance, potentially pushing beyond current conductivity and transmittance limits. Secondly, integration into **flexible and stretchable electronic platforms** is a strong future direction. The superior properties of these oxide conductors will enable truly robust bendable displays and wearable sensors. Thirdly, expect advancements in **large-area manufacturing techniques** to make this technology more cost-effective for large-scale applications like smart windows and architectural solar panels.\n\nFurthermore, the technology could be adapted for **multi-functional transparent devices**, combining display, sensing, and energy harvesting capabilities into single transparent components. The long-term vision includes **ubiquitous transparent computing**, where interactive surfaces and 'invisible' technology are seamlessly integrated into our daily environments, making electronics more intuitive and less obtrusive. These developments will solidify the Manufacturing Method for Semiconductor Device as a cornerstone for future innovation in the electronics industry.","question":"What are the future developments expected for Manufacturing Method for Semiconductor Device?"}],"topics":["semiconductor manufacturing method","oxide conductor","high conductivity","high transmittance","transparent electronics","semiconductor","industry","relentless"],"tech_cluster":null},"seo":{"title":"Manufacturing Method for Semiconductor Device - Patent US-9852926","description":"Discover the groundbreaking Manufacturing Method for Semiconductor Device for high conductivity & transmittance. Full patent analysis, claims, and applications.","keywords":["semiconductor manufacturing method","oxide conductor","high conductivity","high transmittance","transparent electronics","display technology","solar cells","US-9852926 patent","semiconductor device fabrication","hydrogen treatment semiconductor","advanced TCO","patent analysis"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852926","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852926","citation_suggestion":"Patentable. \"Manufacturing method for semiconductor device\" (US-9852926). https://patentable.app/patents/US-9852926","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852926","json":"https://patentable.app/api/llm-context/US-9852926","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:36:01.234Z"}