{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852933","patent":{"patent_number":"US-9852933","title":"Substrate processing apparatus, substrate processing method, and recording medium","assignee":null,"inventors":[],"filing_date":"2015-04-30T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path."},"analysis":{"summary":"The patent titled \"Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium\" introduces a critical advancement in semiconductor manufacturing, specifically optimizing the heating process for the outer peripheral portion of a substrate. This innovation directly addresses the long-standing challenge of achieving uniform thermal treatment across an entire wafer, a factor crucial for preventing defects and maximizing yield in microfabrication.\n\nAt its core, this technology describes a substrate processing apparatus that includes a holding unit for the substrate, a rotation unit to ensure even exposure, and a processing liquid supply unit. The key technical approach lies within its sophisticated heating device. This device is ingeniously designed with two distinct gas flow paths: a primary discharge flow path precisely directed to heat the outer peripheral portion of the substrate, and a secondary branch flow path that discharges gas towards other regions or away from the substrate. Both of these paths are heated by a common heating unit, ensuring consistent gas temperature and allowing for highly controlled and localized thermal management.\n\nThe problem this patent solves is the pervasive issue of inconsistent heating at the edges of semiconductor wafers, which often leads to stress, warping, and various material defects. Traditional heating methods struggle to provide the granular control needed for these sensitive peripheral areas, resulting in significant yield losses and increased production costs. By offering a targeted and optimized heating solution, this invention promises to mitigate these issues effectively.\n\nFrom a business perspective, the applications are profound. Manufacturers can expect a substantial increase in wafer yield, a reduction in scrap rates, and improved overall product quality. This translates into significant cost savings, faster time-to-market for advanced devices, and a stronger competitive position in the global semiconductor industry. The ability to precisely control thermal conditions also opens doors for processing new, more delicate materials and fabricating next-generation devices with enhanced performance and reliability. The market opportunity lies in the universal need for higher precision and efficiency in semiconductor and related advanced material processing.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're trying to build a perfectly flat, incredibly thin pancake, and every single part of it needs to be cooked to precisely the same golden-brown consistency. If one part is undercooked and another is burnt, the whole pancake is ruined. This is a bit like what happens in semiconductor manufacturing, where the 'pancakes' are silicon wafers, and the 'cooking' is a complex series of heating processes.\n\nThe critical problem this patent, the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium, addresses is the challenge of inconsistent heating across these semiconductor wafers, especially at their very edges. These edges are notoriously difficult to heat uniformly, often leading to microscopic defects, stress, or inconsistent material properties. For chip manufacturers, these imperfections mean lower yields – fewer good chips per wafer – which translates directly into significant financial losses and slower innovation cycles. Existing heating methods often struggle with this 'edge effect,' making it a persistent bottleneck in producing the advanced, reliable microchips we rely on daily.\n\n### How Does It Work?\n\nThis innovation introduces a smarter way to 'cook' the wafers. Think of it as a highly specialized, precision-controlled oven. The core of the system includes a platform that holds the wafer and spins it, ensuring that every part of the wafer gets its turn under the heat. It also has a way to apply special liquids during processing, which is common in chip making.\n\nThe real genius, however, is in its heating mechanism. Instead of just blasting heat generally, this system uses a clever 'two-way hairdryer' approach. One 'hairdryer nozzle' is specifically angled and positioned to direct a stream of perfectly heated gas *only* at the outer rim of the spinning wafer. This ensures those tricky edges get the exact thermal treatment they need. Simultaneously, a second 'hairdryer nozzle' blows heated gas to other parts of the processing chamber or even away from the wafer. Crucially, both 'hairdryers' get their hot air from the *same* main heater, ensuring that the temperature of the gas is consistent and highly controllable. This allows for incredibly precise, localized heating, almost like a chef using a torch to caramelize only the very top of a crème brûlée, while keeping the rest perfectly chilled.\n\n### Why Does This Matter?\n\nThis technology matters immensely for several reasons that directly impact the bottom line and future of technology:\n\n1.  **Increased Profitability:** By ensuring more uniform heating, the patent significantly reduces defects on the wafers. This means more functional chips from each wafer, leading to higher manufacturing yields. For an industry that measures success in tiny fractions of a percentage point increase in yield, this translates into millions, if not billions, of dollars in increased revenue and reduced waste.\n2.  **Faster Innovation:** With more reliable and consistent processing, engineers can experiment with new, more delicate materials or complex chip designs that were previously too challenging to manufacture. This accelerates the development of next-generation processors for AI, IoT, electric vehicles, and countless other applications.\n3.  **Competitive Advantage:** Companies that adopt this technology will gain a significant edge over competitors still grappling with older, less precise heating methods. It enables them to produce higher-quality, more reliable chips more efficiently.\n4.  **Reduced Environmental Impact:** Higher yields mean less material waste and energy consumption per functional chip, contributing to more sustainable manufacturing practices.\n\n### What's Next?\n\nThe Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium is poised to become a foundational technology in advanced semiconductor fabrication. We can expect to see its principles integrated into new generations of wafer processing equipment, becoming a standard for precision thermal management. Future applications might even extend beyond traditional silicon, impacting the production of advanced optics, data storage, or specialized biomedical sensors where precise, localized heating of disc-shaped substrates is critical. For investors, this represents an opportunity in a stable, high-growth sector, backing a solution that tackles a fundamental industry challenge with clear commercial benefits.","technical_analysis":"The patent \"Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium\" (US-9852933) outlines a sophisticated solution for one of the most persistent challenges in semiconductor fabrication: achieving precise and uniform thermal processing across the entirety of a substrate, particularly its outer peripheral region. This technical analysis will delve into the architecture, implementation considerations, and performance implications of this innovative approach.\n\n**Technical Architecture and Core Components**\nAt the heart of this invention is a substrate processing apparatus designed for optimized heating. The system comprises several key integrated units:\n\n1.  **Holding Unit:** Configured to securely hold a substrate (e.g., a silicon wafer) during processing. This unit ensures stability and precise positioning, critical for accurate thermal application.\n2.  **Rotation Unit:** Coupled with the holding unit, this mechanism is responsible for rotating the substrate. Rotation is essential for achieving radial symmetry in processing, ensuring that all peripheral segments of the wafer are exposed to the heating mechanism consistently over time.\n3.  **Processing Liquid Supply Unit:** Designed to dispense processing liquids onto the substrate. While not directly involved in heating, its integration signifies a comprehensive processing environment, where heating is often one step among several liquid-based treatments (e.g., cleaning, etching, coating).\n4.  **Heating Device:** This is the central innovation. It is specifically configured to heat the outer peripheral portion of the substrate. The device's ingenious design includes:\n    *   **Discharge Flow Path:** A dedicated conduit through which a precisely controlled gas stream is discharged directly towards the outer peripheral region of the substrate. This path's geometry and nozzle design are critical for focusing the thermal energy where it's most needed, compensating for edge effects and heat loss.\n    *   **Branch Flow Path:** A secondary conduit that discharges gas towards a region *other than* the substrate's outer peripheral portion, or even entirely away from the substrate. This path provides crucial flexibility. It can be used to maintain a specific ambient temperature within the processing chamber, to create a desired thermal gradient across the main body of the substrate, or to purge unwanted gases.\n    *   **Heating Unit:** A single, unified heating element (e.g., resistive heater, radiant heater) that heats *both* the discharge flow path and the branch flow path. This shared heating source is vital for ensuring thermal consistency between the two gas streams, enabling a predictable and controllable differential heating strategy.\n\n**Implementation Details and Algorithm Specifics**\nImplementing this technology effectively requires sophisticated control systems. The heating unit's temperature, the gas flow rates through both the discharge and branch paths, and the rotation speed of the substrate must be precisely managed. This would likely involve:\n\n*   **PID Control Loops:** For maintaining stable gas temperatures and flow rates, ensuring the delivered thermal energy is consistent.\n*   **Real-time Temperature Monitoring:** Infrared (IR) thermography or embedded thermocouples on the substrate holding unit could provide real-time surface temperature maps. This data would be fed back into the control system.\n*   **Adaptive Algorithms:** To dynamically adjust heating parameters based on the measured temperature profiles. For instance, if the periphery is slightly underheated, the algorithm could increase gas flow through the discharge path or slightly increase the heating unit temperature, while adjusting the branch flow to maintain overall chamber conditions.\n*   **Fluid Dynamics Modeling:** Computational Fluid Dynamics (CFD) would be essential during design to optimize nozzle geometries, flow path dimensions, and gas dispersion patterns to achieve the desired thermal profiles and minimize turbulence.\n*   **Gas Chemistry:** The choice of gas (e.g., N2, Ar, clean dry air) for thermal transfer would depend on the specific processing environment and material compatibility. The system must be designed to handle the selected gas safely and efficiently.\n\n**Performance Characteristics and Code-Level Implications**\nThe primary performance characteristic is significantly enhanced thermal uniformity across the substrate, especially at the edges. This translates to:\n\n*   **Reduced Defect Density:** Minimizing thermal stress and non-uniform material growth/etching, leading to fewer device failures.\n*   **Improved Critical Dimension (CD) Control:** Better uniformity in film thickness and feature sizes across the entire wafer.\n*   **Wider Process Window:** The ability to achieve desired process outcomes over a broader range of operating parameters due to more precise control.\n\nAt a code level, the control software would be complex, integrating sensor data acquisition, multi-variable control algorithms, state machine logic for process sequencing, and safety interlocks. Libraries for real-time operating systems (RTOS), hardware abstraction layers (HAL), and potentially machine learning frameworks for predictive control and optimization would be critical. The system would need robust error handling and logging capabilities for diagnostics and process traceability.\n\n**Integration Patterns and Broader Implications**\nThis heating device is designed to be an integral part of a larger substrate processing apparatus. Its integration would involve mechanical coupling with the holding and rotation units, fluidic connections for gas supply, and electrical/data interfaces for control and sensing. This technology could be particularly beneficial for advanced processes like Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), and rapid thermal annealing (RTA), where precise temperature control is paramount for film quality and material phase transformations. The ability to independently control peripheral heating offers a new degree of freedom for process engineers, allowing for novel material processing techniques and pushing the boundaries of miniaturization and device complexity.","business_analysis":"The \"Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium\" patent represents a significant business opportunity within the global semiconductor manufacturing industry, a sector characterized by intense competition, high capital expenditure, and a relentless pursuit of efficiency and yield improvement. This innovation directly addresses a critical pain point in wafer fabrication, positioning it for substantial market impact and revenue potential.\n\n**Market Opportunity Size**\nThe global semiconductor manufacturing equipment market is projected to reach hundreds of billions of dollars, with wafer processing equipment forming a substantial segment. Within this, thermal processing and cleaning equipment are indispensable. The problem of uneven heating, particularly at wafer peripheries, is universal across all advanced semiconductor fabs. Each percentage point increase in yield translates to billions of dollars in saved costs and increased revenue for chipmakers. Therefore, any technology that can reliably improve yield and reduce defects at scale commands a premium. This patent targets a fundamental and pervasive issue, making its addressable market incredibly large, encompassing all manufacturers of logic, memory, and specialized semiconductors.\n\n**Competitive Advantages**\nThis patent offers several distinct competitive advantages:\n\n1.  **Superior Yields:** By optimizing peripheral heating, the technology directly leads to a reduction in edge-related defects (e.g., stress, film non-uniformity), resulting in higher usable dies per wafer. This is a paramount metric for profitability in semiconductor manufacturing.\n2.  **Enhanced Process Control:** The dual-flow gas path system provides an unprecedented level of granular thermal control, allowing manufacturers to fine-tune heating profiles for specific materials and processes that were previously unmanageable. This precision is difficult for traditional, broader heating methods to replicate.\n3.  **Material Versatility:** Improved thermal control enables the processing of more delicate or advanced materials that are highly sensitive to temperature variations, opening new avenues for innovation in chip design and material science.\n4.  **Cost Reduction:** Higher yields mean less material waste and fewer reworks, directly reducing operational costs. More robust processes also lead to reduced downtime and maintenance.\n5.  **Strategic Positioning:** Companies adopting this technology will gain a technological edge, allowing them to produce higher-quality, more reliable chips, potentially securing larger market shares or commanding premium pricing for their advanced products.\n\n**Revenue Potential and Business Models**\nThe revenue potential for this technology is significant. Possible business models include:\n\n*   **Direct Sales of Equipment:** Manufacturing and selling substrate processing apparatuses incorporating this patented heating device.\n*   **Licensing:** Licensing the patent to existing semiconductor equipment manufacturers (OEMs) who can integrate the technology into their current product lines (e.g., spin processors, wet benches).\n*   **Retrofit Solutions:** Developing upgrade kits or modules to retrofit existing processing equipment with the new heating device, offering a cost-effective solution for fabs.\n*   **Process Consulting/Optimization:** Offering services to help fabs integrate and optimize their processes using this new heating methodology.\n\nGiven the high value placed on yield and efficiency in the semiconductor industry, a licensing model could generate substantial royalty revenues, while direct sales would command high unit prices due to the specialized nature and impact of the equipment.\n\n**Strategic Positioning**\nThis innovation strategically positions its deployers as leaders in advanced manufacturing process technology. It aligns perfectly with industry trends towards smaller nodes, 3D integration, and exotic materials, all of which demand tighter process control. By solving a fundamental thermal challenge, this patent reinforces a company's reputation for cutting-edge engineering and problem-solving capabilities. It also provides a strong intellectual property barrier against competitors struggling with similar issues.\n\n**ROI Projections**\nThe return on investment for fabs implementing this technology could be exceptionally high. A modest 1-2% increase in yield for high-volume, high-value wafers can translate into tens of millions, or even hundreds of millions, of dollars in annual savings or increased revenue for a single fab. The investment in new equipment or licensing fees would likely be recouped quickly, often within a year or two, given the direct impact on profitability. Furthermore, the ability to produce superior products could open new market segments and customer relationships, offering long-term strategic value beyond immediate ROI.","faqs":[{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium is a patent (US-9852933) that introduces an innovative system and method for optimizing the heating process of a substrate, particularly focusing on its outer peripheral portion. In semiconductor manufacturing, a substrate (like a silicon wafer) undergoes various heating steps crucial for creating integrated circuits. This invention provides a more precise and efficient way to apply heat, especially to the edges of these wafers, which are traditionally difficult to heat uniformly.\n\nAt its core, this patent describes an apparatus that holds and rotates the substrate while also supplying processing liquids. The key innovation lies within its heating device, which uses a unique dual-flow gas system. One gas path precisely directs heated gas to the substrate's outer edge, while another manages the gas flow to other areas or away from the substrate. Both gas streams are heated by a single unit, ensuring consistent temperature control.\n\nThis technology aims to overcome the pervasive 'edge effect' problem in wafer fabrication, where inconsistent heating at the periphery leads to defects. By providing targeted and controllable heating, the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium significantly enhances the quality and yield of semiconductor devices. It represents a critical advancement in thermal management for microfabrication processes.","question":"What is Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium operates through a sophisticated combination of mechanical handling and precise thermal management. First, a holding unit securely grips the substrate (e.g., a silicon wafer), which is then rotated by a rotation unit. This rotation is essential for ensuring that all parts of the substrate's periphery receive uniform exposure to the heating mechanism over time.\n\nThe core functionality resides in its specialized heating device, which employs a unique dual-flow gas system. This device includes two distinct gas flow paths:\n\n1.  **Discharge Flow Path:** This path is designed to precisely direct a stream of heated gas specifically towards the outer peripheral portion of the rotating substrate. The gas is delivered through a nozzle or series of nozzles, ensuring focused thermal energy where it's most needed to compensate for heat loss at the edges.\n2.  **Branch Flow Path:** This is a secondary path that discharges heated gas to regions other than the substrate's outer periphery, or even away from the substrate entirely. This allows for fine-tuning of the overall ambient temperature and pressure within the processing chamber, or for specific thermal gradients across the main body of the substrate, without interfering with the targeted edge heating.\n\nCrucially, both the discharge and branch flow paths are heated by a single, common heating unit. This ensures that the gas delivered through both channels maintains a consistent and controllable base temperature. By combining rotation with this highly targeted and managed gas flow, the invention achieves unparalleled thermal uniformity across the entire substrate, effectively eliminating edge-related heating inconsistencies and improving processing outcomes for sensitive materials. This method provides dynamic, localized thermal control, a significant improvement over traditional broad heating techniques.","question":"How does Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium work?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium patent addresses a fundamental and costly problem in semiconductor manufacturing: the challenge of achieving uniform thermal processing across the entire surface of a substrate, particularly at its outer peripheral portion. In conventional heating methods, the edges of a semiconductor wafer tend to heat differently than the center due to factors like higher heat loss, proximity to cooler handling equipment, and complex gas flow dynamics near the edge. This phenomenon is commonly referred to as the 'edge effect.'\n\nThis inconsistency in heating leads to a cascade of problems:\n\n*   **Defects:** Non-uniform heating can cause stress, warping, and microscopic flaws in the material structure or deposited films at the wafer's periphery.\n*   **Reduced Yields:** Defective areas at the edges mean fewer usable chips can be cut from each wafer, leading to significant material waste and increased production costs.\n*   **Performance Variability:** Even if not outright defective, chips from inconsistently heated regions may exhibit varied performance characteristics.\n*   **Process Limitations:** The inability to achieve precise thermal control at the edges restricts the use of certain advanced materials or processes that are highly sensitive to temperature variations.\n\nBy providing a highly localized and controllable heating solution for the substrate's outer periphery, this patent directly mitigates these issues. It enables manufacturers to reduce defects, boost yields, and expand the capabilities for processing next-generation semiconductor devices, thereby improving overall manufacturing efficiency and profitability. The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium effectively solves a long-standing bottleneck in microfabrication thermal management.","question":"What problem does Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium solve?"},{"answer":"The patent data provided does not specify the names of the inventors or the assignee (the company or entity to whom the patent rights are assigned). However, the existence of the patent, \"Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium\" (US-9852933), indicates that a team of innovators, likely engineers and researchers in the field of semiconductor manufacturing or materials science, developed this groundbreaking technology. Patents are typically filed by individuals or research groups and then assigned to the companies they work for, especially in industries with high research and development investment like microelectronics.\n\nThis invention represents a significant contribution to the field of substrate processing, addressing critical challenges in thermal management. The development of such a sophisticated system requires expertise in fluid dynamics, thermal engineering, material science, and automation. While specific names are not listed in the provided abstract, the innovation itself speaks to the ingenuity of the team behind the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium. Their work is poised to have a lasting impact on how semiconductor devices are manufactured globally.","question":"Who invented Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium offers several significant benefits for semiconductor manufacturing and related industries:\n\n1.  **Enhanced Yields and Reduced Defects:** By precisely controlling the heating of the substrate's outer peripheral portion, this technology drastically reduces the occurrence of edge-related defects. This directly translates into a higher number of usable dies (individual chips) per wafer, leading to a substantial increase in manufacturing yields and a reduction in costly material waste.\n2.  **Superior Thermal Uniformity:** The unique dual-flow gas path system ensures unprecedented thermal uniformity across the entire substrate, especially at the notoriously difficult edges. This consistency is crucial for critical processes like film deposition, etching, and annealing, where even minor temperature variations can compromise material properties and device performance.\n3.  **Expanded Process Window:** The precise and controllable heating allows for a broader range of operating parameters for temperature-sensitive processes. This provides greater flexibility for process engineers and enables the successful fabrication of more complex or delicate device structures and materials that were previously challenging to process.\n4.  **Cost Efficiency:** Higher yields and reduced defects directly lower per-chip manufacturing costs. Additionally, the targeted heating approach can lead to more energy-efficient operations compared to less precise, broad heating methods, further contributing to cost savings. The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium thus improves both operational efficiency and profitability.\n5.  **Enabling Advanced Technologies:** As chip design moves towards smaller nodes and new materials, the need for atomic-level precision in thermal processing becomes paramount. This innovation provides a foundational capability for manufacturing next-generation devices, accelerating the development of advanced electronics for AI, IoT, and other high-tech applications. It ensures that the physical limitations of thermal processing do not hinder the progress of microelectronics.","question":"What are the key benefits of Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium distinguishes itself from prior art by offering a fundamentally more precise and targeted approach to substrate heating, particularly for the challenging outer peripheral regions. Traditional methods, such as hot plates, radiant lamps, or general convective heating, typically apply heat broadly across the entire wafer or rely on complex multi-zone systems that still struggle with fine-grained control at the edges.\n\nHere are the key differentiators of this patent:\n\n1.  **Targeted Peripheral Heating:** Unlike prior art that often compromises between overall uniformity and edge treatment, this invention features a dedicated 'discharge flow path' that precisely directs a stream of heated gas *specifically* to the substrate's outer periphery. This active, focused compensation for edge effects is a significant departure from less direct heating methods.\n2.  **Independent Ambient Thermal Management:** The inclusion of a 'branch flow path' allows for the independent management of ambient gas conditions within the processing chamber. This means the system can maintain a stable background temperature or pressure without interfering with the precise, localized heating at the edge. Prior art often struggles to decouple these two aspects of thermal control.\n3.  **Unified Heating Source for Dual Paths:** Both the targeted discharge path and the ambient branch path are heated by a single, common heating unit. This ensures thermal consistency between the two gas streams, simplifying control and enhancing the predictability and repeatability of the differential heating strategy. Many prior art multi-zone systems might use separate heaters, leading to potential inconsistencies.\n4.  **Dynamic Uniformity through Rotation:** While some prior art systems use rotation, its combination with the precisely targeted gas flow in the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium ensures dynamic, time-averaged thermal uniformity around the entire circumference, effectively mitigating any azimuthal non-uniformities from the gas discharge.\n\nIn essence, this patent moves beyond merely mitigating the 'edge effect' to actively and precisely optimizing the thermal profile at the wafer's periphery, providing a level of control and efficiency not readily achievable with previous technologies. It addresses a long-standing problem with a direct and elegant engineering solution.","question":"How is Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium different from prior art?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium patent is primarily poised to have a profound impact on the **semiconductor manufacturing industry**. This includes all sectors involved in the fabrication of integrated circuits, such as:\n\n*   **Logic and Memory Chip Manufacturers:** Companies producing CPUs, GPUs, DRAM, NAND flash, and other advanced memory solutions will benefit from increased yields and improved reliability.\n*   **Specialty Semiconductor Manufacturers:** Producers of power semiconductors, optoelectronics, MEMS devices, and sensors, where precise material properties are critical, will find this technology invaluable.\n*   **Semiconductor Equipment Manufacturers (OEMs):** Companies that design and build the machines used in fabs will likely integrate this patented technology into their next-generation processing apparatuses, such as spin coaters, wet benches, and rapid thermal processing systems.\n\nBeyond the core semiconductor industry, the fundamental principles of precise, localized thermal management could also impact other advanced manufacturing sectors. Any industry that relies on the precise processing of disc-shaped or planar substrates where thermal uniformity is critical could potentially benefit from adaptations of this technology. These might include:\n\n*   **Advanced Optics:** Manufacturing of high-precision lenses, mirrors, or optical filters where thermal stress during processing can compromise optical quality.\n*   **Data Storage Media:** Production of hard disk platters or advanced optical storage media requiring extremely flat and uniformly processed surfaces.\n*   **Biomedical Devices:** Fabrication of microfluidic devices, biosensors, or other medical implants that involve delicate material processing and require stringent quality control.\n\nOverall, the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium is set to elevate the standards of precision thermal processing across a range of high-tech manufacturing domains, enabling higher quality products and more efficient production. Its impact will be felt wherever exacting thermal control of substrates is a critical success factor.","question":"What industries will Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium impact?"},{"answer":"The patent for the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium (US-9852933) has specific key dates in its lifecycle:\n\n*   **Filing Date:** The patent application for this innovation was filed on **April 30, 2015**. This date marks when the inventors or assignee submitted their application to the patent office, officially beginning the examination process. The filing date is crucial as it typically establishes the priority date for the invention, meaning any subsequent similar inventions would need to demonstrate an earlier conception or filing to claim priority.\n\n*   **Publication Date:** The patent was subsequently published on **December 26, 2017**. This is the date when the patent document became publicly available, disclosing the details of the invention to the world. It allows others to review the technology, understand its claims, and avoid infringement.\n\n*   **Grant Date (Implied):** While not explicitly stated as 'granted date' in the prompt, the fact that it is referred to as 'Patent US-9852933' and has a publication date typically implies that the patent has been granted and issued by the U.S. Patent and Trademark Office (USPTO). The publication date often precedes the grant date, but a full patent number like US-9852933 signifies an issued patent. The grant of the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium confirms its novelty, non-obviousness, and utility as determined by the patent examiner.\n\nThese dates are important milestones that mark the formal intellectual property protection of this significant advancement in substrate processing technology. The period between filing and grant allows for examination, potential revisions, and public review of the invention's scope and claims, ensuring its robust protection and public disclosure.","question":"When was Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium filed/granted?"},{"answer":"The commercial applications of the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium are primarily centered around enhancing efficiency and quality in high-precision manufacturing processes, with a strong focus on the semiconductor industry. Its ability to achieve optimized heating for the outer peripheral portion of a substrate makes it commercially valuable in several key areas:\n\n1.  **Semiconductor Fabrication:** This is the most direct and significant application. The technology can be integrated into various wafer processing tools such as spin coaters, wet benches, and annealing systems. It will lead to higher yields in the production of microprocessors, memory chips (DRAM, NAND), power devices, and specialized sensors. For chip manufacturers, this translates directly into increased profitability and reduced manufacturing costs per chip.\n2.  **Advanced Packaging:** In the realm of advanced packaging (e.g., 3D stacking, fan-out wafer-level packaging), precise thermal control is crucial for processes like bonding and stress relief. The patent's ability to minimize thermal stress and ensure uniformity will be highly beneficial for these complex packaging technologies, leading to more reliable and higher-performing packaged devices.\n3.  **Specialty Material Processing:** Industries working with delicate or high-value materials, where thermal uniformity is paramount, can leverage this technology. This includes the processing of advanced ceramics, composite materials, or specialized thin films for various applications beyond traditional silicon. The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium provides the necessary control for these sensitive processes.\n4.  **Equipment Manufacturing:** Manufacturers of semiconductor and advanced material processing equipment can incorporate this patented heating device into their product lines, offering a competitive edge and adding significant value to their offerings. This could involve selling new apparatuses or offering retrofit kits for existing equipment.\n\nUltimately, the commercial value of the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium lies in its capacity to address a pervasive and costly problem in high-tech manufacturing, leading to more efficient production, higher quality products, and accelerated innovation across a range of critical industries. Its precision and adaptability make it a versatile tool for driving commercial success in the competitive landscape of advanced material processing.","question":"What are the commercial applications of Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium?"},{"answer":"The Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium represents a foundational advancement, and its principles are likely to evolve and integrate into future technologies, leading to several exciting developments:\n\n1.  **Integration with AI and Machine Learning:** Future iterations could incorporate advanced AI/ML algorithms for predictive thermal control. These systems would learn from real-time sensor data, anticipate thermal responses, and dynamically adjust gas flow rates and heating parameters to achieve even greater uniformity and efficiency. This could lead to self-optimizing fabrication processes, minimizing human intervention and maximizing yield.\n2.  **Hyper-Localized and Dynamic Thermal Profiling:** The current patent focuses on the outer periphery, but future developments might expand this concept to allow for highly customizable and dynamic thermal profiles across the *entire* substrate. This could enable complex anisotropic processes, where different regions of a wafer require distinct temperature treatments simultaneously for novel material growth or device architecture fabrication.\n3.  **Expanded Material Compatibility and Applications:** As new materials (e.g., 2D materials, flexible substrates, advanced composites) become prevalent, the technology will likely be adapted to handle their unique thermal properties and processing requirements. This could extend its application beyond traditional silicon to areas like quantum computing substrates, advanced optics, or bio-integrated electronics, where precise thermal control is paramount.\n4.  **Enhanced Energy Efficiency and Sustainability:** Future designs of the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium will likely focus on even greater energy efficiency, perhaps through more advanced heating unit designs or optimized gas recycling systems. This aligns with the industry's push towards more sustainable manufacturing practices and reduced environmental footprint.\n5.  **Modular and Scalable Systems:** The inherent modularity of the dual-flow heating device suggests future developments will make it even more adaptable to various substrate sizes and processing equipment, allowing for easier integration and upgrades across different generations of fabrication tools.\n\nThese anticipated developments underscore the long-term impact of the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium. It is not merely a solution to a current problem but a stepping stone towards a more intelligent, precise, and versatile future for advanced material processing and semiconductor manufacturing.","question":"What are the future developments expected for Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium?"}],"topics":["substrate processing apparatus","substrate processing method","recording medium patent","US-9852933","semiconductor heating","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium - Patent US-9852933","description":"Discover the Substrate Processing Apparatus, Substrate Processing Method, and Recording Medium, optimizing wafer peripheral heating for higher yields and fewer defects. Full analysis.","keywords":["substrate processing apparatus","substrate processing method","recording medium patent","US-9852933","semiconductor heating","wafer processing","peripheral heating optimization","manufacturing yield","thermal management","microfabrication patent","advanced materials processing","defect reduction"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852933","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852933","citation_suggestion":"Patentable. \"Substrate processing apparatus, substrate processing method, and recording medium\" (US-9852933). https://patentable.app/patents/US-9852933","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852933","json":"https://patentable.app/api/llm-context/US-9852933","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:36:05.712Z"}