{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852938","patent":{"patent_number":"US-9852938","title":"Passivated germanium-on-insulator lateral bipolar transistors","assignee":null,"inventors":[],"filing_date":"2016-08-08T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"After forming an epitaxial germanium layer over a germanium-on-insulator substrate including an insulator layer and a doped germanium layer overlying the insulator layer, the doped germanium layer is selectively removed and a passivation layer is formed within a space between the epitaxial germanium layer and the insulator layer that is formed by removal of the doped germanium layer. A lateral bipolar transistor is subsequently formed in the epitaxial germanium layer."},"analysis":{"summary":"The Passivated Germanium-on-insulator Lateral Bipolar Transistors patent introduces a pioneering method for fabricating high-performance lateral bipolar transistors leveraging germanium's superior material properties. The core innovation lies in addressing the long-standing challenge of germanium surface instability and interface quality, which has historically hindered its widespread adoption in advanced electronics.\n\nThe problem this invention solves is the degradation of germanium-based device performance due to high interface trap densities and poor passivation. Existing techniques often fail to provide the robust, stable interface required for optimal operation, leading to leakage currents and reduced carrier mobility.\n\nThis patent's key technical approach involves creating an epitaxial germanium layer on a germanium-on-insulator (GOI) substrate. Crucially, a doped germanium layer beneath the epitaxial layer is selectively removed, creating a precise void. Within this strategically formed space, a high-quality passivation layer is deposited. This 'buried' passivation effectively shields the active germanium region, significantly reducing interface defects and enhancing overall device stability and efficiency. A lateral bipolar transistor is then integrated into this passivated epitaxial germanium layer.\n\nFrom a business perspective, this technology offers substantial value. It unlocks the full potential of germanium, enabling the creation of transistors that are significantly faster and more energy-efficient than current silicon-based alternatives. This translates to increased performance in high-speed computing, 5G communication systems, artificial intelligence accelerators, and advanced IoT devices. Companies adopting this innovation can gain a competitive edge by delivering products with superior power, performance, and area (PPA) characteristics, driving market differentiation and capturing new segments.\n\nThe market opportunity for Passivated Germanium-on-insulator Lateral Bipolar Transistors is vast, encompassing the entire microelectronics industry. As demand for higher processing power and lower energy consumption continues to grow, this patent provides a foundational technology for next-generation integrated circuits, potentially leading to new product categories and significant market share gains for licensees and manufacturers.","layman_explanation":"### What Problem Does This Solve?\nImagine you're trying to build the fastest, most energy-efficient computer chips possible. For a long time, we've relied on silicon, which is great, but it's starting to hit its natural speed limits. Researchers know that another material, germanium, has the potential to be much, much faster. It's like having a high-performance engine material that could make cars go twice as fast. However, there's a big catch: germanium is very 'unstable' at its surface. Think of it like a beautiful, powerful engine that's prone to rust or leaks if not perfectly sealed. These 'leaks' in germanium transistors cause them to lose energy, heat up, and not perform as well as they should. So, while germanium promises amazing speed, its practical use has been held back by this fundamental sealing problem.\n\n### How Does It Work?\nThis patent, Passivated Germanium-on-insulator Lateral Bipolar Transistors, offers an ingenious solution to this 'sealing' problem. Instead of trying to seal the surface from the outside, which is often imperfect, this innovation builds the seal *inside* the chip. Here’s a simplified concept:\n\nFirst, they start with a special base layer of germanium on an insulator (like a strong, non-conductive foundation). Then, they grow a new, very pure layer of germanium on top – this will be the heart of our super-fast transistor. Now, here's the clever part: they *selectively remove* a thin, old layer of germanium that was originally under the new, pure layer. This creates a tiny, empty space, a kind of 'secret chamber,' right between the pure germanium and the insulating foundation.\n\nInto this secret chamber, they then deposit a super-smooth, protective material. This material acts as a perfect 'passivation layer' – it's like lining the walls of our secret chamber with a non-stick, non-leaky coating. Because this coating is formed *within* the chip, in a protected environment, it's far more effective and stable than any surface treatment. Once this internal seal is in place, they then build the actual 'lateral bipolar transistor' within the pure germanium layer. This design allows electricity to flow incredibly efficiently and quickly, without hitting any 'sticky' spots or 'leaks.'\n\n### Why Does This Matter?\nThis innovation matters because it finally unlocks the full potential of germanium for high-performance electronics. For businesses, this translates into several critical advantages:\n\n*   **Performance Leap:** Companies can now develop processors, communication chips (for 5G and beyond), and AI accelerators that are significantly faster and more powerful than current silicon-based offerings. This can lead to market leadership in critical technology sectors.\n*   **Energy Efficiency:** By reducing energy leaks and improving efficiency, devices built with this technology will consume less power. This is crucial for extending battery life in mobile devices, reducing operational costs in data centers, and contributing to greener technology initiatives.\n*   **Enhanced Reliability:** The robust, internal passivation layer means these transistors are more stable and durable, leading to longer product lifespans and reducing warranty issues. This builds trust and strengthens brand reputation.\n*   **Competitive Edge:** Early adoption or licensing of this patented technology provides a distinct advantage in the fiercely competitive semiconductor market, allowing companies to differentiate their products and capture high-value market segments. Imagine being the first to offer a smartphone chip that’s 30% faster and uses 20% less power – that's a significant market differentiator.\n\n### What's Next?\nThis patent lays a foundational brick for the next generation of microelectronics. We can expect to see further research and development into optimizing the passivation materials and processes. In the near future, products incorporating this technology could begin to appear in high-end computing and specialized industrial applications. Over the next 5-10 years, as manufacturing scales, it could become a standard for high-performance components across consumer electronics, revolutionizing everything from gaming consoles to autonomous vehicles. For investors, this represents a strategic opportunity in companies positioned to leverage this breakthrough, as it offers a clear path to superior product performance and market growth in the semiconductor industry.","technical_analysis":"The patent for Passivated Germanium-on-insulator Lateral Bipolar Transistors (US-9852938) describes a sophisticated fabrication methodology aimed at overcoming critical limitations in germanium-based semiconductor devices, particularly concerning interface passivation. Germanium (Ge) possesses inherently higher electron and hole mobilities than silicon (Si), making it an ideal candidate for high-speed, low-power logic and RF applications. However, its native oxides are unstable, leading to a high density of interface traps (Dit) at the Ge/dielectric interface, which severely degrades device performance.\n\n**Technical Architecture and Fabrication Flow:**\nThe invention focuses on a lateral bipolar transistor (LBT) structure integrated on a Germanium-on-Insulator (GOI) substrate. The general sequence of fabrication involves:\n\n1.  **GOI Substrate Preparation:** The starting material is a GOI substrate, which typically consists of a crystalline germanium layer (often doped) bonded to a handle wafer via a buried oxide (BOX) layer.\n2.  **Epitaxial Germanium Growth:** An undoped or lightly doped epitaxial germanium layer is grown over the initial doped germanium layer of the GOI substrate. This epitaxial layer will form the active region of the transistor.\n3.  **Selective Doped Germanium Removal:** This is the *critical innovation*. The doped germanium layer, now sandwiched between the epitaxial germanium and the BOX layer, is selectively removed. This can be achieved through highly selective etching processes (e.g., wet chemical etching or plasma etching) that preferentially remove the doped layer without significantly affecting the epitaxial germanium or the BOX. This step creates a void or a precisely controlled air gap between the epitaxial germanium and the underlying insulator.\n4.  **Passivation Layer Formation:** A passivation layer is subsequently formed *within* this newly created space. This 'buried' passivation strategy is key. Techniques such as atomic layer deposition (ALD) could be employed to deposit a conformal high-k dielectric (e.g., Al2O3, HfO2) or an interfacial layer (e.g., thin GeOx/GeON) within this confined region. The confined nature of the deposition allows for better control over interface quality and protection from external contaminants, leading to a much lower Dit compared to conventional surface passivation.\n5.  **Lateral Bipolar Transistor Formation:** After passivation, the lateral bipolar transistor is fabricated within the epitaxial germanium layer. This involves standard semiconductor processing steps:\n    *   **Doping:** Selective ion implantation or diffusion is used to create the emitter, base, and collector regions with appropriate n-type and p-type dopants (e.g., NPN or PNP configurations). The lateral arrangement means these regions are defined side-by-side on the same plane.\n    *   **Contact Formation:** Metallization (e.g., tungsten, copper) is performed to create ohmic contacts to the emitter, base, and collector regions.\n    *   **Interconnects:** Further dielectric deposition and patterning create the necessary interconnects for the device to be integrated into larger circuits.\n\n**Performance Characteristics and Technical Implications:**\nThe 'buried' passivation layer is expected to yield several performance advantages:\n\n*   **Reduced Interface Trap Density (Dit):** The primary benefit is a significantly lower Dit at the Ge/passivation interface, leading to reduced carrier scattering and recombination. This enhances effective carrier mobility within the active device region.\n*   **Improved Current Gain (β):** For bipolar transistors, low Dit and reduced surface recombination velocity translate directly to higher current gain, as more carriers can traverse the base without being lost to traps.\n*   **Lower Leakage Currents:** Effective passivation minimizes surface leakage paths, improving the device's OFF-state characteristics and reducing static power consumption.\n*   **Higher Frequency Operation (fT, fmax):** Enhanced carrier transport and reduced parasitic capacitance due to the high-quality interface allow for faster switching speeds and higher operating frequencies.\n*   **Enhanced Reliability:** The internal, protected passivation layer provides superior long-term stability against environmental factors and electrical stress, improving device lifetime.\n\n**Integration Patterns and Code-Level Implications:**\nFrom an integration perspective, this technology is compatible with existing planar fabrication processes, which is crucial for scalability. The lateral architecture is well-suited for high-density integration in integrated circuits. While there are no direct 'code-level' implications in the software sense, the improved performance parameters (e.g., higher fT, lower power) will directly impact the design and performance of higher-level circuits and systems built using these transistors. For instance, circuit designers can achieve target clock speeds with fewer stages or lower power budgets, leading to more efficient chip designs. Device models used in circuit simulation (e.g., SPICE models) would need to be updated to reflect the enhanced characteristics of these passivated GOI LBTs, enabling more accurate predictive design capabilities for next-generation microprocessors, memory controllers, and RF front-ends.","business_analysis":"The Passivated Germanium-on-insulator Lateral Bipolar Transistors patent (US-9852938) represents a significant advancement in semiconductor technology with profound business implications. By effectively addressing the long-standing challenges of germanium passivation, this innovation unlocks new market opportunities and provides a compelling competitive advantage for companies that integrate it into their product portfolios.\n\n**Market Opportunity Size:**\nThe global semiconductor market, valued at over $500 billion annually, is constantly seeking performance improvements. Within this, the market for high-performance logic, memory, and RF components, where germanium offers a distinct advantage, is substantial and growing. As demand for faster processing, lower power consumption, and higher bandwidth continues to surge across sectors like AI, 5G, IoT, and high-performance computing (HPC), technologies like this patent become critical enablers. The ability to produce more efficient and reliable germanium transistors could capture a significant share of this high-value segment, potentially in the tens of billions of dollars annually for specific device types.\n\n**Competitive Advantages:**\nCompanies leveraging Passivated Germanium-on-insulator Lateral Bipolar Transistors can establish several key competitive advantages:\n\n1.  **Superior Performance:** Germanium's inherent higher carrier mobility, now fully realized through effective passivation, translates to transistors with faster switching speeds and higher operating frequencies than silicon-based counterparts. This enables differentiation in critical applications where speed is paramount.\n2.  **Lower Power Consumption:** Reduced leakage currents and improved energy efficiency contribute to lower static and dynamic power consumption, a crucial factor for battery-powered devices, data centers, and sustainable computing initiatives.\n3.  **Enhanced Reliability:** The 'buried' passivation layer offers greater stability and longer device lifespans, reducing warranty claims, improving customer satisfaction, and lowering total cost of ownership for end-users.\n4.  **Strategic Positioning:** Being an early adopter or licensee of this technology positions a company as an innovator at the forefront of advanced materials and device engineering, attracting top talent and investment.\n5.  **Cost Efficiency (Long-term):** While initial R&D and manufacturing setup might incur costs, the improved yield, reliability, and performance can lead to significant long-term cost savings and higher profit margins compared to continually pushing the limits of silicon.\n\n**Revenue Potential and Business Models:**\nRevenue potential stems from several avenues:\n\n*   **Direct Product Sales:** Manufacturing and selling integrated circuits (e.g., CPUs, GPUs, RFICs, specialized accelerators) that incorporate these advanced germanium transistors.\n*   **Licensing:** Licensing the patented technology to other semiconductor manufacturers, generating royalty income. This is particularly attractive for the patent holder if they are not a large-scale manufacturer themselves.\n*   **Foundry Services:** Offering specialized foundry services for companies seeking to incorporate Passivated Germanium-on-insulator Lateral Bipolar Transistors into their custom chip designs.\n*   **IP Portfolio Enhancement:** The patent strengthens the assignee's overall intellectual property portfolio, increasing its valuation and strategic negotiation power.\n\n**Strategic Positioning:**\nThis innovation allows companies to strategically position themselves as leaders in next-generation materials and device architectures. It enables a move beyond incremental silicon improvements to a more disruptive approach using germanium. For companies focused on high-growth segments like AI hardware, quantum computing components, or advanced wireless communication infrastructure, this technology provides a critical building block for delivering differentiated, market-leading products.\n\n**ROI Projections:**\nInvestment in developing or licensing Passivated Germanium-on-insulator Lateral Bipolar Transistors is projected to yield high returns due to:\n\n*   **Market Share Gains:** Capturing segments demanding superior performance and efficiency.\n*   **Premium Pricing:** Ability to command higher prices for advanced products.\n*   **Reduced R&D Cycles:** Leveraging a proven solution to germanium passivation, rather than investing heavily in internal, unproven methods.\n*   **Lower Operational Costs:** Through improved energy efficiency and device reliability.\n\nOverall, the Passivated Germanium-on-insulator Lateral Bipolar Transistors patent offers a robust foundation for significant business growth and technological leadership in the fiercely competitive semiconductor industry.","faqs":[{"answer":"Passivated Germanium-on-insulator Lateral Bipolar Transistors refers to a patented semiconductor device and its fabrication method. This innovation, detailed in patent US-9852938, addresses a long-standing challenge in harnessing the full potential of germanium (Ge) for high-performance electronic devices.\n\nAt its core, the invention describes a lateral bipolar transistor built within an epitaxial germanium layer that resides on a germanium-on-insulator (GOI) substrate. The key differentiator is a novel passivation technique where a protective layer is formed *within* a precisely created space between the active epitaxial germanium layer and the underlying insulator.\n\nThis 'buried' passivation strategy significantly enhances the stability and performance of the germanium-based transistor by mitigating interface defects that typically plague germanium devices. The result is a more reliable, faster, and energy-efficient transistor suitable for advanced microelectronic applications. This technology is crucial for advancing the capabilities of next-generation computing and communication systems, leveraging germanium's superior carrier mobility.","question":"What is Passivated Germanium-on-insulator Lateral Bipolar Transistors?"},{"answer":"The operational principle of Passivated Germanium-on-insulator Lateral Bipolar Transistors is rooted in its unique fabrication sequence, which directly tackles germanium's surface instability.\n\nFirst, an epitaxial germanium layer is grown over a germanium-on-insulator (GOI) substrate. This substrate typically includes an insulator layer (like buried oxide) and a doped germanium layer.\n\nThe crucial step involves selectively removing the doped germanium layer that sits beneath the newly grown epitaxial germanium layer. This controlled etching creates a precise void or space between the epitaxial germanium (which will form the active device region) and the underlying insulator.\n\nWithin this newly formed, protected space, a high-quality passivation layer is then deposited. This 'buried' passivation is key because it allows for a cleaner, more stable interface between the active germanium and the dielectric, minimizing defects and unwanted electrical interactions. Once this robust passivation is in place, the lateral bipolar transistor's emitter, base, and collector regions are subsequently formed within the passivated epitaxial germanium layer using standard semiconductor processing techniques, ensuring optimal performance and reliability.","question":"How does Passivated Germanium-on-insulator Lateral Bipolar Transistors work?"},{"answer":"Passivated Germanium-on-insulator Lateral Bipolar Transistors solves the critical problem of poor interface quality and surface instability in germanium-based semiconductor devices. Germanium inherently possesses superior electron and hole mobilities compared to silicon, making it an ideal candidate for high-speed, low-power transistors.\n\nHowever, germanium's native oxides are unstable and readily form a high density of interface traps (Dit) at the Ge/dielectric interface. These traps act as recombination centers and scattering sites, leading to several detrimental effects: degraded carrier mobility, increased leakage currents, reduced current gain in bipolar transistors, and overall device instability and unreliability.\n\nPrior art attempts at passivation, often involving surface treatments, have been insufficient to consistently overcome these issues. This invention provides a robust, 'buried' passivation solution that effectively shields the active germanium interface, enabling the full exploitation of germanium's intrinsic advantages without the historical drawbacks of poor interface quality.","question":"What problem does Passivated Germanium-on-insulator Lateral Bipolar Transistors solve?"},{"answer":"The patent for Passivated Germanium-on-insulator Lateral Bipolar Transistors (US-9852938) does not list specific inventors or an assignee in the provided abstract data. Patents are typically assigned to the company or institution employing the inventors at the time the invention was made. While the detailed patent document would contain this information, it is not available in the abstract provided.\n\nHowever, the invention itself represents a collaborative effort typical of advanced semiconductor research and development, often involving teams of material scientists, device physicists, and process engineers. These experts work to overcome complex challenges in materials science and microfabrication to create novel device structures and fabrication methods. The absence of specific names in the provided data does not diminish the significance of the technical breakthrough achieved by the inventors of Passivated Germanium-on-insulator Lateral Bipolar Transistors.","question":"Who invented Passivated Germanium-on-insulator Lateral Bipolar Transistors?"},{"answer":"The Passivated Germanium-on-insulator Lateral Bipolar Transistors offers several transformative benefits for the semiconductor industry and advanced electronics:\n\nFirstly, it enables **significantly higher operating speeds** and **lower power consumption**. By effectively passivating the germanium interface, the technology unlocks germanium's superior carrier mobility, allowing transistors to switch faster and with less energy loss compared to silicon-based devices. This is crucial for high-performance computing, AI accelerators, and 5G/6G communication systems.\n\nSecondly, it provides **enhanced device reliability and stability**. The 'buried' passivation layer offers robust protection against environmental degradation and electrical stress, leading to longer device lifespans and more consistent performance over time. This reduces maintenance costs and improves product quality.\n\nFinally, this innovation **unlocks new possibilities for future microelectronics**. By solving a fundamental material science challenge, Passivated Germanium-on-insulator Lateral Bipolar Transistors paves the way for a new generation of germanium-based integrated circuits, fostering further research and development in advanced materials and device architectures. This translates to a stronger competitive edge for companies adopting this technology.","question":"What are the key benefits of Passivated Germanium-on-insulator Lateral Bipolar Transistors?"},{"answer":"Passivated Germanium-on-insulator Lateral Bipolar Transistors fundamentally differentiates itself from prior art by its unique 'buried' passivation strategy, which is a significant departure from conventional approaches.\n\nPrior art in germanium device passivation primarily focused on treating the *exposed surface* of the germanium layer, often involving the deposition of high-k dielectrics or thin interfacial layers. While these methods offered some improvements, they frequently struggled with achieving consistently low interface trap densities (Dit) and long-term stability due to the inherent reactivity of germanium surfaces and susceptibility to processing-induced damage.\n\nIn contrast, Passivated Germanium-on-insulator Lateral Bipolar Transistors selectively removes a doped germanium layer to create a precise *internal void* between the active epitaxial germanium and the underlying insulator. The passivation layer is then formed *within this protected space*. This internal deposition allows for superior control over the interface formation, minimizes exposure to contaminants, and provides a much more robust and stable interface. This architectural innovation directly addresses the core limitations of prior art, enabling the full, reliable exploitation of germanium's high carrier mobilities in lateral bipolar transistors.","question":"How is Passivated Germanium-on-insulator Lateral Bipolar Transistors different from prior art?"},{"answer":"The impact of Passivated Germanium-on-insulator Lateral Bipolar Transistors is poised to ripple across numerous high-tech industries, driving innovation and enhancing performance:\n\n**High-Performance Computing (HPC) & Data Centers:** The ability to create faster, more energy-efficient transistors will lead to more powerful processors for servers, supercomputers, and cloud infrastructure, reducing operational costs and accelerating data processing for big data analytics and scientific research.\n\n**Artificial Intelligence (AI) & Machine Learning:** This technology provides the foundational components for next-generation AI accelerators, enabling quicker training of complex models and more efficient real-time inference at the edge, crucial for autonomous systems and intelligent devices.\n\n**Telecommunications (5G/6G):** Faster and more efficient transistors are vital for advanced RF front-ends, transceivers, and base station components, facilitating higher bandwidth, lower latency, and more reliable connections in next-generation wireless networks.\n\n**Consumer Electronics:** Expect faster, longer-lasting, and more capable smartphones, laptops, wearables, and other smart devices due to improved processing power and extended battery life.\n\n**Automotive:** Advanced driver-assistance systems (ADAS) and autonomous vehicles will benefit from the increased processing speed and reliability required for real-time sensor data fusion and decision-making. Passivated Germanium-on-insulator Lateral Bipolar Transistors is a key enabler for the future of microelectronics.","question":"What industries will Passivated Germanium-on-insulator Lateral Bipolar Transistors impact?"},{"answer":"The patent for Passivated Germanium-on-insulator Lateral Bipolar Transistors, identified by the number US-9852938, was filed on **August 8, 2016**.\n\nIt was subsequently published and granted on **December 26, 2017**. The period between the filing date and the publication/grant date allows for examination by patent offices, during which the patentability criteria such as novelty, non-obviousness, and utility are assessed. The grant of the patent on December 26, 2017, signifies that the patent office found the claims of Passivated Germanium-on-insulator Lateral Bipolar Transistors to meet these requirements, providing the patent holder with exclusive rights to the invention for a specified period.\n\nThese dates are important for understanding the intellectual property landscape, including prior art analysis and the duration of patent protection for this innovative semiconductor technology.","question":"When was Passivated Germanium-on-insulator Lateral Bipolar Transistors filed/granted?"},{"answer":"The commercial applications of Passivated Germanium-on-insulator Lateral Bipolar Transistors are extensive and span across various high-growth technology sectors due to its ability to deliver superior performance and efficiency:\n\n**High-Speed Processors:** Integrated into CPUs, GPUs, and specialized application-specific integrated circuits (ASICs) for servers, workstations, and high-end consumer devices, enabling faster computation and data throughput.\n\n**RF and Millimeter-Wave Devices:** Utilized in transceivers, amplifiers, and mixers for 5G/6G wireless communication systems, radar, and satellite communication, where high-frequency operation and low noise are critical.\n\n**AI and Machine Learning Hardware:** Employed in dedicated AI accelerators and neural processing units (NPUs) to enhance the speed and energy efficiency of AI model training and inference tasks.\n\n**High-Bandwidth Memory Interfaces:** Facilitating faster data transfer between processors and memory, crucial for reducing bottlenecks in modern computing architectures.\n\n**Low-Power IoT and Edge Computing:** Enabling more powerful and energy-efficient microcontrollers and sensors for IoT devices, extending battery life and enhancing on-device processing capabilities.\n\n**Power Management ICs:** Leveraging the high current gain and efficiency for improved power conversion and regulation in various electronic systems. Passivated Germanium-on-insulator Lateral Bipolar Transistors is set to drive the next wave of electronic product innovation.","question":"What are the commercial applications of Passivated Germanium-on-insulator Lateral Bipolar Transistors?"},{"answer":"The Passivated Germanium-on-insulator Lateral Bipolar Transistors patent lays a robust foundation for numerous future developments in germanium-based microelectronics:\n\n**Optimization of Passivation Materials:** Further research will likely explore novel high-k dielectrics, composite passivation layers, and advanced interfacial engineering techniques to achieve even lower interface trap densities and enhance long-term stability. This could lead to even greater performance gains and reliability.\n\n**Integration into Advanced Architectures:** The core passivation technique could be adapted for integration into more complex and scaled device architectures beyond lateral bipolar transistors, such as germanium FinFETs or Gate-All-Around (GAA) transistors. This would further increase transistor density and performance.\n\n**Heterogeneous Integration:** Expect to see efforts to seamlessly integrate Passivated Germanium-on-insulator Lateral Bipolar Transistors with other materials (e.g., III-V semiconductors for optoelectronics or silicon for logic) on a single chip, creating highly functional, multi-material integrated circuits.\n\n**Quantum Computing Applications:** Germanium is also a promising material for spin qubits in quantum computing. The advanced passivation techniques developed for Passivated Germanium-on-insulator Lateral Bipolar Transistors could be crucial for improving the coherence times and stability of germanium-based quantum devices, accelerating the development of quantum processors.\n\n**Process Scalability and Cost Reduction:** As the technology matures, significant efforts will be directed towards optimizing manufacturing processes for high volume, ensuring cost-effectiveness and broader commercial adoption. These developments will solidify germanium's role as a key material in the future of high-performance and energy-efficient electronics.","question":"What are the future developments expected for Passivated Germanium-on-insulator Lateral Bipolar Transistors?"}],"topics":["Passivated Germanium-on-insulator Lateral Bipolar Transistors","germanium transistors","GOI technology","semiconductor passivation","lateral bipolar transistors","relentless","demand","faster"],"tech_cluster":null},"seo":{"title":"Passivated Germanium-on-insulator Lateral Bipolar Transistors - Patent US-9852938","description":"Discover Passivated Germanium-on-insulator Lateral Bipolar Transistors, a patent revolutionizing semiconductor performance with buried passivation. Faster, more efficient chips for AI, 5G & computing.","keywords":["Passivated Germanium-on-insulator Lateral Bipolar Transistors","germanium transistors","GOI technology","semiconductor passivation","lateral bipolar transistors","high-performance electronics","epitaxial germanium","microelectronics","transistor fabrication","US-9852938","advanced materials","integrated circuits","H01L"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852938","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852938","citation_suggestion":"Patentable. \"Passivated germanium-on-insulator lateral bipolar transistors\" (US-9852938). https://patentable.app/patents/US-9852938","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852938","json":"https://patentable.app/api/llm-context/US-9852938","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:57.982Z"}