{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852942","patent":{"patent_number":"US-9852942","title":"Semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-07-05T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, and a plurality of columnar parts. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode films stacked separately from each other. The plurality of columnar parts is provided in the stacked body. Each of the plurality of columnar parts includes a semiconductor pillar extending in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor pillar and the stacked body. The plurality of electrode films includes a first electrode film provided in upper layers of the stacked body and a second electrode film provided in lower layers of the stacked body. A thickness of the first electrode film is thicker than a thickness of the second electrode film. The first electrode film is provided with a void."},"analysis":{"summary":"The patent titled \"Semiconductor Memory Device and Method for Manufacturing the Same\" (US-9852942) introduces a significant advancement in semiconductor memory architecture, particularly relevant for high-density, stacked memory devices like 3D NAND flash. The core innovation lies in a novel design for a semiconductor memory device that addresses critical challenges in scaling, reliability, and manufacturing efficiency.\n\nThe primary problem this invention solves is the inherent difficulty in increasing memory density within three-dimensional stacked structures without compromising performance or structural integrity. As more layers are stacked, issues such as managing electrical interference, mechanical stress, and consistent charge retention become exponentially complex. Existing solutions often face trade-offs between density, speed, and endurance.\n\nThe key technical approach involves a semiconductor memory device built on a substrate, featuring a stacked body of multiple electrode films and numerous columnar parts. Each columnar part includes a semiconductor pillar and a charge storage film. The breakthrough is the strategic differentiation in the thickness of the electrode films: a first electrode film in the upper layers is designed to be thicker than a second electrode film in the lower layers. Crucially, the thicker first electrode film also incorporates a void. This unique structural configuration optimizes electrical characteristics, potentially reduces parasitic capacitance, mitigates mechanical stress, and can streamline certain manufacturing processes.\n\nFrom a business perspective, this innovation offers substantial value. It enables the creation of memory devices with significantly higher storage capacities and improved reliability, directly impacting markets for solid-state drives (SSDs), mobile devices, and data center infrastructure. Manufacturers adopting this technology can achieve higher yields, reduce costs through optimized fabrication, and gain a competitive advantage by offering superior products. The market opportunity is vast, driven by the ever-growing demand for data storage across all sectors.\n\nThis technology positions itself to be a cornerstone for next-generation memory products, facilitating the continued scaling of 3D NAND and other stacked memory technologies. Its focus on structural optimization provides a robust foundation for future memory advancements, promising enhanced performance and efficiency for the digital world.","layman_explanation":"### What Problem Does This Solve?\n\nIn today's digital world, we constantly demand more from our devices: faster performance, more storage, and longer battery life. A key component enabling this is semiconductor memory, particularly the kind used in solid-state drives (SSDs) and smartphone storage, known as 3D NAND flash. The challenge for manufacturers is how to pack more and more data into tiny spaces. The current solution involves stacking memory layers vertically, like a miniature high-rise building. However, as these 'buildings' get taller, they face significant engineering hurdles. They can become structurally unstable, electrical signals can interfere with each other (like noisy neighbors), and it gets harder to manufacture them reliably at scale. This patent, \"Semiconductor Memory Device and Method for Manufacturing the Same,\" directly addresses these fundamental problems, aiming to make these memory skyscrapers taller, stronger, and more efficient.\n\n### How Does It Work?\n\nImagine a memory chip as a miniature city grid. This innovation focuses on how the 'buildings' (memory cells) are constructed. The patent describes a device built on a base (substrate) with many layers of 'floors' (electrode films) stacked on top of each other. Running vertically through these floors are 'pillars' (semiconductor pillars) that hold the actual data, surrounded by a 'data storage wall' (charge storage film). The genius of this invention lies in two key design choices for these 'floors':\n\nFirstly, the 'floors' in the upper parts of the memory stack are made thicker than the 'floors' in the lower parts. Think of it like a skyscraper that has stronger, wider beams at the top. This isn't just for strength; it helps electrical signals flow better and faster through the upper layers. Secondly, and very cleverly, these thicker upper 'floors' also have small, empty spaces or 'voids' built into them. These voids are like tiny air pockets or structural gaps. They can serve multiple purposes: they might reduce electrical interference between adjacent 'floors,' act as shock absorbers to relieve stress within the structure (which is crucial during manufacturing and operation), or even make it easier to precisely carve out the intricate patterns during the manufacturing process. It's a subtle but powerful change in the fundamental architecture of the memory chip.\n\n### Why Does This Matter?\n\nThis technology matters because it directly translates into tangible benefits for businesses and consumers alike. For consumers, it means future devices will have even higher storage capacities without getting bigger, faster performance for demanding applications, and potentially longer-lasting products due to enhanced reliability. For businesses, particularly in areas like cloud computing, artificial intelligence, and big data, this innovation allows for the creation of more powerful and cost-effective data centers. Companies can build servers with denser, faster, and more reliable SSDs, leading to improved operational efficiency and reduced infrastructure costs. It provides a significant competitive advantage for memory manufacturers who adopt it, allowing them to lead the market with next-generation products that offer superior performance and value. This innovation helps solve a critical bottleneck in the digital economy, enabling the continued growth of data-intensive applications.\n\n### What's Next?\n\nThe principles introduced by this patent lay a robust foundation for the future of memory technology. We can expect to see further advancements building upon this concept of differentiated layer engineering and integrated voids. This could lead to even higher-stack 3D NAND devices, new material innovations for these structures, and potentially more energy-efficient memory solutions. For investors, this signals a promising area for continued growth and innovation in the semiconductor sector. It's a technology that will enable the next wave of digital transformation, from smarter AI to more expansive cloud services, driving market adoption and strategic investments in advanced memory solutions.","technical_analysis":"The patent \"Semiconductor Memory Device and Method for Manufacturing the Same\" (US-9852942) details a novel architecture for semiconductor memory devices, primarily targeting the challenges inherent in scaling 3D stacked memory technologies such as 3D NAND flash. The technical innovation resides in the specific design of the stacked body and its constituent electrode films, offering a sophisticated approach to enhancing device performance, reliability, and manufacturability.\n\n**Technical Architecture:** The device comprises a substrate upon which a stacked body is formed. This stacked body is composed of a plurality of electrode films, precisely separated from each other. Embedded within this stacked body are numerous columnar parts, each designed to function as a memory cell. Each columnar part consists of a semiconductor pillar, which extends vertically through the stacked layers, and a charge storage film concentrically positioned between the semiconductor pillar and the surrounding electrode films. This basic vertical integration is common in 3D memory, but the patent introduces a critical differentiation.\n\n**Key Technical Innovations:** The central innovation lies in the varying thickness of the electrode films and the strategic inclusion of voids. Specifically, the patent dictates that a first electrode film, situated in the upper layers of the stacked body, is thicker than a second electrode film located in the lower layers. Furthermore, this thicker first electrode film is intentionally provided with a void. This structural modification has several profound technical implications:\n\n1.  **Optimized Electrical Characteristics:** Varying electrode thickness can be engineered to manage resistance and capacitance more effectively across the entire stack. Thicker upper electrodes may offer lower series resistance, which is crucial for faster signal propagation and reduced RC delay in high-frequency operations. Conversely, thinner lower electrodes might facilitate tighter packing or optimized electric field distribution for charge storage elements.\n2.  **Parasitic Capacitance Reduction:** The void within the thicker upper electrode film is a critical feature. By creating an air gap (or a region with a lower dielectric constant material), this void can significantly reduce parasitic capacitance between adjacent word lines or between the word line and other device structures. Lower parasitic capacitance leads to faster switching speeds, reduced power consumption, and improved signal integrity, especially vital in densely packed 3D architectures.\n3.  **Mechanical Stress Mitigation:** In multi-layered 3D structures, differential thermal expansion and material deposition stresses can lead to structural defects or reliability issues. The strategically placed void can act as a stress-relief mechanism, absorbing or redistributing mechanical stresses within the thicker upper electrode layers, thereby enhancing the overall structural integrity and long-term reliability of the device.\n4.  **Enhanced Manufacturing Process:** The method for manufacturing such a device would likely involve advanced deposition (e.g., ALD, CVD) and highly selective etching techniques. The incorporation of voids could potentially simplify certain etching steps by providing sacrificial layers or allowing for more precise control over aspect ratios and feature dimensions during fabrication. This could lead to higher yields and reduced manufacturing complexity for very high-stack memory devices.\n\n**Implementation Details:** The semiconductor pillar typically consists of materials like polysilicon, while the charge storage film could be a charge trap layer (e.g., SiN in a SONOS-like structure) or a floating gate. The electrode films are generally conductive materials such as doped polysilicon or various metals (e.g., tungsten). The precise control over film thickness and void formation requires cutting-edge lithography, deposition, and etching technologies capable of atomic-level precision. Integration patterns would focus on ensuring uniform contact resistance and minimizing defects across the vast number of columnar parts.\n\n**Performance Characteristics:** Devices built upon this architecture are expected to exhibit superior performance characteristics compared to prior art. This includes higher data storage density due to improved vertical scaling capabilities, enhanced endurance through better stress management, and faster read/write operations owing to optimized electrical pathways and reduced parasitic effects. The overall reliability of the memory device is also expected to improve, leading to longer operational lifespans.\n\n**Code-Level Implications (Analogous):** While this patent deals with hardware, the 'code-level implications' can be thought of in terms of the design rules and simulation models. Engineers would need to develop new simulation models that accurately account for the varying electrode thicknesses and the presence of voids to predict device behavior, optimize layouts, and refine manufacturing processes. This would involve advanced TCAD (Technology Computer-Aided Design) tools capable of simulating complex 3D structures with heterogeneous material properties and geometries.\n\nIn essence, this technology provides a robust framework for overcoming some of the most persistent physical and electrical challenges in advanced 3D memory design, paving the way for next-generation non-volatile memory solutions.","business_analysis":"The patent titled \"Semiconductor Memory Device and Method for Manufacturing the Same\" (US-9852942) introduces a significant innovation in semiconductor memory architecture, presenting compelling business opportunities and competitive advantages within the rapidly expanding global memory market. This technology directly addresses the critical need for higher density, improved reliability, and enhanced performance in memory devices, particularly 3D NAND flash.\n\n**Market Opportunity Size:** The global NAND flash market alone is projected to reach hundreds of billions of dollars in the coming years, driven by the exponential growth of data generated by AI, IoT, cloud computing, and mobile devices. This invention, by enabling more efficient and reliable 3D stacking, positions itself at the forefront of this market. Any improvement in density, speed, or endurance translates directly into increased market share and profitability for memory manufacturers. The ability to produce higher-capacity SSDs, more powerful embedded memory for smartphones, and robust storage for enterprise data centers taps into a multi-trillion-dollar digital economy.\n\n**Competitive Advantages:** This technology offers several key competitive advantages:\n\n1.  **Density Leadership:** By optimizing the stacked body with differentiated electrode thicknesses and voids, the invention can achieve higher vertical integration and thus greater storage density per unit area. This allows manufacturers to offer leading-edge products with superior capacities.\n2.  **Performance Edge:** Reduced parasitic capacitance and optimized electrical pathways due to the unique electrode design can lead to faster read/write speeds and lower power consumption, differentiating products in performance-critical applications.\n3.  **Enhanced Reliability and Endurance:** Mitigation of mechanical stress and improved electrical stability contribute to longer device lifespans and better data retention, a crucial factor for enterprise and mission-critical applications.\n4.  **Manufacturing Efficiency:** The method described potentially simplifies complex etching processes or improves yield rates for high-stack architectures, leading to lower manufacturing costs and faster time-to-market.\n\n**Revenue Potential:** Companies leveraging this patented technology can command premium pricing for high-capacity, high-performance memory products. The improved manufacturing efficiency could also lead to higher margins. The invention's applicability spans consumer electronics, enterprise storage, automotive, and industrial sectors, ensuring diverse revenue streams. Licensing opportunities for the technology could also generate significant income from other memory manufacturers.\n\n**Business Models:** This innovation supports various business models:\n\n1.  **Integrated Device Manufacturers (IDMs):** Companies like Samsung, SK Hynix, and Micron, which design and manufacture their own memory, can integrate this technology into their product roadmaps to maintain leadership in 3D NAND.\n2.  **Foundries:** Specialized foundries could offer fabrication services utilizing this method, attracting clients seeking advanced memory solutions.\n3.  **Licensing:** The patent holder could license the technology to other manufacturers, generating royalties and accelerating industry-wide adoption.\n4.  **Product Differentiation:** Companies can use this technology to create specialized memory products tailored for specific high-value markets (e.g., AI accelerators, high-performance computing).\n\n**Strategic Positioning:** This patent strategically positions the assignee (or licensees) as an innovator in advanced semiconductor memory. It reinforces a forward-looking R&D strategy focused on overcoming fundamental physical limits. In an industry where technological leadership is paramount, this invention provides a strong foundation for future product generations and market dominance. It aligns with the industry trend of 'more than Moore' scaling, emphasizing architectural innovation over traditional lithographic shrinks.\n\n**ROI Projections:** While specific ROI depends on implementation, the potential for increased market share, premium pricing, and reduced manufacturing costs suggests a very strong return on investment. The ability to deliver next-generation memory solutions faster and more reliably directly translates into significant financial gains, securing long-term competitive advantage in a critical technology sector. The investment in R&D for such patents is justified by the immense value created through improved product capabilities and market positioning.","faqs":[{"answer":"The patent \"Semiconductor Memory Device and Method for Manufacturing the Same\" (US-9852942) describes a groundbreaking innovation in the field of semiconductor memory. Essentially, it details a novel design for memory devices, particularly those that use a stacked, three-dimensional (3D) architecture, like 3D NAND flash memory. This invention introduces a unique configuration of electrode films and columnar parts within a stacked body, aiming to significantly enhance memory density, performance, and reliability.\n\nAt its core, the device includes a substrate, a stacked body comprising multiple electrode films, and numerous columnar parts that house the actual memory cells. A key aspect is the differentiation in the thickness of these electrode films: upper layers feature a thicker electrode film compared to lower layers. Moreover, these thicker upper electrode films are specifically designed with integrated voids.\n\nThis architectural approach represents a sophisticated engineering solution to the challenges faced in scaling modern memory technologies. By intelligently structuring the internal components, this technology seeks to optimize electrical characteristics, mitigate mechanical stress, and streamline manufacturing processes for high-capacity memory devices. It's a foundational patent for next-generation memory solutions.\n\nKeywords: semiconductor memory, 3D NAND, stacked memory, electrode films, columnar parts, memory architecture, US-9852942.","question":"What is Semiconductor Memory Device and Method for Manufacturing the Same?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same works by implementing a clever structural design within a multi-layered memory stack. The device is built on a substrate, with a 'stacked body' consisting of many 'electrode films' (which act like control lines or word lines) layered on top of each other. Running vertically through these layers are 'columnar parts,' each containing a 'semiconductor pillar' (the core of the memory cell) and a 'charge storage film' (where data bits are actually stored) wrapped around the pillar.\n\nThe key to this invention's functionality lies in two main features: Firstly, the electrode films in the upper layers of the stack are made thicker than those in the lower layers. This varying thickness helps optimize the electrical signals that pass through the memory, potentially reducing resistance and improving speed in the upper, longer pathways. Secondly, and critically, these thicker upper electrode films contain strategically placed 'voids' (empty spaces). These voids can act as air gaps, which significantly reduce unwanted electrical interference (parasitic capacitance) between adjacent layers, leading to faster operation and lower power consumption. They can also help relieve mechanical stress within the delicate stacked structure, making the device more robust and reliable.\n\nBy combining these differentiated thicknesses and integrated voids, this technology creates a more stable, electrically efficient, and physically resilient memory device. This allows for greater data density, improved performance, and enhanced durability compared to conventional memory designs.\n\nKeywords: semiconductor device operation, 3D NAND functionality, electrode film mechanism, void technology, charge storage, memory performance, structural integrity.","question":"How does Semiconductor Memory Device and Method for Manufacturing the Same work?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same patent primarily solves several critical problems associated with scaling high-density, three-dimensional (3D) semiconductor memory devices, such as 3D NAND flash. As memory manufacturers strive to pack more data into smaller spaces, they build 'memory skyscrapers' by stacking hundreds of layers.\n\nOne major problem is **electrical interference and performance degradation**. In tall, dense stacks, electrical signals from adjacent layers can interfere with each other (known as parasitic capacitance), slowing down operations and increasing power consumption. This invention addresses this by using voids in the thicker upper electrodes to create air gaps, effectively reducing this interference.\n\nAnother significant issue is **mechanical stress and reliability**. Stacking many different materials, each with unique properties, creates immense internal stress within the memory device, especially during manufacturing and thermal cycling. This stress can lead to physical defects, wafer warpage, and reduced device lifespan. The strategically placed voids in the thicker upper electrodes act as stress-relief mechanisms, enhancing the overall structural integrity and reliability.\n\nFurthermore, the patent aims to improve **manufacturing efficiency and scalability**. Traditional uniform layering can present challenges for precise etching and material deposition. The differentiated electrode thicknesses and voids offer a more robust design that can potentially simplify certain complex fabrication steps, leading to higher yields and more cost-effective production of next-generation, ultra-high-density memory. Thus, this innovation tackles fundamental roadblocks in advanced memory development.\n\nKeywords: memory scaling problems, 3D NAND challenges, parasitic capacitance, mechanical stress, memory reliability issues, manufacturing complexity, high-density memory.","question":"What problem does Semiconductor Memory Device and Method for Manufacturing the Same solve?"},{"answer":"The patent \"Semiconductor Memory Device and Method for Manufacturing the Same\" (US-9852942) was filed on July 5, 2016, and published on December 26, 2017. The inventors associated with this groundbreaking technology are not specified in the provided patent data.\n\nTypically, patents are filed by individuals (inventors) and then assigned to a company or organization. In the semiconductor industry, a patent of this nature, describing a fundamental architectural improvement in memory devices, would usually originate from the research and development departments of major semiconductor manufacturers or specialized memory companies. These entities invest heavily in R&D to push the boundaries of memory technology.\n\nWhile the specific inventors remain undisclosed in this context, the innovation reflects the collective effort and expertise within a leading technology firm committed to advancing semiconductor memory. The assignee, also not provided, would be the entity that owns the rights to this patent and stands to commercialize the technology. Such an invention would be crucial for maintaining a competitive edge in the high-stakes global memory market.\n\nKeywords: patent inventors, US-9852942, semiconductor industry, memory patent ownership, R&D, patent assignee, technology development.","question":"Who invented Semiconductor Memory Device and Method for Manufacturing the Same?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same offers several significant benefits that are poised to impact the entire data storage ecosystem.\n\nFirstly, it enables **higher memory density**. By creating a more robust and electrically efficient stacked architecture, this invention allows for the construction of even taller 3D memory stacks. This means more data can be packed into the same physical space, leading to higher-capacity solid-state drives (SSDs) and embedded memory solutions for devices like smartphones and tablets.\n\nSecondly, it delivers **enhanced performance**. The differentiated electrode film thicknesses and the strategic inclusion of voids work together to optimize electrical characteristics. This can lead to reduced parasitic capacitance and lower resistance, resulting in faster read/write speeds and lower power consumption. For users, this means quicker loading times, smoother multitasking, and more energy-efficient devices.\n\nThirdly, the technology provides **improved reliability and endurance**. The voids act as stress-relief mechanisms, mitigating mechanical stresses within the multi-layered structure. This structural resilience helps prevent defects and extends the operational lifespan of the memory device, making it more dependable for both consumer and enterprise applications. Finally, the novel design can also lead to **more efficient manufacturing processes**, potentially increasing yields and reducing production costs for advanced memory chips. These benefits collectively position the Semiconductor Memory Device and Method for Manufacturing the Same as a cornerstone for next-generation memory products.\n\nKeywords: memory density benefits, enhanced performance, improved reliability, manufacturing efficiency, 3D NAND advantages, semiconductor innovation, data storage benefits.","question":"What are the key benefits of Semiconductor Memory Device and Method for Manufacturing the Same?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same distinguishes itself from prior art by introducing fundamental architectural changes to 3D stacked memory devices. In conventional 3D NAND and similar prior art designs, memory cells are stacked with electrode films that typically have a uniform thickness across all layers. While effective for initial scaling, this uniformity presents limitations as stack heights increase.\n\nThis invention deviates significantly by proposing two key differentiators: First, it specifies that the **electrode films in the upper layers of the stacked body are thicker than those in the lower layers**. Prior art generally did not strategically vary electrode thickness in this manner. This differentiation allows for localized optimization of electrical properties, such as reducing resistance in upper pathways, which is a novel approach to managing signal integrity in tall stacks. Second, and crucially, the **thicker upper electrode films are designed with integrated voids**. Prior art typically uses solid dielectric layers or uniform conductive films without intentionally incorporating such voids within the electrode structure itself. These voids are not accidental; they are engineered features that uniquely reduce parasitic capacitance and mitigate mechanical stress, which are persistent challenges in uniform stack designs.\n\nBy moving beyond uniform layering and introducing these intelligent structural modifications, the Semiconductor Memory Device and Method for Manufacturing the Same offers a superior approach to managing electrical interference, mechanical stress, and manufacturing complexity. This results in a memory device that can achieve higher density, better performance, and enhanced reliability compared to previous generations of 3D stacked memory technologies.\n\nKeywords: prior art comparison, memory technology differentiation, 3D NAND innovation, electrode film design, void integration, semiconductor architecture, competitive advantage.","question":"How is Semiconductor Memory Device and Method for Manufacturing the Same different from prior art?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same patent is set to have a profound impact across numerous industries that rely heavily on advanced digital storage and processing capabilities.\n\nFirstly, the **Consumer Electronics** industry will see direct benefits. Devices like smartphones, tablets, laptops, and gaming consoles will be able to offer significantly higher storage capacities, faster application loading times, and improved overall performance due to the denser and more efficient memory chips enabled by this technology. This translates to a better user experience and opens doors for more sophisticated on-device functionalities.\n\nSecondly, the **Enterprise and Cloud Computing** sectors will experience transformative changes. Data centers, which are the backbone of the internet and cloud services, constantly require more robust, higher-density, and more reliable solid-state drives (SSDs). This innovation can provide the infrastructure needed to handle the exponential growth of data generated by AI, big data analytics, and IoT, leading to more efficient and cost-effective cloud services and enterprise storage solutions.\n\nThirdly, the **Automotive** industry, particularly in the realm of autonomous vehicles and advanced driver-assistance systems (ADAS), will benefit immensely. These applications demand high-performance, ultra-reliable memory for real-time sensor data processing, navigation, and infotainment systems. The enhanced reliability and endurance offered by this technology are critical for safety-sensitive automotive applications. Finally, **Industrial IoT (IIoT)** and **High-Performance Computing (HPC)** will also see significant advancements, leveraging the improved density and performance for edge computing, industrial automation, and scientific research. The Semiconductor Memory Device and Method for Manufacturing the Same is truly a foundational technology with widespread industry implications.\n\nKeywords: industry impact, consumer electronics, cloud computing, enterprise storage, automotive industry, IoT, AI, high-performance computing, data centers.","question":"What industries will Semiconductor Memory Device and Method for Manufacturing the Same impact?"},{"answer":"The patent for \"Semiconductor Memory Device and Method for Manufacturing the Same\" was officially filed on **July 5, 2016**. This date marks the point at which the patent application was submitted to the patent office, initiating the examination process.\n\nFollowing the examination period, during which the patent office reviews the claims for novelty, non-obviousness, and utility, the patent was subsequently published. The **publication date** for this patent is **December 26, 2017**. This is when the patent document became publicly available, disclosing the details of the invention to the world.\n\nIt's important to note that the publication date is distinct from the grant date, though for US patents, the publication often coincides with or precedes the grant. The grant date, if different, would indicate when the patent rights were formally conferred to the assignee. In any case, the 2016 filing date places this invention squarely within the period of intense development for advanced 3D NAND technologies, highlighting its relevance to ongoing industry efforts to push memory density and performance boundaries. The relatively quick publication further underscores the perceived importance and readiness of this innovation.\n\nKeywords: patent filing date, patent publication date, US-9852942, patent timeline, semiconductor memory patent, intellectual property.","question":"When was Semiconductor Memory Device and Method for Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Semiconductor Memory Device and Method for Manufacturing the Same are vast and impactful, primarily centered around high-density, high-performance, and highly reliable non-volatile memory solutions. This technology directly enhances 3D NAND flash memory, which is a cornerstone of modern digital storage.\n\nOne primary application is in **Solid-State Drives (SSDs)**. By enabling denser memory stacks with improved reliability, this innovation can lead to SSDs with significantly higher capacities, faster read/write speeds, and longer lifespans. This benefits both consumer-grade SSDs for personal computers and enterprise-grade SSDs for data centers, cloud storage, and servers, where performance and durability are paramount.\n\nAnother major application is in **mobile devices and embedded systems**. Smartphones, tablets, and other portable electronics can leverage this technology to offer larger internal storage capacities without increasing device size, alongside improved responsiveness and battery life due to more efficient memory operations. This is crucial for supporting increasingly complex mobile applications and rich media content.\n\nFurthermore, the enhanced reliability and performance make it ideal for **automotive electronics**, particularly in advanced driver-assistance systems (ADAS) and autonomous driving platforms, which require robust memory for critical functions. The technology also finds application in **Industrial IoT (IIoT)** devices, where durability and consistent performance in harsh environments are essential. Ultimately, the Semiconductor Memory Device and Method for Manufacturing the Same underpins the next generation of data storage across virtually all computing platforms, driving value through superior product offerings.\n\nKeywords: commercial applications, SSDs, mobile devices, embedded systems, automotive electronics, Industrial IoT, high-density memory, non-volatile memory, 3D NAND applications.","question":"What are the commercial applications of Semiconductor Memory Device and Method for Manufacturing the Same?"},{"answer":"The Semiconductor Memory Device and Method for Manufacturing the Same patent lays a robust foundation for exciting future developments in semiconductor memory technology. Building upon its core principles of differentiated electrode thicknesses and integrated voids, several advancements can be anticipated.\n\nFirstly, we can expect **even higher layer counts and greater density**. The stress-mitigating and electrical optimization features of this design inherently allow for scaling to more extreme vertical stacks. Future iterations might explore dynamic or adaptive void sizes and placements, or even more complex thickness variations across the stack, to push bit density limits further while maintaining stability.\n\nSecondly, there will likely be **integration with novel materials**. Researchers may investigate new low-k dielectric materials to fill the voids for even greater parasitic capacitance reduction, or explore alternative conductive materials for the electrodes that can be precisely deposited and etched to form these intricate structures. This could lead to memory devices with even better performance characteristics and lower power consumption.\n\nThirdly, the technology could facilitate **hybrid memory architectures**. The robust nature of this stacked design might enable the integration of different memory types (e.g., DRAM, MRAM, or ReRAM) within the same 3D structure, leading to highly specialized and efficient memory solutions. Finally, advancements in **manufacturing processes** will continue to evolve alongside this architecture. Expect developments in advanced lithography, selective etching techniques, and self-aligned fabrication methods that can more efficiently and reliably produce these complex, non-uniform memory stacks. The Semiconductor Memory Device and Method for Manufacturing the Same represents a strategic blueprint for the long-term evolution of high-performance, high-density memory.\n\nKeywords: future memory developments, 3D NAND roadmap, novel materials memory, hybrid memory, advanced manufacturing, memory density scaling, semiconductor technology outlook.","question":"What are the future developments expected for Semiconductor Memory Device and Method for Manufacturing the Same?"}],"topics":["semiconductor memory device","memory manufacturing method","3D NAND","stacked body","electrode films","relentless","pursuit","higher"],"tech_cluster":null},"seo":{"title":"Semiconductor Memory Device and Method for Manufacturing the Same - US-9852942","description":"Discover the groundbreaking Semiconductor Memory Device and Method for Manufacturing the Same patent, enhancing 3D memory density, reliability, and performance with innovative electrode films and voids.","keywords":["semiconductor memory device","memory manufacturing method","3D NAND","stacked body","electrode films","columnar parts","charge storage film","semiconductor pillar","memory density","memory reliability","patent US-9852942","semiconductor technology","non-volatile memory"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852942","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852942","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing the same\" (US-9852942). https://patentable.app/patents/US-9852942","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852942","json":"https://patentable.app/api/llm-context/US-9852942","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:58.386Z"}