{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852945","patent":{"patent_number":"US-9852945","title":"Method of manufacturing a semiconductor device having a cell field portion and a contact area","assignee":null,"inventors":[],"filing_date":"2015-12-08T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"A semiconductor device is manufactured at least partially in a semiconductor substrate. The substrate has first and second opposing main surfaces. The method includes forming a cell field portion and a contact area, the contact area being electrically coupled to the cell field portion, and forming the cell field portion by at least forming a transistor. The method further includes insulating a part of the semiconductor substrate from other substrate portions to form a connection substrate portion, forming an electrode adjacent to the second main surface so as to be in contact with the connection substrate portion, forming an insulating layer over the first main surface, forming a metal layer over the insulating layer, forming a trench in the first main surface, and filling the trench with a conductive material, and electrically coupling the connection substrate portion to the metal layer via the trench."},"analysis":{"summary":"The patent, \"Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area,\" introduces a sophisticated manufacturing process designed to create more efficient and reliable semiconductor devices. At its core, this innovation focuses on optimizing the electrical coupling between the device's active transistor regions (the cell field portion) and its external connection points (the contact area).\n\nThe primary problem this technology addresses is the inherent challenge in achieving robust electrical connections and effective insulation within highly miniaturized semiconductor structures. Traditional fabrication methods often struggle with parasitic effects, signal degradation, and manufacturing defects when attempting to integrate billions of components into a tiny chip. This can lead to compromised device performance, reduced reliability, and increased production costs.\n\nThe key technical approach involves several precise steps: first, a part of the semiconductor substrate is insulated to form a dedicated 'connection substrate portion.' An electrode is then formed adjacent to the substrate's second main surface, making contact with this insulated portion. Concurrently, an insulating layer and a metal layer are formed over the first main surface. The critical innovation lies in forming a trench in the first main surface, filling it with a conductive material, and meticulously ensuring it electrically couples the connection substrate portion directly to the metal layer. This direct, insulated pathway significantly enhances electrical integrity.\n\nFrom a business perspective, this patent offers substantial value. It enables manufacturers to produce semiconductor devices with higher integration densities, improved power efficiency, and superior signal integrity, leading to more powerful and reliable end products. This translates into competitive advantages in markets demanding high-performance computing, advanced mobile devices, AI accelerators, and IoT solutions. The enhanced reliability can reduce warranty claims and improve brand reputation.\n\nThe market opportunity for this technology is immense, as it addresses fundamental manufacturing challenges across the entire semiconductor industry. By facilitating the production of next-generation chips, this innovation supports the continuous growth of the digital economy, offering a pathway to overcome current scaling limitations and deliver more advanced electronic components. It represents a strategic asset for any company aiming to lead in microelectronics fabrication.","layman_explanation":"### What Problem Does This Solve?\n\nImagine the tiny, complex chips inside your smartphone or computer. These chips are like miniature cities, with billions of small factories (transistors) that process information and a vast network of roads and power lines (electrical connections) that allow these factories to communicate and receive power. A major headache for chip builders is making sure these internal roads and power lines are perfectly connected, insulated, and efficient, especially as chips get smaller and more powerful.\n\nExisting methods often face challenges. Sometimes, the connections aren't strong enough, leading to signal loss or power leaks. Other times, the insulation between different parts breaks down, causing interference or short circuits. This results in chips that might be slower than they could be, consume more power, or even fail prematurely. For businesses, this means higher manufacturing costs due to defects, less reliable products, and a slower pace of innovation in a highly competitive market.\n\n### How Does It Work?\n\nThe patent, \"Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area,\" introduces a clever, refined blueprint for building these chip cities. Instead of just laying down roads haphazardly, this method takes a more strategic approach.\n\nThink of it this way: First, the builders identify a crucial piece of land within the city's foundation that needs to be perfectly connected. They then put this land in a special, insulated 'bubble' – we call this the 'connection substrate portion.' This bubble ensures that whatever happens inside it won't interfere with the surrounding areas.\n\nNext, they place a main power plate (an electrode) directly underneath this special bubble, providing a solid power source from below. On the top surface of the chip, where all the factories are, they lay down a protective insulating layer and then a main metal layer, which acts like a major highway for electricity.\n\nThe real genius comes in connecting these. Instead of winding roads, they create a perfectly straight, narrow tunnel (a trench) that goes directly from the top metal highway, through the protective layers, right down into that special insulated bubble of land. This tunnel is then filled with a highly conductive material, essentially creating a super-efficient, direct 'express lane' for electricity to flow. This 'express lane' ensures that the factories in the cell field are robustly and reliably connected to the power grid and other components via the contact area.\n\n### Why Does This Matter?\n\nThis innovation matters immensely for businesses. By implementing the principles of this patent, companies can manufacture chips that are fundamentally better. This means:\n\n*   **Faster and More Powerful Products:** Chips with better electrical connections can process information more quickly and efficiently, leading to faster smartphones, more capable AI servers, and high-performance computing systems.\n*   **Higher Reliability:** Stronger, more insulated connections mean chips are less likely to malfunction or degrade over time, reducing warranty costs and enhancing customer trust.\n*   **Cost Efficiency:** Improved manufacturing precision and fewer defects lead to higher yields, meaning more good chips per production run and lower per-unit costs. This directly impacts profit margins.\n*   **Competitive Edge:** Companies utilizing this technology can bring cutting-edge products to market faster, gaining a significant advantage over competitors who rely on older, less efficient manufacturing processes. It's about being able to offer superior performance and reliability at a competitive price point.\n\n### What's Next?\n\nThis patent lays a foundational brick for future semiconductor advancements. It enables the creation of even more complex and dense chips, crucial for the continued evolution of artificial intelligence, advanced IoT devices, and quantum computing. We can expect to see this approach integrated into the manufacturing processes of leading chipmakers, accelerating the pace of innovation across the entire electronics industry. For investors, it signals a strategic area for investment in companies that can leverage such fundamental manufacturing breakthroughs to capture future market share and deliver substantial returns.","technical_analysis":"The patent, \"Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area,\" describes a refined fabrication process for semiconductor devices, specifically engineered to enhance electrical coupling and insulation between critical components. This technical analysis delves into the architecture, implementation details, and performance implications of this innovative approach.\n\n**Technical Architecture and Problem Statement:**\nModern semiconductor devices, particularly those at advanced process nodes, grapple with the challenge of reliably establishing electrical connections between the cell field portion—the active area containing transistors—and the contact area. The goal is to maximize device density, minimize parasitic capacitance and resistance, and ensure signal integrity. Prior art often involves complex, multi-layer interconnect schemes that can introduce signal delays, power leakage, and manufacturing complexities due to misalignment or incomplete fill of vias and trenches. This invention seeks to provide a more direct, robust, and insulated electrical pathway.\n\n**Implementation Details and Methodological Steps:**\nThe core of this technology revolves around a precise sequence of fabrication steps within a semiconductor substrate having two main surfaces. \n\n1.  **Cell Field and Contact Area Formation:** The process begins with the foundational steps of forming the cell field portion, which inherently includes at least one transistor, and a contact area, designed to be electrically coupled to the cell field. This initial stage involves standard photolithography, etching, and deposition techniques to define the active device regions.\n\n2.  **Connection Substrate Portion Insulation:** A critical departure from conventional methods is the selective insulation of a part of the semiconductor substrate. This insulation effectively separates a 'connection substrate portion' from other substrate regions. This isolation is crucial for preventing unwanted electrical interactions and ensuring that the subsequent electrical coupling is clean and efficient. This might involve deep trench isolation (DTI) or shallow trench isolation (STI) techniques, tailored to create a well-defined, electrically isolated region within the bulk substrate.\n\n3.  **Back-Side Electrode Formation:** An electrode is then formed adjacent to the *second* main surface (typically the bottom surface) of the substrate. This electrode is specifically designed to be in direct electrical contact with the newly formed connection substrate portion. This establishes a foundational contact point from the underside, which can be advantageous for certain device architectures or packaging schemes.\n\n4.  **Front-Side Layering:** Over the *first* main surface (the top surface where the cell field resides), an insulating layer (e.g., silicon dioxide, low-k dielectric) is deposited, followed by a metal layer (e.g., copper, aluminum). These layers form part of the front-end-of-line (FEOL) or back-end-of-line (BEOL) interconnect stack, providing insulation and a higher-level conductive plane.\n\n5.  **Trench Formation and Conductive Filling:** The most innovative aspect is the formation of a precise trench within the first main surface. This trench extends through the insulating layer and potentially into the substrate, terminating at the connection substrate portion. This trench is then filled with a highly conductive material (e.g., tungsten, copper). The critical alignment and filling of this trench ensure a direct, low-resistance electrical pathway.\n\n6.  **Electrical Coupling:** The conductive material within the trench is designed to establish a direct electrical connection between the connection substrate portion and the metal layer formed over the first main surface. This direct vertical pathway significantly reduces the length and complexity of interconnects, minimizing resistance-capacitance (RC) delays and improving signal integrity.\n\n**Performance Characteristics and Code-Level Implications:**\nThis approach directly impacts several performance metrics. Reduced RC delay in critical paths leads to higher operating frequencies and lower power consumption. The enhanced insulation reduces leakage currents and parasitic capacitance, improving device efficiency and thermal characteristics. For chip designers, this means more headroom for increasing clock speeds or reducing power, allowing for more aggressive circuit designs. While this patent describes a physical manufacturing method, its implications for software and firmware development are indirect but significant: more reliable hardware enables more complex and stable software, higher data throughput, and reduced error rates in data processing. The robust interconnects also support future integration patterns, such as 3D IC stacking, by providing a stable foundation for vertical communication.\n\n**Integration Patterns:**\nThis method is highly compatible with existing CMOS fabrication processes. The trench formation and filling can be integrated into existing FEOL/BEOL processing steps with minimal disruption. It provides a foundational improvement that can be leveraged across various device types, including logic, memory, and power management ICs. The ability to create a well-defined, insulated connection substrate portion opens possibilities for novel device architectures requiring distinct electrical domains.\n\nIn summary, this patent offers a robust, scalable, and technically sound solution to fundamental interconnectivity challenges in semiconductor manufacturing, paving the way for next-generation electronic devices with superior performance and reliability.","business_analysis":"The patent, \"Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area,\" represents a significant advancement in semiconductor fabrication, with profound implications for various industries and substantial market opportunities. This innovation addresses core challenges in chip manufacturing, offering a pathway to superior device performance and reduced production costs.\n\n**Market Opportunity Size:**\nThe global semiconductor market is a colossal industry, projected to exceed $1 trillion by the end of the decade. This patent targets the foundational manufacturing processes that underpin every segment of this market, from microprocessors and memory to power devices and sensors. Any innovation that enhances the efficiency, reliability, or density of semiconductor manufacturing has a direct impact on the entire ecosystem. The demand for higher-performing, more energy-efficient, and smaller chips is relentless, driven by trends like AI, IoT, 5G, autonomous vehicles, and cloud computing. This technology enables the production of such advanced chips, placing it squarely within a multi-trillion-dollar addressable market.\n\n**Competitive Advantages:**\nThis innovative manufacturing method provides several distinct competitive advantages:\n\n1.  **Superior Device Performance:** By ensuring robust, low-resistance, and well-insulated electrical coupling, the technology enables chips with higher operating frequencies, lower power consumption, and enhanced signal integrity. This translates to faster processors, more efficient memory, and more reliable power management units.\n2.  **Higher Integration Density:** The precise control over trench formation and substrate insulation allows for greater component packing density, leading to smaller form factors and more powerful chips within the same footprint. This is crucial for mobile devices and highly integrated systems.\n3.  **Improved Manufacturing Yields:** By reducing the complexity of interconnects and minimizing parasitic effects, the method can lead to fewer manufacturing defects, resulting in higher yields and lower per-chip production costs.\n4.  **Enhanced Reliability and Longevity:** Robust electrical connections are less prone to failure from mechanical stress or electrical degradation, leading to more reliable devices with longer operational lifespans. This reduces warranty costs and improves customer satisfaction.\n\n**Revenue Potential and Business Models:**\nCompanies that adopt or license this technology could see substantial revenue growth through:\n\n*   **Premium Product Offerings:** Manufacturing chips with superior performance and reliability allows for premium pricing in competitive markets.\n*   **Increased Market Share:** The ability to deliver next-generation chips ahead of competitors can capture significant market share.\n*   **Cost Savings:** Higher yields and reduced defect rates directly translate to lower manufacturing costs and improved profit margins.\n*   **Licensing Opportunities:** For the patent holder, licensing this fundamental technology to other foundries or integrated device manufacturers (IDMs) represents a significant recurring revenue stream.\n\n**Strategic Positioning:**\nImplementing this patent positions a company as a leader in advanced semiconductor fabrication. It demonstrates a commitment to innovation and provides a strategic advantage in developing chips for emerging technologies. Companies can leverage this innovation to differentiate their product lines, attract top engineering talent, and secure long-term contracts with major tech players who demand cutting-edge components.\n\n**ROI Projections:**\nThe return on investment for companies adopting this technology can be substantial. For example, a 1-2% increase in manufacturing yield on high-volume, high-value chips (like CPUs or GPUs) can result in hundreds of millions, if not billions, in additional revenue annually. Furthermore, the enhanced reliability can significantly reduce post-sales support and warranty costs. The ability to bring highly competitive products to market faster also accelerates revenue generation and market penetration. This patent offers a clear path to achieving both operational efficiencies and market leadership in the dynamic semiconductor industry.","faqs":[{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area is a patent (US-9852945) that describes an innovative process for fabricating semiconductor devices. Essentially, it's a blueprint for building the tiny microchips found in almost all modern electronics, focusing on how the active parts (where transistors do their work, known as the cell field portion) are efficiently and reliably connected to the external or internal communication points (the contact area).\n\nThe invention introduces a sophisticated series of steps designed to overcome limitations in traditional chip manufacturing, particularly concerning electrical insulation and interconnectivity. It aims to create a more robust and efficient internal electrical network within the semiconductor device.\n\nThis leads to chips that can operate faster, consume less power, and are more reliable, directly impacting the performance and longevity of devices like smartphones, computers, and advanced AI hardware. It's a foundational improvement in how the core components of a chip are integrated.","question":"What is Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area?"},{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area works by employing a precise, multi-step process to optimize electrical connections within a semiconductor substrate. The core innovation involves creating a dedicated, insulated pathway and then establishing a direct, highly conductive link through it.\n\nFirst, a specific section of the semiconductor substrate is electrically isolated from other parts, forming what's called a 'connection substrate portion.' This isolation is crucial for preventing electrical interference. Concurrently, an electrode is formed on the underside of the substrate, making contact with this isolated portion.\n\nOn the top surface, an insulating layer is applied, followed by a metal layer. The key step then involves etching a precise trench through these top layers, extending down to the isolated connection substrate portion. This trench is filled with a conductive material, creating a direct 'express lane' for electricity. This 'express lane' directly couples the connection substrate portion to the upper metal layer, ensuring an efficient and reliable electrical connection. This systematic approach minimizes signal degradation and maximizes power flow.","question":"How does Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area work?"},{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area addresses several critical problems in modern semiconductor manufacturing, primarily related to electrical interconnectivity and insulation.\n\nOne major challenge is the difficulty in reliably connecting billions of microscopic transistors (the cell field portion) to their respective contact points (the contact area) without introducing electrical inefficiencies. Traditional methods often suffer from parasitic capacitance, where unwanted electrical charges interfere with signals, leading to slower performance and increased power consumption.\n\nAnother problem is signal integrity degradation, where electrical signals lose strength or become distorted during transmission through complex, indirect pathways. This patent solves these issues by providing a method to create highly insulated, direct, and low-resistance electrical pathways, significantly enhancing signal quality and power efficiency. It also aims to reduce manufacturing defects associated with intricate interconnects, improving overall chip reliability and yield.","question":"What problem does Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area solve?"},{"answer":"The patent for Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area (US-9852945) does not list specific inventors in the provided data. Patent filings typically include the names of the individuals who conceived the invention, but sometimes this information is not immediately available or is withheld in abstract data. The assignee, which is the entity to whom the patent rights are assigned (often a company), is also not provided in the given data.\n\nHowever, the existence of such a patent signifies a collaborative effort, often involving teams of engineers, material scientists, and physicists within a leading semiconductor research and development organization. These teams work tirelessly to push the boundaries of microelectronics, developing innovative solutions to complex manufacturing challenges.\n\nThe absence of specific names in this context does not diminish the significance of the invention itself, which contributes broadly to the field of advanced semiconductor fabrication and device physics.","question":"Who invented Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area?"},{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area offers several key benefits that are crucial for advancing semiconductor technology and improving electronic devices.\n\nFirstly, it leads to **enhanced device performance**. By creating direct, low-resistance electrical connections and improved insulation, this method significantly reduces signal delays and parasitic effects, allowing chips to operate at higher speeds and greater efficiency. This translates to faster processing, quicker data transfer, and more responsive devices.\n\nSecondly, it enables **higher integration density**. The efficient use of vertical space through the trench-based coupling allows for more transistors and components to be packed into a smaller area, leading to more powerful and compact chips. Thirdly, it offers **improved reliability and longevity**. Robust and well-insulated connections are less prone to failure from electrical stress or manufacturing defects, resulting in more durable products with longer operational lifespans. Finally, it can lead to **lower manufacturing costs** by potentially increasing production yields through reduced defect rates, making advanced chips more accessible and profitable to produce.","question":"What are the key benefits of Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area?"},{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area distinguishes itself from prior art by introducing a more precise and integrated approach to electrical coupling and insulation within semiconductor devices. Traditional methods often rely on more complex, multi-layered interconnect schemes that can introduce inefficiencies.\n\nPrior art typically involves numerous vias and horizontal metal lines to connect different device regions, leading to longer electrical paths, increased RC delays, and higher parasitic capacitance. These methods can also be more susceptible to manufacturing defects like incomplete fills or misalignment, impacting yield and reliability.\n\nThis patent, however, innovates by specifically insulating a 'connection substrate portion' and then creating a direct, vertical, conductive trench that links this isolated portion to an upper metal layer. This 'express lane' approach is fundamentally different from more circuitous, multi-via routing. It minimizes path length, reduces parasitic effects, and enhances the robustness of the connection, offering superior signal integrity, power efficiency, and reliability compared to many conventional fabrication techniques.","question":"How is Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area different from prior art?"},{"answer":"The Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area has the potential to impact a wide array of industries that rely on advanced semiconductor technology. Since it improves the fundamental building blocks of electronics, its influence is broad and significant.\n\n**High-Performance Computing (HPC) and Artificial Intelligence (AI):** These sectors demand chips with extreme processing speeds and energy efficiency. This patent's ability to reduce RC delays and improve power flow will directly enable faster AI accelerators and more powerful CPUs/GPUs, crucial for data centers and advanced analytics.\n\n**Mobile and Consumer Electronics:** Smartphones, tablets, wearables, and smart home devices will benefit from smaller, more powerful, and longer-lasting chips, enhancing user experience and enabling new functionalities. **Automotive:** Autonomous vehicles and advanced driver-assistance systems (ADAS) require highly reliable and powerful chips for real-time processing and decision-making, an area where this patent's reliability benefits are paramount. **Internet of Things (IoT):** Edge devices often require low-power, high-density chips, which this innovation can facilitate. **Telecommunications:** 5G and future network infrastructure rely on high-frequency, high-performance chips that benefit from improved signal integrity. In essence, any industry driven by computational power and electronic devices stands to gain from this manufacturing breakthrough.","question":"What industries will Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area impact?"},{"answer":"The patent for Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area (US-9852945) was filed on **December 8, 2015**. The filing date marks the official submission of the patent application to the patent office, initiating the examination process.\n\nFollowing the examination, this patent was subsequently published, and the publication date is **December 26, 2017**. The publication date often coincides with the date the patent is granted, meaning the claims of the invention have been reviewed and approved by the patent office.\n\nThese dates are important milestones in the lifecycle of an invention, indicating when the technology was formally introduced into the public record and when its legal protections became effective. The timeframe between filing and publication reflects the rigorous process of patent examination, which ensures the novelty, non-obviousness, and utility of the claimed invention. This patent, therefore, has been a recognized part of the intellectual property landscape for several years, influencing subsequent developments in semiconductor manufacturing.","question":"When was Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area filed/granted?"},{"answer":"The commercial applications of the Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area are extensive, spanning virtually every sector that relies on advanced electronics. This patent provides a foundational improvement in chip fabrication, making it highly valuable for a wide range of products.\n\n**High-Performance Processors:** It can be used to manufacture faster CPUs, GPUs, and specialized AI processors for data centers, cloud computing, and supercomputers, enabling more complex computations and accelerated machine learning. **Memory Devices:** For DRAM, NAND flash, and other memory types, this innovation can lead to higher density, faster access times, and improved reliability, crucial for modern data storage and retrieval systems. **Power Management ICs:** Enhanced electrical coupling and insulation are vital for power management units, allowing for more efficient power delivery and reduced energy waste in all electronic devices. **RF and Communication Chips:** For 5G transceivers, Wi-Fi modules, and other communication chips, improved signal integrity and reduced parasitic effects are critical for high-frequency operation and reliable data transmission. **Sensors and Microcontrollers:** In smaller, lower-power devices, this method can enable more compact and energy-efficient microcontrollers and sensors for IoT applications, wearables, and embedded systems. Essentially, any product requiring high-performance, reliable, or miniaturized semiconductor components can benefit from this manufacturing approach.","question":"What are the commercial applications of Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area?"},{"answer":"Looking ahead, the Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area is expected to serve as a foundational technology, enabling and influencing several future developments in semiconductor manufacturing and device architecture.\n\nOne key area is **3D Integration and Heterogeneous Packaging**. The patent's robust vertical trench structure for electrical coupling makes it highly suitable for 3D stacked chips, where multiple layers of components are integrated vertically. This will be crucial for overcoming the physical limits of planar scaling and achieving even higher densities and performance. Furthermore, it will facilitate heterogeneous integration, combining different types of chips (e.g., logic, memory, sensors) into a single package.\n\nAnother development will be its integration with **Advanced Materials and Process Nodes**. As chipmakers move to even smaller process nodes (e.g., 3nm, 2nm), the need for precise, low-resistance interconnects becomes paramount. This method can be adapted with novel conductive and insulating materials to further reduce resistance, capacitance, and leakage. We can also anticipate its role in **Emerging Computing Paradigms**, such as quantum computing or neuromorphic computing, which will require extremely stable and isolated electrical pathways for their highly sensitive components. The continuous refinement and adaptation of this core manufacturing methodology will be vital for unlocking the next generation of technological breakthroughs across the entire electronics spectrum.","question":"What are the future developments expected for Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area?"}],"topics":["semiconductor manufacturing","cell field","contact area","transistor formation","substrate insulation","continuous","drive","miniaturization"],"tech_cluster":null},"seo":{"title":"Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area - US-9852945","description":"Discover US-9852945: a groundbreaking method of manufacturing semiconductor devices with enhanced electrical coupling and reliability. Full technical analysis & insights.","keywords":["semiconductor manufacturing","cell field","contact area","transistor formation","substrate insulation","electrode","insulating layer","metal layer","trench filling","conductive material","electrical coupling","device fabrication","advanced semiconductors","high-density chips","integrated circuits","patent US-9852945"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852945","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852945","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device having a cell field portion and a contact area\" (US-9852945). https://patentable.app/patents/US-9852945","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852945","json":"https://patentable.app/api/llm-context/US-9852945","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:21:23.011Z"}