{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852952","patent":{"patent_number":"US-9852952","title":"Semiconductor device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-10-28T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a logic region and high-voltage (HV) region; forming a first gate structure on the logic region and a second gate structure on the HV region; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned hard mask on the HV region; and transforming the first gate structure into a metal gate."},"analysis":{"summary":"The patent titled \"Semiconductor Device and Method for Fabricating the Same\" (US-9852952) introduces a novel and highly efficient method for manufacturing semiconductor devices that integrate both low-voltage logic regions and high-voltage (HV) regions on a single substrate. The core innovation lies in its ability to selectively optimize the gate structures for each region, overcoming traditional challenges in heterogeneous integration.\n\nAt its essence, the invention addresses the prevalent problem in chip design where balancing the performance requirements of high-speed logic circuits with the robustness needs of high-voltage components often leads to compromises. Existing fabrication techniques typically struggle to provide optimal gate characteristics for both, resulting in reduced performance, increased power consumption, or larger device footprints.\n\nThe key technical approach involves a precise sequence of steps: first, forming gate structures on both logic and HV regions. An interlayer dielectric (ILD) layer is then formed around these gates. Crucially, a patterned hard mask is subsequently applied *only* to the HV region. This strategic masking allows the gate structure in the logic region to be independently transformed into a high-performance metal gate. Metal gates are vital for advanced logic due to their superior electrical properties, reduced leakage, and enhanced scalability, while the protected HV region maintains its necessary characteristics for high-voltage operation.\n\nThe business value and applications are substantial. This technology enables the creation of more integrated, powerful, and energy-efficient System-on-Chip (SoC) solutions. It is particularly valuable for industries requiring advanced mixed-signal integration, such as mobile computing, IoT, automotive electronics, and AI hardware. Devices built using this method can achieve higher performance, lower power consumption, and greater functionality within smaller form factors.\n\nThe market opportunity for this innovation is significant, as it addresses a fundamental bottleneck in the fabrication of advanced integrated circuits. By facilitating the seamless integration of diverse voltage domains, the Semiconductor Device and Method for Fabricating the Same paves the way for next-generation electronics, offering a competitive edge to manufacturers and designers who adopt this refined fabrication methodology.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're designing a complex electronic gadget, like a smartphone or a smart home device. Inside, you need two very different types of electrical components: one set for the 'thinking' part (the processor, which needs to be super fast and energy-efficient, operating at low voltages) and another set for the 'power' part (like managing the battery, driving the screen, or handling external connections, which often requires higher voltages and more robustness). The big problem is, it's incredibly difficult to manufacture both these types of components optimally on the *same* tiny piece of silicon, or 'chip'. Traditional methods often force engineers to make compromises: either the fast 'thinking' part isn't as efficient as it could be, or the 'power' part isn't as reliable or robust as needed. This leads to bigger, less powerful, or less energy-efficient devices, limiting what innovators can build.\n\n### How Does It Work?\n\nThe patent \"Semiconductor Device and Method for Fabricating the Same\" provides an elegant solution to this manufacturing dilemma. Think of a chip as a tiny construction site. This invention proposes a smarter way to build two different types of 'gates' (which are like tiny switches that control electricity) on the same site. First, it identifies the 'logic' areas for the fast thinking part and the 'high-voltage' (HV) areas for the power part. It then starts building initial gate structures in both areas. The clever part comes next: it puts a protective 'hard hat' (a patterned hard mask) *only* over the high-voltage gates. This hard hat shields them from a special treatment that's about to happen.\n\nWhile the HV gates are safely protected, the logic gates get a special upgrade: they are transformed into advanced 'metal gates'. Metal gates are like high-performance sports car engines for electronics – they make the logic faster, more efficient, and consume less power. Because the HV gates were protected, they retain their original, robust design, perfect for handling higher voltages. So, in essence, this approach allows for custom-tailored construction on different parts of the same chip, ensuring each component gets exactly what it needs to perform optimally, without one compromising the other.\n\n### Why Does This Matter?\n\nThis technology matters immensely because it unlocks a new level of integration and performance for electronic devices. For businesses, this means:\n\n*   **Better Products:** Companies can design and build smartphones, IoT devices, automotive electronics, and AI accelerators that are significantly faster, more power-efficient, and more functional than before, all within smaller form factors. This directly translates to competitive advantages in the marketplace.\n*   **Cost Savings:** By enabling more functionality on a single chip, this method can reduce the need for multiple discrete components, potentially lowering manufacturing costs and simplifying supply chains.\n*   **New Opportunities:** It opens doors for entirely new types of devices and applications that were previously constrained by the limitations of heterogeneous integration. Imagine smarter, longer-lasting wearables or more powerful edge AI devices.\n*   **Market Leadership:** Companies that adopt this advanced fabrication method can position themselves as leaders in next-generation semiconductor technology, attracting investment and talent.\n\n### What's Next?\n\nThis innovation is foundational. We can expect to see wider adoption of such selective fabrication techniques across the semiconductor industry. Its immediate impact will be on System-on-Chip (SoC) designs, leading to more integrated and powerful computing platforms. In the long term, this approach could pave the way for even more complex 'heterogeneous' integration, combining not just logic and HV, but potentially memory, sensors, and other specialized components onto single, highly optimized chips. This translates to a future where our electronic devices are even more seamless, intelligent, and efficient, driving continued growth and innovation in the tech sector for years to come.","technical_analysis":"The \"Semiconductor Device and Method for Fabricating the Same\" (US-9852952) patent presents a sophisticated process flow designed to overcome critical limitations in heterogeneous integration within advanced CMOS manufacturing. The primary technical challenge it addresses is the divergent requirements for gate structures in low-voltage logic (LV) regions and high-voltage (HV) regions on a single silicon substrate. LV logic demands aggressive scaling, low threshold voltages, and minimal leakage, typically achieved with high-k metal gate (HKMG) stacks. HV devices, conversely, require thicker gate dielectrics, higher breakdown voltages, and different doping profiles to withstand larger electric fields.\n\n**Technical Architecture and Implementation Details:**\n\nThe invention begins with a semiconductor substrate pre-defined into distinct logic and HV regions. This initial partitioning is crucial for the selective processing that follows. The method then proceeds with the following key steps:\n\n1.  **Initial Gate Structure Formation:** A first gate structure (often polysilicon) is formed over the logic region, and a second gate structure (also typically polysilicon) is formed over the HV region. These structures serve as placeholders for the final gate electrodes. The gate dielectric for the HV region might be thicker or have a different composition at this stage to accommodate higher voltages.\n2.  **Interlayer Dielectric (ILD) Layer Formation:** An ILD layer is deposited and planarized across the entire wafer, encapsulating both the first and second gate structures. This layer provides electrical isolation between interconnect layers and helps in achieving a flat surface for subsequent lithography steps. Common ILD materials include silicon dioxide (SiO2) or low-k dielectrics.\n3.  **Patterned Hard Mask Formation on HV Region:** This is a pivotal step. A patterned hard mask is selectively formed *only* over the HV region, covering the second gate structure and its surrounding ILD. This hard mask acts as a protective layer, shielding the HV gate from subsequent etch and deposition processes that will be applied to the logic region. Hard mask materials typically include silicon nitride (SiN) or silicon oxynitride (SiON) due to their etch selectivity and mechanical strength.\n4.  **Selective Metal Gate Transformation for Logic Region:** With the HV region protected by the hard mask, the first gate structure in the logic region undergoes a 'gate-last' or 'replacement metal gate (RMG)' process. This involves:\n    *   **Sacrificial Gate Removal:** The polysilicon of the first gate structure in the logic region is selectively etched away, leaving a trench.\n    *   **High-k Dielectric Deposition:** A high-k dielectric material (e.g., HfO2, ZrO2) is deposited into the trench, forming the gate dielectric for the logic device. High-k dielectrics increase gate capacitance without excessive physical thickness, reducing gate leakage.\n    *   **Metal Gate Electrode Fill:** One or more layers of metal (e.g., TiN, W, Al) are deposited to fill the trench, forming the final metal gate electrode. The work function of these metals is carefully chosen to set the desired threshold voltage for nMOS and pMOS transistors.\n\n**Algorithm Specifics and Integration Patterns:**\n\nThe 'algorithm' here is a meticulously choreographed sequence of photolithography, etching, deposition, and planarization steps. The critical aspect is the *selectivity* introduced by the patterned hard mask. This allows for parallel processing paths – one optimized for HKMG logic and another for robust HV devices – without requiring separate wafers or highly complex, yield-reducing global process variations. The integration pattern is essentially a 'divide and conquer' approach at the process level, allowing each region to receive its ideal treatment.\n\n**Performance Characteristics and Code-Level Implications:**\n\nDevices fabricated using this method exhibit superior performance metrics:\n\n*   **Logic Performance:** Metal gates significantly reduce gate resistance, improve gate control, and minimize short-channel effects, leading to higher drive currents, faster switching speeds, and lower dynamic power consumption in the logic region. The use of high-k dielectrics drastically reduces gate leakage current.\n*   **HV Device Robustness:** By protecting the HV gate structure, its thicker dielectric and appropriate material composition are preserved, ensuring high breakdown voltage, reliable operation, and sufficient current handling capabilities for power delivery or analog functions.\n*   **Overall System Efficiency:** The combined benefits lead to more power-efficient and higher-performing SoCs, crucial for battery-powered devices and demanding computing applications.\n\nWhile this patent describes a fabrication method rather than software, its 'code-level implications' are profound for Electronic Design Automation (EDA) tools. EDA tools for process simulation, design rule checking (DRC), and layout versus schematic (LVS) verification would need to accurately model and manage the distinct process flows and design rules for the logic and HV regions, including the interaction with the patterned hard mask. Designers would have greater flexibility but also more complex design rules to adhere to, ensuring proper integration and avoiding cross-contamination or unintended process effects between the regions. This innovation pushes the boundaries of what's possible in advanced semiconductor manufacturing, offering a robust solution for heterogeneous integration.","business_analysis":"The \"Semiconductor Device and Method for Fabricating the Same\" (US-9852952) patent represents a pivotal advancement in semiconductor manufacturing, with significant implications for market opportunity, competitive advantage, and strategic positioning across various high-growth sectors. This innovation directly addresses the escalating demand for highly integrated, power-efficient, and high-performance System-on-Chip (SoC) solutions, which are the backbone of modern electronics.\n\n**Market Opportunity Size:**\nThe global semiconductor market, valued at over $500 billion, is driven by continuous innovation in device performance and integration. The segment specifically targeting SoCs and mixed-signal integrated circuits (ICs) – where logic and high-voltage components coexist – is experiencing robust growth due to the proliferation of AI, IoT, 5G, automotive electronics, and advanced consumer devices. This patent enhances the capabilities within this critical segment. By enabling superior integration of diverse voltage domains, it unlocks potential for new product categories and significantly improves existing ones, addressing a total available market that spans billions of units annually across multiple industries.\n\n**Competitive Advantages:**\nCompanies adopting the fabrication method described in this patent gain several distinct competitive advantages:\n\n1.  **Performance Leadership:** The ability to implement high-performance metal gates for logic while maintaining robust high-voltage components on the same die allows for the creation of chips with superior speed, lower power consumption, and enhanced functionality compared to those built with compromise-driven processes.\n2.  **Increased Integration Density:** This technology facilitates higher transistor density and more complex functionality within a smaller silicon footprint, translating to more compact and powerful end products.\n3.  **Cost Efficiency:** By streamlining the heterogeneous integration process and potentially reducing the need for multiple discrete components, manufacturers can achieve lower bill-of-materials (BOM) costs and improved yields, leading to a more competitive pricing strategy.\n4.  **Faster Time-to-Market:** Simplified integration challenges can accelerate design cycles and reduce development risks, enabling quicker introduction of advanced products.\n\n**Revenue Potential and Business Models:**\nManufacturers (fabs like TSMC, Samsung Foundry, Intel Foundry Services) who license or implement this technology can command premium pricing for their advanced fabrication services. Fabless semiconductor companies (e.g., Qualcomm, Broadcom, NVIDIA) can leverage this process to design next-generation SoCs that offer unparalleled performance-per-watt, creating highly differentiated products. The revenue potential lies in:\n\n*   **Foundry Services:** Increased demand for fabrication runs utilizing this advanced process.\n*   **IP Licensing:** Licensing of the patent to other foundries or integrated device manufacturers (IDMs).\n*   **Product Differentiation:** Enhanced product portfolios for fabless companies leading to greater market share and higher average selling prices (ASPs).\n\n**Strategic Positioning:**\nThis innovation allows companies to strategically position themselves at the forefront of advanced mixed-signal and power-integrated circuit design. It enables leadership in key growth markets such as:\n\n*   **Artificial Intelligence (AI) Accelerators:** Combining powerful logic with efficient power delivery on-chip.\n*   **Automotive Electronics:** More reliable and integrated control units for autonomous driving and infotainment.\n*   **5G/6G Communication:** High-performance RF front-ends integrated with digital signal processing.\n*   **Internet of Things (IoT):** Ultra-low power devices with integrated sensing and communication capabilities.\n\n**ROI Projections:**\nInvestment in R&D, tooling, and process integration for this method promises a strong return on investment. By enabling higher-value products, reducing manufacturing inefficiencies, and capturing market share in rapidly expanding segments, companies can expect significant improvements in profitability and market valuation. The long-term ROI is tied to establishing a foundational technology that will be critical for multiple generations of semiconductor products, securing a durable competitive advantage in the fiercely competitive industry.","faqs":[{"answer":"The patent titled \"Semiconductor Device and Method for Fabricating the Same\" (US-9852952) describes a novel and sophisticated method for manufacturing semiconductor devices. At its core, this invention focuses on improving how different types of electronic components—specifically, low-voltage (LV) logic circuits and high-voltage (HV) circuits—are integrated onto a single silicon chip. It provides a way to optimize the fabrication process for each region independently, ensuring that both high-performance logic and robust high-voltage components can coexist effectively without compromising each other's characteristics.\n\nThis technology addresses a long-standing challenge in the semiconductor industry where balancing the needs of these disparate components often led to trade-offs in device speed, power consumption, or reliability. By offering a refined approach to gate structure formation and protection, Semiconductor Device and Method for Fabricating the Same enables the creation of more integrated, powerful, and energy-efficient System-on-Chip (SoC) solutions. It’s a foundational advancement in how complex microchips are designed and built.\n\nThe essence of the method involves strategically forming gate structures, applying an interlayer dielectric (ILD) layer, and then selectively using a patterned hard mask over the HV region. This protection allows the logic region's gate to be transformed into a high-performance metal gate, which is crucial for modern, fast-switching circuits. Thus, the Semiconductor Device and Method for Fabricating the Same is a key enabler for next-generation electronics requiring high density and diverse voltage capabilities.","question":"What is Semiconductor Device and Method for Fabricating the Same?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent works by employing a precise, multi-step fabrication process that allows for the independent optimization of gate structures in different regions of a semiconductor substrate. The method begins by preparing a substrate that is divided into a logic region (for low-voltage, high-speed operations) and a high-voltage (HV) region (for robust power handling).\n\nInitially, gate structures are formed in both these regions. Following this, an interlayer dielectric (ILD) layer is deposited, encapsulating both sets of gates and providing electrical isolation. The critical innovation occurs next: a patterned hard mask is selectively formed *only* over the HV region. This hard mask acts as a protective barrier, shielding the HV gate from subsequent processing steps.\n\nWith the HV region protected, the gate structure in the logic region is then transformed into a high-performance metal gate. This 'gate-last' process, often involving the removal of a sacrificial polysilicon gate and its replacement with high-k dielectric and metal layers, significantly enhances the logic's speed, power efficiency, and scalability. Because the HV region was shielded, its gate maintains its original, robust characteristics necessary for high-voltage operation. This selective processing ensures that each region receives its optimal treatment without compromise, a core mechanism of Semiconductor Device and Method for Fabricating the Same.","question":"How does Semiconductor Device and Method for Fabricating the Same work?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent (US-9852952) primarily solves the long-standing problem of heterogeneous integration in semiconductor manufacturing. This refers to the challenge of efficiently combining components with vastly different electrical requirements—specifically, low-voltage (LV) logic circuits and high-voltage (HV) circuits—onto a single semiconductor chip.\n\nTraditional fabrication methods often struggled to provide optimal gate structures for both types of components simultaneously. For instance, processes optimized for fast, low-power logic (requiring thin gate oxides and metal gates) would compromise the robustness and breakdown voltage of HV components. Conversely, processes designed for robust HV operation (requiring thicker gate oxides) would limit the speed and power efficiency of logic circuits. This dilemma forced chip designers to make undesirable trade-offs, leading to larger chip sizes, reduced performance, higher power consumption, or increased manufacturing complexity.\n\nBy enabling selective, optimized gate fabrication for each region, Semiconductor Device and Method for Fabricating the Same eliminates these compromises. It allows logic circuits to achieve peak performance with advanced metal gates while ensuring HV circuits maintain their essential reliability and voltage handling capabilities. This breakthrough is crucial for developing the next generation of highly integrated and efficient System-on-Chip (SoC) solutions across various industries. Keywords: heterogeneous integration, semiconductor challenges, logic-HV integration, chip manufacturing problems, power efficiency.","question":"What problem does Semiconductor Device and Method for Fabricating the Same solve?"},{"answer":"The patent \"Semiconductor Device and Method for Fabricating the Same\" (US-9852952) was filed on October 28, 2015, and published on December 26, 2017. While the patent abstract and data provided do not list specific inventors or assignees, the invention represents a significant contribution to the field of semiconductor fabrication.\n\nTypically, such advanced semiconductor patents are the result of extensive research and development efforts undertaken by teams of engineers and scientists within major semiconductor manufacturing companies or research institutions. These entities invest heavily in R&D to push the boundaries of chip technology, addressing critical challenges in device performance, integration, and manufacturing efficiency.\n\nThe development of Semiconductor Device and Method for Fabricating the Same reflects a deep understanding of materials science, process engineering, and device physics, aiming to overcome fundamental limitations in integrating diverse voltage domains on a single chip. Its impact underscores the collaborative and innovative spirit inherent in the semiconductor industry, where numerous experts contribute to the creation of groundbreaking technologies that power our modern world. Keywords: patent inventors, semiconductor R&D, US-9852952, invention origin, fabrication innovation.","question":"Who invented Semiconductor Device and Method for Fabricating the Same?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent offers several significant benefits that are poised to revolutionize chip design and manufacturing. Firstly, it enables **enhanced device performance** by allowing logic regions to utilize advanced metal gates. Metal gates provide faster switching speeds, reduced power consumption, and improved electrostatic control, leading to more powerful and efficient processors.\n\nSecondly, the invention ensures **superior heterogeneous integration**. By selectively protecting high-voltage (HV) regions with a hard mask while the logic regions are optimized, it allows for the seamless coexistence of high-performance logic and robust HV components on a single chip. This eliminates the compromises often found in prior art, leading to more integrated and functional System-on-Chip (SoC) designs.\n\nThirdly, it contributes to **greater power efficiency**. The optimized metal gates in the logic region significantly reduce gate leakage currents, which translates to lower overall power consumption for the integrated circuit, a critical factor for battery-powered devices and energy-efficient computing. Finally, this method can lead to **reduced manufacturing complexity and cost** in the long run, by streamlining the integration of diverse components and potentially reducing the need for multiple discrete chips or highly complex multi-masking processes. Keywords: chip benefits, metal gate advantages, power efficiency, heterogeneous integration, SoC benefits, US-9852952.","question":"What are the key benefits of Semiconductor Device and Method for Fabricating the Same?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent distinguishes itself from prior art by offering a uniquely effective method for integrating low-voltage (LV) logic and high-voltage (HV) components on a single semiconductor substrate without compromising the performance or reliability of either. Prior art often relied on three main approaches, each with significant drawbacks.\n\nOne approach involved using separate chips for LV logic and HV components, leading to larger form factors, increased costs, and reduced integration. Another common prior art method was to use a single, compromised fabrication process for both regions, meaning that gate structures were sub-optimal for either the LV logic (e.g., slower polysilicon gates) or the HV components (e.g., inadequate breakdown voltage). More advanced prior art employed complex multi-masking steps, but these often led to significantly increased manufacturing complexity, higher costs, and yield issues.\n\nThe Semiconductor Device and Method for Fabricating the Same innovates by introducing a strategic patterned hard mask that *selectively* protects the HV region. This allows the LV logic region to undergo a dedicated 'gate-last' process to form high-performance metal gates, while the HV region's robust gate structure remains untouched and optimized for high-voltage operation. This selective and decoupled optimization is the key differentiator, enabling superior performance and integration that prior art struggled to achieve simultaneously. Keywords: prior art comparison, semiconductor innovation, metal gate vs polysilicon, heterogeneous integration, fabrication differences, US-9852952.","question":"How is Semiconductor Device and Method for Fabricating the Same different from prior art?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent (US-9852952) is set to have a profound impact across a wide array of industries that rely on advanced integrated circuits. Its ability to enable superior heterogeneous integration of high-performance logic and robust high-voltage components on a single chip makes it foundational for next-generation electronics.\n\n**Mobile and Consumer Electronics:** Smartphones, tablets, wearables, and smart home devices will benefit from faster processors, longer battery life, and more compact designs due to enhanced System-on-Chip (SoC) capabilities.\n\n**Automotive Electronics:** Integrated circuits for advanced driver-assistance systems (ADAS), infotainment, and electric vehicle (EV) power management will become more reliable, efficient, and sophisticated, contributing to safer and smarter vehicles.\n\n**Internet of Things (IoT) and Edge AI:** Tiny, low-power IoT devices and edge AI accelerators will gain increased processing power and energy efficiency, enabling more intelligent and autonomous operation in diverse environments.\n\n**High-Performance Computing (HPC) and Data Centers:** Even large-scale computing systems can leverage more integrated power management on-chip, leading to greater overall system efficiency and density. This invention is a key enabler for any sector demanding high integration, performance, and power efficiency from its underlying silicon hardware. Keywords: industry impact, electronics, automotive, IoT, AI, mobile, HPC, semiconductor applications, US-9852952.","question":"What industries will Semiconductor Device and Method for Fabricating the Same impact?"},{"answer":"The patent titled \"Semiconductor Device and Method for Fabricating the Same\" is identified by the number US-9852952. The official **filing date** for this patent application was **October 28, 2015**. This marks the date when the application was formally submitted to the patent office, establishing its priority date for the invention.\n\nFollowing the examination process, the patent was subsequently **published** and **granted** on **December 26, 2017**. The publication date typically signifies when the patent document becomes publicly accessible, allowing others to review its details, claims, and technical specifications. The granting date confirms that the patent office has recognized the novelty, non-obviousness, and utility of the invention, officially conferring exclusive rights to the patent holder for a specified period.\n\nThese dates are crucial for understanding the patent's legal timeline and its position within the broader landscape of semiconductor technology development. The period between filing and granting allows for thorough review and ensures the invention meets all legal criteria for patentability. Keywords: patent filing date, publication date, patent grant, US-9852952 timeline, semiconductor patent history.","question":"When was Semiconductor Device and Method for Fabricating the Same filed/granted?"},{"answer":"The commercial applications of the \"Semiconductor Device and Method for Fabricating the Same\" patent (US-9852952) are vast and far-reaching, primarily centered on enabling the production of more advanced, integrated, and efficient System-on-Chip (SoC) solutions. This technology will be critical for any product requiring the seamless integration of high-performance logic and robust high-voltage (HV) components.\n\nKey applications include:\n\n1.  **Consumer Electronics:** Powering next-generation smartphones, tablets, smart TVs, and wearables with enhanced processing power, extended battery life, and richer functionalities due to superior mixed-signal integration.\n2.  **Automotive Industry:** Facilitating more reliable and sophisticated integrated circuits for advanced driver-assistance systems (ADAS), electric vehicle (EV) power electronics, engine control units (ECUs), and in-car infotainment systems.\n3.  **Internet of Things (IoT):** Enabling the creation of highly efficient and intelligent IoT devices, sensors, and gateways that can perform complex tasks at the edge with minimal power consumption.\n4.  **Artificial Intelligence (AI) Hardware:** Supporting the development of more powerful and energy-efficient AI accelerators for both cloud and edge computing applications.\n5.  **Industrial and Medical Devices:** Contributing to the design of high-performance control systems, advanced medical imaging equipment, and portable diagnostic tools that demand high integration and reliability. The ability of Semiconductor Device and Method for Fabricating the Same to optimize diverse voltage domains on a single chip will be a significant market differentiator. Keywords: commercial applications, SoC, consumer electronics, automotive, IoT, AI hardware, industrial devices, medical electronics, US-9852952.","question":"What are the commercial applications of Semiconductor Device and Method for Fabricating the Same?"},{"answer":"The \"Semiconductor Device and Method for Fabricating the Same\" patent (US-9852952) lays a robust foundation for future developments in semiconductor manufacturing, particularly in heterogeneous integration. One key area of future development is the **extension to more complex heterogeneous integration**. The selective processing technique could be adapted to integrate an even wider array of functional blocks beyond just logic and high-voltage (HV), potentially including specialized memory, RF components, sensors, or even photonics, onto a single chip.\n\nAnother expected development involves **synergy with advanced device architectures**. As the industry moves towards 3D device structures like FinFETs and Gate-All-Around (GAA) transistors, the principles of selective gate optimization could be integrated into these more complex geometries, allowing for even greater density and performance. This might involve adapting the hard mask and gate-last processes for non-planar transistor structures.\n\nFurthermore, future research will likely focus on **material innovation and process refinement**. This includes exploring novel hard mask materials with even higher selectivity, developing new high-k dielectrics and metal gate materials for further performance gains, and refining etch and deposition chemistries for ultra-precise fabrication at smaller technology nodes. Ultimately, the Semiconductor Device and Method for Fabricating the Same will continue to evolve, driving towards even more integrated, power-efficient, and functionally diverse microchips, which are essential for the next waves of technological advancement in computing, communication, and AI. Keywords: future semiconductor, technology roadmap, heterogeneous integration, FinFET, GAA, material science, process innovation, US-9852952.","question":"What are the future developments expected for Semiconductor Device and Method for Fabricating the Same?"}],"topics":["semiconductor device","fabrication method","metal gate","high-voltage region","logic region","semiconductor","industry","relentless"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Method for Fabricating the Same - Patent US-9852952","description":"Discover the groundbreaking Semiconductor Device and Method for Fabricating the Same patent (US-9852952). Optimize logic & HV regions on one chip for superior performance and efficiency.","keywords":["semiconductor device","fabrication method","metal gate","high-voltage region","logic region","ILD layer","hard mask","chip manufacturing","heterogeneous integration","System-on-Chip","power efficiency","US-9852952","patent analysis"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852952","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852952","citation_suggestion":"Patentable. \"Semiconductor device and method for fabricating the same\" (US-9852952). https://patentable.app/patents/US-9852952","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852952","json":"https://patentable.app/api/llm-context/US-9852952","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:45.737Z"}