{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852953","patent":{"patent_number":"US-9852953","title":"CMOS fabrication","assignee":null,"inventors":[],"filing_date":"2015-11-16T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A method of manufacturing a memory device includes an nMOS region and a pMOS region in a substrate. A first gate is defined within the nMOS region, and a second gate is defined in the pMOS region. Disposable spacers are simultaneously defined about the first and second gates. The nMOS and pMOS regions are selectively masked, one at a time, and LDD and Halo implants performed using the same masks as the source/drain implants for each region, by etching back spacers between source/drain implant and LDD/Halo implants. All transistor doping steps, including enhancement, gate and well doping, can be performed using a single mask for each of the nMOS and pMOS regions. Channel length can also be tailored by trimming spacers in one of the regions prior to source/drain doping."},"analysis":{"summary":"The Cmos Fabrication patent (US-9852953) presents a highly efficient and simplified method for manufacturing CMOS (Complementary Metal-Oxide-Semiconductor) memory devices. The core innovation lies in drastically reducing the number of photolithographic masking steps required for transistor fabrication, thereby lowering costs and increasing manufacturing throughput.\n\nTraditionally, CMOS manufacturing involves numerous masking stages for defining nMOS and pMOS regions, gates, various implants (e.g., source/drain, LDD, Halo), and well doping. This multi-mask approach leads to increased complexity, extended production cycles, higher potential for misalignment defects, and challenges in precisely controlling transistor characteristics.\n\nThis invention addresses these problems by introducing a method where disposable spacers are simultaneously defined around nMOS and pMOS gates. Crucially, it allows for LDD (Lightly Doped Drain) and Halo implants to be performed using the *same masks* as the source/drain implants for each region, achieved through a strategic etching back of the spacers. Furthermore, all transistor doping steps—including enhancement, gate, and well doping—can be completed using a *single mask* for each nMOS and pMOS region. The patent also enables precise channel length tailoring by trimming spacers before source/drain doping.\n\nThe business value of this technology is significant. It promises substantial reductions in manufacturing costs due to fewer masks and shorter processing times. Improved yield rates, enhanced device performance through precise channel length control, and faster time-to-market for new memory products are key benefits. This innovation positions manufacturers to produce more competitive, higher-density, and lower-power memory solutions. The market opportunity is immense, impacting sectors from consumer electronics and automotive to data centers and artificial intelligence, all of which rely heavily on advanced memory devices.","layman_explanation":"### What Problem Does This Solve?\nImagine you're running a highly specialized factory that builds incredibly tiny, complex electronic components, like the memory chips in your smartphone or computer. A major challenge in this factory is that to create different layers and apply specific materials (a process called 'doping'), you need to use many different stencils, or 'masks.' Each mask is expensive to design and produce, takes time to align perfectly, and every time you swap one out, there's a chance something could go wrong, leading to wasted product. This multi-mask approach makes chip manufacturing slow, costly, and prone to errors, which ultimately drives up the price of electronics and limits how quickly new, more powerful devices can reach the market.\n\n### How Does It Work?\nThe **Cmos Fabrication** patent (US-9852953) offers a brilliant solution by essentially making the 'stencil' process much smarter and more efficient. Instead of needing a new mask for nearly every step, this invention allows manufacturers to reuse masks for multiple critical operations. Think of it like this: you start by laying down the basic structure (the 'gates') and some temporary guides (the 'disposable spacers'). Then, when it's time to apply specific materials (like 'LDD' and 'Halo' implants), the patent describes using the *same mask* that was used for a previous step (the 'source/drain implants'). How? By cleverly trimming those temporary guides in between, the old mask can now define a new, precise area. Even more impressively, for all the major material application steps on each side of the chip (nMOS and pMOS regions), you only need *one* master mask! This significantly reduces the total number of physical masks required and the time spent aligning them. Furthermore, the technology enables precise control over the 'channel length' – a tiny feature that dictates how well a transistor performs – by adjusting those temporary guides before the main manufacturing begins.\n\n### Why Does This Matter?\nThis innovation has profound implications for the business world. First, by cutting down on the number of masks and simplifying the process, manufacturers can realize substantial **cost savings**. This means cheaper production, which can translate into more competitive pricing for memory products or higher profit margins. Second, the reduced complexity and fewer steps lead to **faster production cycles**, allowing companies to bring new, advanced memory chips to market more quickly. This is crucial in the fast-paced electronics industry. Third, minimizing mask changes and improving alignment precision often results in **higher manufacturing yields**, meaning fewer defective chips and less wasted material. Finally, the ability to precisely tailor the channel length allows for the creation of memory devices that are optimized for specific needs—whether it's ultra-low power consumption for wearables or lightning-fast speed for data centers. This competitive edge can drive market share gains and enable new product categories.\n\n### What's Next?\nThe Cmos Fabrication patent sets a new standard for efficiency in semiconductor manufacturing. We can expect this approach to be adopted by leading foundries and chipmakers, leading to a new generation of memory devices that are not only more affordable but also more powerful and energy-efficient. This innovation will likely accelerate advancements in areas like artificial intelligence, 5G connectivity, and autonomous vehicles, all of which demand increasingly sophisticated memory solutions. For investors, this represents a significant opportunity in companies that either hold this patent or successfully license and implement its methodology, as it touches a fundamental aspect of the digital economy's infrastructure.","technical_analysis":"The Cmos Fabrication patent (US-9852953) describes an advanced method for manufacturing CMOS memory devices, focusing on optimizing the doping processes within nMOS and pMOS regions to enhance efficiency and precision. This technical breakdown illuminates the architectural and procedural innovations at its core.\n\n**Technical Architecture and Substrate Preparation:**\nThe invention begins with a substrate configured to include both nMOS and pMOS regions. This foundational setup is standard in CMOS technology, where these regions are electrically isolated and host the respective transistor types. A critical initial step involves defining a first gate within the nMOS region and a second gate within the pMOS region. Simultaneously, disposable spacers are defined about both these gates. These spacers are temporary structures crucial for subsequent self-aligned doping steps and for defining effective gate lengths.\n\n**Implementation Details and Mask Reduction Strategy:**\nThe primary technical breakthrough of this patent lies in its sophisticated mask reduction and reuse strategy:\n\n1.  **Sequential Selective Masking for Implants:** The nMOS and pMOS regions are selectively masked, one at a time, to perform critical doping steps. This sequential approach ensures that implants are introduced only into the desired region without affecting the other.\n2.  **Mask Reuse for LDD and Halo Implants:** A key innovation is performing LDD (Lightly Doped Drain) and Halo implants using the *same masks* as the source/drain implants for each region. This is achieved by a precise intermediate step: etching back the disposable spacers *between* the source/drain implant and the LDD/Halo implants. The initial, thicker spacers define the source/drain implant area. After etching them back, the reduced spacers, along with the same mask, then define the narrower LDD and Halo implant regions. This ingenious reuse significantly cuts down the number of photolithography steps, a major cost and time driver in semiconductor manufacturing.\n3.  **Single-Mask Transistor Doping:** The patent further extends this efficiency by stating that *all* transistor doping steps—including enhancement, gate, and well doping—can be performed using a *single mask* for each of the nMOS and pMOS regions. This represents a substantial simplification compared to conventional processes that often require multiple masks for these distinct doping profiles. The ability to achieve comprehensive doping with minimal masks implies highly integrated process flows and potentially self-aligned schemes for various dopants.\n\n**Algorithm Specifics and Performance Characteristics:**\nWhile not an 'algorithm' in the software sense, the sequence of operations constitutes a meticulously designed process flow. The 'algorithm' here optimizes for:\n\n*   **Mask Count Minimization:** The core objective, achieved through spacer engineering and mask reuse.\n*   **Self-Alignment:** The use of spacers inherently provides self-alignment for various implants relative to the gate, reducing overlay errors.\n*   **Channel Length Control:** The ability to tailor channel length by trimming spacers in one of the regions *prior* to source/drain doping is a critical performance characteristic. This allows for precise tuning of transistor threshold voltage, drive current, and leakage, which are fundamental to device speed and power consumption. This level of control is paramount for advanced node devices.\n\n**Integration Patterns and Code-Level Implications:**\nFrom an integration perspective, this technology suggests a highly consolidated process module. Instead of disparate modules for LDD, Halo, and source/drain implants, this approach integrates them more tightly, potentially leading to a more compact fab footprint and reduced fab-to-fab variation. For process engineers, this means developing and optimizing a sequence that precisely controls spacer etch-back rates and implant energies/doses within a single mask framework. While there are no direct 'code-level implications' for software, the precise control of etch times, gas flows, and implant parameters would be managed by highly sophisticated fab automation software and recipe management systems, requiring rigorous characterization and modeling of each step to achieve the desired profiles and device characteristics.","business_analysis":"The **Cmos Fabrication** patent (US-9852953) introduces a significant advancement in semiconductor manufacturing, particularly for memory devices, with profound implications for the global electronics industry. Its core value proposition—reducing manufacturing complexity and cost while enhancing precision—positions it as a potential disruptor in a market characterized by intense competition and relentless demand for performance and efficiency.\n\n**Market Opportunity Size:** The global semiconductor memory market is a colossal and rapidly expanding sector, projected to reach hundreds of billions of dollars in the coming years. This includes DRAM, NAND flash, and emerging memory technologies, all of which rely on advanced CMOS fabrication. Any innovation that can streamline production, reduce costs, or improve yield in this foundational process addresses a massive market opportunity. The Cmos Fabrication technology directly targets the core manufacturing bottleneck, making it relevant across the entire memory device spectrum.\n\n**Competitive Advantages:** Adopting this patented method could provide manufacturers with several distinct competitive advantages:\n\n1.  **Cost Reduction:** By significantly reducing the number of photolithographic masks required, the Cmos Fabrication patent directly lowers material costs and the operational expenses associated with mask procurement and maintenance. This translates into more cost-effective memory chips.\n2.  **Increased Throughput and Faster Time-to-Market:** Fewer masking steps mean shorter processing times. This accelerated fabrication cycle allows companies to bring new memory products to market faster, capturing early-mover advantages and responding more swiftly to market demands.\n3.  **Improved Yield and Quality:** Consolidating doping steps and reusing masks reduces the chances of misalignment errors, a common cause of defects. Higher yield rates directly improve profitability and reduce waste. The precise channel length tailoring also leads to higher quality, more performant, and more reliable devices.\n4.  **Enhanced Device Performance:** The ability to precisely control channel length enables the optimization of transistor characteristics, leading to memory devices with better speed, lower power consumption, and improved overall reliability – critical factors for competitive differentiation in modern electronics.\n\n**Revenue Potential and Business Models:** Companies that license or implement this Cmos Fabrication technology could realize substantial revenue growth through:\n\n*   **Direct Cost Savings:** Reduced manufacturing costs directly boost profit margins on existing memory products.\n*   **Market Share Gains:** Producing higher-performing, more cost-effective memory devices can lead to increased market share.\n*   **Premium Product Development:** The enhanced precision allows for the creation of specialized, high-performance memory tailored for demanding applications (e.g., AI accelerators, automotive, high-end mobile), commanding premium prices.\n*   **Licensing Opportunities:** The patent holder could generate significant revenue through licensing agreements with major semiconductor foundries and IDMs (Integrated Device Manufacturers).\n\n**Strategic Positioning:** This innovation allows companies to strategically position themselves as leaders in manufacturing efficiency and advanced memory technology. It enables a 'more for less' proposition: higher performance chips produced at lower costs. For firms looking to outmaneuver competitors in areas like power efficiency or chip density, this technology offers a critical leverage point.\n\n**ROI Projections:** While specific ROI would depend on implementation scale and existing infrastructure, the direct cost savings from mask reduction alone, combined with potential yield improvements and faster market cycles, suggest a very strong return on investment. For a typical fab, mask sets represent a significant capital expenditure. Reducing this by even a modest percentage, coupled with faster cycles, can free up substantial capital and accelerate revenue generation, making the Cmos Fabrication patent a compelling investment for any semiconductor manufacturer.","faqs":[{"answer":"Cmos Fabrication (US-9852953) is a patented method for manufacturing CMOS (Complementary Metal-Oxide-Semiconductor) memory devices that significantly streamlines the fabrication process. It focuses on reducing the number of photolithographic masking steps, which are traditionally costly, time-consuming, and prone to error.\n\nThe invention simplifies the doping steps for both nMOS and pMOS regions within a semiconductor substrate. This results in a more efficient and precise way to create the foundational transistors that power modern memory chips.\n\nEssentially, this technology offers a more intelligent sequence of operations, allowing manufacturers to achieve complex doping profiles with fewer physical masks and greater control over critical device dimensions.\n\nThis innovation is crucial for the semiconductor industry as it seeks to produce memory devices that are more affordable, higher-performing, and consume less power, meeting the growing demands of advanced electronics.","question":"What is Cmos Fabrication?"},{"answer":"The Cmos Fabrication patent works by intelligently consolidating multiple manufacturing steps, primarily through mask reuse and precise spacer engineering.\n\nFirst, it involves simultaneously defining the gates for both nMOS and pMOS regions and creating disposable spacers around these gates. These spacers are temporary structures that help define implant areas.\n\nCrucially, for subsequent doping steps like LDD (Lightly Doped Drain) and Halo implants, the Cmos Fabrication method reuses the *same masks* that were (or will be) used for the source/drain implants. This is achieved by precisely etching back the disposable spacers between these different implant stages, altering the effective opening defined by the mask.\n\nFurthermore, all major transistor doping steps, including enhancement, gate, and well doping, can be performed using a *single mask* for each of the nMOS and pMOS regions, drastically reducing the overall mask count. This streamlined process also allows for precise tailoring of the channel length by trimming spacers before source/drain doping, optimizing transistor performance.","question":"How does Cmos Fabrication work?"},{"answer":"Cmos Fabrication addresses several critical problems inherent in traditional semiconductor manufacturing, particularly for memory devices. The primary issue is the high number of photolithographic masking steps required. Each mask adds significant cost, extends production cycles, and increases the risk of misalignment errors, leading to lower manufacturing yields and higher overall chip costs.\n\nTraditional methods often require separate, dedicated masks for various implants (source/drain, LDD, Halo) and for gate and well doping, creating a complex and resource-intensive process. This complexity hinders the ability to produce memory devices more affordably and quickly.\n\nThis technology solves these issues by drastically reducing the mask count through intelligent reuse and consolidation of doping steps. It simplifies the process, lowers costs, speeds up production, and improves precision, ultimately enabling the creation of more competitive and advanced memory chips.","question":"What problem does Cmos Fabrication solve?"},{"answer":"The Cmos Fabrication patent, US-9852953, does not list specific inventors or an assignee in the provided data. Patents are typically assigned to companies or institutions, and the individual inventors are usually employees or researchers associated with that entity.\n\nWhile the specific individuals behind this innovation are not detailed here, the patent represents the culmination of advanced research and development in semiconductor process technology.\n\nSuch inventions are usually the result of collaborative efforts within R&D teams dedicated to pushing the boundaries of chip manufacturing efficiency and performance. The absence of specific names in the provided data is common when the focus is on the technology itself and its broader implications rather than the individual creators.","question":"Who invented Cmos Fabrication?"},{"answer":"The Cmos Fabrication patent offers several key benefits that are transformative for the semiconductor industry and, by extension, for all electronic devices.\n\nFirstly, it leads to a **significant reduction in manufacturing costs**. By drastically cutting down the number of expensive photolithographic masks required, material costs and operational expenses are lowered, making memory chips more affordable to produce.\n\nSecondly, it results in **faster production cycles**. Fewer masking steps mean less processing time, allowing manufacturers to bring new memory products to market more quickly and efficiently.\n\nThirdly, it provides **improved manufacturing yield and reliability**. The consolidated doping steps and mask reuse minimize opportunities for misalignment errors, leading to fewer defective chips and a higher percentage of usable products.\n\nFinally, the Cmos Fabrication method enables **enhanced device performance** through precise control over transistor channel length. This allows for optimization of chip speed, power consumption, and overall reliability, crucial for modern high-performance and low-power applications.","question":"What are the key benefits of Cmos Fabrication?"},{"answer":"Cmos Fabrication differentiates itself from prior art by fundamentally reimagining the doping process in CMOS manufacturing, primarily through aggressive mask reduction and enhanced control over critical dimensions.\n\nPrior art typically relies on a higher number of dedicated photolithographic masks for each distinct doping step (e.g., separate masks for source/drain, LDD, and Halo implants). This leads to increased complexity, cost, and potential for cumulative alignment errors.\n\nThe Cmos Fabrication patent, in contrast, innovates by reusing masks for multiple implant steps (e.g., LDD and Halo implants use the same masks as source/drain implants after a spacer etch-back). Furthermore, it allows *all* transistor doping steps (enhancement, gate, well, source/drain, LDD, Halo) to be performed with a *single mask* for each nMOS and pMOS region, which is a significant departure from multi-mask conventional methods.\n\nAdditionally, this technology offers a more direct and precise method for tailoring the transistor channel length by trimming disposable spacers *before* source/drain doping, providing a level of control that is often more complex or less granular in prior art techniques. These distinctions make Cmos Fabrication a more efficient, cost-effective, and performance-optimized approach.","question":"How is Cmos Fabrication different from prior art?"},{"answer":"The Cmos Fabrication patent will have a profound impact across a wide range of industries that rely heavily on advanced memory devices.\n\n**Consumer Electronics:** Smartphones, tablets, laptops, gaming consoles, and smart home devices will benefit from cheaper, faster, and more power-efficient memory chips, leading to more affordable and higher-performing products.\n\n**Data Centers and Cloud Computing:** The demand for high-density, high-speed memory in servers is immense. This technology can reduce the cost and improve the performance of DRAM and NAND flash, critical for cloud infrastructure and big data processing.\n\n**Artificial Intelligence (AI) and Machine Learning:** AI accelerators and systems require vast amounts of memory bandwidth and low latency. Cmos Fabrication can enable the production of specialized memory optimized for AI workloads, enhancing processing capabilities.\n\n**Automotive Industry:** Autonomous vehicles and advanced driver-assistance systems (ADAS) need robust, high-performance memory for real-time processing. This innovation can contribute to more reliable and cost-effective automotive electronics.\n\n**Internet of Things (IoT):** Edge devices often require low-power, compact memory solutions. The efficiency gains from Cmos Fabrication can support the proliferation of smart sensors and connected devices. Ultimately, any sector utilizing sophisticated digital electronics will feel the ripple effect of this advancement in semiconductor manufacturing.","question":"What industries will Cmos Fabrication impact?"},{"answer":"The Cmos Fabrication patent, identified as US-9852953, has a clear timeline regarding its filing and publication.\n\nThe patent was **filed on November 16, 2015**. This date marks when the application was submitted to the patent office, initiating the examination process.\n\nIt was subsequently **published (granted) on December 26, 2017**. The publication date indicates when the patent was officially issued, making its details public and granting the patent holder exclusive rights to the invention.\n\nThis timeline reflects the typical duration for patent examination and grant processes in the semiconductor industry, highlighting the period of review and validation of the innovation's novelty and non-obviousness before its formal issuance.","question":"When was Cmos Fabrication filed/granted?"},{"answer":"The commercial applications of the Cmos Fabrication patent are extensive, primarily centered around enhancing the competitiveness and efficiency of memory device manufacturing across various sectors.\n\nOne key application is in **mass production of commodity memory chips** like DRAM and NAND flash. By reducing manufacturing costs and increasing yield, companies can gain a significant competitive edge in these high-volume markets, leading to more affordable products for consumers and businesses.\n\nAnother application lies in **high-performance computing and specialized memory**. The ability to precisely tailor channel length allows for the creation of custom-optimized memory for demanding applications, such as those in AI, high-frequency trading, and scientific research, where speed and power efficiency are paramount. These specialized chips can command premium prices.\n\nFurthermore, the simplified process flow makes Cmos Fabrication ideal for **accelerating time-to-market for new memory technologies**. Companies can iterate and deploy new memory architectures faster, staying ahead in the rapidly evolving electronics landscape.\n\nOverall, the Cmos Fabrication technology supports any commercial endeavor that benefits from more cost-effective, higher-performing, and efficiently produced semiconductor memory, from consumer devices to enterprise-level infrastructure.","question":"What are the commercial applications of Cmos Fabrication?"},{"answer":"The Cmos Fabrication patent lays a strong foundation for future developments in semiconductor manufacturing, particularly as the industry continues to push the boundaries of miniaturization and efficiency.\n\nOne expected development is the **integration of this methodology with emerging materials and transistor architectures**. As novel materials (e.g., 2D materials, ferroelectrics) and advanced transistor designs (e.g., Gate-All-Around FETs) become more prevalent, the mask-reduction and precision-control principles of Cmos Fabrication could be adapted to simplify their complex manufacturing processes.\n\nAnother area of future development could involve **further automation and AI-driven process optimization**. By reducing the number of manual or semi-manual masking steps, the Cmos Fabrication approach lends itself well to highly automated fabs, where AI could be used to fine-tune spacer etch-back, implant doses, and other parameters for even greater precision and yield.\n\nWe might also see **extension of these mask-reduction techniques to other layers** beyond just transistor doping, further streamlining the entire chip fabrication stack. The core idea of reusing masks through intermediate geometric modifications could inspire similar innovations in other complex lithography-intensive steps. Ultimately, Cmos Fabrication is expected to contribute to a more sustainable, cost-effective, and high-performance future for microelectronics.","question":"What are the future developments expected for Cmos Fabrication?"}],"topics":["Cmos Fabrication","CMOS manufacturing","semiconductor patent","memory device fabrication","mask reduction","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Cmos Fabrication - Streamlined Memory Device Manufacturing Patent US-9852953","description":"Discover the Cmos Fabrication patent (US-9852953) for efficient memory device manufacturing. Reduces mask steps, improves precision, and lowers costs. Full analysis available.","keywords":["Cmos Fabrication","CMOS manufacturing","semiconductor patent","memory device fabrication","mask reduction","transistor doping","channel length control","US-9852953","chip manufacturing efficiency","H01L"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852953","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852953","citation_suggestion":"Patentable. \"CMOS fabrication\" (US-9852953). https://patentable.app/patents/US-9852953","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852953","json":"https://patentable.app/api/llm-context/US-9852953","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:28.310Z"}