{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852965","patent":{"patent_number":"US-9852965","title":"Semiconductor devices with through electrodes and methods of fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-07-07T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view."},"analysis":{"summary":"The patent titled \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" (US-9852965) introduces a groundbreaking methodology for fabricating advanced semiconductor devices, specifically focusing on the creation of highly reliable through electrodes. At its core, this innovation addresses the critical need for enhanced integration density and electrical performance in modern electronics by refining the process of vertical interconnect formation.\n\nThe primary problem this patent solves revolves around the complexities and limitations of conventional through-silicon via (TSV) fabrication. Existing methods often involve deep etching processes that can lead to structural stress, lower manufacturing yields, and reliability issues due to challenges in precise alignment and robust electrical contact. This invention offers a more elegant and robust solution to these longstanding industry challenges.\n\nTechnically, the approach involves a multi-stage fabrication sequence. Initially, a hollow cylindrical main via is formed on the top surface of a semiconductor substrate, connected to a metal line. An insulating layer then covers these structures. The key innovative step occurs when a portion of the semiconductor substrate is removed from the bottom surface, creating a via hole. Crucially, this via hole is designed to expose a specific portion of the main via's bottom surface, with its circumference overlapping that of the main via when viewed in a plan. This precise overlap ensures an exceptionally strong and stable electrical connection when the final through electrode is formed within this bottom-up via hole.\n\nFrom a business perspective, this technology offers significant value. By improving the reliability and potentially the yield of through-electrode fabrication, it reduces manufacturing costs and accelerates the development of advanced 3D integrated circuits. This translates into faster, smaller, and more power-efficient electronic devices, which are highly sought after in markets ranging from high-performance computing and AI to mobile communications and the Internet of Things (IoT). The enhanced precision and reduced risk of defects contribute directly to higher quality products and a competitive edge for adopters.\n\nThis patent opens up substantial market opportunities for manufacturers of advanced semiconductor components, packaging solutions, and electronic devices. It provides a foundational technology for next-generation products requiring high-density interconnects and superior electrical performance, positioning it as a key enabler for the continued growth and innovation in the global microelectronics industry.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're trying to build a skyscraper, and you need to run plumbing and electrical lines from the very top floor all the way down to the ground. In the world of computer chips, we're essentially doing the same thing, but on a microscopic scale. We stack layers of tiny electronic components, and we need to create vertical connections – like miniature elevators for electricity – to link them all together. These are called 'through electrodes' or Through-Silicon Vias (TSVs).\n\nHowever, making these tiny, precise vertical connections through extremely thin silicon wafers is incredibly difficult with traditional methods. It's like trying to drill a perfect, hair-thin hole through 100 sheets of paper stacked together without tearing any. These conventional techniques often lead to problems: the silicon can crack, the connections might not be perfectly straight, or the process is just too expensive and time-consuming, resulting in many wasted chips. This patent, \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same,\" directly tackles these inefficiencies and reliability issues, which are major bottlenecks in creating more powerful and compact electronic devices.\n\n### How Does It Work?\n\nInstead of trying to drill one perfect hole all the way through, this innovative patent proposes a smarter, two-part approach. Think of it like this:\n\nFirst, from the 'top' side of our silicon wafer (our stacked papers), we create a small, hollow cylinder – let's call it a 'mini-well.' This mini-well is already connected to some of the circuitry on the top layers.\n\nThen, we flip the wafer over. From the 'bottom' side, we carefully remove a tiny bit of material to create another hole. The clever part here is that this new 'bottom hole' is precisely positioned so that its edge *overlaps* with the bottom edge of our 'mini-well' from the top. It's like two tunnels dug from opposite sides, but instead of just meeting end-to-end, they interlock slightly, creating a much stronger and more reliable connection point.\n\nFinally, we fill this combined, interlocked space with a conductive material, forming a single, continuous, and robust 'through electrode.' This method ensures that the electrical path is incredibly strong and reliable, minimizing the chances of breaks or weak signals, and making the overall process less stressful for the delicate silicon material.\n\n### Why Does This Matter?\n\nThis technology matters immensely because it directly impacts the fundamental building blocks of almost all modern electronics. By making through electrodes more reliable and cost-effective to produce, \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" enables:\n\n*   **Smaller, More Powerful Devices:** We can pack more electronic components into a smaller space, leading to thinner smartphones, more compact wearables, and powerful, miniaturized sensors for everything from medical devices to smart cities.\n*   **Faster Performance:** More reliable and shorter vertical connections mean data can travel faster within a chip, boosting the performance of everything from artificial intelligence processors to high-speed data centers.\n*   **Improved Manufacturing Efficiency:** Fewer broken chips during manufacturing mean lower production costs and higher yields. This directly translates to more affordable and readily available advanced electronics for consumers and businesses.\n*   **Competitive Edge:** Companies that adopt this technology will gain a significant competitive advantage in the semiconductor market, allowing them to innovate faster and produce higher-quality, more advanced products.\n\n### What's Next?\n\nThe implications of this patent are far-reaching. It lays a crucial foundation for the next generation of 3D integrated circuits and advanced packaging. We can expect to see this method, or derivatives of it, becoming standard in the fabrication of high-performance memory, logic chips, and sensor arrays. This innovation will accelerate the development of more sophisticated AI hardware, enable truly ubiquitous IoT devices, and push the boundaries of computing power at the edge. For investors, this represents a key enabling technology for companies operating in the semiconductor manufacturing, advanced packaging, and high-tech electronics sectors, promising strong returns on investment as these markets continue their rapid expansion.","technical_analysis":"The patent \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" (US-9852965) presents a sophisticated and innovative method for creating through electrodes, which are critical components for 3D integrated circuits (3D ICs) and advanced semiconductor packaging. This technical analysis will delve into the architecture, implementation specifics, and performance implications of this invention.\n\n**Technical Architecture and Problem Context:**\nTraditional Through-Silicon Via (TSV) fabrication typically involves etching a deep trench through a silicon substrate, followed by dielectric liner deposition, barrier layer formation, and subsequent metal filling (e.g., copper electroplating). While conceptually straightforward, this process faces several engineering hurdles:\n\n1.  **Deep Etch Challenges:** High aspect ratio etching is prone to non-uniformity, micro-loading effects, and significant mechanical stress on the wafer, leading to warpage and potential cracking.\n2.  **Liner Conformality:** Achieving a conformal dielectric liner within deep, narrow vias is challenging but essential for electrical isolation and preventing metal diffusion.\n3.  **Void-Free Filling:** Ensuring complete, void-free metal filling in high aspect ratio vias is critical for electrical performance and reliability, yet difficult to achieve consistently.\n4.  **Via Reveal:** The backside thinning and via reveal process requires extremely precise control to expose the TSV bottom without damaging the surrounding silicon or the TSV itself.\n\nThis invention directly addresses these issues by proposing a novel, multi-stage, dual-sided fabrication approach that mitigates many of the inherent difficulties of single-pass deep etching.\n\n**Implementation Details and Method Specifics:**\n1.  **Substrate Provision:** The process begins with a semiconductor substrate having defined top and bottom surfaces. This is the foundational material, typically silicon.\n2.  **Main Via and Metal Line Formation (Top Surface):** A 'main via' is formed on the top surface. Crucially, this main via has a hollow cylindrical structure. This is a significant departure from solid-filled TSVs. A metal line is then connected to this main via, establishing initial electrical contact on the top layer. This step likely involves standard photolithography and etching techniques to define the via, followed by deposition and patterning of the metal line.\n3.  **Interlayered Insulating Layer:** An interlayered insulating layer is deposited on the top surface. This layer serves to electrically isolate the main via and the metal line from subsequent layers and potentially from the substrate itself if not already isolated. Materials like SiO2 or SiN are commonly used for this purpose, deposited via CVD or similar techniques.\n4.  **Substrate Removal and Via Hole Formation (Bottom Surface):** This is where the core innovation shines. A portion of the semiconductor substrate is removed from the bottom surface. This removal creates a 'via hole'. The purpose of this via hole is to *expose a portion of the bottom surface of the main via*. The critical geometric detail is that, when viewed in a plan view (i.e., looking down onto the chip), the circumference of this newly formed via hole *overlaps* a portion of the bottom surface of the main via. This overlapping region is key for ensuring a robust electrical connection. This step would likely involve backside grinding or chemical mechanical polishing (CMP) for thinning, followed by photolithography and etching (e.g., dry etching) from the backside to create the via hole.\n5.  **Through Electrode Formation:** Finally, a through electrode is formed within the via hole created from the bottom. This electrode is electrically connected to the exposed, overlapping portion of the main via. This step would involve deposition of conductive material (e.g., copper, tungsten) using techniques like electroplating, sputtering, or CVD, followed by planarization (e.g., CMP) to define the final electrode structure.\n\n**Performance Characteristics and Technical Advantages:**\n*   **Enhanced Electrical Reliability:** The overlapping geometry of the via hole and the main via's bottom surface provides a larger, more forgiving contact area compared to a simple butt joint. This reduces contact resistance and improves the robustness of the electrical connection, minimizing potential points of failure and improving signal integrity.\n*   **Reduced Fabrication Stress:** By creating a shallower main via from the top and exposing it from the bottom, the need for a single, very deep etch through the entire substrate is mitigated. This can significantly reduce mechanical stress on the wafer, leading to less warpage and fewer defects.\n*   **Higher Manufacturing Yields:** The combination of reduced stress, potentially simpler etching steps, and a more reliable electrical connection mechanism can collectively lead to higher manufacturing yields, translating to lower per-chip costs.\n*   **Improved Scalability:** The precision offered by the overlapping design, combined with reduced stress, makes this method highly suitable for fabricating smaller through electrodes on thinner wafers, which is essential for advanced technology nodes and higher integration densities.\n*   **Flexibility in Materials:** While not explicitly detailed, the method's modularity could potentially allow for flexibility in the choice of conductive materials for the main via and through electrode, depending on specific performance requirements.\n\nIn summary, this patent offers a technically sound and innovative solution to critical challenges in 3D IC fabrication. By strategically separating the formation of the top and bottom portions of the through electrode and ensuring a robust overlapping connection, this technology significantly advances the state-of-the-art in semiconductor device manufacturing, paving the way for more powerful and reliable electronic systems. The inherent efficiencies and reliability improvements position this innovation as a cornerstone for future microelectronic architectures.","business_analysis":"The patent \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" (US-9852965) represents a significant business opportunity within the rapidly expanding semiconductor industry. This innovation, focused on advanced fabrication methods for through electrodes, addresses critical market demands for increased performance, miniaturization, and cost-efficiency in integrated circuits. Its commercial applications and strategic implications are poised to impact various segments of the electronics ecosystem.\n\n**Market Opportunity Size and Growth Drivers:**\nThe global semiconductor market is a multi-trillion-dollar industry, with segments like advanced packaging and 3D ICs experiencing robust growth. The demand for higher integration density, faster data transfer, and lower power consumption in devices such as AI accelerators, high-performance computing (HPC) processors, 5G infrastructure components, automotive electronics, and IoT devices is driving this expansion. Through-Silicon Vias (TSVs) and similar through-electrode technologies are fundamental enablers for these advanced applications. This patent positions itself to capture a share of this burgeoning market by offering a superior fabrication method.\n\nThe market for 3D ICs and advanced packaging is projected to grow substantially, driven by the limitations of traditional 2D scaling and the need for heterogeneous integration. Any technology that can improve the yield, reliability, and cost-effectiveness of TSV-like structures will find strong adoption. This patent's method, by addressing these very pain points, stands to become a critical component in the supply chain for next-generation electronic components.\n\n**Competitive Advantages:**\nThis technology provides several distinct competitive advantages:\n\n1.  **Enhanced Reliability and Yield:** The unique overlapping design of the main via and via hole ensures a more robust and precise electrical connection. This inherently leads to higher device reliability and potentially higher manufacturing yields compared to traditional methods, which can suffer from defects due to deep etching and alignment challenges. For chip manufacturers, higher yield directly translates to lower per-unit costs and improved profitability.\n2.  **Reduced Manufacturing Complexity and Cost:** By simplifying critical steps in through-electrode formation and mitigating the stresses associated with deep etching, this method can reduce overall manufacturing complexity. This could lead to lower capital expenditure on specialized equipment or reduced operational costs, offering a significant cost advantage over competitors relying on less efficient processes.\n3.  **Scalability for Advanced Nodes:** As semiconductor technology progresses to smaller nodes and thinner wafers, the challenges of traditional TSV fabrication intensify. This patent's approach, with its reduced stress and precise alignment, is inherently more scalable for future generations of chips, offering a long-term competitive edge in advanced packaging.\n4.  **Faster Time-to-Market:** With improved reliability and potentially higher yields, manufacturers can accelerate their product development cycles, bringing new, high-performance devices to market faster, which is crucial in the fast-paced electronics industry.\n\n**Revenue Potential and Business Models:**\nCompanies leveraging this patent could generate revenue through:\n\n*   **Direct Manufacturing:** Semiconductor foundries and integrated device manufacturers (IDMs) can adopt this method to produce their own advanced 3D ICs, gaining a competitive edge in performance and cost.\n*   **Licensing:** The patent holder could license this technology to other foundries or packaging companies, earning royalties on its use. This is a common and highly profitable model for foundational process patents.\n*   **IP-Enabled Services:** Offering design services or consultation based on the optimized fabrication flow enabled by this patent.\n\n**Strategic Positioning:**\nThis innovation strategically positions its adopters at the forefront of advanced semiconductor packaging. It enables the creation of smaller, more powerful, and more energy-efficient chips, which are essential for leadership in AI, machine learning, edge computing, 5G, and beyond. Companies integrating this technology can differentiate their products based on superior performance, reliability, and form factor, capturing premium market segments.\n\n**ROI Projections:**\nWhile specific ROI will depend on adoption rates and market penetration, the value proposition is clear: reduced defect rates, higher yields, and potentially lower manufacturing costs directly impact the bottom line. For a high-volume chip manufacturer, even a modest improvement in yield can translate into millions or billions of dollars in savings and increased revenue. Furthermore, the ability to produce more advanced, reliable chips can open up new market segments and command higher average selling prices. This patent is a strong investment in future-proofing semiconductor manufacturing capabilities.\n\nIn conclusion, \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" offers a compelling business case for innovation in semiconductor fabrication. Its ability to solve critical technical challenges translates directly into significant commercial advantages, positioning it as a pivotal technology for the next wave of electronic device development.","faqs":[{"answer":"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same is a patented invention (US-9852965) that describes a novel and highly efficient way to manufacture advanced semiconductor devices. Specifically, it focuses on improving the creation of 'through electrodes,' which are tiny vertical electrical connections that pass through a semiconductor substrate, like a silicon wafer. These through electrodes are crucial for building modern 3D integrated circuits (3D ICs), allowing multiple layers of electronic components to be stacked closely together.\n\nThe patent introduces a unique fabrication process that addresses many limitations of traditional methods. Instead of drilling a single deep hole through the entire chip, this invention uses a two-part approach that results in a more robust and reliable connection. This innovation is fundamental to creating smaller, faster, and more powerful electronic devices.\n\nEssentially, this patent provides a blueprint for making the tiny 'wires' that go up and down through a layered computer chip, making them stronger, more reliable, and easier to produce. This is a critical step in the ongoing miniaturization and performance enhancement of all kinds of electronics, from your smartphone to advanced AI processors. Its significance lies in enabling the next generation of compact and high-performance microelectronic systems. Keywords: semiconductor devices, through electrodes, patent US-9852965, 3D ICs, fabrication method.","question":"What is Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same?"},{"answer":"The core of how Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same works lies in its innovative, dual-sided fabrication process. It's a multi-step method designed to create a highly reliable electrical connection through a semiconductor substrate.\n\nFirst, a 'main via' is formed on the top surface of the semiconductor substrate. This main via has a hollow cylindrical structure and is connected to a metal line on that top surface. Think of it as creating a small, open-ended conductive pipe on the surface of your chip.\n\nNext, an interlayered insulating layer is applied over the top surface, covering the main via and the metal line. This ensures electrical isolation. The crucial innovative step then occurs: a portion of the semiconductor substrate is removed from the *bottom* surface, creating a 'via hole.' This via hole is precisely positioned to expose a specific part of the main via's bottom surface. What's ingenious is that, when viewed from a top-down perspective, the circumference of this bottom-up via hole *overlaps* the bottom surface of the main via. This overlapping geometry is key to the invention's reliability.\n\nFinally, a through electrode is formed within this precisely aligned via hole, which electrically connects to the exposed, overlapping portion of the main via. This completes the vertical electrical pathway through the chip. This two-part, overlapping approach significantly reduces stress on the substrate and ensures a robust, low-resistance connection. Keywords: fabrication process, main via, via hole, overlapping geometry, electrical connection, semiconductor manufacturing.","question":"How does Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same work?"},{"answer":"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same solves several critical problems inherent in traditional methods of manufacturing through electrodes, particularly in the context of 3D integrated circuits (3D ICs).\n\nHistorically, creating vertical electrical connections (Through-Silicon Vias or TSVs) through thin silicon wafers has been fraught with challenges. Conventional processes often involve deep etching that can induce significant mechanical stress, leading to wafer warpage, cracks, and other structural defects. This directly impacts manufacturing yield, increasing costs and limiting the scalability of 3D integration. Furthermore, achieving precise alignment and a consistently robust electrical contact at the bottom of these deep vias is difficult, often leading to reliability issues or intermittent connections.\n\nThis patent directly addresses these issues by proposing a fabrication method that reduces stress, improves connection reliability through its unique overlapping design, and potentially simplifies certain complex etching steps. By mitigating these problems, the invention enables the more efficient, cost-effective, and reliable production of advanced semiconductor devices, thereby unlocking greater miniaturization and performance potential. Keywords: TSV challenges, manufacturing problems, reliability issues, 3D ICs, semiconductor stress, yield improvement.","question":"What problem does Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same solve?"},{"answer":"The patent US-9852965, titled \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same,\" does not list specific inventors or an assignee in the provided abstract data. However, patents are typically the result of significant research and development efforts by a team of engineers and scientists within a semiconductor company or research institution.\n\nThese innovations are often the culmination of years of work aimed at solving complex manufacturing challenges in microelectronics. While the specific individuals are not publicly listed in this excerpt, their collective expertise in materials science, electrical engineering, and semiconductor process technology would have been essential in conceiving and developing this groundbreaking fabrication method. The invention represents a significant contribution to the field of advanced semiconductor packaging and device architecture. Keywords: patent inventor, assignee, semiconductor research, microelectronics development, US-9852965.","question":"Who invented Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same?"},{"answer":"The patent Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same offers several key benefits that are crucial for the advancement of modern electronics:\n\n1.  **Enhanced Reliability:** The unique overlapping geometry of the main via and the bottom-up via hole ensures a highly robust and precise electrical connection. This significantly reduces the risk of intermittent contacts or failures, leading to more reliable devices over their lifespan.\n2.  **Higher Manufacturing Yields:** By mitigating the mechanical stress associated with deep etching and providing a more reliable connection mechanism, the fabrication process is less prone to defects. This translates directly into higher manufacturing yields, meaning more usable chips per wafer and reduced production costs.\n3.  **Improved Electrical Performance:** Robust and low-resistance through electrodes are essential for high-speed data transfer and efficient power delivery in 3D ICs. This innovation contributes to better signal integrity and overall device performance.\n4.  **Greater Miniaturization and Integration Density:** The improved reliability and efficiency of through electrodes enable the stacking of more layers and denser integration of components, leading to smaller, more compact, and powerful electronic devices.\n5.  **Cost-Effectiveness:** Reduced defects and potentially streamlined process steps contribute to lower overall manufacturing costs, making advanced 3D packaging more economically viable for a wider range of applications. Keywords: key benefits, enhanced reliability, higher yield, electrical performance, miniaturization, cost-effective, advanced packaging.","question":"What are the key benefits of Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same?"},{"answer":"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same distinguishes itself significantly from prior art in through-electrode (TSV) fabrication primarily through its novel, dual-sided, and geometrically optimized approach. Traditional TSV methods typically involve creating a single, deep via hole through the entire silicon substrate using techniques like Deep Reactive-Ion Etching (DRIE).\n\nThis prior art approach often leads to challenges such as high mechanical stress on the wafer, difficulty in achieving uniform etching for high aspect ratios, and complexities in ensuring void-free metal filling and precise backside via reveal. These issues contribute to lower yields and reliability concerns. In contrast, this patent's innovation begins with a hollow cylindrical 'main via' formed on the top surface, connected to a metal line.\n\nThe critical difference lies in the subsequent step where a 'via hole' is formed from the *bottom* surface, exposing a portion of the main via's bottom. Uniquely, the circumference of this bottom-up via hole *overlaps* the bottom surface of the main via when viewed in a plan. This overlapping geometry provides a much more robust and forgiving electrical contact area than a simple butt joint. This design choice inherently reduces stress, improves connection reliability, and potentially simplifies complex etching steps, making it a superior and more scalable method compared to many conventional TSV processes. Keywords: prior art, TSV comparison, unique advantages, overlapping design, fabrication difference, stress reduction, reliability improvement.","question":"How is Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same different from prior art?"},{"answer":"The patent Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same is poised to have a transformative impact across a wide range of industries that rely heavily on advanced electronic components. Its ability to enable more reliable, compact, and powerful chips makes it a foundational technology for numerous sectors.\n\n**Information Technology and High-Performance Computing (HPC):** This includes data centers, cloud computing, and supercomputers. The enhanced through electrodes will lead to faster processors, higher-bandwidth memory, and more efficient data transfer, crucial for handling massive datasets and complex computations.\n\n**Artificial Intelligence (AI) and Machine Learning (ML):** AI accelerators and specialized ML chips will benefit immensely from denser integration and improved performance, enabling faster training and inference for AI models, both in the cloud and at the edge.\n\n**Consumer Electronics:** Smartphones, tablets, wearables, and gaming consoles will become thinner, lighter, more powerful, and have longer battery lives due to the increased integration density and efficiency of chips.\n\n**Automotive Industry:** Autonomous vehicles, advanced driver-assistance systems (ADAS), and in-car infotainment systems require highly reliable and powerful processors. This technology contributes to the robustness and performance needed for safety-critical applications.\n\n**Internet of Things (IoT):** The ability to create smaller, more reliable, and energy-efficient chips is vital for the proliferation of IoT devices, from smart home sensors to industrial monitoring equipment.\n\n**Telecommunications:** 5G and future wireless communication infrastructure, requiring high-speed data processing and efficient power management, will leverage these advanced semiconductor devices. Keywords: industry impact, AI, HPC, consumer electronics, automotive, IoT, 5G, microelectronics applications.","question":"What industries will Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same impact?"},{"answer":"The patent titled \"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same\" (US-9852965) has specific dates associated with its lifecycle.\n\nAccording to the provided patent data, the **Filing Date** for this patent was **2016-07-07**. This is the date when the patent application was officially submitted to the patent office, initiating the examination process.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent application, after undergoing examination and approval, was officially published and granted as a patent. This marks the point at which the invention's details become publicly accessible and the patent holder gains exclusive rights to the invention. These dates are crucial for understanding the patent's legal standing and its position within the timeline of semiconductor technology development. Keywords: filing date, publication date, patent timeline, US-9852965, patent lifecycle, semiconductor innovation history.","question":"When was Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same filed/granted?"},{"answer":"The commercial applications of Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same are extensive, underpinning the next generation of high-performance and compact electronic systems across various sectors. This patent's innovation in reliable through-electrode fabrication directly translates into tangible product advantages.\n\n**Advanced Processors (CPUs, GPUs, AI Accelerators):** Manufacturers of high-performance processors can utilize this technology to create denser, faster, and more power-efficient chips. This is critical for servers, workstations, gaming PCs, and specialized AI hardware, enabling breakthroughs in data processing capabilities.\n\n**High Bandwidth Memory (HBM):** This invention is highly applicable to the production of HBM, which uses 3D stacking of memory dies with TSVs to achieve extremely high data transfer rates. Improved through electrodes will lead to more reliable and higher-capacity HBM modules, essential for graphics cards and HPC systems.\n\n**Mobile Devices and Wearables:** The ability to create more compact and efficient chips will lead to thinner, lighter smartphones, smartwatches, and other portable devices with enhanced functionality and longer battery life.\n\n**Sensors and IoT Devices:** For the Internet of Things, miniaturization, reliability, and low power consumption are paramount. This technology enables the integration of multiple sensor types into tiny, robust packages, facilitating smart homes, industrial IoT, and medical wearables.\n\n**Automotive Electronics:** Modern vehicles are increasingly reliant on complex electronic control units (ECUs) for everything from engine management to autonomous driving. This patent's reliable through electrodes can contribute to the robustness and performance of these mission-critical components.\n\nEssentially, any product requiring high-density, high-performance, or miniaturized integrated circuits stands to benefit from the manufacturing advancements detailed in Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same. Keywords: commercial applications, HBM, mobile devices, AI accelerators, IoT sensors, automotive electronics, advanced packaging products.","question":"What are the commercial applications of Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same?"},{"answer":"Future developments for Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same are likely to focus on further optimization, integration, and expansion of its application scope within advanced microelectronics. As the industry continues its push towards higher integration and novel architectures, this patent's foundational methodology will evolve.\n\nOne key area of development will be **material optimization**. Research may focus on alternative conductive materials for the main via and through electrode to further enhance electrical performance, thermal conductivity, or compatibility with new substrate materials. Similarly, insulating layer materials could be refined for even better conformality and dielectric properties in these unique geometries.\n\n**Process integration** will also be crucial. Expect efforts to seamlessly integrate this fabrication method into existing and emerging 3D heterogeneous integration flows, where different types of dies (e.g., logic, memory, analog, RF) are stacked. This could involve developing specific bonding techniques and stress management strategies tailored to the unique characteristics of the through electrodes formed by this patent.\n\nFurthermore, **scaling and density improvements** will continue. As chip features shrink, the method will be refined to create even smaller and denser through electrodes with maintained or improved reliability. This will be essential for future generations of AI hardware, quantum computing components, and ultra-miniaturized devices. The principles of this patent could also inspire new variations for creating other types of vertical interconnects or structures within advanced packaging. Ultimately, Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same is expected to become a cornerstone technology, enabling the creation of increasingly sophisticated and efficient electronic systems for decades to come. Keywords: future developments, material optimization, process integration, scaling improvements, 3D heterogeneous integration, advanced packaging trends, microelectronics evolution.","question":"What are the future developments expected for Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same?"}],"topics":["semiconductor devices","through electrodes","TSV technology","chip fabrication","semiconductor manufacturing","technical","background","relentless"],"tech_cluster":null},"seo":{"title":"Advanced Semiconductor Devices with Through Electrodes - US-9852965","description":"Semiconductor Devices with Through Electrodes and Methods of Fabricating the Same: a patent for advanced chip design. Innovative through electrodes boost performance and miniaturization.","keywords":["semiconductor devices","through electrodes","TSV technology","chip fabrication","semiconductor manufacturing","integrated circuits","advanced packaging","3D integration","patent US-9852965","electronics innovation","semiconductor design","microelectronics"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852965","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852965","citation_suggestion":"Patentable. \"Semiconductor devices with through electrodes and methods of fabricating the same\" (US-9852965). https://patentable.app/patents/US-9852965","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852965","json":"https://patentable.app/api/llm-context/US-9852965","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:59.409Z"}