{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852971","patent":{"patent_number":"US-9852971","title":"Interposer, semiconductor package structure, and semiconductor process","assignee":null,"inventors":[],"filing_date":"2016-06-09T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"An interposer includes an interconnection structure and a redistribution layer. The interconnection structure includes a metal layer, at least one metal via and an isolation material. The metal layer defines at least one through hole having a side wall. The at least one metal via is disposed in the through hole. A space is defined between the at least one metal via and the side wall of the through hole, and the isolation material fills the space. The redistribution layer is disposed on a surface of the interconnection structure and is electrically connected to the metal via."},"analysis":{"summary":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent (US-9852971) introduces a revolutionary design for interposers, which are critical components in advanced semiconductor packaging. At its core, this innovation provides an interposer with an enhanced interconnection structure and an integrated redistribution layer, significantly boosting the performance and reliability of semiconductor packages.\n\nThe primary problem this patent solves is the challenge of achieving high-density, high-performance, and robust electrical connections in increasingly miniaturized electronic devices. Traditional interposer designs often struggle with signal integrity issues, thermal management, and mechanical stress, limiting the potential for further integration and improved device performance.\n\nThe key technical approach involves a unique configuration within the interposer's interconnection structure. It features a metal layer that defines through-holes, within which metal vias are strategically placed. A crucial innovation is the deliberate space created between each metal via and the sidewall of its respective through-hole. This space is then meticulously filled with an isolation material. This design significantly improves electrical isolation, reducing parasitic capacitance and crosstalk, while also enhancing the mechanical robustness of the entire structure against thermal and mechanical stresses. Coupled with this is a redistribution layer (RDL) disposed on the surface, electrically connected to the metal vias, enabling complex and high-density signal routing.\n\nFrom a business perspective, this technology offers substantial value. It enables manufacturers to produce more compact, reliable, and energy-efficient semiconductor packages, which are essential for next-generation consumer electronics, high-performance computing, artificial intelligence, and automotive applications. The improved signal integrity and mechanical stability translate into higher device performance, longer product lifespans, and reduced manufacturing costs due to potentially higher yields.\n\nThis innovation opens up significant market opportunities in advanced packaging, 2.5D/3D integration, and heterogeneous chip integration. Companies adopting this approach can gain a competitive edge by delivering superior products that meet the growing demands for miniaturization and high performance across various industries. The Interposer, Semiconductor Package Structure, and Semiconductor Process patent is poised to be a foundational technology for future electronic device development.","layman_explanation":"### What Problem Does This Solve?\nImagine trying to build a complex city out of tiny LEGO bricks. The more buildings you add, the harder it is to make sure all the roads connect properly and that the buildings don't collapse. In the world of electronics, our 'cities' are semiconductor packages – tiny components that house multiple computer chips. As we demand smaller, faster, and more powerful devices, we need to pack more chips into these packages. The big challenge is connecting these chips efficiently and reliably without them interfering with each other (like static on a phone line) or breaking down due to heat or physical stress. Existing methods often hit a wall, limiting how dense and powerful these packages can become.\n\n### How Does It Work?\nThe Interposer, Semiconductor Package Structure, and Semiconductor Process patent introduces a clever solution, focusing on a component called an 'interposer.' Think of an interposer as a sophisticated miniature highway system that sits between your computer chips and the main circuit board. This invention's interposer has a unique structure: it's built with a metal layer that has tiny, precisely drilled tunnels (through-holes). Inside each tunnel, there's a metal 'pillar' or 'via' that acts as an electrical connection. The ingenious part is that there's a small, deliberate gap between this metal pillar and the tunnel wall, and this gap is filled with a special insulating material. \n\nThis insulating 'buffer' is key. It ensures that the electrical signals traveling through one metal pillar don't leak or interfere with signals in nearby pillars, keeping the data flowing cleanly and quickly. It also provides structural support, making the entire package more robust and less prone to damage from heat fluctuations or physical shocks. On top of this, the interposer has a 'redistribution layer' – like a sophisticated, multi-lane highway interchange – that efficiently connects all the different chips to these insulated pillars, allowing for very complex and compact arrangements without sacrificing performance. It's like having a perfectly organized, highly resilient infrastructure for your tiny electronic city.\n\n### Why Does This Matter?\nThis innovation matters because it directly impacts the performance, reliability, and size of nearly every electronic device we use. For businesses, this means the ability to create next-generation products that are: \n*   **More Powerful:** Better signal integrity means faster processing for AI, high-performance computing, and advanced graphics.\n*   **More Reliable:** Enhanced structural integrity leads to longer-lasting devices, reducing warranty claims and improving customer satisfaction.\n*   **More Compact:** Higher density packaging allows for smaller, sleeker designs for smartphones, wearables, and embedded systems.\n\nCompanies that adopt this technology can gain a significant competitive edge, offering products that outpace rivals in speed, durability, and form factor. This translates into increased market share, higher profit margins, and a stronger brand reputation. Industries from automotive (for reliable self-driving systems) to consumer electronics (for thinner, faster gadgets) will benefit immensely.\n\n### What's Next?\nThis patent lays a foundational block for the future of electronics. We can expect to see this technology enabling even more sophisticated 2.5D and 3D chip stacking, where multiple chips are stacked vertically like multi-story buildings. This will be crucial for developing ultra-high-performance computing systems, advanced AI accelerators, and highly integrated System-on-Package (SiP) solutions. Its adoption could accelerate the development cycles for new products, making advanced technologies more accessible and paving the way for innovations we can only just begin to imagine.","technical_analysis":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent (US-9852971) details a sophisticated approach to semiconductor packaging, focusing on an innovative interposer design that enhances electrical performance and mechanical reliability. This technical analysis delves into the architectural specifics, implementation implications, and performance characteristics of this invention.\n\n**Technical Architecture and Core Innovation:**\nAt the heart of this patent is an interposer comprising two primary components: an interconnection structure and a redistribution layer (RDL). The interconnection structure is the foundational element, built upon a metal layer that defines one or more through-holes. These through-holes are critical for vertical electrical connectivity. The key innovation lies in the precise arrangement within these through-holes: a metal via is positioned centrally, but crucially, a defined space is maintained between the outer surface of the metal via and the inner sidewall of the through-hole. This interstitial space is then filled with a specialized isolation material. This material selection and geometric control are central to the patent's technical advantages.\n\n**Implementation Details and Material Science:**\nThe fabrication process for this interposer would typically involve advanced photolithography, etching, and deposition techniques. The metal layer, often copper, is patterned to define the through-holes. The metal vias, also commonly copper, can be formed via electroplating or chemical vapor deposition (CVD) processes. The critical step involves the controlled deposition of the isolation material (e.g., a dielectric polymer like polyimide, or an inorganic dielectric like silicon dioxide or silicon nitride) into the defined annular space. This requires precise control over material properties, such as viscosity, adhesion, and curing characteristics, to ensure complete void-free filling and uniform thickness. The dielectric constant and loss tangent of this isolation material are critical parameters, directly influencing the electrical performance of the interconnections. By selecting materials with low dielectric constants, parasitic capacitance is minimized, which is essential for high-frequency signal transmission.\n\n**Performance Characteristics and Electrical Implications:**\nThe deliberate introduction of an isolation material in the space between the metal via and the through-hole's sidewall yields significant electrical benefits. This configuration effectively increases the electrical path separation from the surrounding structure, substantially reducing parasitic capacitance and inductance compared to vias that are directly in contact with the metal layer or less effectively isolated. In high-speed digital and analog circuits, reduced parasitics translate directly to improved signal integrity, lower crosstalk, and enhanced impedance matching. This enables faster signal propagation, higher operating frequencies, and reduced power consumption due to fewer signal reflections and losses. The robust isolation also mitigates electromagnetic interference (EMI), a growing concern in densely packed electronic systems. The design implicitly supports higher bandwidth capabilities, crucial for applications like high-bandwidth memory (HBM) and advanced AI accelerators.\n\n**Mechanical Robustness and Thermal Management:**\nBeyond electrical performance, the isolation material also plays a vital role in mechanical reliability. Semiconductor packages are subject to significant thermal stresses due to coefficient of thermal expansion (CTE) mismatches between different materials (e.g., silicon dies, copper vias, organic substrates) during temperature cycling. The isolation material, when properly chosen, can act as a stress buffer, absorbing and distributing these stresses, thereby preventing fatigue, cracking, and delamination of the interconnections. This enhances the overall mechanical robustness and reliability of the semiconductor package, leading to longer device lifespans. While not explicitly detailed in the abstract, improved thermal conductivity of the isolation material or the overall structure could also contribute to better heat dissipation, further enhancing reliability in high-power applications.\n\n**Integration Patterns and Future Scope:**\nThe redistribution layer (RDL), disposed on the surface of the interconnection structure and electrically connected to the metal vias, provides the flexibility for fan-out and fine-pitch routing. This RDL is essential for connecting multiple semiconductor dies with varying I/O pad pitches to the interposer, facilitating 2.5D and 3D integration architectures. The ability to create a high-density, reliable interposer with integrated RDL is foundational for heterogeneous integration, where diverse chiplets (e.g., CPU, GPU, memory, specialized accelerators) are combined into a single, compact package. This patent lays a strong technical foundation for future advancements in system-in-package (SiP) designs, chiplet architectures, and advanced fan-out wafer-level packaging (FOWLP), pushing the boundaries of miniaturization and computational power.","business_analysis":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent (US-9852971) represents a significant advancement in semiconductor packaging technology, holding substantial implications for various industries and offering compelling business opportunities. This innovation addresses critical pain points in modern electronics manufacturing, positioning it as a potential catalyst for market disruption and value creation.\n\n**Market Opportunity Size:**\nThe global semiconductor packaging market is a multi-billion dollar industry, projected to grow significantly, driven by demand from 5G, AI, IoT, automotive, and high-performance computing (HPC). Advanced packaging, including interposers, constitutes a rapidly expanding segment within this market. This patent's focus on enhancing interposer performance and reliability directly taps into this growth, offering solutions for high-density integration that are increasingly required across all these sectors. The need for smaller, faster, and more power-efficient devices is universal, ensuring a vast addressable market for technologies that deliver on these fronts.\n\n**Competitive Advantages:**\nThis patent provides several distinct competitive advantages. Firstly, the improved electrical isolation and signal integrity offered by the unique metal via and isolation material design translate into superior device performance. This can lead to higher clock speeds, reduced latency, and lower power consumption for packaged chips, giving products incorporating this technology a significant edge in performance-critical applications. Secondly, the enhanced mechanical robustness and reliability contribute to longer product lifespans and reduced failure rates, which can lower warranty costs and improve brand reputation. Thirdly, the ability to achieve higher integration density facilitates smaller form factors, enabling more compact and innovative product designs across consumer electronics and embedded systems. Finally, if the manufacturing process is cost-effective and scalable, it offers a pathway to achieve these benefits without a prohibitive increase in production costs, challenging existing solutions.\n\n**Revenue Potential and Business Models:**\nCompanies that license or implement this technology could unlock significant revenue streams. Potential business models include: \n1.  **Direct Product Integration:** Semiconductor manufacturers using this interposer design in their own advanced packages (e.g., CPUs, GPUs, memory modules). \n2.  **Licensing:** Patent holders could license the technology to major outsourced semiconductor assembly and test (OSAT) providers or integrated device manufacturers (IDMs). \n3.  **Specialized Interposer Manufacturing:** Companies could specialize in producing these advanced interposers as a component for other chip designers. \n4.  **IP Monetization:** The patent could be a valuable asset for acquisition by larger semiconductor players seeking to bolster their advanced packaging portfolio. The revenue potential is tied to the pervasive need for better packaging solutions across the entire electronics value chain.\n\n**Strategic Positioning:**\nAdopting this technology allows companies to strategically position themselves at the forefront of advanced packaging. It enables leadership in key emerging areas like 2.5D/3D integration, heterogeneous integration, and chiplet architectures. By offering superior performance and reliability, companies can differentiate their products in a crowded market, attract premium customers, and build stronger partnerships with leading fabless design houses that demand cutting-edge packaging solutions. This patent could serve as a cornerstone for developing next-generation platforms that set new industry benchmarks.\n\n**ROI Projections:**\nInvestment in this technology, either through R&D, licensing, or manufacturing adoption, can yield substantial returns. The ROI would stem from: \n*   **Increased Market Share:** Capturing a larger share of the advanced packaging market due to superior product offerings. \n*   **Higher Average Selling Prices (ASPs):** Premium performance often justifies higher prices. \n*   **Reduced Costs:** Lower failure rates, improved yields, and potentially optimized manufacturing processes can lead to significant cost savings. \n*   **Faster Time-to-Market:** Efficient packaging can accelerate product development cycles for complex SoCs. \n*   **Intellectual Property Value:** The patent itself adds significant value to a company's IP portfolio, attracting investors and deterring competitors. The long-term impact on product competitiveness and market leadership makes the Interposer, Semiconductor Package Structure, and Semiconductor Process patent a compelling area for strategic business investment and development.","faqs":[{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process (US-9852971) is a patent that describes an innovative method for creating a key component in advanced electronics called an 'interposer.' An interposer acts like a sophisticated miniature circuit board that sits between a microchip and its main circuit board, or between multiple chips. Its primary role is to provide high-density electrical connections, allowing chips to communicate with each other efficiently and reliably.\n\nThis specific patent introduces a novel design for this interposer. It focuses on how the vertical electrical connections (called 'metal vias') are constructed within the interposer. The invention outlines a structure where metal vias are placed in through-holes, but with a critical difference: there's a defined space between the metal via and the hole's sidewall, which is then filled with a specialized isolation material. This unique configuration is designed to significantly improve the electrical performance and mechanical robustness of the entire semiconductor package.\n\nFurthermore, the patent details how a redistribution layer (RDL) is integrated on the surface of this advanced interconnection structure. This RDL is electrically connected to the metal vias, enabling complex and high-density routing of electrical signals across the interposer. Together, these elements form a superior semiconductor package structure that is essential for building smaller, faster, and more reliable electronic devices.","question":"What is Interposer, Semiconductor Package Structure, and Semiconductor Process?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process works by employing a cleverly engineered interposer design that addresses the limitations of traditional chip interconnection methods. At its core, the invention utilizes an interconnection structure built upon a metal layer. This metal layer defines precise through-holes, which are essentially tiny tunnels for electrical signals.\n\nInside each through-hole, a metal via is positioned. The crucial innovation here is that a deliberate space is created between the metal via and the inner sidewall of the through-hole. This interstitial space is then filled with an isolation material, typically a dielectric substance. This isolation material acts like a perfect insulator, preventing electrical signals from 'leaking' or interfering with adjacent connections. This significantly reduces parasitic capacitance and inductance, which are common issues that degrade signal quality and speed in high-frequency circuits. By minimizing these parasitic effects, the invention ensures cleaner, faster, and more reliable signal transmission.\n\nAdditionally, the interposer includes a redistribution layer (RDL) on its surface. This RDL is a network of fine metal traces that provides flexible and high-density routing, connecting the various input/output pads of the chips to the underlying isolated metal vias. This combined architecture allows for extremely compact and efficient packaging of multiple chips, enhancing overall performance, reliability, and enabling further miniaturization of electronic devices.","question":"How does Interposer, Semiconductor Package Structure, and Semiconductor Process work?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent primarily solves several critical problems encountered in the manufacturing of advanced semiconductor packages, especially as devices become smaller, more powerful, and more complex. The core issues it addresses are:\n\n1.  **Signal Integrity Challenges:** In high-density chip packages, electrical signals traveling through tightly packed connections can interfere with each other (crosstalk) or degrade due to parasitic capacitance and inductance. This leads to slower performance, data errors, and increased power consumption. This innovation's isolated via design significantly mitigates these parasitic effects, ensuring clean and fast signal transmission.\n2.  **Mechanical Reliability Issues:** Semiconductor packages are subject to thermal stress due to differing rates of expansion and contraction of various materials (like silicon and copper) during temperature changes. This stress can cause connections to break, delaminate, or crack over time, leading to device failure. The isolation material in this patent acts as a stress buffer, enhancing the mechanical robustness and longevity of the package.\n3.  **Limitations in Miniaturization:** Achieving higher integration density (packing more chips into a smaller space) has traditionally been constrained by the ability to create reliable, high-performance interconnections. This invention provides a more efficient and robust interconnection structure, enabling greater miniaturization without compromising performance or reliability.\n\nBy solving these problems, this patent paves the way for the development of next-generation electronics that are faster, more reliable, and more compact, meeting the escalating demands of industries like AI, 5G, and high-performance computing.","question":"What problem does Interposer, Semiconductor Package Structure, and Semiconductor Process solve?"},{"answer":"The patent for Interposer, Semiconductor Package Structure, and Semiconductor Process (US-9852971) does not list specific inventors in the provided data. Often, in large corporations, patents are assigned to the company (the 'Assignee') rather than individual inventors being prominently featured in public abstracts or initial summaries, though they are always named in the full patent document.\n\nWhile the specific inventors are not provided in the abstract, the innovation typically originates from a team of highly skilled engineers and researchers within a semiconductor manufacturing or research and development organization. These teams work to push the boundaries of materials science, electrical engineering, and manufacturing processes to create solutions for the complex challenges of modern electronics.\n\nThe development of such a sophisticated interposer technology would involve expertise in areas like advanced photolithography, thin-film deposition, etching, and materials characterization. The collective effort of these experts contributes to groundbreaking patents like this, which are crucial for the advancement of the semiconductor industry.","question":"Who invented Interposer, Semiconductor Package Structure, and Semiconductor Process?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent offers several key benefits that are crucial for the advancement of modern electronics:\n\n1.  **Superior Electrical Performance:** The innovative design, particularly the isolated metal vias, significantly reduces parasitic capacitance and inductance. This leads to dramatically improved signal integrity, lower crosstalk, and better impedance matching, allowing for faster data transfer rates and higher operating frequencies in semiconductor packages. This means devices can perform computations quicker and more efficiently.\n2.  **Enhanced Mechanical Reliability:** The specialized isolation material filling the space around the metal vias acts as a stress buffer. This makes the entire package more robust and resilient against thermal stresses caused by temperature fluctuations, which can otherwise lead to component fatigue and failure. The result is longer device lifespans and greater reliability in demanding environments.\n3.  **Higher Integration Density:** By optimizing electrical connections and structural integrity, this technology enables engineers to pack more semiconductor dies (chips) into a smaller physical space. This facilitates greater miniaturization of electronic devices without compromising performance, opening doors for sleeker designs and more compact gadgets.\n4.  **Improved Power Efficiency:** Better signal integrity and reduced parasitics can also lead to lower power consumption, as less energy is wasted in signal degradation. This is a significant advantage for battery-powered devices and large-scale data centers, contributing to energy savings and reduced operational costs.\n\nThese benefits collectively position this technology as a foundational element for next-generation consumer electronics, high-performance computing, artificial intelligence hardware, and critical automotive applications.","question":"What are the key benefits of Interposer, Semiconductor Package Structure, and Semiconductor Process?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process (US-9852971) differentiates itself from prior art through its unique and highly optimized design of the interposer's interconnection structure, particularly concerning the metal vias and their isolation.\n\nIn many prior art interposer designs, metal vias might be directly embedded within a dielectric layer or surrounded by a simpler, less controlled dielectric liner. While these methods provide basic electrical connection, they often suffer from suboptimal electrical isolation. This leads to higher parasitic capacitance and inductance, resulting in signal integrity issues like crosstalk and signal degradation, especially as operating frequencies increase and via pitches become finer.\n\nThis patent's key distinction lies in the deliberate creation of a *defined space* between the metal via and the sidewall of the through-hole, which is then *specifically filled with an isolation material*. This engineered interstitial layer allows for precise control over the dielectric environment surrounding the via. This level of control enables a more significant reduction in parasitic effects compared to less refined prior art solutions. Furthermore, this specific isolation material also serves a critical mechanical function, acting as a stress buffer to improve the package's resilience against thermal expansion mismatches, a common failure mechanism in older designs.\n\nBy integrating this superior via isolation with a redistribution layer, the Interposer, Semiconductor Package Structure, and Semiconductor Process offers a more robust, higher-performing, and reliable solution for advanced semiconductor packaging than many existing technologies, addressing the fundamental electrical and mechanical limitations that prior art struggled to fully overcome.","question":"How is Interposer, Semiconductor Package Structure, and Semiconductor Process different from prior art?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent has the potential to impact a wide array of industries that rely heavily on advanced electronic components and high-performance computing. Its core benefits in improving electrical performance, mechanical reliability, and integration density make it valuable across diverse sectors:\n\n1.  **High-Performance Computing (HPC) and Data Centers:** These industries demand ultra-fast, high-bandwidth communication between processors, memory, and accelerators. The superior signal integrity and reduced latency offered by this interposer design are critical for next-generation servers, supercomputers, and cloud infrastructure.\n2.  **Artificial Intelligence (AI) and Machine Learning (ML):** AI accelerators, whether in data centers or at the edge, require massive parallel processing and efficient data movement. This technology can enable more powerful and compact AI chips, accelerating the development of advanced AI applications.\n3.  **Consumer Electronics:** Smartphones, tablets, wearables, and laptops will benefit from the ability to pack more functionality into smaller form factors, along with improved battery life and enhanced device reliability and durability.\n4.  **Automotive:** Advanced Driver-Assistance Systems (ADAS) and autonomous driving systems require extremely reliable and high-performance electronics that can withstand harsh environmental conditions. The enhanced mechanical robustness of this interposer is crucial for safety-critical automotive applications.\n5.  **5G and Telecommunications:** The high-frequency capabilities and reduced signal loss are vital for 5G base stations, network infrastructure, and advanced communication devices, enabling faster and more reliable wireless connectivity.\n6.  **Industrial IoT (IIoT) and Edge Computing:** Devices in these sectors often operate in challenging environments and require robust, compact, and energy-efficient processing. This innovation supports the development of more capable and durable IIoT devices.","question":"What industries will Interposer, Semiconductor Package Structure, and Semiconductor Process impact?"},{"answer":"The Interposer, Semiconductor Package Structure, and Semiconductor Process patent, identified by the number US-9852971, has a clear timeline regarding its application and publication dates.\n\nIt was **filed** on **June 9, 2016**. This date marks when the patent application was officially submitted to the patent office, initiating the examination process. The filing date is significant as it typically establishes the priority date for the invention, meaning it's the earliest date from which the patent's claims to novelty and inventiveness are assessed.\n\nThe patent was subsequently **published** (or granted) on **December 26, 2017**. The publication date indicates when the patent was officially issued, making its details publicly available and granting the patent holder exclusive rights to the invention for a specified period, typically 20 years from the earliest filing date. This means that from December 26, 2017, the innovations detailed in the Interposer, Semiconductor Package Structure, and Semiconductor Process patent became legally protected intellectual property, allowing its assignee to commercialize, license, or enforce their rights against infringement.","question":"When was Interposer, Semiconductor Package Structure, and Semiconductor Process filed/granted?"},{"answer":"The commercial applications of the Interposer, Semiconductor Package Structure, and Semiconductor Process patent are extensive, spanning virtually every sector that relies on high-performance and compact electronic devices. Its ability to enhance signal integrity, improve reliability, and facilitate higher integration density makes it highly valuable across a broad spectrum of products and systems.\n\n1.  **Advanced Microprocessors and GPUs:** This technology is ideal for next-generation CPUs, GPUs, and specialized accelerators used in servers, workstations, and gaming. It enables faster inter-chip communication, critical for boosting computational power and reducing latency in demanding applications.\n2.  **High-Bandwidth Memory (HBM) Modules:** HBM stacks rely on interposers for high-speed, low-power connections between memory dies and logic. This patent's design can significantly improve the performance and reliability of these critical memory components.\n3.  **Artificial Intelligence Accelerators:** AI hardware, particularly those designed for deep learning and neural network processing, require massive data throughput. The enhanced signal integrity provided by this interposer is crucial for developing more efficient and powerful AI accelerators for both cloud and edge computing.\n4.  **5G Communication Modules:** For 5G base stations, modems, and devices, the ability to handle high-frequency signals with minimal loss and interference is paramount. This interposer design can ensure robust and high-speed wireless communication.\n5.  **Automotive Electronics:** Systems for autonomous driving, in-car infotainment, and advanced safety features demand extreme reliability and performance in harsh environments. The mechanical robustness offered by this patent makes it suitable for critical automotive applications.\n6.  **Wearable Devices and IoT:** The enhanced miniaturization capabilities allow for smaller, more powerful, and more durable wearable electronics and Internet of Things (IoT) devices, expanding their functionality and battery life.\n\nIn essence, any product requiring cutting-edge semiconductor performance, compact form factors, and unwavering reliability stands to benefit from the commercial implementation of the Interposer, Semiconductor Package Structure, and Semiconductor Process.","question":"What are the commercial applications of Interposer, Semiconductor Package Structure, and Semiconductor Process?"},{"answer":"The principles and innovations laid out in the Interposer, Semiconductor Package Structure, and Semiconductor Process patent (US-9852971) provide a strong foundation for numerous future developments in semiconductor packaging. We can anticipate several directions for its evolution:\n\n1.  **Integration with Advanced Thermal Management:** As chip density increases, thermal dissipation becomes a major challenge. Future developments might integrate microfluidic cooling channels or advanced thermal interface materials directly within the isolation layer or the interposer structure itself, leveraging the defined space for more efficient heat removal.\n2.  **Novel Isolation Materials:** Research will likely explore new dielectric materials with even lower dielectric constants (ultra-low-k) to further minimize parasitic capacitance, as well as materials with tunable mechanical properties to provide even greater stress buffering and self-healing capabilities for extended reliability.\n3.  **Scalability to Ultra-Fine Pitches:** The current design can be further optimized for even finer-pitch interconnections, enabling denser 2.5D and 3D stacking of chiplets. This will be crucial for integrating an increasing number of heterogeneous components into a single package.\n4.  **Advanced 3D Stacking and Chiplet Architectures:** This technology will be foundational for the continued evolution of true 3D integration, where multiple active silicon layers are stacked vertically. It will also support highly modular chiplet architectures, allowing designers to mix and match specialized chiplets from different foundries for optimal system performance.\n5.  **Optical Interconnects:** In the long term, the interposer structure might be adapted to incorporate optical waveguides alongside electrical vias, enabling optical interconnects for even higher bandwidth and lower power communication within highly integrated packages.\n\nThese future developments, building upon the robust design of the Interposer, Semiconductor Package Structure, and Semiconductor Process, will continue to push the boundaries of what is possible in electronic device performance, efficiency, and miniaturization.","question":"What are the future developments expected for Interposer, Semiconductor Package Structure, and Semiconductor Process?"}],"topics":["interposer","semiconductor package","semiconductor process","metal layer","metal via","relentless","drive","towards"],"tech_cluster":null},"seo":{"title":"Interposer, Semiconductor Package Structure, and Semiconductor Process - US-9852971","description":"Discover the groundbreaking Interposer, Semiconductor Package Structure, and Semiconductor Process patent. Enhances chip packaging with isolated vias for superior performance and reliability.","keywords":["interposer","semiconductor package","semiconductor process","metal layer","metal via","isolation material","redistribution layer","high-density packaging","chip interconnection","signal integrity","3D integration","advanced packaging","US-9852971","patent"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852971","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852971","citation_suggestion":"Patentable. \"Interposer, semiconductor package structure, and semiconductor process\" (US-9852971). https://patentable.app/patents/US-9852971","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852971","json":"https://patentable.app/api/llm-context/US-9852971","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:18:09.203Z"}