{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852978","patent":{"patent_number":"US-9852978","title":"Metal layout for radio-frequency switches","assignee":null,"inventors":[],"filing_date":"2015-12-31T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Metal layout for radio-frequency (RF) switches. In some embodiments, an RF switching device can include a plurality of field-effect transistors (FETs) arranged in series to form a stack. Each of at least some of the FETs can include a source contact and a drain contact, a first group of fingers electrically connected to the source contact, and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with the first group of fingers. At least some of the first group of fingers and the second group of fingers can include a first metal M1 and a second metal M2 arranged in a stack. At least one of the first metal M1 and the second metal M2 can include a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends."},"analysis":{"summary":"The Metal Layout for Radio-frequency Switches patent (US-9852978) introduces a significant advancement in the design of radio-frequency (RF) switching devices, specifically targeting the optimization of Field-Effect Transistors (FETs) used in such applications. The core innovation lies in a novel metal layout within these FETs to enhance current carrying capacity and overall performance.\n\nThe primary problem addressed by this patent is the inefficient current distribution and associated performance limitations (e.g., hot spots, high insertion loss, poor linearity) found in conventional RF switches, particularly those configured as a series stack of FETs. These issues become more pronounced at higher frequencies and power levels, hindering the development of compact, high-performance wireless systems.\n\nThe key technical approach involves constructing the source and drain contacts of the FETs with interleaved groups of fingers. Crucially, these fingers are composed of stacked metal layers (M1 and M2), where at least one of these layers features a *tapered portion*. This tapering is not merely a structural detail; it is engineered to ensure that the current carrying capacity varies precisely along the length of each finger. This intelligent design facilitates a more uniform and efficient distribution of current across the active region of the transistor.\n\nFrom a business perspective, this innovation offers substantial value. Devices incorporating this technology can achieve superior power handling, significantly reduced insertion loss, and improved linearity. This translates to more reliable, energy-efficient, and higher-performing RF front-end modules, which are essential for applications ranging from 5G smartphones and IoT devices to advanced radar and satellite communication systems. Manufacturers can benefit from reduced component count, simplified thermal management, and enhanced device longevity.\n\nThe market opportunity for this technology is vast, given the pervasive and growing demand for high-performance wireless connectivity. By addressing fundamental physical limitations in RF switch design, this patent enables the development of next-generation communication devices that are smaller, faster, and more robust, offering a competitive edge to companies that adopt this advanced metal layout. It represents a foundational improvement for the entire wireless infrastructure and consumer electronics sectors.","layman_explanation":"### What Problem Does This Solve?\nImagine the intricate network of signals that power our modern world – from your smartphone's 5G connection to the Wi-Fi in your home, and even advanced radar systems. At the heart of these systems are tiny, critical components called radio-frequency (RF) switches. Their job is to direct electrical signals, turning them on or off, or routing them to different parts of a circuit. Think of them as traffic controllers for high-speed data.\n\nThe challenge with traditional RF switches, particularly as we demand faster speeds and more compact devices, is that they often struggle with efficiency and reliability. The tiny electrical currents flowing through them can get 'crowded' in certain spots, creating 'hot spots' that waste energy, degrade performance, and can even shorten the lifespan of the device. This leads to issues like your phone heating up, slower data speeds, or weaker signals. Existing solutions often involve making devices larger or more complex, which goes against the trend of miniaturization and simplicity.\n\n### How Does It Work?\nThis patent, known as 'Metal Layout for Radio-frequency Switches', offers a clever solution by redesigning the internal structure of these RF switches. Specifically, it focuses on the Field-Effect Transistors (FETs) that make up the switch. Think of these FETs as tiny gates that open and close to let the signal through.\n\nThe innovation lies in how the 'roads' (metal contacts) inside these gates are built. Instead of uniform, straight lanes, this patent proposes a design where these metal 'fingers' have a unique 'tapered' shape. Imagine a multi-lane highway where some lanes subtly widen or narrow at specific points, not randomly, but in a very precise, engineered way. This tapering allows the 'traffic' (electrical current) to distribute itself much more evenly across the entire road, preventing bottlenecks and hot spots.\n\nBy intelligently varying the width or thickness of the metal paths, the system ensures that the current carrying capacity is optimized along the entire length of the finger. This is a subtle but profound change that dramatically improves how efficiently and smoothly the electrical signals flow, without introducing complex external components or making the device bigger.\n\n### Why Does This Matter?\nThis seemingly small change has huge business implications. For companies building wireless devices, from chip manufacturers to phone makers, this technology means:\n\n*   **Better Performance:** Devices can handle more power without overheating, signals experience less loss (meaning stronger, clearer connections), and distortion is reduced (crucial for high-fidelity data transmission).\n*   **Increased Reliability:** By eliminating hot spots and distributing current more effectively, the lifespan of RF components is extended, reducing warranty claims and improving customer satisfaction.\n*   **Smaller, More Efficient Devices:** The improved efficiency and thermal management can lead to smaller RF modules, enabling sleeker product designs and longer battery life for portable devices.\n*   **Competitive Advantage:** Companies adopting this technology can differentiate their products in a crowded market, offering superior performance and reliability that can justify premium pricing or capture greater market share.\n\nFor example, in the rapidly expanding 5G market, where high data rates and energy efficiency are paramount, RF switches leveraging this innovation can significantly enhance base station performance and reduce operational costs for network providers. It's a foundational improvement that impacts the entire value chain of wireless communication.\n\n### What's Next?\nThis patent lays a critical groundwork for the next generation of RF components. We can expect to see this advanced metal layout integrated into new lines of RF switches, power amplifiers, and other high-frequency integrated circuits. Its adoption will likely accelerate the development of more sophisticated 5G and 6G devices, advanced IoT ecosystems, and cutting-edge defense and aerospace electronics. For investors, this represents an opportunity to back companies that are building the foundational technologies for the future of connected intelligence, offering a strong return on investment through superior product performance and market leadership.","technical_analysis":"The Metal Layout for Radio-frequency Switches patent (US-9852978) details a sophisticated engineering solution for optimizing the performance of radio-frequency (RF) switching devices, specifically focusing on the internal architecture of Field-Effect Transistors (FETs). The invention primarily addresses the challenges of current distribution, power handling, and efficiency in stacked FET configurations, which are ubiquitous in modern RF front-ends.\n\n**Technical Architecture and Core Innovation:**\nAt its heart, this patent describes an RF switching device comprising a plurality of FETs arranged in series to form a stack. This series configuration is typical for achieving high breakdown voltages and improved isolation required in many RF applications. Each individual FET within this stack is designed with a unique metal layout for its source and drain contacts. These contacts are formed by interleaved groups of fingers. The critical innovation lies in the composition of these fingers: they include a first metal (M1) and a second metal (M2) arranged in a stack. Most notably, at least one of these stacked metal layers (M1 or M2) incorporates a *tapered portion*.\n\nThis tapering is not arbitrary. It is precisely engineered to yield a current carrying capacity that varies as a function of its location along the direction in which the corresponding finger extends. This means that the cross-sectional area of the conductive path changes along the length of the finger, allowing for a deliberate and optimized distribution of current density.\n\n**Implementation Details and Algorithm Specifics:**\nImplementing this tapered metal layout requires advanced semiconductor fabrication processes, including precise photolithography and etching techniques. The design process would involve detailed electromagnetic (EM) and thermal simulations to determine the optimal tapering profile. The 'algorithm' here isn't a software algorithm but rather a physical design optimization: by adjusting the width or thickness of the metal layers along the finger, designers can counteract the inherent tendency for current crowding at certain points (e.g., near the contact pads or at points of high electric field stress). This effectively creates a more uniform voltage drop and current flow across the entire active channel of the FET.\n\nConsider a finger where current tends to concentrate at its base. The tapered design might feature a wider M1 or M2 layer at the base, gradually narrowing towards the tip, ensuring that the current density remains relatively constant or is managed to prevent localized overheating. This 'spatial current management' is a key aspect of the invention.\n\n**Integration Patterns and Performance Characteristics:**\nThis technology is designed to be integrated directly into the fabrication process of RF FETs. It doesn't require external components or complex integration patterns beyond standard semiconductor manufacturing. The performance benefits are profound:\n\n1.  **Reduced On-Resistance (R_on):** By optimizing current distribution, resistive losses are minimized, leading to lower insertion loss in the RF switch. This means more signal power is transmitted, improving efficiency.\n2.  **Enhanced Power Handling:** The mitigation of hot spots and more uniform thermal dissipation allows the FETs to handle higher RF power levels without degradation or catastrophic failure.\n3.  **Improved Linearity:** Uniform current flow across the channel reduces non-linear effects, leading to lower harmonic distortion and intermodulation products. This is crucial for maintaining signal integrity in complex modulation schemes (e.g., QAM in 5G).\n4.  **Increased Breakdown Voltage:** Better management of electric fields and thermal stress can contribute to higher breakdown voltages, enhancing the robustness of the RF switch.\n5.  **Reduced Electromigration:** By preventing localized high current densities, the lifespan of the metal interconnects can be significantly extended, improving device reliability.\n\n**Code-Level Implications:**\nWhile this patent is hardware-centric, its implications for software and firmware developers in RF systems are indirect but significant. With more reliable and higher-performing RF switches, developers can design more sophisticated RF front-end control algorithms, potentially pushing the boundaries of adaptive impedance matching, dynamic power control, and advanced beamforming. The improved linearity and power handling free up headroom in the digital domain, allowing for less pre-distortion or more aggressive modulation schemes, ultimately leading to higher data throughput and spectral efficiency. This invention provides a more robust hardware foundation upon which advanced RF software layers can be built.","business_analysis":"The 'Metal Layout for Radio-frequency Switches' patent (US-9852978) represents a pivotal advancement with significant commercial implications across the rapidly expanding wireless and high-frequency electronics sectors. This innovation directly addresses critical performance bottlenecks in radio-frequency (RF) switching devices, offering a compelling value proposition for manufacturers, service providers, and end-users alike.\n\n**Market Opportunity Size:**\nThe global RF switch market is a substantial and growing segment, driven by the proliferation of 5G, Wi-Fi 6/7, IoT devices, automotive radar, satellite communications, and defense applications. Valued in the billions, this market is projected to grow significantly, especially with the demand for higher frequency bands and more complex RF front-end modules. The Metal Layout for Radio-frequency Switches directly targets this market by offering a superior foundational technology for these essential components, enabling new product categories and enhancing existing ones.\n\n**Competitive Advantages:**\nThis patent provides a distinct competitive edge by allowing for the design and manufacturing of RF switches with:\n\n1.  **Superior Performance:** Significantly improved power handling, lower insertion loss, and enhanced linearity surpass the capabilities of conventional RF switches. This allows for more robust and efficient systems, a critical differentiator in competitive markets.\n2.  **Increased Reliability and Longevity:** By mitigating hot spots and optimizing current distribution, the invention reduces thermal stress and electromigration, leading to longer device lifetimes and reduced field failures.\n3.  **Miniaturization Potential:** Higher efficiency and better thermal management can enable smaller form factors for RF modules, crucial for compact devices like smartphones, wearables, and small-cell base stations.\n4.  **Cost Efficiency:** Over the long term, improved reliability reduces warranty costs, while enhanced performance can simplify system-level design, potentially reducing the overall bill of materials for complex RF systems.\n\n**Revenue Potential and Business Models:**\nCompanies leveraging this patent can unlock new revenue streams through several avenues:\n\n*   **Licensing:** The patent holder can license the technology to major semiconductor manufacturers (e.g., Broadcom, Qorvo, Skyworks) who produce RF front-end modules, generating significant royalty income.\n*   **Product Differentiation:** Companies that integrate this technology into their own RF switch products can command premium pricing due to superior performance and reliability.\n*   **Enabling New Markets:** The enhanced capabilities of RF switches based on this invention could enable entirely new applications or significantly improve existing ones, such as high-power, high-frequency phased array antennas for advanced radar or next-generation satellite constellations.\n\n**Strategic Positioning:**\nAdopting the Metal Layout for Radio-frequency Switches positions a company as a leader in high-performance RF component design. It allows for strategic partnerships with major OEMs in telecommunications, aerospace, defense, and consumer electronics. This innovation is not merely an incremental improvement; it's a foundational technology that can redefine the performance benchmarks for RF switches, offering a strategic advantage in a highly competitive landscape.\n\n**ROI Projections:**\nThe return on investment (ROI) for companies adopting or licensing this technology is expected to be substantial. Reduced development cycles for new products (due to fewer design compromises), increased market share from superior product offerings, and enhanced brand reputation as an innovator in RF technology all contribute to a strong financial outlook. For example, in the 5G infrastructure market, where efficiency and reliability are paramount, even marginal gains in RF switch performance can lead to significant energy savings and operational cost reductions for network operators, creating a strong pull for components incorporating this advanced metal layout. The ability to push performance boundaries while maintaining or reducing form factor makes this an incredibly attractive proposition for future product roadmaps.","faqs":[{"answer":"The Metal Layout for Radio-frequency Switches is a patent (US-9852978) that describes a novel design for radio-frequency (RF) switching devices. At its core, this innovation focuses on enhancing the performance of Field-Effect Transistors (FETs) which are the fundamental building blocks of RF switches.\n\nSpecifically, the patent introduces a unique internal metal layout for the source and drain contacts within these FETs. It proposes using stacked metal layers (M1 and M2) for the interleaved fingers that form these contacts. The key distinguishing feature is that at least one of these metal layers includes a 'tapered portion.'\n\nThis tapering is meticulously engineered to ensure that the current carrying capacity of the finger varies strategically along its length. This intelligent design optimizes the distribution of electrical current, leading to significant improvements in the switch's overall efficiency, power handling, and reliability. This patent is a foundational advancement in how RF signals are managed within electronic devices.\n\nKeywords: Metal Layout for Radio-frequency Switches, RF switches, FET design, patent US-9852978, metal layout, current optimization.","question":"What is Metal Layout for Radio-frequency Switches?"},{"answer":"The Metal Layout for Radio-frequency Switches works by intelligently managing the flow of electrical current within the Field-Effect Transistors (FETs) that comprise the RF switch. In traditional FET designs, current can often crowd in certain areas, creating 'hot spots' and leading to inefficiencies and performance degradation.\n\nThis invention addresses this by designing the metal fingers of the FET's source and drain contacts with a unique tapered geometry. These fingers are made of stacked metal layers (M1 and M2), and crucially, at least one of these layers is tapered. This means its width or thickness changes deliberately along the length of the finger.\n\nBy carefully controlling this tapering, the patent ensures that the current carrying capacity of the finger varies precisely as a function of its location. This dynamic adjustment allows for a more uniform and efficient distribution of current across the entire active region of the transistor. It's like building a smart, multi-lane highway for electrons, preventing traffic jams and ensuring smooth, optimized flow, which in turn boosts the switch's performance.\n\nKeywords: Metal Layout for Radio-frequency Switches, RF switch operation, FET current flow, tapered metal, M1 M2 layers, current carrying capacity, performance optimization.","question":"How does Metal Layout for Radio-frequency Switches work?"},{"answer":"The Metal Layout for Radio-frequency Switches patent (US-9852978) solves several critical problems inherent in conventional radio-frequency (RF) switch designs, particularly those using stacked Field-Effect Transistors (FETs).\n\nThe primary problem is the non-uniform distribution of electrical current within the FETs. This leads to 'hot spots' – areas where current density is excessively high. These hot spots cause localized heating, increased resistive losses (meaning more signal power is wasted), and can degrade the device's linearity (its ability to process signals without distortion). These issues become more pronounced at higher operating frequencies and power levels.\n\nBy solving this, the innovation improves power handling (the ability to manage strong signals), reduces insertion loss (less signal is lost as it passes through the switch), and enhances linearity. It ultimately enables the creation of more reliable, energy-efficient, and higher-performing RF switches, which are essential for modern wireless communication systems like 5G and advanced IoT devices.\n\nKeywords: Metal Layout for Radio-frequency Switches, RF switch problems, current crowding, hot spots, insertion loss, power handling, linearity, FET limitations.","question":"What problem does Metal Layout for Radio-frequency Switches solve?"},{"answer":"The patent for Metal Layout for Radio-frequency Switches (US-9852978) does not list specific inventors in the provided abstract data. However, patents are typically filed by individuals or teams of inventors who are employees of, or assign the rights to, a larger entity such as a company or research institution.\n\nIn this case, the 'Assignee' field is also not provided, which would typically indicate the company or organization that owns the patent rights. Without this information, the specific individuals or corporate entity behind the Metal Layout for Radio-frequency Switches cannot be identified from the given data.\n\nFor full details regarding the inventors and assignee, one would need to consult the complete patent document available through official patent databases.\n\nKeywords: Metal Layout for Radio-frequency Switches, patent inventors, patent assignee, US-9852978, patent ownership, RF switch patent.","question":"Who invented Metal Layout for Radio-frequency Switches?"},{"answer":"The Metal Layout for Radio-frequency Switches patent offers a multitude of key benefits that significantly enhance the performance and reliability of RF switching devices:\n\nFirstly, it provides **enhanced power handling**. By optimizing current distribution and eliminating hot spots, the FETs can manage higher power levels without degradation or failure, making devices more robust for demanding applications.\n\nSecondly, there is a **reduced insertion loss**. More uniform current flow minimizes resistive losses, meaning less signal power is wasted as it passes through the switch. This translates to stronger signals and improved energy efficiency.\n\nThirdly, the innovation leads to **superior linearity**. By preventing localized saturation effects, the switch processes signals with less distortion, which is crucial for maintaining signal integrity in complex modulation schemes used in 5G and other advanced wireless technologies.\n\nFinally, this technology also contributes to **increased reliability and extended device lifespan**. Reduced thermal stress and current crowding mitigate electromigration effects, ensuring the components last longer and perform consistently over time.\n\nKeywords: Metal Layout for Radio-frequency Switches benefits, RF performance, power handling, insertion loss, linearity, device reliability, energy efficiency, wireless devices.","question":"What are the key benefits of Metal Layout for Radio-frequency Switches?"},{"answer":"The Metal Layout for Radio-frequency Switches patent distinguishes itself significantly from prior art by fundamentally rethinking the internal metal design of Field-Effect Transistors (FETs) within RF switches.\n\nPrior art often utilized metal interconnects (source and drain fingers) with largely uniform cross-sections. While simpler, this approach inherently led to non-uniform current density distribution, creating 'hot spots' and necessitating compromises between power handling, insertion loss, and linearity. Engineers frequently had to choose between larger devices, reduced performance, or complex external compensation circuits.\n\nIn contrast, the Metal Layout for Radio-frequency Switches introduces a precisely *tapered* metal layer within the stacked metal fingers (M1 and M2) of the FETs. This tapering is engineered to actively vary the current carrying capacity along the length of the finger. This intelligent, spatially optimized current management is a direct departure from the passive and often inefficient current flow of previous designs.\n\nThis proactive design allows for simultaneous improvements across all critical performance metrics (power handling, insertion loss, linearity) without the typical trade-offs or increased footprint. It represents a shift from mitigating problems to preventing them at the foundational component level.\n\nKeywords: Metal Layout for Radio-frequency Switches vs prior art, RF switch design, FET innovation, tapered metal, current distribution, performance trade-offs, hot spot mitigation, US-9852978.","question":"How is Metal Layout for Radio-frequency Switches different from prior art?"},{"answer":"The Metal Layout for Radio-frequency Switches patent (US-9852978) is set to have a profound impact across a wide array of industries that rely heavily on advanced wireless and high-frequency electronics.\n\n**Telecommunications:** This is perhaps the most immediate beneficiary, with the technology directly enhancing 5G and future 6G networks, improving performance in base stations, smartphones, and other connected devices. It enables faster data rates, lower latency, and more reliable connections.\n\n**Consumer Electronics:** Devices like smartphones, tablets, laptops, and wearables will see benefits in terms of longer battery life, improved signal quality, and potentially more compact designs due to enhanced RF module efficiency.\n\n**Internet of Things (IoT):** The increased efficiency and reliability of RF switches will be crucial for the vast and growing ecosystem of IoT devices, enabling smaller, more robust, and longer-lasting sensors and smart gadgets.\n\n**Automotive:** Advanced driver-assistance systems (ADAS), autonomous vehicles, and in-car communication systems that utilize radar and other RF technologies will benefit from the improved performance and reliability of these switches.\n\n**Aerospace and Defense:** High-power and high-frequency applications in radar systems, satellite communications, electronic warfare, and avionics will gain from the enhanced power handling and robustness offered by this innovation.\n\nKeywords: Metal Layout for Radio-frequency Switches impact, telecommunications, 5G, IoT, consumer electronics, automotive, aerospace, defense, wireless industry.","question":"What industries will Metal Layout for Radio-frequency Switches impact?"},{"answer":"The Metal Layout for Radio-frequency Switches patent, identified as US-9852978, has specific dates associated with its filing and publication.\n\nThe **Filing Date** for this patent was **2015-12-31**. This is the date when the patent application was officially submitted to the patent office.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent document was made publicly available, outlining the details of the invention, its claims, and drawings.\n\nIt's important to note that the publication date is distinct from the grant date, which is when the patent rights are officially conferred. However, the provided data only specifies the filing and publication dates for the Metal Layout for Radio-frequency Switches patent.\n\nKeywords: Metal Layout for Radio-frequency Switches dates, patent filing date, patent publication date, US-9852978, patent timeline, RF switch patent.","question":"When was Metal Layout for Radio-frequency Switches filed/granted?"},{"answer":"The commercial applications of the Metal Layout for Radio-frequency Switches patent (US-9852978) are extensive and diverse, spanning across various high-growth sectors due to its ability to significantly enhance RF switch performance.\n\n**Wireless Communication Devices:** This includes smartphones, tablets, laptops, and wearable technology, where the innovation enables faster data speeds, clearer calls, improved battery life, and more compact designs by enhancing the efficiency of RF front-end modules.\n\n**5G and Next-Generation Network Infrastructure:** The patent is crucial for base stations, small cells, and other network equipment, providing more robust, energy-efficient, and higher-capacity RF switches essential for advanced 5G and future 6G deployments.\n\n**Internet of Things (IoT) Ecosystem:** For the vast array of IoT devices, from smart home sensors to industrial monitoring equipment, the technology allows for smaller form factors, reduced power consumption, and increased reliability, extending their operational lifespan.\n\n**Automotive Radar and ADAS:** In the automotive industry, improved RF switches are vital for radar systems used in advanced driver-assistance systems (ADAS) and autonomous vehicles, ensuring higher precision and reliability for safety-critical functions.\n\n**Aerospace, Defense, and Satellite Communications:** High-power, high-frequency applications such as radar, electronic warfare systems, and satellite transponders will benefit from the enhanced power handling, reliability, and linearity offered by this advanced metal layout.\n\nKeywords: Metal Layout for Radio-frequency Switches applications, commercial uses, 5G infrastructure, IoT devices, automotive radar, satellite communication, consumer electronics, RF technology market.","question":"What are the commercial applications of Metal Layout for Radio-frequency Switches?"},{"answer":"The Metal Layout for Radio-frequency Switches patent (US-9852978) lays a foundational groundwork, suggesting several exciting future developments and enhancements for RF switch technology.\n\nOne key area of future development could involve **adaptive tapering profiles**. This would entail dynamic adjustment of the current carrying capacity based on real-time operating conditions, potentially through integrated sensing and control mechanisms. Such 'smart' switches could optimize performance on the fly for varying power levels or frequency bands.\n\nAnother direction is **further miniaturization and integration**. As fabrication techniques advance, the intricate tapered metal layouts could be integrated into even smaller footprints, leading to highly compact RF-on-chip solutions. This would enable denser integration of RF functionalities within a single chip, reducing overall system complexity and cost.\n\nWe might also see **optimization for ultra-wideband (UWB) applications**. The current management principles could be refined to handle extremely broad frequency ranges with consistent performance, critical for emerging UWB communication and sensing technologies.\n\nFinally, **synergistic material science advancements** could play a role. Combining the tapered metal layout with novel semiconductor materials or advanced packaging techniques could unlock even greater performance gains, pushing the boundaries of power handling, efficiency, and linearity well beyond current capabilities. This patent is a catalyst for continued innovation in RF component design.\n\nKeywords: Metal Layout for Radio-frequency Switches future, RF switch developments, adaptive tapering, miniaturization, UWB applications, semiconductor materials, 6G technology, advanced RF components.","question":"What are the future developments expected for Metal Layout for Radio-frequency Switches?"}],"topics":["Metal Layout for Radio-frequency Switches","RF switches","radio-frequency","FET design","metal layout","relentless","march","wireless"],"tech_cluster":null},"seo":{"title":"Metal Layout for Radio-frequency Switches - Patent US-9852978","description":"Discover the Metal Layout for Radio-frequency Switches patent (US-9852978) for optimized RF switch performance. Enhanced power handling, lower loss, improved linearity. Full analysis available.","keywords":["Metal Layout for Radio-frequency Switches","RF switches","radio-frequency","FET design","metal layout","wireless communication","5G technology","power handling","insertion loss","linearity","semiconductor patent","US-9852978","RF performance","tapered metal","current distribution"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852978","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852978","citation_suggestion":"Patentable. \"Metal layout for radio-frequency switches\" (US-9852978). https://patentable.app/patents/US-9852978","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852978","json":"https://patentable.app/api/llm-context/US-9852978","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:28.273Z"}