{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852980","patent":{"patent_number":"US-9852980","title":"Interconnect structure having substractive etch feature and damascene feature","assignee":null,"inventors":[],"filing_date":"2017-01-13T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner."},"analysis":{"summary":"The patent, titled **Interconnect Structure Having Substractive Etch Feature and Damascene Feature**, introduces a groundbreaking method for manufacturing advanced interconnect structures within semiconductor devices. Its core innovation lies in a hybrid approach that intelligently combines subtractive etching and damascene techniques to overcome limitations in current chip fabrication processes.\n\nThe primary problem this invention solves is the increasing difficulty of forming high-density, high-performance interconnects as chip features shrink. Traditional methods often lead to issues like increased resistance-capacitance (RC) delay, signal crosstalk, and manufacturing defects, which degrade overall chip performance and yield. This patent provides a sophisticated solution to achieve superior electrical characteristics and structural integrity in nanoscale interconnects.\n\nThe key technical approach involves a multi-step process. First, a conductive material is deposited onto a substrate and then precisely patterned using subtractive etching. This creates a foundational conductive layer with intricate geometries. Subsequently, a dielectric layer is applied, followed by the deposition of a second conductive material. Crucially, this second material is then removed through the top of its metal liner, a process akin to damascene, ensuring excellent planarization and robust electrical connections. This integrated methodology allows for greater control over material placement and layer uniformity.\n\nFrom a business perspective, this technology offers significant value. It promises improved manufacturing yields, reduced production costs, and enhanced reliability for semiconductor devices. Industries heavily reliant on advanced microelectronics, such as AI, IoT, high-performance computing, and consumer electronics, stand to benefit from faster, more power-efficient, and more compact chips. This innovation provides a pathway for manufacturers to meet the escalating demand for high-performance integrated circuits, accelerating time-to-market for new products.\n\nThe market opportunity for this invention is substantial, given the continuous growth and innovation in the semiconductor industry. As chip architectures become more complex, especially with the rise of 3D integration and heterogeneous packaging, the need for robust and scalable interconnect solutions like this technology will only intensify. This patent positions itself as a critical enabler for the next generation of computing and smart devices.","layman_explanation":"### What Problem Does This Solve?\nImagine you're trying to build a super-fast, super-small city inside a computer chip. This city needs tiny roads (called interconnects) to connect all its buildings (transistors) so information can flow quickly. The problem is, as these cities get smaller and more crowded, building those roads perfectly becomes incredibly difficult. Older methods often result in bumpy roads, traffic jams (slow signals), or even roads that break down easily. This leads to slower devices, more energy consumption, and often, many defective chips that have to be thrown away. In essence, the existing ways of building these miniature road networks are becoming a major bottleneck for making faster, more powerful, and more reliable electronics.\n\n### How Does It Work?\nThe patent, **Interconnect Structure Having Substractive Etch Feature and Damascene Feature**, provides a sophisticated solution by combining two powerful construction techniques. Think of it like this: For the first layer of roads, you lay down a big sheet of asphalt (conductive material). Then, you use a precision laser cutter (subtractive etching) to carve out exactly the road patterns you need, removing all the unwanted material. This gives you very sharp, detailed roads. Now, for the next layer of roads, instead of just carving, you first put down a perfectly smooth, insulating floor (dielectric layer) over everything, including the first set of roads. Then, you draw the outlines of your new roads on this floor and pour liquid metal (another conductive material) into those outlines. Finally, you use a special polishing machine (the damascene-like feature) to wipe away any excess liquid metal from the top, leaving only perfectly flat, smooth, and insulated roads exactly where they should be. This two-pronged approach ensures that each layer of roads is built with extreme precision and smoothness, minimizing errors and maximizing efficiency.\n\n### Why Does This Matter?\nThis innovation matters immensely because it directly impacts the performance, cost, and reliability of virtually every electronic device we use. By creating superior interconnects, this technology can lead to chips that are: \n*   **Faster and More Efficient:** Information travels more quickly and with less energy loss, meaning your devices respond faster and last longer on a single charge. \n*   **More Reliable:** Stronger, better-formed connections mean fewer defects and longer-lasting products, reducing warranty claims and improving customer satisfaction. \n*   **Denser and More Compact:** The ability to build more intricate and reliable wiring in smaller spaces allows for more powerful chips in smaller devices, crucial for the continued miniaturization trend in tech. \n\nFor businesses, this translates to higher manufacturing yields (fewer wasted chips), lower production costs, and the ability to develop cutting-edge products that outperform competitors. It's a foundational technology that can unlock significant value across industries from consumer electronics to artificial intelligence and autonomous vehicles.\n\n### What's Next?\nThe principles outlined in this patent lay crucial groundwork for future advancements in microelectronics. We can expect to see this technology enable even more complex chip designs, including 3D integrated circuits where layers of components are stacked vertically. This will further push the boundaries of computing power and efficiency. As the demand for advanced AI, IoT, and high-performance computing solutions grows, innovations like this will be critical enablers. For investors, this represents an opportunity in a core technology that underpins the entire digital economy, promising long-term relevance and impact as the world becomes increasingly digital and interconnected.","technical_analysis":"The patent **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** details a novel and sophisticated method for fabricating interconnect structures in semiconductor devices, addressing critical challenges associated with scaling and performance in advanced integrated circuits. This technical analysis will dissect the architecture, implementation specifics, and performance implications of this invention.\n\n**Technical Architecture and Process Flow:**\nThe fundamental architecture described involves a multi-layered structure where conductive pathways are formed using a hybrid fabrication approach. The process initiates with the deposition of a first conductive material (e.g., copper, aluminum) onto a semiconductor substrate. This material then undergoes a subtractive etching process. Subtractive etching, a well-established technique, involves patterning a resist layer over the conductive film, followed by selectively removing the exposed conductive material. This step is crucial for defining the initial, often intricate, geometries of the interconnects with high resolution and precise linewidth control. The fidelity of this initial patterning directly impacts the resistance and capacitance of the lower-level wiring.\n\nFollowing the formation of the patterned first conductive layer, a dielectric layer (e.g., silicon dioxide, low-k dielectric) is deposited over the entire structure. This dielectric serves multiple purposes: it insulates adjacent conductive lines, provides structural support, and, critically, offers a planarized surface for subsequent processing steps. Planarization is paramount in multi-layer interconnect fabrication to ensure that subsequent lithography steps maintain focus and to prevent the accumulation of topographical variations that can lead to defects.\n\nNext, a second conductive material is deposited onto this dielectric layer. The innovation here lies in the subsequent step: the removal of this second conductive material through the top of its second metal liner. This phrase implies a damascene-like process, but potentially with a nuanced implementation. In a typical damascene process, trenches are etched into the dielectric, filled with metal, and then excess metal is removed via chemical mechanical planarization (CMP). The phrasing in this patent suggests a direct removal from the 'top of the second metal liner,' which could indicate a selective etch-back process or a highly controlled CMP that specifically targets the excess material while leaving the patterned interconnects intact within the dielectric trenches. This precise removal mechanism is vital for creating robust, planarized interconnects with minimal shorting or open-circuit issues.\n\n**Implementation Details and Algorithm Specifics:**\nThe 'algorithms' in this context refer to the precise process recipes and control methodologies employed. Key implementation details would involve: \n1.  **Material Selection:** Optimized choices for conductive metals (e.g., highly pure copper for low resistivity) and dielectric materials (e.g., ultra low-k dielectrics for reduced capacitance) that are compatible with both subtractive etching and damascene-like processing. \n2.  **Etching Control:** Highly anisotropic etching techniques for the subtractive step to ensure vertical sidewalls and minimize critical dimension (CD) variations. This would involve optimizing plasma chemistry, power, and pressure. \n3.  **Deposition Uniformity:** Advanced deposition techniques (e.g., PVD, CVD, ALD) for both conductive and dielectric layers to ensure uniform thickness and conformality across the wafer. \n4.  **Planarization/Removal Precision:** The damascene-like removal step requires exceptionally precise control. This could involve advanced CMP slurries and pad designs, or selective etch chemistries that differentiate between the conductive material and the underlying dielectric or liner material. The goal is to achieve near-perfect planarization with minimal dishing or erosion.\n\n**Integration Patterns and Performance Characteristics:**\nThis hybrid approach facilitates the integration of high-resolution, subtractively etched features with the excellent planarization benefits of damascene. This allows for the creation of denser interconnect arrays with improved electrical performance. The key performance characteristics enhanced by this technology include:\n*   **Reduced RC Delay:** By enabling denser wiring with potentially lower resistivity metals and optimized dielectric spacing, signal propagation delays are significantly minimized.\n*   **Lower Crosstalk:** Improved isolation from precise dielectric deposition and patterning reduces unwanted signal coupling between adjacent lines.\n*   **Enhanced Electromigration Resistance:** Robust interface formation and void-free filling in the damascene-like step contribute to better reliability and resistance to electromigration, a critical failure mechanism in nanoscale copper interconnects.\n*   **Improved Manufacturing Yield:** Better planarization and reduced defectivity from the integrated process lead to higher functional chip yields.\n\n**Code-Level Implications (Process Control):**\nWhile not 'code' in the software sense, the process control recipes and equipment automation for this technology would be highly complex. This involves sophisticated process control systems (PCS) that monitor and adjust parameters (e.g., gas flows, temperatures, plasma power, etch times, CMP pressure) in real-time. Statistical process control (SPC) and advanced process control (APC) algorithms would be essential to maintain uniformity and repeatability across wafers and batches, ensuring the precise execution of each subtractive etch and damascene-like removal step. Data analytics and machine learning could be leveraged to optimize these parameters for maximum yield and performance, particularly for the critical material removal steps.\n\nIn summary, this invention represents a significant technical advancement by synergistically combining established fabrication principles to overcome the inherent limitations of each when applied in isolation. The resulting interconnect structures offer superior electrical, mechanical, and reliability characteristics, making this technology a critical enabler for the continued scaling and performance enhancement of future integrated circuits.","business_analysis":"The patent **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** presents a compelling business opportunity by addressing fundamental challenges in semiconductor manufacturing. This innovation is poised to deliver significant competitive advantages and revenue potential across the microelectronics industry.\n\n**Market Opportunity Size:**\nThe global semiconductor market is a multi-trillion-dollar industry, with integrated circuits forming the backbone of virtually all modern technology. As demand for high-performance computing, artificial intelligence (AI), Internet of Things (IoT), 5G, and automotive electronics continues to surge, the need for more powerful, energy-efficient, and compact chips is insatiable. The interconnects within these chips are critical performance determinants. Any innovation that improves their fabrication directly taps into this massive and growing market, offering solutions that enhance the core functionality of these devices. The market for advanced interconnect technologies, while a subset, is integral to the overall semiconductor growth trajectory and represents billions in potential value through improved chip performance and manufacturing efficiency.\n\n**Competitive Advantages:**\nThis technology offers several distinct competitive advantages:\n1.  **Enhanced Performance:** By enabling denser, more electrically efficient interconnects, chips built with this method can achieve higher clock speeds, lower power consumption, and reduced signal latency (RC delay). This directly translates to superior product performance for end-users.\n2.  **Improved Manufacturing Yields:** The hybrid approach, particularly the precise planarization afforded by the damascene-like step, reduces defects in multi-layered structures. Higher yields mean lower per-chip costs and increased profitability for manufacturers.\n3.  **Scalability:** This innovation provides a pathway for continued scaling of integrated circuits into advanced process nodes (e.g., 5nm, 3nm and beyond) and for 3D integration, which is increasingly vital for future chip architectures.\n4.  **Process Flexibility:** Combining subtractive and damascene techniques allows for greater flexibility in design and material choices, potentially enabling optimization for specific applications (e.g., high-speed memory vs. low-power IoT processors).\n5.  **Reliability:** Robust interconnects are less prone to failure mechanisms like electromigration, leading to more reliable and longer-lasting electronic devices.\n\n**Revenue Potential:**\nThe revenue potential for this technology is multifaceted. Semiconductor fabrication companies (foundries) could license this patent or integrate it into their proprietary processes, charging premium prices for chips manufactured using this advanced technique. Chip designers (fabless companies) could leverage this technology to create differentiated products with superior performance, commanding higher prices in competitive markets. Equipment manufacturers could also develop and sell specialized tools optimized for this hybrid process, creating a new revenue stream.\n\n**Business Models:**\nPotential business models include:\n*   **Licensing:** Granting licenses to semiconductor foundries, IDMs (Integrated Device Manufacturers), and equipment suppliers.\n*   **Foundry Service Enhancement:** Offering this advanced interconnect fabrication as a premium service within a foundry's process technology portfolio.\n*   **Joint Ventures/Partnerships:** Collaborating with leading semiconductor players to integrate and further develop the technology.\n*   **IP Monetization:** Direct sale or strategic assertion of the patent in the market.\n\n**Strategic Positioning:**\nThis patent strategically positions its owner at the forefront of advanced semiconductor manufacturing. It addresses a critical bottleneck that affects all high-performance chip designs. By offering a solution that enhances both performance and manufacturability, it becomes a key enabler for next-generation technologies. This allows for market differentiation and potentially establishes a new industry standard for interconnect fabrication, creating a strong competitive moat.\n\n**ROI Projections:**\nThe return on investment (ROI) for adopting or licensing this technology can be substantial. For foundries, improved yields directly translate to higher output and revenue per wafer. For fabless companies, superior chip performance can lead to increased market share and higher average selling prices. The reduction in defect rates and improved reliability can also lower warranty costs and enhance brand reputation. While specific ROI figures would depend on implementation costs and market adoption rates, the fundamental improvements in performance and manufacturing efficiency suggest a strong positive return, especially given the high value of advanced semiconductor products. This invention is not just an incremental improvement; it's a foundational technology that can unlock significant value across the entire semiconductor value chain.","faqs":[{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** is a patented method for manufacturing advanced interconnect structures within semiconductor devices. These interconnects are the microscopic wires that connect the billions of transistors inside a computer chip, enabling them to communicate and function as an integrated circuit. This innovation introduces a hybrid approach that intelligently combines two established semiconductor fabrication techniques: subtractive etching and damascene processing.\n\nSpecifically, the patent describes a process where a first conductive material is deposited and then precisely patterned using subtractive etching. This creates the foundational wiring layer. Subsequently, a dielectric (insulating) layer is applied, and then a second conductive material is deposited. The key novelty lies in the precise removal of this second conductive material through the top of its metal liner, a damascene-like step that ensures perfect planarization and robust electrical connections.\n\nThis integrated methodology aims to overcome the limitations of using either subtractive etching or damascene processes in isolation, especially as chip features continue to shrink to nanoscale dimensions. The result is a method for creating denser, more electrically efficient, and more reliable interconnects, which are critical for the performance of modern electronic devices. The patent ensures that the physical pathways for electrical signals are optimized for speed, integrity, and manufacturability.","question":"What is Interconnect Structure Having Substractive Etch Feature and Damascene Feature?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** works by employing a multi-step, hybrid fabrication process that leverages the strengths of both subtractive etching and damascene techniques. The process begins with the deposition of a first conductive material, such as copper or aluminum, onto a semiconductor substrate. This initial layer is then precisely patterned using subtractive etching, a method where unwanted material is selectively removed to define the desired wire geometries. This step is crucial for creating intricate patterns with high resolution and accurate critical dimensions.\n\nFollowing the formation of this patterned first conductive layer, a dielectric layer is deposited over the entire structure. This dielectric serves as electrical insulation between adjacent wires and, importantly, provides a perfectly planar (flat) surface for the subsequent processing steps. Maintaining planarization is vital in multi-layer chip fabrication to ensure that each successive layer can be accurately patterned and built without topographical issues.\n\nNext, a second conductive material is deposited on this planarized dielectric layer. The innovative aspect then comes into play with the precise removal of this second conductive material through the top of its metal liner. This is a damascene-like step, which ensures that the conductive material remains only in the desired areas, forming robust and perfectly flush connections. This combination of initial subtractive patterning and subsequent damascene-like filling and planarization allows for the creation of highly dense, electrically efficient, and structurally sound interconnects. This intelligent integration overcomes the limitations of using either technique alone, leading to superior overall chip performance.","question":"How does Interconnect Structure Having Substractive Etch Feature and Damascene Feature work?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** primarily solves the critical problem of fabricating high-performance, reliable interconnect structures in advanced integrated circuits as chip features continue to shrink. In modern chips, billions of transistors are connected by an intricate network of microscopic wires. As these wires become infinitesimally small, several challenges arise with traditional manufacturing methods.\n\nOne major issue is the increase in resistance-capacitance (RC) delay, which slows down signal propagation and limits overall chip speed. Traditional subtractive etching methods often create non-planar surfaces, making it difficult to build subsequent layers accurately and contributing to higher RC delays and signal crosstalk. Conversely, purely damascene processes, while excellent for planarization, can be complex for very fine-pitch patterning and may introduce defects like voids or poor barrier integrity. These issues lead to lower manufacturing yields, increased power consumption, and reduced reliability of electronic devices.\n\nThis patent addresses these limitations by offering a hybrid approach that provides both high-resolution patterning and superior planarization. By integrating subtractive etching for initial precision and a damascene-like step for flawless filling and layering, the invention minimizes defects, reduces RC delay, and enhances the overall electrical performance and reliability of the interconnects. It enables chip manufacturers to continue scaling integrated circuits without being bottlenecked by the physical limitations of interconnect fabrication.","question":"What problem does Interconnect Structure Having Substractive Etch Feature and Damascene Feature solve?"},{"answer":"The inventors for the **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** patent (US-9852980) are not specified in the provided patent data. The 'Inventors' field is empty. Similarly, the 'Assignee' field, which typically indicates the company or organization to whom the patent rights are assigned, is also empty in the provided information.\n\nIn the context of patent filings, inventors are the individuals who conceived the invention, while the assignee is the legal entity that owns the patent. Many patents are assigned to corporations where the inventors are employees. Without this information, it's not possible to attribute the invention to specific individuals or a company based solely on the data provided.\n\nHowever, the existence of such a patent signifies a significant contribution to the field of semiconductor manufacturing. Innovations in this area are typically the result of extensive research and development efforts by teams of engineers and scientists in leading technology companies or academic institutions dedicated to microelectronics. The focus of this patent on hybrid fabrication techniques underscores the collaborative and interdisciplinary nature of advanced semiconductor research.","question":"Who invented Interconnect Structure Having Substractive Etch Feature and Damascene Feature?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** offers several key benefits that are crucial for advancing semiconductor technology and improving electronic devices:\n\n1.  **Enhanced Electrical Performance:** By enabling denser and more precisely formed interconnects, this technology significantly reduces resistance-capacitance (RC) delay. This means electrical signals travel faster and more efficiently, leading to higher operating speeds for processors and improved overall device responsiveness. It also minimizes crosstalk, preventing unwanted signal interference.\n2.  **Improved Manufacturing Yields:** The hybrid approach, particularly the superior planarization achieved through the damascene-like step, reduces the occurrence of manufacturing defects in multi-layered structures. This leads to a higher percentage of functional chips per wafer, which directly translates to lower production costs and increased profitability for semiconductor manufacturers.\n3.  **Higher Integration Density:** The ability to create more reliable and precise interconnects in smaller spaces allows for greater component density on a chip. This is essential for continuing the trend of miniaturization and for developing more powerful integrated circuits for applications like AI, IoT, and high-performance computing.\n4.  **Increased Reliability and Durability:** The robust formation of connections and enhanced planarization contribute to better long-term reliability of the interconnects. This reduces the likelihood of failure mechanisms such as electromigration or stress-induced voids, leading to longer-lasting and more dependable electronic devices.\n5.  **Process Flexibility and Scalability:** By intelligently combining subtractive etching and damascene techniques, this innovation provides a more flexible and scalable manufacturing framework. This adaptability is vital for future advancements, including the development of 3D integrated circuits and for integrating new materials into chip architectures. These benefits collectively drive the performance, cost-effectiveness, and reliability of virtually all modern electronics.","question":"What are the key benefits of Interconnect Structure Having Substractive Etch Feature and Damascene Feature?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** differentiates itself from prior art by offering a novel, integrated hybrid approach to interconnect fabrication, rather than relying solely on or simply alternating between conventional subtractive etching and damascene processes. Prior art typically used these methods in isolation or in less optimized sequences, each with inherent limitations that become pronounced at advanced technology nodes.\n\nTraditional subtractive etching, while good for patterning, often results in non-planar surfaces. This non-planarity makes it challenging to deposit and pattern subsequent layers accurately, leading to increased defects, lithography issues, and higher RC delays. Conversely, conventional damascene processes, which excel at planarization and integrating low-resistivity copper, can be complex for ultra-fine patterning and may struggle with void formation or barrier layer integrity at very small dimensions.\n\nThis patent's innovation lies in its strategic combination: it uses subtractive etching for the initial conductive layer to achieve high-resolution patterning, and then employs a damascene-like process for a second conductive material to ensure superior planarization and robust filling. This intelligent integration means the technology leverages the strengths of both techniques while mitigating their respective weaknesses. It provides a cohesive, optimized process flow that simultaneously addresses both the patterning precision and the topographical control required for advanced multi-layered interconnects, offering a significant improvement in overall electrical performance, manufacturing yield, and reliability compared to prior art.","question":"How is Interconnect Structure Having Substractive Etch Feature and Damascene Feature different from prior art?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** is poised to have a profound impact across a wide array of industries that rely heavily on advanced semiconductor technology. As a foundational innovation in chip manufacturing, its benefits will cascade throughout the digital ecosystem.\n\n1.  **Consumer Electronics:** This includes smartphones, tablets, laptops, wearables, and smart home devices. Faster, more power-efficient, and more reliable chips directly translate to better user experiences, longer battery life, and more durable products.\n2.  **High-Performance Computing (HPC) and Data Centers:** Servers, supercomputers, and cloud infrastructure will benefit from processors that can handle larger data volumes and more complex computations at higher speeds, with reduced energy consumption. This is critical for data analytics, scientific research, and cloud services.\n3.  **Artificial Intelligence (AI) and Machine Learning:** AI accelerators and specialized AI chips require immense processing power and efficient data flow. This technology will enable the creation of more powerful and energy-efficient AI hardware, driving advancements in areas like natural language processing, computer vision, and autonomous systems.\n4.  **Automotive:** Modern vehicles, particularly autonomous and electric cars, are becoming increasingly reliant on sophisticated electronics for control, safety, and infotainment. More reliable and high-performance chips are essential for these mission-critical applications.\n5.  **Internet of Things (IoT):** From industrial sensors to smart city infrastructure, IoT devices require compact, low-power, and robust chips. This patent contributes to manufacturing chips that meet these demanding requirements, enabling more pervasive and intelligent connected environments.\n6.  **Telecommunications (5G/6G):** The infrastructure for next-generation wireless communication, including base stations and network equipment, demands high-speed and reliable processing, which will be directly supported by improved interconnect technology. Overall, any industry leveraging microelectronics will see indirect or direct benefits from this advancement.","question":"What industries will Interconnect Structure Having Substractive Etch Feature and Damascene Feature impact?"},{"answer":"The patent for **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** (US-9852980) was filed on **2017-01-13**. The patent was subsequently published and granted on **2017-12-26**. \n\nThe filing date marks when the patent application was initially submitted to the patent office, establishing the priority date for the invention. The publication date, usually occurring after a certain period (e.g., 18 months for U.S. applications), is when the patent application becomes publicly accessible. The grant date signifies when the patent office has reviewed the application, determined it meets all patentability requirements, and officially issued the patent, granting the patent holder exclusive rights to the invention for a specified period.\n\nThis timeline indicates that the patent underwent a relatively swift examination process, suggesting the novelty and clarity of the invention were recognized efficiently by the patent authorities. The rapid progression from filing to grant within a single year highlights the potential significance and clear inventive step embodied in this method for semiconductor manufacturing. This quick turnaround can be beneficial for the patent holder, allowing for earlier commercialization or licensing opportunities for this advanced interconnect technology.","question":"When was Interconnect Structure Having Substractive Etch Feature and Damascene Feature filed/granted?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** has extensive commercial applications across the semiconductor industry and the broader electronics market, primarily by enabling the production of superior integrated circuits. Its core value lies in enhancing the fundamental building blocks of virtually all digital technology.\n\n1.  **High-Performance Processors:** This technology can be utilized in manufacturing CPUs, GPUs, and specialized AI accelerators for servers, data centers, and supercomputers. The improved speed and efficiency of interconnects will lead to more powerful and energy-efficient processors, critical for advanced analytics, machine learning, and cloud computing services.\n2.  **Memory Devices:** Both volatile (DRAM) and non-volatile (NAND flash) memory devices will benefit from denser, more reliable interconnects, allowing for higher storage capacities and faster data access speeds. This is crucial for all forms of computing, from mobile devices to enterprise storage solutions.\n3.  **System-on-Chip (SoC) Designs:** Modern SoCs integrate multiple components (CPU, GPU, memory, I/O) onto a single chip. This patent enables more complex and efficient integration within SoCs, leading to more compact and powerful devices for consumer electronics, automotive, and IoT applications.\n4.  **Advanced Packaging and 3D Integration:** As the industry moves towards stacking multiple dies (chiplets) in 3D configurations, the precise and reliable interconnects facilitated by this patent are essential for vertical integration and high-bandwidth communication between stacked layers. This enables new paradigms in heterogeneous computing.\n5.  **Specialized Sensors and RF Devices:** Devices requiring highly precise electrical pathways, such as advanced sensors for medical, industrial, or automotive applications, and high-frequency RF components for 5G/6G, will benefit from the enhanced signal integrity and reduced parasitic effects offered by this interconnect technology.\n\nUltimately, any product or system that relies on sophisticated microelectronics can leverage this innovation to deliver higher performance, greater reliability, and increased energy efficiency, making it a cornerstone for future technological development and market competitiveness.","question":"What are the commercial applications of Interconnect Structure Having Substractive Etch Feature and Damascene Feature?"},{"answer":"The **Interconnect Structure Having Substractive Etch Feature and Damascene Feature** lays a robust foundation for numerous future developments in semiconductor manufacturing and integrated circuit design. As a hybrid fabrication technique, it offers significant flexibility for evolution and optimization.\n\n1.  **Material Innovation:** Future developments may involve optimizing the types of conductive and dielectric materials used. This could include integrating novel low-resistivity metals or ultra-low-k dielectrics to further reduce RC delay and improve power efficiency. Research into new barrier layers for enhanced electromigration resistance will also be critical.\n2.  **Process Refinement and Automation:** Expect continuous refinement of the subtractive etching and damascene-like removal steps. This includes developing more precise plasma etch chemistries, advanced chemical mechanical planarization (CMP) slurries, and highly selective deposition techniques. Increased automation and the integration of artificial intelligence (AI) and machine learning (ML) for real-time process control and defect detection will further enhance manufacturing yields and consistency.\n3.  **Integration with Advanced Lithography:** As lithography techniques evolve (e.g., High-NA EUV), this interconnect technology will be adapted to leverage the even finer patterning capabilities, enabling denser and more complex interconnect networks at sub-1nm nodes. This will push the boundaries of miniaturization even further.\n4.  **3D Integration and Heterogeneous Packaging:** This technology is particularly well-suited for advancements in 3D integrated circuits (3D ICs) and heterogeneous integration. Future developments will likely focus on optimizing the hybrid process for vertical interconnects (Through-Silicon Vias or TSVs) and for seamlessly connecting diverse chiplets within advanced packaging architectures. This will enable truly monolithic 3D structures with unprecedented performance.\n5.  **Application-Specific Optimization:** The flexibility of this hybrid approach allows for optimization tailored to specific applications. For instance, interconnects for high-speed AI accelerators might prioritize minimal RC delay, while those for low-power IoT devices might focus on ultra-low leakage. Future developments will likely see customized process flows to meet these diverse requirements. Overall, this patent provides a scalable and adaptable framework for the ongoing evolution of microelectronics.","question":"What are the future developments expected for Interconnect Structure Having Substractive Etch Feature and Damascene Feature?"}],"topics":["interconnect structure","subtractive etch","damascene feature","semiconductor manufacturing","integrated circuits","relentless","pursuit","higher"],"tech_cluster":null},"seo":{"title":"Interconnect Structure Having Substractive Etch Feature and Damascene Feature - Patent US-9852980","description":"Discover the Interconnect Structure Having Substractive Etch Feature and Damascene Feature patent. Learn how this hybrid method revolutionizes chip interconnects for faster, more reliable semiconductors.","keywords":["interconnect structure","subtractive etch","damascene feature","semiconductor manufacturing","integrated circuits","chip fabrication","microelectronics","patent US-9852980","advanced interconnects","RC delay","planarization","conductive material","dielectric layer","wafer processing"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852980","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852980","citation_suggestion":"Patentable. \"Interconnect structure having substractive etch feature and damascene feature\" (US-9852980). https://patentable.app/patents/US-9852980","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852980","json":"https://patentable.app/api/llm-context/US-9852980","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:23.056Z"}