{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852982","patent":{"patent_number":"US-9852982","title":"Anti-fuses with reduced programming voltages","assignee":null,"inventors":[],"filing_date":"2016-06-22T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"Device structures for an anti-fuse and methods for manufacturing device structures for an anti-fuse. The anti-fuse includes a first terminal comprised of a fin. The fin includes a section with an edge and inclined surfaces that intersect at the edge. The anti-fuse further includes a second terminal covering the edge and the inclined surfaces of the fin, and an isolation dielectric layer on the inclined surfaces and the edge of the fin. The second terminal is separated from the edge and inclined surfaces of the fin by the isolation dielectric layer. The edge and inclined surfaces on the firm may be formed by oxidizing an upper section of the fin in a trench to form an oxide layer, and then removing the oxide layer to expose the edge and inclined surfaces."},"analysis":{"summary":"The patent \"Anti-fuses with Reduced Programming Voltages\" (US-9852982) introduces a pivotal advancement in non-volatile memory (NVM) technology, specifically targeting the reduction of programming voltages required for anti-fuses. Anti-fuses are critical, one-time programmable components used for device configuration, trimming, and security in integrated circuits.\n\nThe core innovation of this patent addresses a long-standing problem: traditional anti-fuses demand relatively high programming voltages, which necessitates complex on-chip high-voltage generation circuits. This adds to power consumption, increases silicon die area, and elevates manufacturing costs, limiting their application in power-sensitive and compact devices like IoT sensors and mobile electronics.\n\nThis invention proposes novel device structures and manufacturing methods. It features an anti-fuse with a first terminal designed as a fin. A crucial aspect of this fin is a precisely engineered section containing a sharp edge where inclined surfaces converge. A second terminal is then configured to cover this edge and its inclined surfaces, separated by an isolation dielectric layer. The manufacturing process is key: it involves oxidizing an upper section of the fin in a trench to form an oxide layer, which is then meticulously removed to expose the desired sharp edge and inclined surfaces. This precise geometry enables a highly localized electric field concentration, facilitating dielectric breakdown at significantly lower applied voltages.\n\nThe business value and applications of this technology are substantial. By reducing programming voltages, this patent enables the design of more power-efficient integrated circuits, leading to extended battery life for portable devices and lower operational costs for data centers. It allows for smaller chip footprints by minimizing or eliminating the need for bulky high-voltage generation circuits. This translates into reduced manufacturing costs and increased integration density. The market opportunity spans across various sectors including IoT, automotive, mobile computing, and industrial electronics, all of which benefit from more reliable, compact, and energy-efficient non-volatile memory solutions. This innovation provides a competitive advantage for semiconductor manufacturers and device designers seeking to push the boundaries of performance and sustainability in electronics.","layman_explanation":"### What Problem Does This Solve?\n\nImagine the tiny computer chips that power everything from your smartphone to smart home devices. These chips often have 'one-time programmable' elements, like digital switches you can flip once to set a permanent configuration. These are called anti-fuses. The big problem has always been that to 'flip' (or program) these anti-fuses, you need a surprisingly high jolt of electricity – often much higher than what the rest of the chip uses. This isn't just an inconvenience; it's a significant bottleneck. Generating these high voltages on a tiny chip requires extra, bulky circuitry, which makes chips larger, more expensive to produce, and consumes more power. For industries increasingly focused on miniaturization, energy efficiency (think battery life!), and cost reduction, this 'high voltage hurdle' has been a persistent challenge, limiting innovation in areas like the Internet of Things (IoT) and mobile computing.\n\n### How Does It Work?\n\nThe Anti-fuses with Reduced Programming Voltages patent introduces a clever structural redesign to overcome this. Think of it like this: instead of trying to push a thick, blunt needle through a tough fabric, this invention creates a super-sharp, finely honed needle. You don't need nearly as much force to push a sharp needle through, right? The same principle applies here.\n\nThis patent describes an anti-fuse where one of its electrical contacts is shaped like a tiny 'fin' – similar to the fins on a fish or the cooling fins on a heatsink. Crucially, this fin has a very precise, sharp edge where two sloped surfaces meet. This sharp edge is where the magic happens. A very thin insulating layer (the 'dielectric') is placed over this sharp edge, and then a second electrical contact covers it. When you apply voltage, the electric field naturally concentrates very intensely at that sharp, pointy edge. This concentrated field means that the insulating layer breaks down and becomes conductive at a much lower overall voltage than if the field were spread out over a flat surface. The manufacturing process to create this incredibly precise, sharp fin edge is also a key part of the invention, involving a meticulous 'oxidize and remove' technique to sculpt the fin's geometry perfectly.\n\n### Why Does This Matter?\n\nThis invention matters because it significantly lowers the barrier to entry for integrating anti-fuses into next-generation electronics. For businesses, this translates into several key advantages:\n\n*   **Cost Savings:** Less need for complex high-voltage circuitry means smaller chips, which are cheaper to manufacture in high volumes.\n*   **Enhanced Power Efficiency:** Devices can use less power during programming, leading to longer battery life for consumer electronics and more sustainable operation for industrial IoT devices.\n*   **Miniaturization:** With less bulky circuitry, chips can be made even smaller, enabling more compact and innovative product designs.\n*   **Improved Reliability:** A more controlled and efficient breakdown process can lead to anti-fuses that are more reliable and consistent over time, reducing potential failures and warranty costs.\n\nThis innovation offers a competitive edge for companies in semiconductor manufacturing, consumer electronics, automotive, and IoT. It allows them to develop products that are not only more powerful but also more affordable, compact, and energy-efficient, directly impacting their market share and profitability.\n\n### What's Next?\n\nLooking ahead, the Anti-fuses with Reduced Programming Voltages patent could pave the way for an even broader adoption of anti-fuse technology. We can expect to see this innovation enabling new classes of ultra-low-power microcontrollers, highly secure embedded systems for critical infrastructure, and even more sophisticated, compact wearable devices. The market adoption timeline will likely accelerate as semiconductor foundries integrate these manufacturing techniques, leading to a new standard for efficient, one-time programmable memory solutions across the electronics industry. For investors, this represents an opportunity to back technologies that are fundamental to the future of integrated circuits and power-efficient computing.","technical_analysis":"The patent US-9852982, titled \"Anti-fuses with Reduced Programming Voltages,\" describes a significant advancement in the design and fabrication of anti-fuse devices, primarily aimed at lowering the voltage required for their programming. This technical analysis delves into the architectural specifics, implementation considerations, and performance implications of this innovation.\n\n**Technical Architecture:**\nAt the heart of this invention is a meticulously engineered anti-fuse structure. Unlike traditional planar anti-fuses, this patent introduces a three-dimensional (3D) geometry that leverages electric field concentration principles. The device comprises:\n1.  **First Terminal (Fin Structure):** The first terminal is constructed as a fin, a common feature in modern FinFET technology. Crucially, a specific section of this fin is designed with an exposed sharp edge, where two inclined surfaces precisely intersect. This geometric singularity is central to the invention's efficacy.\n2.  **Isolation Dielectric Layer:** A thin dielectric layer is deposited directly onto these inclined surfaces and the sharp edge of the fin. The material choice (e.g., SiO2, SiN, or high-k dielectrics) and its thickness are critical parameters determining the breakdown characteristics.\n3.  **Second Terminal:** A second terminal is then formed to cover the dielectric-coated fin section, effectively encapsulating the sharp edge and inclined surfaces. This terminal applies the programming voltage across the dielectric to the first terminal.\n\n**Implementation Details and Algorithm Specifics:**\n1.  **Fin Formation:** The process begins with standard semiconductor fabrication techniques to create the fin structure on a substrate, typically silicon. This involves lithography and anisotropic etching to define the fin's dimensions and placement within a trench.\n2.  **Edge and Inclined Surface Formation:** This is the most innovative aspect of the manufacturing method. The patent describes oxidizing an upper section of the fin within the trench. This forms a sacrificial oxide layer. Subsequently, this oxide layer is removed (e.g., via wet etch), revealing the desired sharp edge and inclined surfaces. This 'stress-induced' or 'shape-controlled' oxidation followed by removal allows for atomic-level precision in defining the critical breakdown region. The precise angle and sharpness of the edge are paramount for field enhancement.\n3.  **Dielectric Deposition:** A high-quality, defect-free isolation dielectric layer is then deposited conformally over the newly formed fin geometry. Techniques like Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) would be suitable for achieving uniform and thin dielectric films.\n4.  **Second Terminal Formation:** Finally, a conductive material (e.g., polysilicon, metal) is deposited and patterned to form the second terminal, ensuring it covers the dielectric-coated fin section.\n\nThe 'algorithm' for programming involves applying a voltage difference between the first and second terminals. Due to the geometric concentration of the electric field at the sharp edge of the fin, the local electric field strength in the dielectric layer at that point will be significantly higher than the average field strength across a planar dielectric. This field enhancement allows the dielectric breakdown to occur at a lower global applied voltage compared to conventional anti-fuses with uniform dielectric layers, thus reducing the 'programming voltage'.\n\n**Integration Patterns:**\nThis technology is highly compatible with existing CMOS fabrication processes, particularly those utilizing FinFET architectures. The fin formation and subsequent oxidation/removal steps can be integrated into the front-end-of-line (FEOL) processes. The anti-fuse can be co-integrated with logic and memory elements within a System-on-Chip (SoC), offering on-chip programmability without requiring significant deviations from standard manufacturing flows. This compatibility simplifies adoption and reduces integration costs for semiconductor foundries.\n\n**Performance Characteristics:**\n*   **Reduced Programming Voltage (V_prog):** The primary and most significant performance gain. This directly translates to lower power consumption during programming and simpler on-chip power management units.\n*   **Enhanced Reliability:** By controlling the breakdown initiation point via geometric design, the anti-fuse can potentially exhibit more consistent and predictable breakdown characteristics, leading to improved programming yield and long-term reliability compared to anti-fuses relying solely on ultra-thin, potentially leaky dielectrics.\n*   **Smaller Footprint:** The ability to reduce or eliminate bulky high-voltage charge pumps translates directly into smaller die area, crucial for miniaturized electronic devices.\n*   **Speed:** Lower programming voltages can sometimes enable faster programming events, as less energy might be required to initiate the breakdown.\n\n**Code-Level Implications:**\nWhile anti-fuses are hardware components, their integration impacts software and firmware development. Reduced programming voltages mean that the power management firmware can be simplified, requiring less complex voltage sequencing or boosting algorithms. For test and characterization, the programming sequences can be less stressful on the surrounding circuitry. Furthermore, the enhanced reliability could lead to fewer error correction codes or redundancy schemes needed for anti-fuse banks, indirectly affecting memory management firmware. This invention provides a robust hardware foundation that simplifies the software stack related to device configuration and embedded non-volatile storage.","business_analysis":"The patent \"Anti-fuses with Reduced Programming Voltages\" (US-9852982) introduces a significant technological leap with profound business implications for the semiconductor industry and beyond. This innovation directly addresses critical pain points related to power consumption, manufacturing costs, and device miniaturization, opening up substantial market opportunities.\n\n**Market Opportunity Size:**\nAnti-fuses are integral components in a vast array of electronic devices, particularly for one-time programming (OTP) functions in microcontrollers, FPGAs, secure elements, and embedded non-volatile memory (eNVM) within Systems-on-Chips (SoCs). The global market for eNVM alone is projected to reach billions of dollars, driven by the explosive growth of IoT, AI at the edge, automotive electronics, and 5G infrastructure. By enabling anti-fuses to operate at significantly lower programming voltages, this patent unlocks new design possibilities for power-constrained applications and expands the addressable market for anti-fuse technology into segments previously limited by high voltage requirements. The market for more efficient, smaller, and reliable programmable logic and memory solutions is enormous and growing.\n\n**Competitive Advantages:**\nThis technology provides several compelling competitive advantages:\n1.  **Cost Reduction:** By reducing the need for complex, high-voltage generation circuits on-chip, semiconductor manufacturers can achieve smaller die sizes, leading to lower per-chip manufacturing costs. This cost advantage can be passed on to customers or used to increase profit margins.\n2.  **Power Efficiency:** Lower programming voltages translate directly into reduced power consumption during the programming phase and potentially less leakage. This is a critical differentiator for battery-powered devices (IoT, wearables, mobile) where extended battery life is a key selling point.\n3.  **Miniaturization:** Eliminating bulky voltage booster circuits frees up valuable silicon real estate, allowing for more functionality to be integrated into a smaller footprint. This is crucial for compact devices and high-density SoCs.\n4.  **Enhanced Reliability:** The controlled breakdown mechanism enabled by the precise structural design can lead to more consistent anti-fuse performance and improved long-term reliability, which is highly valued in automotive, industrial, and medical applications.\n5.  **Faster Time-to-Market:** Simplified power delivery and integration can accelerate the design and validation cycles for new products incorporating this anti-fuse technology.\n\n**Revenue Potential:**\nCompanies that license or implement this technology can realize significant revenue streams through:\n*   **Chip Sales:** Offering integrated circuits (e.g., microcontrollers, FPGAs, secure ICs) with superior power efficiency and smaller form factors.\n*   **Foundry Services:** Semiconductor foundries adopting this fabrication method can attract new customers seeking advanced eNVM solutions.\n*   **IP Licensing:** Licensing the patent to other semiconductor manufacturers for use in their own products.\n*   **New Product Categories:** Enabling the creation of entirely new classes of ultra-low-power, highly integrated devices that were previously unfeasible.\n\n**Business Models:**\n*   **Integrated Device Manufacturer (IDM):** An IDM could integrate this technology into its own product portfolio, leveraging the competitive advantages for its specific market segments.\n*   **Fabless Semiconductor Company:** A fabless company could design chips incorporating this anti-fuse structure and outsource manufacturing to a foundry capable of implementing the described fabrication methods.\n*   **IP Provider:** The patent holder could license the intellectual property to multiple players across the semiconductor ecosystem.\n\n**Strategic Positioning:**\nThis patent strategically positions its adopters at the forefront of power-efficient non-volatile memory and programmable logic. It aligns perfectly with major industry trends towards 'more-than-Moore' integration, edge computing, and sustainable electronics. Companies utilizing this innovation can differentiate themselves as leaders in delivering high-performance, low-power solutions, attracting key customers in high-growth sectors.\n\n**ROI Projections:**\nThe return on investment for implementing this technology can be substantial. Reduced manufacturing costs, coupled with increased market penetration due to superior product attributes (power efficiency, size, reliability), can lead to higher sales volumes and improved profit margins. For a typical SoC, the cost savings from reducing die area and simplifying power management can quickly offset any initial R&D or licensing costs. Furthermore, the ability to open new markets (e.g., truly disposable IoT sensors) represents a long-term growth opportunity with potentially exponential returns. The enhanced reliability also reduces warranty costs and improves brand reputation, contributing to indirect financial benefits.","faqs":[{"answer":"The Anti-fuses with Reduced Programming Voltages patent (US-9852982) describes a breakthrough in anti-fuse technology, which are tiny, one-time programmable switches found in virtually all modern electronic chips. These switches are used for permanent configurations like storing unique device IDs, setting factory defaults, or enabling security features.\n\nThe core innovation of this patent is its ability to program these anti-fuses using significantly lower voltages than traditionally required. This is achieved through a novel device structure and a precise manufacturing method that enhances the efficiency of the dielectric breakdown process. Instead of needing a high-power electrical 'zap,' this invention allows for a much gentler, more efficient programming pulse.\n\nThis technology addresses a long-standing challenge in semiconductor design, where high programming voltages for anti-fuses often necessitate bulky, power-hungry support circuits on the chip. By reducing this voltage, the Anti-fuses with Reduced Programming Voltages paves the way for more compact, energy-efficient, and cost-effective electronic devices across various applications.","question":"What is Anti-fuses with Reduced Programming Voltages?"},{"answer":"The Anti-fuses with Reduced Programming Voltages works by cleverly manipulating the physical structure of the anti-fuse to concentrate the electric field at a specific point, thereby reducing the voltage needed for programming. Imagine trying to break a thin wall: you could hit it with a blunt object with great force, or you could use a sharp pick with less force to achieve the same result. This patent uses the 'sharp pick' approach.\n\nSpecifically, the invention features a first terminal designed as a 'fin' – a microscopic, wall-like structure. A crucial part of this fin has a very sharp edge where two sloped surfaces meet. This sharp edge is key to the innovation. A thin insulating layer, called the dielectric, is placed over these inclined surfaces and the sharp edge. A second electrical terminal then covers this entire structure.\n\nWhen a programming voltage is applied between the two terminals, the electric field naturally concentrates intensely at the sharp edge of the fin. This localized concentration of the electric field significantly increases the local field strength within the dielectric, allowing it to break down and form a permanent conductive path at a much lower overall applied voltage than would be possible with a flat, non-concentrated structure. The manufacturing process, involving sacrificial oxidation and removal, is meticulously designed to create this precise, sharp fin geometry.","question":"How does Anti-fuses with Reduced Programming Voltages work?"},{"answer":"The Anti-fuses with Reduced Programming Voltages patent solves the critical problem of high programming voltages in traditional anti-fuses. For decades, anti-fuses have demanded significantly higher voltages than the core logic circuits they operate alongside. This disparity has led to several persistent issues in semiconductor design and manufacturing.\n\nFirstly, it necessitates the inclusion of complex, on-chip high-voltage generation circuits (like charge pumps), which consume valuable silicon die area. This makes chips larger, more expensive to produce, and limits their integration into compact devices. Secondly, generating and utilizing these high voltages consumes substantial power, leading to reduced battery life in portable electronics and higher operational costs in large-scale systems. Lastly, the high-voltage stress can sometimes impact the reliability and longevity of the surrounding low-voltage circuitry.\n\nBy enabling anti-fuses to be programmed at much lower voltages, the Anti-fuses with Reduced Programming Voltages directly alleviates these problems. It allows for smaller, more power-efficient, and more reliable chips, which are essential for the next generation of IoT, mobile, and automotive electronics.","question":"What problem does Anti-fuses with Reduced Programming Voltages solve?"},{"answer":"The inventors of the Anti-fuses with Reduced Programming Voltages patent (US-9852982) are not publicly listed in the provided data. Patents are often assigned to corporations, and in such cases, the individual inventors are typically employees of that assignee.\n\nWhile the specific individuals are not named here, the innovation represents the culmination of advanced research and development in semiconductor device physics and fabrication engineering. Such breakthroughs are usually the result of collaborative efforts by highly specialized teams within leading technology companies or research institutions. The focus of this patent is on the technical solution and its impact, rather than individual attribution in this context.","question":"Who invented Anti-fuses with Reduced Programming Voltages?"},{"answer":"The Anti-fuses with Reduced Programming Voltages offers several significant benefits that address long-standing challenges in the semiconductor industry.\n\nFirstly, and most importantly, it enables **reduced programming voltages**. This means anti-fuses can be programmed with much less electrical power, leading to **enhanced power efficiency** for the entire chip. For battery-powered devices like smartphones, wearables, and IoT sensors, this translates directly into **longer battery life** – a major consumer demand.\n\nSecondly, by minimizing or eliminating the need for bulky on-chip high-voltage generation circuits, the technology allows for **smaller chip footprints**. This not only reduces manufacturing costs but also enables greater integration density, allowing more functionality to be packed into smaller devices. Finally, the precise, geometrically controlled breakdown mechanism can lead to **improved reliability and consistency** in anti-fuse programming, reducing potential failures and enhancing the overall robustness of electronic systems. These benefits make the Anti-fuses with Reduced Programming Voltages a highly attractive solution for modern electronics.","question":"What are the key benefits of Anti-fuses with Reduced Programming Voltages?"},{"answer":"The Anti-fuses with Reduced Programming Voltages distinguishes itself from prior art anti-fuse technologies primarily through its innovative structural design and manufacturing methodology, which directly target and solve the high programming voltage problem.\n\nTraditional anti-fuses (prior art) often rely on applying a high voltage across a relatively uniform thin dielectric layer to induce breakdown. To achieve lower programming voltages in prior art, dielectrics had to be made extremely thin, which could compromise reliability, increase leakage, and lead to manufacturing challenges. This often forced designers to use bulky, power-hungry charge pumps to generate the necessary high voltages, despite the core logic operating at much lower voltages.\n\nIn contrast, the Anti-fuses with Reduced Programming Voltages utilizes a fin-based first terminal with a precisely sculpted, sharp edge and inclined surfaces. This geometric feature is designed to concentrate the electric field at the point of breakdown. By focusing the electrical stress, the invention can achieve reliable dielectric breakdown at significantly lower *overall* applied voltages, without necessarily requiring an ultra-thin dielectric across the entire structure. This fundamental difference in approach allows for improved power efficiency, smaller die area, and enhanced reliability compared to conventional anti-fuse designs.","question":"How is Anti-fuses with Reduced Programming Voltages different from prior art?"},{"answer":"The Anti-fuses with Reduced Programming Voltages patent is poised to impact a wide array of industries that rely on advanced semiconductor technology and efficient, reliable electronic components.\n\n**Internet of Things (IoT) and Wearables:** These sectors demand ultra-low-power, compact, and cost-effective devices. The reduced programming voltages and smaller footprints enabled by this technology will lead to longer battery life, smaller form factors, and cheaper production for smart sensors, smart home devices, and wearable electronics.\n\n**Automotive Electronics:** Modern vehicles are packed with complex electronics for safety, infotainment, and autonomous driving. Enhanced reliability and power efficiency for anti-fuses used in critical control units, sensor calibration, and security features will be highly beneficial.\n\n**Mobile Computing:** Smartphones, tablets, and laptops will benefit from more power-efficient chipsets, contributing to extended battery life and potentially slimmer designs.\n\n**Data Centers and Cloud Infrastructure:** While not directly battery-powered, the cumulative power savings from more efficient anti-fuses in server components and network hardware can lead to significant energy cost reductions.\n\n**Industrial and Medical Electronics:** Applications requiring high reliability, long operational lifespans, and precise calibration will benefit from the improved consistency and robustness of anti-fuses with reduced programming voltages. This innovation is a foundational technology that will enable advancements across the entire electronics ecosystem.","question":"What industries will Anti-fuses with Reduced Programming Voltages impact?"},{"answer":"The Anti-fuses with Reduced Programming Voltages patent, identified as US-9852982, has specific key dates related to its official filing and publication.\n\nThe **Filing Date** for this patent was **2016-06-22**. This is the date when the patent application was officially submitted to the patent office, initiating the examination process. It marks the earliest date from which the invention's novelty is typically assessed.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent document was formally published, making its details publicly accessible. While the patent may have been granted later, the publication date signifies its official entry into the public domain for review and analysis by the scientific and industrial communities. These dates are crucial for understanding the patent's timeline and its position within the broader technological development landscape.","question":"When was Anti-fuses with Reduced Programming Voltages filed/granted?"},{"answer":"The commercial applications of the Anti-fuses with Reduced Programming Voltages are extensive, spanning numerous sectors due to its ability to make electronic components more efficient, compact, and reliable.\n\nOne primary application is in **embedded non-volatile memory (eNVM)** for microcontrollers and System-on-Chips (SoCs). This enables the storage of critical boot-up codes, device configurations, and unique identifiers with reduced power overhead, crucial for the booming **Internet of Things (IoT)** market. Devices like smart sensors, wearables, and connected appliances will benefit from longer battery life and smaller form factors.\n\nAnother significant area is **hardware security**. Anti-fuses are used to store cryptographic keys, secure boot settings, and enable tamper detection. With reduced programming voltages, these security features can be integrated more efficiently and robustly into secure elements for **financial transactions, digital rights management, and critical infrastructure**.\n\nFurthermore, the technology is vital for **device trimming and calibration** in analog and mixed-signal circuits, ensuring precise performance in sensors, power management ICs, and RF components. In **automotive electronics**, where reliability and power efficiency are paramount, this innovation can enhance the performance of anti-fuses used in engine control units, advanced driver-assistance systems (ADAS), and infotainment systems. The commercial appeal lies in delivering superior performance, lower costs, and enhanced reliability across a broad spectrum of electronic products.","question":"What are the commercial applications of Anti-fuses with Reduced Programming Voltages?"},{"answer":"The Anti-fuses with Reduced Programming Voltages patent lays a strong foundation for future advancements in non-volatile memory and semiconductor technology. Several key developments can be anticipated based on this innovation.\n\nFirstly, there will likely be continuous **optimization of the fin geometry and dielectric materials**. Researchers will explore even sharper edges, novel dielectric stacks, and alternative materials to push programming voltages even lower, potentially reaching compatibility with ultra-low-power, sub-0.5V logic. This could unlock new frontiers for disposable electronics and pervasive computing.\n\nSecondly, we can expect **broader integration into advanced process nodes**. As semiconductor fabrication moves to 5nm, 3nm, and beyond, the intrinsic benefits of this fin-based structure will become even more pronounced, making it a standard for OTP solutions in future FinFET and Gate-All-Around (GAA) transistor technologies. This will further reduce die area and power consumption.\n\nFinally, the principles of geometric electric field enhancement demonstrated by Anti-fuses with Reduced Programming Voltages might inspire **novel designs for other semiconductor devices**. This could include new types of non-volatile memory, highly efficient sensors, or even advanced transistor architectures that leverage precise nanoscale shaping to improve performance or reduce power requirements. The invention serves as a blueprint for innovating at the intersection of materials, geometry, and electrical physics to overcome fundamental limitations in microelectronics.","question":"What are the future developments expected for Anti-fuses with Reduced Programming Voltages?"}],"topics":["anti-fuse technology","reduced programming voltage","non-volatile memory","semiconductor innovation","power efficiency","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Anti-fuses with Reduced Programming Voltages - Patent US-9852982","description":"Discover the Anti-fuses with Reduced Programming Voltages patent. This innovation reduces programming voltage for anti-fuses, boosting power efficiency and reducing chip size.","keywords":["anti-fuse technology","reduced programming voltage","non-volatile memory","semiconductor innovation","power efficiency","chip design","finFET","embedded memory","patent US-9852982","integrated circuits","dielectric breakdown","low power electronics","hardware security"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852982","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852982","citation_suggestion":"Patentable. \"Anti-fuses with reduced programming voltages\" (US-9852982). https://patentable.app/patents/US-9852982","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852982","json":"https://patentable.app/api/llm-context/US-9852982","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:09.874Z"}