{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9852988","patent":{"patent_number":"US-9852988","title":"Increased contact alignment tolerance for direct bonding","assignee":null,"inventors":[],"filing_date":"2016-12-15T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance."},"analysis":{"summary":"The patent \"Increased Contact Alignment Tolerance for Direct Bonding\" (US-9852988) introduces a significant advancement in the direct bonding of semiconductor substrates, crucial for modern microelectronic devices. Its core innovation lies in a novel design for conductive contact structures and a refined bonding process that dramatically improves manufacturing alignment tolerances.\n\nTraditionally, direct bonding requires extremely precise alignment of conductive pads between two substrates, with even minor misalignments leading to device failure and low manufacturing yields. This patent addresses this critical problem by proposing elongated, non-parallel conductive contact features on each substrate. When these substrates are bonded, electrical contact is established at the intersections of these non-parallel features, providing a much larger margin for error during the alignment process.\n\nThe technical approach involves a bonded device structure comprising a first substrate with a first set of conductive contacts and an adjacent non-metallic region, and a second substrate with a corresponding second set of contacts and non-metallic region. The key is the contact-bonded interface formed by bonding the non-metallic regions first, providing mechanical stability. Subsequently, the elongated, non-parallel contact features engage at their intersections. This design not only enhances alignment flexibility but also minimizes issues such as 'dishing' (uneven material removal) and parasitic capacitance, which can degrade electrical performance.\n\nFrom a business perspective, this invention offers substantial value. It promises higher manufacturing yields for complex devices like 3D integrated circuits (3D ICs), advanced sensors, and high-performance processors, leading to reduced production costs. The improved reliability and performance characteristics of devices manufactured using this technology provide a competitive advantage. The market opportunity lies in enabling more cost-effective and scalable production of next-generation electronics, accelerating innovation in areas like AI hardware, IoT devices, and advanced memory solutions by de-risking a critical manufacturing step.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're trying to build a complex, multi-story building, but each floor needs to connect perfectly to the one below it with hundreds of tiny, precise pipes and wires. If even one pipe is slightly off, that whole floor, or even the entire building, might not work. This is similar to the challenge in modern electronics manufacturing, specifically when 'direct bonding' two semiconductor wafers together to create advanced chips (like those found in your smartphone or high-end computers). These wafers have microscopic electrical connections that must align with extreme precision—often within nanometers, which is mind-bogglingly small. This ultra-precision requirement leads to significant manufacturing waste (low yields), higher production costs, and slows down the development of new, more powerful devices. The existing solutions rely on incredibly expensive and sophisticated machinery, but even then, the process remains a major bottleneck.\n\n### How Does It Work?\n\nThe patent, titled \"Increased Contact Alignment Tolerance for Direct Bonding,\" offers a remarkably clever solution. Instead of trying to line up two perfectly matching 'dots' on each wafer, this innovation uses 'lines' or 'grids' of conductive material. Imagine one wafer has a set of parallel lines, and the other wafer has another set of parallel lines, but these second lines are placed at a slight angle to the first set. When you bring the two wafers together, even if they're not perfectly centered, these angled lines will still cross each other at multiple points, creating reliable electrical connections. It's like trying to hit a wide net with a ball, rather than aiming for a tiny bullseye.\n\nFurthermore, the invention introduces a two-step bonding process. First, the non-electrical, non-metallic parts of the wafers (like the insulating layers) are bonded together. This creates a strong, stable physical connection. Once the wafers are firmly held in place, the angled electrical 'lines' can then make their connections where they intersect. This separation of mechanical stability from electrical precision is key. It makes the entire process much more forgiving, reducing the chance of errors and improving the overall reliability of the bond. This approach minimizes other issues too, like 'dishing' (where parts of the wafer become uneven) and 'parasitic capacitance' (which can slow down the electrical signals).\n\n### Why Does This Matter?\n\nThis technology has profound implications for the business world. For semiconductor manufacturers, it means significantly higher manufacturing yields, translating directly into lower production costs per chip. If a company can produce 95 working chips out of 100, instead of 70, their profitability skyrockets. This improved efficiency also enables faster time-to-market for new products, as development and production ramp-up become less prone to delays caused by alignment failures. It allows companies to design and commercialize more complex, high-performance devices, such as advanced 3D integrated circuits (3D ICs) or specialized sensors, which were previously too expensive or difficult to mass-produce. This gives adopters a strong competitive advantage in a rapidly evolving market, allowing them to lead in innovation and capture market share. The return on investment (ROI) for implementing such a technology can be substantial, driven by reduced waste, increased throughput, and the ability to launch superior products.\n\n### What's Next?\n\nThe \"Increased Contact Alignment Tolerance for Direct Bonding\" patent is set to become a foundational technology for future microelectronics. We can expect to see its principles adopted in the next generation of AI accelerators, advanced memory modules, and highly integrated IoT devices. Its impact will extend beyond just manufacturing, influencing how chip designers approach complex system architectures. This innovation will accelerate the trend towards 'heterogeneous integration,' where different types of components (logic, memory, sensors) are stacked and combined to create even more powerful and efficient systems. For investors, this represents an opportunity in companies that either hold this intellectual property or are early adopters in integrating it into their manufacturing processes, as it promises to drive significant advancements and profitability in the semiconductor industry.","technical_analysis":"The \"Increased Contact Alignment Tolerance for Direct Bonding\" patent (US-9852988) presents a sophisticated solution to a longstanding challenge in microelectronics fabrication: achieving high-yield direct bonding of semiconductor substrates. Direct bonding, essential for advanced packaging and 3D IC integration, conventionally relies on micron- or sub-micron scale alignment of discrete conductive pads. This patent fundamentally re-architects the contact scheme and bonding sequence to mitigate this precision bottleneck.\n\n**Technical Architecture and Core Innovation:**\nThe invention describes a bonded device structure comprising a first substrate and a second substrate. Each substrate features a set of conductive contact structures and an adjacent non-metallic region. The critical innovation lies in the design of these conductive contact structures: they are elongated features, such as individual lines or lines connected in a grid. Crucially, the contact features on the first substrate are designed to be non-parallel to those on the second substrate. When the substrates are brought together, electrical contact is established not by direct pad-on-pad overlap, but at the multiple intersection points of these non-parallel elongated features.\n\n**Implementation Details and Bonding Process:**\nThe bonding process is delineated into stages. Initially, the non-metallic regions (e.g., dielectric layers like SiO2) adjacent to the conductive contacts on both substrates are brought into intimate contact and bonded. This forms a robust contact-bonded interface that provides initial mechanical stability and coarse alignment. This dielectric-to-dielectric bonding is generally less sensitive to precise lateral alignment than direct metal-to-metal bonding. Once this mechanical foundation is established, the elongated conductive features, due to their non-parallel orientation, are ensured to make contact at various intersections across a broader range of lateral misalignments. This sequential approach decouples the stringent alignment requirement for electrical contact from the initial mechanical bonding, offering a significant advantage.\n\n**Algorithm Specifics and Design Principles:**\nWhile not an 'algorithm' in the software sense, the design principle can be viewed as an optimization for contact probability under positional uncertainty. By using elongated, non-parallel features, the 'target area' for successful electrical connection is effectively expanded. For instance, if each substrate has a grid of lines, any slight lateral shift will still result in numerous intersection points, maintaining electrical continuity. This contrasts sharply with square pads, where a small shift can cause complete misalignment. The 'algorithm' here is a geometric one, maximizing intersection opportunities within a given misalignment budget. The number and density of these elongated features can be optimized based on the desired alignment tolerance, target parasitic capacitance, and current handling requirements.\n\n**Performance Characteristics and Implications:**\n1.  **Alignment Tolerance**: The primary benefit is a significantly increased tolerance for lateral misalignment, which translates directly to higher manufacturing yields and reduced costs associated with ultra-precise alignment equipment.\n2.  **Parasitic Capacitance**: The use of elongated, potentially narrower lines instead of large, overlapping pads can lead to a reduction in parasitic capacitance. This is critical for high-frequency circuits where excessive capacitance can degrade signal integrity and increase power consumption. The design allows for optimization of contact area versus capacitance.\n3.  **Dishing Minimization**: Elongated features are generally less prone to 'dishing' during Chemical Mechanical Planarization (CMP) compared to large metallic pads. This ensures better planarity of the bonded surfaces, leading to more robust and reliable direct bonds.\n4.  **Reliability**: The two-stage bonding process, starting with a stable non-metallic bond, enhances the overall mechanical and electrical reliability of the bonded structure, making it more resilient to thermal and mechanical stresses.\n\n**Integration Patterns and Future Directions:**\nThis technology is highly applicable to 3D IC stacking, wafer-to-wafer bonding, die-to-wafer bonding, and the broader field of heterogeneous integration. It simplifies the integration of dissimilar materials and devices that might have different inherent alignment challenges. Future research could explore adaptive contact geometries, dynamic adjustment of contact pressure based on real-time alignment feedback, or the integration of self-assembly principles to further leverage the inherent alignment tolerance of this approach. The increased Contact Alignment Tolerance for Direct Bonding patent lays a robust foundation for the next generation of high-density, high-performance microelectronic systems.","business_analysis":"The \"Increased Contact Alignment Tolerance for Direct Bonding\" patent (US-9852988) is not merely a technical refinement; it represents a strategic business enabler for the entire microelectronics industry. Addressing a critical manufacturing bottleneck, this innovation unlocks significant market opportunities, strengthens competitive positions, and promises substantial ROI for adopters.\n\n**Market Opportunity Size:**\nThe global semiconductor manufacturing market is projected to reach trillions of dollars in the coming years, driven by demand for advanced computing, AI, IoT, and 5G/6G technologies. A significant portion of this growth relies on advanced packaging techniques like 3D IC stacking and heterogeneous integration, which are directly impacted by direct bonding efficiency. The total addressable market for improved direct bonding solutions is immense, encompassing memory manufacturers (e.g., 3D NAND, HBM), logic foundries (e.g., chiplets), sensor manufacturers (e.g., MEMS, image sensors), and power device producers. By increasing yields and reducing costs, this patent could capture a substantial share of value within this vast ecosystem, potentially impacting hundreds of billions in manufacturing output annually.\n\n**Competitive Advantages:**\nAdoption of this technology provides several clear competitive advantages:\n1.  **Higher Yields & Lower Costs**: The primary benefit is a dramatic increase in manufacturing yield for complex direct-bonded devices. This directly translates to lower per-unit production costs, allowing companies to offer more competitive pricing or achieve higher profit margins.\n2.  **Faster Time-to-Market**: Reduced alignment complexity means faster process development cycles and quicker ramp-up to high-volume manufacturing, accelerating product launches.\n3.  **Enabling Complex Designs**: By mitigating alignment challenges, this innovation enables the development and commercialization of more intricate and higher-density 3D IC designs that were previously too risky or expensive to produce. This allows for superior product performance and functionality.\n4.  **Reduced Capital Expenditure**: The increased alignment tolerance may allow manufacturers to utilize existing bonding equipment more effectively or invest in less expensive machinery, reducing capital expenditure requirements for new fabs or upgrades.\n5.  **Improved Device Performance**: Minimizing parasitic capacitance and dishing leads to higher-performing, more reliable devices, enhancing brand reputation and customer satisfaction.\n\n**Revenue Potential and Business Models:**\nCompanies leveraging this patent can realize revenue potential through:\n*   **Direct Product Sales**: Manufacturing and selling devices (e.g., 3D stacked memory, advanced processors, sophisticated sensors) that achieve higher yields and performance due to this technology.\n*   **Licensing**: The patent holder (or assignee, if one emerges) could license the technology to other semiconductor manufacturers, generating royalty income.\n*   **Foundry Services**: Foundries adopting this method can offer enhanced direct bonding services with guaranteed higher yields, attracting premium customers for advanced packaging.\n*   **Equipment Sales**: Equipment manufacturers could integrate this technology into next-generation direct bonding tools, selling higher-value solutions.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves as leaders in advanced manufacturing and heterogeneous integration. It provides a distinct differentiator in a market where manufacturing efficiency and product performance are paramount. For companies struggling with 3D IC yields, this technology offers a lifeline, potentially allowing them to catch up or leapfrog competitors. It reinforces a strategy of innovation-driven cost reduction and performance enhancement.\n\n**ROI Projections:**\nFor a typical semiconductor manufacturer experiencing 20-40% yield losses due to alignment issues in direct bonding, implementing the principles of this patent could lead to a 10-30% increase in overall yield. Considering the high cost of wafers and processing, a single percentage point increase in yield can translate to millions or even tens of millions of dollars in savings per production line annually. The ROI from reduced scrap, faster time-to-market, and potentially lower capital expenditure could be realized within 1-3 years, making this a highly attractive investment for any player in the advanced microelectronics space. This innovation is a clear path to both top-line growth through enhanced product capabilities and bottom-line improvement through manufacturing efficiency.","faqs":[{"answer":"The patent \"Increased Contact Alignment Tolerance for Direct Bonding\" (US-9852988) describes an innovative method and structure for joining two semiconductor substrates, a process known as direct bonding. This technology fundamentally improves the manufacturing process by making it much more forgiving when aligning the microscopic electrical connections between the two layers.\n\nTraditionally, direct bonding requires near-perfect alignment of tiny contact pads, which is extremely difficult and often leads to manufacturing errors and wasted materials. This patent introduces a novel approach where conductive contacts are designed as elongated, non-parallel features on each substrate. When these substrates are bonded, electrical contact is established at the intersections of these non-parallel features, providing a significantly wider margin for error during alignment.\n\nEssentially, it transforms a 'bullseye' alignment challenge into a 'hit a wide net' scenario, making the production of complex microelectronic devices more reliable and cost-effective. This innovation is critical for the advancement of technologies like 3D integrated circuits (3D ICs) and advanced sensors. Keywords: direct bonding, alignment tolerance, semiconductor manufacturing, microelectronics, 3D ICs.","question":"What is Increased Contact Alignment Tolerance for Direct Bonding?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent works by implementing two key innovations: a novel contact geometry and a two-stage bonding sequence.\n\nFirst, instead of traditional square or circular contact pads, this technology uses elongated conductive features, such as lines or grids, on each of the two substrates to be bonded. Crucially, these elongated features are designed to be non-parallel to each other. When the substrates are brought together, electrical contact occurs at the numerous points where these non-parallel lines intersect, rather than requiring perfect overlap of identical shapes. This intersection-based contact provides a much larger permissible range for lateral misalignment.\n\nSecond, the bonding process is decoupled. Initially, the non-metallic (insulating) regions adjacent to the conductive contacts on both substrates are bonded together. This creates a strong mechanical connection and establishes a coarse alignment. Once the substrates are mechanically stable, the elongated conductive features then engage electrically at their intersections. This two-step process significantly reduces the pressure on ultra-precise initial alignment, enhancing manufacturing yield and device reliability. Keywords: contact geometry, non-parallel contacts, two-stage bonding, intersection, electrical contact.","question":"How does Increased Contact Alignment Tolerance for Direct Bonding work?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent solves the critical problem of stringent alignment requirements in direct bonding processes for microelectronics manufacturing. In traditional methods, bonding two semiconductor substrates requires their microscopic conductive contacts to align with extreme precision, often within tens of nanometers.\n\nThis ultra-precision is incredibly difficult to achieve reliably in high-volume production, leading to several significant issues: high manufacturing costs due to expensive alignment equipment, substantial yield losses from misaligned devices, and limitations on the complexity and density of advanced chip designs, such as 3D integrated circuits (3D ICs). The constant struggle with alignment has been a major bottleneck, slowing down innovation and increasing the cost of next-generation electronics.\n\nBy introducing a system that is far more tolerant to misalignment, this technology dramatically reduces these manufacturing challenges, enabling higher yields, lower costs, and facilitating the development of more complex and powerful devices. Keywords: alignment problem, manufacturing bottleneck, yield loss, direct bonding challenges, microelectronics cost, 3D IC limitations.","question":"What problem does Increased Contact Alignment Tolerance for Direct Bonding solve?"},{"answer":"The patent data for \"Increased Contact Alignment Tolerance for Direct Bonding\" (US-9852988) does not explicitly list the inventors or assignee in the provided abstract. This information is typically found in the full patent document, which would detail the specific individuals who developed the invention and the company or entity to which the patent rights are assigned.\n\nHowever, the nature of this innovation suggests it originated from research and development efforts within the semiconductor manufacturing or advanced packaging industry. Such breakthroughs often come from teams of engineers and scientists working at leading technology companies or research institutions focused on microfabrication and materials science. To identify the exact inventors and assignee, one would need to consult the full official patent record. Keywords: patent inventors, assignee, semiconductor research, microfabrication R&D, intellectual property.","question":"Who invented Increased Contact Alignment Tolerance for Direct Bonding?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent offers several significant benefits for microelectronics manufacturing and device performance.\n\nFirstly, and most importantly, it dramatically **improves alignment tolerance**. This means that the precise alignment of substrates during direct bonding becomes far less critical, leading to significantly higher manufacturing yields and reduced waste. Secondly, it **reduces production costs** by lessening the reliance on ultra-expensive, high-precision alignment equipment and by minimizing scrap rates. Thirdly, the technology **minimizes parasitic capacitance**, an unwanted electrical effect that can degrade signal integrity and increase power consumption in high-speed circuits, thereby improving overall device performance and efficiency.\n\nAdditionally, the invention helps in **mitigating dishing effects** during fabrication, ensuring better surface planarity and more robust direct bonds. Overall, this innovation enables the development and mass production of more complex, reliable, and high-performance 3D integrated circuits and advanced heterogeneous systems. Keywords: manufacturing benefits, alignment improvement, cost reduction, parasitic capacitance, device performance, yield increase.","question":"What are the key benefits of Increased Contact Alignment Tolerance for Direct Bonding?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent differentiates itself from prior art by fundamentally changing the approach to achieving electrical contact during direct bonding. Prior art typically relies on achieving near-perfect, direct overlap of discrete conductive contact pads on two substrates, often requiring sub-100nm precision.\n\nIn contrast, this invention moves away from this 'brute force' precision by introducing elongated, non-parallel conductive contact features. Electrical contact is made at the *intersections* of these features, rather than requiring precise area-to-area alignment. This design inherently provides a much larger permissible window for lateral misalignment, a stark departure from the stringent requirements of traditional methods.\n\nFurthermore, the patent's two-stage bonding process – where non-metallic regions bond first for mechanical stability, followed by electrical contact engagement – is a key differentiator. Prior art often attempts to achieve both mechanical and electrical bonding simultaneously under tight alignment constraints. This decoupled approach offers superior robustness and flexibility compared to conventional methods. Keywords: prior art comparison, alignment differentiation, contact design, two-stage bonding, manufacturing innovation, direct bonding technology.","question":"How is Increased Contact Alignment Tolerance for Direct Bonding different from prior art?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent is set to have a profound impact across several key industries reliant on advanced microelectronics.\n\nPrimarily, it will revolutionize the **semiconductor manufacturing industry** by enabling higher yields and lower costs for complex 3D integrated circuits (3D ICs) and heterogeneous integration. This, in turn, will benefit **consumer electronics** manufacturers, allowing for the creation of more powerful, compact, and energy-efficient smartphones, laptops, wearables, and smart home devices. The **automotive industry** will see advancements in autonomous driving systems and in-car intelligence, which demand highly integrated and reliable chips.\n\nFurthermore, the **artificial intelligence (AI)** and **high-performance computing (HPC)** sectors will benefit from the ability to produce more complex and efficient AI accelerators and processors. The **medical device industry** will also gain from more compact and reliable sensors and diagnostic tools. Essentially, any industry pushing the boundaries of miniaturization, performance, and integration in electronics will be positively impacted by this technology. Keywords: semiconductor industry, 3D IC impact, consumer electronics, AI hardware, automotive electronics, medical devices, heterogeneous integration.","question":"What industries will Increased Contact Alignment Tolerance for Direct Bonding impact?"},{"answer":"The patent \"Increased Contact Alignment Tolerance for Direct Bonding\" (US-9852988) was filed on **2016-12-15**.\n\nIt was subsequently published on **2017-12-26**. The publication date typically signifies when the patent application becomes publicly available. The grant date (when the patent is officially issued) would be a later date, but the provided information only includes the filing and publication dates. These dates are crucial for understanding the patent's novelty, its position within the technological timeline, and its enforceable period. Keywords: patent filing date, publication date, patent timeline, US-9852988 dates, intellectual property history.","question":"When was Increased Contact Alignment Tolerance for Direct Bonding filed/granted?"},{"answer":"The commercial applications of the Increased Contact Alignment Tolerance for Direct Bonding patent are extensive, particularly in high-growth areas of microelectronics.\n\nOne major application is in **3D integrated circuit (3D IC) manufacturing**, enabling the cost-effective stacking of logic, memory, and specialized processors for high-performance computing, AI accelerators, and data centers. It will also be crucial for **heterogeneous integration**, allowing different types of components (e.g., silicon, photonics, MEMS, RF) to be combined into highly optimized 'chiplet' systems for diverse applications. In **consumer electronics**, this technology will facilitate the creation of smaller, more powerful, and energy-efficient devices like smartphones, smartwatches, and augmented/virtual reality headsets.\n\nFurthermore, it has applications in **advanced sensor technologies**, where multiple sensor layers need to be precisely integrated, and in **power electronics**, where robust and efficient bonding is critical. The ability to achieve higher yields and lower manufacturing costs will make these advanced applications more economically viable for mass production. Keywords: commercial applications, 3D ICs, heterogeneous integration, consumer electronics, AI accelerators, advanced sensors, power electronics.","question":"What are the commercial applications of Increased Contact Alignment Tolerance for Direct Bonding?"},{"answer":"The Increased Contact Alignment Tolerance for Direct Bonding patent lays a robust foundation for numerous future developments in microelectronics. We can expect ongoing research and engineering efforts to further optimize and expand its capabilities.\n\nFuture developments might include the exploration of **adaptive contact geometries**, where the elongated features could be dynamically adjusted or reconfigured to optimize performance for different device types or even compensate for real-time process variations. There could be advancements in **self-assembly techniques** that leverage the inherent alignment tolerance of this design, potentially leading to even more scalable and cost-effective manufacturing processes. Integration with **novel materials** and emerging technologies, such as quantum computing components or neuromorphic chips, is also a strong possibility, as the forgiving bonding process could simplify their integration with traditional silicon platforms.\n\nFurthermore, advancements in **EDA (Electronic Design Automation) tools** will likely incorporate design rules specifically tailored to this technology, allowing engineers to more effectively simulate and optimize complex 3D architectures that leverage the increased alignment tolerance. This patent will continue to inspire innovation in robust, high-yield, and cost-effective advanced packaging solutions. Keywords: future developments, adaptive geometry, self-assembly, novel materials, EDA tools, advanced packaging, microelectronics roadmap.","question":"What are the future developments expected for Increased Contact Alignment Tolerance for Direct Bonding?"}],"topics":["Increased Contact Alignment Tolerance for Direct Bonding","direct bonding","semiconductor manufacturing","alignment tolerance","3D IC stacking","relentless","drive","enhanced"],"tech_cluster":null},"seo":{"title":"Increased Contact Alignment Tolerance for Direct Bonding - Patent US-9852988","description":"Discover the 'Increased Contact Alignment Tolerance for Direct Bonding' patent (US-9852988). This innovation boosts manufacturing yield & reduces parasitic capacitance in direct bonding processes.","keywords":["Increased Contact Alignment Tolerance for Direct Bonding","direct bonding","semiconductor manufacturing","alignment tolerance","3D IC stacking","microelectronics","parasitic capacitance","wafer bonding","patent US-9852988","fabrication yield","heterogeneous integration","chiplet technology"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9852988","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9852988","citation_suggestion":"Patentable. \"Increased contact alignment tolerance for direct bonding\" (US-9852988). https://patentable.app/patents/US-9852988","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9852988","json":"https://patentable.app/api/llm-context/US-9852988","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:41:25.158Z"}