{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853006","patent":{"patent_number":"US-9853006","title":"Semiconductor device contact structure having stacked nickel, copper, and tin layers","assignee":null,"inventors":[],"filing_date":"2016-06-24T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer."},"analysis":{"summary":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent (US-9853006) introduces a groundbreaking solution for enhancing the reliability and manufacturability of three-dimensional (3D) multi-die semiconductor packages. The core innovation is a specialized multilayer contact structure designed to prevent a critical failure mode: the transfer of adhesive material to contact pads during the die thinning process.\n\nIn 3D packaging, individual dies are often thinned significantly to achieve compact form factors. This thinning typically involves temporarily attaching a die to a handler with adhesive. A major problem arises when this adhesive contaminates the electrical contact points on the die's surface, compromising the ability to form reliable solder connections for stacking. Existing solutions often involve complex and not always effective post-thinning cleaning steps.\n\nThis technology addresses this challenge by proposing a contact metallurgy that inherently inhibits adhesive transfer. The patent describes a contact structure comprising stacked layers of specific materials. One embodiment features a Nickel layer, a Copper layer upon it, and a Nickel-Iron layer on top of the Copper. Another embodiment details a Nickel layer, a Copper-Tin layer upon the Nickel, and a pure Tin layer on the Copper-Tin. These material choices are strategic: Nickel provides adhesion and acts as a diffusion barrier, Copper offers high conductivity, and Tin (or Copper-Tin) ensures excellent wettability to solder, which is crucial for robust interconnections.\n\nThe business value and applications of this innovation are substantial. By ensuring pristine, solder-ready contact surfaces, the invention significantly improves manufacturing yields for 3D multi-die packages, reduces costly rework, and enhances the overall reliability of electronic devices. This enables the continued miniaturization and performance scaling of advanced semiconductor products, including high-bandwidth memory (HBM), system-in-package (SiP) solutions, and next-generation processors.\n\nThe market opportunity for this technology is vast, spanning the entire electronics industry where 3D integration is becoming increasingly prevalent. Companies adopting this approach can gain a significant competitive advantage by producing more reliable and cost-effective advanced semiconductor components. This patent provides a foundational technology for the future of high-density electronic packaging.","layman_explanation":"<h3>What Problem Does This Solve?</h3>\n\nImagine you're building a highly advanced, miniature city where buildings (computer chips) need to be stacked incredibly close together to save space and make everything run faster. To stack these buildings, you first need to make some of them super thin. The way engineers do this is by temporarily gluing a protective cover to one side of a chip, then sanding down the other side. The big problem arises when tiny bits of that temporary glue accidentally stick to the 'doors' or 'windows' (electrical contacts) where you want to connect your buildings. If these connection points are sticky or dirty, the next building won't connect properly, leading to unstable structures, wasted materials, and a city that doesn't function reliably. This patent, Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers, directly tackles this critical issue of ensuring clean, reliable connections in these ultra-compact, stacked electronic 'cities.'\n\n<h3>How Does It Work?</h3>\n\nInstead of relying on complicated cleaning crews to scrub away glue residues after the thinning process, this innovation focuses on prevention. Think of it like giving the 'doors' and 'windows' of your chips a special, multi-layered protective coating right from the start. This coating isn't just one material; it's a strategic stack of different metals. For instance, it might start with a strong base layer of Nickel, then a highly conductive layer of Copper, and finally, an outermost layer of Tin. The magic of this combination is that the outermost layer is specifically designed to either repel the temporary adhesive altogether or to allow any adhesive that does touch it to be easily removed without leaving behind any damaging residue. The Tin layer is particularly important because it's exceptionally good at bonding with the 'super glue' (solder) used to make the permanent electrical connections. So, when it's time to permanently connect the chips, their 'doors' and 'windows' are perfectly clean and ready for a strong, reliable bond.\n\n<h3>Why Does This Matter?</h3>\n\nThis innovation holds immense significance for the entire electronics industry. First, it dramatically improves **manufacturing yields**. Fewer chips are wasted due to faulty connections, which directly translates to lower production costs and higher profitability for chip manufacturers. Second, it leads to **more reliable and durable electronic devices**. Whether it's your smartphone, a high-performance server, or an automotive control unit, the underlying chips will have more robust internal connections, meaning fewer malfunctions and a longer lifespan for the product. Third, it **enables further miniaturization**. With the confidence that connections will remain pristine, engineers can design even thinner chips and more densely packed 3D structures, pushing the boundaries of what's possible in terms of device size and performance. This patent provides a foundational technology that underpins the next generation of computing, communication, and AI hardware, offering a clear competitive edge to companies that adopt it.\n\n<h3>What's Next?</h3>\n\nThe Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers is set to become a standard in high-volume, advanced semiconductor packaging. Its adoption will likely accelerate the development of more sophisticated chiplet architectures and high-bandwidth memory solutions. For investors, this represents a technology that de-risks a critical manufacturing process, potentially leading to substantial returns through increased efficiency and enhanced product quality across the electronics value chain. Expect to see this approach integrated into the manufacturing of leading-edge processors and specialized integrated circuits in the coming years, silently powering the next wave of technological innovation.","technical_analysis":"The patent \"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers\" (US-9853006) details a critical advancement in the fabrication of 3D multi-die semiconductor packages, focusing specifically on the integrity and reliability of inter-die contacts. The technical problem addressed is the pervasive issue of adhesive contamination on contact pads during the back-side thinning of semiconductor dies, a process essential for achieving compact 3D stacked architectures.\n\n**Problem Statement:** In 3D integration, individual dies are often mounted onto temporary handlers using adhesives for mechanical support during thinning operations (e.g., grinding or chemical-mechanical planarization). Residual adhesive material, or components thereof, can transfer to the exposed electrical contact pads on the thinned die. This contamination significantly degrades the wettability of these pads to solder, which is the primary bonding agent for creating electrical and mechanical interconnections between stacked dies. Poor solder wetting leads to high contact resistance, voids, unreliable joints, or complete open circuits, severely impacting device performance, manufacturing yield, and long-term reliability.\n\n**Technical Architecture and Implementation Details:**\nThe invention proposes a multilayer contact structure, or layered metallurgy, designed to intrinsically inhibit adhesive transfer while maintaining excellent solderability. This approach moves beyond reactive cleaning methods by engineering the contact surface itself to be resistant to contamination.\n\nThe patent outlines two primary exemplary embodiments for this layered metallurgy:\n\n1.  **Nickel (Ni) / Copper (Cu) / Nickel-Iron (NiFe) Stack:**\n    *   **Nickel Layer:** This foundational layer is typically deposited directly onto the underlying semiconductor substrate (e.g., a diffusion barrier layer or direct contact to active regions). Its primary functions include providing strong adhesion to the substrate, acting as an effective diffusion barrier to prevent intermixing of subsequent metallic layers with the semiconductor material, and offering a stable, low-resistance interface.\n    *   **Copper Layer:** Deposited upon the Nickel layer, Copper serves as a highly conductive intermediate layer. Its excellent electrical conductivity is crucial for signal integrity and power delivery within the interconnect structure. Copper also provides a suitable interface for the subsequent Nickel-Iron layer.\n    *   **Nickel-Iron Layer:** This outermost layer is critical for the adhesive inhibition mechanism. NiFe alloys can be tailored to exhibit specific surface energy characteristics that reduce the adhesion strength of temporary bonding adhesives. This makes the adhesive less likely to transfer or, if transferred, more easily removed without leaving detrimental residues that impair solderability. The NiFe layer also contributes to the overall mechanical robustness of the contact.\n\n2.  **Nickel (Ni) / Copper-Tin (CuSn) / Tin (Sn) Stack:**\n    *   **Nickel Layer:** Similar to the first embodiment, this layer provides adhesion to the substrate and acts as a diffusion barrier.\n    *   **Copper-Tin Layer (Intermetallic Compound - IMC):** Deposited upon the Nickel layer, this is an alloy or intermetallic compound of Copper and Tin. CuSn IMCs are known for their good mechanical properties and can form stable interfaces. This layer can be formed during deposition or through a subsequent annealing step. It serves as a robust intermediary and can contribute to the overall solderability characteristics.\n    *   **Tin Layer:** This is the outermost, critical layer. Tin is highly desirable for contact structures due to its exceptional wettability to a wide range of lead-free solders. By placing pure Tin as the outermost layer, and protecting it with the underlying Nickel and CuSn layers, the invention ensures that the final surface presented for solder attachment is pristine and highly receptive. The CuSn layer beneath also helps manage the kinetics of IMC formation during the actual soldering process, contributing to stable joint formation.\n\n**Algorithm Specifics and Performance Characteristics:**\nThe \"algorithm\" here refers to the sequential deposition and material selection logic. The choice of materials and their stacking order is based on principles of surface chemistry, materials science, and solid-state diffusion. The core \"algorithm\" is to create a surface that is either inherently non-wetting to the adhesive or easily releasable, while simultaneously being highly wettable to solder. Performance is measured by:\n*   **Adhesive Residue Coverage:** Minimizing or eliminating adhesive residue on contact pads post-thinning.\n*   **Solder Wettability:** Achieving low contact angles and uniform spreading of solder on the pads.\n*   **Contact Resistance:** Ensuring low and stable electrical resistance across the solder joint.\n*   **Mechanical Integrity:** Providing robust adhesion between layers and strong solder joint mechanical strength.\n\n**Integration Patterns and Code-Level Implications:**\nThis innovation is integrated at the wafer or die-level metallization step. It impacts the front-end-of-line (FEOL) and back-end-of-line (BEOL) processing by defining the final contact pad metallurgy. For process engineers, this means adjusting deposition parameters (e.g., sputtering, electroplating) for each layer, controlling layer thickness, and potentially optimizing annealing steps. It also influences subsequent steps like temporary bonding adhesive selection and thinning processes, as the inherent resistance of the new contact structure may allow for a wider process window or simpler post-thinning cleaning protocols. While there are no direct 'code-level implications' in the software sense, it influences the 'recipe' or 'process code' for wafer fabrication equipment.\n\n**Overall Impact:**\nThe Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent offers a robust, materials-science-driven solution to a fundamental manufacturing challenge in 3D packaging. By ensuring the integrity of inter-die contacts, this technology directly contributes to higher performance, greater reliability, and increased manufacturing efficiency for advanced semiconductor devices, paving the way for further miniaturization and integration in the electronics industry.","business_analysis":"The patent \"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers\" (US-9853006) represents a crucial advancement with significant commercial implications for the semiconductor industry, particularly within the burgeoning field of 3D multi-die packaging. This innovation addresses a critical manufacturing bottleneck, thereby unlocking substantial market opportunities and competitive advantages.\n\n**Market Opportunity Size:**\nThe global semiconductor packaging market is a multi-billion dollar industry, with 3D packaging and advanced heterogeneous integration being key growth drivers. As of recent estimates, the advanced packaging market is projected to reach well over $50 billion by the mid-2020s, with a significant compound annual growth rate (CAGR). The problem of adhesive contamination during die thinning is endemic to many 3D stacking processes. By providing a robust solution, this patent targets a fundamental pain point that affects a substantial portion of this market. Any company involved in 3D NAND, High-Bandwidth Memory (HBM), chiplet architectures, or advanced System-in-Package (SiP) solutions stands to benefit immensely. The addressable market includes major IDMs (Integrated Device Manufacturers), OSATs (Outsourced Semiconductor Assembly and Test) providers, and fabless companies requiring sophisticated packaging solutions.\n\n**Competitive Advantages:**\nCompanies that adopt or license the technology described in Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers will gain several distinct competitive advantages:\n\n1.  **Higher Yields and Lower Costs:** By intrinsically preventing adhesive contamination, the technology dramatically reduces defect rates associated with poor solder joints in 3D packages. This translates directly into higher manufacturing yields, significantly lowering per-unit production costs and improving profitability.\n2.  **Enhanced Product Reliability:** More reliable interconnections lead to more robust and durable end products. This is a critical differentiator in markets where product lifespan and performance stability are paramount, such as automotive, high-performance computing, and enterprise electronics.\n3.  **Enabling Advanced Designs:** The assurance of pristine contacts allows designers to push the boundaries of miniaturization and integration. This enables the development of even thinner dies and more complex 3D stacks, facilitating next-generation products that competitors without this technology might struggle to produce reliably.\n4.  **Faster Time-to-Market:** Simplified manufacturing processes, potentially reducing or eliminating complex post-thinning cleaning steps, can accelerate product development cycles and time-to-market for new 3D integrated devices.\n5.  **IP Protection and Licensing Opportunities:** Holding this patent provides a strong intellectual property position, allowing the assignee to license the technology, generate royalty revenue, or use it as a strategic asset in partnerships and joint ventures.\n\n**Revenue Potential and Business Models:**\nRevenue potential can be realized through several business models:\n*   **Direct Implementation:** Semiconductor manufacturers and OSATs can integrate this technology into their own production lines, leading to cost savings, increased throughput, and higher-margin products.\n*   **Licensing:** The patent holder can license the technology to other industry players, generating recurring royalty income.\n*   **Joint Ventures/Partnerships:** Collaborating with key players to develop specialized 3D packaging solutions that leverage this innovation.\n*   **Equipment/Material Sales:** Companies providing deposition equipment or specialized materials tailored to this layered metallurgy could also see increased demand.\n\n**Strategic Positioning:**\nThis patent strategically positions its owner at the forefront of advanced packaging technology. It addresses a fundamental reliability issue that is becoming more critical as 3D integration scales. This positions the technology as an enabler for future generations of high-performance and power-efficient devices, securing a vital role in the supply chain for leading-edge electronics.\n\n**ROI Projections:**\nWhile specific ROI figures would depend on market adoption and licensing terms, the potential for significant returns is high. A 5-10% improvement in manufacturing yield for 3D packages, combined with reduced rework and improved product reliability, can translate into hundreds of millions to billions of dollars in savings and increased revenue across the industry. For a licensee, the ROI would come from reduced operational costs, improved product quality, and the ability to compete in higher-value market segments. For the patent holder, licensing revenue from a widely adopted foundational technology could be substantial and long-lasting. This innovation is not just about incremental gains; it's about de-risking a core manufacturing process that underpins the future of electronics.","faqs":[{"answer":"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers is a groundbreaking patent (US-9853006) that introduces an innovative multilayer contact structure designed to significantly improve the reliability and manufacturing efficiency of 3D multi-die semiconductor packages. At its core, this invention addresses the critical issue of adhesive contamination on electrical contact pads during the die thinning process. By using a specifically engineered stack of metallic layers, it ensures that these crucial connection points remain pristine and ready for robust solder attachment.\n\nThis technology provides an intrinsic solution to a pervasive problem in advanced semiconductor manufacturing. Instead of relying on complex and often incomplete post-thinning cleaning methods, the layered metallurgy itself acts as a protective barrier. The specific materials—Nickel, Copper, and Tin (or Nickel-Iron)—are chosen for their unique properties that synergistically inhibit adhesive transfer while maintaining excellent solder wettability.\n\nEssentially, the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers creates a 'self-cleaning' or 'contamination-resistant' surface for inter-chip connections. This ensures higher quality solder joints, which are fundamental for the performance and longevity of devices utilizing 3D stacked chips. This patent is a testament to the power of materials science in solving complex engineering challenges at the microscopic level.\n\nKeywords: semiconductor contact structure, 3D multi-die package, layered metallurgy, adhesive inhibition, US-9853006, chip manufacturing, electronic device reliability.","question":"What is Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers works by implementing a carefully designed, multi-layered metallic stack as the electrical contact on a semiconductor die. This layered metallurgy is engineered to perform two critical functions simultaneously: inhibit adhesive transfer during die thinning and ensure optimal solder wettability for subsequent bonding.\n\nDuring 3D multi-die packaging, individual dies are often made very thin by attaching them to a temporary handler with an adhesive and then grinding or etching the back side. The problem is that this adhesive can contaminate the contact pads. This invention overcomes this by creating a surface that is either inherently resistant to the adhesive or allows any adhesive contact to be easily removed without leaving harmful residues.\n\nThe patent describes two main embodiments. One involves a Nickel layer for adhesion and diffusion barrier, a Copper layer for high conductivity, and an outermost Nickel-Iron layer designed with specific surface properties to repel adhesives. The second embodiment uses a Nickel layer, a Copper-Tin alloy layer, and then a pure Tin layer as the outermost surface. Tin is highly wettable to solder, ensuring perfect connections, while the underlying layers protect it and prevent contamination. This proactive material design is key to its effectiveness.\n\nKeywords: layered metallurgy, adhesive inhibition, solder wettability, Nickel layer, Copper layer, Tin layer, Nickel-Iron layer, 3D packaging process, semiconductor contacts.","question":"How does Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers work?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent solves a critical and pervasive problem in 3D multi-die semiconductor packaging: the contamination of electrical contact pads by temporary bonding adhesives during the die thinning process. In advanced electronics, individual chips must be thinned significantly to allow for vertical stacking, enabling more compact and powerful devices.\n\nThe challenge arises because these dies are temporarily attached to a handler using an adhesive for mechanical support during thinning. Unfortunately, residues from this adhesive frequently transfer onto the delicate electrical contact points (where solder connections are later made). Even microscopic adhesive contamination can severely compromise the contact pad's ability to be properly wetted by solder, leading to poor electrical connections, increased resistance, or complete connection failures.\n\nThis problem results in significant manufacturing yield losses, increased production costs, and reduced overall device reliability. Prior art solutions often involved complex, costly, and not always effective post-thinning cleaning steps. The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers provides an elegant, intrinsic solution by engineering the contact metallurgy itself to prevent this contamination from occurring in the first place, thereby ensuring pristine, solder-ready surfaces.\n\nKeywords: adhesive contamination, die thinning problem, 3D packaging challenges, solder wettability issues, manufacturing yield loss, semiconductor reliability, contact integrity, electronic device defects.","question":"What problem does Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers solve?"},{"answer":"The patent US-9853006, titled \"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers,\" does not explicitly list the inventors or assignee in the provided abstract data. However, patents are typically filed by individuals (inventors) and then often assigned to a corporation or research institution.\n\nIn the context of semiconductor technology, such innovations are usually the result of extensive research and development efforts within leading chip manufacturing companies, advanced packaging houses (OSATs), or specialized materials science firms. These entities invest heavily in R&D to overcome manufacturing bottlenecks and push the boundaries of miniaturization and performance.\n\nWhile the specific individuals are not named here, the innovation represents a collective effort in advancing the state of the art in materials science and semiconductor process engineering. The development of the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers would have involved expertise in metallurgy, surface chemistry, thin-film deposition, and 3D integration processes to devise such a robust solution to adhesive contamination.\n\nKeywords: patent inventors, patent assignee, semiconductor innovation, R&D, advanced packaging companies, materials science, US-9853006.","question":"Who invented Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers offers several significant benefits that are poised to revolutionize 3D multi-die semiconductor packaging:\n\nFirstly, it leads to **significantly higher manufacturing yields**. By intrinsically preventing adhesive contamination on contact pads, the number of defective dies due to poor solder connections is drastically reduced. This translates directly into more efficient production and lower manufacturing costs.\n\nSecondly, it ensures **enhanced product reliability and longevity**. Pristine, contamination-free solder joints are inherently more robust and stable over time. This reduces the likelihood of device failures, leading to longer-lasting electronic products and improved customer satisfaction, particularly critical in high-reliability applications like automotive or medical devices.\n\nThirdly, this technology **enables further miniaturization and performance scaling**. With the confidence that inter-die connections will be reliable, engineers can design even thinner dies and more densely packed 3D stacks. This pushes the boundaries of what's possible in terms of device compactness and processing power, paving the way for next-generation electronics.\n\nFinally, it can **simplify the manufacturing process**. By solving the contamination problem at the material level, the need for complex, costly, and often imperfect post-thinning cleaning steps can be minimized or even eliminated, streamlining the overall production flow. The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers provides a foundational solution for the future of advanced electronics.\n\nKeywords: manufacturing yields, product reliability, miniaturization, performance scaling, process simplification, 3D packaging benefits, semiconductor advancements, contact integrity.","question":"What are the key benefits of Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers distinguishes itself from prior art by offering a proactive, intrinsic material-level solution to adhesive contamination in 3D multi-die packaging, rather than a reactive or incomplete one.\n\nPrior art approaches primarily focused on either aggressive post-thinning cleaning methods (e.g., plasma etching, solvent washes) or developing temporary bonding adhesives with improved release characteristics. The limitations of these methods include added process complexity, increased manufacturing time and cost, potential for damage to delicate die structures, and often, incomplete removal of residues, still leading to compromised solder wettability.\n\nIn contrast, this patent's innovation lies in engineering the contact metallurgy itself. The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers utilizes a specific stack of materials (like Nickel, Copper, and Tin) where the outermost layer is designed to inherently inhibit the adhesion of temporary bonding agents. This means contamination is largely prevented at the source, ensuring that the contact surface remains pristine throughout the entire manufacturing flow, from thinning to final solder attachment.\n\nThis fundamental shift from 'cleaning up a mess' to 'preventing the mess' provides superior reliability, higher yields, and a more streamlined manufacturing process compared to prior art. It's a foundational change in how contact integrity is managed in advanced semiconductor packaging.\n\nKeywords: prior art comparison, adhesive contamination solution, intrinsic protection, layered metallurgy, post-thinning cleaning, semiconductor innovation, 3D packaging differentiation, material engineering.","question":"How is Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers different from prior art?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent will have a profound impact across numerous industries that rely on advanced, high-performance, and compact electronic devices. Its core contribution to reliable 3D multi-die packaging makes it a foundational technology for future innovations.\n\n**Consumer Electronics:** This includes smartphones, tablets, laptops, wearables, and smart home devices. The ability to create thinner, more powerful chips with higher reliability will lead to sleeker designs, faster processing, and longer-lasting gadgets.\n\n**High-Performance Computing (HPC) and Data Centers:** Critical for servers, supercomputers, and cloud infrastructure, where 3D stacked memory (like HBM) and chiplet architectures are crucial for achieving massive data throughput and energy efficiency. Reliable contacts ensure the integrity of these complex systems.\n\n**Artificial Intelligence (AI) and Machine Learning:** AI accelerators and specialized processors heavily leverage advanced packaging for high-bandwidth communication between compute and memory. This technology ensures the robust interconnects needed for demanding AI workloads.\n\n**Automotive Electronics:** Essential for advanced driver-assistance systems (ADAS), infotainment, and autonomous vehicles, where chip reliability is paramount for safety and performance. This innovation contributes to the dependability of critical in-car electronic systems.\n\n**Aerospace and Defense:** For mission-critical systems where extreme reliability and performance in harsh environments are non-negotiable. The enhanced robustness provided by this contact structure is highly valuable.\n\n**Internet of Things (IoT):** Enabling smaller, more power-efficient, and reliable chips for a vast array of interconnected devices, from industrial sensors to smart city infrastructure. The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers is a key enabler for the continued evolution of all these sectors.\n\nKeywords: consumer electronics, high-performance computing, AI hardware, automotive electronics, aerospace, IoT, industry impact, 3D packaging applications, semiconductor market.","question":"What industries will Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers impact?"},{"answer":"The patent \"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers\" (US-9853006) was filed on **June 24, 2016**. This date marks when the application was formally submitted to the patent office, initiating the examination process.\n\nThe patent was subsequently granted and published on **December 26, 2017**. The publication date signifies when the patent document became publicly available, detailing the invention's specifications, claims, and drawings.\n\nThis timeline indicates a relatively swift examination process, suggesting that the innovation was recognized for its novelty and significance in the rapidly evolving field of semiconductor manufacturing. The period between filing and grant is crucial, as it covers the patent office's review, potential amendments, and ultimately, the decision to issue the patent. The grant of the patent on December 26, 2017, provides the patent holder with exclusive rights to the invention for a specified period, typically 20 years from the earliest filing date.\n\nKeywords: patent filing date, patent publication date, US-9853006, patent grant, intellectual property timeline, semiconductor patent, invention timeline, patent process.","question":"When was Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers are vast and critical for the ongoing advancement of the electronics industry, particularly in areas leveraging 3D multi-die packaging. This technology directly impacts the manufacturability and reliability of high-performance semiconductor components.\n\n**High-Bandwidth Memory (HBM):** This is a primary application. HBM stacks multiple DRAM dies vertically on a base logic die, requiring extremely reliable through-silicon via (TSV) and micro-bump connections. This patent's solution ensures these critical contacts are pristine, boosting HBM yield and performance for GPUs, FPGAs, and AI accelerators.\n\n**Chiplet Architectures:** As monolithic dies become prohibitively expensive, chiplets (smaller, specialized dies) are gaining traction. This technology facilitates the reliable interconnection of diverse chiplets into a single package, enabling more flexible and cost-effective system-on-chip (SoC) designs across various applications.\n\n**System-in-Package (SiP) Solutions:** For integrating multiple functions (processor, memory, RF, sensors) into a single compact package, the reliability of inter-die contacts is paramount. This patent enhances SiP performance and yield for mobile, IoT, and network devices.\n\n**Advanced Processors (CPUs/GPUs):** Future generations of CPUs and GPUs will increasingly rely on 3D stacking of cache, logic, and even specialized accelerators. This innovation provides the foundational contact integrity needed for these complex, high-value components.\n\n**Automotive and Industrial Electronics:** In these sectors, reliability and durability are non-negotiable. The enhanced contact integrity offered by the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers ensures that critical control units and sensors perform reliably in demanding environments. These commercial applications are foundational for the next wave of technological innovation.\n\nKeywords: HBM, chiplet architecture, SiP solutions, advanced processors, automotive electronics, commercial applications, 3D packaging markets, semiconductor industry.","question":"What are the commercial applications of Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers?"},{"answer":"The Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent lays a robust foundation for exciting future developments in advanced semiconductor packaging. As the industry continues to push the boundaries of miniaturization and integration, this technology will likely evolve in several key areas.\n\nOne expected development is the **optimization of material compositions and layer thicknesses**. Researchers may explore novel alloys or variations of Nickel-Iron or Copper-Tin layers to further enhance adhesive inhibition properties, improve solder joint reliability, or reduce contact resistance even further. This could involve tailoring surface energies more precisely for specific temporary bonding adhesives or soldering processes.\n\nAnother area of future development will be its **integration into finer pitch interconnects**. As micro-bump and hybrid bonding pitches shrink to sub-10 µm levels, the challenge of contamination becomes even more acute. This technology will be adapted and refined to ensure pristine contacts at these extremely small scales, enabling higher I/O density and faster communication between stacked dies.\n\nFurthermore, the principles behind the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers could be **extended to other advanced packaging techniques**. This might include applications in wafer-to-wafer bonding, die-to-wafer bonding, or even heterogeneous integration of dissimilar materials (e.g., silicon with III-V semiconductors or photonics). The core concept of engineering an intrinsic contamination-resistant contact surface has broad applicability.\n\nFinally, **process integration and manufacturing scalability** will continue to be refined. This includes developing more efficient deposition methods, in-situ monitoring techniques for quality control, and demonstrating compatibility with next-generation manufacturing equipment. The goal is to make this advanced contact structure a ubiquitous and cost-effective standard across the entire 3D packaging industry. These developments will solidify the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers as a cornerstone technology for future electronics.\n\nKeywords: future developments, material optimization, finer pitch interconnects, heterogeneous integration, manufacturing scalability, advanced packaging roadmap, semiconductor research, contact structure evolution.","question":"What are the future developments expected for Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers?"}],"topics":["semiconductor device contact structure","stacked nickel copper tin layers","3D multi-die package","adhesive transfer inhibition","die thinning","technical","background","advanced"],"tech_cluster":null},"seo":{"title":"Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers - Patent US-9853006","description":"Discover the Semiconductor Device Contact Structure Having Stacked Nickel, Copper, and Tin Layers patent: a breakthrough in 3D packaging preventing adhesive contamination for reliable chip stacking.","keywords":["semiconductor device contact structure","stacked nickel copper tin layers","3D multi-die package","adhesive transfer inhibition","die thinning","solder wettability","layered metallurgy","semiconductor manufacturing","advanced packaging","US-9853006 patent","chip stacking reliability","electronic device contacts"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853006","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853006","citation_suggestion":"Patentable. \"Semiconductor device contact structure having stacked nickel, copper, and tin layers\" (US-9853006). https://patentable.app/patents/US-9853006","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853006","json":"https://patentable.app/api/llm-context/US-9853006","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:16:50.669Z"}