{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853008","patent":{"patent_number":"US-9853008","title":"Connecting techniques for stacked CMOS devices","assignee":null,"inventors":[],"filing_date":"2016-07-26T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to an integrated chip having an inter-tier interconnecting structure having horizontal components, which is arranged within a semiconductor substrate and configured to electrically couple a first device tier to a second device tier. The integrated chip has a first device tier with a first semiconductor substrate. A first inter-tier interconnecting structure is disposed inside the first semiconductor substrate. The first inter-tier interconnecting structure has a first segment extending in a first direction and a second segment protruding outward from a sidewall of the first segment in a second direction substantially perpendicular to the first direction. A second device tier is electrically coupled to the first device tier by the first inter-tier interconnecting structure."},"analysis":{"summary":"The patent, \"Connecting Techniques for Stacked Cmos Devices\" (US-9853008), introduces a groundbreaking inter-tier interconnecting structure designed to enhance the performance and density of stacked CMOS devices. At its core, this innovation provides a novel method for electrically coupling multiple device tiers within an integrated chip, moving beyond traditional vertical-only connections.\n\nThe primary problem this technology addresses is the inherent inefficiency and limitations of existing interconnect solutions in 3D integrated circuits. As chip designers strive to stack more layers to increase functionality and reduce footprint, the challenge of reliably and efficiently transmitting signals between these layers becomes critical. Traditional vertical interconnects often consume significant silicon area, introduce signal integrity issues, and complicate thermal management.\n\nThe key technical approach involves embedding horizontal components of the interconnecting structure directly within the semiconductor substrate of a first device tier. This structure comprises a first segment extending in one direction, with a second segment protruding perpendicularly from its sidewall. This allows for flexible and optimized routing of electrical signals, minimizing the footprint and improving signal propagation characteristics compared to solely vertical connections.\n\nFrom a business perspective, this invention offers substantial value. It enables the development of higher-density, more powerful, and more energy-efficient integrated circuits, which are crucial for advancements in artificial intelligence, high-performance computing, and next-generation mobile devices. By optimizing interconnects, the technology can lead to improved manufacturing yields and reduced costs for advanced 3D chips. This innovation positions companies utilizing it with a significant competitive advantage in the rapidly evolving semiconductor market.\n\nThe market opportunity for this technology is immense, as the demand for compact, high-performance electronics continues to grow. It facilitates the scaling of complex chip architectures that were previously limited by interconnect bottlenecks, opening doors for new product categories and capabilities across various industries.","layman_explanation":"### What Problem Does This Solve?\nImagine trying to build a very tall, complex building, like a super-skyscraper, where each floor is a different specialized office or factory. For these floors to work together, they need to communicate constantly, share resources, and transfer information. Traditionally, you'd build many elevator shafts and stairwells straight up through every floor. This works, but it takes up a lot of valuable space on each floor that could be used for offices, and it can create bottlenecks if too many people try to use the same elevator. In the world of microchips, this is similar to how we connect stacked layers of computer processors or memory. As we try to cram more functionality into smaller spaces by stacking chip layers (known as 3D integration), these vertical connections (like through-silicon vias, or TSVs) become a major headache. They consume precious silicon area, can slow down data transfer, and even cause overheating, limiting how powerful and compact our devices can be. Existing solutions are simply not efficient enough for the next generation of electronics.\n\n### How Does It Work?\nThe patent, \"Connecting Techniques for Stacked Cmos Devices,\" offers a brilliant solution by rethinking how these connections are made. Instead of relying solely on those 'straight-up-and-down elevator shafts,' this technology introduces a sophisticated internal road network. Picture the bottom floor of our super-skyscraper. This invention proposes building a main pathway or 'road' *horizontally* within the floor itself. Then, when a connection is needed to the floor above, a smaller 'side-road' or 'ramp' branches off from this main horizontal road, protruding upwards directly to the next floor. This side-road is perpendicular to the main horizontal one. This means signals don't have to travel long vertical distances through multiple layers unless absolutely necessary. They can move efficiently along the horizontal path to the optimal point, then take a short, direct vertical jump.\n\nThis system allows for much more flexible and efficient routing of electrical signals between the stacked layers. By embedding these pathways within the chip's substrate, it frees up surface area on each layer for more active components, leading to denser and more powerful chips. It's like having a hidden, high-speed subway system built into the very structure of the building, making inter-floor travel incredibly fast and efficient without cluttering the main office spaces.\n\n### Why Does This Matter?\nThis innovation is a game-changer for several reasons. Firstly, it enables significantly higher performance. By creating shorter, more direct electrical paths, data can travel faster between chip layers, reducing latency and boosting overall processing speed. This is critical for demanding applications like artificial intelligence, real-time data analytics, and high-performance computing, where every nanosecond counts. Secondly, it allows for much greater chip density. With less space consumed by inefficient interconnects, designers can pack more transistors and memory cells into a given chip area, leading to more powerful and compact devices crucial for smartphones, wearables, and edge computing. Thirdly, it improves power efficiency by reducing signal loss, which translates into longer battery life for mobile devices and lower energy consumption for data centers. Finally, this technology provides a competitive edge. Companies adopting this approach can develop next-generation products that outperform rivals, capture new market segments, and drive significant returns on investment by leading the charge in advanced semiconductor manufacturing.\n\n### What's Next?\nThe \"Connecting Techniques for Stacked Cmos Devices\" patent lays a foundational brick for the future of electronics. We can expect this technology to accelerate the development of highly integrated, multi-functional chips that combine different types of processors, memory, and sensors into a single, seamless package. This will unlock new capabilities in areas like advanced robotics, immersive virtual reality, and even more sophisticated personalized AI. Market adoption will likely begin in high-value, performance-critical applications before trickling down to more mainstream consumer devices. For investors, understanding this patent means recognizing a key enabler for the next wave of computing power and a significant opportunity for growth in the semiconductor ecosystem, as it underpins the very architecture of future smart devices.","technical_analysis":"The \"Connecting Techniques for Stacked Cmos Devices\" patent (US-9853008) presents a sophisticated approach to inter-tier connectivity within 3D integrated circuits, directly addressing the critical challenges of signal integrity, density, and thermal management in stacked architectures. This technical analysis delves into the underlying architecture, implementation details, and performance implications of this innovative interconnect solution.\n\n**Technical Architecture and Core Innovation**\nAt the heart of this invention is an integrated chip comprising at least two device tiers: a first device tier and a second device tier. The defining feature is the novel inter-tier interconnecting structure, which departs from conventional purely vertical through-silicon vias (TSVs). Instead, this technology integrates horizontal components directly within the semiconductor substrate of the first device tier.\n\nSpecifically, the first device tier includes a semiconductor substrate within which the first inter-tier interconnecting structure is disposed. This structure is characterized by:\n\n1.  **First Segment (Horizontal Component):** A segment that extends primarily in a first direction (e.g., along the X-axis or Y-axis of the chip layout). This horizontal routing within the substrate itself is a significant innovation, allowing for more flexible signal distribution and potentially shorter overall path lengths compared to routing entirely on the surface or through the entire thickness of a tier.\n2.  **Second Segment (Perpendicular Protrusion):** A second segment that protrudes outward from a sidewall of the first segment. Crucially, this protrusion extends in a second direction that is substantially perpendicular to the first direction. This perpendicular branching capability provides the means to connect to an adjacent tier (the second device tier) or to other parts of the same tier in a highly localized and optimized manner.\n\nThis architecture allows for a more efficient use of the silicon volume, as connections are not confined to vertical pillars passing through entire layers. It enables a 'local-to-local' connection strategy where signals can be routed horizontally to an optimal point before making a shorter vertical transition to the next tier.\n\n**Implementation Details and Fabrication Considerations**\nImplementing this interconnect structure requires advanced semiconductor fabrication techniques. The disposition of the first inter-tier interconnecting structure *inside* the first semiconductor substrate implies processes such as:\n\n*   **Deep Trench Etching and Filling:** Creating the horizontal segments would likely involve precise deep trench etching into the silicon substrate, followed by dielectric isolation and subsequent metallization (e.g., copper filling) to form the conductive pathways.\n*   **Lithography and Patterning:** High-resolution lithography would be essential to define the intricate patterns of both the horizontal segments and the perpendicular protrusions with the required precision and density.\n*   **Dielectric Isolation:** Ensuring electrical isolation between the interconnect segments and the surrounding silicon substrate, as well as between adjacent interconnects, is critical. This would involve depositing high-quality dielectric materials.\n*   **Tier Bonding:** After the first tier's interconnects are formed, the second device tier would be bonded to the first. The perpendicular segments would then align and electrically couple with corresponding contact pads on the second tier. This could involve direct bonding techniques (e.g., hybrid bonding) or micro-bump bonding.\n\nThe ability to control the depth, width, and material composition of these embedded horizontal and perpendicular segments offers significant design flexibility. For instance, varying the segment dimensions can optimize for different performance characteristics, such as low resistance for power delivery or specific impedance for high-speed data transmission.\n\n**Performance Characteristics and Code-Level Implications**\n\n*   **Signal Integrity:** By enabling shorter and more direct signal paths, this technology significantly reduces parasitic resistance, capacitance, and inductance (RC/RLC effects). This translates to improved signal integrity, lower signal degradation, and reduced crosstalk, which are critical for high-frequency operations in modern processors and memory interfaces.\n*   **Reduced Latency:** Shorter electrical paths directly lead to reduced propagation delays, meaning signals travel faster between tiers. This is a major advantage for applications requiring ultra-low latency, such as in-memory computing or real-time AI inference engines.\n*   **Higher Interconnect Density:** The horizontal routing within the substrate allows for a greater number of connections in a given area compared to bulky TSVs. This high density is crucial for high-bandwidth interfaces (e.g., HBM) and complex logic-on-logic stacking.\n*   **Thermal Management:** Distributing the interconnects horizontally can help spread the thermal load more effectively across the substrate, mitigating localized hot spots that often plague traditional TSV-based 3D stacks. This can lead to more reliable and longer-lasting chips.\n*   **Power Efficiency:** Reduced resistance and capacitance in interconnects lead to lower dynamic power consumption, as less energy is wasted in charging and discharging parasitic capacitances.\n\nAt a code-level or hardware description language (HDL) design implication, this innovation would primarily affect the physical design and layout tools. Electronic Design Automation (EDA) tools would need to incorporate new routing algorithms and design rules that can effectively utilize these embedded horizontal and perpendicular interconnect structures. This would allow chip architects to design more complex and efficient inter-tier communication protocols, enabling novel micro-architectural optimizations that leverage the unique capabilities of this interconnect technology.","business_analysis":"The \"Connecting Techniques for Stacked Cmos Devices\" patent (US-9853008) introduces a pivotal advancement in semiconductor interconnect technology, carrying significant implications for market opportunity, competitive advantage, and strategic positioning within the global electronics industry. As the demand for miniaturization and enhanced performance continues to accelerate, this innovation offers a robust solution to a critical bottleneck in 3D integrated circuit (IC) design.\n\n**Market Opportunity Size and Growth Drivers**\nThe global semiconductor market, valued at over $500 billion, is constantly driven by the need for faster, smaller, and more energy-efficient chips. Within this, the 3D IC and advanced packaging segment is a key growth area, projected to expand significantly as traditional 2D scaling approaches physical limits. This patent directly addresses a core challenge within this high-growth segment: efficient inter-tier connectivity.\n\nApplications such as Artificial Intelligence (AI) accelerators, High-Performance Computing (HPC), data center infrastructure, advanced mobile processors, and autonomous vehicles all rely heavily on dense, high-bandwidth, and low-latency integrated circuits. Connecting Techniques for Stacked Cmos Devices directly serves these markets by enabling the creation of more powerful and compact chips. The market for memory-on-logic, logic-on-logic, and sensor-on-logic stacking—all of which benefit from superior interconnects—is poised for exponential growth, representing a multi-billion dollar opportunity.\n\n**Competitive Advantages**\nCompanies that successfully implement or license the technology described in this patent will gain substantial competitive advantages:\n\n1.  **Performance Leadership:** The ability to offer chips with superior signal integrity, lower latency, and higher clock speeds due to optimized inter-tier connections. This translates into market leadership in high-performance segments.\n2.  **Density and Form Factor:** Producing more functionality in a smaller physical footprint, which is critical for mobile devices, wearables, and compact edge AI solutions.\n3.  **Power Efficiency:** Reduced parasitic losses in interconnects contribute to lower overall power consumption, a key differentiator in battery-powered devices and energy-intensive data centers.\n4.  **Manufacturing Yields and Cost Reduction:** A more robust and predictable interconnect solution can lead to higher manufacturing yields for complex 3D stacks, ultimately reducing the per-chip cost and improving profitability.\n5.  **Design Flexibility:** The horizontal and perpendicular routing offers greater flexibility for chip architects to optimize layouts, potentially accelerating design cycles for new products.\n\n**Revenue Potential and Business Models**\nThe revenue potential for this technology is multi-faceted. Semiconductor foundries adopting this process can charge a premium for advanced 3D fabrication services. Integrated Device Manufacturers (IDMs) can leverage it to create proprietary, high-performance products that command higher prices and market share. IP licensing models could also be highly lucrative, allowing the patent holder to generate revenue from royalties as other companies integrate this interconnect methodology into their designs.\n\nPotential business models include:\n\n*   **Foundry Services:** Offering specialized 3D stacking processes incorporating this interconnect technique.\n*   **High-End Chip Sales:** Developing and selling advanced processors, GPUs, and custom ASICs (Application-Specific Integrated Circuits) that leverage the superior connectivity.\n*   **IP Licensing:** Licensing the patent to other foundries, IDMs, or fabless semiconductor companies.\n\n**Strategic Positioning and ROI Projections**\nStrategically, this patent enables companies to solidify their position at the forefront of semiconductor innovation. It allows for differentiation in a highly competitive market, particularly against rivals relying on older interconnect technologies. Investing in the development and integration of Connecting Techniques for Stacked Cmos Devices can yield significant returns on investment (ROI) through increased market share, higher product margins, and the ability to capture emerging market segments.\n\nFor example, a company developing AI inference chips could use this technology to create a device with significantly higher throughput and lower power consumption than competitors, leading to rapid market adoption and substantial revenue growth. The long-term ROI would be realized through sustained competitive advantage and the ability to innovate faster in an industry where speed to market is paramount.","faqs":[{"answer":"Connecting Techniques for Stacked Cmos Devices refers to a patented innovation (US-9853008) in semiconductor technology. It describes an advanced method for electrically connecting multiple layers, or 'tiers,' within a single integrated chip, particularly for CMOS (Complementary Metal-Oxide-Semiconductor) devices. This technology is crucial for the ongoing miniaturization and performance enhancement of electronic devices.\n\nAt its core, the invention introduces a unique inter-tier interconnecting structure that incorporates horizontal components directly within the semiconductor substrate. Unlike traditional vertical-only connections, this system allows for more flexible and efficient routing of electrical signals between stacked layers.\n\nThe goal of Connecting Techniques for Stacked Cmos Devices is to overcome the limitations of older interconnect methods, which often consumed too much space, introduced signal delays, or created thermal management challenges in 3D integrated circuits. This innovation paves the way for denser, faster, and more energy-efficient microchips for future electronics. This patent focuses on optimizing the electrical coupling between these stacked device tiers.","question":"What is Connecting Techniques for Stacked Cmos Devices?"},{"answer":"Connecting Techniques for Stacked Cmos Devices operates by utilizing a novel interconnect architecture embedded within the chip's structure. Instead of relying solely on vertical connections (like through-silicon vias), this patent describes a system where connections have both horizontal and perpendicular components.\n\nSpecifically, a first device tier (the bottom layer) contains a semiconductor substrate. Within this substrate, a primary segment of the inter-tier interconnecting structure extends in a horizontal direction. From the sidewall of this horizontal segment, a second segment protrudes outward in a direction substantially perpendicular to the first. This perpendicular segment is then configured to electrically couple with the second device tier (the layer stacked above).\n\nThis design allows for signals to be routed horizontally within a layer to an optimal point before making a short, direct vertical transition to the next layer. This innovative approach minimizes signal path lengths, reduces parasitic effects, and optimizes the use of silicon real estate, leading to more efficient and higher-performing inter-tier communication in stacked CMOS devices.","question":"How does Connecting Techniques for Stacked Cmos Devices work?"},{"answer":"Connecting Techniques for Stacked Cmos Devices addresses the critical interconnect bottleneck in three-dimensional (3D) integrated circuits. As chip designers push for higher density and performance by stacking multiple device layers, traditional methods for connecting these layers have become a significant challenge.\n\nPrior art, such as Through-Silicon Vias (TSVs), often consumes valuable silicon area, limiting the number of transistors or memory cells that can be packed into a chip. These vertical connections can also introduce signal integrity issues (like delays and crosstalk) and exacerbate thermal management problems due to localized heat generation. These factors collectively hinder the full potential of 3D integration.\n\nThis patent solves these issues by providing a more space-efficient, lower-latency, and thermally optimized interconnect solution. By embedding horizontal components and enabling perpendicular branching, Connecting Techniques for Stacked Cmos Devices allows for denser, faster, and more reliable electrical coupling between stacked CMOS device tiers, paving the way for next-generation, high-performance electronics.","question":"What problem does Connecting Techniques for Stacked Cmos Devices solve?"},{"answer":"The patent US-9853008, titled \"Connecting Techniques for Stacked Cmos Devices,\" lists no specific inventors or assignee in the provided data. Typically, patent applications will include the names of the individuals who conceived the invention (the inventors) and the entity to whom the rights of the patent are assigned (the assignee), which is often a company or research institution.\n\nIn cases where this information is not immediately available in a summary, it would normally be found within the full patent document itself, under the 'Inventors' and 'Assignee' fields. These details are crucial for understanding the origin and ownership of the intellectual property.\n\nWithout explicit inventor or assignee information provided, it's not possible to credit specific individuals or organizations for the creation of Connecting Techniques for Stacked Cmos Devices from the given abstract. However, the innovation itself remains a significant technical achievement in semiconductor interconnects.","question":"Who invented Connecting Techniques for Stacked Cmos Devices?"},{"answer":"Connecting Techniques for Stacked Cmos Devices offers several significant benefits that are critical for the advancement of modern electronics:\n\nFirstly, it enables **higher density and miniaturization**. By optimizing the interconnect footprint with embedded horizontal and perpendicular pathways, more valuable silicon area is freed up for active circuitry. This allows for packing more transistors and memory into a smaller physical space, leading to more powerful and compact devices.\n\nSecondly, it provides **superior performance and lower latency**. Shorter and more direct electrical paths between stacked layers reduce parasitic resistance and capacitance, leading to faster signal propagation and improved signal integrity. This is crucial for high-speed computing, AI accelerators, and real-time processing.\n\nThirdly, the technology contributes to **enhanced power efficiency**. Reduced parasitic losses mean less energy is wasted during inter-tier communication, translating to longer battery life for mobile devices and lower energy consumption for data centers. Lastly, it offers **improved thermal management** by distributing interconnects horizontally, helping to spread heat more evenly and mitigate localized hot spots in densely packed 3D chips.","question":"What are the key benefits of Connecting Techniques for Stacked Cmos Devices?"},{"answer":"Connecting Techniques for Stacked Cmos Devices fundamentally differs from prior art, primarily Through-Silicon Vias (TSVs), in its approach to inter-tier connectivity. Traditional TSVs are essentially vertical conductive pillars that bore through the entire thickness of a silicon substrate to connect layers. While they enabled 3D stacking, they came with limitations such as high area consumption, significant parasitic effects, and thermal challenges.\n\nThis patent, in contrast, introduces an interconnect structure with **embedded horizontal components** within the semiconductor substrate itself. Instead of just a direct vertical path, it allows for signals to travel horizontally within a layer. Crucially, it features **perpendicular segments** that protrude from these horizontal pathways to make precise, localized connections to the adjacent tier. This hybrid approach significantly optimizes space, reduces signal path lengths, and improves signal integrity and thermal characteristics compared to purely vertical, bulky TSV-based solutions.\n\nTherefore, Connecting Techniques for Stacked Cmos Devices provides a more flexible, efficient, and scalable solution for connecting stacked CMOS devices, overcoming many of the inherent drawbacks of previous 3D integration techniques.","question":"How is Connecting Techniques for Stacked Cmos Devices different from prior art?"},{"answer":"Connecting Techniques for Stacked Cmos Devices is poised to have a transformative impact across a wide array of industries that rely on advanced semiconductor technology. Its ability to enable denser, faster, and more power-efficient integrated circuits will be a key driver for innovation.\n\n**High-Performance Computing (HPC) and Artificial Intelligence (AI)** will see significant benefits, as the technology allows for tighter integration of logic and memory, crucial for speeding up complex computations and AI model training/inference. **Mobile and Consumer Electronics**, including smartphones, wearables, and augmented/virtual reality devices, will leverage this innovation for smaller form factors, increased functionality, and extended battery life.\n\n**Data Centers and Cloud Computing** will benefit from more energy-efficient and powerful server processors, reducing operational costs and environmental footprint. Furthermore, **Automotive Electronics**, particularly for autonomous vehicles requiring real-time, high-speed processing and sensor fusion, will find this technology invaluable. Essentially, any sector pushing the boundaries of miniaturization, speed, and power efficiency in electronics will be significantly impacted by Connecting Techniques for Stacked Cmos Devices.","question":"What industries will Connecting Techniques for Stacked Cmos Devices impact?"},{"answer":"The patent \"Connecting Techniques for Stacked Cmos Devices\" (US-9853008) has a recorded filing date and publication date.\n\nIts **Filing Date** was **2016-07-26**. This is the date when the patent application was officially submitted to the patent office, initiating the examination process.\n\nThe **Publication Date** was **2017-12-26**. This is the date when the patent document was formally published, making its details publicly accessible. While the term 'granted' refers to the date the patent rights were officially issued, the provided data specifically gives the publication date. The publication date typically occurs after the filing date and signifies the public disclosure of the invention's details, allowing others to review the technological advancements described in Connecting Techniques for Stacked Cmos Devices.","question":"When was Connecting Techniques for Stacked Cmos Devices filed/granted?"},{"answer":"The commercial applications of Connecting Techniques for Stacked Cmos Devices are extensive, spanning high-growth sectors that demand cutting-edge chip performance and efficiency. This technology is a foundational enabler for next-generation electronic products.\n\nIn **High-Performance Computing (HPC)**, it will facilitate the development of more powerful CPUs and GPUs, crucial for scientific research, simulations, and complex data processing. For **Artificial Intelligence (AI)**, it will lead to highly efficient AI accelerators and neural processing units (NPUs) that can handle massive datasets with lower latency, impacting everything from machine learning in the cloud to edge AI in smart devices. **Consumer electronics**, such as smartphones, tablets, and wearables, will benefit from more compact designs, enhanced processing power, and extended battery life.\n\nFurthermore, **data centers** will see improved server performance and reduced energy consumption, while the **automotive industry** can leverage this for advanced driver-assistance systems (ADAS) and autonomous driving platforms requiring robust, real-time processing. The commercial success of Connecting Techniques for Stacked Cmos Devices lies in its ability to unlock new levels of integration and performance across these diverse and critical markets, driving the next wave of technological innovation.","question":"What are the commercial applications of Connecting Techniques for Stacked Cmos Devices?"},{"answer":"Future developments related to Connecting Techniques for Stacked Cmos Devices are expected to focus on further scaling, integration with other advanced packaging technologies, and broader adoption across the semiconductor industry.\n\nOne key area will be **further miniaturization and density increases**. As fabrication processes evolve, the embedded horizontal and perpendicular interconnects could become even smaller and denser, allowing for even more layers and higher bandwidths in stacked CMOS devices. This will push the boundaries of what's possible in terms of transistor count and functionality within a given chip area. Another development will be **integration with heterogeneous systems**, where different types of components (e.g., logic, memory, analog, sensors, photonics) from various manufacturing processes are combined into a single 3D stack, leveraging the flexible interconnects of this patent. This will enable highly specialized, multi-functional chips.\n\nWe can also anticipate **advancements in materials science** for these interconnects, exploring novel conductive and dielectric materials to further improve signal integrity, reduce power consumption, and enhance thermal dissipation. Finally, the development of **more sophisticated Electronic Design Automation (EDA) tools** will be crucial to fully leverage the architectural flexibility offered by Connecting Techniques for Stacked Cmos Devices, enabling designers to optimize complex 3D layouts more effectively and accelerate time-to-market for future products.","question":"What are the future developments expected for Connecting Techniques for Stacked Cmos Devices?"}],"topics":["Connecting Techniques for Stacked Cmos Devices","CMOS stacking","3D integration","interconnect technology","semiconductor patent","semiconductor","industry","progression"],"tech_cluster":null},"seo":{"title":"Connecting Techniques for Stacked Cmos Devices - Patent US-9853008","description":"Discover the groundbreaking Connecting Techniques for Stacked Cmos Devices patent. This innovation revolutionizes 3D chip interconnects, boosting performance and density for next-gen electronics.","keywords":["Connecting Techniques for Stacked Cmos Devices","CMOS stacking","3D integration","interconnect technology","semiconductor patent","chip design","high-performance computing","stacked devices","US-9853008","microchip innovation","integrated circuits","advanced packaging"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853008","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853008","citation_suggestion":"Patentable. \"Connecting techniques for stacked CMOS devices\" (US-9853008). https://patentable.app/patents/US-9853008","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853008","json":"https://patentable.app/api/llm-context/US-9853008","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:58:14.595Z"}