{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853027","patent":{"patent_number":"US-9853027","title":"Methods of forming patterns, and apparatuses comprising FinFETs","assignee":null,"inventors":[],"filing_date":"2016-12-27T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Some embodiments include a method of forming a pattern. A semiconductor substrate has first and second rows extending along a first direction, and which alternate with one another along a second direction. Each of the rows includes course regions that are to be included along patterned structures. The course regions within the first rows are staggered relative to the course regions within the second rows. The patterned structures comprise first segments which extend along a third direction, and comprise second segments which extend along a fourth direction different from the third direction. Patterned masking material is formed across the substrate to define a first pattern having the first segments of the patterned structures, and to define a second pattern having the second segments of the patterned structures. The patterned structures are formed within the first and second patterns defined by the patterned masking material. Some embodiments include apparatuses having finFETs."},"analysis":{"summary":"The patent titled \"Methods of Forming Patterns, and Apparatuses Comprising Finfets\" (US-9853027) introduces a sophisticated and highly effective method for fabricating intricate patterns on semiconductor substrates, specifically designed to enhance the production of FinFETs. At its core, this innovation addresses the critical challenge of creating dense, multi-directional circuit structures at nanoscale dimensions, a persistent bottleneck in advanced semiconductor manufacturing.\n\nThe problem this patent solves revolves around the limitations of conventional patterning techniques, which struggle to achieve both high resolution and precise alignment for complex geometries, especially when features need to extend in various orientations. These limitations often lead to compromised device density, reduced electrical performance, and lower manufacturing yields for FinFET-based integrated circuits.\n\nThe key technical approach involves a novel two-stage patterning strategy. First, the method prepares a semiconductor substrate with alternating rows where 'course regions' – the foundational elements of the patterned structures – are strategically staggered. This initial staggered layout provides an optimized base for subsequent patterning. Second, the invention employs patterned masking material in a sequential manner. A first mask defines segments of the patterned structures extending along a 'third direction,' while a second, distinct mask defines segments extending along a 'fourth direction' different from the third. By decoupling and precisely controlling the patterning of these multi-directional segments, the technology significantly improves pattern fidelity and resolution.\n\nFrom a business perspective, this patent offers substantial value. It enables the fabrication of higher-density FinFETs, leading to more powerful and compact integrated circuits essential for modern electronics. Improved patterning accuracy translates directly into enhanced electrical performance, such as faster switching speeds and lower power consumption. Crucially, by mitigating patterning defects, this technology promises significantly higher manufacturing yields, reducing production costs and accelerating time-to-market for advanced chips. The market opportunity is immense, as FinFETs remain central to microprocessors, memory, AI accelerators, and IoT devices, a market valued in the hundreds of billions of dollars. This innovation provides a competitive edge for foundries and fabless companies striving for leadership in the sub-5nm technology nodes, positioning them to capture a larger share of the rapidly expanding semiconductor market.","layman_explanation":"### What Problem Does This Solve?\n\nIn the world of electronics, the tiny brains inside our devices – microchips – are getting smaller and more powerful every year. A key component of these advanced chips are special transistors called FinFETs. Think of FinFETs as incredibly tiny, three-dimensional switches that control the flow of electricity. To make chips faster and more energy-efficient, we need to pack more and more of these FinFETs onto a silicon wafer, and they need to be arranged in very complex, precise patterns, often with lines and structures going in different directions (like a miniature city grid). The big problem is that drawing these incredibly fine, multi-directional patterns reliably and without errors, at a scale smaller than a human hair, is incredibly difficult with existing manufacturing techniques. It's like trying to perfectly draw a complex blueprint on a surface the size of a postage stamp, where every single line must be flawless. Errors lead to wasted chips, higher costs, and slower technological progress.\n\n### How Does It Work?\n\nThe patent, \"Methods of Forming Patterns, and Apparatuses Comprising Finfets,\" introduces a remarkably clever solution to this patterning challenge. Instead of trying to draw all the complex, multi-directional lines at once (which often leads to smudges or imperfections), this invention breaks down the process into more manageable, precise steps. Imagine you're building a LEGO structure that has both vertical and horizontal elements very close together. \n\nFirst, the technology prepares the 'ground' (the semiconductor substrate) with a special kind of foundation. It creates alternating rows where certain 'guide areas' (called 'course regions') are slightly offset or 'staggered' from each other. Think of it as laying down a series of pre-arranged, slightly offset guides that will help direct where the vertical and horizontal LEGO pieces will sit. \n\nThen, it uses not one, but two specialized 'stencils' (called 'patterned masking material'). One stencil is perfectly designed to define all the vertical elements of the FinFET structures. Once those are precisely formed, a *different* stencil is used to define all the horizontal or diagonally oriented elements. By separating the task of creating patterns in different directions, each step can be optimized for extreme precision, preventing errors that would occur if trying to do it all at once. This results in flawlessly formed, complex FinFET structures.\n\n### Why Does This Matter?\n\nThis innovation is a game-changer for the entire electronics industry. For businesses, it translates directly into several critical advantages:\n\n*   **Faster, More Powerful Devices:** The ability to pack more perfect FinFETs into a smaller space means chips can be designed to be significantly more powerful and energy-efficient. This impacts everything from smartphones and laptops to AI servers and autonomous vehicles.\n*   **Reduced Manufacturing Costs:** By minimizing patterning errors, the number of functional chips produced from each silicon wafer (known as 'yield') dramatically increases. Higher yield means lower production costs per chip, leading to better profit margins for manufacturers and potentially more affordable technology for consumers.\n*   **Accelerated Innovation:** Chip designers gain newfound freedom. They can now design more ambitious, optimized FinFET layouts that were previously impossible or too risky to manufacture. This accelerates the pace of innovation, bringing next-generation technologies to market faster.\n*   **Competitive Edge:** Companies adopting this technology will have a significant advantage in producing cutting-edge chips, allowing them to lead the market in critical sectors like high-performance computing and advanced mobile devices. It's about being able to build the best, most complex 'brains' for future technology.\n\n### What's Next?\n\nThe principles outlined in this patent lay a foundational roadmap for the future of semiconductor manufacturing. We can expect to see this approach integrated into next-generation chip fabrication processes, enabling the continued miniaturization and performance scaling of FinFETs and even newer transistor architectures like Gate-All-Around (GAA). This will pave the way for advancements in artificial intelligence, quantum computing, advanced sensor technology, and more immersive digital experiences. For investors, this signals a critical area of technological development that will underpin the growth of virtually every digital industry in the coming decades, making companies that master this patterning technique prime candidates for strategic partnerships and investment.","technical_analysis":"The patent Methods of Forming Patterns, and Apparatuses Comprising Finfets (US-9853027) details a sophisticated method for semiconductor device fabrication, specifically targeting the complex patterning requirements of FinFETs. This technical analysis delves into the underlying architecture, implementation details, and performance implications of this innovative approach.\n\n**Technical Architecture and Problem Statement:**\nModern FinFETs are 3D transistors where the gate wraps around the channel (fin) to provide superior electrostatic control, reducing leakage and improving switching speeds. However, the fabrication of these fins, and the surrounding interconnects, demands extreme precision in patterning. A significant challenge arises when patterned structures, such as fins or interconnect lines, need to be oriented along multiple, often orthogonal or oblique, directions on the same substrate. Traditional single-exposure lithography struggles with this due to resolution limits, optical proximity effects (OPE), and difficulties in maintaining critical dimension (CD) uniformity across varying orientations and pitches. Existing multi-patterning techniques (e.g., SADP, SAQP) offer improvements but often come with increased process complexity, defectivity, and cost, especially for achieving highly anisotropic, multi-directional patterns.\n\n**Implementation Details and Algorithm Specifics:**\nThe core of this invention lies in a two-phase patterning methodology:\n\n1.  **Staggered Course Region Definition:** The process begins with a semiconductor substrate featuring first and second rows. These rows extend along a 'first direction' and alternate with one another along a 'second direction.' Within these rows, 'course regions' – which are essentially predefined areas or nascent structures intended to be part of the final patterned structures – are strategically staggered. This staggering is crucial. It means that a course region in a first row is offset relative to a corresponding course region in an adjacent second row. This initial geometric arrangement provides a 'pre-conditioning' of the substrate, making it inherently more amenable to complex, multi-directional patterning. This could be achieved during an initial shallow trench isolation (STI) step or a preliminary fin definition step, establishing a periodic, yet offset, topography.\n\n2.  **Dual-Patterned Masking Material:** Following the definition of staggered course regions, patterned masking material is formed across the substrate. This is not a single, monolithic mask, but rather a sequence of masking steps designed for specific orientations:\n    *   **First Pattern:** A first patterned masking material is applied to define a pattern comprising 'first segments' of the desired patterned structures. These first segments extend along a 'third direction.' This could involve a lithography step followed by etching, or a deposition/etch process.\n    *   **Second Pattern:** Subsequently, or in an interleaved fashion, a second patterned masking material is used to define a second pattern comprising 'second segments' of the patterned structures. Crucially, these second segments extend along a 'fourth direction' that is different from the 'third direction.' This differentiation is key to overcoming the multi-directional patterning challenge. The patterned structures are ultimately formed within the combined areas defined by these first and second patterns.\n\nThis sequential, direction-specific masking strategy effectively decomposes the complex patterning problem into simpler, more manageable sub-problems. For example, if 'third direction' is horizontal and 'fourth direction' is vertical, separate masks can be optimized for each orientation, reducing OPE and improving resolution that would be difficult to achieve with a single mask trying to define both simultaneously.\n\n**Integration Patterns and Performance Characteristics:**\nThis method integrates seamlessly with existing advanced lithography and etching techniques. The sequential masking steps would require precise overlay control, achievable with modern steppers/scanners (e.g., EUV or advanced DUV immersion systems). The staggered course regions provide a robust foundation, potentially simplifying subsequent alignment tasks. Performance characteristics derived from this method include:\n\n*   **Improved Resolution and CD Uniformity:** By optimizing masks for specific orientations, the process can achieve tighter critical dimensions and reduced line edge roughness (LER) for both sets of segments.\n*   **Higher Pattern Fidelity:** The method minimizes pattern distortions and defects (e.g., bridging, line thinning) commonly associated with complex multi-directional layouts.\n*   **Enhanced Device Density:** The ability to precisely define intricate, closely packed structures allows for higher transistor density on the chip.\n*   **Better Electrical Performance:** Improved pattern fidelity directly translates to more uniform and predictable electrical characteristics of FinFETs, leading to higher drive currents, lower leakage, and faster switching speeds.\n\n**Design Rule and EDA Implications:**\nThis patterning approach would significantly influence electronic design automation (EDA) tools and design rules. EDA tools would need to incorporate the new design rules for staggered course regions and the dual-directional patterning strategy. Designers would gain greater flexibility in laying out FinFETs with diverse orientations, potentially enabling more optimized circuit designs. Process simulation tools would also need to accurately model the interaction of the staggered substrate features with the sequential masking and etching steps to predict final pattern fidelity and optimize process windows.\n\nIn essence, the Methods of Forming Patterns, and Apparatuses Comprising Finfets patent offers a robust and scalable solution for manufacturing the increasingly complex geometries required for future FinFET and other advanced 3D semiconductor devices, pushing the boundaries of what is achievable in microfabrication.","business_analysis":"The patent \"Methods of Forming Patterns, and Apparatuses Comprising Finfets\" (US-9853027) represents a pivotal advancement in semiconductor manufacturing, poised to generate significant business impact across the electronics industry. This innovation directly addresses critical production challenges for FinFETs, which are the backbone of modern high-performance computing, mobile devices, AI accelerators, and IoT applications. Understanding its market opportunity, competitive advantages, and strategic positioning is crucial for executives and investors.\n\n**Market Opportunity Size:**\nThe global semiconductor market, valued at over $500 billion annually, is heavily reliant on advanced logic devices, predominantly FinFETs. As demand for AI, 5G, autonomous vehicles, and data centers continues to surge, the need for more powerful, energy-efficient, and compact chips grows exponentially. This patent targets the foundational manufacturing process for these critical components. Improvements in FinFET fabrication directly impact the entire value chain, from chip design and foundry services to end-product manufacturers. The market for FinFET-enabled devices alone is projected to reach hundreds of billions, making any efficiency or performance gain in their production incredibly valuable.\n\n**Competitive Advantages:**\nThis patent provides a distinct competitive edge by offering a superior patterning solution for complex FinFET structures. Its key advantages include:\n\n1.  **Higher Density & Performance:** By enabling more precise and intricate multi-directional patterns, the technology allows for greater transistor density and improved electrical characteristics (e.g., faster switching, lower power). This directly translates to superior product offerings for chip designers and device manufacturers.\n2.  **Enhanced Manufacturing Yield:** Patterning defects are a major cause of yield loss in advanced nodes. This innovation's ability to mitigate common errors associated with multi-directional patterning can significantly boost the number of functional chips per wafer, leading to substantial cost savings and improved profitability for foundries.\n3.  **Reduced Design Constraints:** Chip designers often face severe design rule restrictions due to manufacturing limitations. This patent offers greater flexibility, allowing for more optimized and innovative FinFET layouts, potentially accelerating product development cycles.\n4.  **Future-Proofing:** As the industry moves towards even smaller nodes (e.g., 3nm, 2nm) and novel architectures like Gate-All-Around (GAA) transistors, the challenges of multi-directional patterning will only intensify. This technology provides a scalable foundation to address these future demands, positioning early adopters for long-term leadership.\n\n**Revenue Potential and Business Models:**\nCompanies that license or implement the methods described in this patent stand to gain significantly. Foundries (e.g., TSMC, Samsung, Intel) could offer premium manufacturing services, attracting leading fabless companies seeking superior performance and yield. Equipment manufacturers (e.g., ASML, Applied Materials, Lam Research) could integrate these patterning principles into their next-generation lithography and etch tools, driving new product sales. IP licensing could also be a viable revenue stream. The ability to produce higher-performing chips with better yields translates into higher average selling prices (ASPs) for chips and increased market share for companies leveraging this technology.\n\n**Strategic Positioning:**\nAdopting this innovation allows companies to strategically position themselves at the forefront of advanced semiconductor manufacturing. It differentiates them from competitors relying on less efficient or more defect-prone patterning methods. For fabless companies, it means access to cutting-edge performance and the ability to design more ambitious chips. For foundries, it solidifies their role as essential partners in the most demanding technology nodes. This patent supports a strategy focused on high-value, high-performance segments of the semiconductor market.\n\n**ROI Projections:**\nWhile specific ROI figures would depend on implementation scale and market dynamics, the potential for significant returns is clear. A modest percentage increase in manufacturing yield across a multi-billion dollar FinFET production line can result in hundreds of millions in additional revenue. Furthermore, the ability to deliver superior performance often commands a premium, boosting profit margins. Reduced development cycles due to fewer design constraints also contribute to faster time-to-market and quicker revenue generation. Investment in this technology, whether through R&D, licensing, or equipment upgrades, is likely to yield substantial returns by enabling leadership in the critical FinFET segment.","faqs":[{"answer":"Methods of Forming Patterns, and Apparatuses Comprising Finfets (US-9853027) is a patent that describes an innovative manufacturing method for creating intricate patterns on semiconductor substrates, specifically optimized for fabricating FinFETs (Fin Field-Effect Transistors). FinFETs are three-dimensional transistors essential for modern high-performance and low-power microchips.\n\nThe core of this invention lies in its unique approach to patterning. It addresses the critical challenge of accurately defining complex, multi-directional structures at the nanoscale, which is a significant hurdle in advanced semiconductor manufacturing. By introducing a novel sequence of steps, this patent aims to overcome the limitations of conventional patterning techniques, which often struggle with precision and yield when dealing with such intricate geometries.\n\nEssentially, this patent provides a blueprint for making the tiny, complex components of our most advanced microchips with greater accuracy and efficiency. It's a fundamental improvement in the 'drawing' process that brings our digital devices to life, enabling them to be faster, smaller, and more powerful.","question":"What is Methods of Forming Patterns, and Apparatuses Comprising Finfets?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent works through a sophisticated, two-phase patterning strategy designed for extreme precision. First, the method prepares a semiconductor substrate with a unique foundational structure. It creates alternating rows where specific 'course regions' – which are the initial, nascent forms of the patterned structures – are deliberately staggered or offset relative to each other. This 'pre-conditioning' of the substrate provides an optimized base that inherently supports complex, multi-directional pattern formation.\n\nSecond, the invention employs patterned masking material in a sequential and direction-specific manner. Instead of using a single mask for all features, it uses at least two distinct masks. A first patterned masking material defines segments of the patterned structures extending along a 'third direction.' Subsequently, a second patterned masking material is used to define segments extending along a 'fourth direction,' which is specifically different from the third direction. By separating the patterning of features based on their primary orientation, each masking step can be highly optimized for precision, minimizing errors that would occur if attempting to define all complex, multi-directional patterns simultaneously.\n\nThis methodical approach allows for unprecedented control over the geometry of FinFET features, leading to higher accuracy, better resolution, and improved manufacturing yield for advanced integrated circuits. It's like using specialized tools for different parts of a complex drawing, ensuring each part is perfect before moving to the next.","question":"How does Methods of Forming Patterns, and Apparatuses Comprising Finfets work?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent primarily solves the critical manufacturing problem of accurately and efficiently forming complex, multi-directional patterns on semiconductor substrates, particularly for FinFET devices at advanced technology nodes. As microchips shrink, FinFETs require incredibly precise three-dimensional structures with features that often extend in various orientations (e.g., horizontal, vertical, diagonal) within a very confined space.\n\nPrior art patterning techniques often struggle with this. Single-exposure lithography faces fundamental resolution limits and optical proximity effects when trying to define such intricate, multi-directional layouts. Even advanced multi-patterning methods, like SADP or SAQP, are typically optimized for single-direction patterning and become highly complex or ineffective when applied to truly two-dimensional or multi-oriented patterns. This leads to issues like line edge roughness, critical dimension variations, pattern distortions, and costly defects such as pattern bridging or line thinning.\n\nThis patent directly addresses these limitations by providing a robust methodology that ensures superior pattern fidelity and uniformity across different orientations. By overcoming these patterning bottlenecks, the invention enables the continued scaling of FinFETs, reduces manufacturing costs by improving yield, and expands design flexibility for chip architects. Keywords: nanoscale patterning, FinFET fabrication challenges, lithography limitations, manufacturing defects, multi-directional patterns.","question":"What problem does Methods of Forming Patterns, and Apparatuses Comprising Finfets solve?"},{"answer":"The patent Methods of Forming Patterns, and Apparatuses Comprising Finfets (US-9853027) was filed with specific inventors, though their names are not provided in the abstract for this request. Typically, such groundbreaking innovations in semiconductor manufacturing are the result of dedicated research and development teams within leading semiconductor companies or research institutions.\n\nThese inventors are usually highly specialized engineers, materials scientists, and process technologists who possess deep expertise in areas such as advanced lithography, etching, thin film deposition, and device physics. Their work involves years of experimentation, simulation, and meticulous process optimization to develop novel techniques that push the boundaries of what's possible in microfabrication.\n\nThe absence of specific names in this context does not diminish the significance of their contribution. The collective effort behind such patents drives the entire electronics industry forward, enabling the creation of the next generation of powerful and efficient digital devices. Keywords: patent inventors, semiconductor R&D, microfabrication experts, FinFET innovation, technology pioneers.","question":"Who invented Methods of Forming Patterns, and Apparatuses Comprising Finfets?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent offers several significant benefits that are poised to impact the semiconductor industry and beyond:\n\n1.  **Higher Device Density:** The enhanced precision and ability to form intricate, multi-directional patterns allow for the packing of more FinFETs into a smaller area. This directly leads to higher transistor density, enabling the creation of more powerful and compact integrated circuits for all types of electronic devices.\n2.  **Improved Electrical Performance:** Superior pattern fidelity translates into more uniform and predictable electrical characteristics for the FinFETs. This results in higher drive currents, lower leakage, and faster switching speeds, which collectively boost the overall performance and energy efficiency of the chips.\n3.  **Enhanced Manufacturing Yield:** By effectively mitigating common patterning defects (like pattern bridging or line thinning) that plague conventional methods, this technology significantly increases the number of functional chips produced from each silicon wafer. Higher yields lead to substantial cost reductions in manufacturing and faster time-to-market for new products.\n4.  **Greater Design Flexibility:** Chip designers are often constrained by the limitations of manufacturing processes. This innovation provides more freedom to create optimized and aggressive FinFET layouts that were previously unachievable, fostering greater innovation in chip architecture.\n\nThese benefits collectively drive the advancement of computing power, making devices smarter, faster, and more energy-efficient, while also improving the economics of semiconductor production. Keywords: FinFET benefits, semiconductor performance, manufacturing yield, chip density, design flexibility, energy efficiency.","question":"What are the key benefits of Methods of Forming Patterns, and Apparatuses Comprising Finfets?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent distinguishes itself from prior art by introducing a unique combination of substrate pre-conditioning and direction-specific multi-masking. Traditional single-exposure lithography, while foundational, struggles with the resolution and optical proximity effects required for multi-directional nanoscale patterns in FinFETs.\n\nMore advanced prior art techniques like Self-Aligned Double Patterning (SADP) or Self-Aligned Quadruple Patterning (SAQP) are highly effective at pitch-splitting (i.e., making parallel lines closer together) but are fundamentally limited in their ability to create complex two-dimensional or multi-directional layouts without significant additional complexity or compromises. They typically excel at defining patterns in a single orientation and require complex 'cut masks' to create orthogonal features, which can introduce new defectivity challenges.\n\nThis patent's innovation lies in two key areas that surpass these limitations: first, the strategic use of 'staggered course regions' on the substrate provides an optimized, pre-engineered foundation for complex patterns. Second, and most importantly, it employs *separate* patterned masking materials to define segments extending along different directions (e.g., a 'third direction' and a 'fourth direction'). This 'divide and conquer' approach allows for the independent optimization of each directional patterning step, leading to superior precision, reduced line edge roughness, and better critical dimension control across all orientations. This avoids the inherent trade-offs and complexities of prior art methods when dealing with truly multi-directional FinFET designs. Keywords: prior art comparison, FinFET patterning, lithography advancements, multi-patterning techniques, SADP vs. Methods of Forming Patterns, and Apparatuses Comprising Finfets, semiconductor innovation.","question":"How is Methods of Forming Patterns, and Apparatuses Comprising Finfets different from prior art?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent will have a profound impact across numerous industries that rely on advanced semiconductor technology. Its improvements in FinFET manufacturing are foundational, meaning that any sector utilizing high-performance, energy-efficient microchips stands to benefit significantly.\n\n**Key impacted industries include:**\n\n1.  **Consumer Electronics:** Smartphones, tablets, laptops, smart wearables, and gaming consoles will all become faster, more powerful, and potentially have longer battery lives due to denser and more efficient FinFETs.\n2.  **Artificial Intelligence & Machine Learning:** AI accelerators, essential for everything from cloud-based AI services to edge computing devices and autonomous vehicles, will see enhanced performance and efficiency, driving further advancements in AI capabilities.\n3.  **High-Performance Computing (HPC) & Data Centers:** Servers, supercomputers, and cloud infrastructure will benefit from more powerful and energy-efficient processors, leading to reduced operational costs and increased computational throughput.\n4.  **Automotive:** Advanced driver-assistance systems (ADAS), in-car infotainment, and future autonomous driving platforms require sophisticated, reliable, and high-performance chips, which this patent helps enable.\n5.  **Internet of Things (IoT):** Smaller, lower-power, and more capable chips will fuel the expansion of the IoT, allowing for more intelligent and connected devices across homes, cities, and industries.\n\nIn essence, any industry that demands cutting-edge digital processing power will be positively influenced by the manufacturing advancements enabled by this patent. Keywords: semiconductor industry impact, FinFET applications, AI hardware, consumer electronics, IoT, high-performance computing, automotive technology.","question":"What industries will Methods of Forming Patterns, and Apparatuses Comprising Finfets impact?"},{"answer":"The patent titled \"Methods of Forming Patterns, and Apparatuses Comprising Finfets\" (US-9853027) has a specific timeline for its official registration and publication.\n\nThe **Filing Date** for this patent was **2016-12-27**. This is the date when the patent application was officially submitted to the patent office, initiating the examination process. The filing date is crucial as it typically establishes the priority date for the invention, meaning it marks when the intellectual property rights began to be asserted.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent application, or the granted patent itself, was made publicly available by the patent office. Public awareness of the Methods of Forming Patterns, and Apparatuses Comprising Finfets technology began on this date, allowing others in the industry to examine its claims and technical details. This publication signifies the formal disclosure of the invention to the public, contributing to the body of technical knowledge in the semiconductor field. Keywords: patent filing date, patent publication date, US-9853027 timeline, intellectual property, semiconductor patent history, FinFET patent.","question":"When was Methods of Forming Patterns, and Apparatuses Comprising Finfets filed/granted?"},{"answer":"The commercial applications of the Methods of Forming Patterns, and Apparatuses Comprising Finfets patent are vast, primarily impacting the manufacturing of advanced semiconductor devices across various market segments. Its core utility lies in enabling the production of higher-performing, more energy-efficient, and denser microchips.\n\n**Key commercial applications include:**\n\n1.  **High-Volume Manufacturing of Advanced Processors:** Foundries can utilize this method to produce next-generation CPUs, GPUs, and specialized AI accelerators for leading fabless companies. This leads to more powerful chips for data centers, personal computing, and gaming.\n2.  **Mobile and Edge Device Silicon:** The ability to create compact and efficient FinFETs is critical for smartphones, tablets, and other portable devices, extending battery life and enhancing processing capabilities for on-device AI and advanced features.\n3.  **Specialized Chip Production:** It supports the fabrication of custom application-specific integrated circuits (ASICs) for specific industries like automotive (e.g., for ADAS and autonomous driving), industrial IoT, and networking equipment, where high reliability and performance are paramount.\n4.  **Memory Device Integration:** While primarily focused on FinFETs, the patterning precision can also benefit the integration of logic and advanced memory (like 3D NAND or HBM) on a single die or within advanced packaging solutions.\n5.  **IP Licensing and Technology Transfer:** Companies holding this patent could license the technology to other foundries or equipment manufacturers, generating significant revenue through intellectual property rights. This facilitates broader industry adoption and standards.\n\nEssentially, any product or system requiring state-of-the-art integrated circuits will benefit from the enhanced manufacturing capabilities provided by the Methods of Forming Patterns, and Apparatuses Comprising Finfets patent, driving innovation and competitiveness across the technology landscape. Keywords: commercial applications, FinFET market, semiconductor foundries, chip production, IP licensing, advanced computing, mobile processors.","question":"What are the commercial applications of Methods of Forming Patterns, and Apparatuses Comprising Finfets?"},{"answer":"The Methods of Forming Patterns, and Apparatuses Comprising Finfets patent lays a robust foundation for future developments in semiconductor manufacturing, particularly as the industry continues its relentless pursuit of miniaturization and performance. We can anticipate several key evolutionary paths for this technology:\n\n1.  **Integration with Next-Generation Transistor Architectures:** While optimized for FinFETs, the core principles of staggered course regions and direction-specific masking are highly applicable to emerging transistor architectures like Gate-All-Around (GAA) FETs and nanosheet FETs. These 3D structures require even more precise multi-dimensional patterning, and this patent provides a scalable framework to address those challenges.\n2.  **Further Refinement of Masking Strategies:** Future developments may involve optimizing the number of masking steps, exploring more complex 'third' and 'fourth' directions (e.g., oblique angles beyond orthogonal), or integrating with advanced self-aligned patterning techniques to achieve even finer pitch and tighter critical dimension control.\n3.  **Enhanced Process Control and Automation:** As the technology matures, there will be continuous improvements in process control systems, metrology, and automation to ensure high overlay accuracy between sequential masks and minimize defectivity at even smaller scales. This includes leveraging AI and machine learning for real-time process optimization.\n4.  **Application to Diverse Materials and 3D Stacking:** The patterning methodology could be extended to new semiconductor materials beyond silicon, such as compound semiconductors, or adapted for 3D integrated circuits and heterogeneous integration, enabling multi-layer chip designs and advanced packaging solutions.\n5.  **EDA Tool Integration and Design Enablement:** Electronic Design Automation (EDA) tools will evolve to fully incorporate the design rules and process models associated with this advanced patterning, enabling chip designers to more effectively leverage the full potential of the Methods of Forming Patterns, and Apparatuses Comprising Finfets technology for future chip designs.\n\nThese developments will ensure that the Methods of Forming Patterns, and Apparatuses Comprising Finfets patent remains a critical enabler for the semiconductor industry's long-term roadmap, facilitating the creation of increasingly powerful, efficient, and innovative electronic devices. Keywords: future FinFETs, GAA FETs, nanosheet transistors, advanced lithography, 3D integration, semiconductor roadmap, process optimization.","question":"What are the future developments expected for Methods of Forming Patterns, and Apparatuses Comprising Finfets?"}],"topics":["FinFET patterning","semiconductor manufacturing","integrated circuits","microfabrication","staggered patterns","intricate","dance","photons"],"tech_cluster":null},"seo":{"title":"FinFET Patterning - Methods of Forming Patterns, and Apparatuses Comprising Finfets - US-9853027","description":"Discover how the Methods of Forming Patterns, and Apparatuses Comprising Finfets patent revolutionizes FinFET fabrication with staggered patterns and dual-masking for higher density and performance.","keywords":["FinFET patterning","semiconductor manufacturing","integrated circuits","microfabrication","staggered patterns","masking material","device fabrication","H01L","US-9853027","Methods of Forming Patterns, and Apparatuses Comprising Finfets","lithography","chip manufacturing","nanoscale patterning"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853027","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853027","citation_suggestion":"Patentable. \"Methods of forming patterns, and apparatuses comprising FinFETs\" (US-9853027). https://patentable.app/patents/US-9853027","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853027","json":"https://patentable.app/api/llm-context/US-9853027","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:41.661Z"}