{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853029","patent":{"patent_number":"US-9853029","title":"Integrated circuit device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-03-02T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"An integrated circuit (IC) device includes a first-fin-type active region, a second-fin-type active region, and an inter-region stepped portion. The first-fin-type active region protrudes from a substrate in a first region of the substrate and has a first width in a first direction. The second-fin-type active region protrudes from the substrate in a second region of the substrate and has a second width in the first direction. The second width is less than the first width. The inter-region stepped portion is formed at an interface between the first region and the second region on a bottom surface, which is a portion of the substrate between the first-fin-type active region and the second-fin-type active region."},"analysis":{"summary":"The patent \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) introduces a pivotal advancement in integrated circuit (IC) fabrication, particularly for FinFET architectures. At its core, this innovation describes an IC device featuring two distinct types of fin-shaped active regions—one with a broader width and another with a narrower width—both protruding from a common substrate. This differential in fin width is critical for optimizing transistors for diverse performance and power characteristics on a single chip.\n\nTraditionally, integrating such varied fin dimensions on a single substrate has presented significant manufacturing challenges, often leading to structural stress, electrical variability, and reduced yield. This patent elegantly solves this problem by incorporating a unique 'inter-region stepped portion.' This stepped structure is precisely formed at the interface between the wider and narrower fin regions, specifically on the bottom surface of the substrate (e.g., within the shallow trench isolation layer).\n\nThe problem this technology solves is the inefficient and often problematic transition between different performance zones within an IC. By providing a controlled, stepped interface, the invention mitigates mechanical stress, improves lithographic and etching uniformity, and ensures more consistent electrical properties. This translates into more reliable and higher-performing chips.\n\nKey technical approaches include the precise patterning and formation of these fin-type active regions and the critical stepped portion, likely leveraging advanced photolithography and selective etching techniques. The business value and applications are immense, enabling chip manufacturers to produce System-on-a-Chip (SoC) designs with unprecedented levels of heterogeneous integration, where high-performance logic and ultra-low-power components can coexist optimally.\n\nThe market opportunity for this technology is substantial, impacting sectors from high-performance computing and artificial intelligence to mobile devices and IoT. As the semiconductor industry continues its push towards smaller process nodes (e.g., 3nm, 2nm), the ability to precisely manage fin dimensions and their interfaces, as described in this patent, will become an indispensable competitive advantage, driving efficiency, yield, and innovation across the entire silicon ecosystem.","layman_explanation":"### What Problem Does This Solve?\nImagine you're designing a high-tech building complex – a 'smart city' on a microchip. This city needs different types of buildings: towering skyscrapers for intense work (like a computer's main processor, demanding high performance) and smaller, energy-efficient homes for quieter tasks (like a chip's power-saving components). The challenge is connecting these very different structures seamlessly and efficiently. In the world of microchips, these 'buildings' are called FinFETs, tiny transistor structures that come in different 'widths' to achieve either high speed or low power consumption. Historically, trying to smoothly transition between a wide, high-performance FinFET and a narrow, low-power FinFET on the same chip has been tricky. It often leads to structural weaknesses, electrical inconsistencies, and makes the manufacturing process more complex and costly. Essentially, it's hard to build a smooth road from a six-lane highway to a quiet residential street without creating a bottleneck or a bumpy ride.\n\n### How Does It Work?\nThis patent, \"Integrated Circuit Device and Method of Manufacturing the Same\", offers an elegant solution to this architectural problem. Instead of forcing an abrupt, problematic connection between different FinFET widths, the invention introduces a clever 'inter-region stepped portion.' Think of this stepped portion like a precisely engineered set of stairs or a ramp that connects two different ground levels. On our microchip, it's a specially formed transition area on the substrate's surface, acting as a bridge between the wider, high-performance fin-type active region and the narrower, low-power fin-type active region. This step ensures that the change in fin width is gradual and structurally sound. It's not about changing the fins themselves, but intelligently designing the ground they stand on, allowing for a much cleaner and more stable interface. This conceptual approach avoids stress points, reduces manufacturing errors, and ensures that electrical signals flow consistently across these diverse regions of the chip.\n\n### Why Does This Matter?\nThis innovation matters immensely for the future of electronics. By enabling the seamless integration of diverse FinFET types, this technology allows chip designers to create System-on-a-Chip (SoC) solutions that are simultaneously faster, more power-efficient, and more reliable than ever before. For businesses, this translates into several key advantages: higher-performing products (e.g., faster smartphones, more powerful AI servers), longer battery life for mobile devices, and reduced manufacturing costs due to improved production yield. It provides a significant competitive edge in the fiercely contested semiconductor market, allowing companies to push the boundaries of what's possible in areas like artificial intelligence, high-performance computing, and advanced mobile technology. It essentially removes a critical bottleneck in chip design, unlocking new levels of innovation and efficiency.\n\n### What's Next?\nWith the \"Integrated Circuit Device and Method of Manufacturing the Same\" patent, the industry can expect to see more sophisticated and optimized chip designs emerge. This foundational technology will likely be integrated into the next generation of manufacturing processes at leading foundries. Future applications could extend to highly specialized custom chips for niche markets, where precise control over power and performance is paramount. For investors, this signals a pathway to more robust and profitable semiconductor investments, as the underlying technology ensures better product quality and manufacturing efficiency. We could see market adoption accelerate as chip designers leverage this newfound flexibility to create truly groundbreaking devices within the next 3-5 years, solidifying its role as a critical enabler for the future of computing.","technical_analysis":"The patent \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) details a sophisticated structural and methodological innovation for advanced integrated circuit (IC) fabrication, specifically targeting FinFET (Fin Field-Effect Transistor) architectures. This technology addresses the critical challenge of integrating diverse transistor performance requirements onto a single silicon substrate by enabling the co-existence of active regions with varying fin widths, while maintaining structural integrity and electrical uniformity.\n\n**Technical Architecture and Device Structure:**\nAt the heart of this invention is an IC device comprising a substrate from which two types of fin-shaped active regions protrude. A 'first-fin-type active region' is characterized by a specific width (W1) in a direction perpendicular to the fin's length. Adjacent to this, a 'second-fin-type active region' is present, possessing a narrower width (W2 < W1). These differential widths are fundamental for optimizing transistor characteristics; wider fins typically offer higher current drive (Idlin) for high-performance applications, while narrower fins minimize leakage current for low-power operations.\n\nThe critical architectural innovation is the 'inter-region stepped portion.' This stepped portion is formed at the interface between the first and second active regions, crucially located on the 'bottom surface' of the substrate. This bottom surface refers to the portion of the substrate situated between the fins, typically defined by the shallow trench isolation (STI) dielectric material. The stepped geometry provides a gradual transition in the topographical profile from the wider fin region to the narrower fin region, rather than an abrupt change.\n\n**Implementation Details and Algorithm Specifics:**\nWhile the patent abstract doesn't detail specific algorithms, the method of manufacturing the same would involve precise photolithography and anisotropic etching techniques. The formation of the inter-region stepped portion likely requires a multi-step etching process or selective material removal. For instance, after defining the initial fin patterns, a selective etch could be applied to the STI region at the interface. This etch would remove a controlled amount of silicon or dielectric material, creating the desired step profile before subsequent gate stack formation and doping steps.\n\nKey implementation considerations include:\n1.  **Lithographic Alignment:** Extremely precise alignment between patterning layers to define the differential fin widths and the exact location and profile of the stepped portion.\n2.  **Etch Selectivity and Anisotropy:** Utilizing etch chemistries that are highly selective to silicon versus dielectric, and anisotropic enough to create vertical fin sidewalls and controlled step profiles without damaging adjacent structures.\n3.  **Stress Management:** The stepped portion is inherently designed to manage mechanical stress. The gradual transition helps distribute stress more evenly compared to abrupt changes, which can lead to crystal defects, impacting carrier mobility and device reliability.\n\n**Integration Patterns and Performance Characteristics:**\nThis technology enables advanced heterogeneous integration patterns. Designers can place high-performance (wider fin) transistors alongside low-power (narrower fin) transistors on the same die with greater confidence in the interface integrity. This is crucial for System-on-a-Chip (SoC) designs that combine CPUs, GPUs, AI accelerators, and memory controllers, each with distinct power-performance requirements.\n\nFrom a performance standpoint, the controlled stepped interface leads to:\n*   **Reduced Variability:** More uniform fin profiles and interface characteristics minimize variations in threshold voltage (Vt), drive current, and subthreshold slope across the chip.\n*   **Improved Short-Channel Control:** Better control over the effective channel length, particularly at the interface, helps mitigate short-channel effects that become prominent at advanced nodes.\n*   **Enhanced Reliability:** Lower mechanical stress at region boundaries reduces defect formation, leading to more robust and longer-lasting devices.\n\n**Code-Level Implications:**\nWhile not directly impacting 'code-level' software, this innovation has profound implications for electronic design automation (EDA) tools. Process design kits (PDKs) will need to incorporate the design rules and models for these stepped interfaces. Layout versus schematic (LVS) and design rule checking (DRC) tools will require updates to accurately verify designs utilizing this feature. Device simulation tools (TCAD) will need to model the electrical and physical characteristics of these stepped regions to predict performance accurately. This patent essentially provides new primitives for the physical design of advanced FinFETs, expanding the 'toolkit' available to chip architects and physical designers.","business_analysis":"The patent \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) introduces a critical innovation in semiconductor manufacturing that holds substantial business implications for the entire integrated circuit (IC) ecosystem. As the industry pushes the boundaries of Moore's Law, the ability to pack more transistors onto a chip while simultaneously enhancing performance and energy efficiency is paramount. This invention directly addresses a significant challenge in advanced FinFET architectures, creating a substantial market opportunity and offering considerable competitive advantages.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach well over $1 trillion in the coming years, with advanced logic and memory components being primary growth drivers. FinFET technology, underpinning virtually all cutting-edge processors (CPUs, GPUs, AI accelerators), constitutes a massive segment of this market. Any innovation that improves FinFET performance, yield, or design flexibility directly taps into this multi-billion-dollar market. The ability of this patent to enable more efficient heterogeneous integration on a single die makes it relevant for virtually all high-volume, high-value chip categories, including data center processors, premium mobile SoCs, automotive AI, and advanced IoT devices.\n\n**Competitive Advantages:**\nCompanies that adopt the technology described in \"Integrated Circuit Device and Method of Manufacturing the Same\" stand to gain several distinct competitive advantages:\n1.  **Superior Performance and Power Efficiency:** By allowing for optimized integration of different fin widths, devices can achieve higher clock speeds and lower power consumption simultaneously, a critical differentiator in today's market.\n2.  **Improved Manufacturing Yield:** The controlled 'inter-region stepped portion' mitigates structural defects and electrical variability common at interfaces of different fin dimensions. Higher yield directly translates to lower manufacturing costs per chip, enhancing profitability.\n3.  **Faster Time-to-Market:** Simplified and more reliable integration processes can accelerate design cycles and reduce the iterations required to bring new products to market.\n4.  **Enhanced Design Flexibility:** Chip architects can pursue more ambitious heterogeneous SoC designs, leading to highly differentiated products that can outperform competitors.\n5.  **IP Licensing Potential:** For the patent holder, this technology represents a valuable intellectual property asset that can be licensed to other semiconductor manufacturers, generating significant royalty revenue.\n\n**Revenue Potential and Business Models:**\nFor semiconductor foundries and IDMs (Integrated Device Manufacturers), the revenue potential lies in producing higher-value, higher-performance chips with better margins. The improved yield and performance characteristics can command premium pricing. For fabless design houses, access to this manufacturing capability via foundry partners enables them to design more competitive products, increasing their market share and profitability. The business model could involve direct adoption by major players like Intel, TSMC, Samsung, or GlobalFoundries, or through licensing agreements that allow broader industry access.\n\n**Strategic Positioning:**\nThis innovation strategically positions its adopters at the forefront of FinFET technology. As process nodes shrink to 3nm and beyond, the challenges of managing physical interfaces become exponentially more complex. This patent provides a robust solution that can extend the viability and performance scaling of FinFETs, offering a critical pathway for future technological leadership. It enables companies to differentiate their products not just on raw performance, but also on efficiency, reliability, and the ability to integrate diverse functionalities seamlessly.\n\n**ROI Projections:**\nInvesting in R&D and manufacturing processes to implement this technology could yield significant returns. A 5-10% improvement in manufacturing yield for a high-volume product line could translate into hundreds of millions of dollars in cost savings annually. Furthermore, the ability to deliver best-in-class performance and power efficiency can lead to increased market share and premium pricing, driving substantial revenue growth. The long-term ROI is also tied to maintaining technological leadership and securing future design wins in an intensely competitive industry.","faqs":[{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) is a patent that describes an innovative design and fabrication method for advanced integrated circuits (ICs). Specifically, it focuses on improving FinFET (Fin Field-Effect Transistor) technology, which is crucial for modern high-performance and low-power chips.\n\nAt its core, this patent introduces an IC device that incorporates active regions (the 'fins') of different widths on a single substrate. One key aspect is the inclusion of a 'first-fin-type active region' with a broader width and a 'second-fin-type active region' with a narrower width. This differential in fin width allows for the optimization of transistors for varied electrical characteristics, such as high speed or low power consumption.\n\nThe most significant innovation of the Integrated Circuit Device and Method of Manufacturing the Same is the 'inter-region stepped portion.' This unique structural feature is formed precisely at the interface between these different fin-width regions, specifically on the bottom surface of the substrate. This stepped portion creates a controlled, gradual transition between the regions, addressing critical challenges in semiconductor manufacturing. It's designed to enhance the structural integrity and electrical performance of the integrated circuit.\n\nEssentially, this technology provides a more elegant and robust way to combine different types of transistors on a single chip, leading to more efficient, powerful, and reliable electronic devices. It represents a foundational improvement in how heterogeneous integrated circuits are designed and produced, pushing the boundaries of silicon capabilities.","question":"What is Integrated Circuit Device and Method of Manufacturing the Same?"},{"answer":"The core mechanism of the \"Integrated Circuit Device and Method of Manufacturing the Same\" revolves around the precise engineering of fin-type active regions and their interfaces within an integrated circuit. The invention describes a device where active regions, which are essentially the channels of FinFET transistors, can have different widths on the same silicon substrate.\n\nSpecifically, it features a first active region with a certain width and a second active region with a smaller width. This difference in width is critical because it allows transistors in different parts of the chip to be optimized for different purposes—e.g., wider fins for high-speed computation (higher current drive) and narrower fins for power efficiency (lower leakage current).\n\nThe key to how this patent works is the 'inter-region stepped portion.' This stepped structure is formed at the interface where the wider fin region meets the narrower fin region, on the bottom surface of the substrate (typically within the dielectric isolation layer). Instead of an abrupt change in topography, which can cause stress and defects, this stepped portion provides a gradual and controlled transition. This controlled interface ensures that subsequent manufacturing steps, such as gate formation and doping, are more uniform and less prone to errors. It also helps in managing mechanical stress within the silicon lattice, which is crucial for device reliability.\n\nBy creating this stable and electrically optimized transition, the Integrated Circuit Device and Method of Manufacturing the Same enables seamless integration of diverse transistor types, leading to improved electrical performance, reduced power consumption, and higher manufacturing yields for advanced chips. It essentially allows different 'gears' of a chip to connect smoothly, maximizing overall efficiency and performance.","question":"How does Integrated Circuit Device and Method of Manufacturing the Same work?"},{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" patent solves a significant and long-standing problem in advanced semiconductor manufacturing, particularly concerning FinFET technology. This problem arises from the need to integrate diverse functional blocks—each with different performance and power requirements—onto a single integrated circuit (IC).\n\nModern System-on-a-Chip (SoC) designs require both high-performance transistors (typically using wider FinFET fins for higher current drive) and low-power transistors (using narrower fins for reduced leakage). The challenge lies in creating a smooth, reliable, and electrically sound interface when transitioning between these active regions of different fin widths on the same silicon substrate. Prior art methods often struggled with this transition, leading to several critical issues:\n\n1.  **Mechanical Stress and Defects:** Abrupt changes in fin width or underlying topography could induce significant mechanical stress within the silicon, leading to the formation of crystal defects, which degrade device reliability and yield.\n2.  **Manufacturing Complexity and Variability:** Sharp topographical discontinuities made subsequent lithography, etching, and deposition steps difficult to control, resulting in non-uniform fin profiles, critical dimension variations, and increased process variability.\n3.  **Sub-optimal Electrical Performance:** The inconsistencies at these interfaces could lead to variations in threshold voltage, increased parasitic capacitances, and exacerbated short-channel effects, ultimately hindering the chip's overall performance and power efficiency.\n\nThe Integrated Circuit Device and Method of Manufacturing the Same directly addresses these problems by introducing a precisely engineered 'inter-region stepped portion' at the interface. This stepped structure provides a controlled, gradual transition, mitigating mechanical stress, improving process control, and ensuring more consistent electrical characteristics. In essence, it solves the problem of inefficient and defect-prone integration of diverse FinFET types, unlocking new levels of chip design flexibility and performance.","question":"What problem does Integrated Circuit Device and Method of Manufacturing the Same solve?"},{"answer":"The patent \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) does not list specific individual inventors or an assignee in the provided abstract. Patent filings typically include detailed information about the inventors and the assignee (the company or entity to whom the patent rights are assigned).\n\nIn the context of large-scale semiconductor innovations, it is common for such patents to be the result of collaborative research and development efforts by teams of engineers and scientists within major technology corporations or research institutions. These teams pool their expertise in areas such as materials science, device physics, process engineering, and lithography to develop complex solutions like the one described in this patent.\n\nWhile the abstract focuses on the technical details of the invention itself, the full patent document, accessible via official patent databases, would provide the complete list of inventors and the assignee. This information is crucial for understanding the intellectual property landscape and the specific entities driving innovation in integrated circuit device manufacturing. Without that specific data here, we can infer it's a product of advanced corporate R&D in the semiconductor field. The absence of specific inventors in the provided snippet prevents a direct answer to 'who invented' this particular Integrated Circuit Device and Method of Manufacturing the Same.","question":"Who invented Integrated Circuit Device and Method of Manufacturing the Same?"},{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" patent offers several key benefits that are crucial for advancing integrated circuit (IC) technology, particularly in the realm of FinFET-based devices. These advantages translate directly into more powerful, efficient, and reliable electronic products.\n\n1.  **Enhanced Heterogeneous Integration:** The primary benefit is the ability to seamlessly integrate fin-type active regions of different widths (e.g., wider fins for high performance, narrower fins for low power) on a single chip. This allows for highly optimized System-on-a-Chip (SoC) designs that can simultaneously achieve high speed and low power consumption without compromise.\n2.  **Improved Manufacturing Yield and Reliability:** The unique 'inter-region stepped portion' provides a controlled, gradual transition between different fin-width regions. This significantly reduces mechanical stress at the interface, thereby minimizing the formation of defects (like dislocations or cracks) during fabrication. Fewer defects lead to higher manufacturing yields (more functional chips per wafer) and improved long-term device reliability.\n3.  **Superior Electrical Performance:** The controlled interface ensures more uniform fin profiles and reduced electrical variability. This results in more consistent threshold voltages, lower leakage currents, better drive capabilities, and reduced parasitic capacitances across the chip, ultimately boosting overall electrical performance and power efficiency.\n4.  **Greater Design Flexibility:** Chip architects gain unprecedented freedom to optimize individual functional blocks within an SoC without being constrained by the previous difficulties of integrating diverse transistor types. This enables more innovative and specialized chip designs for various applications.\n5.  **Cost Reduction:** Higher manufacturing yields and reduced defect rates directly translate to lower production costs per chip, making advanced ICs more economically viable. The Integrated Circuit Device and Method of Manufacturing the Same thus provides a pathway for both technological advancement and economic efficiency in semiconductor fabrication.","question":"What are the key benefits of Integrated Circuit Device and Method of Manufacturing the Same?"},{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" significantly differentiates itself from prior art methods by addressing the critical challenge of integrating fin-type active regions of varying widths on a single integrated circuit (IC) substrate in a fundamentally superior way.\n\nPrior art approaches typically struggled with abrupt transitions at the interface where a wider FinFET fin region met a narrower one. These abrupt changes presented several problems:\n\n*   **Stress Induction:** Sharp topographical changes caused significant mechanical stress in the silicon and surrounding dielectric materials, leading to the formation of defects (e.g., dislocations) that compromised device reliability and performance.\n*   **Process Non-Uniformity:** Abrupt interfaces made subsequent manufacturing steps like lithography, etching, and material deposition highly challenging. This resulted in non-uniform fin profiles, critical dimension variations, and increased process variability, leading to lower manufacturing yields.\n*   **Electrical Instability:** The lack of precise control over these interfaces contributed to inconsistent electrical characteristics, such as variations in threshold voltage and increased parasitic effects, hindering overall chip performance.\n\nIn contrast, the Integrated Circuit Device and Method of Manufacturing the Same introduces a novel 'inter-region stepped portion.' This stepped structure is precisely formed on the bottom surface of the substrate at the interface between the different fin-width regions. This provides a controlled, gradual, and architecturally sound transition. The key difference is moving from an uncontrolled, abrupt discontinuity to a meticulously engineered, gradual interface.\n\nThis innovation results in several distinct advantages over prior art: significantly reduced mechanical stress, improved uniformity in subsequent fabrication steps, better control over electrical parameters, and higher manufacturing yields. Essentially, while prior art struggled to 'force' different fin widths together, this patent provides an elegant 'bridge' that allows them to coexist optimally, marking a substantial leap forward in FinFET integration and the method of manufacturing the same.","question":"How is Integrated Circuit Device and Method of Manufacturing the Same different from prior art?"},{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" patent is poised to have a profound impact across a wide array of industries that rely heavily on advanced integrated circuits (ICs) and semiconductor technology. Its ability to enable more efficient, powerful, and reliable chips will drive innovation in virtually every sector touched by electronics.\n\n1.  **High-Performance Computing (HPC) and Data Centers:** This technology will lead to more efficient CPUs and GPUs, crucial for cloud computing infrastructure, big data analytics, and scientific research. Data centers will benefit from higher performance-per-watt, reducing operational costs and environmental footprint.\n2.  **Artificial Intelligence (AI) and Machine Learning:** AI accelerators, whether in the cloud or at the edge, demand immense computational power and energy efficiency. The patent's ability to optimize both high-performance and low-power transistors on a single chip will be critical for developing next-generation AI hardware, from neural network processors to specialized inference engines.\n3.  **Mobile and Consumer Electronics:** Smartphones, tablets, wearables, and other consumer gadgets will see significant improvements in processing speed, multi-tasking capabilities, and battery life. This will enable richer user experiences, more complex applications, and always-on functionalities.\n4.  **Automotive Industry:** Autonomous vehicles and advanced driver-assistance systems (ADAS) require highly reliable, high-performance, and energy-efficient SoCs. The robust integration capabilities of the Integrated Circuit Device and Method of Manufacturing the Same will be essential for these mission-critical applications.\n5.  **Internet of Things (IoT) and Edge Computing:** For a vast network of connected devices, power efficiency and compact size are paramount. This innovation allows for more integrated and efficient chips, extending battery life and enhancing the processing capabilities of edge devices, from smart sensors to industrial IoT controllers.\n\nIn essence, any industry that benefits from smaller, faster, more power-efficient, and more reliable microchips will feel the positive ripple effects of the Integrated Circuit Device and Method of Manufacturing the Same, driving forward the digital transformation across the globe.","question":"What industries will Integrated Circuit Device and Method of Manufacturing the Same impact?"},{"answer":"The patent \"Integrated Circuit Device and Method of Manufacturing the Same\" (US-9853029) has specific dates associated with its lifecycle in the patent office.\n\nAccording to the provided information, the **Filing Date** for this patent was **2016-03-02** (March 2, 2016). The filing date is when the complete patent application, including the specification, claims, and drawings, was officially submitted to the patent office. This date is crucial as it typically establishes the priority date for the invention.\n\nThe **Publication Date** for this patent was **2017-12-26** (December 26, 2017). The publication date is when the patent office makes the application publicly available. This often happens before the patent is officially granted, allowing the public and competitors to review the disclosed invention.\n\nThe term 'granted' or 'issued' refers to the date when the patent rights are officially conferred upon the applicant after a successful examination process. While the provided data lists the publication date, it is the issuance date that marks the beginning of the patent's enforceable term. For US patents, the publication date and grant date are usually different, with the grant date typically occurring after publication. To confirm the exact grant date, one would consult official patent databases using the patent number US-9853029. The Integrated Circuit Device and Method of Manufacturing the Same thus demonstrates a clear timeline from initial conception and filing to public disclosure, showcasing its journey through the intellectual property system.","question":"When was Integrated Circuit Device and Method of Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the \"Integrated Circuit Device and Method of Manufacturing the Same\" patent are extensive and span across the entire spectrum of modern electronics, driven by its ability to create more efficient, powerful, and reliable integrated circuits (ICs).\n\n1.  **High-Performance Processors (CPUs, GPUs):** This technology enables the design of next-generation microprocessors for servers, desktops, and gaming consoles. By seamlessly integrating different FinFET widths, it allows for higher clock speeds and greater computational density while managing power consumption, crucial for demanding workloads in data centers and personal computing.\n2.  **Mobile System-on-a-Chip (SoC) Solutions:** For smartphones, tablets, and wearables, the patent facilitates the creation of SoCs that deliver superior performance for complex applications (e.g., AI, augmented reality) alongside extended battery life. This is achieved by optimally balancing high-performance cores with low-power components on a single chip.\n3.  **Artificial Intelligence (AI) Accelerators:** Dedicated AI chips, both for training in the cloud and inference at the edge, can leverage this innovation to achieve higher throughput and greater energy efficiency. The ability to fine-tune transistor characteristics is vital for optimizing neural network processing units (NPUs) and other specialized AI hardware.\n4.  **Automotive and Industrial Electronics:** Mission-critical applications in autonomous vehicles (e.g., ADAS systems, infotainment) and industrial control systems demand extremely reliable and robust chips. The improved yield and reduced defectivity offered by this patent make it ideal for these high-stakes environments.\n5.  **IoT and Edge Computing Devices:** For the vast and growing Internet of Things ecosystem, chips that are small, highly integrated, and extremely power-efficient are essential. This technology allows for the creation of such devices with enhanced processing capabilities and longer battery life, enabling new applications in smart homes, smart cities, and industrial IoT.\n\nThe Integrated Circuit Device and Method of Manufacturing the Same thus provides a foundational technology that will be commercially applied in virtually every sector requiring cutting-edge semiconductor components, driving innovation and market growth.","question":"What are the commercial applications of Integrated Circuit Device and Method of Manufacturing the Same?"},{"answer":"The \"Integrated Circuit Device and Method of Manufacturing the Same\" patent lays a foundational groundwork that will likely see several exciting future developments as semiconductor technology continues to evolve. Its core principle of managing heterogeneous FinFET interfaces will remain critical.\n\n1.  **Integration into Advanced Process Nodes:** Expect to see the methodologies described in this patent fully integrated and optimized within the industry's most advanced process nodes, such as 3nm, 2nm, and beyond. As dimensions shrink, the precise control offered by the 'inter-region stepped portion' becomes even more indispensable for maintaining performance and yield.\n2.  **Extension to New Transistor Architectures:** While currently applied to FinFETs, the principles of managing transitions between different active region characteristics could be extended to future transistor architectures like Gate-All-Around (GAA) or nanosheet FETs. These next-generation designs also involve complex 3D structures and variable channel dimensions, where a controlled interface will be crucial.\n3.  **3D Integration and Stacking:** As chips move towards 3D stacking (e.g., for heterogeneous integration of logic and memory), the concepts from this patent might influence how different layers or blocks with varying performance needs are integrated vertically. Ensuring stress-free and electrically optimal interfaces between stacked components is a major challenge that this patent's philosophy could help address.\n4.  **Novel Material Integration:** Future developments might involve adapting the method of manufacturing the same to new channel materials (e.g., SiGe, III-V semiconductors) or gate dielectrics. The ability to create controlled interfaces will be vital for harnessing the unique properties of these advanced materials without introducing new integration challenges.\n5.  **AI-Driven Design and Optimization:** The design rules and parameters derived from this patent could be further optimized using AI and machine learning algorithms. This could lead to even more precise and efficient stepped portion designs, tailored dynamically to specific chip architectures and performance targets.\n\nIn essence, the Integrated Circuit Device and Method of Manufacturing the Same represents a key enabler for the continued scaling and diversification of integrated circuits, paving the way for innovations across the entire computing spectrum for decades to come.","question":"What are the future developments expected for Integrated Circuit Device and Method of Manufacturing the Same?"}],"topics":["Integrated Circuit Device and Method of Manufacturing the Same","FinFET","semiconductor manufacturing","IC device","chip design","relentless","pursuit","scaling"],"tech_cluster":null},"seo":{"title":"Integrated Circuit Device and Method of Manufacturing the Same - Patent US-9853029","description":"Discover the Integrated Circuit Device and Method of Manufacturing the Same patent (US-9853029). Novel FinFET design with stepped regions for superior performance and yield.","keywords":["Integrated Circuit Device and Method of Manufacturing the Same","FinFET","semiconductor manufacturing","IC device","chip design","stepped active region","US-9853029","nanotechnology","integrated circuit patent","advanced silicon"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853029","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853029","citation_suggestion":"Patentable. \"Integrated circuit device and method of manufacturing the same\" (US-9853029). https://patentable.app/patents/US-9853029","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853029","json":"https://patentable.app/api/llm-context/US-9853029","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:53.820Z"}