{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853037","patent":{"patent_number":"US-9853037","title":"Integrated assemblies","assignee":null,"inventors":[],"filing_date":"2015-11-23T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have majority carriers of the same conductivity type. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies."},"analysis":{"summary":"The Integrated Assemblies patent (US-9853037) introduces a novel semiconductor device architecture designed to enhance performance and simplify manufacturing processes. At its core, this innovation presents an integrated assembly featuring a semiconductor channel material with a precisely defined boundary region. In this region, a more-heavily-doped area seamlessly interfaces with a less-heavily-doped area, both utilizing majority carriers of the same conductivity type. This design ensures optimized charge carrier distribution and efficient electrical pathways.\n\nA key aspect of this technology is its unique gating structure, positioned adjacent to the semiconductor channel. This gating structure is formed from a common and continuous material, comprising both a gating region and an interconnecting region. The gating region is strategically designed to extend along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and crucially, the entire boundary region. This comprehensive coverage provides precise and uniform electrostatic control over the channel, mitigating performance inconsistencies often seen in traditional multi-material gate designs.\n\nFurthermore, the interconnecting region extends laterally outward from the gating region on the side opposite the semiconductor channel, and is notably narrower than the length of the gating region. This specific geometric configuration is engineered to minimize parasitic capacitance, reduce signal propagation delays, and optimize the overall device footprint, thereby contributing to higher operating frequencies and lower power consumption. The patent also encompasses innovative methods for forming these integrated assemblies, suggesting a pathway to more efficient and cost-effective manufacturing processes.\n\nThis technology addresses critical challenges in semiconductor scaling, offering a solution for creating more compact, energy-efficient, and powerful electronic components. Its business value lies in enabling the development of next-generation microprocessors, memory devices, and sensors with superior performance characteristics, opening up significant market opportunities in high-performance computing, consumer electronics, and IoT. Companies adopting this approach could gain a substantial competitive advantage through improved device performance, reduced manufacturing complexity, and enhanced product reliability.","layman_explanation":"### What Problem Does This Solve?\nIn the world of electronics, every device, from your smartphone to a supercomputer, relies on tiny components called semiconductors. These semiconductors act like microscopic switches, controlling the flow of electricity. A constant challenge for engineers is making these switches smaller, faster, and more energy-efficient without compromising reliability. One major hurdle is effectively managing the transition between different electrical properties within these tiny components, specifically where 'heavily-doped' (think of it as a superhighway for electricity) and 'less-heavily-doped' (a regular road) regions meet. Traditional methods often lead to inefficiencies, complex manufacturing, and limits on how much power can be packed into a small space. It’s like trying to perfectly merge two very different roads; without a smart design, you get traffic jams and wasted fuel.\n\n### How Does It Work?\nThe Integrated Assemblies patent offers a sophisticated yet elegant solution to this core problem. Imagine a tiny electronic road. This innovation designs a special section of that road where the 'superhighway' (heavily-doped region) smoothly and precisely blends into the 'regular road' (less-heavily-doped region). Both sections are designed to carry electricity in the same fundamental way, just at different 'densities.' Now, to control the traffic on this road, this patent introduces a 'traffic controller' (a gating structure). What's truly clever is that this traffic controller is made from one continuous, unified material, and it's strategically placed to oversee *all* parts of this blended road – the superhighway, the regular road, and especially the critical merge point. This single, comprehensive control ensures that electricity flows efficiently and precisely, without any 'traffic jams' or wasted energy.\n\nFurthermore, the physical 'exit ramp' for this traffic controller is designed to be narrower than the main control area. This isn't just a design choice; it's a functional one. By making this part slimmer, it reduces any unwanted electrical interference with other nearby components, allowing the entire system to operate faster and more efficiently. In essence, this technology provides a blueprint for building more reliable, higher-performing, and easier-to-manufacture semiconductor 'roads' and 'traffic controllers' than ever before.\n\n### Why Does This Matter?\nThis innovation holds significant implications for nearly every sector driven by technology. For businesses, it translates directly into the ability to develop next-generation products that are not only more powerful but also consume less energy. Think of smartphones with longer battery life, data centers that are more energy-efficient, or autonomous vehicles with faster, more reliable processing capabilities. This patent enables higher integration density, meaning more functionality can be packed into smaller chips, which is crucial for miniaturization trends in IoT, wearables, and advanced medical devices.\n\nFor investors, this represents a foundational improvement in semiconductor technology, a sector with immense growth potential. Companies that adopt or license this approach could gain a significant competitive edge by offering superior products or by streamlining their manufacturing processes, leading to cost efficiencies and higher profit margins. It's a strategic move towards future-proofing technology portfolios in an era where incremental improvements are no longer sufficient to meet market demands. The ability to simplify complex fabrication steps while boosting performance is a rare and valuable combination.\n\n### What's Next?\nThe principles behind Integrated Assemblies are highly scalable and adaptable, suggesting broad applications across various types of semiconductor devices. We can expect this technology to influence the design of future microprocessors, memory chips, and specialized sensors. As the industry continues to push the boundaries of physics, innovations like this provide crucial pathways to maintain the pace of technological advancement. For investors and business leaders, understanding and potentially integrating this approach into long-term strategies could be key to unlocking new market opportunities and sustaining growth in the rapidly evolving digital landscape.","technical_analysis":"The Integrated Assemblies patent (US-9853037) describes a sophisticated integrated assembly primarily focused on optimizing the interface between doped semiconductor regions and their associated gating structures. The technical architecture revolves around a semiconductor channel material engineered with a critical boundary region. This boundary is formed where a more-heavily-doped region transitions into a less-heavily-doped region, with both segments exhibiting majority carriers of the same conductivity type. This specific doping profile is crucial for establishing an efficient current path and controlling the electric field distribution across the junction, which directly impacts device parameters such as threshold voltage, transconductance, and leakage current.\n\nThe core technical innovation lies in the design and material composition of the gating structure. Situated adjacent to the semiconductor channel, this structure is uniquely formed from a *common and continuous material*. This choice of material uniformity is significant; it simplifies fabrication complexity typically associated with multi-layer gate stacks and can improve the integrity of the gate dielectric, leading to enhanced device reliability and reduced variability across manufacturing batches. The gating structure is composed of two primary parts: a gating region and an interconnecting region.\n\nThe gating region is strategically designed with a length that extends along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and critically, the entire boundary region. This comprehensive coverage ensures uniform electrostatic control over the entire active channel area, including the sensitive transition zone. By maintaining control across the boundary, this approach can effectively mitigate issues like short-channel effects, drain-induced barrier lowering (DIBL), and subthreshold leakage, which become more pronounced as device dimensions shrink. The unified gate control over varying doping concentrations allows for precise tuning of device characteristics and potentially higher current drive capabilities.\n\nRegarding implementation details, the common and continuous nature of the gating material implies a streamlined fabrication process. Techniques such as advanced atomic layer deposition (ALD) or chemical vapor deposition (CVD) could be employed to deposit a uniform gate material (e.g., polysilicon or metal gate) followed by precise patterning. The ability to define the gate over both doped regions and the boundary in a single lithographic and etching step would reduce process steps, improve alignment tolerances, and consequently lower manufacturing costs and increase yield. The patent also explicitly mentions methods of forming these assemblies, suggesting a focus on practical manufacturability.\n\nThe interconnecting region, which extends laterally outward from the gating region on the side opposite the semiconductor channel, is a crucial design element for performance. It is specifically designed to be *narrower* than the length of the gating region. This geometric optimization serves to minimize parasitic capacitance between the gate and other device terminals (e.g., source/drain contacts, substrate). Reduced parasitic capacitance directly translates to higher operating frequencies, faster switching speeds, and lower dynamic power consumption – all critical performance characteristics for modern high-speed and low-power integrated circuits. This design choice highlights a meticulous consideration for signal integrity and overall power efficiency.\n\nIn terms of performance characteristics, the Integrated Assemblies approach promises devices with improved transconductance, lower OFF-state leakage currents, and enhanced switching speeds. The precise control over the channel through the continuous gate, coupled with reduced parasitics, enables superior device scaling and integration density. This technology has profound implications for advanced CMOS, FinFET, and potentially Gate-All-Around (GAA) architectures, offering a foundational improvement for future generations of microprocessors, memory arrays, and specialized logic circuits. The uniform gate control over the boundary region is particularly advantageous for mitigating variability in device characteristics, a common challenge in advanced process nodes.","business_analysis":"The Integrated Assemblies patent (US-9853037) presents a significant opportunity for market disruption and value creation within the global semiconductor industry. This innovation, by fundamentally improving the design and manufacturability of semiconductor devices, addresses critical bottlenecks that have hindered performance scaling and cost reduction. The market opportunity for this technology is substantial, spanning across high-growth sectors such as artificial intelligence, 5G communications, automotive electronics, data centers, and the Internet of Things (IoT), all of which demand increasingly powerful, energy-efficient, and compact integrated circuits.\n\nOne of the primary competitive advantages offered by this technology is its dual impact on performance and fabrication. By enabling more precise control over the semiconductor channel and simplifying the gating structure through a common, continuous material, Integrated Assemblies can lead to devices with superior electrical characteristics—faster switching, lower power consumption, and improved reliability. Simultaneously, the streamlined manufacturing process, potentially requiring fewer steps and reducing material complexity, can translate into significant cost savings and higher yields for chip manufacturers. This dual advantage is a powerful differentiator in a highly competitive market where both performance and cost efficiency are paramount.\n\nRevenue potential stemming from this patent is multifaceted. Semiconductor foundries licensing or adopting this technology could command premium pricing for next-generation chips built on these principles, or gain market share by offering more cost-effective high-performance solutions. Device manufacturers, from smartphone makers to server providers, would benefit from superior components, leading to more competitive end-products. Furthermore, the ability to create smaller, more efficient chips could open entirely new product categories and applications, particularly in edge computing and advanced sensor integration where power and space are severely constrained.\n\nBusiness models could include direct licensing of the patent to major semiconductor manufacturers (e.g., TSMC, Samsung Foundry, Intel), or strategic partnerships for joint development and co-creation of specialized components. Companies that integrate this technology into their proprietary chip designs could establish a strong intellectual property moat, protecting their market position. There's also potential for creating specialized IP blocks or design kits based on this approach, which could be licensed to chip designers for faster product development.\n\nStrategically, this innovation allows companies to position themselves at the forefront of advanced semiconductor manufacturing. It offers a pathway to overcome the physical limits of Moore's Law, not just through shrinking feature sizes, but through intelligent architectural improvements. Companies investing in or leveraging this technology will be better equipped to meet the escalating demands for high-performance computing (HPC) and artificial intelligence (AI) accelerators, where every watt and every nanometer counts. It also provides a robust foundation for developing resilient and high-integrity components essential for mission-critical applications in autonomous vehicles and medical devices.\n\nThe Return on Investment (ROI) for adopting the principles of Integrated Assemblies could be substantial. Reduced development cycles due to simplified design rules, lower manufacturing costs from fewer process steps, and increased revenue from superior product performance combine to offer a compelling economic case. Early movers in integrating this technology could secure significant market leadership, setting new industry standards for efficiency and performance in advanced microelectronics.","faqs":[{"answer":"Integrated Assemblies (US-9853037) is a groundbreaking patent that introduces a novel architecture for semiconductor devices. At its core, this innovation describes an integrated assembly featuring a semiconductor channel material with a unique boundary region. In this region, a more-heavily-doped area and a less-heavily-doped area seamlessly interface, both having majority carriers of the same conductivity type. This design optimizes the electrical pathway within the device.\n\nThe patent also details a sophisticated gating structure adjacent to this semiconductor channel. This gating structure is made from a common and continuous material, which simplifies manufacturing and enhances reliability. It includes a gating region that precisely extends across segments of both the heavily and less-heavily doped regions, as well as the critical boundary region. This comprehensive control is vital for efficient device operation.\n\nFurthermore, the interconnecting region of this gating structure, which extends laterally outward, is designed to be narrower than the gating region's length. This specific geometry helps to minimize parasitic capacitance, leading to faster and more energy-efficient devices. Essentially, Integrated Assemblies represents a fundamental improvement in how semiconductor components are designed and fabricated, promising advancements in performance and manufacturability for next-generation electronics.\n\nKeywords: Integrated Assemblies, semiconductor patent, device architecture, doping, gating structure, microelectronics.","question":"What is Integrated Assemblies?"},{"answer":"The core functionality of Integrated Assemblies revolves around two primary innovations: an optimized semiconductor channel and a unified gating structure.\n\nFirstly, the semiconductor channel material features a precisely engineered boundary where a heavily-doped region smoothly transitions into a less-heavily-doped region. Both regions are designed to conduct electricity using the same type of charge carriers (e.g., electrons or holes). This optimized transition ensures efficient current flow and minimizes resistance, which are crucial for high-performance devices.\n\nSecondly, a key aspect is the gating structure, which acts like a control switch. This structure is uniquely made from a single, continuous material, simplifying the manufacturing process. It comprises a gating region that is strategically positioned to cover not only the heavily and less-heavily doped segments but also the critical boundary region between them. This unified and comprehensive coverage allows for highly precise electrostatic control over the entire active channel, ensuring consistent and stable device operation.\n\nFinally, the interconnecting region of the gate, which connects the gating region to other parts of the circuit, is designed to be narrower than the gating region itself. This specific geometry is crucial for reducing unwanted electrical interference (parasitic capacitance), which in turn allows the device to operate at higher speeds and consume less power. By combining these elements, Integrated Assemblies provides a more efficient, reliable, and manufacturable semiconductor device.\n\nKeywords: Integrated Assemblies function, semiconductor channel, gating mechanism, doping control, parasitic capacitance, device efficiency.","question":"How does Integrated Assemblies work?"},{"answer":"Integrated Assemblies addresses several critical challenges inherent in modern semiconductor device design and manufacturing, particularly as devices continue to shrink in size while demanding higher performance and lower power consumption.\n\nOne major problem it solves is the inefficient management of electrical transitions at the interfaces between differently doped semiconductor regions. In traditional designs, these boundary regions can act as bottlenecks, leading to increased resistance, power leakage, and reduced device speed. Integrated Assemblies overcomes this by providing a meticulously designed boundary and a unified control mechanism that ensures smooth and efficient current flow across these critical zones.\n\nAnother significant issue is the complexity and limitations of conventional gating structures. Prior art often uses multi-layer gate stacks, which introduce numerous material interfaces, increase fabrication complexity, and can lead to inconsistent device characteristics. This innovation simplifies the gate structure by utilizing a common and continuous material, enhancing reliability and reducing manufacturing steps. Furthermore, it tackles the problem of parasitic capacitance, which limits operating frequency and increases power consumption in nanoscale devices, through its optimized interconnecting region geometry.\n\nBy solving these problems, Integrated Assemblies enables the creation of semiconductor devices that are not only faster and more energy-efficient but also simpler and more cost-effective to manufacture. This is crucial for sustaining the pace of technological advancement in microelectronics.\n\nKeywords: Integrated Assemblies problem, semiconductor challenges, doping interface, gate stack complexity, parasitic capacitance, manufacturing efficiency, power consumption.","question":"What problem does Integrated Assemblies solve?"},{"answer":"The patent data provided does not specify the names of the inventors. However, the assignee, which is the entity to whom the patent rights are legally transferred, is also not listed in the provided data. Typically, such patents are invented by engineers and researchers working within large semiconductor companies, research institutions, or university labs.\n\nThese teams often comprise experts in material science, electrical engineering, and nanofabrication, collaborating to push the boundaries of microelectronic design. The collective expertise required to develop an innovation like Integrated Assemblies, which touches upon fundamental aspects of semiconductor physics and manufacturing processes, is substantial. Therefore, while specific individual names are not available here, it represents the culmination of advanced research and development efforts.\n\nKeywords: Integrated Assemblies inventors, patent assignee, semiconductor research, microelectronics R&D, patent ownership.","question":"Who invented Integrated Assemblies?"},{"answer":"The Integrated Assemblies patent offers a multitude of benefits that are poised to significantly impact the semiconductor industry and the broader electronics landscape.\n\nFirstly, it delivers **enhanced device performance**. By optimizing the semiconductor channel's boundary region and providing uniform electrostatic control via a continuous gating structure, devices can achieve higher switching speeds, improved current drive capabilities, and more stable operation. This translates to faster processors and more responsive electronic gadgets.\n\nSecondly, a major benefit is **improved energy efficiency**. The reduced parasitic capacitance, achieved through the narrower interconnecting region, minimizes wasted power during switching. This leads to lower static and dynamic power consumption, extending battery life in mobile devices and reducing energy costs in data centers.\n\nThirdly, **simplified manufacturing processes** are a significant advantage. The use of a common and continuous material for the gating structure reduces the number of complex fabrication steps, potentially lowering production costs and increasing manufacturing yields. This makes advanced semiconductor technology more accessible and cost-effective to produce.\n\nFinally, the innovation contributes to **greater device reliability and scalability**. Fewer material interfaces and consistent gate control lead to more robust devices with reduced variability, making them suitable for demanding applications and enabling further miniaturization in future technology nodes. These combined benefits position Integrated Assemblies as a crucial enabler for next-generation electronics.\n\nKeywords: Integrated Assemblies benefits, device performance, energy efficiency, manufacturing costs, reliability, scalability, semiconductor innovation.","question":"What are the key benefits of Integrated Assemblies?"},{"answer":"Integrated Assemblies distinguishes itself from prior art through several key architectural and material innovations that address long-standing challenges in semiconductor device design.\n\nOne significant difference lies in its **optimized semiconductor channel boundary**. While prior art often deals with complex and sometimes inefficient transitions between heavily and lightly doped regions, Integrated Assemblies specifically designs this boundary for seamless integration and efficient carrier transport, minimizing resistance and improving electrical characteristics at this critical junction.\n\nCrucially, the patent introduces a **gating structure made from a common and continuous material**, a stark contrast to multi-layer gate stacks prevalent in prior art. Traditional multi-material gates introduce numerous interfaces, which can lead to defects, increased manufacturing complexity, and inconsistent performance. By using a single, unified material for the gate, Integrated Assemblies simplifies fabrication, enhances gate dielectric integrity, and ensures more uniform electrostatic control over the channel.\n\nFurthermore, the **comprehensive coverage of the gating region** across both doped segments and their boundary is a key differentiator. Prior art might struggle with precise and uniform control across varying doping concentrations, leading to performance compromises. This innovation ensures consistent gate modulation over the entire active channel. Lastly, the **narrower interconnecting region** is a deliberate design choice to reduce parasitic capacitance, a common limitation in prior art that restricts operating frequencies and increases power consumption. This optimization significantly boosts speed and efficiency compared to many existing designs.\n\nKeywords: Integrated Assemblies vs prior art, semiconductor differences, common gate material, doping boundary, parasitic capacitance reduction, fabrication simplification, device control.","question":"How is Integrated Assemblies different from prior art?"},{"answer":"The Integrated Assemblies patent is set to have a profound impact across a wide array of industries that rely heavily on advanced semiconductor technology.\n\n**High-Performance Computing (HPC) and Artificial Intelligence (AI):** This innovation will be crucial for developing more powerful and energy-efficient processors and accelerators for data centers, cloud computing, and AI/ML applications. Faster, cooler chips mean more complex AI models can be trained and deployed more efficiently.\n\n**Consumer Electronics:** Devices like smartphones, tablets, laptops, and wearables will benefit from improved performance, longer battery life, and potentially smaller form factors, enhancing the user experience.\n\n**Automotive Industry:** The demand for highly reliable and efficient chips in autonomous vehicles and advanced driver-assistance systems (ADAS) is immense. Integrated Assemblies can provide the robust and high-performance components needed for critical safety and AI functions in cars.\n\n**Internet of Things (IoT) and Edge Computing:** For the vast network of interconnected devices, the ability to create smaller, more power-efficient, and reliable chips is paramount. This technology will accelerate the deployment of smart sensors and edge devices that can process data locally with minimal energy.\n\n**Telecommunications (5G/6G):** Advanced semiconductor devices are fundamental to next-generation wireless infrastructure. Integrated Assemblies can contribute to building more efficient and higher-frequency components for 5G and future 6G networks. Essentially, any industry that benefits from faster, smaller, and more energy-efficient electronics will be positively impacted by this technology.\n\nKeywords: Integrated Assemblies impact, semiconductor industries, HPC, AI, consumer electronics, automotive tech, IoT, 5G, telecommunications.","question":"What industries will Integrated Assemblies impact?"},{"answer":"The Integrated Assemblies patent (US-9853037) was filed on **November 23, 2015**. This marks the initial date when the patent application was submitted to the patent office, establishing the priority date for the invention.\n\nThe patent was subsequently published, and granted on **December 26, 2017**. The publication date is when the patent office makes the details of the application publicly available, regardless of whether it has been granted yet. The granting date signifies that the patent office has examined the application and determined that the invention meets the legal requirements for patentability, officially conferring exclusive rights to the patent holder for a specified period.\n\nThese dates are important milestones in the intellectual property lifecycle of Integrated Assemblies, indicating when the innovation entered the public domain for examination and when its legal protections were formally established. The period between filing and granting allows for thorough examination by patent examiners and potential amendments by the applicant.\n\nKeywords: Integrated Assemblies filing date, patent grant date, US-9853037 timeline, patent lifecycle, publication date, intellectual property.","question":"When was Integrated Assemblies filed/granted?"},{"answer":"The commercial applications of the Integrated Assemblies patent are extensive, given its fundamental improvements to semiconductor device performance and manufacturing. This technology is poised to enhance a wide range of electronic products across multiple sectors.\n\n**High-Performance Processors:** Integrated Assemblies can lead to the development of next-generation Central Processing Units (CPUs), Graphics Processing Units (GPUs), and specialized Application-Specific Integrated Circuits (ASICs) for servers, workstations, and gaming consoles. These will offer faster processing speeds and improved energy efficiency, crucial for demanding computational tasks.\n\n**Memory Devices:** The principles of this innovation can be applied to advanced memory technologies (e.g., DRAM, NAND flash) to create denser, faster, and more reliable memory modules, impacting everything from enterprise storage to consumer electronics.\n\n**Sensors and IoT Devices:** For the burgeoning Internet of Things market, Integrated Assemblies enables the creation of ultra-low-power, highly integrated sensors and microcontrollers. These can be deployed in smart homes, industrial IoT, wearables, and medical devices where compact size and extended battery life are paramount.\n\n**Power Management Integrated Circuits (PMICs):** The improved efficiency and reduced parasitics can enhance PMICs, leading to better power delivery and overall system efficiency in complex electronic systems. Furthermore, the simplified manufacturing methods could reduce production costs for a broad spectrum of integrated circuits, making advanced technology more accessible and competitive. Any product requiring high-performance, energy-efficient, and compact integrated circuits stands to benefit significantly from the commercialization of Integrated Assemblies.\n\nKeywords: Integrated Assemblies commercial applications, CPUs, GPUs, memory technology, IoT sensors, power management, semiconductor commercialization, electronic products.","question":"What are the commercial applications of Integrated Assemblies?"},{"answer":"The foundational nature of the Integrated Assemblies patent suggests a promising trajectory for future developments and broader adoption in the semiconductor industry.\n\nOne key area of future development will likely involve **integration into advanced transistor architectures**. As the industry moves beyond planar transistors to FinFETs and Gate-All-Around (GAA) structures, the principles of precisely controlled doping boundaries and continuous gating structures will be highly adaptable and crucial for maintaining performance gains. We can expect to see refinements in how this technology is implemented within these complex 3D device geometries.\n\nAnother significant development will be in **material science**. While the patent specifies a 'common and continuous material' for the gate, future research may explore novel high-k dielectrics and metal gate materials that further optimize work function, reduce leakage, and enhance reliability. The continuous nature of the gate structure could simplify the integration of these advanced materials.\n\nFurthermore, expect **process optimization for manufacturability**. As the technology matures, fabrication processes will be refined to achieve even greater precision in doping profiles and gate dimensions at the nanoscale, leading to higher yields and lower costs. This could involve new lithography techniques, deposition methods, and etching processes tailored to the unique aspects of Integrated Assemblies.\n\nFinally, **expanded application areas** will emerge. Beyond traditional logic and memory, the enhanced efficiency and performance could make Integrated Assemblies a key enabler for emerging technologies like neuromorphic computing, in-memory computing, and specialized quantum computing interfaces, pushing the boundaries of what's possible in advanced electronics. The patent provides a robust framework for continued innovation in semiconductor design for decades to come.\n\nKeywords: Integrated Assemblies future, transistor architectures, material science, process optimization, FinFET, GAA, neuromorphic computing, quantum computing, semiconductor development.","question":"What are the future developments expected for Integrated Assemblies?"}],"topics":["Integrated Assemblies","semiconductor patent","US-9853037","gating structure","doping profile","relentless","march","semiconductor"],"tech_cluster":null},"seo":{"title":"Integrated Assemblies - Advanced Semiconductor Patent US-9853037","description":"Discover the Integrated Assemblies patent (US-9853037) revolutionizing semiconductor design. Features unique doping control & continuous gating for faster, more efficient chips.","keywords":["Integrated Assemblies","semiconductor patent","US-9853037","gating structure","doping profile","integrated circuits","microelectronics","device fabrication","high-performance computing","energy efficiency","advanced transistors","nanotechnology","chip design"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853037","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853037","citation_suggestion":"Patentable. \"Integrated assemblies\" (US-9853037). https://patentable.app/patents/US-9853037","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853037","json":"https://patentable.app/api/llm-context/US-9853037","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:39:10.937Z"}