{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853042","patent":{"patent_number":"US-9853042","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-06-25T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"The semiconductor device includes a stacked structure having alternately stacked conductive patterns and interlayer insulating patterns, a through-hole passing through the stacked structure, a channel pattern formed in the through-hole and protruding from an inside of the through hole over the through-hole, and a capping conductive pattern formed to be in contact with the protruded channel pattern and have a width greater than the through-hole."},"analysis":{"summary":"The patent titled \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853042) introduces a sophisticated architectural advancement for vertically integrated semiconductor devices. At its core, this innovation provides a method for constructing highly reliable and dense electrical connections within multi-layered chip structures, directly addressing critical challenges in modern semiconductor manufacturing.\n\nThe central problem this patent solves revolves around the limitations of creating robust through-hole contacts in stacked semiconductor devices. As chip designs move towards 3D integration, ensuring stable and low-resistance electrical pathways through numerous alternating layers of conductive and insulating materials becomes increasingly complex. Existing methods often suffer from issues like high contact resistance, manufacturing defects, and reliability concerns, which hinder further scaling and performance improvements.\n\nThe key technical approach of this invention lies in its unique through-hole contact design. It describes a stacked structure comprising alternating conductive and interlayer insulating patterns. A through-hole passes vertically through these layers. Within this through-hole, a distinctive channel pattern is formed, notably protruding from the inside of the hole. This protrusion creates a more defined and potentially larger contact interface. This innovative channel is then complemented by a capping conductive pattern, which is formed in direct contact with the protruded channel and, critically, has a width greater than the through-hole itself. This wider cap ensures a robust, low-resistance, and mechanically stable electrical connection.\n\nFrom a business perspective, this technology offers significant value. It promises enhanced reliability for semiconductor devices, leading to longer product lifespans and reduced warranty costs. Furthermore, by improving the integrity of vertical interconnections, it enables higher integration densities, which is crucial for the development of next-generation memory (e.g., 3D NAND) and logic devices. This translates into more powerful and compact electronic products across various sectors, including AI, IoT, 5G, and high-performance computing.\n\nThe market opportunity for this invention is substantial, as it addresses a fundamental bottleneck in the rapidly expanding semiconductor industry. Companies that adopt this manufacturing approach could gain a competitive edge by producing chips with superior performance, reliability, and potentially higher yields, driving innovation and capturing significant market share in advanced electronics.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're building a towering skyscraper, and you need to run essential pipes and wires, like an elevator shaft, straight through every single floor. In the world of computer chips, we're doing something similar: stacking many layers of tiny circuits to make them more powerful and compact. These vertical connections are called 'through-holes.' The big problem is making sure these tiny 'pipes' connect perfectly and reliably to every single floor (or circuit layer) without breaking down, causing slowdowns, or being too difficult to manufacture. Existing methods often struggle with inconsistent connections, which can lead to chips that are less reliable, slower, or more expensive to produce due to manufacturing errors.\n\n### How Does It Work?\n\nThe patent \"Semiconductor Device and Method of Manufacturing the Same\" offers a clever solution that redesigns these crucial vertical connections. Instead of just drilling a straight hole and filling it, this invention proposes a more sophisticated approach. Think of it like this: after creating the vertical shaft through all the stacked circuit layers, they don't just insert a plain, straight wire. Instead, they form a special 'channel' inside the shaft that has a slight bulge or 'protrusion.' This protrusion acts like a better grip, ensuring a more solid and reliable contact with the surrounding layers. Then, on top of this 'grippy' channel, they add a 'capping' connection that's actually wider than the shaft itself. This wider cap acts like a strong, stable lid, making the entire connection incredibly robust, durable, and electrically efficient. It's like putting a sturdy, wide foundation on top of your elevator shaft to ensure it never wobbles.\n\n### Why Does This Matter?\n\nThis innovation is a big deal for several reasons. Firstly, it dramatically improves the **reliability** of semiconductor devices. Stronger, more consistent connections mean chips are less likely to fail, leading to longer-lasting products and reducing costly warranty issues for manufacturers. Secondly, it enables **higher density** chips. With more reliable vertical connections, chip designers can stack even more layers, packing greater processing power or memory capacity into the same tiny space. This is crucial for advancements in everything from your smartphone to powerful AI data centers. Lastly, it can streamline **manufacturing**. While sophisticated, the design's inherent robustness could potentially lead to higher production yields by making the critical connection steps more forgiving, ultimately lowering the cost of advanced chips.\n\n### What's Next?\n\nThis technology has immediate applications in areas like 3D NAND flash memory, which relies heavily on vertical stacking for massive data storage, and advanced logic processors. As the demand for artificial intelligence, 5G connectivity, and the Internet of Things continues to explode, the need for more compact, powerful, and reliable chips will only grow. This patent provides a foundational piece of the puzzle, potentially accelerating the development of next-generation hardware and influencing how future electronic devices are designed and manufactured for years to come. Companies that embrace this approach could gain a significant competitive advantage in the race for technological leadership.","technical_analysis":"The patent, \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853042), details a critical advancement in the fabrication of vertically integrated semiconductor devices, specifically focusing on the design and manufacturing of reliable through-hole contacts in multi-layered structures. This technical analysis delves into the architecture, implementation details, and performance characteristics implied by this innovative approach.\n\n**Technical Architecture and Core Innovation**\n\nThe fundamental architecture described involves a stacked structure, a common feature in modern 3D NAND flash memory and other vertically integrated circuits. This structure consists of alternately stacked conductive patterns (e.g., polysilicon, metal) and interlayer insulating patterns (e.g., silicon dioxide, silicon nitride). The innovation centers on the method of creating electrical connections through this stack via a through-hole.\n\nThe core technical breakthrough is the unique configuration of the conductive elements within this through-hole:\n\n1.  **Through-Hole Formation:** Standard lithography and anisotropic etching techniques would be employed to create a high aspect ratio (HAR) through-hole traversing the entire stacked structure. Precision in etching is crucial to maintain sidewall integrity and uniformity across multiple layers.\n2.  **Channel Pattern Protrusion:** A key aspect is the 'channel pattern formed in the through-hole and protruding from an inside of the through hole over the through-hole.' This suggests a selective material deposition or etching process. For instance, after initial through-hole etching, a conformal layer of channel material (e.g., polysilicon for a memory cell channel) could be deposited. Subsequently, a selective etching process might be used to define and shape this layer such that it 'protrudes' at specific points or along its entire length. This protrusion could be critical for enhancing the interface quality and increasing the effective contact area, mitigating issues like current crowding or high contact resistance often seen in simple conformal contacts.\n3.  **Capping Conductive Pattern:** Following the channel pattern formation, a 'capping conductive pattern' is formed. This pattern is designed to be in direct contact with the protruded channel pattern. Crucially, its specified 'width greater than the through-hole' implies a robust, perhaps self-aligned, contact. This wider cap could be achieved through several methods: a) a subsequent deposition and etch-back process that leaves a wider top contact, b) utilizing a sacrificial layer and selective deposition, or c) a chemical mechanical planarization (CMP) step that defines the top surface. The wider contact area at the top significantly improves electrical conductivity by reducing series resistance and enhancing current spreading. Furthermore, it adds mechanical stability to the overall structure, reducing stress concentrations and improving long-term reliability.\n\n**Implementation Details and Algorithm Specifics**\n\nThe manufacturing process for this device would involve a sequence of highly precise atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), lithography, and anisotropic etching steps. The formation of the protruding channel pattern likely involves advanced selective etching or deposition techniques that can control material growth or removal with atomic-level precision within the HAR through-hole. Algorithms for process control would need to account for aspect ratio dependent etching (ARDE) and deposition conformality challenges.\n\n**Integration Patterns and Performance Characteristics**\n\nThis technology is highly relevant for 3D NAND flash memory, where the through-hole often forms the vertical channel of the memory cell itself, surrounded by charge-trapping layers and gate electrodes. The improved contact structure would directly enhance the read/write performance and endurance of these memory cells. In 3D-ICs or advanced packaging, these through-holes could function as through-silicon vias (TSVs) connecting logic or memory dies. The robust contact improves signal integrity and reduces power consumption due to lower resistance.\n\n**Performance implications include:**\n*   **Reduced Contact Resistance:** The enlarged and robust contact interface reduces electrical resistance, leading to faster signal propagation and lower power dissipation.\n*   **Enhanced Reliability:** The mechanically stable and electrically superior contact minimizes failure mechanisms such as delamination, electromigration, and stress-induced cracking, extending device lifespan.\n*   **Higher Integration Density:** By enabling more reliable vertical connections, this innovation facilitates the stacking of a greater number of layers, pushing the boundaries of memory and logic density.\n*   **Improved Manufacturing Yields:** The design's inherent robustness might offer a wider process window, reducing the sensitivity to manufacturing variations and leading to higher yields.\n\nIn essence, the Semiconductor Device and Method of Manufacturing the Same patent provides a sophisticated solution to a fundamental scaling challenge in modern semiconductor manufacturing, promising to unlock new levels of performance and density for future electronic devices.","business_analysis":"The patent titled \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853042) represents a strategic innovation with substantial implications for the semiconductor industry, particularly in the burgeoning market for advanced 3D integrated circuits. This technology addresses critical manufacturing bottlenecks and offers significant competitive advantages for companies capable of adopting and optimizing its principles.\n\n**Market Opportunity Size**\n\nThe global semiconductor market is projected to continue its robust growth, driven by demand from AI, IoT, 5G, automotive, and data center sectors. Within this, the market for 3D NAND flash memory and other vertically integrated devices is a major segment. Improvements in stacking technology directly impact storage capacity, performance, and cost-per-bit, which are key drivers for this market. This patent's focus on reliable high-density vertical interconnects positions it to capture value in a market worth hundreds of billions of dollars, enabling further scaling that current technologies struggle to achieve. Any innovation that accelerates density scaling or improves reliability in 3D structures has a direct and significant impact on market share and profitability.\n\n**Competitive Advantages**\n\nAdopting the technology described in this patent offers several distinct competitive advantages:\n\n1.  **Superior Product Performance and Reliability:** The robust through-hole contact design with its protruding channel and wider capping pattern inherently leads to lower electrical resistance and greater mechanical stability. This translates into faster, more energy-efficient, and more durable chips, giving manufacturers a distinct edge in performance-critical applications.\n2.  **Higher Integration Density:** By enabling more reliable vertical interconnections, this invention allows for the stacking of additional layers without compromising signal integrity or structural stability. This directly facilitates the development of higher-capacity memory chips and more complex logic devices, offering a 'more-than-Moore' pathway for scaling.\n3.  **Improved Manufacturing Yields and Cost Efficiency:** While initial implementation may require process adjustments, the inherent robustness of the design could lead to a wider manufacturing process window. This can reduce defect rates associated with complex through-hole formation, resulting in higher yields and lower manufacturing costs per chip in the long run. This is a crucial factor in a highly capital-intensive industry.\n4.  **Strategic Positioning for Future Nodes:** This innovation provides a foundational improvement that can be leveraged across multiple future technology nodes. Companies adopting this approach will be better positioned to continue scaling their products and maintain a technological lead as the industry pushes towards even higher levels of integration.\n\n**Revenue Potential and Business Models**\n\nThe revenue potential for this innovation is multi-faceted. Semiconductor manufacturers can directly integrate this method into their fabrication processes, leading to premium products with higher margins. Licensing opportunities exist for the patent holder, allowing other foundries or IDMs to utilize the technology for their own product lines. Furthermore, companies specializing in advanced materials and equipment for semiconductor manufacturing could develop and sell specialized tools or precursors tailored to enable this specific through-hole formation method.\n\n**Strategic Positioning**\n\nCompanies that master the techniques described in the Semiconductor Device and Method of Manufacturing the Same patent will be strategically positioned at the forefront of 3D semiconductor technology. This enables them to differentiate their products in crowded markets, secure long-term contracts with major OEMs, and drive innovation in critical areas like AI hardware, high-performance computing, and enterprise storage. It allows for a move up the value chain by offering superior components.\n\n**ROI Projections**\n\nInvesting in the R&D and manufacturing capabilities required to implement this patent could yield significant ROI. The improvements in yield, reliability, and density directly translate to increased revenue per wafer and reduced warranty costs. For a leading semiconductor manufacturer, even a few percentage points improvement in yield across high-volume products can mean billions in additional revenue. The ability to launch higher-density products ahead of competitors also creates first-mover advantages and market leadership, driving substantial long-term returns on investment.","faqs":[{"answer":"The patent titled \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853042) describes a significant innovation in the field of semiconductor fabrication, specifically focusing on the construction of advanced 3D stacked devices. At its core, this invention presents a novel design for the electrical connections that run vertically through multiple layers of a computer chip, known as 'through-holes'.\n\nThis technology features a stacked structure made of alternating conductive and insulating patterns. The key breakthrough lies in the unique configuration within the through-hole: a channel pattern that protrudes from the inside of the hole, and a wider capping conductive pattern that makes contact with this protrusion. This design aims to create more reliable, robust, and efficient electrical pathways within multi-layered semiconductor devices.\n\nIt's an engineering solution to a fundamental problem in chip manufacturing, ensuring that as chips get more complex and layers are stacked higher, the crucial internal connections remain strong and perform optimally. This invention is pivotal for the continued advancement of high-density electronics.\n\nKeywords: Semiconductor device, 3D stacking, vertical integration, through-hole, channel pattern, capping conductive pattern, US-9853042.","question":"What is Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent works by redefining the internal structure of vertical electrical connections in stacked chips. Imagine a multi-story building where you need to run a central power line through every floor.\n\nFirst, the patent describes a base structure of alternately stacked conductive (like wires) and insulating (like walls) layers. A through-hole is then created, passing vertically through all these layers. The critical innovation is within this through-hole: a 'channel pattern' is formed that actively 'protrudes' or bulges from its inner surface. This protrusion ensures a more secure and expansive electrical contact with each layer it passes through, unlike a simple, thin lining.\n\nFollowing this, a 'capping conductive pattern' is created on top. This cap is designed to be wider than the through-hole itself and makes direct contact with the protruding channel. This wider cap provides a highly robust and low-resistance top connection, significantly enhancing the overall electrical and mechanical integrity of the vertical pathway. This combination ensures stable, high-performance connections essential for modern high-density chips.\n\nKeywords: Semiconductor fabrication, 3D architecture, through-hole design, protruding channel, capping pattern, electrical contact, reliability.","question":"How does Semiconductor Device and Method of Manufacturing the Same work?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent primarily solves the critical problem of creating reliable, high-density vertical interconnections in 3D stacked semiconductor devices. As chip manufacturers strive to pack more processing power and memory into smaller spaces, they resort to stacking layers of circuits vertically.\n\nThe challenge arises because the tiny electrical pathways, or 'through-holes,' that connect these layers often suffer from issues. Prior methods can lead to high electrical resistance, inconsistent contact, manufacturing defects like voids, and mechanical stress, all of which compromise chip performance and reliability. These issues limit how many layers can be stacked and how efficiently the chip can operate.\n\nThis invention provides a solution by introducing a robust through-hole design that ensures strong, low-resistance, and stable electrical connections across all stacked layers. By addressing these fundamental limitations, the patent enables higher integration densities and more reliable chip performance, paving the way for advanced electronics. It removes a significant bottleneck in the scaling of 3D chip architectures.\n\nKeywords: 3D stacking challenges, vertical interconnect problems, contact resistance, semiconductor reliability, manufacturing bottlenecks, chip density, US-9853042.","question":"What problem does Semiconductor Device and Method of Manufacturing the Same solve?"},{"answer":"The patent \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853042) lists no specific inventors or assignees in the provided data. This can occur for various reasons, such as the patent being assigned immediately to a corporation upon filing, or the information not being publicly detailed in all abstract summaries. Typically, such innovations are the result of extensive research and development efforts by teams of engineers and scientists within major semiconductor manufacturing companies or research institutions.\n\nThese teams are dedicated to overcoming the complex physics and engineering challenges inherent in advanced chip fabrication. The collaborative nature of modern patent development means that while individual names may not always be highlighted in summary data, the innovation itself is a testament to collective expertise in material science, electrical engineering, and process technology.\n\nKeywords: Patent inventors, semiconductor research, R&D, patent assignee, US-9853042, innovation teams.","question":"Who invented Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent offers several significant benefits for the semiconductor industry and, by extension, for consumers of electronic devices.\n\nFirstly, it leads to **enhanced reliability** of semiconductor devices. The robust design of the protruding channel and wider capping conductive pattern ensures stronger, more stable electrical contacts, reducing the likelihood of failures due to poor connection or mechanical stress. This means longer-lasting and more durable electronic products.\n\nSecondly, it enables **higher integration density**. By providing more reliable vertical interconnections, this technology allows chip designers to stack more layers of circuits. This translates directly into more powerful processors and higher-capacity memory chips within the same or even smaller physical footprints, driving miniaturization and performance.\n\nFinally, it contributes to **improved manufacturing yields and efficiency**. While the process is sophisticated, the inherent robustness of the design can create a wider process window, potentially reducing defects during fabrication. This can lead to higher yields (fewer wasted chips) and ultimately lower manufacturing costs for advanced semiconductor components. These benefits collectively accelerate technological progress and make advanced electronics more accessible.\n\nKeywords: Chip reliability, high-density integration, manufacturing yield, semiconductor performance, advanced electronics benefits, US-9853042.","question":"What are the key benefits of Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent distinguishes itself from prior art through its innovative design of vertical electrical contacts, particularly within the 'through-holes' of stacked semiconductor devices. Prior art typically involved simpler methods such as conformally lining a through-hole with conductive material or filling it with a basic cylindrical plug.\n\nHowever, these older methods often struggled with achieving uniform, low-resistance contact throughout the entire stack, leading to issues like voids, high contact resistance, and mechanical instability. The unique difference in this patent is twofold: it introduces a 'channel pattern' that *protrudes* from the inside of the through-hole, actively creating a more defined and larger contact interface. This is a departure from passive conformal layers.\n\nAdditionally, it utilizes a 'capping conductive pattern' that is *wider* than the through-hole itself, providing a more robust and stable top-level electrical connection. This wider cap enhances mechanical stability and offers a larger target for subsequent manufacturing steps, which is a significant improvement over contacts that are merely the same width as the hole. These combined features address the fundamental limitations of prior art, offering superior electrical performance and reliability.\n\nKeywords: Prior art comparison, vertical interconnects, through-hole innovation, semiconductor design differences, contact reliability, 3D chip technology, US-9853042.","question":"How is Semiconductor Device and Method of Manufacturing the Same different from prior art?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent is poised to significantly impact a wide range of industries that rely on advanced semiconductor technology. Its primary influence will be felt in sectors demanding high-density, high-performance, and reliable electronic components.\n\n**Memory Industry:** This is a major area of impact, particularly for 3D NAND flash memory, which extensively uses vertical stacking. The innovation will enable higher layer counts and greater storage capacities in SSDs, mobile devices, and data center storage solutions.\n\n**Computing and AI:** For high-performance computing (HPC), artificial intelligence (AI) accelerators, and general-purpose processors (CPUs/GPUs), improved vertical interconnects will facilitate more complex 3D-IC designs, leading to faster data transfer, lower power consumption, and more powerful processing capabilities.\n\n**Mobile and IoT:** The continuous demand for smaller, more powerful, and energy-efficient chips for smartphones, wearables, and Internet of Things (IoT) devices will directly benefit from the increased integration density and reliability this patent offers. This enables more sophisticated functionalities in compact form factors.\n\n**Automotive and Industrial:** In critical applications like autonomous vehicles, advanced driver-assistance systems (ADAS), and industrial control systems, the enhanced reliability of chips enabled by this technology is paramount, reducing failure rates and improving safety. Overall, any industry leveraging cutting-edge electronics will feel the positive ripple effect of this foundational semiconductor advancement.\n\nKeywords: Semiconductor industry impact, 3D NAND, AI hardware, high-performance computing, IoT devices, automotive electronics, US-9853042.","question":"What industries will Semiconductor Device and Method of Manufacturing the Same impact?"},{"answer":"The patent titled \"Semiconductor Device and Method of Manufacturing the Same\" has a filing date of **2014-06-25** and a publication date of **2017-12-26**. The filing date indicates when the initial patent application was submitted to the patent office, marking the official start of the patent protection process and establishing priority.\n\nThe publication date, on the other hand, is when the patent document was made publicly available by the patent office. This is often after a period of examination, where the patent office reviews the claims and novelty of the invention. The time between filing and publication can vary depending on the complexity of the invention and the patent office's workload.\n\nThis timeline shows that the innovation described in the Semiconductor Device and Method of Manufacturing the Same patent was conceived and formally documented several years ago, reflecting a forward-looking approach to addressing future challenges in semiconductor manufacturing. Its publication in late 2017 brought this critical design to public attention as a recognized advancement.\n\nKeywords: Patent filing date, patent publication date, US-9853042 timeline, semiconductor patent process, intellectual property dates, patent grant.","question":"When was Semiconductor Device and Method of Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device and Method of Manufacturing the Same patent are extensive and critical for the next generation of electronic products. This innovation is foundational for any technology requiring high-density, high-performance, and reliable semiconductor devices.\n\nKey commercial applications include:\n\n**High-Capacity Storage Solutions:** This patent is particularly relevant for 3D NAND flash memory, which is used in Solid State Drives (SSDs) for personal computers, servers, and enterprise storage. It enables the creation of higher-capacity and more reliable SSDs, crucial for data centers, cloud computing, and consumer electronics.\n\n**Advanced Processors (CPUs, GPUs, AI Accelerators):** In high-performance processors, the improved vertical interconnects can lead to faster communication between different processing units or stacked memory. This is vital for AI accelerators, graphics processing units in gaming and professional workstations, and central processing units in servers and personal computers, enhancing overall system performance.\n\n**Mobile and Edge Devices:** For smartphones, tablets, wearables, and various Internet of Things (IoT) devices, the ability to pack more functionality into a smaller, more reliable chip is paramount. This technology contributes to more powerful and energy-efficient mobile processors and memory, extending battery life and enabling sophisticated on-device AI capabilities.\n\n**Specialized Industrial and Automotive Electronics:** In demanding environments where reliability is non-negotiable, such as in automotive electronics (e.g., ADAS, infotainment systems) and industrial control systems, the enhanced durability and performance offered by this patent are highly valuable. The Semiconductor Device and Method of Manufacturing the Same underpins the continued evolution of these critical technologies.\n\nKeywords: Commercial applications, 3D NAND SSDs, AI accelerators, mobile processors, IoT devices, automotive electronics, enterprise storage, US-9853042.","question":"What are the commercial applications of Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same patent lays a robust foundation for numerous future developments in semiconductor technology. Its innovative through-hole design is a critical enabler for pushing the boundaries of 3D integration.\n\nOne key future development is the **continued increase in 3D NAND layer counts**. With more reliable vertical interconnections, manufacturers can confidently stack even more layers (e.g., 500+ layers) in flash memory, leading to exabyte-scale storage solutions with unprecedented density and potentially lower cost per bit. This will support the massive data growth driven by AI and cloud computing.\n\nAnother expectation is the **advancement of monolithic 3D-ICs**. This patent's principles could be extended to create truly monolithic 3D integrated circuits, where active device layers are fabricated sequentially. This would allow for extremely tight integration of logic and memory, leading to revolutionary performance and power efficiency in future processors. We could see highly specialized, vertically integrated chips for specific applications like neuromorphic computing or in-memory processing.\n\nFurthermore, there will likely be **refinements in manufacturing processes** to optimize the formation of the protruding channel and wider capping pattern. This could involve new materials, advanced atomic layer deposition (ALD) techniques, and highly selective etching processes that further enhance the precision, yield, and cost-effectiveness of this technology. The widespread adoption of the Semiconductor Device and Method of Manufacturing the Same will drive a new era of highly integrated, reliable, and powerful electronic devices across all sectors.\n\nKeywords: Future semiconductor developments, 3D NAND scaling, monolithic 3D-ICs, advanced manufacturing, new materials, process optimization, US-9853042.","question":"What are the future developments expected for Semiconductor Device and Method of Manufacturing the Same?"}],"topics":["semiconductor device","3D stacking","conductive patterns","interlayer insulating patterns","through-hole","relentless","drive","miniaturization"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Method of Manufacturing the Same - Patent US-9853042","description":"Discover the groundbreaking Semiconductor Device and Method of Manufacturing the Same patent. This innovation boosts 3D chip density & reliability with a novel through-hole design.","keywords":["semiconductor device","3D stacking","conductive patterns","interlayer insulating patterns","through-hole","channel pattern","capping conductive pattern","memory technology","vertical integration","semiconductor manufacturing","high-density chips","US-9853042","patent"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853042","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853042","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9853042). https://patentable.app/patents/US-9853042","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853042","json":"https://patentable.app/api/llm-context/US-9853042","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:34:53.100Z"}