{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853050","patent":{"patent_number":"US-9853050","title":"Semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-08-22T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"According to an embodiment, a semiconductor memory device includes a substrate, at least one stacked body, and a first insulating film. The stacked body includes a first end portion positioned at an end in at least one of a first direction and a second direction that crosses the first direction along a surface of the substrate, the plurality of electrode layers being formed into stairs in the first end portion, each of the plurality of electrode layers having a step in the first end portion. The first insulating film is provided on the substrate and includes first and second surfaces, the first and second surfaces surrounding the first end portion, the first surface being crossing a direction that the steps are formed, the second surface being positioned along the direction that the steps are formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing the same","description":"According to an embodiment, a semiconductor memory device includes a substrate, at least one stacked body, and a first insulating film. The stacked body includes a first end portion positioned at an e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853050","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853050","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing the same\" (US-9853050). https://patentable.app/patents/US-9853050","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853050","json":"https://patentable.app/api/llm-context/US-9853050","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:57.405Z"}