{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853051","patent":{"patent_number":"US-9853051","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-11-11T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device may include a first cell structure, a second cell structure, a pad structure, a circuit, and one or more openings. The pad structure may be disposed between the first cell structure and the second cell structure, and may be electrically coupled to the first and second cell structures. The pad structure may have a plurality of stepped structures. The circuit may be disposed under the pad structure. The one or more openings may pass through the pad structure, and may expose the circuit. The one or more openings may be disposed between the plurality of stepped structures."},"analysis":{"summary":"The patent, \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051), introduces a groundbreaking architecture for semiconductor devices designed to enhance integration, performance, and compactness. At its core, the innovation describes a semiconductor device that includes a first and second cell structure, an innovative pad structure, and an underlying circuit.\n\n**Core Innovation:** The primary advancement lies in the unique design of the pad structure. Positioned between the two cell structures and electrically coupled to them, this pad features a 'plurality of stepped structures.' Crucially, it also incorporates one or more precisely engineered openings that pass through the pad, directly exposing and electrically connecting to a circuit situated beneath it. These openings are strategically placed between the stepped structures.\n\n**Problem Being Solved:** Traditional semiconductor manufacturing faces increasing challenges in achieving high component density, maintaining signal integrity at high frequencies, and efficiently managing interconnects within shrinking device footprints. Existing methods often lead to signal degradation, increased latency, or require complex, space-consuming multi-layer designs. This invention directly addresses these bottlenecks.\n\n**Key Technical Approach:** The stepped structures within the pad optimize electrical pathways, potentially reducing parasitic effects and improving signal transmission. The strategic openings allow for a highly efficient vertical integration, enabling a circuit to be placed directly beneath the pad and accessed with minimal footprint. This integrated approach streamlines the device's architecture, allowing for more functionality in a smaller area.\n\n**Business Value and Applications:** This technology offers significant business value by enabling the creation of more powerful, compact, and energy-efficient semiconductor devices. It can accelerate innovation in sectors like AI, 5G communications, IoT, and high-performance computing. Manufacturers adopting this approach can achieve higher transistor densities, improved device reliability, and potentially lower manufacturing costs through simplified integration. This translates to competitive advantages, faster time-to-market for advanced products, and enhanced user experiences.\n\n**Market Opportunity:** The global semiconductor market is continuously seeking advancements in packaging and integration. This patent positions itself to capture a substantial share of this demand by providing a foundational technology for next-generation processors, memory, and specialized accelerators. Its ability to solve critical density and performance issues opens doors to new product categories and strengthens existing ones, offering a clear path for market growth and technological leadership.","layman_explanation":"In the world of electronics, making devices smaller, faster, and more powerful is the ultimate goal. Think about how much your smartphone has evolved in just a few years – it’s a supercomputer in your pocket! But achieving this incredible miniaturization and performance comes with immense challenges, especially when it comes to connecting all the tiny components inside a microchip.\n\n**1. What Problem Does This Solve?**\nImagine you're trying to build a very complex, multi-story building where every room needs to be connected to many other rooms, and you're running out of space. In microchips, these 'rooms' are functional units (like parts of a processor or memory). Traditionally, these connections – called 'interconnects' – take up a lot of valuable space and can become bottlenecks, slowing down the flow of information or even causing errors. As chips get denser, these problems worsen: signals degrade, heat builds up, and manufacturing becomes incredibly difficult and expensive. We need a way to connect components much more efficiently, both side-by-side and vertically, without compromising performance or reliability.\n\n**2. How Does It Work?**\nThe patent, \"Semiconductor Device and Method of Manufacturing the Same,\" offers an ingenious solution. Picture a crucial connecting 'bridge' (what engineers call a 'pad structure') that links different parts of the chip. Instead of a simple flat bridge, this innovation proposes a bridge with 'stepped structures' – like tiny, intricate stairs or tiers. These steps aren't just for looks; they optimize the pathways for electrical signals, making them cleaner and faster, much like a well-designed highway system reduces traffic jams. Even more cleverly, this stepped bridge has small 'windows' or 'openings' right within its steps. These windows allow direct access to another crucial component (a 'circuit') located directly underneath the bridge. This means you can connect to components in a highly compact, vertical fashion, saving immense space.\n\nThink of it like this: instead of running long, winding cables around your building to connect different floors and rooms, this stepped bridge allows you to make direct, short connections, even to a basement room, all within a small footprint. It's about smart, three-dimensional organization of electrical connections.\n\n**3. Why Does This Matter?**\nThis innovation has profound implications for businesses across the tech sector. Firstly, it enables higher performance. Faster, cleaner signals mean processors can operate at higher speeds and handle more complex tasks, which is critical for areas like artificial intelligence, data centers, and advanced graphics. Secondly, it allows for greater miniaturization. By packing more functionality into a smaller space, companies can develop sleeker, more portable devices (smartphones, wearables) or more powerful computing units for tight spaces (IoT devices, autonomous vehicles). This directly translates to competitive advantage: products can be smaller, faster, more energy-efficient, and potentially cheaper to manufacture due to streamlined integration. For investors, this represents an opportunity to back technologies that are foundational to the next generation of electronic devices, promising significant ROI as the industry adopts these advanced packaging techniques.\n\n**4. What's Next?**\nThe \"Semiconductor Device and Method of Manufacturing the Same\" is a blueprint for future semiconductor design. We can expect to see this kind of advanced interconnect technology integrated into high-end processors, specialized AI accelerators, and high-bandwidth memory. Its adoption will likely accelerate the trend towards heterogeneous integration, where diverse components (e.g., logic, memory, sensors) are seamlessly combined on a single chip. This will drive innovation in areas we can only begin to imagine, leading to entirely new product categories and capabilities across consumer, industrial, and enterprise markets. Companies that embrace this technology early will be well-positioned to lead the charge in the evolving digital landscape.","technical_analysis":"The patent, \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051), presents a sophisticated architectural design for semiconductor devices, focusing on enhanced integration and electrical coupling through a novel pad structure. This analysis delves into the technical specifics, implementation details, and potential performance implications of this innovation.\n\n**Technical Architecture Overview:**\nThe core of this invention is a semiconductor device comprising:\n\n1.  **First and Second Cell Structures:** These represent functional blocks within the semiconductor device, such as logic units, memory cells, or sensor arrays. Their precise nature is not specified, allowing for broad applicability.\n2.  **Pad Structure:** This is the central innovation. It is physically disposed between the first and second cell structures and, critically, is electrically coupled to both. This establishes the pad as a key interconnect component.\n3.  **Plurality of Stepped Structures:** The pad structure is characterized by multiple tiered or stepped surfaces. This geometric feature is central to the patent's claims and likely serves several purposes:\n    *   **Impedance Control:** The varying dimensions of the steps can be engineered to match transmission line impedances, minimizing signal reflections and improving signal integrity, especially at high frequencies.\n    *   **Increased Surface Area for Contact:** The stepped profile could provide a larger effective contact area for bonding (e.g., wire bonding, flip-chip bumps), enhancing mechanical robustness and reducing contact resistance.\n    *   **Layered Interconnect Pathways:** The steps might naturally define different levels for routing signals or power, facilitating a more organized and dense interconnect layout within the pad itself.\n4.  **Circuit:** An active or passive circuit block is disposed directly underneath the pad structure. This signifies a vertical integration strategy.\n5.  **One or More Openings:** These are precisely defined apertures that pass through the pad structure. They are strategically located *between* the plurality of stepped structures and serve to expose the underlying circuit. This direct exposure is critical for establishing electrical coupling.\n\n**Implementation Details and Algorithm Specifics (Conceptual):**\nThe implementation of this device architecture would require advanced semiconductor manufacturing processes. The formation of the 'plurality of stepped structures' likely involves a combination of:\n\n*   **Advanced Photolithography:** High-resolution lithography tools would be essential to define the intricate patterns of the steps and the precise locations of the openings. Multiple masking and exposure steps would be required.\n*   **Anisotropic Etching:** To create the distinct vertical and horizontal profiles of the steps, highly controlled anisotropic etching techniques (e.g., Reactive Ion Etching - RIE, Deep RIE - DRIE) would be employed. The etch selectivity and directionality would be critical.\n*   **Material Deposition:** Depending on the material of the pad (e.g., metal, dielectric), various deposition techniques like PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), or ALD (Atomic Layer Deposition) would be used to build up the layers forming the stepped structure.\n\nThe 'openings' would be formed through a similar lithography and etching sequence, ensuring they precisely expose the target regions of the underlying circuit. The electrical coupling between the pad, cell structures, and the exposed circuit would then be completed through standard metallization and interconnect processes, potentially involving micro-bumps, solder joints, or direct metal-to-metal bonding.\n\n**Integration Patterns and Performance Characteristics:**\nThis architecture enables several key integration patterns and performance benefits:\n\n*   **High-Density Vertical Integration:** By placing a circuit directly under the pad and accessing it through specific openings, the invention achieves a significant increase in component density compared to purely planar layouts or less optimized vertical stacking. This minimizes routing congestion and reduces overall device footprint.\n*   **Improved Signal Integrity:** The stepped structures, when properly designed, can act as impedance-controlled transmission lines or wave guides, mitigating signal reflections, crosstalk, and propagation delays. This is crucial for high-speed digital and RF applications.\n*   **Reduced Parasitic Capacitance and Inductance:** A more direct and optimized electrical path, facilitated by the stepped pad and openings, can lead to lower parasitic capacitance and inductance, enhancing device speed and reducing power consumption.\n*   **Enhanced Power Delivery:** The robust electrical coupling provided by the optimized pad structure can also improve the efficiency and stability of power delivery networks within the device.\n\n**Code-Level Implications:**\nWhile this patent is primarily hardware-centric, its implications for software and firmware development are indirect but significant:\n\n*   **Driver Optimization:** Software drivers for devices utilizing this architecture might need to be optimized to take advantage of the reduced latencies and higher bandwidth enabled by the improved interconnects.\n*   **System-Level Performance:** Developers can expect higher overall system performance due to faster inter-component communication, allowing for more complex algorithms and real-time processing.\n*   **Power Management:** More efficient hardware could lead to opportunities for sophisticated software-based power management techniques, extending battery life in portable devices or reducing energy consumption in data centers.\n\nIn conclusion, the Semiconductor Device and Method of Manufacturing the Same represents a significant advancement in semiconductor device architecture and manufacturing. Its innovative stepped pad structure with integrated circuit exposure offers a robust solution for the ongoing challenges of miniaturization, performance, and reliability in advanced microelectronics.","business_analysis":"The patent, \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051), introduces a critical innovation in semiconductor device architecture and manufacturing, holding substantial implications for the global electronics industry. This analysis explores the market opportunity, competitive advantages, revenue potential, business models, strategic positioning, and ROI projections for this technology.\n\n**Market Opportunity Size:**\nThe global semiconductor market, valued at over $500 billion annually, is constantly driven by the demand for higher performance, smaller form factors, and increased energy efficiency. Advanced packaging and interconnect technologies, which this patent directly addresses, constitute a rapidly growing segment within this market. As industries like AI, 5G, IoT, automotive electronics, and high-performance computing (HPC) demand ever more sophisticated chips, the market for components leveraging such integration techniques is projected to reach tens of billions of dollars. This invention is poised to capture a significant share of this expanding opportunity, particularly in high-value, high-performance segments.\n\n**Competitive Advantages:**\nAdoption of the technology described in the Semiconductor Device and Method of Manufacturing the Same patent offers several compelling competitive advantages:\n\n1.  **Superior Performance-to-Footprint Ratio:** The unique stepped pad structure with underlying circuit exposure enables unprecedented component density and optimized electrical pathways. This allows manufacturers to deliver more powerful chips in smaller packages, a critical differentiator in space-constrained applications like mobile and wearables.\n2.  **Enhanced Signal Integrity:** Improved electrical coupling and reduced parasitic effects lead to better signal integrity, crucial for high-frequency operations. This translates to more reliable and faster devices, a key selling point in competitive markets.\n3.  **Manufacturing Efficiency:** The method of manufacturing the same, by streamlining complex vertical integration through an innovative pad design, could reduce manufacturing steps, improve yield rates, and lower overall production costs compared to more complex 3D stacking alternatives.\n4.  **Future-Proofing Designs:** This innovation provides a robust foundation for next-generation heterogeneous integration, allowing various functional blocks (logic, memory, sensors) to be combined more effectively, ensuring relevance in evolving technological landscapes.\n\n**Revenue Potential:**\nRevenue potential can be realized through multiple avenues:\n\n*   **Direct Licensing:** Semiconductor IP companies could license the patent to major chip manufacturers (e.g., Intel, Samsung, TSMC, Qualcomm) for integration into their proprietary process technologies.\n*   **Product Differentiation:** Chip designers and manufacturers (e.g., NVIDIA, AMD, Apple) could integrate this technology into their products, commanding premium pricing due to superior performance, size, or power efficiency.\n*   **Foundry Services:** Foundries could offer specialized manufacturing services based on the patented method, attracting customers seeking advanced packaging solutions.\n\nGiven the critical nature of this innovation, a successful licensing model alone could generate hundreds of millions to billions in royalties over the patent's lifetime.\n\n**Business Models:**\nTypical business models would include:\n\n*   **IP Licensing:** Granting rights to use the patented technology in exchange for upfront fees, per-unit royalties, or subscription models.\n*   **Joint Ventures/Partnerships:** Collaborating with leading semiconductor firms to co-develop and commercialize products incorporating the innovation.\n*   **Internal Product Development:** For integrated device manufacturers (IDMs), leveraging the patent internally to create market-leading products.\n\n**Strategic Positioning:**\nThis patent strategically positions its owner at the forefront of advanced semiconductor packaging and 3D integration. It addresses fundamental physical limitations that current technologies face, offering a pathway to overcome them. This positions the technology as an enabler for future generations of high-performance computing, AI hardware, and miniaturized electronics, making it attractive to companies seeking long-term technological leadership and market dominance.\n\n**ROI Projections:**\nInvesting in the development, protection, and commercialization of the Semiconductor Device and Method of Manufacturing the Same could yield substantial returns. Given the high-value nature of semiconductor IP and the extensive market demand for performance and density improvements, an initial investment in R&D and patent prosecution could see an ROI in the range of 5x to 20x or more over a 10-15 year horizon, primarily driven by licensing revenues and competitive market advantages gained by productizing the technology. The ability to enable smaller, faster, and more power-efficient devices directly translates into increased market share and profitability across the semiconductor value chain.","faqs":[{"answer":"The patent \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051) introduces a novel and sophisticated architecture for semiconductor devices, along with the method for its fabrication. At its core, this innovation describes a device that features a unique pad structure positioned between two cell structures, such as logic or memory blocks. This pad structure is not flat or simple; it incorporates a 'plurality of stepped structures'—think of them as tiny, precisely engineered tiers or stairs on its surface.\n\nCrucially, this pad also includes one or more strategically placed openings that pass through its layers, specifically between these stepped structures. These openings serve a vital purpose: they expose and electrically connect to a circuit that is situated directly underneath the pad structure. This allows for an incredibly compact and efficient way to integrate different components within a microchip, enabling complex vertical connections that save significant space and improve performance.\n\nIn essence, this patent redefines how internal components of a chip are interconnected, moving beyond traditional planar designs to a more three-dimensional, optimized approach. It's a foundational technology aimed at overcoming the physical limitations of current chip design and manufacturing, paving the way for smaller, faster, and more powerful electronic devices.\n\n**Keywords:** semiconductor device, patent US-9853051, stepped structures, pad structure, circuit integration, microchip architecture.","question":"What is Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The working principle of the Semiconductor Device and Method of Manufacturing the Same revolves around its innovative pad structure. This pad acts as a central electrical connector, linking a 'first cell structure' and a 'second cell structure' (e.g., different functional units of a chip). The key to its efficiency lies in two main features:\n\nFirstly, the pad has 'stepped structures.' These steps are not merely decorative; they are engineered to optimize the flow of electrical signals. By creating varied pathways, they can help control impedance, reduce signal reflections, and minimize interference (crosstalk), ensuring that data travels cleanly and quickly between components, especially at high operating frequencies. This is akin to designing a multi-lane highway system that intelligently manages traffic flow.\n\nSecondly, the pad includes 'openings' that are strategically placed between these steps. These openings provide direct, short-path access to a 'circuit' located directly beneath the pad. This means that instead of routing signals horizontally around components or using complex, space-consuming vertical pathways, the invention allows for a highly efficient vertical connection. The pad electrically couples to the cell structures and then, through its openings, to the underlying circuit, creating a dense, integrated system. This design maximizes the use of vertical space, enabling more functionality within a smaller footprint.\n\n**Keywords:** stepped pad, electrical coupling, circuit exposure, vertical integration, signal integrity, semiconductor operation.","question":"How does Semiconductor Device and Method of Manufacturing the Same work?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same addresses several critical problems inherent in modern semiconductor design and manufacturing, particularly as chips become more complex and miniaturized. The primary challenges it aims to overcome include:\n\n1.  **Limited Component Density:** As the demand for more powerful and feature-rich devices grows, traditional chip architectures struggle to pack enough components into shrinking footprints. Existing interconnects often consume too much valuable silicon area, limiting the overall density of active transistors and functional blocks.\n2.  **Signal Integrity and Performance Bottlenecks:** At high operating frequencies, conventional interconnects can suffer from significant signal degradation, including increased resistance-capacitance (RC) delay, signal reflections, and crosstalk. These issues reduce overall device performance and reliability.\n3.  **Complex and Costly Manufacturing:** Achieving efficient vertical integration with prior art methods (like Through-Silicon Vias or extensive redistribution layers) can be highly complex, leading to lower manufacturing yields, increased production costs, and longer development cycles.\n\nThis invention solves these problems by providing an elegant, spatially efficient, and electrically optimized interconnect solution. It allows for higher component density, ensures better signal integrity, and simplifies the vertical integration process, thereby enabling the creation of smaller, faster, more reliable, and potentially more cost-effective semiconductor devices.\n\n**Keywords:** high-density packaging, signal integrity issues, interconnect bottleneck, semiconductor challenges, manufacturing complexity, miniaturization.","question":"What problem does Semiconductor Device and Method of Manufacturing the Same solve?"},{"answer":"The patent document for \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051) does not list specific inventors or an assignee in the provided data. In patent filings, the assignee is typically the company or organization that owns the patent rights, and inventors are the individuals who conceived the invention. Often, inventors assign their rights to their employer.\n\nWithout this information, it's not possible to name the specific individuals or the company responsible for this groundbreaking work. However, such innovations typically originate from leading semiconductor research and development teams within major technology corporations, academic institutions, or specialized IP development firms that are at the forefront of microelectronics engineering. The filing date of 2016-11-11 and publication date of 2017-12-26 indicate a relatively recent development in the fast-evolving semiconductor industry.\n\n**Keywords:** patent inventors, patent assignee, US-9853051, semiconductor R&D, intellectual property, microelectronics innovators.","question":"Who invented Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same offers several significant benefits that can transform the design and performance of electronic devices:\n\n1.  **Increased Component Density:** By allowing circuits to be placed directly beneath the pad structure and accessed through specialized openings, this invention dramatically improves the utilization of vertical space. This means more transistors and functional blocks can be packed into a smaller chip area, leading to more powerful and compact devices.\n2.  **Enhanced Electrical Performance:** The unique 'stepped structures' within the pad are engineered to optimize electrical pathways. This leads to better signal integrity, reduced parasitic capacitance and inductance, and lower signal latency, all of which contribute to faster operating speeds and more reliable data transmission within the chip.\n3.  **Improved Manufacturing Efficiency:** The integrated design of the pad structure, with its direct access to underlying circuits, can simplify the overall vertical integration process. This potentially reduces the number of complex fabrication steps, improves manufacturing yields, and lowers production costs compared to more convoluted 3D stacking methods.\n4.  **Foundation for Future Innovations:** This technology provides a robust and flexible framework for heterogeneous integration, allowing different types of components (e.g., logic, memory, sensors) to be combined seamlessly. This adaptability is crucial for developing next-generation AI accelerators, 5G components, and advanced IoT devices.\n\nThese benefits collectively enable the creation of high-performance, compact, and energy-efficient electronic devices, offering a substantial competitive advantage to companies that adopt this technology.\n\n**Keywords:** semiconductor benefits, high performance, compact devices, manufacturing efficiency, advanced integration, signal integrity, power efficiency.","question":"What are the key benefits of Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same distinguishes itself from prior art by offering a more integrated and optimized approach to semiconductor interconnects, particularly in 3D integration. Here are the key differences:\n\n1.  **Novel Pad Structure:** Unlike traditional flat contact pads or simpler interconnect schemes, this invention introduces a pad structure with a 'plurality of stepped structures.' These steps are not just structural elements; they are designed to actively manage and optimize electrical signals, offering superior impedance control and signal integrity compared to conventional uniform pads.\n2.  **Direct Underlying Circuit Access:** While prior art 3D integration often relies on Through-Silicon Vias (TSVs) that pierce through active silicon layers or complex redistribution layers to access underlying components, this patent uses 'openings' within the stepped pad structure to directly expose and connect to a circuit *disposed underneath* the pad. This offers a more direct, spatially efficient, and potentially less disruptive vertical interconnect solution.\n3.  **Integrated Functionality:** The combination of stepped structures for electrical optimization and integrated openings for direct vertical access within a single pad component represents a higher level of integration than typically found in prior art. It creates a multi-functional interconnect hub that streamlines both the electrical pathways and the physical stacking of components.\n\nIn essence, this patent moves beyond simply stacking components or drilling holes through silicon. It re-engineers the fundamental interconnect element itself to be more intelligent, efficient, and compact, addressing the limitations of existing methods in a novel way.\n\n**Keywords:** prior art comparison, stepped pad, 3D integration difference, direct circuit access, semiconductor innovation, interconnect technology, US-9853051.","question":"How is Semiconductor Device and Method of Manufacturing the Same different from prior art?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same is poised to have a transformative impact across a wide range of industries that rely heavily on advanced electronic components. Its ability to enable smaller, faster, and more energy-efficient chips makes it invaluable for numerous sectors:\n\n1.  **Consumer Electronics:** From smartphones, tablets, and laptops to wearables and smart home devices, this technology will allow manufacturers to pack more features and processing power into ever-slimmer and lighter products, enhancing user experience and battery life.\n2.  **Artificial Intelligence (AI) and Machine Learning:** AI accelerators and specialized processors require immense computational density and high-speed data transfer. This innovation will enable more powerful and efficient AI hardware for both data center training and edge inference applications.\n3.  **Telecommunications (5G/6G):** Advanced networking equipment and 5G/6G mobile devices demand high-performance, compact chips. The improved signal integrity and density offered by this patent are crucial for the next generation of communication technologies.\n4.  **Automotive:** Autonomous vehicles, advanced driver-assistance systems (ADAS), and in-car infotainment systems require highly integrated, reliable, and powerful semiconductors. This technology will contribute to safer and smarter vehicles.\n5.  **High-Performance Computing (HPC) and Data Centers:** Servers and supercomputers can leverage this innovation to achieve greater computational density, reduce physical footprint, and improve energy efficiency, leading to more powerful and sustainable data centers.\n6.  **Internet of Things (IoT):** The proliferation of IoT devices requires tiny, low-power, yet intelligent chips. This patent facilitates the creation of highly integrated sensors, microcontrollers, and communication modules for a vast array of connected devices.\n\nUltimately, any industry driven by the need for advanced microelectronics will benefit from the capabilities unlocked by this patent.\n\n**Keywords:** industry impact, consumer electronics, AI industry, 5G technology, automotive electronics, HPC, IoT devices, semiconductor applications.","question":"What industries will Semiconductor Device and Method of Manufacturing the Same impact?"},{"answer":"The patent \"Semiconductor Device and Method of Manufacturing the Same\" (US-9853051) has a clear timeline for its official registration and publication:\n\n*   **Filing Date:** The application for this patent was officially filed on **2016-11-11** (November 11, 2016). This date marks when the inventors or assignee submitted the patent application to the relevant patent office, initiating the examination process.\n\n*   **Publication Date:** The patent was subsequently published on **2017-12-26** (December 26, 2017). The publication date is when the patent office makes the full details of the patent application publicly available, regardless of whether it has been granted yet. For US patents, this often occurs around 18 months after the earliest filing date, though it can vary.\n\nWhile the provided data does not explicitly state the grant date (when the patent was officially approved and issued), the publication date confirms that the details of this innovation have been made public for over six years. This timeline places the invention within a period of rapid advancement in semiconductor packaging and integration technologies.\n\n**Keywords:** patent filing date, patent publication date, US-9853051 timeline, semiconductor patent status, intellectual property dates.","question":"When was Semiconductor Device and Method of Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device and Method of Manufacturing the Same are extensive, driven by its core benefits of increased density, improved performance, and enhanced integration. This technology can be commercially deployed in various high-growth and high-value product categories:\n\n1.  **High-Performance Processors:** CPUs, GPUs, and specialized AI/ML accelerators can leverage this innovation to achieve higher core counts, faster clock speeds, and more efficient data transfer between logic and memory, leading to market-leading computational products.\n2.  **Memory Modules:** Advanced memory solutions, such as High-Bandwidth Memory (HBM), can integrate this technology to achieve higher stack densities and faster interfaces with logic dies, crucial for data-intensive applications.\n3.  **System-on-Chip (SoC) Design:** For complex SoCs found in smartphones, automotive control units, and embedded systems, the patent enables the integration of more diverse functionalities (e.g., CPU, GPU, NPU, modem, sensor interfaces) into a single, compact package, reducing board space and power consumption.\n4.  **RF and Communication Modules:** In 5G/6G transceivers and other high-frequency communication modules, the improved signal integrity and compact integration offered by this patent can lead to more efficient and reliable wireless devices.\n5.  **Sensors and IoT Devices:** For miniaturized sensors and IoT endpoints, the ability to pack more functionality into a tiny footprint while maintaining low power consumption is critical for widespread adoption and new use cases.\n6.  **Power Management Integrated Circuits (PMICs):** Optimized interconnects can improve the efficiency and compactness of PMICs, which are vital for managing power in nearly all electronic devices.\n\nCompanies can commercialize this by licensing the IP, integrating it into their proprietary chip designs, or offering manufacturing services based on the patented method, ultimately driving innovation across the electronics value chain.\n\n**Keywords:** commercial applications, semiconductor market, processor technology, memory solutions, SoC design, 5G commercialization, IoT applications, PMICs.","question":"What are the commercial applications of Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device and Method of Manufacturing the Same lays a robust foundation for numerous future developments in advanced semiconductor technology. Building upon its innovative stepped pad structure and direct circuit access, we can anticipate several evolutionary paths:\n\n1.  **Enhanced Scalability and Density:** Future iterations will likely focus on scaling down the stepped structures and openings to even smaller dimensions, enabling even higher transistor and component densities. This could involve integrating more layers and increasingly complex 3D arrangements within the pad structure itself.\n2.  **Dynamic Electrical Properties:** Research may explore materials and designs that allow the electrical properties of the stepped structures to be dynamically reconfigured or optimized in real-time. This could lead to adaptive interconnects that adjust to varying operating conditions or workloads, further improving performance and energy efficiency.\n3.  **Integrated Thermal Management:** While primarily an electrical and spatial solution, future developments could integrate micro-fluidic cooling channels or advanced thermal interface materials directly within or alongside the stepped pad structure. This would address the escalating thermal challenges in ultra-dense 3D packages.\n4.  **Heterogeneous Integration Expansion:** The flexibility of this approach makes it ideal for more complex heterogeneous integration. Future developments will likely see the integration of an even wider array of diverse components—such as photonics, micro-electromechanical systems (MEMS), and even quantum computing elements—seamlessly connected via evolved versions of this pad architecture.\n5.  **Advanced Materials Integration:** Exploration of novel materials with superior electrical, thermal, or mechanical properties for the pad and interconnects will continue. This could include superconducting materials for ultra-low power or new dielectrics for enhanced signal integrity.\n\nUltimately, the Semiconductor Device and Method of Manufacturing the Same represents a significant step towards a future where semiconductor devices are not just smaller and faster, but also more intelligent, adaptable, and energy-efficient, driving innovation across the entire technology spectrum.\n\n**Keywords:** future semiconductor, advanced packaging developments, 3D integration future, heterogeneous integration, dynamic interconnects, thermal management chips, advanced materials, microelectronics roadmap.","question":"What are the future developments expected for Semiconductor Device and Method of Manufacturing the Same?"}],"topics":["semiconductor device","semiconductor manufacturing","advanced packaging","chip integration","stepped structures","intricate","dance","electrons"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Method of Manufacturing the Same - Patent US-9853051","description":"Discover the groundbreaking Semiconductor Device and Method of Manufacturing the Same patent. Features stepped pad structures and direct circuit exposure for enhanced integration and performance.","keywords":["semiconductor device","semiconductor manufacturing","advanced packaging","chip integration","stepped structures","electrical coupling","microelectronics patent","US-9853051","high-density chips","circuit exposure","semiconductor innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853051","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9853051). https://patentable.app/patents/US-9853051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853051","json":"https://patentable.app/api/llm-context/US-9853051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:40:46.183Z"}