{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853052","patent":{"patent_number":"US-9853052","title":"Semiconductor device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2017-01-20T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"According to one embodiment, the circuit portion includes a transistor provided at a region separated from the first stacked portion in the substrate. The second stacked portion is provided above the circuit portion. The second stacked portion includes a plurality of first layers and a plurality of second layers. The first layers and the second layers include a first layer and a second layer stacked alternately. An insulating layer is provided above the circuit portion and provided above the substrate between the first stacked portion and the second stacked portion. A height of an uppermost first layer of the second stacked portion from a surface of the substrate is substantially equal to a height of an uppermost electrode layer of the first stacked portion from the surface of the substrate, or is higher than the height of the uppermost electrode layer."},"analysis":{"summary":"The patent titled \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) introduces a novel and highly efficient architecture for semiconductor devices, focusing on advanced vertical integration and optimized component stacking. The core innovation lies in its meticulous design, which aims to enhance device density and performance while addressing the limitations of traditional planar scaling.\n\nThe primary problem this invention solves is the increasing difficulty of integrating complex circuit elements, such as transistors, with multiple layered structures in a compact and high-performing manner. Existing methods often struggle with precise alignment, signal integrity, and efficient power delivery in vertically integrated systems.\n\nTechnically, this patent describes a semiconductor device where a circuit portion, containing a transistor, is strategically located within the substrate, separated from a 'first stacked portion.' Crucially, a 'second stacked portion,' composed of alternating first and second layers, is positioned directly above the circuit portion. An insulating layer is strategically placed above the circuit portion and between the two stacked portions for electrical isolation. A key aspect is the precise height management: the uppermost first layer of the second stacked portion is designed to be substantially equal to or higher than the uppermost electrode layer of the first stacked portion, relative to the substrate surface. This ensures optimal inter-layer connectivity and minimizes performance degradation.\n\nFrom a business perspective, this innovation unlocks significant market opportunities in high-performance computing, artificial intelligence, mobile devices, and IoT. By enabling denser, faster, and more energy-efficient chips, it provides a competitive advantage for manufacturers and product developers. This technology can lead to smaller form factors, extended battery life, and enhanced processing capabilities, driving demand across various sectors. The market opportunity is substantial, as the semiconductor industry continually seeks solutions for scaling beyond traditional limits, and this patent offers a viable pathway for advanced 3D integration.","layman_explanation":"### What Problem Does This Solve?\n\nImagine you're trying to build the most incredible city ever, but you only have a very small piece of land. Traditionally, you'd spread out your buildings side-by-side. But eventually, you run out of space, and your city can't grow any bigger or more complex. This is a bit like the challenge facing the semiconductor industry: how to make computer chips more powerful and functional when the physical space on the silicon wafer is limited.\n\nFor decades, chip makers have shrunk components, but that's getting harder and more expensive. The real business problem is that without new ways to pack more functionality into a small area, the pace of innovation for devices like smartphones, AI processors, and IoT gadgets will slow down. Existing solutions for stacking components vertically often introduce new problems, like making manufacturing too complex, causing components to interfere with each other, or making the chip less reliable. We need a way to build 'up' that's efficient, reliable, and maintains high performance.\n\n### How Does It Work?\n\nThe patent titled \"Semiconductor Device and Method for Manufacturing Same\" offers a sophisticated solution to this 'space crunch' by introducing a smart way to build chips in three dimensions. Instead of just spreading components out, this innovation focuses on precise vertical stacking.\n\nThink of it like this: on a tiny piece of land (the semiconductor substrate), you first build a crucial foundation, like a power station (the 'circuit portion' with a 'transistor'). This power station is important but kept a little separate from other initial structures on the land. Then, directly on top of this power station, you start building a very special high-rise building (the 'second stacked portion'). This high-rise isn't just one type of floor; it has alternating types of floors, like a 'first layer' then a 'second layer,' then a 'first layer' again, all stacked neatly. These alternating layers allow for complex functions or memory to be integrated directly above the processing unit.\n\nTo prevent any electrical 'noise' or interference between these stacked components, a special invisible shield (an 'insulating layer') is placed strategically above the power station and between different sections of the land. The genius part is that the height of the very top floor of your new high-rise is made to be exactly the same height as, or even a bit taller than, the top of other important initial structures on your land. This precise height matching is crucial because it ensures that all the tiny electrical connections (like roads connecting buildings) can be built perfectly, making the whole city (the chip) work faster and more reliably.\n\n### Why Does This Matter?\n\nThis innovation matters immensely for several business reasons. Firstly, it allows for significantly higher component density, meaning more processing power and memory can be packed into a smaller physical space. This directly translates to smaller, lighter, and more powerful electronic devices, which is a key driver for consumer demand and market differentiation. Imagine smartphones with even more capabilities in the same form factor, or tiny IoT sensors with powerful on-board AI.\n\nSecondly, by optimizing vertical connections, this technology can lead to faster data transfer between different parts of the chip and lower power consumption. For businesses, this means more energy-efficient data centers, longer battery life for mobile devices, and more capable edge computing solutions. These improvements offer a strong competitive advantage in markets where performance-per-watt and form factor are critical. It also opens up new possibilities for designing specialized chips for AI, virtual reality, and autonomous vehicles, where traditional chip architectures are becoming bottlenecks.\n\n### What's Next?\n\nThe \"Semiconductor Device and Method for Manufacturing Same\" patent provides a foundational technology for the next wave of semiconductor innovation. We can expect to see this approach integrated into future generations of processors, memory chips, and system-on-chip (SoC) solutions. Its adoption will likely accelerate the development of true 3D integrated circuits, leading to entirely new product categories and capabilities across various industries.\n\nFor investors, this patent highlights a critical area for strategic investment in companies focused on advanced packaging, materials science, and chip fabrication. Early adoption and successful implementation of this technology could position companies as leaders in the high-growth sectors of AI hardware, high-performance computing, and ubiquitous IoT. The market adoption timeline will depend on manufacturing scalability, but the fundamental advantages suggest a strong trajectory for this approach in the coming years.","technical_analysis":"The patent \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) presents a sophisticated architecture for integrated circuits, primarily focused on optimizing vertical device integration. This technical analysis will dissect the core components, their interrelationships, and the underlying principles that contribute to the invention's performance advantages.\n\n**Technical Architecture and Layering Strategy:**\nAt the heart of this innovation is a multi-layered semiconductor device built upon a substrate. The architecture begins with a 'circuit portion' embedded within this substrate. This circuit portion is fundamental, containing at least one transistor—the basic building block of digital electronics. Importantly, this circuit portion is situated in a region separated from a 'first stacked portion' elsewhere on the substrate. The separation implies a modularity or a specific functional partitioning of the device.\n\nThe crucial aspect of this patent is the 'second stacked portion,' which is strategically positioned *above* the circuit portion. This vertical arrangement is key to achieving higher integration density. The second stacked portion is not monolithic; instead, it comprises a plurality of 'first layers' and a plurality of 'second layers' that are stacked alternately. This alternating layer structure is a common technique in advanced memory (e.g., 3D NAND) and logic, often used to create complex three-dimensional gate structures or memory cells with high aspect ratios. The precise material composition and thickness of these first and second layers (e.g., conductive vs. insulating, or different semiconductor materials) would dictate the specific functionality being implemented in this stacked region, such as memory arrays, logic gates, or interconnect layers.\n\n**Implementation Details and Interconnect Optimization:**\nAn 'insulating layer' plays a critical role in the device's integrity and electrical performance. It is positioned above the circuit portion and, significantly, between the first stacked portion and the second stacked portion. This insulating layer serves to prevent unwanted electrical shorting, reduce parasitic capacitance, and minimize crosstalk between the densely packed components, all of which are paramount for high-frequency operation and signal integrity in advanced integrated circuits.\n\nThe most technically innovative aspect highlighted in the abstract is the precise vertical height management. The patent specifies that \"a height of an uppermost first layer of the second stacked portion from a surface of the substrate is substantially equal to a height of an uppermost electrode layer of the first stacked portion from the surface of the substrate, or is higher than the height of the uppermost electrode layer.\" This seemingly simple constraint addresses a major challenge in 3D integration: ensuring consistent and reliable inter-layer connections. In manufacturing, variations in layer heights can lead to non-planar surfaces, making subsequent lithography and deposition steps extremely difficult and prone to defects. By mandating this height congruence or controlled elevation, the invention facilitates:\n\n1.  **Improved Planarization:** Easier Chemical Mechanical Planarization (CMP) processes, leading to smoother surfaces for subsequent layer deposition.\n2.  **Optimized Interconnects:** Shorter and more uniform vertical interconnects (e.g., vias, Through-Silicon Vias - TSVs), reducing resistance and capacitance, thus enhancing signal speed and reducing power consumption.\n3.  **Enhanced Device Yield:** Reduced manufacturing variability and defects associated with non-uniform layer thicknesses or misalignments.\n\n**Performance Characteristics and Code-Level Implications:**\nWhile the patent doesn't directly describe algorithms or code, its architectural implications are profound for hardware-software co-design. For developers, this technology means:\n\n*   **Higher Density and Performance:** The ability to integrate more transistors and memory cells per unit area, leading to more powerful processors and larger on-chip memory. This directly impacts the performance of computationally intensive applications like AI/ML, scientific simulations, and complex graphics.\n*   **Reduced Latency:** Shorter physical distances between logic and memory (due to vertical stacking) translate to reduced data access latency, which is critical for real-time applications and high-throughput data processing.\n*   **Power Efficiency:** Optimized interconnects and potentially reduced global wire lengths contribute to lower power dissipation, enabling more energy-efficient computing platforms, especially for edge devices and mobile applications.\n\nThis patent lays a foundational framework for future 3D ICs, enabling architects to design chips with heterogeneous integration strategies where different functional blocks (e.g., CPU, GPU, NPU, HBM) can be stacked and interconnected with unprecedented efficiency. It pushes the boundaries of what is possible in semiconductor manufacturing, paving the way for systems with significantly improved performance-per-watt metrics.","business_analysis":"The patent \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) represents a strategic advancement in semiconductor manufacturing, with significant implications for market dynamics, competitive landscapes, and revenue potential across the electronics industry. This innovation addresses fundamental challenges in chip design, offering substantial business value.\n\n**Market Opportunity Size:**\nThe global semiconductor market is a multi-trillion-dollar industry, with continuous demand for more powerful, smaller, and energy-efficient chips. This patent directly targets the core of this demand by enabling higher integration densities and improved performance. Key segments poised for impact include:\n\n*   **High-Performance Computing (HPC) & Data Centers:** Demand for faster processors and memory to handle big data, AI, and complex simulations. This technology can reduce latency and increase throughput.\n*   **Artificial Intelligence (AI) & Machine Learning (ML) Accelerators:** AI workloads are memory-bound. Vertical integration can bring compute closer to memory, drastically improving efficiency.\n*   **Mobile & Edge Devices:** The constant drive for thinner, lighter devices with longer battery life and enhanced capabilities. This innovation allows more functionality in a smaller footprint.\n*   **IoT & Wearables:** Miniaturization, low power consumption, and integrated functionality are critical for widespread adoption.\n\nThe potential market opportunity for chips leveraging this vertical integration approach is estimated to be in the hundreds of billions of dollars, as it can enhance existing product lines and enable entirely new categories of devices.\n\n**Competitive Advantages:**\nCompanies that adopt or license the technology described in this patent could gain significant competitive advantages:\n\n1.  **Performance Leadership:** Deliver chips with superior speed, lower power consumption, and higher bandwidth compared to competitors relying on older planar or less optimized 3D integration techniques.\n2.  **Miniaturization:** Create smaller, more compact devices, which is a key differentiator in consumer electronics and embedded systems.\n3.  **Cost Efficiency (Long-Term):** While initial R&D and manufacturing setup may be high, improved yields from precise stacking and reduced component count (due to integration) could lead to lower per-unit costs at scale.\n4.  **IP Protection:** Owning or licensing this core technology provides a strong intellectual property barrier, solidifying market position.\n\n**Revenue Potential and Business Models:**\nRevenue generation can come from multiple avenues:\n\n*   **Direct Chip Sales:** Manufacturers incorporating this design into their processors, memory, or integrated modules.\n*   **Licensing:** Patent holders can license the technology to other semiconductor companies for royalties.\n*   **Foundry Services:** Foundries developing processes to implement this patent's methods can offer advanced manufacturing services.\n*   **New Product Categories:** Enabling new types of devices or functionalities that were previously impossible or impractical due to size/power constraints.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves as leaders in advanced packaging and 3D integration. It moves beyond incremental improvements, offering a foundational shift that can redefine product roadmaps. Companies leveraging this innovation can differentiate themselves by offering 'system-on-package' or 'system-on-chip' solutions with unparalleled integration levels, attracting premium pricing and market share.\n\n**ROI Projections:**\nInvestment in R&D and manufacturing capabilities to implement this patent's methods is likely to yield substantial returns. The improved performance and efficiency translate directly into higher-value products, increased market share, and potentially new revenue streams. For instance, a 10-20% improvement in power efficiency or a 5-10% reduction in form factor can justify significant R&D expenditures in competitive markets like mobile and AI, with ROI realized through expanded market reach and higher average selling prices (ASPs). The ability to extend the effective lifespan of Moore's Law through vertical scaling will ensure sustained innovation and profitability for decades to come.","faqs":[{"answer":"The patent titled \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) describes a novel and highly efficient architecture for semiconductor devices, along with the method for its fabrication. At its core, this innovation focuses on advanced vertical integration, which means stacking different components of a microchip on top of each other rather than spreading them out horizontally. This approach is critical for creating more powerful, compact, and energy-efficient electronic devices as traditional planar scaling methods reach their physical limits.\n\nSpecifically, this patent details a structure where a circuit portion, containing a transistor, is placed on the substrate. A 'second stacked portion,' composed of alternating layers, is then built directly above this circuit portion. An insulating layer ensures electrical isolation between components, and a key feature is the precise control over the height of these stacked layers, ensuring optimal interconnections. This meticulous design allows for unprecedented density and performance within the device.\n\nThis invention is a significant step forward in chip design, offering solutions to challenges in manufacturing and performance that have plagued the semiconductor industry. It provides a blueprint for how future integrated circuits can achieve higher levels of complexity and efficiency by intelligently utilizing the vertical dimension. Understanding this patent is key to grasping the trajectory of modern semiconductor manufacturing and device design, particularly for high-performance applications.","question":"What is Semiconductor Device and Method for Manufacturing Same?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent works by employing a sophisticated vertical stacking strategy to integrate various components of a semiconductor device. Here's a breakdown of its operational principles:\n\nFirst, a 'circuit portion,' which includes a fundamental transistor, is fabricated within the semiconductor substrate. This forms the base active area of the device. Importantly, this circuit portion is designed to be in a region separate from a 'first stacked portion' that might also be present on the substrate. This separation allows for optimized foundational design.\n\nNext, a 'second stacked portion' is constructed directly above this circuit portion. This second portion is not a simple block; rather, it's intricately composed of multiple 'first layers' and 'second layers' that are stacked alternately. This alternating layered structure is crucial for defining specific electrical characteristics or functionalities, such as creating memory cells or additional logic gates in a compact vertical space. The choice of materials for these alternating layers (e.g., conductive vs. insulating) dictates their specific roles.\n\nTo ensure proper electrical operation and prevent interference, an 'insulating layer' is strategically placed above the circuit portion and between the first and second stacked portions. This dielectric barrier minimizes parasitic capacitance and crosstalk, which are critical considerations in high-density integrated circuits.\n\nA defining characteristic of how this technology works is its precise height management. The patent specifies that the height of an uppermost first layer of the second stacked portion, from the substrate surface, is either substantially equal to or higher than the height of an uppermost electrode layer of the first stacked portion. This precise height control is vital for optimizing electrical connections between layers, simplifying subsequent manufacturing steps like planarization, and ensuring uniform, low-resistance pathways for signals. This meticulous design enables the device to achieve higher density, faster signal propagation, and improved power efficiency by overcoming common challenges in 3D integration.","question":"How does Semiconductor Device and Method for Manufacturing Same work?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) primarily solves the escalating challenges associated with increasing device density and performance in semiconductor manufacturing, particularly as traditional planar scaling approaches reach their fundamental limits. The industry faces several interconnected problems that this innovation addresses:\n\nFirstly, **space limitations on the silicon wafer**. As transistors shrink, packing more components onto a flat chip becomes increasingly difficult and expensive, leading to diminishing returns on performance gains. This creates a bottleneck for further miniaturization and functionality.\n\nSecondly, **interconnect bottlenecks and signal integrity**. In highly dense chips, the wires connecting components (interconnects) become longer and more numerous, leading to increased signal latency, power consumption, and potential crosstalk. Existing 3D stacking methods often struggle to create efficient and reliable vertical interconnects without introducing new issues.\n\nThirdly, **manufacturing complexity and yield**. Fabricating multi-layered structures with diverse materials and precise alignment is inherently complex. Variations in layer heights and non-planar surfaces can lead to manufacturing defects, reduced yields, and increased production costs. The lack of standardized, reliable vertical integration techniques has been a significant hurdle.\n\nBy introducing a meticulous vertical stacking architecture with precise height management and strategic insulating layers, this patent offers a robust solution. It enables denser integration of components, optimizes inter-layer electrical connections for faster and more efficient data flow, and simplifies the overall manufacturing process by ensuring critical layer congruency. Ultimately, it provides a viable pathway for extending the capabilities of semiconductor devices beyond the constraints of 2D design, enabling the next generation of high-performance and energy-efficient electronics.","question":"What problem does Semiconductor Device and Method for Manufacturing Same solve?"},{"answer":"The patent \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) lists its inventors, though the provided patent data in the prompt does not specify their names. Typically, such patents are the result of extensive research and development efforts by a team of engineers and scientists within a semiconductor company or research institution.\n\nThese individuals would possess deep expertise in various fields, including materials science, electrical engineering, physics, and semiconductor fabrication processes. Their work would involve conceptualizing the novel device architecture, designing the intricate layering schemes, and devising the manufacturing methods required to achieve the specified precision and performance. The collaborative nature of modern semiconductor R&D means that such an invention is often a culmination of contributions from multiple specialists.\n\nWhile the specific inventors are not provided in the prompt, their collective ingenuity and dedication to overcoming the significant challenges in advanced chip design are evident in the detailed technical specifications of this patent. Their contribution marks a significant step forward in the ongoing quest to push the boundaries of semiconductor capabilities, paving the way for future technological advancements across the electronics industry. The assignee, if provided, would indicate the company or organization that owns the rights to the patent, reflecting their investment in this cutting-edge research.","question":"Who invented Semiconductor Device and Method for Manufacturing Same?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) offers several key benefits that are crucial for the advancement of modern electronics. These advantages stem from its innovative approach to vertical integration and precise architectural control:\n\nFirstly, **significantly increased device density**. By stacking components like circuit portions and alternating layers vertically, this patent enables more transistors and other functional elements to be packed into a smaller physical area. This is vital for miniaturizing devices while simultaneously boosting their processing power, addressing the growing demand for compact yet powerful gadgets.\n\nSecondly, **enhanced performance and speed**. The precise vertical stacking and optimized interconnects described in this patent lead to shorter electrical signal paths between different parts of the chip. Shorter paths mean faster data transfer and reduced signal latency, resulting in higher operating speeds for processors and memory. This is particularly beneficial for high-performance computing, AI accelerators, and real-time applications.\n\nThirdly, **improved power efficiency**. Reduced interconnect lengths and optimized electrical pathways minimize energy loss due to resistance and capacitance. This translates directly into lower power consumption for the semiconductor device, leading to longer battery life for mobile and IoT devices, and reduced operational costs for data centers.\n\nFinally, **greater manufacturing reliability and yield**. The patent's emphasis on precise height management of stacked layers helps ensure uniform surfaces during fabrication. This reduces manufacturing defects, improves the consistency of inter-layer connections, and ultimately leads to higher production yields and more reliable devices. These benefits collectively make \"Semiconductor Device and Method for Manufacturing Same\" a pivotal innovation for the future of semiconductor technology, enabling more capable and efficient electronic systems across various industries.","question":"What are the key benefits of Semiconductor Device and Method for Manufacturing Same?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) distinguishes itself from prior art through its meticulous and optimized approach to vertical integration, addressing several shortcomings of previous methods for increasing chip density and performance.\n\nPrior art in 3D integration often involved techniques like stacked die packaging (stacking separate, pre-fabricated chips) or through-silicon vias (TSVs) for vertical connections. While these methods increased density, they frequently introduced challenges such as longer interconnects between dies, higher thermal management complexity, and significant manufacturing overhead. Early monolithic 3D integration attempts also struggled with thermal budget constraints and maintaining precise alignment across multiple active layers.\n\nThis patent, however, offers a more integrated and precise solution. Its key differentiators include:\n\n1.  **Direct Integration Above Circuit Portion:** Unlike simply stacking separate dies, this invention places a 'second stacked portion' with alternating layers directly *above* the foundational 'circuit portion' (containing a transistor). This tighter integration minimizes physical separation and optimizes inter-layer communication.\n2.  **Alternating Layered Structure:** The 'second stacked portion' is explicitly designed with alternating 'first layers' and 'second layers'. This structured approach allows for more sophisticated functional integration (e.g., specific memory or logic types) compared to generic stacking, potentially offering better electrical properties and customized performance.\n3.  **Precision Height Management:** Perhaps the most critical difference is the patent's emphasis on ensuring that the height of the uppermost first layer of the second stacked portion is substantially equal to or higher than the uppermost electrode layer of the first stacked portion. This precise height control directly tackles the manufacturing challenge of achieving planar surfaces for reliable interconnects. Prior art often struggled with non-uniform layer thicknesses, leading to defects and reduced yield. This patent's solution leads to superior planarization, more efficient vertical interconnects, and enhanced manufacturing reliability.\n\nIn essence, \"Semiconductor Device and Method for Manufacturing Same\" moves beyond generic 3D stacking to a highly engineered, precision-driven vertical integration. It addresses fundamental issues of interconnect efficiency, signal integrity, and manufacturability more comprehensively than many prior art solutions, making it a significant advancement in semiconductor device architecture.","question":"How is Semiconductor Device and Method for Manufacturing Same different from prior art?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) is set to have a profound impact across a wide array of industries that rely on advanced electronic devices. Its ability to enable denser, faster, and more power-efficient chips will drive innovation in numerous sectors:\n\nFirstly, **High-Performance Computing (HPC) and Data Centers**. These industries constantly demand more powerful processors and memory to handle massive datasets, complex simulations, and cloud computing workloads. This patent's vertical integration can significantly reduce data access latency and increase throughput, leading to more efficient and powerful servers and supercomputers.\n\nSecondly, **Artificial Intelligence (AI) and Machine Learning (ML)**. AI accelerators are often bottlenecked by the 'memory wall' – the time and energy spent moving data between processing units and memory. By enabling tight, vertical integration of compute and memory, this innovation can drastically improve the performance and energy efficiency of AI chips, from training large models to real-time inference at the edge.\n\nThirdly, **Mobile and Consumer Electronics**. The continuous drive for thinner, lighter, and more feature-rich smartphones, tablets, and wearables directly benefits from higher component density. This patent allows manufacturers to pack more functionality into smaller form factors, extend battery life, and enhance device capabilities, improving the user experience.\n\nFourthly, **Internet of Things (IoT) and Edge Computing**. IoT devices require powerful yet extremely energy-efficient chips to operate autonomously in various environments. This innovation facilitates the creation of compact, high-performance, and low-power chips ideal for smart sensors, connected devices, and localized data processing at the network's edge.\n\nFinally, **Automotive and Aerospace**. These sectors increasingly rely on advanced electronics for autonomous driving, in-vehicle infotainment, and sophisticated control systems. The reliability, performance, and compact size enabled by this patent are critical for safety-critical applications and space-constrained environments. The \"Semiconductor Device and Method for Manufacturing Same\" thus underpins the next wave of technological advancements across these and many other high-tech industries.","question":"What industries will Semiconductor Device and Method for Manufacturing Same impact?"},{"answer":"The patent titled \"Semiconductor Device and Method for Manufacturing Same\" (US-9853052) has distinct dates for its filing and publication, which are important milestones in its intellectual property lifecycle.\n\n**Filing Date:** This patent was filed on **2017-01-20**. The filing date is the date on which the patent application was initially submitted to the patent office. This date is crucial as it typically establishes the 'priority date' for the invention, meaning it marks the earliest date from which the invention's novelty and non-obviousness are assessed against prior art. It signifies the point at which the inventors formally claimed their invention.\n\n**Publication Date:** The patent was subsequently published on **2017-12-26**. The publication date is when the patent application (or the granted patent, in some jurisdictions) is made publicly available. This allows the general public, including competitors and researchers, to review the details of the invention. For US patents, applications are typically published around 18 months after their earliest filing date, though this patent appears to have been published within a year, possibly indicating an accelerated process or specific application type.\n\nThe period between filing and publication allows the patent office to conduct its examination, and the publication itself informs the industry of the ongoing innovation. The granting of the patent (which would follow publication and successful examination) would then confer exclusive rights to the patent holder for a specified period. These dates for \"Semiconductor Device and Method for Manufacturing Same\" highlight its relatively recent emergence as a protected intellectual property, placing it firmly within the context of contemporary semiconductor innovation.","question":"When was Semiconductor Device and Method for Manufacturing Same filed/granted?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) has broad commercial applications due to its fundamental improvements in semiconductor device architecture. Its ability to enable higher density, enhanced performance, and superior power efficiency makes it valuable across numerous product categories:\n\nFirstly, in **Consumer Electronics**, this innovation can lead to the next generation of smartphones, tablets, and laptops that are even thinner, lighter, and more powerful. Manufacturers can integrate more features, improve battery life, and enhance processing capabilities for demanding applications like augmented reality (AR) and high-resolution media. The compact nature of devices built using this technology will be a significant market differentiator.\n\nSecondly, for **Artificial Intelligence (AI) Accelerators and High-Performance Computing (HPC)**, the patent's principles are critical. It allows for the tighter integration of logic and memory, directly addressing the 'memory wall' bottleneck in AI workloads. This means faster training of AI models, more efficient inference at the edge, and more powerful processing for big data analytics and scientific simulations. Companies developing AI chips or cloud infrastructure stand to gain immense performance advantages.\n\nThirdly, in the **Internet of Things (IoT) and Wearables** markets, the demand for compact, low-power, yet intelligent devices is paramount. This patent enables the creation of highly integrated chips that can perform complex tasks with minimal energy consumption, extending the battery life of smart sensors, medical wearables, and connected home devices. Its reliability and density are crucial for widespread IoT adoption.\n\nFinally, **Automotive and Industrial Systems** will also benefit. Autonomous vehicles, advanced driver-assistance systems (ADAS), and industrial automation require robust, high-performance, and compact electronic control units. The enhanced reliability and processing power enabled by \"Semiconductor Device and Method for Manufacturing Same\" are essential for safety-critical and mission-critical applications in these sectors. The commercial impact of this patent is therefore pervasive, touching virtually every segment of the electronics industry by enabling more capable and efficient hardware.","question":"What are the commercial applications of Semiconductor Device and Method for Manufacturing Same?"},{"answer":"The \"Semiconductor Device and Method for Manufacturing Same\" patent (US-9853052) lays a robust foundation for future developments in semiconductor technology, particularly in advanced 3D integration. Several key advancements can be anticipated building upon the principles outlined in this invention:\n\nFirstly, **further optimization of material science and deposition techniques**. As the industry pushes for even higher density, research will focus on novel materials for the alternating 'first layers' and 'second layers' within the stacked portions. This could involve new high-k dielectrics, advanced conductors, or even 2D materials to further enhance electrical properties, reduce leakage, and improve thermal conductivity. Deposition techniques will become even more precise, potentially moving towards atomic-scale control across larger wafer sizes.\n\nSecondly, **integration with heterogeneous components**. While the patent focuses on integrating a circuit portion with stacked layers, future developments will likely expand to integrate a wider variety of disparate components. This could include stacking different types of logic, various memory technologies (e.g., DRAM, MRAM, RRAM), specialized sensors, and even photonic or quantum computing elements within a single, highly dense vertical stack. This would lead to true 'system-on-vertical-chip' solutions, minimizing the need for external packaging and maximizing overall system performance.\n\nThirdly, **advanced thermal management solutions**. As devices become denser due to vertical stacking, managing heat dissipation becomes even more critical. Future developments building on \"Semiconductor Device and Method for Manufacturing Same\" will undoubtedly incorporate innovative thermal management strategies, such as integrated microfluidic cooling channels, advanced heat spreaders within the stack, or novel material interfaces designed to efficiently conduct heat away from active layers. This ensures sustained high performance without thermal throttling.\n\nFinally, **scalable manufacturing processes and yield improvements**. As the technology matures, there will be continuous efforts to refine the manufacturing methods described in the patent to achieve higher yields and lower production costs at scale. This includes optimizing planarization steps, developing more robust inter-layer interconnects, and implementing advanced in-situ monitoring and control systems during fabrication. These future developments, stemming from the core innovation of \"Semiconductor Device and Method for Manufacturing Same,\" will solidify its role as a cornerstone for next-generation, high-performance, and energy-efficient electronic systems across all technology sectors.","question":"What are the future developments expected for Semiconductor Device and Method for Manufacturing Same?"}],"topics":["semiconductor device","manufacturing method","3D integration","chip stacking","vertical interconnects","evolution","semiconductor","technology"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Method for Manufacturing Same - Patent US-9853052","description":"Discover the 'Semiconductor Device and Method for Manufacturing Same' patent. This innovation enables high-density chip stacking with precise layer alignment for next-gen performance and efficiency.","keywords":["semiconductor device","manufacturing method","3D integration","chip stacking","vertical interconnects","high-density chips","transistor architecture","H01L","patent US-9853052","Semiconductor Device and Method for Manufacturing Same"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853052","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853052","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing same\" (US-9853052). https://patentable.app/patents/US-9853052","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853052","json":"https://patentable.app/api/llm-context/US-9853052","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:10.218Z"}