{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853054","patent":{"patent_number":"US-9853054","title":"Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation","assignee":null,"inventors":[],"filing_date":"2016-09-15T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium."},"analysis":{"summary":"The patent, **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054), introduces a groundbreaking method for fabricating high-performance semiconductor structures by preventing a critical issue known as edge strain relaxation in extremely thin silicon germanium (SiGe) layers. This innovation is vital for the continued scaling and performance enhancement of advanced transistors.\n\n**Core Innovation:** The invention's core lies in its unique process of selective oxidation to create oxide regions that effectively 'pin' and preserve the beneficial strain within extremely thin SiGe layers, thereby preventing its degradation at the edges of patterned features.\n\n**Problem Being Solved:** As transistors shrink, especially those utilizing strained SiGe on silicon-on-insulator (SOI) substrates for enhanced carrier mobility, the inherent strain at the edges of these thin, patterned SiGe layers tends to relax. This relaxation leads to non-uniform device performance, reduced speed, increased power consumption, and lower manufacturing yields, hindering the full potential of advanced CMOS technology.\n\n**Key Technical Approach:** The method involves forming a strained SiGe layer on a substrate, followed by the application of a patterned hard mask. Crucially, exposed portions of the strained SiGe layer are then subjected to a controlled oxidation process. This forms stable oxide regions in place of the exposed SiGe, which mechanically support and maintain the strain in the unoxidized, active SiGe channel regions. This ensures a uniform and high-level strain across the entire device.\n\n**Business Value and Applications:** This technology offers significant business value by enabling the production of faster, more power-efficient, and more reliable microprocessors and memory chips. It is critical for the development of advanced computing, AI accelerators, 5G infrastructure, and next-generation mobile devices. By improving device uniformity and yield, it can also reduce manufacturing costs for cutting-edge semiconductors.\n\n**Market Opportunity:** The market for high-performance, energy-efficient semiconductors is rapidly expanding, driven by pervasive digitalization. This patent positions manufacturers to overcome a fundamental physical barrier, allowing them to capture a larger share of the market for advanced logic and memory components in a competitive landscape where every performance gain is critical.","layman_explanation":"In the world of advanced electronics, the constant drive is to make devices smaller, faster, and more energy-efficient. This is particularly true for the tiny transistors that power our smartphones, computers, and AI systems. One of the key materials used to achieve these goals is a special blend of silicon and germanium, called silicon germanium (SiGe), which, when 'strained' (think of it as being stretched tightly), allows electricity to flow much faster.\n\n**1. What Problem Does This Solve?**\n\nThe challenge arises when these SiGe layers are made incredibly thin – a necessity for modern, ultra-small transistors. Imagine a very thin, tightly stretched elastic sheet. If you cut out a small shape from it, the edges of that shape tend to sag or lose their tightness. In semiconductor terms, this 'sagging' is called 'edge strain relaxation.' When the beneficial strain in these extremely thin SiGe layers relaxes at the edges of the tiny transistor components, it significantly degrades their performance. The electrons and holes (the carriers of electricity) don't move as fast, leading to slower chips, higher power consumption, and inconsistencies across different chips during manufacturing. This problem has been a major roadblock to further miniaturizing and enhancing the performance of advanced microprocessors, creating a bottleneck for the entire electronics industry.\n\n**2. How Does It Work?**\n\nThe patent, **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation**, offers an ingenious solution to this problem. Instead of letting the edges relax, this innovation introduces a clever manufacturing step. First, a thin layer of strained SiGe is created on a special insulating base (like a tiny blanket on a rubber sheet). Then, a 'hard mask' (think of it as a stencil) is placed on top, defining where the actual transistor will be. The magic happens next: the exposed SiGe around the edges of the stencil is then subjected to a controlled 'oxidation' process. This means those exposed SiGe portions are chemically converted into stable oxide regions. Picture these oxide regions as tiny, rigid walls or anchors that form right where the strain would normally relax. These 'walls' mechanically support and 'lock in' the strain in the remaining, unoxidized SiGe that forms the active part of the transistor. This ensures that the beneficial stretchiness (strain) remains uniform and strong across the entire, extremely thin SiGe layer, preventing it from sagging at the edges.\n\n**3. Why Does This Matter?**\n\nThis innovation matters immensely because it directly enables the creation of next-generation computer chips that are both significantly faster and more energy-efficient. By solving the edge strain relaxation problem, this patent allows chip manufacturers to fully leverage the performance benefits of strained SiGe in their most advanced designs. This translates into:\n\n*   **Superior Products:** Faster smartphones, more powerful AI accelerators, and more capable cloud servers. Companies can offer products that simply perform better than the competition.\n*   **Cost Efficiency:** By ensuring consistent strain, the manufacturing process becomes more reliable, reducing the number of defective chips (yield loss) and ultimately lowering production costs for these highly complex components.\n*   **Future-Proofing:** This technology is critical for advancing to even smaller transistor sizes (sub-10 nanometers), extending the capabilities of Moore's Law and opening doors for entirely new electronic architectures and applications. It provides a strategic advantage for companies looking to lead the market in cutting-edge semiconductor technology, offering a robust return on investment through enhanced product competitiveness and manufacturing efficiency.\n\n**4. What's Next?**\n\nThis technology is poised to become a foundational element in the fabrication of high-performance microprocessors and specialized chips for AI, 5G, and beyond. Expect to see its principles integrated into advanced foundry processes, leading to a new generation of devices with unprecedented speed and efficiency. Its market adoption will likely accelerate as the demand for extreme miniaturization and performance continues to grow, driving innovation across the entire electronics ecosystem and potentially shaping investment strategies in the semiconductor sector for years to come.","technical_analysis":"The patent **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054) details a pivotal advancement in semiconductor fabrication, specifically addressing the persistent challenge of edge strain relaxation in extremely thin silicon germanium (SiGe) layers on silicon-on-insulator (SOI) substrates. This phenomenon significantly degrades device performance in advanced CMOS nodes, and this invention offers a robust method to mitigate it.\n\n**Technical Architecture and Problem Statement:**\nAdvanced transistors often leverage strained SiGe channels to boost carrier mobility, thereby increasing device speed and reducing power consumption. In SOI architectures, a thin SiGe layer is grown on a buried oxide (BOX) layer. For optimal electrostatic control and to minimize short-channel effects, this SiGe layer must be extremely thin (e.g., a few nanometers). However, when such a strained, thin SiGe layer is patterned into discrete device features (e.g., fins for FinFETs or nanowires for GAA FETs), the free surfaces created at the edges allow the stored elastic energy (strain) to relax. This edge strain relaxation results in a non-uniform strain profile across the active channel region—strain is highest in the center and lowest at the edges. This non-uniformity leads to variable device characteristics, reduced peak performance, and increased parameter spread, impacting manufacturing yield and overall circuit reliability. The technical architecture aims to maintain uniform, high strain across the entire active SiGe region.\n\n**Implementation Details and Algorithm Specifics (Methodology):**\nThis patent describes a method for forming a semiconductor structure that effectively preserves strain. The process flow is as follows:\n\n1.  **Forming a Strained Silicon Germanium Layer:** A strained silicon germanium layer is first formed on top of a substrate. This typically involves epitaxial growth, where a SiGe alloy is deposited on a silicon substrate (or an SOI wafer's top silicon layer) with a specific lattice mismatch, inducing tensile or compressive strain. The thickness of this layer is critical, as the invention specifically targets 'extremely thin' layers.\n2.  **Forming at least one Patterned Hard Mask Layer:** Subsequently, at least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. This hard mask, often made of materials like silicon nitride or silicon dioxide, defines the regions that will become the active device channels and protects them during subsequent processing. The patterning is achieved through standard lithography and etching techniques.\n3.  **Selective Oxidation of Exposed SiGe:** This is the core inventive step. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. These exposed portions are the areas of SiGe not covered by the hard mask, typically at the edges of the patterned active regions. The oxidizing process forms a first oxide region and a second oxide region within these respective exposed portions of the strained SiGe. The selective nature of this oxidation is crucial. Depending on the conditions (e.g., temperature, oxidant type, pressure), the SiGe can be oxidized to form SiO2, often pushing germanium atoms towards the SiGe/SiO2 interface or creating germanium-rich SiGe. The key mechanism is that the volumetric expansion of SiGe during oxidation, or the mechanical rigidity of the formed oxide, exerts stress on the adjacent, unoxidized SiGe channel. This stress counteracts the tendency for strain relaxation at the edges, effectively 'locking in' the strain in the active channel region.\n\n**Integration Patterns and Performance Characteristics:**\nThis method is highly compatible with existing advanced CMOS fabrication flows, integrating seamlessly after SiGe channel formation and patterning. The hard mask can serve multiple purposes, including acting as an etch mask and a sacrificial layer for gate formation. The selective oxidation step can be tailored to control the depth and composition of the oxide regions, optimizing the strain-preserving effect. Performance characteristics directly impacted include:\n\n*   **Enhanced Carrier Mobility:** By maintaining uniform strain, the electron and hole mobility are maximized across the entire channel, leading to higher drive currents.\n*   **Improved Device Speed:** Increased mobility translates to faster switching speeds for transistors.\n*   **Reduced Power Consumption:** Higher efficiency from improved mobility can lead to lower operating voltages or currents for the same performance, reducing power consumption.\n*   **Increased Device Uniformity:** Elimination of edge strain relaxation ensures consistent electrical characteristics across a wafer, reducing parameter variability (e.g., Vth spread) and improving circuit design predictability.\n*   **Higher Manufacturing Yields:** Reduced variability directly contributes to higher yields of functional chips.\n\n**Code-level Implications (Fabrication Process Control):**\nFrom a fabrication perspective, the 'code-level' implications involve precise control over:\n\n*   **Epitaxial Growth:** Thickness, composition (Ge content), and strain state of the initial SiGe layer.\n*   **Lithography and Etching:** Critical dimension (CD) control for the hard mask patterning, ensuring accurate definition of active regions and exposed areas.\n*   **Oxidation Process:** Temperature, time, oxidant partial pressure, and gas flow rates must be precisely controlled to achieve selective oxidation, control oxide thickness, and ensure effective strain preservation without damaging the active SiGe channel. The choice of oxidation ambient (e.g., dry O2, wet O2, steam) and temperature will dictate the kinetics and mechanism of SiGe oxidation and its interaction with strain.\n\nThis technology offers a critical pathway for the continued advancement of SiGe-based devices into the most aggressive technology nodes, enabling the next generation of high-performance and energy-efficient electronic systems.","business_analysis":"The patent, **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054), represents a significant business opportunity within the fiercely competitive semiconductor industry. Its ability to solve a fundamental physical limitation in advanced transistor design directly translates into substantial market advantages and revenue potential for chip manufacturers and technology companies.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach well over a trillion dollars in the coming years, with logic and memory components forming the largest segments. The demand for high-performance, energy-efficient chips is insatiable, driven by megatrends such as Artificial Intelligence (AI), 5G wireless communication, autonomous vehicles, cloud computing, and the Internet of Things (IoT). All these applications require advanced processors that are faster, consume less power, and are increasingly miniaturized. This invention directly addresses a critical bottleneck in manufacturing such chips, making it relevant to a multi-billion dollar segment of the semiconductor market, particularly in high-end processors, mobile SoCs, and specialized accelerators.\n\n**Competitive Advantages:**\nCompanies that successfully implement this technology will gain several key competitive advantages:\n\n1.  **Performance Leadership:** The ability to produce transistors with consistently higher carrier mobility due to preserved strain will lead to industry-leading device speeds and lower power consumption. This translates into superior products that outperform competitors.\n2.  **Manufacturing Yield Improvement:** By mitigating edge strain relaxation, the patent reduces variability in device characteristics across a wafer. This directly translates to higher manufacturing yields, reducing costs per chip and increasing profitability.\n3.  **Enabling Future Nodes:** This invention is critical for scaling to sub-10nm technology nodes where extremely thin SiGe layers are essential. Companies with this capability can lead the charge into next-generation architectures like Gate-All-Around (GAA) FETs, securing a first-mover advantage.\n4.  **Intellectual Property Protection:** Owning or licensing this patent provides a strong IP barrier, protecting market share and potentially generating licensing revenue from competitors.\n\n**Revenue Potential:**\nRevenue potential stems from two main areas: direct product sales and licensing. Chip manufacturers (e.g., Intel, TSMC, Samsung Foundry) can integrate this process into their fabrication lines to produce next-generation CPUs, GPUs, and custom ASICs with superior performance. This will allow them to command premium prices and capture market share. Alternatively, the patent holder could license the technology to foundries or IDMs (Integrated Device Manufacturers), generating significant recurring revenue streams based on royalties per wafer or per device produced.\n\n**Business Models:**\n\n*   **IDM Integration:** An Integrated Device Manufacturer could use this technology in-house to enhance their product portfolio, offering differentiated high-performance chips.\n*   **Foundry Licensing:** A foundry could license the method to offer a cutting-edge process technology to its fabless clients, attracting high-value customers.\n*   **IP Monetization:** The patent owner could focus solely on licensing the technology, acting as an IP provider to the broader semiconductor ecosystem.\n\n**Strategic Positioning:**\nThis patent allows a company to strategically position itself at the forefront of advanced semiconductor manufacturing. It moves a company from a 'follower' to a 'leader' in addressing fundamental physical challenges in scaling. By offering solutions that enable higher performance and better yields, it enhances a company's reputation as an innovator and a reliable partner for advanced chip development. This strengthens supply chain relationships and secures long-term contracts.\n\n**ROI Projections:**\nWhile specific ROI depends on implementation costs and market adoption, the potential for significant returns is high. The cost savings from improved yields alone can be substantial, as defects in advanced nodes are incredibly expensive. Furthermore, the ability to deliver differentiated products with superior performance can lead to increased average selling prices (ASPs) and market share gains. For a company investing in R&D, this patent protects that investment and provides a clear path to commercialization, with ROI potentially realized through increased product sales, market capitalization growth, and licensing fees over the patent's lifespan.","faqs":[{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054) is a patent describing a novel method for manufacturing advanced semiconductor structures. At its core, it addresses a critical challenge in creating high-performance transistors using very thin layers of silicon germanium (SiGe) on an insulating substrate (SOI).\n\nTraditionally, when these thin, strained SiGe layers are patterned into tiny device features, the beneficial 'strain'—which makes electrons move faster—tends to relax or dissipate at the edges. This 'edge strain relaxation' degrades the device's performance, making it slower and less efficient.\n\nThis invention introduces a sophisticated fabrication process that prevents this relaxation. By strategically oxidizing the exposed SiGe portions at the edges, it forms stable oxide regions. These oxide regions act as mechanical anchors, effectively 'locking in' the strain in the active SiGe channel, ensuring uniform and high-performance operation even in extremely thin devices. This is a crucial step for the continued miniaturization and performance enhancement of modern microchips.\n\nKeywords: semiconductor patent, SiGe devices, SOI technology, strain engineering, advanced fabrication, US-9853054.","question":"What is Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation?"},{"answer":"The method described in the **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent works by a clever sequence of material processing steps. First, a strained silicon germanium (SiGe) layer is formed on a substrate, typically an SOI wafer. This layer is 'strained' to enhance carrier mobility, which boosts transistor speed.\n\nNext, a patterned hard mask layer is applied. This mask acts like a stencil, defining the active areas of the future transistor and protecting them. Critically, the innovation occurs during a subsequent oxidation process. At least two exposed portions of the strained SiGe layer—the edges not covered by the hard mask, which are prone to strain relaxation—are oxidized.\n\nThis oxidation transforms these exposed SiGe areas into stable oxide regions. These newly formed oxide regions then serve as rigid boundaries or mechanical anchors. They physically prevent the remaining, unoxidized SiGe channel from relaxing its strain, thereby ensuring that the beneficial, performance-boosting strain is uniformly maintained across the entire active device area. This precise material transformation at the edges is key to the invention's effectiveness.\n\nKeywords: SiGe fabrication, oxidation process, strain preservation, hard mask, semiconductor methodology, how it works.","question":"How does Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation work?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent solves the critical problem of 'edge strain relaxation' in extremely thin silicon germanium (SiGe) layers used in advanced transistors. As transistors are made smaller and use thinner layers of strained SiGe for performance, the beneficial strain—which makes electrons move faster—tends to dissipate or relax at the edges of these patterned features.\n\nThis relaxation leads to a non-uniform strain profile across the transistor channel, which in turn causes several issues: degraded device speed, increased power consumption, and significant variability in electrical characteristics from one transistor to another. These problems hinder the ability to reliably manufacture high-performance, energy-efficient chips at advanced technology nodes (like 7nm or 5nm).\n\nBy preventing this edge strain relaxation, the invention ensures that the full performance potential of strained SiGe is realized consistently and uniformly, thereby enabling the continued scaling and performance enhancement of next-generation microprocessors and electronic devices. It removes a major bottleneck in advanced semiconductor manufacturing.\n\nKeywords: edge strain, semiconductor challenge, transistor performance, SiGe problem, scaling solution, microchip efficiency.","question":"What problem does Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation solve?"},{"answer":"The patent **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054) lists its inventors. While the specific names are not provided in the prompt, patents are typically assigned to individuals or teams of researchers and engineers working for semiconductor companies or research institutions. These inventors contribute their expertise in materials science, process engineering, and device physics to develop such groundbreaking technologies.\n\nSuch inventions are often the result of extensive research and development efforts aimed at overcoming fundamental challenges in microelectronics fabrication. The collaborative nature of semiconductor R&D means that these innovations often emerge from dedicated teams focused on pushing the boundaries of transistor technology.\n\nTo find the specific inventors, one would typically refer to the full patent document available through official patent databases. The patent's assignee, if listed, would typically be the company or entity that owns the intellectual property rights to the invention.\n\nKeywords: patent inventors, semiconductor research, intellectual property, microelectronics innovators, patent ownership.","question":"Who invented Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent offers several significant benefits for the semiconductor industry and, ultimately, for consumers:\n\n1.  **Enhanced Device Performance:** By maintaining uniform strain in extremely thin SiGe layers, the invention enables higher carrier mobility. This directly translates to faster switching speeds for transistors, leading to quicker processors and more responsive electronic devices like smartphones, laptops, and AI accelerators.\n2.  **Lower Power Consumption:** Increased efficiency from optimized carrier mobility means transistors can achieve the same performance at lower operating voltages or currents. This results in more power-efficient chips, extending battery life for mobile devices and reducing energy consumption in data centers.\n3.  **Improved Manufacturing Yields:** The elimination of edge strain relaxation leads to greater uniformity in device characteristics across a wafer. This reduces variability, which is crucial for mass production, resulting in higher manufacturing yields and lower production costs for advanced chips.\n4.  **Advanced Scaling Capability:** This technology provides a robust pathway for integrating extremely thin strained SiGe channels into the most aggressive technology nodes (e.g., 7nm, 5nm, and beyond). It is a key enabler for next-generation transistor architectures, allowing for continued miniaturization and performance scaling.\n\nThese benefits combine to create more powerful, reliable, and cost-effective electronic components, driving innovation across various industries.\n\nKeywords: chip performance, power efficiency, manufacturing yield, advanced scaling, SiGe benefits, transistor speed.","question":"What are the key benefits of Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent distinguishes itself from prior art by offering a novel and highly effective method for preventing edge strain relaxation, particularly in *extremely thin* silicon germanium (SiGe) layers. Prior art solutions often faced limitations in this specific context.\n\nMany previous approaches, such as global strain engineering (e.g., using relaxed buffer layers), stress memorization techniques (SMT), or spacer-induced strain, often provide a more generalized or 'bulk' method for strain introduction or preservation. While effective to a degree, these methods often struggle with precisely and uniformly maintaining strain at the *edges* of finely patterned, ultrathin SiGe features, where the edge effects become dominant. The strain at these edges would still tend to relax, leading to performance compromises.\n\nThis invention, however, directly addresses the edge relaxation by transforming the problematic exposed SiGe regions into stable oxide structures through selective oxidation. These newly formed oxide regions act as intrinsic, rigid mechanical anchors that actively 'pin' the strain in the adjacent, active SiGe channel. This material transformation at the critical interface provides a more direct, robust, and localized solution compared to external stressors or global approaches, making it uniquely effective for the challenges of extremely thin SiGe devices.\n\nKeywords: prior art comparison, SiGe innovation, edge strain mitigation, selective oxidation, semiconductor differentiation, advanced process.","question":"How is Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation different from prior art?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent will have a profound impact across numerous industries that rely on high-performance, energy-efficient semiconductor devices. Its ability to unlock new levels of chip speed and power efficiency is a foundational advancement.\n\n1.  **Consumer Electronics:** Smartphones, laptops, tablets, and wearable devices will benefit from faster processors, longer battery life, and enhanced capabilities, driving the next generation of personal computing and communication.\n2.  **Artificial Intelligence (AI) and Machine Learning (ML):** AI accelerators and specialized ML chips require immense processing power. This technology will enable more efficient execution of complex AI algorithms, supporting advancements in areas like natural language processing, computer vision, and autonomous systems.\n3.  **High-Performance Computing (HPC) and Cloud Computing:** Data centers and supercomputers demand the fastest and most efficient processors. This invention will contribute to more powerful servers, reducing operational costs and enabling more complex simulations and data analysis.\n4.  **Telecommunications (5G and Beyond):** Advanced communication infrastructure, including 5G base stations and network equipment, will leverage these faster chips for high-speed data processing and low-latency communication.\n5.  **Automotive:** Autonomous vehicles and advanced driver-assistance systems (ADAS) require robust, high-performance processors for real-time decision-making and sensor fusion, an area where this technology will be critical.\n\nEssentially, any industry driven by advanced digital technology stands to benefit from the improved performance and efficiency enabled by this semiconductor breakthrough.\n\nKeywords: industry impact, AI chips, 5G technology, consumer electronics, HPC, automotive electronics, semiconductor market.","question":"What industries will Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation impact?"},{"answer":"The patent **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** (US-9853054) was filed on **September 15, 2016**. The filing date marks the official submission of the patent application to the patent office, establishing its priority date.\n\nIt was subsequently published on **December 26, 2017**. The publication date is when the patent application becomes publicly accessible, allowing others to review the details of the invention. This date is important for transparency within the patent system and informs the public and other researchers about new technological developments.\n\nWhile the prompt only provides the publication date, for US patents, the publication often occurs before the grant. The grant date, when the patent is officially issued and enforceable, typically follows the publication and examination process. The provided data indicates the key milestones of its journey through the patent system, highlighting its relatively recent emergence as a protected innovation in the semiconductor field.\n\nKeywords: patent filing date, publication date, patent timeline, US-9853054, patent status, semiconductor IP.","question":"When was Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation filed/granted?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent enables a wide range of commercial applications by significantly improving the performance and efficiency of semiconductor devices. Its core impact is on creating faster, more reliable, and more power-efficient microchips.\n\n1.  **High-Performance Processors:** This technology is crucial for next-generation Central Processing Units (CPUs) and Graphics Processing Units (GPUs) used in servers, workstations, and high-end consumer devices. It will allow for increased clock speeds and more complex multi-core architectures.\n2.  **Mobile System-on-Chips (SoCs):** For smartphones, tablets, and wearables, the invention contributes to SoCs that deliver superior performance for demanding applications while extending battery life, a key differentiator in the mobile market.\n3.  **Artificial Intelligence (AI) Accelerators:** Specialized hardware for AI and machine learning, such as neural processing units (NPUs), will benefit from the enhanced computational speed and energy efficiency, supporting the rapid growth of AI applications.\n4.  **Network Infrastructure:** Components for 5G and future telecommunications networks, including baseband processors and routing chips, will leverage this technology for faster data throughput and lower latency.\n5.  **Automotive Electronics:** Advanced driver-assistance systems (ADAS) and autonomous driving platforms require robust, high-speed processing for real-time sensor data analysis and decision-making, making this technology highly relevant.\n6.  **IoT Devices:** While some IoT devices prioritize ultra-low power, higher-end IoT applications that require more processing power (e.g., edge AI devices) can benefit from the efficiency gains.\n\nUltimately, any product or system that demands cutting-edge computational power and energy efficiency stands to gain from the advancements enabled by this patent.\n\nKeywords: commercial applications, microchip market, AI hardware, 5G components, mobile processors, HPC applications, semiconductor business.","question":"What are the commercial applications of Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation?"},{"answer":"The **Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation** patent lays a robust foundation for future developments in semiconductor technology. Its ability to reliably produce high-performance, extremely thin strained SiGe layers opens several exciting avenues:\n\n1.  **Integration with Next-Generation Transistor Architectures:** Expect to see this method optimized for upcoming transistor designs like Gate-All-Around (GAA) FETs and potentially even more advanced structures. These architectures rely heavily on ultrathin channels for electrostatic control, making this strain preservation technique even more critical.\n2.  **Further Material Optimization:** Research may focus on optimizing the SiGe composition (e.g., higher germanium content) or exploring alternative strained materials, with this method adapted to ensure strain integrity. The specific conditions for selective oxidation might also be refined for even greater precision and compatibility with diverse material stacks.\n3.  **Enhanced Performance and Power Efficiency:** Continued refinement of the process will likely lead to incremental gains in carrier mobility, translating into even faster and more power-efficient chips. This iterative improvement will sustain the performance trajectory of microprocessors.\n4.  **Expanded Application Space:** As the technology matures and becomes more cost-effective, its application may expand beyond high-end logic to other areas like high-speed memory (e.g., MRAM, ReRAM) or specialized RF components, where precise strain control is beneficial.\n5.  **Synergy with Advanced Packaging:** The performance benefits at the transistor level can be further amplified through advanced packaging technologies (e.g., 3D stacking), creating highly integrated and powerful systems-on-package that leverage the foundational improvements from this patent.\n\nThis innovation is a key enabler for the continued scaling of Moore's Law and will be instrumental in shaping the capabilities of electronics for decades to come, supporting the development of increasingly complex and powerful AI, IoT, and high-performance computing systems.\n\nKeywords: future semiconductor, technology roadmap, GAA FETs, material science, power efficiency, advanced packaging, SiGe development, microelectronics trends.","question":"What are the future developments expected for Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation?"}],"topics":["silicon germanium","SiGe","strained SiGe","SOI","silicon-on-insulator","relentless","drive","miniaturization"],"tech_cluster":null},"seo":{"title":"Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation - Patent US-9853054","description":"Discover the groundbreaking Extremely Thin Silicon-on-insulator Silicon Germanium Device Without Edge Strain Relaxation patent. Solves edge strain, boosts chip performance & efficiency for next-gen electronics.","keywords":["silicon germanium","SiGe","strained SiGe","SOI","silicon-on-insulator","edge strain relaxation","semiconductor device","advanced CMOS","fabrication method","oxidation process","US-9853054","patent","chip manufacturing","transistor innovation","microelectronics"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853054","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853054","citation_suggestion":"Patentable. \"Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation\" (US-9853054). https://patentable.app/patents/US-9853054","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853054","json":"https://patentable.app/api/llm-context/US-9853054","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:36.522Z"}