{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853055","patent":{"patent_number":"US-9853055","title":"Method to improve crystalline regrowth","assignee":null,"inventors":[],"filing_date":"2016-03-30T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":3,"abstract":"The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si."},"analysis":{"summary":"The **Method to Improve Crystalline Regrowth** patent (US-9853055) introduces a groundbreaking approach to overcome a critical challenge in semiconductor manufacturing: the migration of dislocations into pristine single crystal material during the growth of adjacent conductive layers. This core innovation focuses on preventing atomic-level defects that compromise device performance and yield.\n\nThe problem being solved is the uncontrolled propagation of structural imperfections (dislocations) from newly grown material into the highly ordered, single crystalline substrate. These defects act as electrical traps or leakage paths, leading to device malfunction, reduced efficiency, and significant manufacturing losses. Existing methods often fail to fully mitigate this issue, especially as device dimensions shrink.\n\nThis technology's key technical approach involves strategically forming a conductive barrier at the interface between the layers. This barrier acts as a physical and energetic impediment to dislocation movement. The patent details several methods for creating this barrier: 1) implanting carbon impurities or depositing a Si:C (silicon-carbon) layer, which inhibits dislocation movement; 2) forming a passivation layer by annealing the single crystal in a vacuum prior to amorphous silicon deposition, preventing undesirable polycrystalline nucleation; and 3) implanting nucleation-promoting species to intentionally enhance polycrystalline nucleation away from the critical single crystalline region.\n\nThe business value and applications are substantial. By ensuring higher quality single crystal material, the patent enables semiconductor manufacturers to achieve significantly improved yields, reduced production costs, and enhanced device performance and reliability. This directly impacts the profitability and competitiveness of companies producing advanced processors, memory, sensors, and power devices. The market opportunity lies in addressing the universal need for defect-free materials in an industry where precision is paramount, offering a competitive edge to adopters of this robust technology.","layman_explanation":"The world of advanced electronics, from the smartphone in your pocket to the servers powering the internet, relies on incredibly tiny, perfectly structured components. The core of these components is often a single crystal material, like silicon, which needs to be absolutely pristine. However, during the manufacturing process, when new layers are added to build up these complex structures, a significant challenge arises: tiny imperfections, known as 'dislocations,' can emerge in the new layers and then migrate into the perfect, underlying crystal. This is a bit like a small crack in a newly paved road spreading into the perfectly smooth, existing highway – it degrades the entire structure.\n\n**1. What Problem Does This Solve?**\nThis patent, the **Method to Improve Crystalline Regrowth**, directly addresses this critical problem of defect propagation. In simple terms, it's solving the issue of 'bad stuff' (dislocations) from newly grown material spoiling the 'good stuff' (the pristine single crystal). These dislocations aren't just cosmetic; they act as electrical flaws, causing chips to leak power, operate slower, or fail entirely. For semiconductor manufacturers, this translates to lower yields (fewer good chips per wafer), increased waste, and higher production costs. Existing methods often involve complex and costly processes that don't fully eliminate the problem, leaving a persistent headache for an industry obsessed with perfection and efficiency.\n\n**2. How Does It Work?**\nThink of this innovation as building a sophisticated 'force field' or 'invisible wall' at the exact point where a new layer meets the existing, perfect crystal. This force field, which the patent calls a 'conductive barrier,' is designed to stop any dislocations from crossing over. The patent outlines a few clever ways to build this force field:\n\n*   **Carbon Reinforcement:** One method is to strategically introduce carbon atoms into this barrier layer. Imagine adding tiny, strong fibers to a concrete wall – these carbon atoms create internal stresses that 'trap' the dislocations, making it extremely difficult for them to move past the barrier. This can be done by implanting carbon or by depositing a special silicon-carbon (Si:C) layer.\n*   **Surface Smoothing:** Another approach involves meticulously preparing the surface of the perfect crystal *before* any new material is added. This is achieved by 'annealing' it in a vacuum, essentially heating it up in a super-clean environment. This process cleans and smooths the surface at an atomic level, preventing any unwanted 'rough spots' where new, imperfect crystal structures (polycrystalline nucleation) might start to form.\n*   **Defect Diversion:** In some cases, the patent suggests implanting specific materials that *encourage* defects to form in areas *away* from the critical single crystal. This is like strategically placing a 'defect magnet' in a non-essential part of the chip, drawing away any potential flaws from the vital components.\n\nIn essence, this technology provides a multi-pronged strategy to ensure the integrity of the critical single crystal material, preventing defects from ever reaching it.\n\n**3. Why Does This Matter?**\nThis innovation matters immensely for the business world because it directly impacts the bottom line of every company that designs or manufactures advanced electronics. By ensuring higher quality components, businesses can expect:\n\n*   **Increased Profitability:** Higher manufacturing yields mean more salable chips from each production run, directly boosting revenue and reducing waste.\n*   **Competitive Edge:** Producing more reliable, higher-performing chips allows companies to differentiate their products in the market, command premium prices, and gain market share.\n*   **Accelerated Innovation:** With fewer material defects, engineers can push the boundaries of chip design, creating faster processors, more efficient power devices, and more sensitive sensors, unlocking new product categories and market opportunities. It reduces the time and cost spent on debugging defect-related issues.\n\n**4. What's Next?**\nThe **Method to Improve Crystalline Regrowth** is a foundational technology. Its principles could be applied not just to silicon, but to other advanced semiconductor materials, paving the way for innovations in quantum computing, specialized sensors, and high-frequency communication. As demand for sophisticated electronics continues to grow, the ability to control material integrity at this fundamental level will become even more critical, making this patent a valuable asset for future technological leadership and investment.","technical_analysis":"The **Method to Improve Crystalline Regrowth** patent (US-9853055) presents a sophisticated set of techniques aimed at addressing a fundamental challenge in semiconductor fabrication: the propagation of crystallographic dislocations from a growing layer into a pristine single crystal substrate. This technical analysis will delve into the architecture, implementation details, and performance implications of this innovation.\n\n**Technical Architecture and Problem Statement:**\nTraditional semiconductor manufacturing processes often involve depositing or growing various conductive and insulating layers onto a single crystal silicon (or other semiconductor) substrate. A critical issue arises when defects, specifically dislocations, originating within the newly formed layer or at its interface, propagate into the underlying, highly ordered single crystal material. These dislocations disrupt the periodic atomic lattice, creating localized strain fields, dangling bonds, and altered electronic band structures. From a device physics perspective, these imperfections can act as recombination centers, scattering sites for charge carriers, or leakage paths, severely degrading device performance (e.g., increased leakage current, reduced carrier mobility, and compromised reliability).\n\n**Implementation Details and Algorithm Specifics:**\nThis patent proposes forming a *conductive barrier* at the interface to inhibit this dislocation migration. The elegance of this approach lies in its multifaceted implementation strategies:\n\n1.  **Carbon-Based Barrier Formation:**\n    *   **Mechanism:** Carbon atoms are significantly smaller than silicon atoms. When carbon impurities are implanted into the silicon lattice at the interface, or a thin Si:C layer is deposited, they introduce localized strain. This strain field can interact with the stress field of a moving dislocation. According to theories of dislocation dynamics (e.g., Cottrell atmospheres), impurities can 'pin' dislocations, increasing the energy required for them to move. The Si:C layer acts as a distinct material interface that can have a higher Peierls-Nabarro stress, making it more resistant to dislocation glide. This effectively creates an energetic barrier that dislocations find difficult to cross.\n    *   **Implementation:** Carbon implantation can be performed using ion implantation techniques, controlling dose and energy to place carbon atoms precisely at the desired interface depth. Si:C layers can be deposited using chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) techniques, allowing for precise control over stoichiometry and thickness.\n\n2.  **Vacuum Annealing for Passivation Layer:**\n    *   **Mechanism:** Polycrystalline nucleation at the single crystal surface is a major source of defects. Before depositing amorphous silicon, annealing the single crystal in a high-vacuum environment (e.g., ultra-high vacuum, UHV) promotes surface reconstruction and removes adsorbed contaminants. This process creates a clean, atomically ordered passivation layer, which significantly increases the energy barrier for heterogeneous nucleation of polycrystalline grains. A pristine surface reduces the number of favorable sites for random nucleation, promoting a more controlled, often epitaxial, regrowth.\n    *   **Implementation:** This involves a high-temperature thermal treatment in a vacuum chamber, carefully controlling parameters like temperature, duration, and vacuum level to achieve the desired surface reconstruction without causing etching or excessive surface roughening.\n\n3.  **Implantation of Nucleation-Promoting Species:**\n    *   **Mechanism:** In situations where polycrystalline silicon is desired, but its formation *at* the single crystal interface is detrimental, this method strategically implants species that *promote* nucleation in specific, non-critical regions. This effectively 'draws away' the nucleation events from the pristine single crystal surface. By providing preferential nucleation sites elsewhere, the driving force for random nucleation at the critical interface is reduced.\n    *   **Implementation:** Ion implantation of specific dopants (e.g., certain metals or heavy elements) known to act as nucleation catalysts can be patterned using lithographic techniques to define regions where polycrystalline growth is encouraged.\n\n**Integration Patterns and Performance Characteristics:**\nThese methods are designed to be integrated seamlessly into existing semiconductor fabrication flows. The carbon implantation and Si:C deposition steps can be incorporated during material growth stages. The vacuum annealing step would typically precede deposition processes. The nucleation-promoting implantation would be part of patterning and doping steps. The performance implications are significant: by inhibiting dislocation migration, devices fabricated using this approach exhibit reduced leakage currents, improved carrier mobility, and enhanced breakdown voltage characteristics. This directly translates to higher device yield, better long-term reliability, and the potential for scaling down device geometries further without encountering defect-related performance bottlenecks. This innovation promises to unlock new levels of performance and reliability in advanced microelectronic devices.","business_analysis":"The **Method to Improve Crystalline Regrowth** patent (US-9853055) represents a significant advancement in semiconductor manufacturing, poised to generate substantial business impact across the microelectronics industry. This innovation directly addresses a pervasive and costly problem, offering compelling advantages for businesses involved in chip fabrication, device design, and advanced material development.\n\n**Market Opportunity Size:**\nThe global semiconductor market is a multi-trillion-dollar industry, with continuous demand for smaller, faster, and more energy-efficient devices. A critical limiting factor in this growth is the yield loss associated with manufacturing defects, particularly crystalline dislocations. These defects can lead to billions of dollars in scrapped wafers annually. This technology targets a fundamental aspect of wafer fabrication, making its market opportunity vast and universal across all segments requiring high-quality crystalline materials, from logic and memory to power semiconductors and advanced sensors. Any foundry or integrated device manufacturer (IDM) seeking to improve yield and performance will find this patent highly relevant.\n\n**Competitive Advantages:**\nAdopting the techniques outlined in this patent provides several distinct competitive advantages:\n\n1.  **Superior Yields and Cost Reduction:** By significantly inhibiting dislocation migration, manufacturers can expect higher functional chip yields per wafer. This directly translates to lower per-chip manufacturing costs, improved profitability, and a stronger competitive pricing position.\n2.  **Enhanced Device Performance and Reliability:** Defect-free crystalline interfaces lead to superior electrical characteristics, including reduced leakage currents, higher carrier mobility, and better long-term reliability. This allows companies to produce premium products that outperform competitors, commanding higher market prices and fostering brand loyalty.\n3.  **Enabling Advanced Technologies:** As device geometries shrink and new materials are introduced, defect control becomes even more critical. This innovation provides a foundational technology that enables the development and mass production of next-generation devices, such as those for AI, 5G, IoT, and quantum computing, where material perfection is paramount.\n4.  **Reduced R&D Cycles:** By providing a reliable method for crystalline regrowth, R&D teams can accelerate the development of new processes and device architectures, reducing the time and cost associated with troubleshooting defect-related issues.\n\n**Revenue Potential and Business Models:**\nCompanies can leverage this patent through various business models:\n\n*   **Direct Implementation:** Large IDMs and foundries can license or acquire this technology for internal use, realizing immediate cost savings and performance improvements.\n*   **Technology Licensing:** The patent holder can license the technology to multiple semiconductor manufacturers, generating substantial recurring revenue streams.\n*   **Specialized Material/Process Suppliers:** Companies could emerge or expand, specializing in providing the specific carbon implantation services, Si:C deposition materials, or vacuum annealing equipment optimized for this method.\n*   **Joint Ventures/Partnerships:** Collaborations with leading foundries or research institutions could accelerate adoption and further develop the technology for niche applications.\n\n**Strategic Positioning:**\nThis patent positions its adopters at the forefront of semiconductor manufacturing quality. It moves beyond incremental process improvements to offer a fundamental solution to a long-standing problem. Strategically, it allows companies to differentiate themselves based on superior material quality, which is increasingly becoming a key differentiator in a crowded market. It also provides a robust intellectual property asset that can be used defensively or offensively in the competitive landscape.\n\n**ROI Projections:**\nWhile specific ROI will vary, the potential for significant returns is high. A modest increase in wafer yield (e.g., 5-10%) for high-volume manufacturing can translate into hundreds of millions of dollars in additional revenue and cost savings annually. Coupled with the market premium for higher-performing, more reliable devices, the investment in this technology is likely to show a rapid and substantial return, making it an attractive proposition for executives and investors alike. This innovation is not just about making better chips; it's about making chip manufacturing more profitable and sustainable.","faqs":[{"answer":"The **Method to Improve Crystalline Regrowth** (US-9853055) is a patented innovation in semiconductor manufacturing. It describes a collection of techniques designed to prevent the migration of crystallographic dislocations, or defects, into pristine single crystal material during the growth of adjacent conductive layers. These defects are tiny imperfections in the atomic structure that can severely compromise the performance and reliability of electronic devices.\n\nThe core of this invention involves strategically forming a conductive barrier at the interface between the growing layers. This barrier acts as a physical and energetic impediment, effectively stopping dislocations from crossing into the high-quality single crystal material. By implementing this method, manufacturers can ensure a higher degree of crystalline perfection in their semiconductor components.\n\nThis technology is crucial for producing more reliable and higher-performing microchips, as it directly addresses a fundamental challenge in maintaining material integrity at the nanoscale. It represents a significant step forward in defect control, moving beyond reactive measures to proactive interface engineering.","question":"What is Method to Improve Crystalline Regrowth?"},{"answer":"The **Method to Improve Crystalline Regrowth** works by creating a 'conductive barrier' at the interface where a new layer is grown onto a single crystal substrate. This barrier is designed to actively inhibit the movement of dislocations from the new layer into the pristine underlying crystal. The patent outlines several specific mechanisms for achieving this:\n\nFirst, it can involve implanting carbon impurities or depositing a silicon-carbon (Si:C) layer at the interface. Carbon atoms, being smaller than silicon, introduce localized strain fields that 'pin' or trap dislocations, making it energetically unfavorable for them to move across the barrier. This effectively forms a physical blockade against defect propagation.\n\nSecond, the method describes forming a passivation layer by annealing the single crystal surface in a vacuum prior to depositing amorphous silicon. This process meticulously cleans and reconstructs the surface, preventing the undesirable nucleation of polycrystalline silicon (which is a source of defects) at the critical interface. A pristine surface promotes controlled, defect-free regrowth.\n\nThird, in some cases, the patent suggests implanting nucleation-promoting species to strategically enhance the nucleation of polycrystalline silicon *away* from the single crystalline region. This diverts potential defect formation to non-critical areas, thereby safeguarding the integrity of the core single crystal material. These combined approaches ensure robust defect control.","question":"How does Method to Improve Crystalline Regrowth work?"},{"answer":"The **Method to Improve Crystalline Regrowth** solves the critical problem of dislocation migration into pristine single crystal material during semiconductor fabrication. In the manufacturing of advanced microchips, new layers (like conductive straps) are grown or deposited onto a highly ordered single crystal substrate. A common and costly issue is that structural imperfections, known as dislocations, can form in these new layers or at their interfaces and then propagate into the underlying, perfect single crystal.\n\nThese migrating dislocations are not merely cosmetic flaws; they act as severe electrical defects. They can introduce unwanted leakage currents, reduce carrier mobility, and cause shifts in device operating parameters. Ultimately, these defects lead to reduced manufacturing yields (fewer functional chips per wafer), increased production costs, and degraded device performance and reliability for the end-user.\n\nBy providing a robust method to prevent this dislocation propagation, the invention directly addresses a fundamental bottleneck in achieving higher quality, more efficient, and more reliable electronic components. It moves the industry towards a more predictable and controlled fabrication process for critical materials.","question":"What problem does Method to Improve Crystalline Regrowth solve?"},{"answer":"The patent for **Method to Improve Crystalline Regrowth** (US-9853055) does not list inventors in the provided data. Patent filings typically include the names of the individuals who conceived the invention, referred to as the 'Inventors.' The 'Assignee' is the entity (often a company) to whom the inventors have assigned their ownership rights to the patent.\n\nWithout the specific inventor names, it is important to note that such innovations are often the result of collaborative research and development efforts within large corporations or research institutions. These teams typically comprise material scientists, electrical engineers, and process engineers who specialize in semiconductor fabrication and defect engineering.\n\nTo find the exact inventors, one would typically refer to the full patent document available from patent offices like the USPTO or through patent databases. This information is crucial for understanding the origin and intellectual lineage of such a groundbreaking technology within the semiconductor field. Keywords: patent inventors, patent assignee, semiconductor research, intellectual property.","question":"Who invented Method to Improve Crystalline Regrowth?"},{"answer":"The **Method to Improve Crystalline Regrowth** offers several significant benefits that impact both semiconductor manufacturers and end-users of electronic devices.\n\nFirst and foremost, it leads to **higher manufacturing yields**. By effectively preventing crystal defects, more functional chips can be produced from each silicon wafer, directly reducing production costs and increasing profitability for manufacturers. This efficiency gain is crucial in a highly competitive industry.\n\nSecondly, devices fabricated using this technology exhibit **enhanced performance and reliability**. Fewer dislocations mean reduced leakage currents, improved carrier mobility, and more stable electrical characteristics. This translates to faster, more energy-efficient, and longer-lasting electronic products for consumers, from smartphones to high-performance computing systems.\n\nFinally, this innovation serves as an **enabling technology for future advancements**. As chip geometries continue to shrink and new materials are explored (e.g., for AI, 5G, and quantum computing), the need for pristine crystalline structures becomes even more critical. The Method to Improve Crystalline Regrowth provides a foundational capability that allows for the development and mass production of these next-generation devices, pushing the boundaries of what technology can achieve. Keywords: semiconductor benefits, higher yields, device performance, chip reliability, future technology, manufacturing efficiency.","question":"What are the key benefits of Method to Improve Crystalline Regrowth?"},{"answer":"The **Method to Improve Crystalline Regrowth** distinguishes itself from prior art by offering a more proactive and targeted approach to defect control in semiconductor manufacturing. Traditional methods, such as Epitaxial Lateral Overgrowth (ELO), often involve complex patterning or are limited in their applicability, while strain engineering can be difficult to control precisely.\n\nPrior art often focuses on mitigating defects *after* they have formed or using global processes that may not be optimally targeted at critical interfaces. In contrast, this innovation actively *engineers the interface itself* to prevent dislocation migration from the outset. It creates a dedicated conductive barrier, which is a more direct and effective solution for stopping defects at their source.\n\nSpecifically, its use of carbon-based dislocation pinning (via implantation or Si:C layers) and precision vacuum annealing for surface passivation provides highly effective, localized defect engineering mechanisms. Furthermore, the concept of strategically implanting nucleation-promoting species to *divert* defect formation away from critical regions is a unique, intelligent approach not commonly found in earlier patents. These distinct methodologies provide superior efficacy, broader applicability, and ultimately a more cost-effective solution for achieving pristine crystalline structures. Keywords: patent differentiation, prior art comparison, defect control innovation, interface engineering, carbon pinning, vacuum annealing, semiconductor technology.","question":"How is Method to Improve Crystalline Regrowth different from prior art?"},{"answer":"The **Method to Improve Crystalline Regrowth** patent will have a profound impact across virtually all industries reliant on advanced semiconductor technology. Its primary influence will be felt in the **semiconductor manufacturing industry** itself, as foundries and integrated device manufacturers (IDMs) adopt these techniques to improve yields and product quality.\n\nBeyond manufacturing, it will significantly impact sectors that develop and utilize high-performance electronics. This includes the **consumer electronics industry**, leading to more durable, energy-efficient, and powerful smartphones, laptops, and smart devices. The **automotive sector** will benefit through more reliable chips for advanced driver-assistance systems (ADAS), electric vehicles, and autonomous driving, where component integrity is paramount.\n\nFurthermore, the **data center and artificial intelligence (AI) industries** will see gains from faster and more robust processors, enabling more efficient cloud computing and AI model training. Industries such as **aerospace and defense**, **telecommunications (e.g., 5G infrastructure)**, and **medical devices** will also leverage this technology for mission-critical applications requiring the highest levels of reliability and performance. This innovation is foundational, meaning its benefits will permeate any field driven by microelectronics. Keywords: semiconductor industry, consumer electronics, automotive tech, AI computing, aerospace defense, 5G infrastructure, medical devices, tech industry impact.","question":"What industries will Method to Improve Crystalline Regrowth impact?"},{"answer":"The patent for **Method to Improve Crystalline Regrowth** (US-9853055) was filed on **March 30, 2016**. The filing date is when the patent application was officially submitted to the patent office, marking the beginning of the patent prosecution process and establishing the priority date for the invention.\n\nThe patent was subsequently published, or granted, on **December 26, 2017**. The publication date is when the patent document becomes publicly accessible, detailing the claims, abstract, and description of the invention. This date signifies that the patent office has examined the application and determined that the invention meets the criteria for patentability, granting the patent holder exclusive rights for a specified period.\n\nThese dates are important for understanding the timeline of the innovation, its position relative to prior art, and when its intellectual property rights became enforceable. They also indicate the period during which the technology was developed and brought to a patentable stage. Keywords: patent filing date, patent publication date, US-9853055, intellectual property timeline, patent grant, invention history.","question":"When was Method to Improve Crystalline Regrowth filed/granted?"},{"answer":"The **Method to Improve Crystalline Regrowth** has broad commercial applications across the semiconductor industry, driven by its ability to produce higher quality, more reliable crystalline materials. Its primary application is in **advanced semiconductor fabrication**, where it will be used by foundries and Integrated Device Manufacturers (IDMs) to produce a wide range of components.\n\nSpecifically, it will be critical for manufacturing **high-performance processors** for personal computers, servers, and data centers, enabling faster speeds and greater energy efficiency. It is also highly applicable to **memory devices** (e.g., DRAM, NAND flash), where defect-free structures are essential for increased storage density and longevity. Furthermore, it will enhance the production of **power semiconductors**, such as those used in electric vehicles and renewable energy systems, by improving their efficiency and reliability under high stress.\n\nBeyond these core components, the technology will find applications in **advanced sensors** (e.g., image sensors, MEMS), **RF components for 5G and future communication systems**, and specialized **optoelectronic devices**. Any commercial product that demands exceptional material quality and reliability from its underlying semiconductor components will benefit from the implementation of this Method to Improve Crystalline Regrowth. Keywords: commercial applications, semiconductor fabrication, high-performance processors, memory devices, power semiconductors, advanced sensors, 5G components, optoelectronics.","question":"What are the commercial applications of Method to Improve Crystalline Regrowth?"},{"answer":"Looking ahead, the **Method to Improve Crystalline Regrowth** is expected to evolve and expand its impact through several key future developments. One major area of focus will likely be the **optimization and customization of the conductive barrier materials** for specific applications and new semiconductor materials. This could involve exploring novel impurity species, advanced Si:C alloy compositions, or entirely new barrier material systems tailored for extreme operating conditions or unique device architectures.\n\nFurther research will also likely concentrate on **integrating these techniques with in-situ monitoring and artificial intelligence (AI)**. Real-time feedback during growth processes, coupled with AI-driven optimization algorithms, could allow for dynamic adjustments to process parameters, achieving even higher levels of crystalline perfection and yield. This would lead to 'self-optimizing' fabrication processes.\n\nMoreover, the principles of this innovation are expected to be applied to **emerging technologies beyond traditional silicon**. This includes wide-bandgap semiconductors (like GaN and SiC) for power electronics, and novel materials for quantum computing, spintronics, and neuromorphic computing, where atomic-level defect control is absolutely critical for functionality. The Method to Improve Crystalline Regrowth is a foundational technology, and its future developments will likely push the boundaries of materials science, enabling entirely new classes of electronic devices and systems. Keywords: future developments, crystalline regrowth outlook, material optimization, AI in manufacturing, quantum computing materials, emerging technologies, semiconductor research, advanced materials.","question":"What are the future developments expected for Method to Improve Crystalline Regrowth?"}],"topics":["Method to Improve Crystalline Regrowth","crystalline regrowth","semiconductor manufacturing","dislocation inhibition","crystal defects","technical","unpacking","method"],"tech_cluster":null},"seo":{"title":"Method to Improve Crystalline Regrowth - Patent US-9853055","description":"Discover the Method to Improve Crystalline Regrowth patent (US-9853055), a breakthrough in semiconductor manufacturing that prevents crystal defects for higher yields and performance.","keywords":["Method to Improve Crystalline Regrowth","crystalline regrowth","semiconductor manufacturing","dislocation inhibition","crystal defects","silicon technology","chip fabrication","material science","patent US-9853055","high-performance computing","yield improvement","epitaxial growth"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853055","citation_suggestion":"Patentable. \"Method to improve crystalline regrowth\" (US-9853055). https://patentable.app/patents/US-9853055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853055","json":"https://patentable.app/api/llm-context/US-9853055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:45:13.300Z"}