{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853066","patent":{"patent_number":"US-9853066","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2015-07-27T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined."},"analysis":{"summary":"The patent titled \"Semiconductor Device and Manufacturing Method Thereof\" (US-9853066) introduces a groundbreaking approach to designing and manufacturing high-performance, energy-efficient transistors. Its core innovation lies in utilizing an intrinsic or substantially intrinsic oxide semiconductor layer, which fundamentally addresses the limitations of traditional silicon-based devices.\n\nThe primary problem this invention solves is the increasing power consumption and performance bottlenecks encountered as semiconductor devices continue to miniaturize. Conventional silicon transistors suffer from higher leakage currents and less precise control over electrical characteristics at smaller scales, leading to reduced battery life and increased heat generation in electronic devices.\n\nKey to this technology's approach is the use of an oxide semiconductor with a larger energy gap than silicon, inherently reducing unwanted electron flow and minimizing leakage. The manufacturing method meticulously removes electron donor impurities, ensuring the material remains as intrinsic as possible for optimal electrical properties. Furthermore, the patent describes a sophisticated dual-gate control mechanism: a pair of conductive films positioned on opposite sides of the oxide semiconductor layer, each separated by an insulating film. By controlling the potential of these films, the precise position of the channel formed within the oxide semiconductor can be dynamically determined and modulated.\n\nThis innovation offers significant business value through enhanced energy efficiency, improved device performance, and greater design flexibility. It enables the creation of electronic components with lower power consumption, higher switching speeds, and superior on/off ratios. Potential applications are vast, ranging from next-generation displays (e.g., for smartphones, TVs, AR/VR) that are brighter and more power-efficient, to high-performance computing (e.g., servers, AI accelerators) with reduced thermal loads, and extended battery life for portable and IoT devices.\n\nThe market opportunity for this technology is substantial, given the global demand for more powerful yet energy-conscious electronics. It positions companies to gain a competitive advantage by offering superior components that meet the evolving needs of various industries. This patent provides a robust foundation for building the next generation of semiconductors, promising a future of more capable, sustainable, and powerful electronic devices.","layman_explanation":"## Unlocking Next-Gen Performance: Understanding the Semiconductor Device and Manufacturing Method Thereof Patent\n\nIn today's digital economy, every business, regardless of its sector, relies heavily on electronic devices. From the smartphones in our pockets to the massive data centers powering cloud services, the core component enabling all this technology is the transistor. For decades, silicon has been the undisputed king of transistors, but its limitations are becoming increasingly apparent, impacting everything from battery life to operational costs. The \"Semiconductor Device and Manufacturing Method Thereof\" patent offers a compelling solution to these evolving challenges.\n\n### What Problem Does This Solve?\n\nImagine running a fleet of delivery vehicles that constantly waste fuel, even when idling. That's a bit like what happens with traditional silicon transistors in our electronic devices. As these transistors get smaller and more numerous, they tend to 'leak' electricity, even when they're supposed to be off. This leakage translates directly into wasted energy, leading to shorter battery life for mobile devices, increased heat generation in data centers (requiring more cooling, hence more energy), and overall less efficient performance. For businesses, this means higher operational expenses, shorter product lifecycles, and environmental concerns. Existing solutions often involve complex workarounds or compromises between speed and power, leaving a significant gap for a truly efficient and controllable transistor technology.\n\n### How Does It Work?\n\nThis patent introduces a fundamentally different approach, moving beyond the traditional silicon model. Instead, it utilizes a special material called an 'intrinsic oxide semiconductor.' Think of it like upgrading from a standard-grade fuel to a super-refined, high-octane version. This oxide semiconductor has a 'wider energy gap' than silicon, which in simple terms means it's much harder for electricity to accidentally 'leak' out when it shouldn't. It's like building a taller wall around your energy, keeping it contained until you deliberately open a gate.\n\nTo ensure this material performs optimally, the manufacturing method also focuses on making it incredibly pure, meticulously removing any tiny impurities that could cause unwanted leakage. This purification process is akin to ensuring your high-octane fuel is free of any contaminants that could reduce its efficiency.\n\nBut the real genius of this innovation lies in its 'dual-gate control.' Imagine you have a tiny river, and you want to precisely control where the water flows. Instead of just one gate to open and close, this invention places two independent 'gates' (conductive films) on either side of the oxide semiconductor. By subtly adjusting the electrical potential on both of these gates, you can precisely 'steer' and 'position' the flow of electricity (the channel) within the semiconductor. This unprecedented level of control allows for fine-tuning the transistor's behavior, making it incredibly efficient when off and powerful when on, much like having two highly responsive joysticks to control a delicate machine.\n\n### Why Does This Matter?\n\nThe business implications of this technology are profound. For companies in consumer electronics, it means designing smartphones, laptops, and wearables with significantly longer battery life, providing a strong competitive differentiator and enhancing customer satisfaction. For display manufacturers, it translates to brighter, more vibrant screens with reduced power consumption, ideal for premium products and emerging AR/VR applications. In the realm of cloud computing and data centers, adopting devices built with this technology could lead to substantial reductions in energy costs and cooling infrastructure, directly impacting profitability and sustainability goals.\n\nThis innovation offers a clear competitive advantage by enabling superior performance and energy efficiency that existing silicon technologies struggle to match. It creates opportunities for new product categories that might have been previously constrained by power limitations. The potential return on investment (ROI) stems from reduced operational expenditures, enhanced product value, and the ability to capture market share in high-growth segments demanding advanced semiconductor solutions.\n\n### What's Next?\n\nThe Semiconductor Device and Manufacturing Method Thereof patent lays a robust foundation for the next wave of electronic innovation. We can expect to see this technology integrated into a wide array of devices over the next 5-10 years, starting with high-end displays and specialized IoT applications, then progressively moving into mainstream computing. For investors, understanding this shift is crucial, as companies that successfully adopt or license this technology are poised for significant growth. It's not just about incremental improvements; it's about enabling a future of more powerful, more sustainable, and ultimately, more capable electronic devices across all industries.","technical_analysis":"The patent \"Semiconductor Device and Manufacturing Method Thereof\" (US-9853066) presents a significant advancement in transistor technology, focusing on a novel material system and device architecture designed to overcome the inherent limitations of conventional silicon-based devices, particularly concerning power efficiency and precise electrical control.\n\n**Technical Architecture and Material Science:**\nAt the heart of this innovation is the utilization of an intrinsic or substantially intrinsic oxide semiconductor layer. Unlike traditional silicon, which is typically doped to achieve n-type or p-type conductivity, the intrinsic nature of the oxide semiconductor minimizes unintentional doping effects, leading to superior control over carrier concentration. The abstract explicitly states that this oxide semiconductor possesses a larger energy gap (bandgap) than silicon. A wider bandgap is critical for reducing off-state leakage currents (I_off) by increasing the energy barrier for electrons to transition from the valence band to the conduction band, thereby significantly improving the on/off current ratio and reducing static power consumption. The patent also specifies the inclusion of a crystalline region within the surface portion of the oxide semiconductor layer. This crystallinity is crucial for enhancing carrier mobility and reducing trap states at the semiconductor-insulator interface, leading to faster device operation and improved long-term reliability compared to amorphous oxide semiconductors.\n\n**Implementation Details and Purification:**\nCentral to achieving the desired intrinsic properties is a meticulous manufacturing method that involves the removal of impurities acting as electron donors. These donor impurities, if present, would introduce free electrons, shifting the Fermi level closer to the conduction band and making the material n-type, thus compromising its intrinsic behavior and increasing leakage. The purification process is paramount and likely involves advanced material synthesis techniques (e.g., atomic layer deposition (ALD), pulsed laser deposition (PLD), sputtering with high-purity targets), followed by optimized annealing steps to activate the crystalline regions and remove unwanted defects or impurities. The precise control over stoichiometry and defect engineering is essential to maintain the large energy gap and intrinsic carrier concentration.\n\n**Algorithm Specifics: Dual-Gate Channel Control:**\nPerhaps the most innovative aspect is the sophisticated mechanism for controlling the electrical characteristics. The device incorporates a pair of conductive films, positioned on opposite sides of the oxide semiconductor layer, each separated by an insulating film (dielectric). This forms a dual-gate or double-gate transistor architecture. By independently controlling the potential (voltage) applied to these top and bottom conductive films, the electrostatic potential profile within the oxide semiconductor layer can be precisely modulated. This allows for the dynamic determination and fine-tuning of the channel's position. In conventional single-gate MOSFETs, the channel is formed at the interface with the single gate dielectric. With this dual-gate approach, the channel can be formed at either interface, or even in the bulk of the semiconductor, depending on the relative potentials of the two gates. This provides: \n1. **Enhanced Gate Control:** Superior control over the channel allows for a steeper subthreshold swing (SS), which translates to a faster transition from off-state to on-state and lower power consumption.\n2. **Threshold Voltage (Vth) Tuning:** The dual gates enable precise adjustment of Vth, allowing for optimization of device performance for various applications (e.g., low-power vs. high-speed).\n3. **Volume Inversion/Depletion:** Depending on the biasing, it might be possible to achieve volume inversion, where the entire bulk of the intrinsic semiconductor contributes to conduction, potentially leading to higher drive currents or novel device physics.\n\n**Integration Patterns and Performance Characteristics:**\nThis device architecture is highly suitable for integration into thin-film transistor (TFT) arrays, commonly found in active-matrix displays (LCD, OLED). The intrinsic nature and wide bandgap of the oxide semiconductor make it suitable for transparent electronics. The enhanced control implies improved reliability and uniformity across large-area substrates. Performance characteristics would include: significantly reduced off-state current (I_off), high on/off current ratios (>10^8), low operating voltage, and potentially high electron mobility due to the crystalline surface region. The ability to precisely control the channel position also implies improved immunity to short-channel effects, crucial for future scaling.\n\n**Code-Level Implications:**\nWhile this patent is hardware-centric, its implications for software and firmware development are significant. For developers designing power-constrained systems, the inherent energy efficiency of these transistors allows for more complex algorithms and longer operational periods without external power. For display driver ICs, the precise control over individual pixel transistors could enable more sophisticated display technologies, requiring optimized control algorithms. Furthermore, the robust and stable characteristics of devices built with this technology may simplify error correction and reliability considerations in embedded systems, allowing for more streamlined and efficient code bases.","business_analysis":"The patent \"Semiconductor Device and Manufacturing Method Thereof\" (US-9853066) represents a pivotal advancement in semiconductor technology, poised to generate substantial business impact across several high-growth sectors. Its core innovation, centered on intrinsic oxide semiconductors and advanced channel control, addresses critical industry pain points, creating significant market opportunities and competitive advantages.\n\n**Market Opportunity Size:**\nThe global semiconductor market, valued at over $500 billion annually, is driven by an insatiable demand for more powerful, smaller, and energy-efficient electronic components. This innovation directly targets the transistor segment, a fundamental building block of all modern electronics. Key growth areas where this technology can thrive include:\n\n*   **Advanced Displays:** The market for high-resolution, low-power displays (OLED, micro-LED) in smartphones, tablets, TVs, and AR/VR devices is projected to reach hundreds of billions. This technology's superior on/off ratios and low leakage currents are ideal for display backplanes, enabling brighter, more responsive, and significantly more power-efficient screens.\n*   **Internet of Things (IoT) & Edge AI:** With billions of IoT devices expected to be deployed, energy efficiency is paramount for battery-powered sensors and edge processors. The reduced power consumption offered by this patent is a game-changer for extending device longevity and enabling always-on functionality.\n*   **High-Performance Computing (HPC) & Data Centers:** As data centers grapple with escalating energy costs and thermal management challenges, transistors with lower leakage and improved efficiency can lead to substantial operational savings and greener computing.\n*   **Wearables & Mobile Devices:** Longer battery life and enhanced performance are continuous drivers in the mobile and wearable markets, where this technology can provide a significant competitive edge.\n\n**Competitive Advantages:**\nThis innovation offers several distinct competitive advantages over existing and emerging technologies:\n\n*   **Superior Energy Efficiency:** The intrinsic oxide semiconductor with a larger energy gap fundamentally reduces leakage currents, leading to lower static and dynamic power consumption compared to silicon MOSFETs or conventional oxide TFTs.\n*   **Precise Control:** The dual-gate control mechanism provides an unprecedented level of granularity in tuning transistor characteristics, allowing for optimized performance across diverse applications and enabling novel device functionalities.\n*   **Enhanced Performance & Reliability:** The crystalline region in the surface portion of the oxide semiconductor contributes to higher carrier mobility and improved device stability, crucial for demanding applications.\n*   **Material Versatility:** Oxide semiconductors can be processed at lower temperatures and are compatible with flexible substrates, opening doors for new form factors and transparent electronics.\n\n**Revenue Potential and Business Models:**\nCompanies leveraging this patent could unlock substantial revenue streams through:\n\n*   **Licensing:** Licensing the patented technology to major semiconductor manufacturers, display makers, and fabless design houses.\n*   **Component Sales:** Manufacturing and selling specialized oxide semiconductor transistors or integrated circuits (ICs) based on this architecture.\n*   **Product Differentiation:** Integrating this technology into proprietary products (e.g., advanced displays, custom ASICs) to create premium offerings with superior power efficiency and performance.\n\n**Strategic Positioning:**\nThis patent positions its adopters at the forefront of next-generation semiconductor innovation. It allows companies to:\n\n*   **Lead in Green Electronics:** Address growing environmental concerns by offering truly energy-efficient components.\n*   **Innovate New Product Categories:** Enable devices and applications previously limited by power budgets or performance constraints.\n*   **Reduce Manufacturing Costs (long-term):** While initial R&D may be high, the potential for simplified device structures and lower temperature processing could lead to cost efficiencies in the long run, especially for large-area electronics.\n\n**ROI Projections:**\nInvestment in developing and commercializing this technology promises a strong return. The ability to deliver components with significantly lower power consumption and higher performance translates directly into:\n\n*   **Increased Market Share:** Capturing segments demanding high efficiency.\n*   **Higher Average Selling Prices (ASPs):** Premium performance justifies premium pricing.\n*   **Reduced R&D Cycles:** Providing a robust foundational technology that can be adapted for multiple product generations.\n*   **Sustainability Benefits:** Meeting regulatory and consumer demands for environmentally friendly products.\n\nIn essence, the Semiconductor Device and Manufacturing Method Thereof patent is not merely a technical curiosity but a strategic asset that can redefine competitive landscapes, open new markets, and drive significant economic value in the global electronics industry.","faqs":[{"answer":"The \"Semiconductor Device and Manufacturing Method Thereof\" (US-9853066) is a patent describing a novel approach to creating high-performance, energy-efficient transistors. At its core, this innovation utilizes an intrinsic or substantially intrinsic oxide semiconductor layer, which is a type of material with unique electrical properties that offer significant advantages over traditional silicon.\n\nUnlike conventional semiconductors that rely heavily on doping to control conductivity, this technology focuses on maintaining a very pure, intrinsic state of the oxide semiconductor. This purity, combined with a larger energy gap compared to silicon, is key to minimizing unwanted electrical leakage. The patent also details a precise manufacturing method to achieve these material characteristics, including the formation of a crystalline region in the surface portion of the oxide semiconductor layer.\n\nFurthermore, a standout feature of this invention is its sophisticated dual-gate control mechanism. It involves a pair of conductive films placed on opposite sides of the oxide semiconductor layer, each separated by an insulating film. By controlling the electrical potential of these films, the precise position of the channel (the pathway for current flow) within the semiconductor can be dynamically determined and modulated, leading to superior control over the transistor's electrical characteristics. This allows for fine-tuning the transistor's behavior for optimal performance and efficiency in various applications. This system is designed to overcome the limitations of current transistor technologies, paving the way for more advanced and sustainable electronic devices.","question":"What is Semiconductor Device and Manufacturing Method Thereof?"},{"answer":"The Semiconductor Device and Manufacturing Method Thereof operates on several innovative principles. Firstly, it uses an intrinsic oxide semiconductor material that has a wider energy gap than silicon. This larger energy gap means that electrons require more energy to move into the conduction band, significantly reducing the 'off-state' leakage current—the unwanted flow of electricity when the transistor is supposed to be inactive. This inherent property makes the device much more energy-efficient.\n\nSecondly, the manufacturing method is critical in ensuring the material's purity. It specifically describes processes for removing impurities that act as electron donors. These donors, if present, would introduce free electrons and compromise the intrinsic nature of the oxide semiconductor, leading to increased leakage. By meticulously purifying the material, the patent ensures the desired electrical characteristics are achieved and maintained. Additionally, a crystalline region is formed in the surface portion of the oxide semiconductor layer, which helps to improve carrier mobility and device stability.\n\nFinally, the most distinctive operational feature is the dual-gate control. The device incorporates two conductive films, each acting as a gate electrode, positioned on opposite sides of the oxide semiconductor layer and separated by insulating films. By independently applying voltage to these top and bottom gates, the electrostatic field across the semiconductor can be precisely shaped. This allows engineers to dynamically control the exact position of the electrical channel within the oxide layer. This fine-grained control enables superior tuning of the transistor's threshold voltage, subthreshold swing, and overall switching behavior, leading to enhanced performance, lower power consumption, and greater design flexibility.","question":"How does Semiconductor Device and Manufacturing Method Thereof work?"},{"answer":"The Semiconductor Device and Manufacturing Method Thereof patent primarily solves the critical challenges associated with power consumption and performance limitations in modern semiconductor devices, especially as they continue to shrink in size.\n\nTraditional silicon-based transistors, while foundational, inherently suffer from increased leakage currents as their dimensions are scaled down. This 'leakage' means that even when a transistor is 'off,' a small amount of electricity still flows, wasting energy and generating heat. This leads to shorter battery life in portable devices, higher energy bills for data centers, and thermal management complexities in high-performance computing. Existing solutions often involve compromises between speed, power, and cost, failing to fully address these fundamental issues.\n\nThis innovation tackles these problems head-on by introducing a design that inherently minimizes leakage through its intrinsic oxide semiconductor material with a larger energy gap. Furthermore, the dual-gate control mechanism provides an unprecedented level of precision in modulating the transistor's electrical characteristics. This overcomes the limitations of single-gate control, which struggles to maintain optimal performance and efficiency at advanced technology nodes. By solving these core issues, this technology paves the way for electronic devices that are significantly more energy-efficient, perform better, and offer greater design flexibility, meeting the escalating demands of modern technology.","question":"What problem does Semiconductor Device and Manufacturing Method Thereof solve?"},{"answer":"The inventors for the \"Semiconductor Device and Manufacturing Method Thereof\" patent (US-9853066) are not specified in the provided patent data. However, the assignee, which is the entity or company to whom the patent rights are legally transferred, would typically be a technology company or research institution deeply involved in semiconductor R&D and manufacturing.\n\nIn the semiconductor industry, innovations of this magnitude often come from teams of highly specialized engineers and scientists working within corporate research labs or university-affiliated programs. These teams typically comprise experts in material science, device physics, process engineering, and electrical engineering, collaboratively pushing the boundaries of what's possible in microelectronics.\n\nThe absence of inventor names in this specific abstract is not uncommon for public-facing summaries. The focus is usually on the technology itself and its implications. However, the assignee (if provided) would indicate the organization that owns the rights to this significant intellectual property. This kind of patent represents a substantial investment in research and development, highlighting a strategic focus on next-generation transistor technologies by the owning entity.","question":"Who invented Semiconductor Device and Manufacturing Method Thereof?"},{"answer":"The Semiconductor Device and Manufacturing Method Thereof patent offers several key benefits that are set to revolutionize various sectors of the electronics industry:\n\nFirstly, **superior energy efficiency** is a primary advantage. By utilizing an intrinsic oxide semiconductor with a larger energy gap than silicon and meticulously removing electron donor impurities, this technology drastically reduces off-state leakage currents. This translates directly into significantly lower power consumption for electronic devices, leading to extended battery life for portable gadgets and substantial energy savings for large-scale computing infrastructure like data centers.\n\nSecondly, it provides **unprecedented control over transistor characteristics**. The innovative dual-gate structure, with conductive films on opposite sides of the semiconductor, allows for precise determination and modulation of the channel's position. This fine-grained control enables engineers to optimize the transistor's performance for specific applications, achieving ideal on/off ratios, faster switching speeds, and a sharper transition between states. This level of control surpasses that of traditional single-gate designs, leading to more stable and predictable device operation.\n\nThirdly, the inclusion of a **crystalline region in the surface portion** of the oxide semiconductor layer enhances carrier mobility and device reliability. This structural improvement contributes to faster operation and greater long-term stability compared to amorphous semiconductor materials. Collectively, these benefits position the Semiconductor Device and Manufacturing Method Thereof as a foundational technology for creating next-generation electronic devices that are not only more powerful and responsive but also significantly more sustainable and capable of meeting future technological demands.","question":"What are the key benefits of Semiconductor Device and Manufacturing Method Thereof?"},{"answer":"The \"Semiconductor Device and Manufacturing Method Thereof\" patent distinguishes itself from prior art (existing technologies) primarily through its choice of material and its unique device architecture.\n\n**Material Difference:** Traditional transistors largely rely on silicon, which, despite its widespread use, faces inherent limitations in minimizing leakage currents and maximizing energy efficiency as devices shrink. Many prior art oxide semiconductor technologies, while an improvement over amorphous silicon, often still contend with challenges related to material purity or achieving true intrinsic behavior. This patent, however, emphasizes an *intrinsic or substantially intrinsic oxide semiconductor* with a *larger energy gap than silicon*. This is a fundamental difference: the intrinsic nature and wider bandgap inherently lead to significantly lower off-state leakage currents and higher energy efficiency compared to both silicon and many earlier oxide semiconductor designs. The meticulous removal of electron donor impurities further ensures this material superiority.\n\n**Architectural Difference (Dual-Gate Control):** Most prior art transistors, including conventional silicon MOSFETs and many early oxide TFTs, utilize a single-gate structure. This provides limited control over the electrical channel. In contrast, this invention employs a *dual-gate architecture*, featuring conductive films on *opposite sides* of the oxide semiconductor. This dual control allows for precise determination and dynamic modulation of the channel's position within the semiconductor. This offers a level of control that is superior to single-gate designs, leading to steeper subthreshold swing, tunable threshold voltage, and enhanced immunity to short-channel effects. This improved electrostatic control allows for more optimized performance and greater design flexibility than commonly found in prior art, setting a new benchmark for transistor capabilities.","question":"How is Semiconductor Device and Manufacturing Method Thereof different from prior art?"},{"answer":"The Semiconductor Device and Manufacturing Method Thereof patent is poised to significantly impact several key industries, driving innovation and enabling new product capabilities across the electronics landscape.\n\nFirstly, the **Display Industry** stands to benefit immensely. The patent's focus on high-performance, low-leakage transistors is ideal for active-matrix backplanes in advanced displays such as OLED, Micro-LED, and future display technologies. This will enable the creation of screens for smartphones, tablets, televisions, and augmented/virtual reality (AR/VR) devices that are significantly brighter, have higher resolutions, faster refresh rates, and consume dramatically less power. This translates to longer battery life for portable devices and more vibrant, efficient viewing experiences.\n\nSecondly, the **Internet of Things (IoT) and Wearables sectors** will see a transformative impact. With billions of IoT devices requiring long battery life and robust performance in diverse environments, the ultra-low power consumption and high stability offered by this technology are critical. It will facilitate the development of 'always-on' sensors, smart home devices, and advanced wearables that can operate for extended periods without recharging, reducing maintenance and expanding deployment possibilities.\n\nFinally, **High-Performance Computing (HPC) and Mobile Electronics** will also experience substantial improvements. Reduced leakage and enhanced efficiency mean that processors, memory, and other integrated circuits can operate faster and with less heat generation. This leads to more powerful yet cooler-running servers in data centers, significant energy cost savings, and extended battery life for laptops and other mobile computing devices. The Semiconductor Device and Manufacturing Method Thereof is thus a foundational technology that will permeate across the entire spectrum of modern electronics, enabling a new generation of more capable and sustainable devices.","question":"What industries will Semiconductor Device and Manufacturing Method Thereof impact?"},{"answer":"The patent titled \"Semiconductor Device and Manufacturing Method Thereof\" (US-9853066) has a recorded filing date and publication date.\n\nThe **Filing Date** for this patent was **2015-07-27**. This is the date when the application for the invention was officially submitted to the patent office, marking the beginning of the patent prosecution process. The filing date is crucial as it typically establishes the priority date for the invention, meaning that the invention's novelty and non-obviousness are judged against the prior art existing before this date.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent document was officially published by the patent office, making its full details publicly accessible. While the filing date is when the application is submitted, the publication date is when the public can review the detailed description, claims, and drawings of the invention. This date is important for researchers, competitors, and the public to understand the scope and nature of the patented technology. The period between the filing and publication dates involves examination by the patent office, which can be a lengthy process.","question":"When was Semiconductor Device and Manufacturing Method Thereof filed/granted?"},{"answer":"The commercial applications of the \"Semiconductor Device and Manufacturing Method Thereof\" patent are extensive, primarily driven by its ability to create transistors that are significantly more energy-efficient and offer superior control. This technology is poised to address critical needs across various high-growth markets.\n\nOne major application area is **advanced display technologies**. This includes active-matrix backplanes for OLED (Organic Light-Emitting Diode) and Micro-LED displays found in smartphones, tablets, smartwatches, televisions, and augmented/virtual reality (AR/VR) headsets. The low leakage current and precise control enable brighter, higher-resolution panels with faster refresh rates and dramatically reduced power consumption, leading to longer battery life for portable devices and more vibrant visual experiences.\n\nAnother significant application is in the **Internet of Things (IoT) and edge computing devices**. Billions of IoT sensors, smart home devices, and industrial monitors require components that can operate for extended periods on minimal power. The ultra-low power consumption provided by this technology is ideal for 'always-on' applications, enabling longer battery life (potentially years), reducing maintenance costs, and expanding the feasibility of deploying devices in remote or hard-to-reach locations. This also supports more powerful edge AI processing where energy budgets are extremely tight.\n\nFurthermore, this innovation has strong commercial potential in **high-performance computing (HPC) and mobile electronics**. Processors, memory, and other integrated circuits built with these transistors can achieve higher performance with less heat generation and lower energy consumption. This translates to more powerful yet energy-efficient laptops and smartphones, as well as substantial operational cost savings and reduced environmental impact for data centers. The Semiconductor Device and Manufacturing Method Thereof is thus a versatile technology that can enhance a wide range of electronic products, offering a competitive edge to companies that adopt it.","question":"What are the commercial applications of Semiconductor Device and Manufacturing Method Thereof?"},{"answer":"Future developments for the Semiconductor Device and Manufacturing Method Thereof patent are expected to focus on further optimization, broader integration, and the exploration of novel applications, building upon its foundational advancements in intrinsic oxide semiconductors and dual-gate control.\n\nOne key area of development will likely be **material refinement and process optimization**. Researchers will continue to explore different compositions of oxide semiconductors to further enhance carrier mobility, increase the energy gap, and improve long-term stability. Manufacturing processes will be fine-tuned to achieve even greater purity, more uniform crystalline regions, and lower temperature processing, which is crucial for compatibility with flexible substrates and larger display panels. This will include advancements in deposition techniques, annealing strategies, and interface engineering to minimize defects and maximize performance.\n\nAnother significant direction involves **circuit integration and architectural innovation**. As the core transistor technology matures, efforts will shift towards integrating these devices into more complex integrated circuits. This could include developing advanced memory arrays, sophisticated display driver ICs, or even novel logic architectures that fully leverage the dynamic channel control capabilities of the dual-gate design. We might see the emergence of adaptive circuits that can dynamically adjust their power and performance characteristics based on workload, thanks to the precise control offered by this technology.\n\nFinally, **exploration of new application spaces** is anticipated. Beyond current applications in displays and IoT, this technology's unique attributes—such as potential transparency, flexibility, and extreme energy efficiency—could open doors to entirely new product categories. This includes wearable electronics with seamless integration into fabrics, transparent computing devices, or highly efficient sensors for biomedical applications. The Semiconductor Device and Manufacturing Method Thereof provides a robust platform for continuous innovation, enabling a future where electronics are not only more powerful but also more versatile, sustainable, and deeply integrated into our daily lives.","question":"What are the future developments expected for Semiconductor Device and Manufacturing Method Thereof?"}],"topics":["semiconductor device","manufacturing method","oxide semiconductor","intrinsic semiconductor","transistor technology","technical","semiconductor","device"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Manufacturing Method Thereof - Patent US-9853066","description":"Discover US-9853066: Semiconductor Device and Manufacturing Method Thereof, a patent for high-performance, energy-efficient transistors with intrinsic oxide semiconductors and dual-gate control. Full analysis.","keywords":["semiconductor device","manufacturing method","oxide semiconductor","intrinsic semiconductor","transistor technology","energy-efficient electronics","dual-gate control","high-performance computing","display technology","patent US-9853066","semiconductor innovation","low-power transistors","channel control","wide bandgap"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853066","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853066","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9853066). https://patentable.app/patents/US-9853066","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853066","json":"https://patentable.app/api/llm-context/US-9853066","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:34:23.194Z"}