{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853069","patent":{"patent_number":"US-9853069","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-06-22T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","G02F","G02F","G09G","G09G","G09G","G09G","G09G","G09G","G09G","G11C"],"num_claims":22,"abstract":"An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer."},"analysis":{"summary":"The patent titled \"Method for Manufacturing Semiconductor Device\" (US-9853069) presents a novel and highly refined processing technique for manufacturing semiconductor devices that incorporate oxide semiconductors. The core innovation addresses the critical need for precise and damage-free patterning of these advanced materials, which are increasingly vital for next-generation displays, memory, and other electronic components. The primary objective of this invention is to establish a robust and repeatable manufacturing process that overcomes the limitations of prior art, which often struggled with the delicate nature of oxide semiconductors during etching.\n\nAt its heart, this method involves a meticulous sequence of steps. Initially, a gate electrode is formed over a substrate, followed by a gate insulating layer. A key step is the deposition of an oxide semiconductor layer. This layer is then precisely processed using wet etching to form an island-shaped structure. This choice of wet etching is crucial for minimizing damage to the sensitive oxide material and achieving smooth, uniform surfaces. Following this, a conductive layer is formed over the island and subsequently processed by dry etching to define the source and drain electrodes, leveraging dry etching's ability to create sharp, anisotropic features. A particularly innovative aspect is the subsequent removal of a portion of the island-shaped oxide semiconductor layer by dry etching, creating a recessed portion. This recessed structure is engineered to optimize the electrical characteristics of the device, such as improving gate control and reducing parasitic effects.\n\nThe business value of this patent is significant. By enabling the precise and reliable fabrication of oxide semiconductor devices, this technology paves the way for higher manufacturing yields, improved device performance, and enhanced reliability. It directly supports the development of cutting-edge products like high-resolution, energy-efficient displays (e.g., OLEDs, flexible displays) and advanced memory solutions. The market opportunity lies in licensing this robust manufacturing process to semiconductor foundries and device manufacturers, providing them with a competitive edge in a rapidly evolving industry. This innovation is poised to accelerate the adoption of oxide semiconductors across a wide array of electronic applications, from consumer electronics to industrial IoT.","layman_explanation":"### What Problem Does This Solve?\nImagine you're trying to build the most intricate, high-performance gadgets – think ultra-sharp displays for your TV, flexible screens for your wearable tech, or lightning-fast memory chips. These cutting-edge devices rely on incredibly tiny components made from advanced materials, specifically 'oxide semiconductors.' These materials are fantastic because they conduct electricity really well and can be transparent, but they're also incredibly delicate. The traditional ways we've manufactured these tiny parts often involve harsh processes that can damage these sensitive materials, leading to imperfect devices, higher manufacturing costs due to waste, and limitations on how small and powerful we can make things. It's like trying to sculpt a delicate glass figurine with a jackhammer – you might get the shape, but it'll be full of cracks.\n\n### How Does It Work?\nThe \"Method for Manufacturing Semiconductor Device\" patent introduces a much smarter, more gentle, yet highly precise way to 'sculpt' these delicate oxide semiconductor components. Think of it as a two-stage art project. First, after laying down the foundational layers (like the base and a control 'gate'), a layer of the sensitive oxide semiconductor is applied. Instead of aggressively carving it, the process uses a 'wet etching' technique – imagine a very gentle, precise chemical wash that carefully dissolves away only the unwanted parts, leaving behind perfect, island-shaped structures. This is like using a fine brush to paint away excess material without damaging the sculpture itself. Then, after adding a conductive layer for electrical connections, a 'dry etching' technique is used. This is more like a highly controlled laser or plasma beam that precisely cuts out the electrical connections (source and drain electrodes). The real genius of this innovation is a final, targeted dry etching step that creates a tiny 'recessed portion' within the oxide semiconductor island. This recess isn't just a dent; it's an engineered feature that optimizes how electricity flows, making the tiny component work even better and more reliably. It's like adding a perfectly shaped groove to a race track to make the cars go faster and stay on course.\n\n### Why Does This Matter?\nThis innovation fundamentally changes how we approach the manufacturing of critical electronic components. By enabling the precise and damage-free fabrication of oxide semiconductor devices, the \"Method for Manufacturing Semiconductor Device\" offers significant advantages. For businesses, this means higher manufacturing yields – fewer defective products and less waste, directly translating to lower production costs. It also means superior product performance; devices built with this method will be faster, more reliable, and consume less power. This opens up massive market opportunities in areas like high-resolution, energy-efficient displays for smartphones, tablets, and large-screen TVs; flexible electronics for wearables and IoT devices; and advanced non-volatile memory chips. Companies adopting this patented approach will gain a strong competitive advantage, being able to deliver next-generation products that outperform rivals and capture new market segments. The potential return on investment (ROI) comes from reduced operational costs, increased product quality, and the ability to innovate faster than the competition.\n\n### What's Next?\nThe implications of this patent are far-reaching. We can expect to see this advanced manufacturing method become a standard in the production of cutting-edge displays, enabling even thinner, lighter, and more vibrant screens. It will also accelerate the development of flexible and transparent electronics, pushing the boundaries of device form factors. For the broader semiconductor industry, this technology provides a robust pathway for integrating new materials, fostering further innovation in device architecture and performance. Investors should look for companies that are either licensing this technology or are actively developing products that leverage advanced oxide semiconductor fabrication, as these are likely to be the leaders in the next wave of electronic innovation. This patent is a crucial stepping stone towards a future filled with more powerful, efficient, and seamlessly integrated smart devices.","technical_analysis":"The \"Method for Manufacturing Semiconductor Device\" patent (US-9853069) details a sophisticated fabrication process specifically designed to overcome the inherent challenges associated with integrating oxide semiconductors into high-performance electronic devices. This technical analysis delves into the architectural considerations, implementation specifics, and performance implications of this innovative approach.\n\n**Technical Architecture and Process Flow:**\nThe invention outlines a sequential, multi-stage process flow, carefully orchestrating deposition and etching techniques to achieve precise device geometries. The fundamental architecture involves:\n1.  **Substrate and Gate Stack Formation**: A substrate forms the base, followed by the deposition and patterning of a gate electrode. Subsequently, a gate insulating layer is formed over the gate electrode. This stack provides the foundational control element for the subsequent transistor structure.\n2.  **Oxide Semiconductor Layer Deposition**: A uniform oxide semiconductor layer, critical for the active channel, is deposited over the gate insulating layer. The material choice (e.g., IGZO) is crucial for desired electrical properties.\n3.  **Island-Shaped Oxide Semiconductor Layer Formation via Wet Etching**: This is a pivotal step. Unlike conventional approaches that might rely solely on dry etching, this method employs *wet etching* to process the oxide semiconductor layer into an island shape. Wet etching is preferred here for its high selectivity, low damage to the sensitive oxide material, and ability to produce smooth sidewalls, which minimizes surface scattering and preserves the intrinsic electronic properties of the semiconductor.\n4.  **Conductive Layer Deposition**: A conductive layer, typically a metal, is deposited to cover the newly formed island-shaped oxide semiconductor layer. This layer will form the source and drain contacts.\n5.  **Source and Drain Electrode Formation via Dry Etching**: The conductive layer is then patterned and processed by *dry etching* (e.g., Reactive Ion Etching - RIE). Dry etching is chosen at this stage for its anisotropic nature, allowing for the precise definition of the source and drain electrodes with sharp, vertical sidewalls and excellent critical dimension control. This is crucial for minimizing contact resistance and ensuring proper device scaling.\n6.  **Recessed Portion Formation via Dry Etching**: A distinctive and performance-enhancing feature of this invention is the subsequent removal of a specific part of the island-shaped oxide semiconductor layer using *dry etching* to create a recessed portion. This step is critical for optimizing the electric field distribution within the transistor channel. By creating a recess, it's possible to reduce parasitic capacitance at the gate-drain overlap, enhance gate control over the channel, and potentially mitigate short-channel effects. The controlled dry etching at this stage must be carefully tuned to ensure precise depth and minimal damage to the remaining oxide semiconductor material.\n\n**Implementation Details and Algorithm Specifics:**\n*   **Etchant Chemistry**: For wet etching of oxide semiconductors, dilute acid solutions or specific organic etchants are typically employed, chosen for their selectivity and minimal surface roughness. For dry etching, plasma chemistries involving fluorine or chlorine-based gases are common for conductive layers, while specific gas mixtures (e.g., CH4/H2 or BCl3/Cl2) might be used for etching oxide semiconductors in the recessed portion step, requiring careful optimization to balance etch rate, selectivity, and damage.\n*   **Process Control**: Critical parameters include etch time, temperature, etchant concentration (for wet etching), and plasma power, gas flow rates, and pressure (for dry etching). Precision control over these variables is paramount to ensure reproducibility and uniformity across the wafer.\n*   **Photolithography**: High-resolution photolithography techniques are implicitly required at various stages to define the patterns for the gate electrode, oxide semiconductor island, and source/drain electrodes.\n\n**Performance Characteristics and Code-Level Implications:**\nThis method directly impacts device performance by:\n*   **Reduced Process-Induced Damage**: The strategic use of wet etching for the main oxide semiconductor body minimizes plasma-induced damage, leading to higher electron mobility and lower subthreshold swing.\n*   **Improved Interface Quality**: Smoother sidewalls from wet etching and controlled recess formation enhance the interface quality between the oxide semiconductor and surrounding layers, reducing trap states.\n*   **Optimized Electrical Characteristics**: The recessed portion can significantly improve gate control, reduce off-currents, and enhance the on/off ratio, leading to more energy-efficient and faster switching transistors. This translates to better display pixel performance and faster memory access times.\n\nFor engineers, the implications are profound. This patent provides a robust recipe for fabricating oxide semiconductor TFTs with superior characteristics, enabling the design of more advanced display backplanes, flexible electronics, and high-density memory arrays. The detailed etching sequence suggests a pathway for integrating these delicate materials into complex device architectures with higher yield and reliability, pushing the boundaries of what's possible in microelectronics.","business_analysis":"The \"Method for Manufacturing Semiconductor Device\" patent (US-9853069) represents a pivotal advancement in semiconductor fabrication, holding significant implications for various high-growth markets. This innovation specifically addresses the complex challenges of integrating oxide semiconductors, materials critical for the next generation of electronic devices. Understanding its commercial applications, competitive advantages, and market potential is key for executives and investors.\n\n**Market Opportunity Size:**\nThe global semiconductor market continues its robust expansion, driven by demand for advanced computing, communication, and display technologies. Within this, the market for displays, particularly OLED and flexible displays, is projected to reach hundreds of billions of dollars, with oxide semiconductor TFTs being a crucial enabling technology. Similarly, the demand for high-performance, low-power memory and sensors in IoT, AI, and automotive sectors presents vast opportunities. This patent directly targets these segments by improving the manufacturability and performance of components fundamental to their operation. The total addressable market for devices benefiting from this advanced manufacturing method is enormous, encompassing consumer electronics (smartphones, TVs, wearables), industrial applications, and specialized computing.\n\n**Competitive Advantages:**\nThis patent provides a distinct competitive edge by offering:\n1.  **Superior Device Performance**: The precise, damage-mitigated etching process leads to oxide semiconductor devices with higher electron mobility, lower leakage currents, and improved stability. This translates directly to better product performance (e.g., clearer, faster displays; more reliable memory).\n2.  **Enhanced Manufacturing Yields**: By reducing process-induced damage and improving uniformity, manufacturers can achieve significantly higher yields. This directly lowers per-unit production costs and accelerates time-to-market for new products.\n3.  **Enabling New Architectures**: The ability to reliably create complex features like recessed portions within the oxide semiconductor layer opens up design possibilities for more compact, efficient, and advanced transistor structures that were previously difficult or impossible to achieve with high yield.\n4.  **Reduced R&D Costs for Future Products**: Having a proven, patented method for oxide semiconductor integration reduces the R&D investment required for companies developing next-generation products that rely on these materials.\n\n**Revenue Potential and Business Models:**\nRevenue generation from this patent could manifest through several business models:\n*   **Licensing**: Semiconductor equipment manufacturers and integrated device manufacturers (IDMs) could license the patented process for use in their fabrication facilities. This could involve upfront fees, per-wafer royalties, or a combination.\n*   **Joint Ventures/Partnerships**: Collaborating with leading foundries or display manufacturers to implement and optimize the process could create shared revenue streams.\n*   **Internal Product Development**: Companies owning or exclusively licensing this technology could leverage it to produce their own differentiated, high-performance semiconductor components, gaining market share and premium pricing.\n\n**Strategic Positioning:**\nCompanies adopting this technology will be strategically positioned at the forefront of advanced materials integration. It offers a defensive advantage by protecting core manufacturing know-how and an offensive advantage by enabling the creation of superior products. For players in the display industry, it's a pathway to continued innovation in screen quality and flexibility. For memory manufacturers, it offers a route to denser, faster, and more energy-efficient non-volatile memory. In the broader context of IoT and AI, where efficient processing at the edge is crucial, this patent contributes to the fundamental building blocks of future intelligent systems.\n\n**ROI Projections:**\nInvestment in adopting or licensing this technology could yield substantial ROI through:\n*   **Cost Savings**: Reduced scrap rates and higher yields translate directly to lower manufacturing costs.\n*   **Market Share Growth**: Superior product performance can lead to increased market penetration and customer loyalty.\n*   **Premium Pricing**: Differentiated products built with this advanced method can command higher prices.\n*   **Accelerated Innovation Cycle**: Faster and more reliable R&D for future products. Initial investments in process integration and optimization would be rapidly recouped through these gains, making this a highly attractive proposition for long-term growth in the semiconductor sector.","faqs":[{"answer":"The \"Method for Manufacturing Semiconductor Device\" is a patented innovation (US-9853069) that describes a highly precise and efficient technique for fabricating electronic components, specifically those utilizing oxide semiconductors. This invention focuses on overcoming the inherent challenges of processing delicate oxide materials, which are crucial for next-generation displays, memory, and other advanced electronics.\n\nAt its core, this method involves a unique sequence of manufacturing steps. It starts with forming a gate electrode and a gate insulating layer over a substrate. Crucially, an oxide semiconductor layer is then deposited. The patent's ingenuity lies in its multi-stage etching process, which meticulously shapes this oxide semiconductor layer and integrates it with conductive elements.\n\nThis technology is designed to create more reliable, higher-performing semiconductor devices by carefully controlling the material removal processes, ensuring that the sensitive oxide semiconductor is not damaged during fabrication. It represents a significant advancement in the field of microelectronics manufacturing.","question":"What is Method for Manufacturing Semiconductor Device?"},{"answer":"The Method for Manufacturing Semiconductor Device works by employing a strategic combination of wet and dry etching techniques in a specific sequence to achieve optimal device structures without damaging sensitive oxide semiconductors. The process unfolds in several key stages:\n\nFirst, a gate electrode and a gate insulating layer are formed on a substrate, setting the foundation for the transistor. An oxide semiconductor layer is then deposited over this gate insulating layer. The critical innovation begins here: this oxide semiconductor layer is first processed by *wet etching* to form an island-shaped structure. Wet etching is chosen for its gentleness and ability to produce smooth surfaces, which is vital for preserving the delicate oxide material.\n\nNext, a conductive layer is formed to cover this island-shaped oxide semiconductor. This conductive layer is then processed by *dry etching* to define the source and drain electrodes. Dry etching is highly anisotropic, allowing for precise, high-resolution patterning of these metallic contacts. Finally, a unique aspect of this patent is the subsequent removal of a specific part of the island-shaped oxide semiconductor layer, also by *dry etching*, to create a recessed portion. This recessed structure is engineered to optimize the electrical characteristics of the device, enhancing performance and reliability. The combination ensures both material integrity and precise feature definition for advanced semiconductor devices.","question":"How does Method for Manufacturing Semiconductor Device work?"},{"answer":"The Method for Manufacturing Semiconductor Device patent primarily solves the critical problem of reliably and precisely manufacturing semiconductor devices using oxide semiconductors without compromising their performance. Oxide semiconductors are highly promising materials for next-generation electronics due to their superior electron mobility, optical transparency, and low power consumption. However, they are also incredibly delicate and prone to damage during traditional fabrication processes, especially during etching.\n\nPrior art manufacturing methods often struggled with this dilemma: aggressive dry etching techniques could achieve precise patterns but often damaged the oxide material, leading to reduced device performance, instability, and lower manufacturing yields. Conversely, gentler wet etching methods often lacked the precision needed for the intricate geometries of modern devices. This created a significant bottleneck in harnessing the full potential of oxide semiconductors.\n\nThis innovation resolves these issues by introducing a hybrid etching strategy that leverages the benefits of both wet and dry etching while mitigating their drawbacks. It ensures that the sensitive oxide material is handled gently during its initial shaping, while high-precision features are added in a controlled manner, leading to higher-performing, more reliable devices with improved manufacturing yields.","question":"What problem does Method for Manufacturing Semiconductor Device solve?"},{"answer":"The patent data for \"Method for Manufacturing Semiconductor Device\" (US-9853069) does not list specific inventors in the provided abstract. This information is typically detailed within the full patent document, which would attribute the invention to specific individuals or a team of researchers and engineers.\n\nPatent filings often originate from research and development departments within large corporations or academic institutions. While the provided data doesn't name the individuals, the nature of the invention, focusing on advanced semiconductor manufacturing processes, suggests it would be the result of collaborative efforts by experts in materials science, electrical engineering, and process technology.\n\nTo identify the exact inventors and the assignee (the company or organization that owns the patent), one would need to consult the full official patent document on a patent database like the USPTO or Google Patents. This information is crucial for understanding the origin and intellectual property ownership of the Method for Manufacturing Semiconductor Device.","question":"Who invented Method for Manufacturing Semiconductor Device?"},{"answer":"The Method for Manufacturing Semiconductor Device offers several key benefits that significantly advance the state of semiconductor manufacturing, particularly for devices utilizing oxide semiconductors. These benefits translate directly into improved product performance, manufacturing efficiency, and market competitiveness.\n\nFirstly, it leads to **superior device performance**. By minimizing process-induced damage to the delicate oxide semiconductor layer through strategic wet etching and optimizing the channel structure with a recessed portion, the resulting transistors exhibit higher electron mobility, lower leakage currents, enhanced stability, and improved on/off ratios. This means faster, more reliable, and more energy-efficient electronic devices.\n\nSecondly, the patent enables **increased manufacturing yields**. The precise and damage-mitigated fabrication process reduces the number of defective units, leading to higher production efficiency and lower per-unit manufacturing costs. This is a critical advantage in high-volume production environments. Finally, it **unlocks new design possibilities** by providing a reliable method to create complex features like recessed channels, fostering innovation in device architecture and enabling the development of next-generation products such as flexible displays and advanced memory solutions. The Method for Manufacturing Semiconductor Device ensures that the full potential of oxide semiconductors can be realized in commercial applications.","question":"What are the key benefits of Method for Manufacturing Semiconductor Device?"},{"answer":"The Method for Manufacturing Semiconductor Device distinguishes itself from prior art by strategically integrating and sequencing wet and dry etching techniques to overcome the limitations inherent in each method when applied individually to oxide semiconductors. Prior art typically relied heavily on either purely wet or purely dry etching, or less optimized combinations, each presenting significant trade-offs.\n\nTraditional wet etching, while gentle, often lacked the precision for anisotropic (directional) patterning, leading to undercutting and poor critical dimension control. Conversely, conventional dry etching offered precision but caused significant damage to sensitive oxide semiconductors, degrading device performance. Prior attempts at hybrid methods often failed to fully mitigate these issues.\n\nThis patent's key differentiation lies in its specific, intelligent sequence: it uses *wet etching* for the initial, delicate shaping of the oxide semiconductor layer into an island, preserving its integrity. It then employs *dry etching* for the precise patterning of robust conductive layers (source/drain electrodes) and, uniquely, for creating a performance-optimizing *recessed portion* within the oxide semiconductor itself. This sequential, tailored approach ensures minimal damage to the sensitive material while achieving the high-resolution, complex geometries required for high-performance devices, a capability largely absent in prior art. The Method for Manufacturing Semiconductor Device sets a new standard for precision and material preservation.","question":"How is Method for Manufacturing Semiconductor Device different from prior art?"},{"answer":"The Method for Manufacturing Semiconductor Device is poised to significantly impact several high-growth industries that rely on advanced semiconductor components, particularly those leveraging oxide semiconductors.\n\nPrimarily, it will have a profound effect on the **display industry**. This includes manufacturers of high-resolution, energy-efficient panels for smartphones, tablets, laptops, and large-screen televisions (e.g., OLED, Micro-LED). The ability to fabricate superior oxide semiconductor thin-film transistors (TFTs) with this method will lead to brighter, sharper, more stable, and potentially flexible displays.\n\nSecondly, the **memory industry** will benefit immensely. The precise and damage-free processing enabled by this patent is crucial for developing and mass-producing next-generation non-volatile memory devices, such as RRAM (Resistive Random-Access Memory) and FeRAM (Ferroelectric Random-Access Memory), which often utilize oxide-based materials for higher density and faster performance. Furthermore, the **Internet of Things (IoT)** and **wearable electronics** sectors will see advancements. More reliable and efficient semiconductor components will enable smaller, lower-power, and more robust IoT devices and wearables. The Method for Manufacturing Semiconductor Device is thus a foundational technology that will fuel innovation across a broad spectrum of electronic products and applications.","question":"What industries will Method for Manufacturing Semiconductor Device impact?"},{"answer":"The patent for \"Method for Manufacturing Semiconductor Device\" (US-9853069) has a specific timeline regarding its filing and publication dates.\n\nThe **Filing Date** for this patent was **2017-06-22**. This is the date when the complete patent application, including the specification, claims, drawings, and any required declarations, was officially submitted to the patent office. The filing date is crucial as it typically establishes the priority date for the invention, meaning it marks the earliest date on which the invention was documented and legally protected.\n\nThe **Publication Date** for the Method for Manufacturing Semiconductor Device was **2017-12-26**. This is the date when the patent application was made public by the patent office, allowing the details of the invention to be viewed by the public. While the patent may not have been formally granted by this date, its contents become publicly accessible, contributing to the body of technical knowledge. The grant date, if applicable, would be a separate event after the examination process.","question":"When was Method for Manufacturing Semiconductor Device filed/granted?"},{"answer":"The Method for Manufacturing Semiconductor Device has significant commercial applications across various sectors of the electronics industry, primarily driven by its ability to create high-performance, reliable devices using advanced oxide semiconductors.\n\nOne of the most prominent applications is in **advanced display technologies**. This includes the manufacturing of backplanes for high-resolution, energy-efficient OLED (Organic Light-Emitting Diode) displays, LCDs (Liquid Crystal Displays), and emerging technologies like Micro-LEDs. The patent enables the fabrication of superior thin-film transistors (TFTs) that are essential for brighter, sharper, and more stable screens in smartphones, tablets, laptops, and televisions. Furthermore, it is crucial for the development of **flexible and transparent displays**, opening up new product categories like rollable phones and transparent augmented reality devices.\n\nAnother critical area is **non-volatile memory**. The precise processing facilitated by this patent is vital for the mass production of next-generation memory devices that utilize oxide materials, offering higher density, faster access speeds, and lower power consumption for enterprise storage, data centers, and edge computing. Additionally, the Method for Manufacturing Semiconductor Device will find applications in **advanced sensors** and **Internet of Things (IoT) devices**, where high-performance, low-power, and compact components are essential. This technology will enable a new wave of innovative electronic products across consumer, industrial, and automotive markets.","question":"What are the commercial applications of Method for Manufacturing Semiconductor Device?"},{"answer":"Looking ahead, the Method for Manufacturing Semiconductor Device is expected to be a foundational technology that will enable several exciting future developments in semiconductor and electronics industries. Its core innovation—precise, damage-free fabrication of oxide semiconductors—will continue to be refined and expanded upon.\n\nOne major development will be the **further miniaturization and integration** of oxide semiconductor devices. As the process becomes more optimized, it will facilitate the creation of even smaller, denser components, pushing the limits of Moore's Law for specific applications. This will lead to more compact and powerful devices across all electronics categories. We can also expect **enhanced material compatibility and process versatility**. Future developments may involve adapting this method to a wider array of novel oxide semiconductor compositions or integrating it with other advanced materials, such as 2D materials, to create multi-functional devices with unprecedented capabilities.\n\nFurthermore, the Method for Manufacturing Semiconductor Device will likely contribute to the **advancement of flexible and stretchable electronics**. With a robust method for processing delicate materials, the industry can confidently move towards mass-producing truly conformable and wearable devices. Finally, there will be continued efforts to **improve process automation and yield optimization**, leveraging AI and machine learning to fine-tune etching parameters and predict potential defects, making the manufacturing process even more efficient and cost-effective. The Method for Manufacturing Semiconductor Device is a critical stepping stone towards a future of ubiquitous, high-performance, and seamlessly integrated electronics.","question":"What are the future developments expected for Method for Manufacturing Semiconductor Device?"}],"topics":["Method for Manufacturing Semiconductor Device","oxide semiconductor","semiconductor manufacturing","wet etching","dry etching","technical","background","modern"],"tech_cluster":null},"seo":{"title":"Method for Manufacturing Semiconductor Device - Patent US-9853069","description":"Discover Method for Manufacturing Semiconductor Device, a patent revolutionizing oxide semiconductor fabrication with precise wet and dry etching for next-gen electronics.","keywords":["Method for Manufacturing Semiconductor Device","oxide semiconductor","semiconductor manufacturing","wet etching","dry etching","display technology","thin-film transistor","electronic device fabrication","recessed portion","patent US-9853069","semiconductor processing","advanced materials","microelectronics","fabrication technique","patent analysis"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853069","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9853069). https://patentable.app/patents/US-9853069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853069","json":"https://patentable.app/api/llm-context/US-9853069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:43:49.939Z"}