{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853081","patent":{"patent_number":"US-9853081","title":"Semiconductor device, electrical device system, and method of producing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-10-03T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer."},"analysis":{"summary":"The patent, \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device,\" presents a significant advancement in semiconductor device architecture, particularly for multi-layered chip designs. Its core innovation lies in a novel vertical interconnect structure.\n\nThis invention addresses the critical problem of efficiently and reliably establishing electrical connections between a foundational semiconductor layer and external points within a complex, multi-layered chip. Traditional methods often involve intricate routing through multiple intermediate layers, leading to increased parasitic effects, signal degradation, and manufacturing complexity, which ultimately limit performance and increase costs in advanced 3D integrated circuits.\n\nThe key technical approach described is the 'first penetrating electrode.' This electrode is designed to extend through various insulating and layered members, including an insulation member layer, a first interlayer insulation film, and a layered member containing a wiring layer and a second interlayer insulation film. Crucially, this penetrating electrode maintains an electrical connection *only* with the first semiconductor layer. A transistor is also disposed in an upper portion of the insulation member layer, indicating a compact and integrated design where active components coexist with this novel interconnection.\n\nFrom a business perspective, this technology offers substantial value by enabling the creation of more compact, higher-performing, and energy-efficient semiconductor devices. It simplifies manufacturing processes by reducing the complexity of vertical routing, potentially leading to higher yields and lower production costs. Applications span a wide range of electrical device systems, from high-performance computing and AI accelerators to mobile devices and automotive electronics, all of which demand increasingly dense and efficient chip solutions.\n\nThe market opportunity for this innovation is considerable within the rapidly expanding fields of 3D integration, advanced packaging, and heterogeneous integration. Companies adopting this approach can gain a competitive edge by developing next-generation chips that overcome current performance and manufacturing bottlenecks, driving innovation and capturing market share in a fiercely competitive industry.","layman_explanation":"### What Problem Does This Solve?\nImagine building a very tall, multi-story building where each floor has different functions – some are offices, some are data centers, some are power hubs. For the building to work, you need to connect the foundational power grid on the ground floor directly to specific systems on the upper floors. Traditionally, this might involve running long, winding cables through every floor, potentially interfering with other systems, taking up a lot of space, and being a nightmare to install. In the world of microchips, this is precisely the challenge with 3D integrated circuits (3D ICs) or stacked chips. Connecting a crucial base layer to other parts of the chip often requires complex routing through many intermediate layers, leading to slower performance, higher power consumption, and increased manufacturing errors. The existing solutions are often like those tangled, inefficient cables.\n\n### How Does It Work?\nThis patent, \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device,\" offers a remarkably elegant solution. Think of it as creating a dedicated, express elevator shaft that goes straight from the ground floor (our 'first semiconductor layer') directly to the roof, without stopping or connecting to any of the floors in between. This 'elevator shaft' is what the patent calls a 'first penetrating electrode.' It's a special electrical pathway that is engineered to pass cleanly through all the layers above – insulation, other wiring, even a transistor embedded within an upper layer – but only makes an electrical connection with the very first, foundational semiconductor layer. It's like having a private, high-speed data line that avoids all the 'traffic' and 'noise' on the intermediate floors, ensuring a clean, direct, and efficient connection.\n\n### Why Does This Matter?\nThis innovation matters significantly for several business reasons:\n*   **Performance Boost:** By providing a direct and isolated electrical path, signals can travel faster and with less interference. This means chips can process information more quickly, leading to more powerful smartphones, faster AI accelerators, and more responsive computing devices.\n*   **Cost Reduction & Higher Yields:** Simplifying the internal wiring architecture reduces the complexity of manufacturing. Less complexity often translates to fewer errors during production, resulting in higher manufacturing yields (more good chips per batch) and, consequently, lower production costs.\n*   **Miniaturization:** With more efficient use of space for connections, chips can be designed to be smaller and more compact, which is crucial for shrinking device sizes in consumer electronics and wearables.\n*   **Competitive Edge:** Companies that adopt this technology can differentiate their products, offering superior performance and efficiency. This can lead to increased market share and stronger brand loyalty in highly competitive technology sectors.\n*   **Strategic Advantage:** This patent provides a foundational technology for the future of advanced packaging and 3D integration, allowing businesses to stay ahead of the curve in a rapidly evolving industry.\n\n### What's Next?\nThis technology is a building block for the next generation of electronics. We can expect to see it integrated into high-performance processors, advanced memory solutions, and specialized chips for artificial intelligence and autonomous systems. Its adoption will likely accelerate the trend towards more compact and powerful devices across various industries, from consumer tech to industrial automation and aerospace. For investors, this represents an opportunity to back companies that are solving fundamental challenges in semiconductor manufacturing, paving the way for significant long-term growth and innovation in the digital landscape.","technical_analysis":"The patent, \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device,\" details a sophisticated architectural design aimed at enhancing the performance and manufacturability of multi-layered semiconductor devices. The core technical contribution revolves around a highly efficient and isolated vertical electrical interconnection scheme.\n\n**Technical Architecture:**\nThe device architecture begins with a 'first semiconductor layer,' which can be envisioned as the foundational substrate or an active layer requiring dedicated electrical access. Formed directly on this layer is an 'insulation member layer.' Crucially, a 'transistor' is strategically positioned within an upper portion of this insulation member layer, indicating a compact, vertically integrated design where active devices are nestled within the insulating strata. Covering this transistor and the insulation member layer is a 'first interlayer insulation film.' Above this, a 'layered member' is introduced, which itself comprises a 'wiring layer' (for signal or power distribution) and a 'second interlayer insulation film.'\n\nThe most innovative element is the 'first penetrating electrode.' This electrode is designed to physically extend, or 'penetrate,' vertically through the entire stack of overlying materials: the insulation member layer, the first interlayer insulation film, and the layered member. The critical specification is that this penetrating electrode is electrically connected *only* to the first semiconductor layer. This implies a highly controlled fabrication process that ensures electrical isolation from all intermediate layers it traverses.\n\n**Implementation Details and Algorithm Specifics (Conceptual):**\nThe 'method of producing' such a device would involve a sequence of advanced semiconductor manufacturing steps. Conceptually, this would include:\n1.  **First Semiconductor Layer Preparation:** Standard wafer processing for the base layer.\n2.  **Insulation Member Layer Deposition:** Growing or depositing a dielectric layer (e.g., SiO2, SiN) with controlled thickness and properties.\n3.  **Transistor Fabrication:** Standard CMOS or other transistor fabrication techniques within the upper region of the insulation member layer. This might involve etching wells, gate deposition, source/drain doping, and metallization.\n4.  **First Interlayer Insulation Film:** Deposition of another dielectric layer to cover and planarize the transistor and surrounding insulation.\n5.  **Layered Member Formation:** This involves sequential deposition of the second interlayer insulation film and the wiring layer. The wiring layer itself would be patterned using lithography and etching, followed by metallization (e.g., copper, aluminum).\n6.  **Penetrating Electrode Formation:** This is the most critical step. It would likely involve:\n    *   **Deep Etching:** Anisotropic etching (e.g., RIE, DRIE) to create a high-aspect-ratio trench or via that extends from the top surface down to the first semiconductor layer, passing through all intermediate layers.\n    *   **Dielectric Liner Deposition:** Conformal deposition of a high-quality dielectric liner (e.g., ALD-grown SiO2 or HfO2) along the sidewalls of the trench to ensure electrical isolation from the intermediate layers.\n    *   **Electrode Filling:** Filling the insulated trench with a conductive material (e.g., tungsten, copper, doped polysilicon) to form the penetrating electrode.\n    *   **Planarization:** Chemical Mechanical Planarization (CMP) to achieve a smooth surface for subsequent layers.\n\n**Integration Patterns and Performance Characteristics:**\nThis approach enables highly efficient vertical integration patterns. By providing a dedicated, isolated electrical path, the penetrating electrode minimizes parasitic capacitance and inductance that typically plague multi-layer interconnects. This leads to:\n*   **Improved Signal Integrity:** Reduced crosstalk and attenuation for high-frequency signals.\n*   **Lower IR Drop:** More efficient power and ground delivery to the first semiconductor layer, crucial for high-current applications.\n*   **Faster Switching Speeds:** Shorter, cleaner signal paths reduce propagation delays.\n*   **Enhanced Power Efficiency:** Reduced parasitic losses contribute to lower overall power consumption.\n\n**Code-Level Implications (Conceptual):**\nWhile this patent is hardware-centric, its implications for software and system design are significant. For developers working on firmware, operating systems, or application-specific integrated circuits (ASICs) that interact closely with hardware, this innovation means they can rely on more predictable and stable hardware performance. For instance, timing constraints can be tightened, and power management algorithms can be optimized with greater assurance of consistent hardware behavior. The reduced noise and improved signal integrity could also simplify error correction mechanisms and enable higher data rates in communication protocols implemented on the chip.\n\nIn essence, the Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device provides a robust foundation for building more complex, high-performance, and reliable electronic systems, reducing the inherent trade-offs often associated with increasing integration density.","business_analysis":"The patent, \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device,\" introduces a pivotal innovation in semiconductor manufacturing with profound implications for the global electronics market. This technology directly addresses critical bottlenecks in advanced chip packaging and 3D integration, positioning it as a significant enabler for next-generation electronic devices.\n\n**Market Opportunity Size:**\nThe market for advanced packaging, 3D ICs, and heterogeneous integration is rapidly expanding, projected to reach hundreds of billions of dollars in the coming decade. As traditional Moore's Law scaling slows, vertical integration becomes essential for continued performance gains. This patent's solution for efficient vertical interconnects taps directly into this growth, offering a key component for high-performance computing (HPC), artificial intelligence (AI) accelerators, high-bandwidth memory (HBM), advanced mobile processors, and automotive electronics. Each of these segments is experiencing explosive demand, creating a vast addressable market for technologies that can improve chip density, speed, and power efficiency.\n\n**Competitive Advantages:**\nThis innovation provides several distinct competitive advantages:\n1.  **Performance Leadership:** By enabling cleaner, faster, and more reliable electrical paths, the technology allows for chips with superior processing speeds and lower power consumption, giving adopting companies a performance edge.\n2.  **Cost Efficiency:** Simplifying the complex routing inherent in multi-layered chips can lead to higher manufacturing yields and reduced production costs per chip, enhancing profitability.\n3.  **Miniaturization:** The ability to create more compact, densely integrated devices is crucial for consumer electronics (smartphones, wearables) and embedded systems where space is at a premium.\n4.  **Design Flexibility:** Engineers gain greater freedom in designing complex 3D architectures, accelerating R&D cycles and enabling more innovative product designs.\n5.  **IP Protection:** Owning this foundational patent provides a strong intellectual property barrier, potentially leading to licensing opportunities and solidifying market position.\n\n**Revenue Potential and Business Models:**\nCompanies that integrate this technology into their chip designs can realize increased revenue through premium pricing for higher-performance products. Furthermore, the patent itself could be a valuable asset for licensing to other semiconductor manufacturers, foundries, or fabless companies seeking to implement advanced 3D integration. A business model could involve:\n*   **Direct Product Integration:** Incorporating the technology into proprietary chip designs (e.g., CPUs, GPUs, AI accelerators).\n*   **Foundry Services:** Offering manufacturing services to third parties utilizing this patented method.\n*   **IP Licensing:** Licensing the patent to other semiconductor players for a fee or royalty.\n*   **Strategic Partnerships:** Collaborating with key industry players to co-develop and commercialize solutions based on this innovation.\n\n**Strategic Positioning:**\nThis technology strategically positions its adopters at the forefront of 3D IC and advanced packaging. It allows companies to differentiate their products based on superior performance, power efficiency, and form factor. For companies competing in the high-stakes AI and HPC markets, where every nanosecond and watt counts, this patent could be a critical differentiator. It also strengthens a company's position against rivals still reliant on more complex and less efficient vertical interconnect solutions.\n\n**ROI Projections:**\nInvestment in developing and implementing this technology promises a strong return. Reduced manufacturing costs, coupled with the ability to command higher prices for superior products, will drive profitability. The potential for licensing revenue further diversifies the ROI streams. Early adopters can expect to gain market share, attract top engineering talent, and establish themselves as leaders in advanced semiconductor technology, ultimately translating into significant long-term financial gains.","faqs":[{"answer":"The patent, \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device\" (US-9853081), describes a groundbreaking innovation in the design and manufacturing of multi-layered semiconductor devices. At its core, it introduces a novel way to create highly efficient and isolated vertical electrical connections within complex chip architectures.\n\nSpecifically, this invention details a semiconductor device that includes a foundational 'first semiconductor layer,' an 'insulation member layer' built on top of it, and a 'transistor' embedded within the upper part of this insulation layer. Further layers, such as an interlayer insulation film and a wiring layer, are stacked above these components. The key feature is a 'first penetrating electrode' that physically extends through all these overlying insulation and wiring layers.\n\nCrucially, this penetrating electrode is engineered to be electrically connected *only* to the initial first semiconductor layer, ensuring it remains isolated from all intermediate layers it passes through. This direct and dedicated electrical path significantly improves signal integrity and power delivery compared to traditional, more convoluted interconnect methods. This technology is vital for the next generation of compact and high-performance electronic systems. Keywords: semiconductor device, electrical device system, patent US-9853081, vertical interconnects, chip architecture, penetrating electrode.","question":"What is Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device?"},{"answer":"The Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device works by creating a dedicated, insulated, and direct electrical pathway through multiple layers of a semiconductor device. Imagine a multi-story building where a critical power line needs to connect from the ground floor directly to an external grid, without interfering with any of the intermediate floors.\n\nThis patent achieves this by forming a 'first penetrating electrode' that starts from an upper surface of the chip and extends vertically downwards. This electrode passes through various insulating films (like the insulation member layer and interlayer insulation films) and even a 'wiring layer,' but it is meticulously isolated from these intermediate layers. The electrode's only electrical connection is established with the 'first semiconductor layer' at the bottom of the stack.\n\nThis process involves advanced manufacturing techniques such as precision etching to create a deep, narrow trench, followed by the deposition of a highly conformal dielectric (insulating) liner along the trench walls. Finally, this insulated trench is filled with a conductive material to form the electrode. This design ensures minimal parasitic capacitance, reduced signal delay, and superior electrical isolation, allowing for cleaner and faster signal transmission. Keywords: how it works, penetrating electrode, semiconductor manufacturing, 3D integration, electrical isolation, signal integrity.","question":"How does Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device work?"},{"answer":"The Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device patent primarily solves the critical problem of inefficient and complex vertical electrical interconnections in multi-layered semiconductor devices. As chips become more compact and integrate more functions in 3D stacks, connecting different layers, especially to a foundational base layer, becomes increasingly challenging.\n\nTraditional methods often involve intricate routing of electrical signals through multiple intermediate layers. This 'winding path' can lead to several issues: increased parasitic capacitance and inductance (which slow down signals and waste power), degraded signal integrity (leading to errors), higher manufacturing complexity, and consumption of valuable silicon area. These problems ultimately limit the performance, power efficiency, and cost-effectiveness of advanced 3D integrated circuits.\n\nThis innovation provides a direct, isolated, and low-impedance path, effectively bypassing the complexities and performance bottlenecks associated with prior art. It allows for a clean electrical connection to a foundational layer without interfering with the functionality of overlying components, thereby enabling higher performance, greater integration density, and simplified manufacturing. Keywords: problem solved, vertical interconnects, 3D ICs, signal degradation, manufacturing complexity, power efficiency, chip design challenges.","question":"What problem does Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device solve?"},{"answer":"The patent document for \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device\" (US-9853081) lists a team of inventors and an assignee. While the specific names of the inventors and the assignee are not provided in the prompt's data, patent filings typically credit the individuals who conceived the inventive ideas and the company or organization to which the patent rights are assigned.\n\nThese inventors are usually engineers, scientists, or researchers working within the semiconductor industry, often affiliated with major technology companies, universities, or research institutions. Their expertise would span fields such as materials science, electrical engineering, microfabrication, and solid-state physics, essential for developing such intricate device architectures and manufacturing methods. The assignee is the entity that owns the patent and holds the exclusive rights to commercialize the invention. Keywords: inventors, assignee, patent ownership, semiconductor industry, patent US-9853081, research and development.","question":"Who invented Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device?"},{"answer":"The Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device offers several transformative benefits for the electronics industry:\n\n1.  **Enhanced Performance:** By providing a direct and isolated electrical path, the penetrating electrode minimizes signal delays and parasitic effects. This results in faster signal propagation, enabling higher operating frequencies and overall improved chip performance for applications like AI accelerators and high-performance computing.\n2.  **Increased Power Efficiency:** Reduced parasitic capacitance and resistance lead to less energy loss during signal transmission and power delivery. This translates directly into lower power consumption for the chip, extending battery life in mobile devices and reducing energy costs in data centers.\n3.  **Simplified Manufacturing and Higher Yields:** The streamlined interconnect architecture simplifies the complex routing challenges inherent in multi-layered chip designs. This can lead to fewer manufacturing defects, higher production yields (more functional chips per wafer), and ultimately, lower manufacturing costs.\n4.  **Greater Integration Density:** By optimizing vertical space utilization and reducing the need for complex horizontal routing, the technology allows for more components to be packed into a smaller footprint, enabling more compact and powerful devices.\n5.  **Improved Signal Integrity:** The electrical isolation ensures cleaner signals with less crosstalk and noise, crucial for sensitive analog circuits and high-speed digital communications within the chip. Keywords: key benefits, chip performance, power efficiency, manufacturing costs, integration density, signal integrity, advanced packaging.","question":"What are the key benefits of Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device?"},{"answer":"The Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device distinguishes itself from prior art by offering a unique and highly optimized approach to vertical electrical interconnections in multi-layered semiconductor devices. While existing technologies like Through-Silicon Vias (TSVs) provide vertical paths, they often come with limitations that this patent specifically addresses.\n\nPrior art TSVs typically involve creating a via through the entire silicon wafer, which can be complex and expensive to manufacture, and may still require careful routing to avoid electrical interaction with intermediate layers. Traditional multi-level interconnects, on the other hand, often involve long, winding paths through multiple metal and dielectric layers, leading to significant parasitic effects and signal degradation.\n\nThis invention's key differentiator is its 'first penetrating electrode,' which is explicitly designed to be electrically connected *only* to the 'first semiconductor layer' while passing through all intermediate layers in complete isolation. This dedicated, insulated, and direct path fundamentally reduces parasitic capacitance and inductance, enhances signal integrity, and simplifies routing complexity in a way that is not inherently achieved by general TSVs or conventional multi-level wiring. It offers a more elegant, efficient, and direct solution for critical base layer connections. Keywords: prior art, TSV, vertical interconnects, penetrating electrode, differentiation, signal integrity, manufacturing comparison, chip design.","question":"How is Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device different from prior art?"},{"answer":"The Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device is poised to have a significant impact across a wide array of industries that rely on advanced semiconductor technology. Its ability to enable higher performance, greater power efficiency, and more compact chip designs makes it a foundational technology for numerous sectors.\n\n**High-Performance Computing (HPC) and Artificial Intelligence (AI):** These fields demand ever-increasing processing power and memory bandwidth. The patent's efficient interconnects will enable faster AI accelerators and more powerful CPUs/GPUs, crucial for data centers, machine learning, and scientific simulations.\n\n**Consumer Electronics:** Smartphones, tablets, wearables, and smart home devices will benefit from smaller, thinner form factors, extended battery life, and enhanced processing capabilities. This innovation helps meet consumer demand for more advanced features in compact packages.\n\n**Automotive Electronics:** Modern vehicles are becoming sophisticated computers on wheels. This technology can lead to more reliable, faster, and power-efficient chips for advanced driver-assistance systems (ADAS), infotainment, and autonomous driving platforms, where safety and real-time processing are paramount.\n\n**Internet of Things (IoT):** Edge computing devices, sensors, and embedded systems require powerful yet tiny and energy-efficient chips. This patent facilitates the integration of complex functions into small IoT nodes.\n\n**Telecommunications (5G/6G):** Advanced base stations and network equipment will leverage these chips for faster data processing and lower power consumption, supporting the next generation of wireless communication. Keywords: industry impact, AI, HPC, consumer electronics, automotive, IoT, 5G, semiconductor applications, electronic device systems.","question":"What industries will Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device impact?"},{"answer":"The patent \"Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device\" (US-9853081) was filed on **October 3, 2016**. The filing date marks the official submission of the patent application to the patent office, initiating the examination process.\n\nThe patent was subsequently published, and granted on **December 26, 2017**. The publication date is when the patent application becomes publicly accessible, regardless of whether it has been granted yet. The grant date signifies the successful completion of the examination process and the issuance of the patent, conferring exclusive rights to the patent owner for a specified period, typically 20 years from the earliest filing date. These dates are crucial for understanding the patent's lifecycle, its relevance in the prior art landscape, and the duration of its protection. Keywords: filing date, publication date, granted patent, patent lifecycle, US-9853081, patent history, intellectual property.","question":"When was Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device are extensive, spanning any sector requiring high-performance, compact, and energy-efficient semiconductor components. This patent's innovation in vertical interconnects makes it a critical enabler for next-generation electronic products.\n\n**High-Performance Processors:** This technology can be integrated into CPUs, GPUs, and specialized AI accelerators to create faster, more efficient processing units for data centers, cloud computing, and advanced workstations. Improved signal integrity and power delivery are crucial for these demanding applications.\n\n**High-Bandwidth Memory (HBM):** By facilitating more direct and efficient connections within stacked memory modules, this invention can enhance the performance and capacity of HBM, which is vital for graphics cards, AI training systems, and HPC platforms.\n\n**Mobile Devices and Wearables:** The ability to create more compact and power-efficient chips directly supports the development of thinner smartphones, longer-lasting smartwatches, and more powerful embedded systems for augmented reality (AR) and virtual reality (VR) devices.\n\n**Automotive and IoT:** For autonomous driving systems, advanced sensors, and industrial IoT devices, the reliability and performance benefits of this patent are key. It enables more robust control units, faster data processing at the edge, and more efficient power management in constrained environments. Commercialization can occur through direct product integration by chip manufacturers, licensing to foundries, or strategic partnerships across the electronics supply chain. Keywords: commercial applications, HBM, AI accelerators, mobile devices, automotive electronics, IoT, semiconductor market, product integration, licensing.","question":"What are the commercial applications of Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device?"},{"answer":"The future developments for the Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device are expected to build upon its foundational innovation in vertical interconnects, pushing the boundaries of chip integration and performance. We can anticipate several key areas of evolution:\n\n**Enhanced Manufacturing Processes:** Further refinement of the fabrication methods will likely focus on improving yield, reducing cost, and scaling the technology to even smaller dimensions. This could involve new etching techniques, more advanced dielectric materials for isolation, and novel conductive materials for the electrodes.\n\n**Integration with Advanced Packaging:** The technology is expected to become a core component of future advanced packaging solutions, including chiplet architectures and heterogeneous integration. This means combining diverse types of chips (e.g., logic, memory, analog) into a single package, where the penetrating electrode provides critical inter-chip connectivity.\n\n**Monolithic 3D Integration:** Longer-term developments might see this concept evolve towards true monolithic 3D integration, where active devices are fabricated in multiple layers directly on a single substrate, rather than stacking separate dies. The isolated vertical connections will be essential for such ultra-dense architectures.\n\n**New Applications:** As the technology matures, it will enable new classes of devices and applications that are currently limited by interconnect performance. This could include ultra-low-power edge AI processors, next-generation quantum computing architectures, or highly integrated sensor fusion platforms. Continuous research and development will aim to optimize its electrical, thermal, and mechanical properties for diverse and demanding future requirements. Keywords: future developments, monolithic 3D, chiplet, advanced packaging, manufacturing advancements, quantum computing, AI hardware, semiconductor roadmap, US-9853081.","question":"What are the future developments expected for Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device?"}],"topics":["semiconductor device","electrical device system","method of producing semiconductor device","patent US-9853081","3D integration","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Semiconductor Device, Electrical Device System - Patent US-9853081","description":"Discover the groundbreaking Semiconductor Device, Electrical Device System, and Method of Producing Semiconductor Device patent. Features a unique penetrating electrode for enhanced chip performance and 3D integration.","keywords":["semiconductor device","electrical device system","method of producing semiconductor device","patent US-9853081","3D integration","chip design","advanced packaging","penetrating electrode","semiconductor manufacturing","vertical interconnects","high-performance computing","power efficiency"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853081","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853081","citation_suggestion":"Patentable. \"Semiconductor device, electrical device system, and method of producing semiconductor device\" (US-9853081). https://patentable.app/patents/US-9853081","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853081","json":"https://patentable.app/api/llm-context/US-9853081","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:39:37.169Z"}