{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853089","patent":{"patent_number":"US-9853089","title":"Semiconductor device and structure","assignee":null,"inventors":[],"filing_date":"2016-08-01T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device, including: a first memory cell including a first transistor; a second memory cell including a second transistor, where the second transistor overlays the first transistor and the second transistor self-aligned to the first transistor; and a plurality of junctionless transistors, where at least one of the junctionless transistors controls access to at least one of the memory cells."},"analysis":{"summary":"The patent titled \"Semiconductor Device and Structure\" (US-9853089) presents a significant advancement in semiconductor memory technology, addressing critical challenges in density, power consumption, and manufacturing complexity. The core innovation lies in its unique three-dimensional architectural design for memory cells.\n\nThe primary problem this invention solves is the limitation of traditional planar memory scaling. As electronic devices demand more processing power and data storage in increasingly smaller form factors, conventional memory designs struggle to provide both high density and energy efficiency without incurring prohibitive manufacturing costs or performance compromises. This patent offers a novel way to overcome these physical constraints.\n\nTechnically, the patent describes a semiconductor device comprising two memory cells. The first memory cell includes a first transistor, and a second memory cell includes a second transistor. The ingenuity here is that the second transistor is designed to overlay the first transistor, and crucially, it is engineered to be self-aligned to the first. This self-alignment feature simplifies the intricate fabrication processes typically associated with multi-layered semiconductor structures, reducing potential manufacturing defects and improving yield. Furthermore, the system integrates a plurality of junctionless transistors, with at least one specifically controlling access to the memory cells. Junctionless transistors are notable for their simpler structure, lower leakage currents, and better scalability, contributing significantly to the overall power efficiency of the device.\n\nFrom a business perspective, this technology offers substantial value. It enables the creation of memory chips with significantly higher density, which is critical for emerging applications like artificial intelligence (AI), machine learning (ML) at the edge, high-performance computing (HPC), and advanced mobile devices. The reduced power consumption, facilitated by the junctionless transistors, translates into longer battery life for portable electronics and lower operational costs for data centers. The simplified manufacturing process, due to self-alignment, can lead to more cost-effective production and faster time-to-market for innovative memory solutions.\n\nThe market opportunity for this invention is vast, given the continuous demand for advanced memory solutions that can keep pace with data growth and computational complexity. This patent positions its adopters to lead in the development of next-generation 3D integrated circuits, offering a competitive edge in sectors reliant on high-performance, energy-efficient memory. This innovation is poised to unlock new possibilities for compact, powerful, and sustainable electronic systems.","layman_explanation":"### What Problem Does This Solve?\nImagine your company's data center or your flagship product, a cutting-edge mobile device. Both are constantly demanding more memory – to run complex AI algorithms, process vast amounts of real-time data, or simply offer a smoother user experience. However, the traditional way of making memory chips, by spreading everything out on a flat surface, is like trying to build an ever-expanding single-story office building. You quickly run out of land, and the distances between offices become too great, slowing things down. Existing solutions are reaching their physical limits; they either can't pack enough memory in a small space, consume too much power, or become incredibly expensive and complex to manufacture. This creates a bottleneck, hindering innovation and driving up operational costs.\n\n### How Does It Work?\nThe patent, titled \"Semiconductor Device and Structure,\" offers an elegant solution by thinking vertically. Instead of just building out, this innovation proposes building up. Think of it like a multi-story building for your data. The core idea is to stack memory cells one on top of the other. What's truly clever is that the 'doors' (transistors) to these memory 'rooms' (cells) are designed to automatically line up perfectly when stacked. This 'self-alignment' is a manufacturing marvel, as it significantly reduces the complexity and errors that typically plague the production of multi-layered components. It’s like having a construction crew that can build floors perfectly aligned without needing constant supervision, making the process faster and more reliable.\n\nFurthermore, this system uses a special type of 'gatekeeper' for these memory rooms called 'junctionless transistors.' Unlike conventional gatekeepers that use a lot of energy even when just standing guard, these junctionless transistors are incredibly energy-efficient. They consume very little power, especially when the memory is not actively being used, which is critical for extending battery life in devices and reducing the immense electricity bills of data centers. So, this invention creates a compact, high-capacity memory structure that is also remarkably power-efficient and easier to build.\n\n### Why Does This Matter?\nThis innovation has profound implications across the technology landscape. For your business, it means the potential for products with significantly improved performance and extended battery life, offering a distinct competitive edge in markets saturated with similar offerings. Imagine AI-powered devices that can perform more complex tasks on the edge without needing constant cloud connectivity, or data centers that can handle more data with a smaller physical footprint and lower energy costs. This technology enables higher memory density, which is crucial for advancing AI, IoT, and high-performance computing. The reduced power consumption translates directly into operational savings and improved sustainability metrics. Moreover, the simplified manufacturing process can lead to faster product development cycles and lower per-unit costs, enhancing profitability and market responsiveness. This isn't just a technical tweak; it's a strategic enabler for the next generation of electronic devices and services.\n\n### What's Next?\nThis patent lays a foundational brick for the future of 3D integrated circuits. We can expect to see this approach adopted in advanced memory modules for everything from specialized processors to general-purpose computing. The market adoption timeline will depend on further refinement and industrial scaling, but the underlying principles are robust. For investors, this represents a significant opportunity in the semiconductor intellectual property space, as companies will seek to license or integrate this technology to maintain their competitive edge. Future applications could include ultra-compact memory for implantable medical devices, advanced augmented reality systems, and even novel computing architectures that blur the lines between memory and processing units. This innovation positions itself as a critical component in the evolution of smarter, more efficient electronics.","technical_analysis":"The patent \"Semiconductor Device and Structure\" (US-9853089) describes a novel architecture for semiconductor memory, engineered to overcome the inherent limitations of planar scaling by introducing a sophisticated 3D integration scheme. This technical deep dive will explore the architectural components, implementation details, and performance characteristics that define this innovation.\n\n**Technical Architecture and Core Innovation:**\nThe fundamental architecture comprises a stack of memory cells. Specifically, the patent details a first memory cell incorporating a first transistor, and a second memory cell including a second transistor. The primary technical breakthrough resides in two key aspects: (1) the physical overlay of the second transistor directly above the first transistor, and (2) the critical feature of the second transistor being *self-aligned* to the first transistor. This self-alignment is a cornerstone innovation, addressing one of the most significant challenges in multi-layer semiconductor fabrication: precise registration between successive patterned layers. In conventional 3D integration, misalignment can lead to yield loss and increased manufacturing complexity. The self-alignment mechanism inherently mitigates these issues, simplifying lithographic steps and improving overall manufacturing robustness.\n\n**Implementation Details and Transistor Technology:**\nThe patent further specifies the integration of a plurality of junctionless transistors, with at least one configured to control access to at least one of the memory cells. Junctionless transistors differ fundamentally from traditional inversion-mode MOSFETs. Instead of forming p-n junctions for source and drain regions, a junctionless transistor uses a uniformly doped semiconductor channel. The gate electrode controls the current by depleting or accumulating carriers in this channel. This design offers several advantages relevant to high-density memory: \n*   **Simpler Fabrication:** Eliminates the need for complex doping profiles and thermal budget management associated with junction formation, potentially reducing manufacturing steps and costs.\n*   **Improved Scalability:** Less susceptible to short-channel effects (e.g., drain-induced barrier lowering, velocity saturation) at aggressively scaled dimensions, which is crucial for high-density integration.\n*   **Lower Leakage Current:** Inherently lower off-state leakage currents due to the absence of steep junctions, leading to significantly reduced static power consumption, a critical factor for memory devices.\n\nThe memory cells themselves, while not explicitly detailed in their specific type (e.g., SRAM, DRAM cell), are designed to leverage this stacked and self-aligned transistor pair. The junctionless transistors act as efficient access gates, enabling low-power switching and robust control over data flow to and from the stacked memory elements.\n\n**Performance Characteristics and Advantages:**\n*   **Enhanced Density:** The vertical stacking of memory cells, coupled with self-alignment, dramatically increases the number of memory bits per unit area, pushing beyond the limits of 2D scaling.\n*   **Reduced Power Consumption:** The incorporation of junctionless transistors for access control directly contributes to lower standby power and improved energy efficiency during operation due to their intrinsically low leakage currents.\n*   **Improved Manufacturing Yield:** Self-alignment minimizes critical alignment errors during fabrication, leading to higher yields and potentially lower production costs for complex 3D structures.\n*   **Faster Access Speeds (Potential):** By integrating memory cells vertically and providing efficient access, the overall latency for data retrieval could be reduced, especially when memory is integrated closer to processing units.\n\n**Integration Patterns and Code-Level Implications:**\nFrom an integration standpoint, this technology facilitates a 'monolithic 3D IC' approach, where active device layers are fabricated sequentially and interconnected with high density. This contrasts with '2.5D' or '3D-stacked ICs' that rely on through-silicon vias (TSVs) for inter-die communication. Monolithic 3D offers much finer-grained, shorter inter-layer connections, potentially leading to significant performance gains. For software developers and system architects, this could translate into opportunities for more tightly coupled memory-processor architectures, enabling new classes of in-memory computing or specialized accelerators that rely on ultra-low latency memory access. While not directly impacting code-level implications in terms of programming languages, the underlying hardware efficiency improvements would allow for more complex algorithms and larger datasets to be processed faster and with less energy, influencing software design choices for performance-critical applications.\n\nIn conclusion, the Semiconductor Device and Structure patent represents a sophisticated blend of advanced device physics and innovative architectural design. By combining overlaid, self-aligned transistors with the benefits of junctionless technology, this invention provides a robust framework for developing next-generation, high-density, and energy-efficient 3D integrated memory solutions. This approach is poised to be a cornerstone for future advancements in semiconductor technology, enabling more powerful and compact electronic systems across various applications.","business_analysis":"The patent titled \"Semiconductor Device and Structure\" (US-9853089) introduces a compelling innovation in memory architecture that holds significant business implications for the semiconductor industry and beyond. This analysis explores the market opportunity, competitive advantages, revenue potential, and strategic positioning offered by this groundbreaking technology.\n\n**Market Opportunity Size:**\nThe global memory market is a colossal and rapidly expanding sector, projected to reach hundreds of billions of dollars in the coming years. Driven by the proliferation of AI, IoT, 5G, and high-performance computing (HPC), the demand for high-density, low-power, and high-bandwidth memory solutions is insatiable. Traditional planar memory scaling is becoming increasingly difficult and expensive, creating a critical need for new architectural paradigms. This patent directly addresses these market needs by offering a viable path to significantly increased memory density and efficiency within constrained footprints. The opportunity extends across mobile devices, edge computing, data centers, automotive electronics, and specialized AI accelerators, each representing multi-billion dollar segments.\n\n**Competitive Advantages:**\nThis innovation provides several distinct competitive advantages:\n1.  **Superior Density:** By enabling the vertical stacking of memory cells with self-aligned transistors, the technology can achieve significantly higher bit density per unit area compared to conventional designs. This is a critical differentiator in a market where physical space on a chip is at a premium.\n2.  **Enhanced Power Efficiency:** The integration of junctionless transistors for memory access control is a key factor in reducing leakage currents and overall power consumption. This directly translates to longer battery life for portable devices and substantial energy savings for large-scale data centers, offering a powerful value proposition in an energy-conscious world.\n3.  **Streamlined Manufacturing:** The self-alignment feature is a significant advantage, as it simplifies complex lithography and etching processes typically associated with multi-layer fabrication. This can lead to higher manufacturing yields, reduced production costs, and faster time-to-market for new memory products, giving adopters a cost-efficiency edge.\n4.  **Future-Proofing:** The design principles of this patent are well-suited for future monolithic 3D IC integration, positioning adopters at the forefront of advanced semiconductor manufacturing capabilities.\n\n**Revenue Potential and Business Models:**\nCompanies that successfully implement or license the Semiconductor Device and Structure patent stand to unlock substantial revenue streams. Potential business models include:\n*   **Direct Manufacturing:** Semiconductor foundries could offer this advanced memory technology as a proprietary process, commanding premium pricing for high-density, low-power memory IP blocks or complete memory products.\n*   **IP Licensing:** The patent could be licensed to major semiconductor companies, memory manufacturers, and fabless design houses, generating recurring royalty revenue.\n*   **Product Differentiation:** Device manufacturers (e.g., smartphone, server, AI accelerator companies) could integrate this memory to create highly differentiated products with superior performance, battery life, and compact form factors, leading to increased sales and market share.\n*   **Strategic Partnerships:** Collaborations with leading chip designers and system integrators to co-develop products leveraging this technology.\n\n**Strategic Positioning:**\nThe Semiconductor Device and Structure patent strategically positions its adopters to address the most critical bottlenecks in modern computing. It enables a shift from simply scaling existing architectures to fundamentally rethinking memory design for 3D integration. This allows companies to move up the value chain by offering solutions that are not just incrementally better but architecturally superior. It provides a strategic hedge against the increasing costs and diminishing returns of traditional scaling, offering a path to continued innovation and market leadership.\n\n**ROI Projections:**\nInvestment in this technology, either through R&D or licensing, is likely to yield strong returns due to the high market demand and the significant competitive advantages. Higher yields and lower manufacturing costs per bit, combined with premium pricing for advanced performance and efficiency, could lead to substantial profit margins. Furthermore, the ability to enable new product categories or significantly enhance existing ones implies a strong return on innovation, opening up new revenue streams and strengthening market presence. Early movers in adopting this 3D memory architecture will be well-placed to capitalize on the accelerating demand for advanced semiconductor solutions, ensuring robust ROI for stakeholders.","faqs":[{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) describes an advanced semiconductor device, primarily focused on memory cell architecture. It introduces an innovative method for creating high-density, low-power memory by stacking components in three dimensions.\n\nSpecifically, this invention features a first memory cell with a first transistor, and a second memory cell with a second transistor. The key innovation is that this second transistor is designed to overlay the first transistor and is also crucially self-aligned to it. This self-alignment simplifies the manufacturing process and improves precision.\n\nFurthermore, the patent incorporates a plurality of junctionless transistors. These special transistors are used to control access to the memory cells, contributing significantly to the device's overall power efficiency and scalability. This approach aims to overcome the limitations of traditional two-dimensional memory designs, which struggle to meet the growing demands for compact, powerful, and energy-efficient electronics.\n\nIn essence, Semiconductor Device and Structure provides a blueprint for building memory upwards rather than outwards, making chips smarter and greener. This technology is foundational for next-generation computing, including AI, IoT, and high-performance applications.","question":"What is Semiconductor Device and Structure?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) works by employing a sophisticated multi-layered architecture for memory cells. Instead of arranging all memory components on a single flat plane, this invention stacks them vertically, similar to building a multi-story structure.\n\nThe core mechanism involves two main components: a first memory cell with its transistor and a second memory cell with its transistor. The second transistor is placed directly above the first. The ingenuity lies in its 'self-alignment' feature; this means the upper transistor automatically positions itself perfectly relative to the lower one during fabrication. This crucial step simplifies the complex manufacturing process, reducing errors and improving overall yield for such intricate 3D structures.\n\nAdditionally, the system integrates several 'junctionless transistors.' These are a type of field-effect transistor that operates without the traditional p-n junctions, making them simpler to fabricate and inherently more power-efficient. They are specifically used to control access (reading from or writing to) the stacked memory cells. Their low leakage current significantly reduces the standby power consumption of the memory device.\n\nTogether, the vertical stacking, self-alignment, and the use of junctionless transistors enable Semiconductor Device and Structure to achieve higher memory density, lower power consumption, and more reliable manufacturing compared to conventional memory technologies.","question":"How does Semiconductor Device and Structure work?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) addresses several critical problems facing the semiconductor industry, particularly in memory technology. Primarily, it tackles the limitations of traditional planar (2D) memory scaling.\n\nAs electronic devices become more sophisticated, they require ever-increasing amounts of memory to handle complex tasks like AI processing, real-time data analytics, and high-resolution media. However, simply shrinking 2D memory cells leads to issues such as increased power leakage, higher manufacturing costs due to advanced lithography, and diminishing returns in performance. Physical space on a chip is finite, creating a 'memory wall' that bottlenecks overall system performance.\n\nThis invention solves these issues by enabling true 3D integration of memory cells, dramatically increasing density without expanding the chip's footprint. The self-alignment feature overcomes significant manufacturing challenges associated with multi-layer fabrication, making complex 3D structures more feasible and cost-effective to produce. Furthermore, the incorporation of junctionless transistors directly combats the problem of high power consumption, especially static leakage power, which is a major concern for battery-powered devices and large-scale data centers. Semiconductor Device and Structure therefore provides a scalable, power-efficient, and manufacturable solution to the growing demand for advanced memory.","question":"What problem does Semiconductor Device and Structure solve?"},{"answer":"The patent document for 'Semiconductor Device and Structure' (US-9853089) does not list specific inventors in the provided data. Patent filings typically include the names of the individuals who conceived the invention, but this information was not furnished in the request.\n\nGenerally, patents for complex semiconductor technologies like Semiconductor Device and Structure are the result of collaborative efforts by teams of highly skilled engineers and researchers within major technology companies or research institutions. These teams often specialize in areas such as device physics, materials science, process engineering, and circuit design.\n\nWhile the specific inventors are not detailed here, the innovation described in Semiconductor Device and Structure showcases significant expertise in advanced semiconductor manufacturing and device architecture. The patent was filed on August 1, 2016, and published on December 26, 2017, marking its official entry into the public domain of intellectual property.","question":"Who invented Semiconductor Device and Structure?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) offers several key benefits that are crucial for advancing modern electronics.\n\nFirstly, it delivers significantly **higher memory density**. By stacking memory cells vertically and utilizing self-aligned transistors, the invention can pack more data storage into a smaller physical area. This is vital for creating more powerful yet compact devices, from smartphones to AI accelerators, where chip real estate is at a premium. Higher density directly translates to more computational capability within limited space.\n\nSecondly, the technology provides **superior power efficiency**. The integration of junctionless transistors for memory access control drastically reduces leakage currents, particularly in standby mode. This means longer battery life for portable devices and substantial energy savings for data centers, lowering operational costs and contributing to greener technology. Reduced power consumption is a critical factor in today's energy-conscious world.\n\nThirdly, it offers **simplified and more robust manufacturing**. The self-alignment feature of the stacked transistors reduces the complexity and potential for errors during fabrication. This can lead to higher manufacturing yields, lower production costs, and a faster time-to-market for innovative memory products. This efficiency in manufacturing makes advanced 3D memory more economically viable for mass production. These benefits position Semiconductor Device and Structure as a foundational technology for next-generation computing.","question":"What are the key benefits of Semiconductor Device and Structure?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) differentiates itself from prior art in several fundamental ways, primarily through its unique approach to 3D memory integration and transistor technology.\n\nMost prior art in memory has focused on planar (2D) designs, which are limited by physical space. While some 3D stacking exists (like 2.5D with TSVs or 3D NAND), Semiconductor Device and Structure introduces a novel combination: **self-aligned vertical transistor stacking**. Unlike conventional 3D methods that require complex, error-prone external alignment steps between layers, this invention designs the second transistor to automatically align to the first as it's stacked. This inherent self-alignment drastically simplifies fabrication, reduces overlay errors, and improves manufacturing yield, setting it apart from less integrated 3D approaches.\n\nAnother key differentiator is the **integration of junctionless transistors** for memory access control. Most prior art utilizes conventional MOSFETs. Junctionless transistors, however, offer simpler fabrication (no complex source/drain junctions), better scalability at aggressive dimensions, and significantly lower off-state leakage currents. This makes Semiconductor Device and Structure inherently more power-efficient and suitable for advanced scaling than memory designs relying on traditional transistor types. This combination of intelligent 3D architecture with advanced transistor technology positions Semiconductor Device and Structure as a significant leap beyond existing memory solutions.","question":"How is Semiconductor Device and Structure different from prior art?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) is poised to impact a wide array of industries, acting as a foundational technology for next-generation electronics.\n\n**Consumer Electronics** will see significant advancements. Smartphones, tablets, wearables, and other portable devices can become thinner, lighter, more powerful, and offer substantially longer battery life due to the increased memory density and power efficiency this invention provides. This will drive innovation in product design and user experience.\n\n**Artificial Intelligence (AI) and Machine Learning (ML)** will be profoundly affected. The ability to integrate high-density, low-power memory directly onto AI accelerators and edge computing devices is critical. This will enable more complex AI models to run efficiently on-device, improving responsiveness, privacy, and reducing reliance on cloud infrastructure. This is crucial for applications like autonomous vehicles, smart robotics, and advanced voice assistants.\n\n**Cloud Computing and Data Centers** will benefit from reduced operational costs. Higher memory density means more computational power per server rack, while the lower power consumption translates to significant savings in electricity and cooling, improving the overall total cost of ownership. The Semiconductor Device and Structure can help data centers become more efficient and sustainable. Furthermore, the **Internet of Things (IoT)**, **High-Performance Computing (HPC)**, and **Automotive Electronics** sectors will also leverage this innovation for more capable, efficient, and robust systems.","question":"What industries will Semiconductor Device and Structure impact?"},{"answer":"The 'Semiconductor Device and Structure' patent, identified by the number US-9853089, was officially filed on **August 1, 2016**. This marks the date when the patent application was submitted to the patent office, initiating the examination process.\n\nFollowing the examination, the patent was subsequently published and granted on **December 26, 2017**. The publication date signifies when the patent document became publicly available, detailing the invention's specifications, claims, and drawings. The grant date indicates that the patent office recognized the novelty, non-obviousness, and utility of the invention, officially conferring exclusive rights to the patent holder.\n\nTherefore, the Semiconductor Device and Structure patent moved from application to granted status in a relatively short period, highlighting the innovative nature and potential significance of the technology. These dates are crucial for understanding the patent's lifecycle and its position within the broader intellectual property landscape.","question":"When was Semiconductor Device and Structure filed/granted?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) opens up a vast array of commercial applications across various high-growth technology sectors, primarily driven by its ability to deliver high-density, low-power, and efficiently manufactured memory.\n\nIn **Consumer Electronics**, this innovation will enable the next generation of portable devices. Expect thinner, lighter smartphones, smartwatches, and laptops with significantly extended battery life and enhanced on-device processing capabilities, driving new product cycles and consumer demand. This is crucial for maintaining competitive advantage in a saturated market.\n\nFor **Artificial Intelligence and Machine Learning**, Semiconductor Device and Structure is a game-changer. It facilitates the integration of more memory directly onto AI accelerators and edge devices, enabling faster, more efficient AI inference and training without heavy reliance on cloud connectivity. This is vital for autonomous systems, robotics, and advanced analytics in real-time environments.\n\n**Cloud Computing and Data Centers** stand to benefit from massive operational efficiencies. The increased memory density allows for more powerful servers in the same footprint, while the reduced power consumption translates directly into lower energy bills and cooling costs, improving profitability and sustainability. In the **Internet of Things (IoT)**, this technology can power more intelligent and autonomous sensors and devices with longer operational lives, expanding the scope of connected ecosystems. The Semiconductor Device and Structure is set to be a foundational component in the ongoing digital transformation across industries.","question":"What are the commercial applications of Semiconductor Device and Structure?"},{"answer":"The 'Semiconductor Device and Structure' patent (US-9853089) lays a robust foundation for numerous future developments in semiconductor technology, particularly in 3D integrated circuits and advanced memory solutions.\n\nOne key area of development is the **refinement and scaling of monolithic 3D integration**. As the patent emphasizes self-aligned stacking, future efforts will likely focus on optimizing the fabrication processes to integrate even more layers of memory cells and potentially logic, pushing density limits further while maintaining high yields. This could lead to true 'chiplets' that are seamlessly integrated vertically, offering unprecedented performance.\n\nAnother significant development will involve **integrating different memory types**. While the patent describes general memory cells, future iterations could apply its principles to specific memory technologies like DRAM, SRAM, or even emerging non-volatile memories (e.g., ReRAM, MRAM). This would create highly versatile and powerful hybrid memory architectures. The **optimization of junctionless transistors** for even lower power consumption and higher speed will also be a continuous focus, exploring new materials and device geometries.\n\nUltimately, the Semiconductor Device and Structure will contribute to the realization of **in-memory computing** and **neuromorphic computing**. By enabling memory and processing logic to be tightly integrated in 3D, new computing paradigms that mimic the human brain or perform computation directly within memory arrays will become more feasible. This will unlock new levels of processing efficiency and capability, shaping the future of AI and high-performance computing. Expect ongoing research into thermal management and inter-layer communication to support these ultra-dense, high-performance 3D structures.","question":"What are the future developments expected for Semiconductor Device and Structure?"}],"topics":["semiconductor device and structure","US-9853089","semiconductor memory","3D integration","junctionless transistor","relentless","demand","higher"],"tech_cluster":null},"seo":{"title":"Semiconductor Device and Structure - Patent US-9853089","description":"Discover the groundbreaking Semiconductor Device and Structure patent. Featuring stacked, self-aligned transistors and junctionless tech for high-density, low-power memory.","keywords":["semiconductor device and structure","US-9853089","semiconductor memory","3D integration","junctionless transistor","memory density","low power memory","self-aligned transistors","semiconductor innovation","H01L patent"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853089","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853089","citation_suggestion":"Patentable. \"Semiconductor device and structure\" (US-9853089). https://patentable.app/patents/US-9853089","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853089","json":"https://patentable.app/api/llm-context/US-9853089","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:23:29.193Z"}