{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853104","patent":{"patent_number":"US-9853104","title":"Hydrogenated graphene with surface doping and bandgap tunability","assignee":null,"inventors":[],"filing_date":"2016-04-06T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; and tuning the bandgap."},"analysis":{"summary":"The patent for Hydrogenated Graphene with Surface Doping and Bandgap Tunability (US-9853104) introduces a pivotal advancement in materials science, specifically addressing a long-standing limitation of graphene for semiconductor applications. At its core, this innovation provides a method to transform graphene from a material with an inherent zero bandgap (which limits its use in 'on/off' switching for electronics) into a semiconductor with a dynamically tunable bandgap.\n\nThe primary problem this technology solves is graphene's metallic-like conductivity, which prevents its direct application in transistors and other digital electronic components. Traditional methods for inducing a bandgap often compromise graphene's superior properties or lack precise control. This invention circumvents these issues by offering a robust and controllable approach.\n\nThe key technical approach involves several steps: first, preparing high-quality graphene flakes or films on a standard SiO2/Si substrate. Second, exposing this graphene to hydrogen plasma, a process termed hydrogenation. This chemical modification induces a majority carrier type (surface doping) and, crucially, creates a measurable bandgap within the graphene structure. The most innovative aspect is the subsequent ability to apply an external electric field to the hydrogenated graphene, allowing for the precise and dynamic tuning of this newly created bandgap.\n\nThe business value and applications are substantial. This technology unlocks graphene's potential for next-generation electronics, enabling the development of ultra-low power, high-speed transistors, flexible displays, highly sensitive sensors, and advanced optoelectronic devices. Its compatibility with existing semiconductor fabrication processes reduces integration barriers, accelerating market adoption.\n\nThe market opportunity is vast, spanning the entire electronics industry, from consumer devices and IoT to automotive and aerospace. By providing a scalable and controllable method to engineer graphene's electronic properties, this invention positions itself as a foundational technology for future semiconductor innovations, promising significant competitive advantages for companies that adopt or license this approach. This invention could lead to substantial energy efficiency gains and performance improvements across a wide array of electronic systems.","layman_explanation":"### What Problem Does This Solve?\nImagine trying to build a light switch, but your electrical wire is always 'on.' No matter what you do, electricity keeps flowing. That's essentially the challenge faced with graphene, a revolutionary material often called a 'wonder material' for its incredible properties. Graphene is super conductive and extremely strong, making it ideal for future electronics. However, unlike silicon, which forms the backbone of today's computer chips, graphene doesn't have a 'bandgap.' A bandgap is like an energy barrier that allows a material to switch between conducting electricity ('on') and not conducting electricity ('off'). Without this 'off' switch, graphene couldn't be used to build the fundamental components of modern electronics, like transistors, which need to switch rapidly. This patent directly addresses that core limitation, turning graphene into a viable semiconductor material.\n\n### How Does It Work?\nThis innovation, known as Hydrogenated Graphene with Surface Doping and Bandgap Tunability, doesn't just try to force a bandgap; it engineers one with precision. Think of it like this: you have a perfectly smooth, super-fast highway (the graphene). We then gently spray this highway with a special 'mist' of hydrogen atoms using a very controlled process called 'hydrogen plasma.' When these hydrogen atoms settle on the graphene, they create tiny, controlled 'speed bumps' on the highway. These speed bumps are the 'bandgap' – they make it harder for electrons (our cars) to zoom through freely, effectively creating an 'off' state.\n\nBut here's the clever part: once these speed bumps are in place, we can apply a small electric 'push' or 'pull' (an electric field) to the highway. This electric field can actually make the speed bumps bigger or smaller, or even change their characteristics. This means we can dynamically 'tune' the bandgap – we can control how much resistance the electrons face. It's like having a dynamic traffic controller that can adjust the flow of traffic on demand. This also inherently 'dopes' the surface, giving the graphene a preferred type of charge carrier, which is crucial for building functional electronic devices.\n\n### Why Does This Matter?\nThis invention is a monumental step for the electronics industry. The ability to create and, more importantly, *tune* a bandgap in graphene means we can finally harness its full potential. This translates into several significant business advantages:\n\n1.  **Ultra-Low Power Devices:** With a reliable 'off' switch, electronic components made from this material can consume dramatically less power, leading to longer battery life for mobile devices and massive energy savings in data centers.\n2.  **Faster Performance:** While hydrogenation slightly alters graphene's pristine conductivity, the overall ability to create efficient switches can lead to faster-performing processors and communication devices compared to current technologies.\n3.  **Flexible and Versatile Electronics:** Graphene's inherent flexibility, combined with this new tunability, opens doors for truly flexible displays, wearable sensors, and bendable circuits that maintain high performance.\n4.  **New Market Opportunities:** This technology unlocks entirely new product categories and allows existing ones to be reimagined. Companies can develop novel sensors, optoelectronic devices, and high-frequency components that were previously impossible or impractical.\n5.  **Competitive Edge:** Early adoption or licensing of this patent could provide a significant competitive advantage in the rapidly evolving semiconductor and advanced materials markets, positioning companies as leaders in next-generation electronics.\n\n### What's Next?\nThis patent lays the groundwork for a new generation of electronic components. We can expect to see Hydrogenated Graphene with Surface Doping and Bandgap Tunability integrated into advanced prototypes within the next few years, potentially leading to commercial products within a decade. It will likely drive innovation in areas like artificial intelligence hardware, quantum computing, and sustainable electronics. Investors should view this as a foundational technology, capable of generating substantial long-term value by enabling entirely new capabilities and efficiencies across the tech landscape.","technical_analysis":"The patent US-9853104, titled \"Hydrogenated Graphene with Surface Doping and Bandgap Tunability,\" presents a significant breakthrough in graphene functionalization, specifically targeting its integration into semiconductor devices. Graphene, a single atomic layer of carbon, possesses exceptional electrical and thermal properties but is fundamentally limited by its zero bandgap, rendering it unsuitable for direct use in transistor-based logic circuits. This invention provides a comprehensive method to overcome this inherent limitation through controlled hydrogenation and electric field manipulation.\n\n**Technical Architecture and Process Flow:**\nThe core of this technology revolves around a multi-step process for preparing and modifying graphene. It begins with: \n1.  **Graphene Preparation:** High-quality graphene flakes or chemical vapor deposition (CVD) grown graphene films are utilized. These are typically prepared on a SiO2/Si substrate, a standard platform in semiconductor manufacturing, ensuring compatibility with existing processes.\n2.  **Hydrogen Plasma Exposure:** The prepared graphene is then exposed to hydrogen plasma. This is a critical step where hydrogen atoms interact with the graphene lattice. Plasma exposure offers a highly controlled environment, allowing for precise regulation of parameters like plasma power, pressure, and exposure time, which directly influence the degree of hydrogenation.\n3.  **Hydrogenation of Graphene:** During plasma exposure, hydrogen atoms bond to the carbon atoms in the graphene lattice. This sp3 hybridization of carbon atoms disrupts the pristine sp2 conjugated system of graphene. This disruption locally alters the electronic structure, leading to the opening of a bandgap. Furthermore, this process naturally induces a majority carrier type, effectively achieving surface doping without the need for additional dopants.\n4.  **Bandgap Creation:** The formation of sp3 bonds breaks the symmetry of the graphene lattice and introduces localized states, thereby creating a measurable bandgap. The width of this bandgap is dependent on the density and distribution of hydrogen atoms.\n5.  **Electric Field Application and Tunability:** The most innovative aspect is the application of an external electric field to the hydrogenated graphene. This electric field acts as a gate voltage, which can dynamically modulate the energy levels of the hydrogenated regions. By adjusting the electric field, the bandgap can be precisely tuned, allowing for dynamic control over the material's electronic properties. This tunability means the material can be reconfigured on-demand for various functionalities, from a highly conductive state to a semiconducting state with a specific bandgap.\n\n**Implementation Details and Algorithm Specifics:**\nThe hydrogenation process is not merely a random attachment of hydrogen. The plasma parameters must be carefully calibrated to achieve uniform and controllable hydrogenation. Over-hydrogenation can lead to excessive defects and degradation of carrier mobility, while under-hydrogenation may result in an insufficient bandgap. The 'algorithm' for bandgap tuning is embedded in the device's gate control. As the electric field (gate voltage) is varied, the electrostatic potential across the hydrogenated graphene changes, which in turn shifts the energy bands relative to the Fermi level, effectively tuning the bandgap. This can be understood through density functional theory (DFT) calculations, which predict how hydrogen adsorption and external fields modify graphene's electronic structure.\n\n**Integration Patterns and Performance Characteristics:**\nThis technology is designed for integration into standard semiconductor device architectures, particularly field-effect transistors (FETs). The hydrogenated graphene would serve as the channel material, with source, drain, and gate electrodes fabricated using conventional photolithography and deposition techniques. The SiO2/Si substrate acts as the gate dielectric and back gate, providing the electric field for bandgap tuning. Performance characteristics are expected to include: \n*   **Low Power Consumption:** The ability to achieve a robust 'off' state via a tunable bandgap significantly reduces leakage currents, leading to ultra-low power operation.\n*   **High Switching Speed:** While hydrogenation might slightly reduce intrinsic carrier mobility compared to pristine graphene, the ability to create a well-defined bandgap enables efficient switching, potentially rivaling or exceeding silicon in specific high-frequency applications.\n*   **Versatility:** The dynamic tunability allows for multi-functional devices where the same component can serve different roles based on the applied electric field.\n\n**Code-Level Implications:**\nWhile this patent is hardware-centric, its implications extend to software and firmware development for device control. Future device drivers and operating systems would need to incorporate APIs and control algorithms to manage the electric field applied to hydrogenated graphene components, enabling dynamic bandgap tuning. This could lead to novel power management units (PMUs) and reconfigurable hardware architectures where device characteristics are software-defined, offering unprecedented flexibility in system design. The ability to programmatically adjust material properties adds a new layer of complexity and opportunity for advanced control systems.","business_analysis":"The patent for Hydrogenated Graphene with Surface Doping and Bandgap Tunability (US-9853104) represents a monumental leap in materials science with profound implications for the global electronics industry. Graphene, despite its 'wonder material' status, has faced a critical barrier to widespread adoption in semiconductors: its zero bandgap. This innovation directly addresses this challenge, unlocking a multi-trillion-dollar market opportunity.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to exceed $1 trillion by 2030. Within this, the market for advanced materials and novel electronic components is a rapidly growing segment. Graphene's inability to function as a true semiconductor has kept it largely out of mainstream digital logic and power electronics. This patent changes that by providing a scalable and tunable method to induce a bandgap, immediately opening up significant portions of the semiconductor market to graphene-based solutions. Target markets include:\n*   **High-Performance Computing:** CPUs, GPUs, and memory with lower power consumption and higher speeds.\n*   **Mobile and IoT Devices:** Longer battery life, smaller form factors, and enhanced functionality.\n*   **Flexible and Wearable Electronics:** Truly flexible, durable, and energy-efficient devices.\n*   **Optoelectronics:** Tunable optical properties for advanced sensors, displays, and communication devices.\n*   **Automotive and Aerospace:** Robust, lightweight, and efficient components for critical systems.\n\n**Competitive Advantages:**\nThis technology offers several compelling competitive advantages:\n1.  **Performance Superiority:** Graphene's inherent high carrier mobility, even with hydrogenation, suggests devices built with this technology could offer higher operating frequencies and lower power dissipation compared to traditional silicon.\n2.  **Dynamic Tunability:** The ability to tune the bandgap with an electric field is a unique selling proposition. This allows for reconfigurable devices, multi-functional components, and adaptive electronics, offering capabilities currently unavailable with static material properties.\n3.  **Scalability and Compatibility:** The use of hydrogen plasma and standard SiO2/Si substrates makes this process compatible with existing semiconductor fabrication infrastructure, significantly reducing the capital expenditure and time-to-market compared to entirely new material platforms.\n4.  **Energy Efficiency:** By enabling a robust 'off' state, devices can achieve ultra-low leakage currents, leading to substantial energy savings, a critical factor for sustainable computing and extended battery life.\n\n**Revenue Potential and Business Models:**\nRevenue potential is significant. Companies could pursue various business models:\n*   **Material Licensing:** Licensing the patent for Hydrogenated Graphene with Surface Doping and Bandgap Tunability to major semiconductor manufacturers.\n*   **Specialty Material Production:** Producing and selling hydrogenated graphene films or wafers to device fabricators.\n*   **Device Manufacturing:** Developing and manufacturing specific graphene-based components (e.g., tunable transistors, reconfigurable logic gates, advanced sensors) that leverage this technology.\n*   **IP-Driven Partnerships:** Forming joint ventures or strategic alliances with industry leaders to co-develop and commercialize products.\n\n**Strategic Positioning:**\nThis innovation positions early adopters at the forefront of the next wave of semiconductor technology. It enables a strategic pivot from incremental improvements in silicon to disruptive advancements using 2D materials. Companies that invest in this technology can differentiate themselves by offering unparalleled performance, energy efficiency, and functional flexibility. It also provides a strong defensive intellectual property position against competitors reliant on older graphene functionalization methods or traditional silicon.\n\n**ROI Projections:**\nInvestment in this technology promises substantial ROI. The ability to create higher-performing, more energy-efficient components will command premium pricing and capture significant market share. Furthermore, the reduced manufacturing complexity due to process compatibility, coupled with the long-term demand for advanced electronics, suggests a rapid return on investment. The potential for licensing revenue from a foundational patent like this can also generate high-margin, recurring income. This patent isn't just an incremental improvement; it's a foundational technology that could redefine the economics of semiconductor manufacturing and device performance for decades to come.","faqs":[{"answer":"Hydrogenated Graphene with Surface Doping and Bandgap Tunability refers to a groundbreaking patent (US-9853104) that details a novel method for modifying graphene, a single-atom-thick sheet of carbon, to make it suitable for advanced electronic applications. Traditionally, graphene has an inherent zero bandgap, meaning it always conducts electricity and cannot be easily switched 'on' or 'off' like a semiconductor. This limits its use in components like transistors, which require precise control over electron flow.\n\nThe innovation addresses this by describing a process where graphene is exposed to hydrogen plasma. This 'hydrogenation' causes hydrogen atoms to bond to the graphene surface, which fundamentally alters its electronic structure. This alteration creates a measurable bandgap, effectively giving graphene an 'off' switch.\n\nFurthermore, the process also induces a 'majority carrier type' on the graphene surface, akin to doping in traditional semiconductors. The most significant aspect is the ability to dynamically tune this created bandgap by applying an external electric field. This means the material's electrical properties can be precisely adjusted on demand, offering unprecedented flexibility for device design. This technology is a critical step towards realizing the full potential of graphene in high-performance, energy-efficient electronics. Keywords: hydrogenated graphene, bandgap tunability, graphene semiconductor, surface doping, advanced materials.","question":"What is Hydrogenated Graphene with Surface Doping and Bandgap Tunability?"},{"answer":"The mechanism behind Hydrogenated Graphene with Surface Doping and Bandgap Tunability involves a series of carefully controlled steps to modify graphene's electronic properties. First, a high-quality graphene film or flakes are prepared, typically on a silicon dioxide/silicon (SiO2/Si) substrate, which is a standard in semiconductor manufacturing.\n\nNext, this graphene is exposed to a hydrogen plasma. This plasma consists of highly reactive hydrogen species that gently and uniformly attach to the carbon atoms of the graphene lattice. This process, known as hydrogenation, induces a change in the bonding configuration of the carbon atoms from sp2 (planar) to sp3 (tetrahedral-like), disrupting the graphene's perfect hexagonal symmetry. This symmetry breaking is what opens an energy bandgap, transforming the semimetallic graphene into a semiconductor.\n\nSimultaneously, the hydrogenation process introduces a 'majority carrier type' on the graphene surface, which is crucial for controlling charge flow. The final and most innovative step involves applying an external electric field to this hydrogenated graphene. By varying the strength and direction of this electric field, the energy levels within the material can be modulated, allowing for the precise and dynamic tuning of the bandgap width. This dynamic tunability is key to creating adaptable and reconfigurable electronic components. Keywords: graphene hydrogenation, hydrogen plasma, bandgap creation, electric field tuning, sp3 hybridization, electronic structure.","question":"How does Hydrogenated Graphene with Surface Doping and Bandgap Tunability work?"},{"answer":"The primary problem that the Hydrogenated Graphene with Surface Doping and Bandgap Tunability patent solves is graphene's inherent zero bandgap. While graphene possesses extraordinary properties like high electron mobility, strength, and transparency, its lack of a bandgap has severely limited its application in active electronic components such as transistors, which require a distinct 'on' and 'off' state.\n\nWithout a bandgap, graphene behaves more like a metal, conducting electricity continuously, making it unsuitable for the precise switching required in digital logic circuits. Prior attempts to induce a bandgap often involved methods that either introduced too many defects, degraded graphene's other desirable properties (like electron mobility), or lacked the crucial element of tunability.\n\nThis invention provides a scalable, controllable, and dynamically tunable solution, thereby unlocking graphene's potential as a viable semiconductor material. It enables the creation of efficient 'on/off' switches, paving the way for graphene to be used in next-generation, high-performance, and energy-efficient electronic devices. Keywords: zero bandgap, graphene limitations, semiconductor problem, transistor functionality, electronic switching, material science challenge.","question":"What problem does Hydrogenated Graphene with Surface Doping and Bandgap Tunability solve?"},{"answer":"The patent US-9853104, titled \"Hydrogenated Graphene with Surface Doping and Bandgap Tunability,\" lists inventors and assignees as part of its official record. While the provided patent data does not explicitly list the names of the inventors or the assignee in the prompt, such information is publicly available through patent databases. Typically, these innovations are the result of dedicated research by scientists and engineers within academic institutions, corporate R&D departments, or specialized research labs.\n\nInventors are the individuals who conceived the inventive subject matter, and the assignee is usually the company or organization that owns the patent rights. This type of advanced material science research often involves interdisciplinary teams working at the forefront of nanotechnology and condensed matter physics. The development of Hydrogenated Graphene with Surface Doping and Bandgap Tunability highlights the collaborative and often extensive efforts required to bring such complex scientific breakthroughs to fruition. Keywords: patent inventors, patent assignee, graphene research, material science, nanotechnology, US-9853104.","question":"Who invented Hydrogenated Graphene with Surface Doping and Bandgap Tunability?"},{"answer":"The Hydrogenated Graphene with Surface Doping and Bandgap Tunability patent (US-9853104) offers several transformative benefits for the electronics industry and beyond.\n\nFirstly, it enables **dynamic bandgap control**, allowing the electrical properties of graphene to be precisely adjusted on demand using an electric field. This unprecedented tunability allows for the creation of reconfigurable electronic components that can adapt to different functionalities or operating conditions, leading to more versatile and efficient devices.\n\nSecondly, it facilitates **ultra-low power consumption**. By providing a robust and controllable 'off' state, devices made with this technology can significantly reduce leakage currents, leading to extended battery life for mobile devices and substantial energy savings in data centers and other high-performance computing environments.\n\nThirdly, it offers **enhanced performance and speed**. While hydrogenation can slightly alter intrinsic mobility, the ability to create a well-defined bandgap allows for efficient switching, potentially leading to faster processors and high-frequency devices. This material also leverages graphene's inherent properties like high thermal conductivity.\n\nFinally, the process is **scalable and compatible** with existing semiconductor manufacturing techniques, making it easier to integrate into current production lines and accelerate its commercial adoption. This reduces the barriers to entry for companies seeking to innovate with graphene. Keywords: graphene benefits, energy efficiency, dynamic control, scalable technology, high performance electronics, flexible devices.","question":"What are the key benefits of Hydrogenated Graphene with Surface Doping and Bandgap Tunability?"},{"answer":"Hydrogenated Graphene with Surface Doping and Bandgap Tunability (US-9853104) differentiates itself significantly from prior art methods for graphene bandgap engineering primarily through its combination of precise control and dynamic tunability.\n\nMany prior art approaches, such as forming graphene nanoribbons (GNRs) or chemically functionalizing graphene with oxygen or fluorine, often led to static bandgaps that were difficult to control, introduced significant defects, or severely degraded graphene's desirable properties like high carrier mobility. GNRs, for instance, are prone to edge disorder, while heavy chemical functionalization can turn graphene into an insulator, losing its semiconductor utility.\n\nThis invention, in contrast, uses a controlled hydrogen plasma process for hydrogenation, which is a cleaner and more uniform method for opening a bandgap. Crucially, it introduces the ability to dynamically tune this bandgap using an external electric field. This dynamic control is largely absent in previous methods, which typically resulted in a fixed bandgap. The combination of controlled hydrogenation, induced surface doping, and electric field tunability provides a more robust, versatile, and scalable solution, preserving more of graphene's intrinsic advantages while overcoming its fundamental zero bandgap limitation. Keywords: prior art comparison, graphene bandgap engineering, dynamic tunability, chemical functionalization, graphene nanoribbons, plasma hydrogenation.","question":"How is Hydrogenated Graphene with Surface Doping and Bandgap Tunability different from prior art?"},{"answer":"The Hydrogenated Graphene with Surface Doping and Bandgap Tunability patent (US-9853104) is poised to have a transformative impact across a wide array of industries that rely on advanced electronic components.\n\n**Semiconductor Industry:** This is the most direct impact, as the technology enables graphene to become a viable material for transistors, logic gates, and memory, potentially leading to a new generation of microprocessors that are faster, smaller, and more energy-efficient than current silicon-based chips.\n\n**Consumer Electronics:** Devices like smartphones, tablets, wearables, and smart home gadgets will benefit from extended battery life, enhanced performance, and new form factors (e.g., truly flexible displays and bendable electronics) due to the low power consumption and versatile nature of this material.\n\n**Internet of Things (IoT):** The ability to create ultra-low power and highly sensitive sensors will be critical for the proliferation of IoT devices, enabling more sophisticated and autonomous smart environments.\n\n**Automotive and Aerospace:** Lightweight, durable, and energy-efficient electronic components are highly desirable for vehicles and aircraft, where performance, reliability, and weight savings are paramount.\n\n**Medical and Healthcare:** Advanced biosensors, flexible diagnostic devices, and implantable electronics could be developed with greater precision and biocompatibility.\n\n**Optoelectronics:** The tunable bandgap could lead to novel light-emitting diodes, photodetectors, and optical modulators with dynamically adjustable properties for displays, communication, and imaging applications. Keywords: industry impact, semiconductor manufacturing, consumer electronics, IoT, flexible electronics, optoelectronics, automotive tech.","question":"What industries will Hydrogenated Graphene with Surface Doping and Bandgap Tunability impact?"},{"answer":"The patent for Hydrogenated Graphene with Surface Doping and Bandgap Tunability, identified by the number US-9853104, has specific dates associated with its lifecycle as an intellectual property asset.\n\nThe **filing date** for this patent was **2016-04-06 (April 6, 2016)**. This is the date when the patent application was officially submitted to the patent office, marking the beginning of the examination process and establishing the priority date for the invention.\n\nThe **publication date** for this patent was **2017-12-26 (December 26, 2017)**. This is the date when the patent was officially granted and published by the patent office, making its full details publicly accessible. The publication signifies that the patent examiner has determined the invention meets the criteria for patentability, including novelty, non-obviousness, and utility. These dates are crucial for understanding the intellectual property landscape and the timeline of this significant technological advancement. Keywords: patent filing date, patent publication date, US-9853104 timeline, intellectual property, patent lifecycle.","question":"When was Hydrogenated Graphene with Surface Doping and Bandgap Tunability filed/granted?"},{"answer":"The commercial applications of Hydrogenated Graphene with Surface Doping and Bandgap Tunability (US-9853104) are extensive and span multiple high-growth technology sectors, driven by its unique ability to transform graphene into a tunable semiconductor.\n\n**Next-Generation Transistors and Microprocessors:** The most direct application is in creating ultra-low power, high-speed transistors. This could lead to more efficient CPUs and GPUs for computers, servers, and AI accelerators, reducing energy consumption and boosting performance.\n\n**Flexible and Wearable Electronics:** Graphene's inherent flexibility, combined with its new semiconductor properties, makes it ideal for truly bendable displays, smart textiles, integrated health monitors, and flexible sensors that can conform to irregular surfaces.\n\n**Advanced Sensors:** The tunable bandgap and surface doping allow for the development of highly sensitive and selective sensors for chemical, biological, and environmental monitoring. These could be used in medical diagnostics, industrial safety, and smart agriculture.\n\n**Energy-Efficient IoT Devices:** For the burgeoning Internet of Things market, this technology can enable devices with significantly extended battery life, allowing for more widespread deployment and reduced maintenance costs.\n\n**Optoelectronic Devices:** Tunable photodetectors, light-emitting diodes (LEDs), and optical modulators could be developed, offering new capabilities for high-speed data communication, advanced displays, and imaging technologies. Keywords: commercial applications, graphene electronics, flexible displays, IoT sensors, energy-efficient computing, optoelectronic devices, advanced semiconductors.","question":"What are the commercial applications of Hydrogenated Graphene with Surface Doping and Bandgap Tunability?"},{"answer":"Future developments for Hydrogenated Graphene with Surface Doping and Bandgap Tunability (US-9853104) are expected to build upon its foundational breakthrough, pushing the boundaries of material science and electronics. We can anticipate several key areas of advancement.\n\nOne significant area will be **optimization and refinement of the hydrogenation process**. Researchers will likely focus on even more precise control over hydrogen coverage and bonding sites to achieve finer bandgap tuning and minimize any potential degradation of carrier mobility. This could involve advanced plasma techniques or alternative functionalization methods that maintain tunability.\n\nAnother crucial development will be **integration with complex device architectures**. Expect to see the technology incorporated into more sophisticated integrated circuits, moving beyond single transistors to multi-component systems. This includes exploring its use in novel memory technologies, neuromorphic computing, and even quantum computing platforms, where its dynamic properties could offer unique advantages.\n\nFurthermore, **long-term stability and reliability studies** will be vital for commercialization. Ensuring that hydrogenated graphene maintains its tunable properties over extended periods and under various environmental stresses will be a key focus. Research into **hybrid materials** combining hydrogenated graphene with other 2D materials (like TMDs) could also lead to novel functionalities and enhanced performance. Ultimately, the goal is to fully scale production and integrate this tunable material into a wide range of commercially available, high-performance, and energy-efficient electronic products. Keywords: future graphene tech, advanced electronics, material optimization, device integration, quantum computing, long-term stability, hybrid materials.","question":"What are the future developments expected for Hydrogenated Graphene with Surface Doping and Bandgap Tunability?"}],"topics":["hydrogenated graphene","graphene bandgap","bandgap tunability","surface doping","graphene semiconductor","quest","generation","electronic"],"tech_cluster":null},"seo":{"title":"Hydrogenated Graphene with Tunable Bandgap - Patent US-9853104","description":"Discover the Hydrogenated Graphene with Surface Doping and Bandgap Tunability patent. Innovative method to create and tune graphene's bandgap for next-gen semiconductors.","keywords":["hydrogenated graphene","graphene bandgap","bandgap tunability","surface doping","graphene semiconductor","US-9853104","graphene electronics","2D materials","plasma hydrogenation","semiconductor innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853104","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853104","citation_suggestion":"Patentable. \"Hydrogenated graphene with surface doping and bandgap tunability\" (US-9853104). https://patentable.app/patents/US-9853104","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853104","json":"https://patentable.app/api/llm-context/US-9853104","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:15.978Z"}