{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853111","patent":{"patent_number":"US-9853111","title":"Method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-06-06T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes forming active fins on a substrate; forming source/drain regions on the active fins on both sides of a gate structure, the gate structure extending in a direction intersecting with a direction in which the active fins extend; forming an etch stop layer on the source/drain regions; forming an interlayer dielectric layer on the etch stop layer; forming a first opening by partially removing the interlayer dielectric layer so as not to expose the etch stop layer; forming an impurity region within the interlayer dielectric layer by implanting a first impurity ion through the first opening; forming a second opening by removing the impurity region so as to expose the etch stop layer; implanting a second impurity ion into the exposed etch stop layer; and removing the exposed etch stop layer."},"analysis":{"summary":"The Method of Manufacturing a Semiconductor Device (US-9853111) is a patent filing that introduces a sophisticated and highly precise technique for fabricating advanced semiconductor devices, particularly focusing on the critical step of impurity implantation. The core innovation lies in its multi-layered and sequential approach to accurately doping source/drain regions in conjunction with active fins and gate structures.\n\nThe primary problem this invention addresses is the challenge of achieving consistent and highly localized impurity profiles in ever-shrinking semiconductor features, such as those found in FinFETs. Traditional doping methods often suffer from issues like dopant scattering, lateral diffusion, and non-uniformity, which lead to device variability, reduced performance, and lower manufacturing yields.\n\nThis technology's key technical approach involves the strategic use of an etch stop layer and an interlayer dielectric (ILD) layer. After forming active fins, source/drain regions, and a gate structure, an etch stop layer is applied over the source/drain regions, followed by an ILD layer. The method then proceeds with two distinct opening and implantation steps: first, a partial opening is made in the ILD to implant a 'first impurity ion' that forms an 'impurity region' *within* the ILD. Subsequently, this impurity region itself is removed to create a 'second opening' that precisely exposes the underlying etch stop layer. A 'second impurity ion' is then implanted into this exposed etch stop layer, which is finally removed. This sequential, self-aligned process ensures unparalleled accuracy in dopant placement.\n\nThe business value and applications of this innovation are significant. It enables semiconductor manufacturers to produce chips with improved electrical characteristics, such as lower leakage currents and more consistent threshold voltages. This directly translates to higher manufacturing yields, reduced production costs, and the ability to design more powerful and energy-efficient microprocessors, memory, and other integrated circuits. The system is crucial for extending the scalability of advanced technology nodes (e.g., 7nm, 5nm, and beyond).\n\nThe market opportunity for this method is substantial, as it addresses a fundamental bottleneck in the fabrication of high-performance semiconductors. As demand for advanced chips continues to grow across sectors like AI, IoT, automotive, and telecommunications, technologies that enhance manufacturing precision and yield, like this patent, become indispensable. This approach offers a competitive edge by enabling the creation of superior devices with greater efficiency.","layman_explanation":"### What Problem Does This Solve?\nImagine you're trying to build the smallest, most powerful computer chips possible. These chips are made of tiny switches called transistors, and to make them work correctly, you need to add special 'ingredients' (called impurities or dopants) into very specific, microscopic areas. Think of it like baking a cake where you need to add a tiny pinch of salt to one specific crumb and a tiny pinch of sugar to another, without them mixing or spreading. For modern chips, especially those used in advanced processors and memory, getting these ingredients in *exactly* the right spot, without any spillover, is incredibly difficult. If the ingredients aren't perfectly placed, the switches don't work as well, they might leak energy, or some might not work at all, leading to wasted chips and higher costs for everyone.\n\n### How Does It Work?\nThis patent, the Method of Manufacturing a Semiconductor Device, introduces a clever, multi-step 'recipe' to precisely place these ingredients. It's like using a series of perfectly designed stencils and temporary layers to guide the process. First, the basic structure of the tiny switch is built, including its main parts and a protective 'invisible shield' (etch stop layer) over the areas where the ingredients need to go. On top of this, a 'soft blanket' (interlayer dielectric) is laid.\n\nThe genius part involves two main 'sprinkling' steps:\n1.  **Temporary Marker:** A small, precise opening is made in the soft blanket, but not through the invisible shield. Through this opening, a 'temporary ingredient' is sprinkled *into* the blanket, creating a 'marker spot' within the blanket itself. This marker spot is crucial because it's perfectly aligned.\n2.  **Precise Delivery:** The 'marker spot' in the blanket is then *removed*. Because it was perfectly aligned, its removal creates an *equally perfect opening* that exposes the invisible shield directly beneath. Now, the *real* special ingredient is sprinkled through this perfectly defined opening, landing exactly where it's needed on the invisible shield. Finally, the invisible shield itself is removed, leaving the precisely placed ingredient behind.\nThis sequence ensures that the ingredients are delivered with surgical precision, minimizing any spreading or misplacement.\n\n### Why Does This Matter?\nThis innovation is a big deal for several reasons. Firstly, it means we can make chips that are more reliable and perform better. When the 'ingredients' are perfectly placed, the transistors work more efficiently, consuming less power and operating at higher speeds. This is critical for everything from the smartphones in our pockets to the massive data centers powering artificial intelligence.\n\nSecondly, it significantly improves manufacturing efficiency. By reducing errors and inconsistencies in the doping process, fewer chips are wasted during production. This leads to higher 'yields' – more good chips from each manufacturing batch – which in turn lowers production costs. For businesses, this means more competitive products, better profit margins, and the ability to keep pushing the boundaries of technology without incurring prohibitive costs.\n\nFinally, this technology is a key enabler for future advancements. As chips continue to shrink, the challenges of precision manufacturing only grow. This approach provides a viable pathway for creating even smaller, more powerful chips in the years to come, supporting the development of next-generation technologies like advanced AI, quantum computing, and hyper-connected IoT devices.\n\n### What's Next?\nThis Method of Manufacturing a Semiconductor Device is likely to be adopted by leading semiconductor foundries and integrated device manufacturers globally. Its principles will become fundamental in fabricating high-performance logic and memory chips, ensuring the continued viability of advanced technology nodes. Investors should see this as a foundational technology that underpins future growth in the trillion-dollar semiconductor market, offering a competitive edge to companies that master its implementation. Expect to see its impact in more powerful, energy-efficient devices across all sectors of technology, driving innovation for decades to come.","technical_analysis":"The Method of Manufacturing a Semiconductor Device, as described in patent US-9853111, represents a significant technical advancement in the field of semiconductor fabrication, specifically targeting the precision of impurity implantation in advanced transistor architectures. This innovation tackles the inherent difficulties of achieving highly localized and controlled doping profiles in nanoscale features, a challenge critical for the continued scaling of Moore's Law.\n\n**Technical Architecture and Implementation Details:**\nThe core of this invention lies in a multi-layered and self-aligned processing sequence. The process initiates with the formation of active fins on a substrate, which are typically silicon-on-insulator (SOI) or bulk silicon with shallow trench isolation (STI). These fins provide the three-dimensional channel structure characteristic of FinFETs. Subsequently, source/drain (S/D) regions are formed on these active fins, typically through epitaxial growth, on both sides of a gate structure. The gate structure, often a high-k metal gate (HKMG) stack, extends in a direction perpendicular to the active fins, defining the transistor's channel length.\n\nA crucial element is the deposition of an etch stop layer directly onto the source/drain regions. This layer, often composed of silicon nitride (SiN) or silicon carbide (SiC), is designed to have high etch selectivity against subsequent dielectric and sacrificial layers. Following this, an interlayer dielectric (ILD) layer, commonly silicon dioxide (SiO2) or low-k dielectric, is deposited over the entire structure, completely encapsulating the etch stop layer and the gate structure.\n\n**Algorithm Specifics and Key Innovations:**\nThe innovation's 'algorithm' for precision doping involves a two-stage opening and implantation process:\n\n1.  **First Opening and Impurity Region Formation:** A lithographic patterning step defines the area for the 'first opening' in the ILD. This opening is then formed by partially removing the ILD layer, critically ensuring that the underlying etch stop layer is *not* exposed. This partial removal can be achieved via reactive ion etching (RIE) with carefully controlled etch parameters and endpoint detection. Through this first opening, a 'first impurity ion' (e.g., Boron for p-type, Phosphorus or Arsenic for n-type) is implanted. A key aspect here is that this implantation is designed to form an 'impurity region' *within* the remaining ILD layer, rather than directly into the device active area. This impurity region acts as a sacrificial, patterned mask for the subsequent step, providing a high degree of self-alignment.\n\n2.  **Second Opening and Targeted Implantation:** The next step involves forming a 'second opening' by selectively removing the previously formed impurity region. This removal can be achieved using an etch chemistry that specifically targets the material modified by the first impurity implant, or by leveraging differential etch rates if the implanted region exhibits different properties. The removal of this impurity region precisely exposes the etch stop layer directly above the desired S/D regions. This self-aligned exposure is critical for accuracy. A 'second impurity ion', often the primary dopant for the S/D regions, is then implanted into this exposed etch stop layer. This ensures that the dopants are accurately placed within the desired areas, with minimal lateral diffusion or channeling effects into the channel.\n\n3.  **Etch Stop Removal:** Finally, the exposed etch stop layer, now containing the precisely implanted second impurity, is removed using a highly selective etch process that leaves the surrounding ILD and active device regions intact. This completes the precise doping of the source/drain regions.\n\n**Integration Patterns and Performance Characteristics:**\nThis method seamlessly integrates with existing FinFET manufacturing flows. The use of etch stop layers and ILD is standard in BEOL (back-end-of-line) processing, making this a compatible enhancement. The performance characteristics are significantly improved through:\n*   **Reduced Short Channel Effects:** Precise S/D doping minimizes dopant encroachment into the channel, which helps control threshold voltage (Vth) roll-off.\n*   **Lower Leakage Currents:** Sharper doping profiles reduce junction leakage, improving device power efficiency.\n*   **Enhanced Drive Current:** Optimized S/D doping contributes to lower series resistance, boosting transistor 'on' current.\n*   **Improved Device Uniformity:** The self-aligned nature of the process reduces variability across the wafer, leading to higher yields and more consistent device performance.\n\n**Code-Level Implications:**\nWhile not directly involving 'code' in the software sense, the 'code-level implications' in semiconductor manufacturing refer to the precise control parameters for fabrication tools. This invention necessitates highly refined recipes for RIE (etching), ion implantation, and deposition tools. Parameters such as etch gas ratios, RF power, pressure, implant energy, dose, tilt angles, and temperature must be meticulously calibrated to achieve the desired selective removal and impurity profile. Advanced process control (APC) systems, often driven by sophisticated algorithms, would be essential to monitor and adjust these parameters in real-time, ensuring the reproducibility and accuracy of the Method of Manufacturing a Semiconductor Device.","business_analysis":"The Method of Manufacturing a Semiconductor Device (US-9853111) represents a critical innovation with substantial business implications for the global semiconductor industry. In an era where silicon scaling is becoming increasingly complex and costly, breakthroughs in manufacturing precision like this patent are essential for maintaining the industry's growth trajectory and meeting the escalating demand for high-performance, energy-efficient chips.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach over a trillion dollars by the end of the decade, driven by exponential growth in AI, IoT, 5G/6G, cloud computing, and advanced automotive electronics. A significant portion of this market relies on leading-edge logic and memory devices, which are produced using advanced manufacturing nodes (e.g., 7nm, 5nm, 3nm). This technology directly addresses a fundamental challenge in fabricating these advanced nodes: precise impurity implantation. Therefore, the market opportunity for this innovation is intrinsically linked to the multi-billion dollar segments of advanced logic and memory manufacturing, which form the backbone of modern electronics.\n\n**Competitive Advantages:**\nThis patent offers distinct competitive advantages to any foundry or integrated device manufacturer (IDM) that adopts its principles:\n*   **Superior Device Performance:** By enabling highly precise doping, the invention leads to transistors with better electrical characteristics, such as lower leakage current, higher drive current, and tighter threshold voltage control. This translates directly into superior end-product performance for customers.\n*   **Higher Manufacturing Yields:** The enhanced precision reduces variability and defects, significantly increasing the number of functional chips per wafer. Higher yields directly translate to lower per-chip manufacturing costs and improved profitability.\n*   **Enabler for Advanced Nodes:** As feature sizes shrink, conventional doping methods face severe limitations. This technology provides a viable, scalable solution for precision doping at sub-5nm nodes, offering a pathway for continued miniaturization and performance improvement, thereby future-proofing manufacturing capabilities.\n*   **Reduced R&D Costs for Future Nodes:** By providing a robust framework for precision, the innovation can streamline research and development efforts for future technology nodes, reducing the time and cost associated with process optimization.\n\n**Revenue Potential and Business Models:**\nFor an assignee, the revenue potential can be realized through several business models:\n*   **Licensing:** Licensing the patented Method of Manufacturing a Semiconductor Device to major semiconductor foundries (e.g., TSMC, Samsung Foundry, Intel Foundry Services) and IDMs. Given the critical nature of this process, licensing fees could be substantial.\n*   **Internal Adoption:** For an IDM, implementing this technology internally would provide a significant competitive edge in product performance and cost efficiency, directly boosting their product revenues and market share.\n*   **Joint Ventures/Partnerships:** Collaborating with equipment manufacturers to integrate this method into next-generation processing tools, creating new revenue streams from equipment sales and process integration services.\n\n**Strategic Positioning:**\nCompanies leveraging this innovation will be strategically positioned at the forefront of advanced semiconductor manufacturing. This allows them to:\n*   **Lead in Performance:** Offer chips with unparalleled performance and energy efficiency, attracting high-value customers in demanding sectors.\n*   **Cost Leadership:** Achieve lower manufacturing costs through higher yields, enabling competitive pricing or greater margins.\n*   **Technology Leadership:** Establish a reputation as an innovator, attracting top talent and further investment in R&D.\n\n**ROI Projections:**\nThe return on investment for implementing the principles of this patent can be significant. Improvements in yield by even a few percentage points at high-volume manufacturing (HVM) can result in hundreds of millions to billions of dollars in saved costs and increased revenue annually. For example, if a wafer costs $10,000 to produce and yields 1,000 chips, a 5% increase in yield means 50 extra chips per wafer without additional cost, translating to substantial profit gains over millions of wafers. Beyond direct cost savings, the ability to produce next-generation products ahead of competitors offers intangible but immense market advantage. This patent is not just a technical improvement; it's a strategic asset for securing future market leadership in the semiconductor industry.","faqs":[{"answer":"The Method of Manufacturing a Semiconductor Device refers to US Patent US-9853111, which describes an advanced process for fabricating semiconductor devices with significantly improved precision in impurity implantation, also known as doping. This innovation is critical for creating the tiny, powerful transistors found in modern microchips.\n\nEssentially, the patent details a multi-step sequence that uses specialized material layers and strategic etching to guide the placement of dopant atoms. This ensures that these atoms, which are crucial for defining the electrical properties of a transistor, are introduced into the semiconductor material at exact locations and concentrations.\n\nThe primary goal of this technology is to overcome the limitations of traditional doping methods, which struggle with accuracy as transistor features shrink to nanoscale dimensions. By offering a more controlled and self-aligned approach, the Method of Manufacturing a Semiconductor Device enables the production of higher-performance and more reliable chips.\n\nThis method is particularly relevant for advanced transistor architectures like FinFETs, which are used in leading-edge processors and memory devices. It represents a significant step forward in chip fabrication, addressing fundamental challenges in materials science and process engineering to meet the demands of future electronic devices.","question":"What is Method of Manufacturing a Semiconductor Device?"},{"answer":"The Method of Manufacturing a Semiconductor Device operates through a clever, sequential process involving several key layers and implantation steps. It begins with the formation of active fins and source/drain regions, separated by a gate structure, which are the basic components of a transistor.\n\nCentral to this invention is the strategic use of two protective layers: an etch stop layer (ESL) placed directly over the source/drain regions, and an interlayer dielectric (ILD) layer deposited on top of the ESL, covering the entire structure. These layers act as temporary guides and barriers.\n\nThe process then involves two distinct phases of creating openings and implanting impurities:\n1.  **First Opening and Impurity Region:** A precise opening is made *partially* into the ILD layer, carefully avoiding exposure of the underlying ESL. Through this opening, a 'first impurity ion' is implanted, which uniquely forms a temporary 'impurity region' *within* the ILD layer itself. This region serves as a highly accurate marker.\n2.  **Self-Aligned Second Opening and Final Implant:** Next, this temporary 'impurity region' within the ILD is selectively removed. Because it was perfectly placed, its removal creates a perfectly aligned 'second opening' that precisely exposes the ESL directly above the target source/drain areas. A 'second impurity ion' (the main dopant) is then implanted into this exposed ESL, which is finally removed. This two-step, self-aligned approach ensures that the dopants are placed with unparalleled accuracy, minimizing spreading and misplacement, which are common issues in conventional methods.","question":"How does Method of Manufacturing a Semiconductor Device work?"},{"answer":"The Method of Manufacturing a Semiconductor Device (US-9853111) primarily solves the critical problem of achieving precise and consistent impurity implantation (doping) in advanced semiconductor devices, particularly as transistor features continue to shrink to nanoscale dimensions. In modern chips, especially those utilizing FinFET architectures, the active regions are incredibly small.\n\nTraditional doping techniques often struggle with several issues at these scales:\n*   **Lateral Diffusion:** Dopants can spread horizontally beyond their intended areas, encroaching into the transistor's channel region. This leads to 'short-channel effects,' which degrade device performance, increase power leakage, and make transistors less reliable.\n*   **Non-Uniformity:** It's difficult to achieve a perfectly uniform distribution of dopants across a wafer, leading to variations in electrical characteristics between different transistors and chips. This variability can significantly reduce manufacturing yields.\n*   **Damage and Control:** High-energy ion implantation can damage the crystal lattice, requiring complex annealing steps. Moreover, controlling the exact depth and concentration of dopants becomes exceedingly challenging.\n\nThis patent provides a solution by introducing a self-aligned, multi-layered process that ensures dopants are placed with atomic-level precision. By mitigating these issues, the Method of Manufacturing a Semiconductor Device enables the fabrication of higher-performance, more energy-efficient, and more reliable microchips, crucial for the continued advancement of computing technology.","question":"What problem does Method of Manufacturing a Semiconductor Device solve?"},{"answer":"The patent for Method of Manufacturing a Semiconductor Device (US-9853111) lists inventors, but the provided data does not include their names. The assignee is also not provided in the input data. Typically, such innovations are the result of extensive research and development efforts by teams of engineers and scientists within major semiconductor manufacturing companies or research institutions.\n\nThese teams often comprise experts in materials science, electrical engineering, physics, and process technology. Their collective expertise is essential for developing complex fabrication methods that can operate at the atomic and molecular levels, as described in this patent.\n\nWhile the specific individuals are not listed in the provided information, the innovation itself reflects the ongoing collaborative efforts within the semiconductor industry to push the boundaries of what's possible in chip design and manufacturing. Such patents are often owned by large corporations that invest heavily in R&D to maintain their competitive edge in the global technology market.","question":"Who invented Method of Manufacturing a Semiconductor Device?"},{"answer":"The Method of Manufacturing a Semiconductor Device offers several significant benefits that are crucial for the advancement of semiconductor technology and the broader electronics industry:\n\n1.  **Enhanced Precision in Doping:** The primary benefit is unparalleled accuracy in placing dopant impurities. This self-aligned, multi-step process ensures that dopants are confined to their intended regions, preventing unwanted diffusion and encroachment into the transistor channel. This precision is vital for nanoscale devices.\n2.  **Improved Device Performance:** With precise doping, transistors exhibit superior electrical characteristics. This includes lower leakage currents (meaning less wasted power), higher drive currents (meaning faster switching speeds), and more consistent threshold voltages. These improvements translate directly into faster, more energy-efficient, and more reliable microchips for end-users.\n3.  **Higher Manufacturing Yields:** By reducing variability and defects caused by imprecise doping, the invention significantly increases the number of functional chips produced from each silicon wafer. Higher yields lead to lower manufacturing costs per chip, which can result in more competitive product pricing and increased profitability for manufacturers.\n4.  **Scalability to Advanced Technology Nodes:** This method provides a robust solution for fabricating chips at the most advanced technology nodes (e.g., 7nm, 5nm, 3nm, and beyond). It addresses a fundamental bottleneck in scaling, allowing for continued miniaturization and performance improvements, which is essential for the future of AI, IoT, and high-performance computing.\n5.  **Reduced Short-Channel Effects:** The precise control over doping profiles helps mitigate detrimental short-channel effects, which become increasingly problematic as transistor gate lengths shrink. This ensures better control over the transistor's operation and improves its overall stability.","question":"What are the key benefits of Method of Manufacturing a Semiconductor Device?"},{"answer":"The Method of Manufacturing a Semiconductor Device (US-9853111) differentiates itself from prior art doping techniques through its innovative, multi-layered, and self-aligned approach to impurity implantation. Traditional methods, such as broad-beam ion implantation, often face limitations that this patent specifically overcomes.\n\nPrior art methods typically involve implanting dopants directly through a patterned hard mask. While effective for larger features, this can lead to issues at nanoscale:\n*   **Lateral Dopant Spread:** Ions can scatter laterally under the mask, causing dopants to spread beyond the desired region and into the transistor channel, leading to performance degradation.\n*   **Alignment Challenges:** As features shrink, aligning the hard mask perfectly becomes extremely difficult, leading to misalignment errors and variability.\n*   **Channeling:** Ions can penetrate deeper than intended, creating undesirable doping profiles.\n\nIn contrast, the Method of Manufacturing a Semiconductor Device introduces a unique two-stage approach:\n1.  **Internal Impurity Region Formation:** Instead of directly implanting the main dopant, it first creates a temporary 'impurity region' *within* an interlayer dielectric (ILD) layer. This is a key distinction, as this region then acts as a highly precise, self-aligned template.\n2.  **Self-Aligned Etching:** The crucial step involves *selectively removing* this internal impurity region. This removal process automatically creates a perfectly aligned opening that exposes the underlying etch stop layer directly above the target area for the final dopant. This eliminates the need for a separate, error-prone lithography step for the final doping window.\n\nBy leveraging this self-aligned removal and a protected etch stop layer, the invention achieves superior spatial control, significantly reduces lateral dopant diffusion, and minimizes alignment-related defects, making it a more precise and scalable solution for advanced semiconductor manufacturing than conventional techniques.","question":"How is Method of Manufacturing a Semiconductor Device different from prior art?"},{"answer":"The Method of Manufacturing a Semiconductor Device (US-9853111) will have a profound impact across virtually all industries that rely on advanced electronics and high-performance computing. As a foundational technology for chip fabrication, its influence will be widespread:\n\n1.  **Consumer Electronics:** Smartphones, laptops, tablets, wearables, and smart home devices will benefit from more powerful, energy-efficient, and reliable processors and memory, leading to longer battery life, faster operation, and enhanced capabilities.\n2.  **Artificial Intelligence (AI) and Machine Learning:** AI accelerators and specialized processors for machine learning models demand immense computational power and efficiency. This innovation will enable the creation of more capable AI chips, driving advancements in everything from natural language processing to computer vision.\n3.  **High-Performance Computing (HPC) and Cloud Computing:** Data centers and supercomputers require the most advanced chips to handle massive workloads. Improved chip performance and yields, facilitated by this patent, will enhance the efficiency and scalability of cloud services and scientific research.\n4.  **Automotive:** Autonomous vehicles, advanced driver-assistance systems (ADAS), and in-car infotainment systems rely on highly reliable and powerful embedded processors. The precision offered by this technology is critical for safety-critical applications and sophisticated automotive AI.\n5.  **Telecommunications (5G/6G):** The infrastructure for 5G and future 6G networks, including base stations and edge devices, requires high-performance, low-power chips. This patent helps in producing the advanced silicon needed to support ultra-fast, low-latency communication.\n6.  **IoT and Edge Computing:** The proliferation of IoT devices demands tiny, energy-efficient, and robust chips. This manufacturing method contributes to creating such chips, enabling smarter and more pervasive connected environments.\n\nIn essence, any industry driven by digital technology will directly or indirectly benefit from the improved chip performance and manufacturing efficiency enabled by the Method of Manufacturing a Semiconductor Device.","question":"What industries will Method of Manufacturing a Semiconductor Device impact?"},{"answer":"The Method of Manufacturing a Semiconductor Device, identified by patent number US-9853111, was filed on **June 6, 2016**. The patent was subsequently published on **December 26, 2017**.\n\nThese dates are significant in the lifecycle of an intellectual property. The filing date establishes the priority date for the invention, meaning that this is the earliest date at which the innovation was formally documented with a patent office. This date is crucial for determining novelty against prior art.\n\nThe publication date indicates when the patent application became publicly accessible. While the patent may not have been officially granted (issued) by this date, the public can review its details and understand the scope of the invention. The publication of patents is a vital mechanism for disseminating technical information and fostering further innovation within the industry.\n\nFor researchers, competitors, and potential licensees, understanding these dates provides context for when the technology emerged and how it relates to other developments in semiconductor manufacturing processes. It also marks the point at which the innovative Method of Manufacturing a Semiconductor Device became part of the public technical record, available for study and analysis.","question":"When was Method of Manufacturing a Semiconductor Device filed/granted?"},{"answer":"The commercial applications of the Method of Manufacturing a Semiconductor Device (US-9853111) are vast and directly tied to the production of high-performance, energy-efficient, and reliable microchips for virtually every electronic device. This patent enables significant advancements in core semiconductor manufacturing processes, leading to a wide array of commercial benefits:\n\n1.  **Advanced Microprocessors and CPUs:** The method facilitates the production of faster and more efficient central processing units for computers, servers, and data centers. This directly impacts the performance of cloud services, enterprise computing, and personal devices.\n2.  **High-Density Memory Chips:** For both DRAM (Dynamic Random-Access Memory) and NAND flash memory, precise doping is essential for increasing storage density and improving access speeds. This technology supports the development of next-generation memory solutions critical for data storage and processing.\n3.  **AI and Machine Learning Accelerators:** Specialized chips designed for artificial intelligence and machine learning require extremely high computational throughput and low power consumption. The precision offered by this patent allows for the creation of more powerful and efficient AI accelerators, driving advancements in AI applications.\n4.  **System-on-Chip (SoC) Devices:** SoCs, which integrate multiple components onto a single chip, are ubiquitous in mobile devices, IoT, and automotive electronics. The improved precision ensures that all integrated components perform optimally, leading to more reliable and feature-rich products.\n5.  **Power Management Integrated Circuits (PMICs):** While typically not leading-edge logic, PMICs benefit from precise doping to achieve optimal power efficiency and regulation, extending battery life in portable electronics.\n6.  **Specialized Application-Specific Integrated Circuits (ASICs):** For custom chips designed for specific tasks (e.g., cryptocurrency mining, industrial control), the ability to precisely tailor doping profiles can yield significant performance and efficiency advantages.\n\nUltimately, any product requiring advanced semiconductor components stands to benefit from the enhanced manufacturing capabilities provided by the Method of Manufacturing a Semiconductor Device, leading to superior consumer and industrial electronics.","question":"What are the commercial applications of Method of Manufacturing a Semiconductor Device?"},{"answer":"The Method of Manufacturing a Semiconductor Device (US-9853111) lays a robust foundation for future developments in semiconductor manufacturing, particularly as the industry moves towards even smaller and more complex transistor architectures. Several key areas are likely to see continued evolution based on the principles of this patent:\n\n1.  **Integration with Gate-All-Around (GAA) FETs:** As FinFETs reach their scaling limits, GAAFETs are emerging as the next generation of transistors. The self-aligned, precision doping techniques described in this patent are highly adaptable and crucial for fabricating the nanowire or nanosheet channels of GAAFETs, where precise doping of surrounding source/drain regions is even more critical.\n2.  **Novel Materials and Etch Chemistries:** Future developments may explore new materials for the etch stop layer and interlayer dielectric that offer even higher etch selectivities and better performance characteristics. Additionally, new etch chemistries and advanced plasma processes could be developed to refine the selective removal of the 'impurity region' within the ILD, enhancing precision further.\n3.  **Atomic-Level Doping Control:** Research will likely focus on achieving even finer control over dopant placement, potentially enabling single-atom doping or ultra-sharp junction profiles. This could involve integrating the method with advanced techniques like atomic layer deposition (ALD) or molecular beam epitaxy (MBE) for dopant delivery.\n4.  **3D Integration and Chiplets:** As the industry moves towards heterogeneous integration and 3D stacking of chiplets, precise doping will be essential for creating high-density vertical interconnects (e.g., through-silicon vias - TSVs) and for finely tuning the electrical properties of different layers in a 3D stack. This patent's principles could be extended to these complex 3D structures.\n5.  **AI-Driven Process Optimization:** Leveraging artificial intelligence and machine learning to optimize the various parameters (implant dose, energy, etch times, gas flows) within the Method of Manufacturing a Semiconductor Device will lead to even greater process control, higher yields, and faster development cycles.\n\nThese anticipated developments underscore the foundational importance of the Method of Manufacturing a Semiconductor Device in shaping the future trajectory of microchip technology and enabling the next wave of digital innovation.","question":"What are the future developments expected for Method of Manufacturing a Semiconductor Device?"}],"topics":["semiconductor manufacturing","impurity implantation","FinFET","doping process","etch stop layer","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Method of Manufacturing a Semiconductor Device - Patent US-9853111","description":"Discover a groundbreaking Method of Manufacturing a Semiconductor Device for precision impurity implantation, enabling faster chips and higher yields. Full technical analysis of US-9853111.","keywords":["semiconductor manufacturing","impurity implantation","FinFET","doping process","etch stop layer","interlayer dielectric","semiconductor device","chip fabrication","patent US-9853111","advanced transistor","precision doping","yield enhancement"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853111","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853111","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device\" (US-9853111). https://patentable.app/patents/US-9853111","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853111","json":"https://patentable.app/api/llm-context/US-9853111","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:07:00.031Z"}